JPH05299798A - Electronic circuit wiring board - Google Patents
Electronic circuit wiring boardInfo
- Publication number
- JPH05299798A JPH05299798A JP6159291A JP6159291A JPH05299798A JP H05299798 A JPH05299798 A JP H05299798A JP 6159291 A JP6159291 A JP 6159291A JP 6159291 A JP6159291 A JP 6159291A JP H05299798 A JPH05299798 A JP H05299798A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- electronic circuit
- conductor
- vacuum deposition
- circuit wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 7
- 239000011156 metal matrix composite Substances 0.000 claims description 6
- 239000004020 conductor Substances 0.000 abstract description 11
- 238000005530 etching Methods 0.000 abstract description 6
- 238000009413 insulation Methods 0.000 abstract description 6
- 238000001771 vacuum deposition Methods 0.000 abstract description 4
- 239000011159 matrix material Substances 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract description 2
- 230000003685 thermal hair damage Effects 0.000 abstract description 2
- 229910052725 zinc Inorganic materials 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000002905 metal composite material Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000012774 insulation material Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 239000012779 reinforcing material Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000883 Ti6Al4V Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Laminated Bodies (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は電子回路配線板に関す
る。FIELD OF THE INVENTION The present invention relates to electronic circuit wiring boards.
【０００２】[0002]
【従来の技術】従来の電子回路配線板の基板にはポリイ
ミド系、金属系の材料が使用されている。2. Description of the Related Art Polyimide-based and metal-based materials are used for substrates of conventional electronic circuit wiring boards.
【０００３】[0003]
【発明が解決しようとする課題】従来の電子回路配線板
の基板には下記の問題点がある。 （１）ポリイミド系基板 （ｉ）吸湿により基板が変形する。 （ii）放熱性（熱伝導率）が低いことによりＩＣチップ
等が熱破損する。The substrate of the conventional electronic circuit wiring board has the following problems. (1) Polyimide substrate (i) The substrate is deformed by moisture absorption. (Ii) IC chips and the like are thermally damaged due to low heat dissipation (heat conductivity).
【０００４】（２）金属系基板 （ｉ）蒸着・エッチング等による回路形成時、基板に熱
サイクルが負荷される。そのため、基板と回路形成層と
の線膨張係数の差が回路形成層にクラック等の悪影響を
及ぼし、回路品質（絶縁抵抗）の低下をひき起こす。(2) Metal-based substrate (i) When a circuit is formed by vapor deposition, etching, etc., a thermal cycle is applied to the substrate. Therefore, the difference in the linear expansion coefficient between the substrate and the circuit forming layer adversely affects the circuit forming layer such as cracks, and causes deterioration of circuit quality (insulation resistance).
【０００５】参考として、これまでに使用されている基
板材料、導電材料及び絶縁材料の物性値を下記表１に示
す。For reference, the physical properties of the substrate material, conductive material and insulating material used so far are shown in Table 1 below.
【表１】 [Table 1]
【０００６】本発明は上記技術水準に鑑み、従来の基板
におけるような不具合のない電子回路配線板を提供しよ
うとするものである。In view of the above-mentioned state of the art, the present invention is to provide an electronic circuit wiring board which does not have the problems of the conventional boards.
【０００７】[0007]
【課題を解決するための手段】本発明は基板として金属
基複合材料を使用してなることを特徴とする電子回路配
線板である。The present invention is an electronic circuit wiring board characterized by using a metal matrix composite material as a substrate.
【０００８】本発明で使用する金属基複合材料（ Metal
Matrix Composition ；以下、ＭＭＣと略称する）とし
ては下記の表２のようなものが使用できる。The metal matrix composite material (Metal
As Matrix Composition (hereinafter, abbreviated as MMC), the ones shown in Table 2 below can be used.
【表２】 ＊ Ｖf ：強化材の体積分率 ＊＊ Ａｌ合金：純Ａｌ、７千番系、６千番系、５千番
系、２千番系Ａｌ合金[Table 2] * Vf : Volume fraction of reinforcing material ** Al alloy: Pure Al, 7,000 series, 6,000 series, 5,000 series, 2,000 series Al alloy
【０００９】[0009]
【作用】本発明はＭＭＣを基板材料として使用すること
で下記の点を改善し、電子回路配線板の品質を向上させ
る。The present invention improves the quality of electronic circuit wiring boards by improving the following points by using MMC as a substrate material.
【００１０】（１）ＭＭＣの強化材及びＶf の選択によ
り、絶縁層の線膨張係数に近い線膨張係数が得られ、絶
縁抵抗の低下を阻止できる。(1) A linear expansion coefficient close to the linear expansion coefficient of the insulating layer can be obtained by selecting the reinforcing material of the MMC and V f , and a decrease in insulation resistance can be prevented.
【００１１】（２）ベースが金属であるため、高い放熱
性（熱伝導率）が得られる。そのため、回路作動中に発
生する熱を放出でき、ＩＣチップ等の熱破損を減少させ
ることができ、電子回路配線板の小型軽量化に有効であ
る高密度実装を実現できる。(2) Since the base is made of metal, high heat dissipation (heat conductivity) can be obtained. Therefore, heat generated during circuit operation can be released, heat damage to the IC chip and the like can be reduced, and high-density mounting that is effective in reducing the size and weight of the electronic circuit wiring board can be realized.
【００１２】（３）基板の比強度等が高いため、電子回
路配線板を構造材の中に取り込むことができ、電子部品
・製品の小型化が可能となる。(3) Since the specific strength of the substrate is high, the electronic circuit wiring board can be incorporated into the structural material, and the electronic components and products can be downsized.
【００１３】[0013]
【実施例】基板に板厚１．７mmのＳｉＣウイスカ／Ａｌ
板（Ｖf ：２５％）を使用し、図１に示すように、その
上に絶縁層として層厚１０μｍのＳｉＯ2 を真空蒸着に
よって形成した。なおマトリックスのＡｌとしてはＪＩ
Ｓ ７０７５Ａｌ＋２％Ｚｎ（重量％で、Ｓｉ：０．４
以下、Ｆｅ：０．５以下、Ｃｕ：１．２〜２、Ｍｎ：
０．３以下、Ｍｇ：２．１〜２．９、Ｃｒ：０．１８〜
０．２８、Ｚｎ：７．１〜８．１、Ｔｉ＋Ｚｎ：０．２
５以下、Ｔｉ：０．２以下、その他元素合計０．１５以
下、残部Ａｌの組成のものである。[Example] SiC whiskers / Al having a thickness of 1.7 mm on a substrate
Using a plate (V f : 25%), SiO 2 having a layer thickness of 10 μm was formed thereon as an insulating layer by vacuum deposition, as shown in FIG. As the matrix Al, JI
S 7075 Al + 2% Zn (wt%, Si: 0.4
Hereinafter, Fe: 0.5 or less, Cu: 1.2 to 2, Mn:
0.3 or less, Mg: 2.1 to 2.9, Cr: 0.18 to
0.28, Zn: 7.1 to 8.1, Ti + Zn: 0.2
5 or less, Ti: 0.2 or less, the total of other elements 0.15 or less, and the balance Al.
【００１４】次に、図２に示すように、一層目の導体層
として層厚１０μｍのＣｕを真空蒸着によって絶縁層上
に形成し、エッチングすることで回路を形成した。Next, as shown in FIG. 2, a 10 μm-thick Cu layer was formed as a first conductor layer on the insulating layer by vacuum vapor deposition and was etched to form a circuit.
【００１５】更に、図３に示すように、その上に層厚１
０μｍの絶縁層（ＳｉＯ2 ）を真空蒸着によって形成
し、エッチングによりバイアホールを形成した。Further, as shown in FIG.
An insulating layer (SiO 2 ) having a thickness of 0 μm was formed by vacuum evaporation, and a via hole was formed by etching.
【００１６】更に、又、図４に示すようにその上に層厚
１０μｍの導体層（Ｃｕ）を真空蒸着によって形成し、
エッチングすることで回路を形成した。Further, as shown in FIG. 4, a conductor layer (Cu) having a layer thickness of 10 μm is formed thereon by vacuum vapor deposition,
A circuit was formed by etching.
【００１７】これらの作業を繰返し、図５に示すよう
に、導体四層の回路を形成した。These operations were repeated to form a conductor four-layer circuit as shown in FIG.
【００１８】こゝでは絶縁層にＳｉＯ2 、導体層にＣｕ
を使用したが、絶縁層にＡｌ2 Ｏ3等、導体層にＡｌ等
も使用可能なことが解かっている。又、こゝでは導体四
層であるが、何層でも多層化が図れることも解明かって
いる。In this case, SiO 2 is used for the insulating layer and Cu is used for the conductor layer.
However, it has been found that Al 2 O 3 or the like can be used for the insulating layer and Al or the like for the conductor layer. In addition, although it has four conductor layers in this case, it has been clarified that any number of layers can be formed.
【００１９】なお、この実施例によって使用したＳｉＣ
ウイスカ／Ａｌ板の熱伝導率は０．４２ cal／cm・sec
・℃、線膨張率は１１×１０-6／Ｋ、密度２．８ｇ／cm
3 、電気抵抗は３．５×１０-6Ωcm（いずれも室温）で
あった。このものゝ比強度（強度／密度）は３９kmで、
Ｔｉ（Ｔｉ−６Ａｌ−４Ｖ）、Ａｌ（７０７５）の比強
度が２１km、２０kmであるのに対すると著しく優れてい
るものである。The SiC used in this example
Thermal conductivity of whisker / Al plate is 0.42 cal / cm · sec
-° C, coefficient of linear expansion 11 × 10 -6 / K, density 2.8 g / cm
3. The electric resistance was 3.5 × 10 −6 Ωcm (both at room temperature). This one's specific strength (strength / density) is 39km,
The specific strengths of Ti (Ti-6Al-4V) and Al (7075) are 21 km and 20 km, which are remarkably excellent.
【００２０】上記実施例におけるＳｉＯ2 及びＣｕの蒸
着条件は下記の表３の通りである。The deposition conditions of SiO 2 and Cu in the above embodiment are shown in Table 3 below.
【表３】 [Table 3]
【００２１】[0021]
【発明の効果】従来のポリイミド及び金属基板と比較す
ると以下のような効果があった。 （１）絶縁層との線膨張係数の差が減少し、絶縁抵抗の
低下を阻止できた。 （２）高い放熱性（熱伝導率）が得られ、ＩＣ等のエッ
チング部品の熱破損を減少させることで高密度実装によ
る小型・軽量化が図れた。 （３）高い比強度が得られ、構造材とのハイブリッド化
が可能となった。The following effects are obtained when compared with the conventional polyimide and metal substrates. (1) The difference in the coefficient of linear expansion from that of the insulating layer was reduced, and a decrease in insulation resistance could be prevented. (2) High heat dissipation (heat conductivity) is obtained, and thermal damage to etching parts such as ICs is reduced, resulting in high-density mounting, resulting in reduction in size and weight. (3) A high specific strength was obtained and it became possible to hybridize with a structural material.
【図面の簡単な説明】[Brief description of drawings]
【図１】本発明の一実施例における基板上にＳｉＯ2 を
蒸着した状況の断面図。FIG. 1 is a cross-sectional view of a state in which SiO 2 is deposited on a substrate according to an embodiment of the present invention.
【図２】図１の上にＣｕを蒸着後エッチングし、回路形
成を行った状況の断面図。FIG. 2 is a cross-sectional view of a state in which Cu is vapor-deposited and then etched on the top of FIG. 1 to form a circuit.
【図３】図２の上にＳｉＯ2 を蒸着後、エッチングしバ
イアホール形成を行った状況の断面図。FIG. 3 is a cross-sectional view of a state in which SiO 2 is vapor-deposited on FIG. 2 and is then etched to form a via hole.
【図４】図３の上にＣｕを蒸着後エッチングし回路形成
を行った状況の断面図。FIG. 4 is a cross-sectional view showing a state where a circuit is formed by etching Cu after vapor deposition on FIG.
【図５】作業を繰返して形成した導体四層の電子回路配
線板の断面図。FIG. 5 is a cross-sectional view of a conductor four-layer electronic circuit wiring board formed by repeating work.
Claims (1)
ることを特徴とする電子回路配線板。1. An electronic circuit wiring board comprising a metal matrix composite material as a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6159291A JPH05299798A (en) | 1991-03-26 | 1991-03-26 | Electronic circuit wiring board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6159291A JPH05299798A (en) | 1991-03-26 | 1991-03-26 | Electronic circuit wiring board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05299798A true JPH05299798A (en) | 1993-11-12 |
Family
ID=13175575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6159291A Withdrawn JPH05299798A (en) | 1991-03-26 | 1991-03-26 | Electronic circuit wiring board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05299798A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103298248A (en) * | 2012-02-29 | 2013-09-11 | 深圳光启创新技术有限公司 | Base board and preparation method thereof |
-
1991
- 1991-03-26 JP JP6159291A patent/JPH05299798A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103298248A (en) * | 2012-02-29 | 2013-09-11 | 深圳光启创新技术有限公司 | Base board and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0220508B1 (en) | A multi-layer circuit board having a large heat dissipation | |
| JPH07202063A (en) | Ceramic circuit board | |
| JPS60173900A (en) | Ceramic circuit board | |
| JPH0786703A (en) | Ceramic circuit board | |
| JPH0957487A (en) | Brazing material | |
| US6013357A (en) | Power module circuit board and a process for the manufacture thereof | |
| JPS6126231A (en) | Metal-ceramic composite element and method of producing same | |
| JPH05299798A (en) | Electronic circuit wiring board | |
| JP4557398B2 (en) | Electronic element | |
| JPH08102570A (en) | Ceramic circuit board | |
| JP2861357B2 (en) | Aluminum nitride-copper bonding method | |
| JP3537320B2 (en) | Circuit board | |
| JP2503775B2 (en) | Substrate for semiconductor device | |
| JP3015491B2 (en) | AlN substrate | |
| JP3383892B2 (en) | Method for manufacturing semiconductor mounting structure | |
| JPH0518477B2 (en) | ||
| JP2679375B2 (en) | IC mounting substrate | |
| JP2001135753A (en) | Semiconductor module substrate and manufacturing method for the same | |
| JP2607699Y2 (en) | Lightweight substrates for semiconductor devices | |
| JPH0529507A (en) | Board for semiconductor | |
| JP3219545B2 (en) | Method for manufacturing aluminum oxide substrate having copper circuit | |
| JPH0529509A (en) | Board for semiconductor | |
| JPS59184586A (en) | Circuit board for mounting semiconductor elements | |
| JPH10223809A (en) | Power module | |
| JP3029702B2 (en) | AlN substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19980514 |