JPH0529455A - Manufacturing method of semiconductor device - Google Patents

Abstract

PURPOSE:To avoid the wafer cracking during the handling steps of thin wafer from the polishing step of semiconductor wafer to the electrical characteristics checking step and the dicing step in consideration of the diminished thickness of semiconductor wafer in the polishing step resultant from the miniaturization of packaged semiconductor wafer. CONSTITUTION:After sticking a surface protective sheet 2 on a semiconductor wafer 1, a rear surface sheet 3 is sticked on the rear surface of the same. Next, the surface protective sheet 2 is released to be handled leaving such a state intact from the electrical characteristics checking step to the dicing step. Through these procedures, the thin semiconductor wafer can be reinforced by the rear surface sheet 3 while eliminating the handling step of the unit wafer itself for avoiding the wafer cracking phenomenon thereby enabling the yield in the manufacturing steps to be increased.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a back grinding process to a dicing process.

[0002]

2. Description of the Related Art A conventional manufacturing method is shown in FIG.
This will be described with reference to (e).

First, as shown in FIG. 2A, a surface protection sheet 2 is attached to the surface of a semiconductor wafer 1 and the surface protection sheet 2 is cut into the same shape as the semiconductor wafer 1.

Next, as shown in FIG. 2B, the back surface of the semiconductor wafer 1 is ground by a grinder to a predetermined thickness.

Next, as shown in FIG. 2C, the surface protection sheet 2 is peeled off to leave only the semiconductor wafer 1. In this state, the electrical characteristics of each chip are checked to determine whether they are good or bad.

Next, as shown in FIG. 2D, the back sheet 3 is attached to the back surface of the semiconductor wafer 1, and at the same time, the outer peripheral portion of the back sheet 3 is attached to the frame 4.

Next, as shown in FIG. 2E, the semiconductor wafer 1 is divided into individual chips 5 by a dicing device. In this state, it is sent to the die bonding step of the next step.

[0008]

With the miniaturization of the mounting package, the ground finish thickness of the semiconductor wafer is also 35.
It is as thin as 0 μm or 300 μm. In addition, the outer diameter of semiconductor wafers has been increased to φ6 inches and φ8 inches.

In the conventional method, since the surface protective sheet is removed after grinding and the semiconductor wafer is handled as a single body, the semiconductor wafer is often cracked at the time of handling, and there is a problem that the manufacturing yield of semiconductor integrated circuits is reduced.

[0010]

According to a method of manufacturing a semiconductor device of the present invention, a backside sheet is attached to a backside of a semiconductor wafer while leaving a surface protection sheet of the semiconductor wafer after grinding, and at the same time, an outer peripheral portion of the backside sheet is attached to the backside sheet. After the frame is attached, the surface protection sheet of the semiconductor wafer is peeled off to check the electrical characteristics and handle the dicing process.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to FIGS.
This will be described with reference to (e).

First, as shown in FIG. 1A, a surface protective sheet 2 is attached to the surface of a semiconductor wafer 1 and the surface protective sheet 2 is cut into the same shape as the semiconductor wafer 1.

Next, as shown in FIG. 1 (b), the back surface of the semiconductor wafer 1 is ground by a grinder to a predetermined thickness.

Next, as shown in FIG. 1C, a back sheet 3 for dicing is attached to the back surface of the semiconductor wafer 1 to which the surface protection sheet 2 is attached. Back sheet 3 at the same time
The frame 4 is attached to the outer peripheral portion of.

Next, as shown in FIG. 1 (d), the surface protection sheet 2 is peeled off. In this state, the electrical characteristics of individual chips in the semiconductor wafer 1 are checked.

Next, as shown in FIG. 1E, the individual chips 5 are cut by a dicing device and sent to a die bonding step which is the next step.

[0017]

EFFECTS OF THE INVENTION A backside sheet for dicing is attached to the backside of a semiconductor wafer after backside grinding with the surface protection sheet left. After that, the surface protection sheet is peeled off and the electrical characteristics are measured.

Handling of the semiconductor wafer alone is eliminated, and cracking of the semiconductor wafer due to handling during peeling of the surface protective sheet or in the process of measuring electrical characteristics is eliminated, which has the effect of improving the yield in the manufacturing process. Also,
Even with a large diameter of φ8 inch, it is possible to manufacture a semiconductor wafer having a thickness of about 250 μm.

[Brief description of drawings]

FIG. 1 is a sectional view showing an embodiment of the present invention in the order of steps.

FIG. 2 is a cross-sectional view showing a conventional back surface grinding / measurement / dicing process.

[Explanation of symbols]

 1 semiconductor wafer 2 surface protection sheet 3 back sheet 4 frame 5 chips

Claims (1)

Claim: What is claimed is: 1. A step of adhering a surface protection sheet to the front surface of a semiconductor wafer and grinding the back surface of the semiconductor wafer,
A step of attaching a backside sheet to the backside of the semiconductor wafer and a frame at the same time on the outer periphery of the backside sheet, a step of peeling off the surface protection sheet to measure the electrical characteristics of the semiconductor wafer, and the semiconductor wafer into individual chips. And a dicing step of dividing into