JPH05268522A - Solid-state image pickup device - Google Patents

Abstract

PURPOSE:To provide the solid-state image pickup device able to vary vertical resolution (MTF) without losing a dynamic resolution. CONSTITUTION:A control section 7 controls a CCD drive circuit 6 driving a CCD image sensor 2 of an image pickup section 3 and a valid charge storage period of each photoelectric conversion element of the CCD image sensor 2 is changed depending on photoelectric conversion elements on an odd number column and photoelectric conversion elements of an even number column independently and a pickup charge obtained by the photoelectric conversion elements on the odd number column and the photoelectric conversion elements of the even number column adjacent to each other is added and mixed by each field and the result is read.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device for picking up an image of a subject by a solid-state image sensor in which photoelectric conversion elements are arranged in a matrix, and for example, NTSC (National Television System) in which interlaced scanning is performed.
stem Commitee) and other standard television system television camera devices.

[0002]

2. Description of the Related Art In a standard television system such as the NTSC system, interlaced scanning is adopted in which scanning lines of odd fields and scanning lines of even fields are positioned between the scanning lines.

In a solid-state image pickup device for picking up a subject by a solid-state image sensor such as a CCD (Charge Coupled Device) image sensor in which photoelectric conversion elements are arranged in a matrix, an operation mode called frame reading or frame reading is performed. By operating the solid-state image sensor in a so-called operation mode, an imaging output corresponding to interlaced scanning is obtained.

For example, an interline transfer type C
In the CD image sensor, in the case of the field read mode operation, as shown in FIG. 5, by the read pulse for each vertical blanking period, the image pickup charges A _i by the photoelectric conversion elements of the adjacent odd columns and the photoelectric conversion elements of the even columns are used. The image pickup charges B _i are transferred to the vertical transfer registers by changing the upper and lower combinations for each field, and the image pickup charges A _i + B _i , B _i + A _{i + 1} of each field are horizontally transferred from the vertical transfer register during the video period. The image output corresponding to the interlaced scanning is obtained by reading out line-sequentially via the register. Further, in the case of the operation in the frame read mode, as shown in FIG. 6, the image pickup charge A _i by the photoelectric conversion elements in the adjacent odd columns and the image pickup charge B by the photoelectric conversion elements in the adjacent odd columns are generated by the read pulse for each vertical blanking period.
_i is alternately transferred to the vertical transfer register for each field, and the image-capturing charges A _i and B _i of each field are read line-sequentially from the vertical transfer register through the horizontal transfer register during the video period to perform interlaced scanning. The imaging output corresponding to is obtained.

[0005]

By the way, in a solid-state image pickup device in which a solid-state image sensor is operated in a field read mode to obtain an image pickup output corresponding to interlaced scanning, an image pickup charge by adjacent photoelectric conversion elements in odd columns is used. Image charge B by A _i and photoelectric conversion elements in even columns
By changing the upper and lower combinations of _i for each field and performing additive mixing, the imaging charges A _i + of each field
Since B _i and B _i + A _{i + 1} are obtained, the vertical resolution (MT
F) will decrease.

Further, in the solid-state image pickup device in which the solid-state image sensor is operated in the frame reading mode to obtain the image pickup output corresponding to the interlaced scanning, the image pickup charges A _i and the even number columns of the photoelectric conversion elements of the adjacent odd columns are arranged. By alternately reading the image-capturing charges B _i by the photoelectric conversion element for each field, the image-capturing charges A _i + of each field are read.
Since B _i and B _i + A _{i + 1} are obtained, the vertical resolution (MTF) is improved as compared with the case of the field reading mode, but afterimages increase and the dynamic range becomes 1/2. There was a problem. Further, in the frame reading mode, there is a problem that flicker due to interlaced scanning is noticeable.

In view of the problems of the conventional solid-state image pickup device as described above, the present invention reduces the vertical resolution (MTF) lower than that in the field read mode and causes less afterimage than that in the frame read mode. Further, the present invention provides a solid-state imaging device capable of varying the vertical resolution (MTF) without deteriorating the dynamic resolution, with the object of obtaining an imaging output having a wide dynamic range. ..

[0008]

In order to solve the above-mentioned problems, a solid-state image sensor according to the present invention includes a solid-state image sensor having photoelectric conversion elements arranged in a matrix, and each of the solid-state image sensors. Imaging charges obtained by the photoelectric conversion elements in the odd-numbered columns and the photoelectric conversion elements in the even-numbered columns by independently changing the effective charge storage period of the photoelectric conversion elements in the odd-numbered columns and the even-numbered columns And an image sensor drive control means for performing control of addition and mixing for each field and reading.

Further, the solid-state image pickup device according to the present invention has an image pickup section having a vertical transfer register from which image pickup charges obtained by photoelectric conversion elements arranged in a matrix are read out, and an image is picked up from the vertical transfer register of the image pickup section. A solid-state image sensor including a storage unit having a vertical transfer register to which charges are transferred at high speed, and a horizontal transfer register unit to which imaging charges are transferred line-sequentially from the vertical transfer register of the storage unit, and an odd number of the solid-state image sensors. The imaging charges obtained by the photoelectric conversion elements in the columns and the imaging charges obtained by the photoelectric conversion elements in the even columns are alternately read into the vertical transfer register of the image pickup unit for each field in the middle of the video period, and the vertical charges for each field are read. During the blanking period, high-speed transfer from the vertical transfer register of the image pickup unit to the vertical transfer register of the storage unit Image pickup charges are transferred line-sequentially from the vertical transfer register through the horizontal transfer register at high speed to perform sweeping, and the image pickup charges obtained by the adjacent odd-numbered photoelectric conversion elements and even-numbered photoelectric conversion elements Are added and mixed in the vertical blanking period for each field, read out to the vertical transfer register of the image pickup section and transferred at high speed to the vertical transfer register of the storage section, and are transferred from the vertical transfer register of the storage section during the video period. Image sensor drive control means for controlling line-sequential reading of imaging charges via the horizontal transfer register is provided.

[0010]

In the solid-state image pickup device according to the present invention, the effective charge storage period of each photoelectric conversion element of the solid-state image sensor is independently controlled by the photoelectric conversion elements of odd columns and even columns by the image sensor drive control means. Instead, the image pickup charges obtained by the photoelectric conversion elements in the odd-numbered columns and the photoelectric conversion elements in the even-numbered columns which are adjacent to each other are added and mixed for each field and read out.

Further, in the solid-state image pickup device according to the present invention, the image sensor drive control means causes the image pickup charges obtained by the photoelectric conversion elements in the odd-numbered columns of the frame-interline-transfer type solid-state image sensor and the photoelectric conversion elements in the even-numbered columns. The obtained image pickup charges are alternately read into the vertical transfer register of the image pickup section for each field during the video period, and during the vertical blanking period for each field,
The vertical transfer register of the image pickup unit is transferred at high speed to the vertical transfer register of the storage unit, and the image pickup charge is line-sequentially transferred from the vertical transfer register of the storage unit through the horizontal transfer register at high speed to perform sweeping control. , The image pickup charges obtained by the photoelectric conversion elements in the odd-numbered columns and the photoelectric conversion elements in the even-numbered columns which are adjacent to each other are added and mixed during the vertical blanking period for each field, read out to the vertical transfer register of the image pickup section, and stored in the storage section The high-speed transfer to the vertical transfer register is performed, and during the video period, the image-capturing charges are line-sequentially read from the vertical transfer register of the storage section through the horizontal transfer register.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the solid-state image pickup device according to the present invention will be described below in detail with reference to the drawings. The solid-state imaging device according to the present invention is configured, for example, as shown in FIG.

The solid-state image pickup device shown in FIG.
CCD of the image pickup unit 3 in which _i is incident through the image pickup optical system 1.
(Charge Coupled Device) Image sensor 2 captures the three primary color images of the subject image, and the NTSC (National T
The present invention is applied to a color television camera device that outputs a color television signal conforming to the Elevation System Commitee system, and a signal processing unit 4 to which an image pickup signal is supplied from the image pickup unit 3 and the signal processing unit 4 An encoder 5 to which an image pickup signal subjected to signal processing is supplied, a CCD drive circuit 6 for driving the CCD image sensor 2, a control unit 7 for controlling the operation of these various circuit blocks, and the like.

In this solid-state image pickup device, the image pickup unit 3
As shown in FIG. 2, in the CCD image sensor 2 constituting the above, photoelectric conversion elements S _O and S _E such as photodiodes corresponding to respective pixels of an odd field image and an even field image are arranged in a matrix on the imaging surface. Of a so-called frame interline transfer (FIT) type having an image pickup section IM that has been captured and an accumulation section ST to which the accumulated charges obtained by each photoelectric conversion element S of the image pickup section IM are transferred via the vertical transfer register IMV _REG . A CCD image sensor, which is driven by the CCD driving circuit 6 and arranged in a matrix in the photoelectric conversion elements S _O ,
The imaging charge obtained by S _E is transferred from the vertical transfer register IMV _REG of the imaging unit IM to the vertical transfer register ST of the storage unit ST via the transfer gate SG for each vertical blanking.
₁ is transferred to the _REG through the vertical transfer register ST _REG horizontal transfer register H _REG of the storage unit ST during the video period.
The lines are read line by line.

The signal processing section 4 forms an image pickup signal obtained by subjecting the image pickup signal read from the CCD image sensor 2 to process processing such as gamma correction. Then, this image pickup signal is supplied to the encoder 5. Further, the encoder 5 forms a television signal conforming to the NTSC system from the image pickup signal supplied from the signal processing unit 4 and outputs the television signal from the output terminal 8.

Further, the CCD drive circuit 6 applies the image-capturing charges obtained by the photoelectric conversion elements S _O and S _E in the image-capturing section IM to the vertical transfer register IMV based on the timing signal given by the control section 7. Sensor gate pulses φSG ₁ and φSG ₂ to be transferred to _REG , a vertical transfer pulse vertical transfer pulse φIM to vertically transfer the signal charge in the vertical transfer register IMV _REG of the image pickup section IM,
Vertical transfer pulse vertical transfer pulse φ for vertically transferring the signal charge in the vertical transfer register STV _REG of the storage section ST
ST, a transfer pulse φVH for transferring signal charges from the vertical transfer register STV _REG of the storage unit ST to the horizontal transfer register H _REG , a horizontal transfer pulse φH for horizontally transferring signal charges in the horizontal transfer register H _REG , and the like. It is applied to the CCD image sensor 2.

Then, the control section 7 supplies a synchronizing signal, a blanking signal, etc. to the encoder 5 based on the system clock of the solid-state image pickup device, and various signals to the signal processing section 4 and the CCD drive circuit 6. It is designed to give timing signals. The control unit 7 operates in the first to third operation modes by a system controller (not shown).
The operation mode is switched to the three types of operation modes, and the following control operation is performed.

First, the first operation mode is the field read mode, and the control section 7 gives various timing signals in the field read mode to the CCD drive circuit 6.

In the first operation mode, the CC
The D drive circuit 6 simultaneously applies the sensor gate pulses φSG ₁ and φSG ₂ to the image pickup section IM during the vertical blanking period T _VBLK for each field, and the image pickup charge A obtained by the photoelectric conversion elements S _{O in} odd columns. _The vertical transfer register IM by alternately changing the upper and lower combinations of _i and the imaging charges B _i obtained by the photoelectric conversion elements S _{E in the} even columns for each field.
By transferring to V _REG , the imaging charges A _i + B corresponding to interline scanning in the field read mode
_i , B _i + A _{i + 1} are read to the vertical transfer register IMV _REG .

The sensor gate pulse φSG ₁ ,
Immediately before the timing of φSG ₂ , high-speed vertical transfer pulses φIM and φST are applied to the vertical transfer register I of the image pickup section IM.
MV _REG and the vertical transfer register STV of the storage unit ST
The vertical transfer register IM of the image pickup unit IM given to _REG
The unnecessary charges such as smear components in _REG is fast transferred to the vertical transfer registers STV _REG of the storage section ST. By this high-speed transfer operation, the vertical transfer register IMV _REG of the image pickup section IM becomes empty with unnecessary charges being swept out.

Then, the CCD drive circuit 6 gives sensor gate pulses φSG ₁ and φSG ₂ in a state where the vertical transfer register IMV _REG is emptied,
In the image pickup section IM, the image pickup charge A _i obtained by the odd-numbered photoelectric conversion elements S _O and the image pickup charge B _i obtained by the even-numbered photoelectric conversion elements S _E are alternately changed in the upper and lower portions for each field. The above vertical transfer register IMV
Transfer to _REG .

Further, the sensor gate pulse φS
Immediately after the timing of G ₁ and φSG ₂ , high-speed vertical transfer pulses φIM ₁ and φST are given to the vertical transfer register IMV _REG of the image pickup unit IM and the vertical transfer register STV _REG of the storage unit ST to cause the image pickup unit IM. The charges A _i + B _i and B _i + A _{i + 1} in the vertical transfer register IMV _REG are transferred to the vertical transfer register STV _REG of the storage unit ST at high speed.

Then, the signal charges A _i + B _i , B transferred at high speed to the vertical transfer register STV _REG of the storage section ST.
_i + A _{i + 1} is, during the subsequent read period (video period),
It is read line-sequentially via the horizontal transfer register H _REG .

As described above, in the first operation mode, the imaging charge A _i obtained by the odd-numbered photoelectric conversion elements S _O of the imaging section IM and the imaging charge B _i obtained by the even-numbered photoelectric conversion elements S _E are The upper and lower combinations are alternately changed for each field and transferred to the vertical transfer register IMV _REG, and the imaging charges A _i + B _i , B _i + A _{i + 1} of each field are transferred to the vertical transfer register of the storage section ST during the video period. STV _REG
The image output corresponding to the interlaced scanning is obtained in the field read mode by reading the data line by line through the horizontal transfer register H _REG . Then, the image pickup signal read from the solid-state image sensor 1 is supplied to the encoder 5 via the signal processing unit 4, encoded into a television signal conforming to the NTSC system, and output from the output terminal 8. ..

Next, the second operation mode is the frame read mode, and the control section 7 gives various timing signals in the frame read mode to the CCD drive circuit 6.

In the second operation mode, the CC
The D drive circuit 6 alternately supplies the sensor gate pulses φSG ₁ and φSG ₂ to the image pickup section IM for each field during the vertical blanking period T _VBLK , and the image pickup charges obtained by the photoelectric conversion elements S _{O in the} odd columns. By alternately transferring A _i and the image-capturing charges B _i obtained by the photoelectric conversion elements S _{E in the} even columns to the vertical transfer register IMV _REG for each field, the image-capturing charges A _i corresponding to the interline scanning in the frame read mode. , B _i to the vertical transfer register I
_Read to MV _REG .

Even in this second operation mode,
Immediately before the timing of the sensor gate pulses φSG ₁ and φSG ₂ , high-speed vertical transfer pulses φIM and φST are applied to the vertical transfer register IMV _REG of the image pickup section IM and the vertical transfer register STV _REG of the storage section ST, The unnecessary charges such as smear components in the vertical transfer register IM _REG of the image pickup unit IM are transferred to the vertical transfer register S of the storage unit ST.
High speed transfer to TV _REG . By this high-speed transfer operation,
The vertical transfer register IMV _REG of the image pickup section IM is in an empty state in which unnecessary charges are swept out.

Then, the CCD drive circuit 6 gives sensor gate pulses φSG ₁ and φSG ₂ in a state where the vertical transfer register IMV _REG is emptied, and the photoelectric conversion elements S of odd columns in the image pickup section IM are given. _The image pickup charges A _i obtained by _O and the image pickup charges B _i obtained by the photoelectric conversion elements S _{E in the} even columns are alternately transferred to the vertical transfer register IMV _REG for each field.

Further, the sensor gate pulse φS
Immediately after the timing of G ₁ and φSG ₂ , high-speed vertical transfer pulses φIM and φST are supplied to the vertical transfer register IMV _REG of the image pickup section IM and the vertical transfer register S of the storage section ST.
The charges A _i and B _i in the vertical transfer register IMV _REG of the image pickup section IM are given to the TV _REG and transferred at high speed to the vertical transfer register STV _REG of the storage section ST.

The signal charges A _i and B _i transferred at high speed to the vertical transfer register STV _REG of the storage section ST are
During the subsequent read period, the horizontal transfer register H _REG
Read through.

As described above, in the second operation mode, the imaging charge A _i obtained by the odd-numbered photoelectric conversion elements S _O of the imaging section IM and the imaging charge B _i obtained by the even-numbered photoelectric conversion elements S _E are Each field is alternately transferred to the vertical transfer register IMV _REG, and the image-capturing charges A _i and B _i of each field are transferred from the vertical transfer register STV _REG of the storage section ST through the horizontal transfer register H _REG during the video period. By sequentially reading, the imaging output corresponding to the interlaced scanning is obtained in the frame reading mode. Then, the image pickup signal read from the solid-state image sensor 1 is supplied to the encoder 5 via the signal processing unit 4, encoded into a television signal conforming to the NTSC system, and output from the output terminal 8. ..

Furthermore, the third operation mode is the operation mode of the solid-state image pickup device according to the present invention, and the control unit 7
The CCD drive circuit 6 is operated as follows by giving various timing signals.

In the third operation mode, the CC
As shown in FIG. 3, the D drive circuit 6 alternately supplies the sensor gate pulses φSG ₁ and φSG ₂ to the image pickup unit IM during each field during the video period of each field and the vertical blanking for each field. During the period T _VBLK , the sensor gate pulses φSG ₁ and φSG ₂ are supplied to the imaging unit I.
The image pickup charges A _i obtained by the photoelectric conversion elements S _O in the odd-numbered columns and the image pickup charges B _i obtained by the photoelectric conversion elements S _{E in the} even-numbered columns are alternately changed in the upper and lower combinations for each field. By transferring to the vertical transfer register IMV _REG , the imaging charges A _i + B _i and B _i + A corresponding to the interline scanning in the field read mode.
_{i + 1} is read to the vertical transfer register IMV _REG .

Even in the third operation mode,
Immediately before the timing of the sensor gate pulses φSG ₁ and φSG ₂ in each vertical blanking period T _VBLK , high-speed vertical transfer pulses φIM and φST are vertically transferred to the vertical transfer register IMV _REG of the image pickup unit IM and the vertical transfer of the storage unit ST. given to register STV _REG, unnecessary charges such as smear components of the vertical transfer register IM _REG of the imaging section IM to high-speed transfer in the vertical transfer registers STV _REG of the storage section ST. By this high-speed transfer operation, the sensor gate pulse φ is alternately alternated for each field during the video period of each field.
By applying SG ₁ and φSG ₂ to the image pickup unit IM, the image pickup charges A _i ′ of the odd-numbered photoelectric conversion elements S _O read in the vertical transfer register IMV _REG of the image pickup unit IM
And the imaging charges B _i ′ of the photoelectric conversion elements S _{E in} the even-numbered columns are swept out as unnecessary charges, and the vertical transfer register IMV _REG of the image pickup section IM is in an empty state in which the unnecessary charges are swept out.

Then, the CCD drive circuit 6 gives sensor gate pulses φSG ₁ and φSG ₂ in a state where the vertical transfer register IMV _REG is emptied,
In the image pickup section IM, the image pickup charge A _i obtained by the odd-numbered photoelectric conversion elements S _O and the image pickup charge B _i obtained by the even-numbered photoelectric conversion elements S _E are alternately changed in the upper and lower portions for each field. The above vertical transfer register IMV
Transfer to _REG .

Further, the sensor gate pulse φS
Immediately after the timing of G ₁ and φSG ₂ , high-speed vertical transfer pulses φIM and φST are supplied to the vertical transfer register IMV _REG of the image pickup section IM and the vertical transfer register S of the storage section ST.
The electric charges A _i + B _i and B _i + A _{i + 1} in the vertical transfer register IMV _REG of the image pickup section IM are given to the TV _REG and are transferred at high speed to the vertical transfer register STV _REG of the storage section ST.

Here, the vertical transfer register STV _REG
During the high-speed transfer period, the horizontal transfer pulse φH is also set to the high-speed pulse, so that unnecessary charges are swept out by the high-speed transfer through the horizontal transfer register H _REG . In the third operation mode, the sensor gate pulses φSG ₁ and φSG ₂ are alternately alternated for each field during the video period of each field.
To the image pickup section IM, the image pickup charges A _i ′ of the photoelectric conversion elements S _O of the odd columns and the photoelectric charges of the photoelectric conversion elements S _E of the even columns read to the vertical transfer register IMV _REG of the image pickup section IM. Since the charges B _i ′ are swept out as unnecessary charges, a large amount of unnecessary charges are generated, but a large amount of unnecessary charges can be swept out through the horizontal transfer register H _REG by the high speed transfer.

That is, the horizontal transfer register H
Even if the amount of charge transferred for each transfer is small, the _REG can sweep away a large amount of unnecessary charges by increasing the number of times of transfer by the high-speed transfer.

In the third operation mode as described above, the sensor gate pulses φSG ₁ and φSG ₂ are alternately applied to the image pickup section IM for each field during the video period of each field so that the photoelectric conversion elements in the odd columns are supplied. The image-capturing charge A _i obtained by S _O and the image-capturing charge B _i obtained by the photoelectric conversion elements S _{E in the} even-numbered columns are alternately read out for each field so that the image-capturing charge A _i + B for each field is obtained.
The addition mixing ratio of _i , B _i + A _{i + 1} can be changed from 1: 1 in the normal field read mode. Then, for example, when the addition mixture ratio is set to 1: 2, the imaging charge A _i obtained by the photoelectric conversion elements S _{O in} the odd columns and the imaging charge B _i obtained by the photoelectric conversion elements S _{E in the} even columns of the imaging section IM. The upper and lower combinations are alternately changed for each field and transferred to the vertical transfer register IMV _REG, and the imaging charges A _i + B _i of each field are transferred from the vertical transfer register STV _REG of the storage unit ST to the horizontal transfer register H during the video period. By line-sequentially reading through the _REG , an imaging output corresponding to interlaced scanning is obtained in the field reading mode. The image pickup signal read from the solid-state image sensor 1 is supplied to the signal processing unit 4
Is supplied to the encoder 5 via the, encoded into a television signal conforming to the NTSC system, and output from the output terminal 8.

As described above, by changing the addition mixing ratio of the imaging charges A _i obtained by the photoelectric conversion elements S _O in the odd columns and the imaging charges B _i obtained by the photoelectric conversion elements S _{E in the} even columns, FIG. As shown, a vertical resolution (MTF) intermediate between the first or normal field read mode and the second or frame read mode can be obtained. Then, for example, the addition mixing ratio is set to 1: 2 to obtain an image output corresponding to the interlaced scanning in the field read mode, thereby improving the vertical resolution as compared with the first operation mode, that is, the normal field read mode. Further, the dynamic range and sensitivity can be maintained at 75%, and the dynamic range and sensitivity can be improved more than in the second operation mode, that is, the frame read mode.

[0041]

As is apparent from the above description, in the solid-state image pickup device according to the present invention, the image sensor drive control means obtains the odd-numbered photoelectric conversion elements of the frame interline transfer type solid-state image sensor. The effective charge storage period of each photoelectric conversion element is controlled by controlling the readout of the imaging charge and the imaging charge obtained by the even-numbered photoelectric conversion elements to the vertical transfer register of the imaging section alternately every field during the video period. Can be changed independently for the photoelectric conversion elements in the odd-numbered columns and the photoelectric conversion elements in the even-numbered columns. The imaging charges read out to the vertical transfer register of the imaging unit alternately in every field during the video period are stored in the vertical blanking period in each field.
High-speed transfer from the vertical transfer register of the image pickup section to the vertical transfer register of the storage section, high-speed line-sequential transfer from the vertical transfer register of the storage section through the horizontal transfer register, and sweeping out as unnecessary charges. As described above, even if the charge transfer amount for each transfer is small, the horizontal transfer register can increase
A large amount of unnecessary charges can be swept away during the vertical blanking period for each field. Then, the imaging charges obtained by the photoelectric conversion elements in the odd-numbered columns and the photoelectric conversion elements in the even-numbered columns adjacent to each other are added and mixed during the vertical blanking period for each field, read out to the vertical transfer register of the imaging section, and stored. High-speed transfer to the vertical transfer register of the storage section, and during the video period, the image-capturing charges are line-sequentially read from the vertical transfer register of the storage section through the horizontal transfer register, thereby providing a vertical resolution higher than that in the field read mode. It is possible to obtain an imaging output with a small decrease in (MTF), less afterimage than in the case of frame reading, and a wide dynamic range.

As described above, in the solid-state image pickup device according to the present invention, the effective charge storage period of each photoelectric conversion element of the solid-state image sensor is controlled by the image sensor drive control means so that the photoelectric conversion elements of odd columns and the photoelectric conversion elements of even columns are used. , And the photoelectric conversion elements in the odd-numbered columns and the photoelectric conversion elements in the even-numbered columns which are adjacent to each other are added and mixed for each field to be read out. The vertical resolution (MTF) can be changed in accordance with the addition mixing ratio of the image pickup charges obtained by the photoelectric conversion elements in the even-numbered columns, and the vertical resolution is less deteriorated than in the field reading mode. It is possible to obtain an imaging output with less afterimage and a wider dynamic range than in the case of reading.

Therefore, according to the present invention, it is possible to provide a solid-state imaging device in which the vertical resolution can be varied without impairing the dynamic resolution.

[Brief description of drawings]

FIG. 1 is a block diagram showing a configuration of a solid-state imaging device according to the present invention.

FIG. 2 is a schematic plan view showing a configuration of a frame interline transfer type CCD image sensor used in the solid-state imaging device.

FIG. 3 is a timing chart showing an operation of the solid-state imaging device.

FIG. 4 is a characteristic diagram showing a vertical MTF characteristic of an image pickup signal obtained by the solid-state image pickup device.

FIG. 5 is a timing chart showing an operation in a field read mode.

FIG. 6 is a timing chart showing an operation in a frame read mode.

[Explanation of symbols]

1 ... Imaging optical system 2 ... CCD image sensor 3 ... Imaging unit 4 ... Signal processing unit 5 ...・ ・ ・ ・ ・ ・ Encoder 6 ・ ・ ・ ・ ・ ・ ・ ・ CCD drive circuit 7 ・ ・ ・ ・ ・ ・ Control unit 8 ・ ・ ・ ・ ・ ・ Output terminal S ・ ・ ・ ・ ・ ・Photoelectric conversion element IM ・ ・ ・ Imaging unit IMV _REG・ ・ ・ Vertical transfer register ST ・ ・ ・ ・ ・ ・ Storage unit STV _REG・ ・ ・ Vertical transfer register H _REG・ ・ ・.... Horizontal transfer registers

Claims (2)

[Claims] 1. A solid-state image sensor in which photoelectric conversion elements are arranged in a matrix, and effective photoelectric charge accumulation periods of the photoelectric conversion elements of the solid-state image sensor are odd-numbered photoelectric conversion elements and even-numbered photoelectric conversion elements. And image sensor drive control means for controlling the addition and mixing of the image-capturing charges obtained by the photoelectric conversion elements in the odd-numbered columns and the photoelectric conversion elements in the even-numbered columns which are adjacent to each other, and reading them out. Solid-state imaging device. 2. An image pickup section having a vertical transfer register for reading out image pickup charge obtained by photoelectric conversion elements arranged in a matrix, and a vertical transfer register for high-speed transfer of image pickup charge from the vertical transfer register of the image pickup section. A solid-state image sensor including a storage unit having a horizontal transfer register unit in which image-capturing charges are line-sequentially transferred from a vertical transfer register of the storage unit, and an image obtained by photoelectric conversion elements in odd columns of the solid-state image sensor. The electric charges and the imaging charges obtained by the photoelectric conversion elements in the even columns are alternately read into the vertical transfer register of the image pickup unit for each field during the video period, and the image pickup unit is read during the vertical blanking period for each field. High-speed transfer from the vertical transfer register of the storage unit to the vertical transfer register of the storage unit, and from the vertical transfer register of the storage unit to the water transfer unit. Control is performed to transfer the image-capturing charges line-sequentially at high speed through the transfer register and to sweep the image-capturing charges, and vertical blanking of the image-capturing charges obtained by the photoelectric conversion elements in the odd-numbered columns and the photoelectric conversion elements in the even-numbered columns adjacent to each other is performed for each field. During the video period, the signals are added and mixed during the period, read out to the vertical transfer register of the image pickup unit, and transferred at high speed to the vertical transfer register of the accumulation unit.
A solid-state image pickup device comprising: an image sensor drive control means for controlling line-sequential reading of image pickup charges from the vertical transfer register of the storage section through the horizontal transfer register.