JPH05259434A - Organic rectifying element - Google Patents
Organic rectifying elementInfo
- Publication number
- JPH05259434A JPH05259434A JP8999392A JP8999392A JPH05259434A JP H05259434 A JPH05259434 A JP H05259434A JP 8999392 A JP8999392 A JP 8999392A JP 8999392 A JP8999392 A JP 8999392A JP H05259434 A JPH05259434 A JP H05259434A
- Authority
- JP
- Japan
- Prior art keywords
- group
- film
- organic
- layer
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 claims description 27
- 229920000642 polymer Polymers 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 25
- 239000007769 metal material Substances 0.000 claims description 16
- 238000000197 pyrolysis Methods 0.000 claims description 14
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 229910002064 alloy oxide Inorganic materials 0.000 claims description 3
- 239000003575 carbonaceous material Substances 0.000 claims description 3
- 229910052976 metal sulfide Inorganic materials 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 229920002994 synthetic fiber Polymers 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims 1
- 239000010931 gold Substances 0.000 abstract description 17
- 229910052737 gold Inorganic materials 0.000 abstract description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 14
- 238000000034 method Methods 0.000 abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 abstract description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 12
- QENGPZGAWFQWCZ-UHFFFAOYSA-N 3-Methylthiophene Chemical compound CC=1C=CSC=1 QENGPZGAWFQWCZ-UHFFFAOYSA-N 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 5
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 238000006116 polymerization reaction Methods 0.000 abstract description 3
- 238000001771 vacuum deposition Methods 0.000 abstract description 3
- FQSHIHQTYANTLG-UHFFFAOYSA-N 5-methyl-10-[(4-methylphenyl)methyl]phenazine Chemical compound C12=CC=CC=C2N(C)C2=CC=CC=C2N1CC1=CC=C(C)C=C1 FQSHIHQTYANTLG-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 42
- 239000010408 film Substances 0.000 description 32
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 23
- -1 p-methylbenzyl group Chemical group 0.000 description 23
- VEPOHXYIFQMVHW-XOZOLZJESA-N 2,3-dihydroxybutanedioic acid (2S,3S)-3,4-dimethyl-2-phenylmorpholine Chemical compound OC(C(O)C(O)=O)C(O)=O.C[C@H]1[C@@H](OCCN1C)c1ccccc1 VEPOHXYIFQMVHW-XOZOLZJESA-N 0.000 description 22
- 239000000758 substrate Substances 0.000 description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229920001971 elastomer Polymers 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 239000005060 rubber Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- OJFOWGWQOFZNNJ-UHFFFAOYSA-N 3,4-dimethyl-1h-pyrrole Chemical compound CC1=CNC=C1C OJFOWGWQOFZNNJ-UHFFFAOYSA-N 0.000 description 2
- SDKQRNRRDYRQKY-UHFFFAOYSA-N Dioxacarb Chemical compound CNC(=O)OC1=CC=CC=C1C1OCCO1 SDKQRNRRDYRQKY-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000001720 action spectrum Methods 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 108010077372 mast cell degranulating peptide Proteins 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 229920001197 polyacetylene Polymers 0.000 description 2
- 229920002239 polyacrylonitrile Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000128 polypyrrole Polymers 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 125000001989 1,3-phenylene group Chemical group [H]C1=C([H])C([*:1])=C([H])C([*:2])=C1[H] 0.000 description 1
- 125000001140 1,4-phenylene group Chemical group [H]C1=C([H])C([*:2])=C([H])C([H])=C1[*:1] 0.000 description 1
- OXHNLMTVIGZXSG-UHFFFAOYSA-N 1-Methylpyrrole Chemical compound CN1C=CC=C1 OXHNLMTVIGZXSG-UHFFFAOYSA-N 0.000 description 1
- 125000006512 3,4-dichlorobenzyl group Chemical group [H]C1=C(Cl)C(Cl)=C([H])C(=C1[H])C([H])([H])* 0.000 description 1
- GPSFYJDZKSRMKZ-UHFFFAOYSA-N 3,4-dimethylthiophene Chemical compound CC1=CSC=C1C GPSFYJDZKSRMKZ-UHFFFAOYSA-N 0.000 description 1
- 125000006186 3,5-dimethyl benzyl group Chemical group [H]C1=C(C([H])=C(C([H])=C1C([H])([H])[H])C([H])([H])*)C([H])([H])[H] 0.000 description 1
- FEKWWZCCJDUWLY-UHFFFAOYSA-N 3-methyl-1h-pyrrole Chemical compound CC=1C=CNC=1 FEKWWZCCJDUWLY-UHFFFAOYSA-N 0.000 description 1
- RHGZMEBNOXHOQS-UHFFFAOYSA-N 4-[(10-methylphenazin-5-yl)methyl]benzonitrile Chemical compound C12=CC=CC=C2N(C)C2=CC=CC=C2N1CC1=CC=C(C#N)C=C1 RHGZMEBNOXHOQS-UHFFFAOYSA-N 0.000 description 1
- 125000006281 4-bromobenzyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1Br)C([H])([H])* 0.000 description 1
- 125000006283 4-chlorobenzyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1Cl)C([H])([H])* 0.000 description 1
- 125000004176 4-fluorobenzyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1F)C([H])([H])* 0.000 description 1
- 125000006483 4-iodobenzyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1I)C([H])([H])* 0.000 description 1
- CVQRWMGJULHZNY-UHFFFAOYSA-N 5-[(1,5-dinitrocyclohexa-2,4-dien-1-yl)methyl]-10-methylphenazine Chemical compound CN1C=2C=CC=CC2N(C2=CC=CC=C12)CC1(CC(=CC=C1)[N+](=O)[O-])[N+](=O)[O-] CVQRWMGJULHZNY-UHFFFAOYSA-N 0.000 description 1
- QKCCEQKSZZNXFP-UHFFFAOYSA-N 5-[(4-methoxyphenyl)methyl]-10-methylphenazine Chemical compound C1=CC(OC)=CC=C1CN1C2=CC=CC=C2N(C)C2=CC=CC=C21 QKCCEQKSZZNXFP-UHFFFAOYSA-N 0.000 description 1
- XWUCFAJNVTZRLE-UHFFFAOYSA-N 7-thiabicyclo[2.2.1]hepta-1,3,5-triene Chemical compound C1=C(S2)C=CC2=C1 XWUCFAJNVTZRLE-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- MBMLMWLHJBBADN-UHFFFAOYSA-N Ferrous sulfide Chemical compound [Fe]=S MBMLMWLHJBBADN-UHFFFAOYSA-N 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910001245 Sb alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000012963 UV stabilizer Substances 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 125000000738 acetamido group Chemical group [H]C([H])([H])C(=O)N([H])[*] 0.000 description 1
- 239000006230 acetylene black Substances 0.000 description 1
- 125000004442 acylamino group Chemical group 0.000 description 1
- 125000003282 alkyl amino group Chemical group 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 239000002140 antimony alloy Substances 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 229910021383 artificial graphite Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011294 coal tar pitch Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- INPLXZPZQSLHBR-UHFFFAOYSA-N cobalt(2+);sulfide Chemical compound [S-2].[Co+2] INPLXZPZQSLHBR-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000004663 dialkyl amino group Chemical group 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000006232 furnace black Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000003273 ketjen black Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 125000000250 methylamino group Chemical group [H]N(*)C([H])([H])[H] 0.000 description 1
- 125000004573 morpholin-4-yl group Chemical group N1(CCOCC1)* 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 125000006505 p-cyanobenzyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1C#N)C([H])([H])* 0.000 description 1
- 125000006503 p-nitrobenzyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1[N+]([O-])=O)C([H])([H])* 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000011301 petroleum pitch Substances 0.000 description 1
- 150000002988 phenazines Chemical class 0.000 description 1
- 125000001791 phenazinyl group Chemical group C1(=CC=CC2=NC3=CC=CC=C3N=C12)* 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 125000000286 phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000015 polydiacetylene Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000582 polyisocyanurate Polymers 0.000 description 1
- 239000011495 polyisocyanurate Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001184 polypeptide Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 108090000765 processed proteins & peptides Proteins 0.000 description 1
- 102000004196 processed proteins & peptides Human genes 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000000719 pyrrolidinyl group Chemical group 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- WWNBZGLDODTKEM-UHFFFAOYSA-N sulfanylidenenickel Chemical compound [Ni]=S WWNBZGLDODTKEM-UHFFFAOYSA-N 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/20—Organic diodes
- H10K10/26—Diodes comprising organic-organic junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Led Devices (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は新しい有機整流素子に関
するものであり、本発明の有機整流素子は、電気整流
器、トランジスター、整流用ダイオード、フォトダイオ
ード、発光ダイオードあるいはスイッチ等としてエレク
トロニクスまたはオプトエレクトロニクスの関連する工
業において一般に広く応用することができる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a new organic rectifying device, which is used as an electric rectifier, a transistor, a rectifying diode, a photodiode, a light emitting diode, a switch or the like for electronics or optoelectronics. It is generally widely applicable in the relevant industries.
【0002】[0002]
【従来の技術】有機整流素子としてはp-型有機半導体と
仕事関数の小さな金属薄膜とを組み合わせたショットキ
ー接合型素子が知られており、Al/メタルフリーフタロ
シアニン/Auの組み合わせ、Al/ポリ-3-メチルチオフ
ェン/Auの組み合わせが研究されている。本発明者らは
すでに特開昭59-28388号および特開平3-91269号におい
て示されるように有機二層型光電変換素子を開発してそ
の成果を明らかにしたが、さらに効果的な有機整流素子
の開発の必要性に迫られたのである。2. Description of the Related Art As an organic rectifying element, a Schottky junction type element in which a p-type organic semiconductor and a metal thin film having a small work function are combined is known, and a combination of Al / metal-free phthalocyanine / Au, Al / poly The 3-methylthiophene / Au combination has been investigated. The present inventors have already developed an organic two-layer type photoelectric conversion element as shown in JP-A-59-28388 and JP-A-3-91269, and have clarified the results. It was necessary to develop the device.
【0003】[0003]
【発明が解決しようとする課題】本発明者らは従来の技
術の欠点である整流作用を呈するが低効率であるという
点に着目し、確実に効率よく整流作用を増強する有機化
合物の探索を行ない、その構造について検討を重ね、つ
いで合成ならびにその性質、応用についても研究を進展
させ今般遂に刮目すべき本発明を完成するに至った。DISCLOSURE OF THE INVENTION The present inventors have focused on the fact that they exhibit a rectifying action, which is a drawback of the prior art, but have a low efficiency, and have searched for an organic compound that surely and efficiently enhances the rectifying action. The present invention has been carried out, the structure thereof has been repeatedly investigated, and then the synthesis, the properties thereof, and the applications thereof have been advanced to finally complete the present invention which should be conspicuous.
【0004】[0004]
【課題を解決するための手段】本発明者ら5-(電子供与
性基)置換-10-(アラルキルまたは核置換アラルキル)-5,
10-ジヒドロフェナジン膜(以下、フェナジン膜と略称
する)と高分子導電体材料層または金属系材料層とが積
層されている構成部分を有する素子が優れた有機整流作
用を有することを明らかにした。ここにいう高分子導電
体材料層は有機合成系材料、有機熱分解系材料および炭
素系材料よりなる群から選ばれた少なくとも一つの高分
子導電体材料からなる層であり、また金属系材料層は金
属、合金、金属酸化物、金属硫化物および合金酸化物よ
りなる群から選ばれた少なくとも一つの金属系材料から
なる層である。The present inventors have found that 5- (electron-donating group) -substituted-10- (aralkyl or nuclear-substituted aralkyl) -5,
It has been clarified that an element having a constituent part in which a 10-dihydrophenazine film (hereinafter abbreviated as phenazine film) and a polymer conductor material layer or a metal material layer are laminated has an excellent organic rectifying action. .. The polymer conductor material layer referred to here is a layer made of at least one polymer conductor material selected from the group consisting of organic synthetic materials, organic pyrolysis materials, and carbon materials, and a metal material layer. Is a layer made of at least one metal-based material selected from the group consisting of metals, alloys, metal oxides, metal sulfides and alloy oxides.
【0005】5-(電子供与性基)置換-10-(アラルキルま
たは核置換アラルキル)-5,10-ジヒドロフェナジン(以
下、フェナジンと略称する)における電子供与性基と
は、アルキル基、アラルキル基、アミノ基、アルキルア
ミノ基、ジアルキルアミノ基、アシルアミノ基、アルキ
ルアシルアミノ基、ピロリジニル基、ペピリジル基、モ
ルホリノ基等であり、代表的なものとしては、メチル
基、エチル基、プロピル基、イソプロピル基、n-ブチル
基、イソブチル基、t-ブチル基、シクロヘキシル基、メ
チルアミノ基、アセチルアミノ基、下記に示すアラルキ
ル基等である。The electron-donating group in 5- (electron-donating group) -substituted-10- (aralkyl or nucleus-substituted aralkyl) -5,10-dihydrophenazine (hereinafter abbreviated as phenazine) means an alkyl group or an aralkyl group. , An amino group, an alkylamino group, a dialkylamino group, an acylamino group, an alkylacylamino group, a pyrrolidinyl group, a pepyridyl group, a morpholino group, and the like. Typical examples are a methyl group, an ethyl group, a propyl group, and an isopropyl group. , N-butyl group, isobutyl group, t-butyl group, cyclohexyl group, methylamino group, acetylamino group, aralkyl group shown below and the like.
【0006】フェナジンにおける10-(アラルキルまたは
核置換アラルキル)基とはベンジル基、フェニルエチル
基、p-アルキルベンジル基(たとえばp-メチルベンジル
基、p-エチルベンジル基)、p-アルコキシベンジル基
(たとえばp-メトキシベンジル基)、p-アミノベンジル
基、p-(N-置換アミノ)ベンジル基(たとえばp-メチルア
ミノベンジル基、p-アセチルアミノベンジル基)、p-シ
アノベンジル基、p-ニトロベンジル基、p-フルオロベン
ジル基、p-フルオロメチルベンジル基、p-クロロベンジ
ル基、p-ブロモベンジル基、p-ヨードベンジル基、m-ジ
アルキルベンジル基(たとえば3,5-ジメチルベンジル
基)、m-ジアルコキシベンジル基(たとえば3,5-ジメト
キシベンジル基、m-ジアミノベンジル基、m-ジ(N-置換
アミノ)ベンジル基、m-ビス(トリフルオロメチル)ベン
ジル基、m-ジニトロベンジル基、m-ジフルオロベンジル
基、o-ジクロベンジル基(たとえば2,3-ジクロロベンジ
ル基、3,4-ジクロロベンジル基)、m-ジクロロベンジル
基、(たとえば2,4-ジクロロベンジル基、3,5-ジクロロ
ベンジル基)、m-ジブロモベンジル基、m-ジヨードベン
ジル基等がある。なおフェナジンの10-位に結合するア
ラルキル基のアルキル基は炭素原子数が1〜4個であり、
それらは直鎖でも分岐していてもよいのは勿論である。The 10- (aralkyl or nucleus-substituted aralkyl) group in phenazine is a benzyl group, a phenylethyl group, a p-alkylbenzyl group (for example, a p-methylbenzyl group, a p-ethylbenzyl group), a p-alkoxybenzyl group ( For example, p-methoxybenzyl group), p-aminobenzyl group, p- (N-substituted amino) benzyl group (eg p-methylaminobenzyl group, p-acetylaminobenzyl group), p-cyanobenzyl group, p-nitro Benzyl group, p-fluorobenzyl group, p-fluoromethylbenzyl group, p-chlorobenzyl group, p-bromobenzyl group, p-iodobenzyl group, m-dialkylbenzyl group (for example, 3,5-dimethylbenzyl group), m-dialkoxybenzyl group (eg 3,5-dimethoxybenzyl group, m-diaminobenzyl group, m-di (N-substituted amino) benzyl group, m-bis (trifluoromethyl group) ) Benzyl group, m-dinitrobenzyl group, m-difluorobenzyl group, o-dichlorobenzyl group (for example, 2,3-dichlorobenzyl group, 3,4-dichlorobenzyl group), m-dichlorobenzyl group (for example, 2, 4-dichlorobenzyl group, 3,5-dichlorobenzyl group), m-dibromobenzyl group, m-diiodobenzyl group, etc. The alkyl group of the aralkyl group bonded to the 10-position of phenazine has a carbon number of 1 to 4 pieces,
Of course, they may be linear or branched.
【0007】本フェナジンは上記した化合物であれば単
独でも2種以上の混合物でもよい。これらのフェナジン
が膜とされた場合の長期安定化のために若干量の酸化防
止剤、耐紫外線安定剤、膜厚制御材としてのスペーサー
粉末(プラスチックス粉末、シリカ粉末、シリコーンゴ
ム粉末等)を加えてもよく、また膜の厚さの確認材とし
て色素(着色料、蛍光料)を少量含有させてもよい。The phenazine may be a single compound or a mixture of two or more compounds as long as it is the above compound. Some amount of antioxidant, UV stabilizer, spacer powder (plastics powder, silica powder, silicone rubber powder, etc.) as a film thickness control material for long-term stabilization when these phenazines are formed into a film. It may be added, or a small amount of a dye (coloring agent, fluorescent agent) may be contained as a material for confirming the thickness of the film.
【0008】高分子導電体材料のうち有機合成系材料と
しては、ポリピロール、ポリ-3-メチルピロール、ポリ-
3,4-ジメチルピロール、ポリチオフェン、ポリ-3-メチ
ルチオフェン、ポリ-3,4-ジメチルチオフェン、ポリ-p-
フェニン、ポリアセチレン、ポリ-p-フェニレンスルフ
ィド、ポリ-m-フェニレン、ポリ-p-フェニレンオキシ
ド、ポリシアノアセチレン、ポリフェニルアセチレン、
ポリビニルカルバゾール、ポリジアセチレン、ポリピリ
ジン、ポリ(N-メチルピロール)、ポリピコリン等があ
り、これらは未ドーピング物、ドーピング物のいずれで
も使用することができ、またこれらを含む導電性のゴム
や樹脂も使用できる。Among the polymer conductor materials, organic synthetic materials include polypyrrole, poly-3-methylpyrrole and poly-
3,4-dimethylpyrrole, polythiophene, poly-3-methylthiophene, poly-3,4-dimethylthiophene, poly-p-
Phenine, polyacetylene, poly-p-phenylene sulfide, poly-m-phenylene, poly-p-phenylene oxide, polycyanoacetylene, polyphenylacetylene,
Polyvinylcarbazole, polydiacetylene, polypyridine, poly (N-methylpyrrole), polypicoline, etc. can be used, either undoped or doped, and conductive rubber or resin containing them is also used. it can.
【0009】高分子導電体材料のうち有機熱分解系材料
としては、合成グラファイト、導電性炭素繊維、熱分解
ポリイミド、熱分解ポリオキサジアゾール、熱分解ポリ
オレフィン、熱分解ポリアミド、熱分解ポリアクリロニ
トリル、熱分解ポリ塩化ビニル、熱分解ポリビニルアル
コール、熱分解エポキシ樹脂、熱分解フェノール樹脂、
熱分解架橋ポリスチレン、熱分解ポリイソシアヌレート
および熱分解ポリペプチド等があり、これらは未ドーピ
ング物、ドーピング物のいずれでも使用することがで
き、またこれらを含む導電性のゴムや樹脂も使用でき
る。Among the polymer conductor materials, organic pyrolysis materials include synthetic graphite, conductive carbon fiber, pyrolysis polyimide, pyrolysis polyoxadiazole, pyrolysis polyolefin, pyrolysis polyamide, pyrolysis polyacrylonitrile, Pyrolysis polyvinyl chloride, pyrolysis polyvinyl alcohol, pyrolysis epoxy resin, pyrolysis phenol resin,
There are pyrolyzed crosslinked polystyrene, pyrolyzed polyisocyanurate, and pyrolyzed polypeptide, which can be used either as undoped material or doped material, and also as a conductive rubber or resin containing them.
【0010】高分子導電体材料のうち炭素系材料として
は、グラファイト、グラスカーボン、ファーネスブラッ
ク、ケッチェンブラック、アセチレンブラック、石油ピ
ッチ炭化物およびコールタールピッチ炭化物等があり、
これらは未ドーピング物、ドーピング物のいずれでも使
用することができ、またこれらを含む導電性のゴムや樹
脂も使用できる。Among the polymer conductor materials, carbonaceous materials include graphite, glass carbon, furnace black, Ketjen black, acetylene black, petroleum pitch carbide, coal tar pitch carbide, and the like.
These may be either undoped or doped, and conductive rubber or resin containing them may also be used.
【0011】金属系材料としては、金属(たとえば金、
銀、白金、パラジウム、ニッケル、アルミニウム、イン
ジウム、マグネシウム、カルシウム、ケイ素、チタニウ
ム、ジルコニウム等)、合金(たとえばパラジウム合
金、アルミニウム合金、チタニウム合金、マグネシウム
合金、スズ合金、インジウム合金、アンチモン合金)、
金属酸化物(たとえば酸化アルミニウム、酸化インジウ
ム、酸化ケイ素、酸化チタニウム、酸化スズ、酸化亜
鉛、酸化銅、酸化アンチモン、酸化ジルコニウム等でド
ーパントにより格子欠陥を作って導電性を付与したも
の)、金属硫化物(たとえば硫化鉄、硫化コバルト、硫
化ニッケル、硫化銅等で格子欠陥を作って導電性を付与
したもの)、合金酸化物(上記合金の酸化物あるいは上
記金属酸化物の混合物)等があり、またこれらを含む導
電性のゴムや樹脂も使用できる。Metal-based materials include metals such as gold,
Silver, platinum, palladium, nickel, aluminum, indium, magnesium, calcium, silicon, titanium, zirconium, etc.), alloy (for example, palladium alloy, aluminum alloy, titanium alloy, magnesium alloy, tin alloy, indium alloy, antimony alloy),
Metal oxides (for example, aluminum oxide, indium oxide, silicon oxide, titanium oxide, tin oxide, zinc oxide, copper oxide, antimony oxide, zirconium oxide, etc., which have been made conductive by forming lattice defects with a dopant), metal sulfide (For example, iron sulfide, cobalt sulfide, nickel sulfide, copper sulfide, etc. having lattice defects to provide conductivity), alloy oxides (oxides of the above alloys or mixtures of the above metal oxides), etc. In addition, conductive rubber or resin containing these can also be used.
【0012】本発明にいうフェナジン膜は高分子導電体
材料層と高分子導電体材料層の間に、または高分子導電
体材料層と金属系材料層の間に、あるいは金属系材料層
と金属系材料層の間に設けられる。その最も簡単なもの
はこのいずれかの組み合わせの一積層でよいが、さらに
効果を強化するためにはたとえば高分子導電体材料層、
フェナジン膜、高分子導電体材料層、フェナジン膜、金
属系材料層等という具合に複層または多層構造にするの
が好ましい。この場合、高分子導電体材料層と金属系材
料層とは適宣入れ替えて構成してもよいのは勿論であ
る。The phenazine film referred to in the present invention is provided between the polymer conductor material layer and the polymer conductor material layer, or between the polymer conductor material layer and the metal material layer, or between the metal material layer and the metal material layer. It is provided between the system material layers. The simplest one may be a single layer of any combination, but to further enhance the effect, for example, a polymer conductor material layer,
It is preferable that a phenazine film, a polymer conductive material layer, a phenazine film, a metal-based material layer, and the like have a multilayer structure or a multilayer structure. In this case, it goes without saying that the polymer conductor material layer and the metal-based material layer may be appropriately replaced with each other.
【0013】以上の積層物は通常基板(ガラス、プラス
チックス、フィルム、金属シート、セラミック板、プラ
スチックス成型品等)の上に設けられ適当な電極部分が
付けられた後さらに要すればフィルムで被覆されること
になるが、目的によっては基板同士の間に積層されても
よい。したがって、この積層物の厚さは基板の厚さ、高
分子導電体材料層の厚さあるいは金属系材料層の厚さに
よって任意に変わりうる。しかしながら、フェナジン膜
については単層で200〜5000Åの厚さにするのがよい。
したがって、フェナジン膜が重層される場合はその重層
回数に応じて合計厚さは増加することになるが、各フェ
ナジン膜の厚さを200〜5000Åの範囲内で各膜の厚さを
薄くし、200〜2000Å程度になるように留意するのが好
ましい。なお膜厚は均一になるよう作業に注意すべきで
ある。The above laminate is usually provided on a substrate (glass, plastics, film, metal sheet, ceramic plate, plastics molded product, etc.), and after suitable electrode parts are attached, it is a film if necessary. Although it is coated, it may be laminated between the substrates depending on the purpose. Therefore, the thickness of this laminate can be arbitrarily changed according to the thickness of the substrate, the thickness of the polymer conductor material layer or the thickness of the metal-based material layer. However, the phenazine film is preferably a single layer with a thickness of 200 to 5000Å.
Therefore, when the phenazine film is overlaid, the total thickness will increase according to the number of times it is overlaid, but the thickness of each phenazine film is reduced within the range of 200 to 5000Å, It is preferable to pay attention to the range of 200 to 2000Å. Care should be taken to ensure that the film thickness is uniform.
【0014】本発明のフェナジン膜を形成させる方法と
しては、次のいずれかの方法が採用される。 (1)真空蒸着法またはスパッタリング法 (2)溶液を塗装(キャスト法を含む)して乾燥する方法 (3)あらかじめ膜化したものを載置(加圧法、接着法、
静電貼付法)する方法 フェナジン膜は積層面の全面に形成されるばかりではな
く、目的に応じて予定された形にパターン化してもよ
く、また部分的に不要部分をエッチング除去してパター
ン化してもよい。As a method for forming the phenazine film of the present invention, any one of the following methods is adopted. (1) Vacuum evaporation method or sputtering method (2) Method of coating solution (including casting method) and drying (3) Placing a film in advance (pressurization method, adhesion method,
Electrostatic sticking method) The phenazine film is not only formed on the entire surface of the laminated surface, but it may be patterned into a predetermined shape according to the purpose, or the unnecessary portion is partially removed by etching to form a pattern. May be.
【0015】本発明による有機整流素子の構造の基本的
な一例について説明する。図1に示すように、有機整流
素子は、基板1と、基板1上に形成された電極2と、電
極2上に形成された高分子導電体層3と、高分子導電体
層3上に形成されたフェナジン膜4と、フェナジン膜4
上に形成された電極5とによって構成されている。A basic example of the structure of the organic rectifier according to the present invention will be described. As shown in FIG. 1, the organic rectifying device includes a substrate 1, an electrode 2 formed on the substrate 1, a polymer conductor layer 3 formed on the electrode 2, and a polymer conductor layer 3 formed on the polymer conductor layer 3. Formed phenazine film 4 and phenazine film 4
It is composed of the electrode 5 formed above.
【0016】基板1上に設けられる電極2は、実質的に
基板1の全面を覆った透明電極にするのが実験室的には
好ましい。透明電極は、ガラス板、透明プラスチックス
シートまたはフィルムなどの基板1の上に、金、銀、ア
ルミニウム、インジウム、酸化インジウムスズ(ITO
膜)、酸化スズ(ネサ膜)を蒸着することによって形成
することができる。また、電極5は、金、銀、銅、アル
ミニウムまたはニッケルを蒸着することによって形成す
ることができる。なお、特に単層型として用いる場合
は、高分子導電体層3を省略することができる。It is preferable from a laboratory point of view that the electrode 2 provided on the substrate 1 is a transparent electrode which substantially covers the entire surface of the substrate 1. The transparent electrode is formed by depositing gold, silver, aluminum, indium, indium tin oxide (ITO) on the substrate 1 such as a glass plate, a transparent plastic sheet or a film.
Film) and tin oxide (nesa film) can be formed by vapor deposition. Further, the electrode 5 can be formed by depositing gold, silver, copper, aluminum or nickel. The polymer conductor layer 3 can be omitted particularly when used as a single layer type.
【0017】有機整流素子の製作手順は、基板1上に形
成される電極2の種類によって異なるが、アルミニウム
を一方の電極として用いる場合には、まず、アルミニウ
ム電極上に本発明のフェナジン膜を真空蒸着法、塗布
法、キャスト法、スピンコート法等の方法で作り、その
上に高分子導電体層を積層するのが好ましい。そして必
要に応じて、さらにその上に金電極等の対極を真空蒸着
すればよい。The manufacturing procedure of the organic rectifying device differs depending on the type of the electrode 2 formed on the substrate 1. When aluminum is used as one of the electrodes, first, the phenazine film of the present invention is vacuumed on the aluminum electrode. It is preferable that the layer is formed by a method such as a vapor deposition method, a coating method, a casting method, a spin coating method, and a polymer conductor layer is laminated thereon. Then, if necessary, a counter electrode such as a gold electrode may be vacuum-deposited thereon.
【0018】一方、スッパタリング法等で形成された透
明電極、たとえば金電極を有する基板を用いる場合に
は、金電極上に高分子導電体層を電解酸化重合法等で積
層し電機化学的に脱ドーピング処理をした後、その上に
フェナジン膜を真空蒸着等で積層するのが便利である。
さらに、必要に応じてアルミニウム等の電極を真空蒸着
すればよいのである。On the other hand, when a substrate having a transparent electrode formed by a sputtering method or the like, for example, a gold electrode is used, a polymer conductor layer is laminated on the gold electrode by an electrolytic oxidation polymerization method or the like, and electromechanically After the dedoping treatment, it is convenient to stack a phenazine film on it by vacuum evaporation or the like.
Further, an electrode such as aluminum may be vacuum-deposited if necessary.
【0019】[0019]
【作用】本発明の有機整流素子では、たとえば高分子導
電体層とフェナジン膜との界面バリヤーにおいて効果的
な整流作用が行われる。さらに、フェナジン膜と金属系
材料層との界面においても整流作用が行われるので、従
来公知の有機整流素子よりもはるかに優れた整流作用を
有する素子をつくることができるようになった。In the organic rectifying device of the present invention, an effective rectifying action is performed, for example, at the interface barrier between the polymer conductor layer and the phenazine film. Further, since the rectifying action is performed also at the interface between the phenazine film and the metal-based material layer, it becomes possible to manufacture an element having a far superior rectifying action than the conventionally known organic rectifying element.
【0020】本発明の有機整流素子では、高分子導電体
層とフェナジン膜との界面において、ショットキー型も
しくはヘテロ接合型のバリヤーが形成され、自発的に形
成された電位勾配にしたがって順方向の電圧印加によっ
て電荷の注入と両層を横切る電荷の輸送が生ずるが、逆
方向の電圧印加では電位勾配に逆らうため電流は流れ
ず、ダイオードとして機能する。また、光照射によって
界面において電荷の分離が生じ、電位勾配に沿って電荷
の輸送が生じる。したがって、有機整流素子の両電極間
に負荷をかけ外部で短絡することによって光電流が得ら
れ、フォトダイオードとしても機能する。さらに順方向
の電圧印加によって注入された電荷がバルク中の反対電
荷と再結合する際に発光することを利用して、発光ダイ
オードとしても機能せしめることができる。In the organic rectifying device of the present invention, a Schottky type or heterojunction type barrier is formed at the interface between the polymer conductor layer and the phenazine film, and the forward direction is generated according to the potential gradient formed spontaneously. When a voltage is applied, injection of charges and transport of charges across both layers occur, but when a voltage is applied in the opposite direction, a current does not flow because it opposes the potential gradient, and it functions as a diode. In addition, the light irradiation causes charge separation at the interface, which causes charge transport along the potential gradient. Therefore, a photocurrent is obtained by applying a load between both electrodes of the organic rectifying element and short-circuiting the electrodes externally, and it also functions as a photodiode. Further, it can be made to function as a light emitting diode by utilizing the fact that the electric charge injected by the forward voltage application recombines with the opposite electric charge in the bulk and emits light.
【0021】[0021]
【実施例】本発明の有機整流素子について、その製造方
法とその性能を多数の実験を行ったが、その中より抽出
した代表例によって説明する。なお、本発明は以下の実
施例にのみ限定して解釈されるものではないのは勿論で
あり、本発明の趣旨と精神を逸脱せざるかぎり任意に実
施態様を変更して実施できることは当然である。EXAMPLES Regarding the organic rectifying device of the present invention, a number of experiments were conducted on its manufacturing method and its performance, and a typical example extracted from them will be described. The present invention should not be construed as being limited to the following examples, and it goes without saying that the embodiments can be arbitrarily modified and implemented without departing from the spirit and spirit of the present invention. is there.
【0022】実施例1 まず、ガラス基板上に金電極をスパッタ法で蒸着し、そ
の上に電解酸化重合によってポリ-3-メチルチオフェン
(以下、PMeTと略称する)を製膜した。次いで、このPM
eT膜を電機化学的に脱ドーピング処理した後に、5-メチ
ル-10-(p-メチルベンジル)-5,10-ジヒドロフェナジン膜
(以下MMDPと略称する)を真空蒸着法により積層した。
最後に、その上にアルミニウムを真空蒸着して、Au/PM
eT/MMDP/Alなる構造のサンドイッチセルを製作した。Example 1 First, a gold electrode was vapor-deposited on a glass substrate by a sputtering method, and poly-3-methylthiophene (hereinafter abbreviated as PMeT) was formed thereon by electrolytic oxidation polymerization. Then this PM
After electro-chemically dedoping the eT film, a 5-methyl-10- (p-methylbenzyl) -5,10-dihydrophenazine film (hereinafter abbreviated as MMDP) was laminated by a vacuum deposition method.
Finally, vacuum-deposit aluminum on top of it and add Au / PM
A sandwich cell with a structure of eT / MMDP / Al was manufactured.
【0023】このサンドイッチセルに暗黒下で連続的に
直流印加電圧を変化させながら印加して、電流−電圧曲
線を調べた。図2および図3は、連続的に直流印加電圧
を変化させた場合の電流変化を示すグラフである。その
結果、金電極側に正の電圧を印加した時が順方向となる
安定した整流作用があることが確認された。金電極に+
4Vの電圧を印加した時の電流値は+14.0mA、−4Vの電圧
を印加した時の電流値は−0.117μAで整流比120000であ
った(図2参照)。また、±2Vの印加電圧においてはそ
れぞれ+1.05mAおよび-0.058μAの電流値で整流比18000
であった(図3参照)。A current-voltage curve was examined by continuously applying a DC voltage to the sandwich cell while changing the DC voltage in the dark. 2 and 3 are graphs showing current changes when the DC applied voltage is continuously changed. As a result, it was confirmed that there was a stable rectifying action in which the forward direction was when a positive voltage was applied to the gold electrode side. For gold electrode +
The current value when a voltage of 4 V was applied was +14.0 mA, the current value when a voltage of -4 V was applied was -0.117 μA, and the rectification ratio was 120,000 (see Fig. 2). At an applied voltage of ± 2 V, the rectification ratio is 18000 at current values of +1.05 mA and -0.058 μA, respectively.
Was (see FIG. 3).
【0024】次に、この素子に光を照射した時、金電極
側が正となる方向に光起電力を生じた。この時、照射す
る光の波長を変えた場合の光電流の変化を測定した。図
4は光波長−光電流の関係を示すアクションスペクトル
のグラフである。このグラフから、金電極側から光照射
した場合(●)、PMeTの吸収極大のところで光電流値が
極小となることからPMeTによるフィルター効果を示し、
活性面が金電極とPMeT層の界面ではなくPMeT層の奥であ
ることがわかる。また、アルミニウム電極側から光照射
した場合(○)、MMDPの吸収の裾付近に光電流値が極大
となることからMMDPによるフィルター効果を示し、主た
る活性面がMMDP層の奥、つまりPMeTとMMDPとの界面であ
ることがわかる。なお、MMDPのみを金電極とアルミニウ
ムでサンドイッチした単層型素子が二層型素子と同方向
に整流作用および光電変換作用をすることから、アルミ
ニウムとMMDPとの界面も活性面として機能していること
がわかる。Next, when this element was irradiated with light, a photoelectromotive force was generated in the direction in which the gold electrode side was positive. At this time, the change in photocurrent when the wavelength of the irradiation light was changed was measured. FIG. 4 is a graph of an action spectrum showing the relationship between light wavelength and photocurrent. From this graph, when light is irradiated from the gold electrode side (●), the photocurrent value becomes the minimum at the absorption maximum of PMeT, so the filter effect by PMeT is shown,
It can be seen that the active surface is at the back of the PMeT layer, not at the interface between the gold electrode and the PMeT layer. In addition, when the light is irradiated from the aluminum electrode side (○), the photocurrent value becomes maximum near the absorption skirt of the MMDP, which shows the filter effect by the MMDP. The main active surface is the back of the MMDP layer, that is, PMeT and MMDP. It can be seen that this is the interface with. Since the single-layer element in which only MMDP is sandwiched between the gold electrode and aluminum has a rectifying action and a photoelectric conversion action in the same direction as the two-layer element, the interface between aluminum and MMDP also functions as an active surface. I understand.
【0025】実施例2 実施例1においてMMDPの代わりに5-メチル-10-(p-メト
キシベンジル)-5,10-ジヒドロフェナジン(以下、MMODP
と略称する)、5-メチル-10-(p-シアノベンジル)-5,10-
ジヒドロフェナジン(以下、MCDPと略称する)、または
5-メチル-10-(m-ジニトロベンジル)-5,10-ジヒドロフェ
ナジン(以下、MDNDPと略称する)を用いて、同様のサ
ンドイッチセルを製作した。これらのサンドイッチセル
に暗黒下で連続的に直流印加電圧を変化させながら印加
すると、図2に類似した電流変化を示し、同様の整流作
用があることが確認された。整流比は、MMODPを用いた
素子で、12000(±2v)、MCDPを用いた素子で10000
(±4v)、およびMDNDPを用いた素子で1200(±4v)
であり、いずれも優れた整流作用を有することがわかっ
た。Example 2 Instead of MMDP in Example 1, 5-methyl-10- (p-methoxybenzyl) -5,10-dihydrophenazine (hereinafter referred to as MMODP
Abbreviated), 5-methyl-10- (p-cyanobenzyl) -5,10-
Dihydrophenazine (hereinafter abbreviated as MCDP), or
A similar sandwich cell was prepared using 5-methyl-10- (m-dinitrobenzyl) -5,10-dihydrophenazine (hereinafter abbreviated as MDNDP). It was confirmed that when these sandwich cells were applied in the dark while continuously changing the DC applied voltage, a current change similar to that shown in FIG. The rectification ratio is 12000 (± 2v) for the element using MMODP and 10000 for the element using MCDP.
(± 4v), and 1200 (± 4v) with the device using MDNDP
It was found that all have excellent rectifying action.
【0026】実施例3 実施例1においてPMeT層の代わりに、他の高分子導電体
材料層を用いた物合にも顕著な整流作用が認められた。
その層材料の名称と整流比(±2V)は次のとおりであっ
た。すなわち、ポリピロール(整流比16000)、ポリ-3,
4-ジメチルピロール(整流比18000)、ポリp-フェニレ
ン(整流比15000)、ポリチオフェン(整流比1200)、
ポリアセチレン(整流比1000)、ポリシアノアセチレン
(整流比2000)、ポリビニルカルバゾール(整流比100
0)、熱分解ポリイミド(整流比8000)、熱分解ポリア
クリロニトリル(整流比5000)、グラファイト(整流比
6000)である。また、同様にして金属系材料を用いた場
合は、インジウム(整流比12000)、アルミニウム・マ
グネシウム(整流比15000)、塩化亜鉛ドーピング酸化
アルミニウム(整流比4000)、五塩化アンチモンドーピ
ング酸化錫(整流比14000)、導電性硫化銅(整流比100
00)という結果が得られた。Example 3 In Example 1, a remarkable rectifying effect was observed in the case of using another polymer conductive material layer instead of the PMeT layer.
The name of the layer material and the rectification ratio (± 2V) were as follows. That is, polypyrrole (rectification ratio 16000), poly-3,
4-dimethylpyrrole (rectification ratio 18000), poly p-phenylene (rectification ratio 15000), polythiophene (rectification ratio 1200),
Polyacetylene (rectification ratio 1000), polycyanoacetylene (rectification ratio 2000), polyvinylcarbazole (rectification ratio 100)
0), pyrolysis polyimide (rectification ratio 8000), pyrolysis polyacrylonitrile (rectification ratio 5000), graphite (rectification ratio)
6000). Similarly, when a metal material is used, indium (rectification ratio 12000), aluminum / magnesium (rectification ratio 15000), zinc chloride-doped aluminum oxide (rectification ratio 4000), antimony pentachloride-doped tin oxide (rectification ratio) 14000), conductive copper sulfide (rectification ratio 100
00) was obtained.
【0027】[0027]
【発明の効果】本発明の有機整流素子は、高分子導電体
材料層とフェナジン膜との界面バリヤーとフェナジン膜
とたとえば金属系材料層との界面バリヤーの両方を用い
て、効率よく整流を行なうので、従来公知の有機整流素
子よりもはるかに優れた整流比を与える素子を作ること
が可能となった。また、このバリヤーを用いて光電荷分
離が行なわれ、その結果、分離した電子と正孔が互いに
反対方向に輸送されるので光電変換素子としても機能す
る。さらに、電圧印加によって注入された電荷がバリヤ
ーの電位勾配に沿ってバルク中を移動する間に反対電荷
と再結合して発光することを利用して、電界発光素子と
しても機能する。したがって本発明の産業界における応
用の優位性は絶大な物であると確信される。The organic rectifying device of the present invention efficiently rectifies by using both the interface barrier between the polymer conductor material layer and the phenazine film and the interface barrier between the phenazine film and the metal-based material layer. Therefore, it has become possible to manufacture an element that gives a rectification ratio far superior to that of a conventionally known organic rectification element. Photoelectric charge separation is performed using this barrier, and as a result, the separated electrons and holes are transported in opposite directions, so that they also function as a photoelectric conversion element. Further, it also functions as an electroluminescence device by utilizing the fact that the charges injected by the voltage application recombine with the opposite charges to emit light while moving in the bulk along the potential gradient of the barrier. Therefore, it is believed that the superiority of the application of the present invention in industry is enormous.
【図面の簡単な説明】[Brief description of drawings]
【図1】本発明の有機整流素子の一実施例を示す断面図
である。FIG. 1 is a cross-sectional view showing an example of an organic rectifying device of the present invention.
【図2】本発明の有機整流素子の電流−電圧特性を示す
グラフである。FIG. 2 is a graph showing current-voltage characteristics of the organic rectifier of the present invention.
【図3】本発明の有機整流素子の電流−電圧特性を示す
グラフである。FIG. 3 is a graph showing current-voltage characteristics of the organic rectifier of the present invention.
【図4】本発明の有機整流素子の光電流作用スペクトル
とPMeTおよびMMDPの吸収スペクトルを示すグラフであ
る。FIG. 4 is a graph showing a photocurrent action spectrum and an absorption spectrum of PMeT and MMDP of the organic rectifier of the present invention.
1 基板 2 電極 3 高分子導電体層 4 フェナジン膜 5 電極 1 substrate 2 electrode 3 polymer conductor layer 4 phenazine film 5 electrode
Claims (3)
または核置換アラルキル)-5,10-ジヒドロフェナジン膜
と高分子導電体材料層または金属系材料層とが積層され
ていることを特徴とする有機整流素子。1. A 5- (electron-donating group) -substituted-10- (aralkyl or nucleus-substituted aralkyl) -5,10-dihydrophenazine film and a polymer conductor material layer or a metal-based material layer are laminated. An organic rectifying device characterized by the above.
料、有機熱分解系材料および炭素系材料よりなる群から
選ばれた少なくとも一つの高分子導電体材料からなる層
である請求項1記載の有機整流素子。2. The polymer conductor material layer is a layer made of at least one polymer conductor material selected from the group consisting of organic synthetic materials, organic pyrolysis materials and carbon materials. The organic rectifying element described.
物、金属硫化物および合金酸化物よりなる群から選ばれ
た少なくとも一つの金属系材料からなる層である請求項
1記載の有機整流素子。3. The organic material according to claim 1, wherein the metal-based material layer is a layer made of at least one metal-based material selected from the group consisting of metals, alloys, metal oxides, metal sulfides and alloy oxides. Rectifying element.
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Applications Claiming Priority (1)
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JP8999392A JP3150750B2 (en) | 1992-03-13 | 1992-03-13 | Organic rectifier |
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JPH05259434A true JPH05259434A (en) | 1993-10-08 |
JP3150750B2 JP3150750B2 (en) | 2001-03-26 |
Family
ID=13986147
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