JPH05251674A - Solid-state image sensor and manufacture thereof - Google Patents
Solid-state image sensor and manufacture thereofInfo
- Publication number
- JPH05251674A JPH05251674A JP4047390A JP4739092A JPH05251674A JP H05251674 A JPH05251674 A JP H05251674A JP 4047390 A JP4047390 A JP 4047390A JP 4739092 A JP4739092 A JP 4739092A JP H05251674 A JPH05251674 A JP H05251674A
- Authority
- JP
- Japan
- Prior art keywords
- film
- forming
- solid
- color filter
- flattening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 229920006243 acrylic copolymer Polymers 0.000 claims abstract description 13
- 230000001681 protective effect Effects 0.000 claims abstract description 10
- 229920005989 resin Polymers 0.000 claims description 13
- 239000011347 resin Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000003384 imaging method Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 4
- 230000035945 sensitivity Effects 0.000 abstract description 9
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 abstract description 2
- 239000007787 solid Substances 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Color Television Image Signal Generators (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、固体撮像装置及びそ
の製造方法に関し、特に、オンチップカラーフィルタの
平坦化膜の改良に係わる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device and a method of manufacturing the same, and more particularly to improvement of a flattening film for an on-chip color filter.
【０００２】[0002]
【従来の技術】現在の固体撮像装置においては、直接Ｃ
ＣＤデバイス上にカラーフィルタを形成する構造である
が、デバイス表面の段差（１．５μｍ程度ある）を是正
するために平坦化膜を形成している。図５は、固体撮像
装置の要部断面図を示したものである。同図中、１はシ
リコン基板であり、この基板１にｐウエル１ａ及びｎ＋
拡散領域１ｂが形成されている。また、シリコン基板１
の表面には、各種絶縁膜４，５，６を介して第１ポリシ
リコン層２及び第２ポリシリコン層３が形成されてい
る。また、絶縁膜６上には、ＣＣＤデバイスのセンサ部
のみを開口させるＡｌ遮光膜７がパターニングされ、そ
の上にデバイス保護膜としてプラズマＣＶＤ法にてＰ−
ＳｉＯ２膜８が約５０００Åの膜厚に形成されている。
このようなデバイス構造においては、上記したように、
その表面の段差（高低差）が１．５μｍ程度ある。そこ
で、図５に示すように、Ｐ−ＳｉＯ2膜８上に透明な樹
脂を用いてコーティング法による平坦化膜９を表面平坦
度がある程度得られる３〜３．５μｍの膜厚に形成した
後、例えば各画素に応じてマゼンダ層１０ａ，シアン層
１０ｂ，イエロー層１０ｃ等のカラーフィルタを形成す
る。なお、グリーン層となるフィルタは、シアン層１０
ｂとイエロー層１０ｃを積み重ねて作るため、その厚さ
は３μｍの膜厚となるが、所望の特性とするためにはそ
の薄膜化は困難である。2. Description of the Related Art In current solid-state image pickup devices, direct C
Although the structure is such that a color filter is formed on a CD device, a flattening film is formed in order to correct a step (about 1.5 μm) on the device surface. FIG. 5 shows a cross-sectional view of a main part of the solid-state imaging device. In the figure, reference numeral 1 denotes a silicon substrate, on which the p-wells 1a and n + are provided.
The diffusion region 1b is formed. Also, the silicon substrate 1
A first polysilicon layer 2 and a second polysilicon layer 3 are formed on the surface of the via the various insulating films 4, 5, and 6. Further, an Al light-shielding film 7 for opening only the sensor part of the CCD device is patterned on the insulating film 6, and a P-type P-type film is formed on the insulating film 6 as a device protection film by plasma CVD.
The SiO 2 film 8 is formed to a film thickness of about 5000Å.
In such a device structure, as described above,
The step (height difference) on the surface is about 1.5 μm. Therefore, as shown in FIG. 5, after the flattening film 9 is formed on the P-SiO 2 film 8 by a coating method by a coating method to have a film thickness of 3 to 3.5 μm so that the surface flatness can be obtained to some extent. For example, color filters such as a magenta layer 10a, a cyan layer 10b, and a yellow layer 10c are formed according to each pixel. The filter that becomes the green layer is the cyan layer 10
Since b and the yellow layer 10c are stacked and formed, the thickness is 3 μm, but it is difficult to reduce the thickness to obtain desired characteristics.
【０００３】次に、フィルタ層の上に、ドライエッチン
グ耐性を有する透明樹脂でなる保護膜１１を形成する。
この保護膜１１には、オンチップレンズ１１ａ〜１１ａ
を各画素毎に一体に形成して固体撮像装置の製造が終了
する。Next, a protective film 11 made of a transparent resin having a dry etching resistance is formed on the filter layer.
The protective film 11 includes on-chip lenses 11a to 11a.
Is integrally formed for each pixel, and the manufacturing of the solid-state imaging device is completed.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、近年は
ＣＣＤデバイスの微細化が進み、横方向の縮小化により
１／３インチあるいは１／４インチのデバイスが設計さ
れており、縦方向の縮小（膜厚縮小）化を行わないと、
図５に示すように、オンチップレンズ（マイクロレン
ズ）１１ａ利用による開放端での感度向上効果が得られ
なくなる問題がある。即ち、最近のＣＣＤデバイスは、
センサ部の実効開口率を向上する目的でオンチップレン
ズを搭載しているため、ユニットセル寸法が小さなデバ
イスに対して、光の集光率、及び感度のＦ値依存を考慮
すると、センサ開口部からオンチップレンズまでの高さ
が現状の高さ８μｍより低いところに最適値があるとい
う結果がシミュレーションその他で確認されている。そ
のため、センサ開口部からオンチップレンズまでの高さ
を低くする方法として平坦化膜の薄膜化が考えられる
が、上記したように、現状の材料を用いてのコーティン
グ法による平坦化膜の薄膜化は困難である。特に、従来
の平坦化膜は熱硬化型の樹脂が用いられるため、十分な
流動性は期待できず薄膜化は至難であった。However, in recent years, miniaturization of CCD devices has progressed, and 1/3 inch or 1/4 inch devices have been designed by the reduction in the lateral direction. If you do not reduce the thickness)
As shown in FIG. 5, there is a problem that the sensitivity improving effect at the open end cannot be obtained by using the on-chip lens (microlens) 11a. That is, recent CCD devices
Since an on-chip lens is mounted for the purpose of improving the effective aperture ratio of the sensor unit, considering the light collection ratio and the F-number dependence of the sensitivity for a device with a small unit cell size, the sensor aperture unit It has been confirmed by simulation and the like that the optimum value is at a position where the height from to the on-chip lens is lower than the current height of 8 μm. Therefore, thinning of the flattening film is considered as a method of reducing the height from the sensor opening to the on-chip lens. However, as described above, the thinning of the flattening film by the coating method using the current material is performed. It is difficult. In particular, since thermosetting resin is used for the conventional flattening film, sufficient fluidity cannot be expected, and it has been difficult to reduce the film thickness.
【０００５】本発明は、このような従来の問題点に着目
して創案されたものであって、平坦化膜を薄膜化可能と
なし、感度の向上、並びに、Ｆ値が小さい場合の感度低
下が少ない固体撮像装置を得んとするものである。The present invention was devised in view of the above-mentioned conventional problems. The flattening film can be made thin, the sensitivity is improved, and the sensitivity is lowered when the F value is small. The object is to obtain a solid-state image pickup device having a small number of pixels.
【０００６】[0006]
【課題を解決するための手段】そこで、本発明は、遮光
膜に形成した開口より光学的に露呈するセンサ部を有
し、全面に形成される平坦化膜を介してカラーフィルタ
が配設され、該カラーフィルタ上方にオンチップレンズ
が形成されてなる固体撮像装置において、前記平坦化膜
がアクリル系共重合体の樹脂をコーティング処理及びリ
フロー処理した膜で成ることを、その解決手段としてい
る。In view of the above, the present invention has a sensor portion that is optically exposed through an opening formed in a light-shielding film, and a color filter is provided through a flattening film formed over the entire surface. In a solid-state imaging device in which an on-chip lens is formed above the color filter, the flattening film is a film obtained by coating and reflowing an acrylic copolymer resin as a solution.
【０００７】また、シリコン基板にセンサ部を形成する
工程と、前記シリコン基板上に絶縁膜を介して転送電極
を形成する工程と、前記センサ部のみで開口する遮光膜
を形成する工程と、次いで、全面にデバイス保護膜を形
成する工程と、前記デバイス保護膜上にアクリル系共重
合体樹脂をコーティングする工程と、前記アクリル系共
重合体樹脂を１２０℃前後の温度でリフローさせた後、
２００℃前後の温度でベークして平坦化層を形成する工
程と、前記平坦化層上に各種カラーフィルタ層を形成す
る工程と、前記カラーフィルタ層上方にオンチップレン
ズを形成する工程と、を備えることを、その解決方法と
している。Further, a step of forming a sensor portion on a silicon substrate, a step of forming a transfer electrode on the silicon substrate via an insulating film, a step of forming a light shielding film which is opened only in the sensor portion, After forming a device protective film on the entire surface, coating an acrylic copolymer resin on the device protective film, and reflowing the acrylic copolymer resin at a temperature of about 120 ° C.,
A step of forming a flattening layer by baking at a temperature of about 200 ° C., a step of forming various color filter layers on the flattening layer, and a step of forming an on-chip lens above the color filter layer. Preparing is the solution.
【０００８】[0008]
【作用】アクリル系共重合体樹脂をコーティング後、１
２０℃前後の温度でリフローさせることにより、該樹脂
膜の表面は平坦化する。このため、該樹脂膜の膜厚は小
さくとも平坦性が得られるため、固体撮像装置のオンチ
ップレンズからセンサ部までの距離を縮めて、光の集光
率及び感度の向上が可能となる。Function: After coating acrylic copolymer resin, 1
By reflowing at a temperature of about 20 ° C., the surface of the resin film is flattened. Therefore, flatness can be obtained even if the film thickness of the resin film is small, so that the distance from the on-chip lens of the solid-state imaging device to the sensor unit can be shortened, and the light condensing rate and sensitivity can be improved.
【０００９】[0009]
【実施例】以下、本発明に係る固体撮像装置及びその製
造方法の詳細を図面に示す実施例に基づいて説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The details of a solid-state image pickup device and a method of manufacturing the same according to the present invention will be described below based on the embodiments shown in the drawings.
【００１０】本発明においては、平坦化層をアクリル系
共重合体樹脂で形成する。このアクリル系共重合体は、
熱可塑性樹脂であり、良好な平坦性を有し、硬化後は十
分な耐溶剤性，耐熱変形性を有する。以下にアクリル系
共重合体の基本性能を表１に示す。In the present invention, the flattening layer is formed of an acrylic copolymer resin. This acrylic copolymer is
It is a thermoplastic resin, has good flatness, and has sufficient solvent resistance and heat distortion resistance after curing. The basic performance of the acrylic copolymer is shown in Table 1 below.
【００１１】[0011]
【表１】 [Table 1]
【００１２】図１〜図４は、本実施例の各製造工程を示
す要部断面図である。以下、図に基づいて固体撮像装置
の製造工程を説明する。なお、図５に示す従来例と同一
部分には同一の符号を用いて説明を省略する。1 to 4 are cross-sectional views of essential parts showing the respective manufacturing steps of this embodiment. The manufacturing process of the solid-state imaging device will be described below with reference to the drawings. Incidentally, the same parts as those of the conventional example shown in FIG.
【００１３】先ず、図１に示すように、シリコン基板１
にｐウエル１ａ及びｎ+拡散領域１ｂを形成する。次
に、シリコン基板１の表面には、各種絶縁膜４，５，６
を介して第１ポリシリコン層２及び第２ポリシリコン層
３を形成し、絶縁膜６上には、ＣＣＤデバイスのセンサ
部Ａのみを開口させるＡｌ遮光膜７がパターニングし、
その上にデバイス保護膜としてプラズマＣＶＤ法にてＰ
−ＳｉＯ2膜８を約５０００Åの膜厚に形成する。この
ようなデバイス構造においては、上記したように、その
表面の段差（高低差）が１．５μｍ程度ある。次に、図
１に示すように、Ｐ−ＳｉＯ2膜８上に、アクリル系共
重合体（ジグライム溶液／対固形分３０ｗｔ％）をコー
ティングして平坦化膜２０とする。このコーティング法
は、スピナーにて、初期回転数５００ｒｐｍ／２秒、次
に１０００ｒｐｍ／６０秒の回転塗布を行ない初期膜厚
２．０μｍとした。この状態で平坦化膜２０の高さのム
ラは０．３〜０．５μｍ存在する。First, as shown in FIG. 1, a silicon substrate 1
Then, a p-well 1a and an n + diffusion region 1b are formed. Next, various insulating films 4, 5, 6 are formed on the surface of the silicon substrate 1.
To form a first polysilicon layer 2 and a second polysilicon layer 3 on the insulating film 6, and an Al light shielding film 7 for opening only the sensor portion A of the CCD device is patterned on the insulating film 6.
On top of that, P is formed as a device protective film by the plasma CVD method.
The -SiO 2 film 8 is formed to a film thickness of about 5000Å. In such a device structure, as described above, the surface step (height difference) is about 1.5 μm. Next, as shown in FIG. 1, the P-SiO 2 film 8 is coated with an acrylic copolymer (diglyme solution / based on solid content 30 wt%) to form a flattening film 20. In this coating method, spin coating was performed with a spinner at an initial rotation speed of 500 rpm / 2 seconds and then at 1000 rpm / 60 seconds to give an initial film thickness of 2.0 μm. In this state, the unevenness of the height of the flattening film 20 is 0.3 to 0.5 μm.
【００１４】次に、図２に示すように、１２０°前後で
５分間ホットプレート上でプレベークを行ない、平坦化
膜２０をリフローさせる。このリフロー処理により、平
坦化膜２０の表面は、上記したムラが解消して図３に示
すように平坦面となる。次いで、２００℃前後の温度で
ベークして平坦化膜２０を硬化させる。Next, as shown in FIG. 2, prebaking is performed on a hot plate at about 120 ° for 5 minutes to reflow the flattening film 20. By this reflow process, the surface of the flattening film 20 becomes a flat surface as shown in FIG. Then, the flattening film 20 is cured by baking at a temperature of about 200 ° C.
【００１５】その後は、図４に示すように、従来と同様
の方法によりカラーフィルタ層１０ａ，１０ｂ，１０ｃ
及びその上に保護膜１１を形成し、保護膜１１表面には
オンチップレンズ１１ａを加工する。After that, as shown in FIG. 4, the color filter layers 10a, 10b, 10c are formed by the same method as the conventional method.
And the protective film 11 is formed thereon, and the on-chip lens 11a is processed on the surface of the protective film 11.
【００１６】このようにして製造された固体撮像装置
は、平坦化膜２０が２．０μｍ以下の厚さに薄くできる
ため、オンチップレンズ１１ａとセンサ部Ａとの距離を
縮めることが可能となり、集光率及び感度が向上する。In the solid-state image pickup device thus manufactured, the flattening film 20 can be thinned to a thickness of 2.0 μm or less, so that the distance between the on-chip lens 11a and the sensor section A can be shortened. The light collection rate and sensitivity are improved.
【００１７】以上、実施例について説明したが、本発明
においては平坦化膜を形成するアクリル系共重合樹脂を
主材として、その溶剤を変更することも可能であり、ま
た、コーティングに際し、そのスピナー回転数等を変え
ることによりその設定膜厚を制御することが可能であ
る。Although the embodiments have been described above, in the present invention, it is possible to change the solvent of the acrylic copolymer resin for forming the flattening film as the main material, and the spinner for the coating. It is possible to control the set film thickness by changing the rotation speed and the like.
【００１８】[0018]
【発明の効果】以上の説明から明らかなように、本発明
によれば、ＣＣＤオンチップカラーフィルタの平坦化膜
を薄膜化（実デバイス上で２μｍ以下）することによ
り、センサ部からオンチップレンズまでの高さを低く抑
えることができ、このため、感度が向上し、また、Ｆ値
が小さい場合の感度低下を小さくする効果がある。As is apparent from the above description, according to the present invention, by thinning the flattening film of the CCD on-chip color filter (2 μm or less on an actual device), the on-chip lens from the sensor section is reduced. The height can be suppressed to a low level, and therefore, the sensitivity is improved, and the decrease in sensitivity when the F value is small is reduced.
【００１９】また、平坦化膜の平坦度が増すため、カラ
ーフィルタ層の形成時にコーティングのムラが発生しに
くくなる効果がある。Further, since the flatness of the flattening film is increased, there is an effect that unevenness of coating is less likely to occur when the color filter layer is formed.
【図１】本発明の実施例の製造工程を示す要部断面図。FIG. 1 is a sectional view of an essential part showing the manufacturing process of an embodiment of the present invention.
【図２】本発明の実施例の製造工程を示す要部断面図。FIG. 2 is a sectional view of a main part showing the manufacturing process of the embodiment of the present invention.
【図３】本発明の実施例の製造工程を示す要部断面図。FIG. 3 is a cross-sectional view of a main part showing the manufacturing process of the embodiment of the present invention.
【図４】本発明の実施例の製造工程を示す要部断面図。FIG. 4 is a sectional view of an essential part showing the manufacturing process of the embodiment of the present invention.
【図５】従来例の要部断面図。FIG. 5 is a sectional view of a main part of a conventional example.
Ａ…センサ部、１…シリコン基板、７…Ａｌ遮光膜、８
…Ｐ−ＳｉＯ2膜、１１ａ…オンチップレンズ、２０…
平坦化膜。A ... Sensor part, 1 ... Silicon substrate, 7 ... Al light-shielding film, 8
... P-SiO 2 film, 11a ... on-chip lens, 20 ...
Planarization film.
Claims (2)
するセンサ部を有し、全面に形成される平坦化膜を介し
てカラーフィルタが配設され、該カラーフィルタ上方に
オンチップレンズが形成されてなる固体撮像装置におい
て、 前記平坦化膜がアクリル系共重合体の樹脂をコーティン
グ処理及びリフロー処理した膜で成ることを特徴とする
固体撮像装置。1. A color filter is provided with a sensor portion optically exposed through an opening formed in a light-shielding film, a flattening film formed over the entire surface, and an on-chip lens is provided above the color filter. The formed solid-state imaging device, wherein the flattening film is a film obtained by coating and reflowing an acrylic copolymer resin.
と、 前記シリコン基板上に絶縁膜を介して転送電極を形成す
る工程と、 前記センサ部のみで開口する遮光膜を形成する工程と、 次いで、全面にデバイス保護膜を形成する工程と、 前記デバイス保護膜上にアクリル系共重合体樹脂をコー
ティングする工程と、 前記アクリル系共重合体樹脂を１２０℃前後の温度でリ
フローさせた後、２００℃前後の温度でベークして平坦
化層を形成する工程と、 前記平坦化層上に各種カラーフィルタ層を形成する工程
と、 前記カラーフィルタ層上方にオンチップレンズを形成す
る工程と、を備えることを特徴とする固体撮像装置の製
造方法。2. A step of forming a sensor portion on a silicon substrate, a step of forming a transfer electrode on the silicon substrate via an insulating film, a step of forming a light-shielding film having an opening only at the sensor portion, A step of forming a device protective film on the entire surface, a step of coating the device protective film with an acrylic copolymer resin, and a step of reflowing the acrylic copolymer resin at a temperature of about 120 ° C. And a step of forming a flattening layer by baking at a temperature of around 0 ° C., a step of forming various color filter layers on the flattening layer, and a step of forming an on-chip lens above the color filter layer. A method for manufacturing a solid-state imaging device, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04739092A JP3318947B2 (en) | 1992-03-05 | 1992-03-05 | Method for manufacturing solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04739092A JP3318947B2 (en) | 1992-03-05 | 1992-03-05 | Method for manufacturing solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05251674A true JPH05251674A (en) | 1993-09-28 |
| JP3318947B2 JP3318947B2 (en) | 2002-08-26 |
Family
ID=12773785
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP04739092A Expired - Fee Related JP3318947B2 (en) | 1992-03-05 | 1992-03-05 | Method for manufacturing solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3318947B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0741418A3 (en) * | 1995-05-02 | 1998-06-03 | Matsushita Electronics Corporation | Solid state imaging device and production method for the same |
| JP2003046874A (en) * | 2001-08-01 | 2003-02-14 | Toppan Printing Co Ltd | Method for manufacturing solid-state imaging device |
| JP2016076682A (en) * | 2014-10-06 | 2016-05-12 | 采▲ぎょく▼科技股▲ふん▼有限公司ＶｉｓＥｒａ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏｍｐａｎｙ Ｌｉｍｉｔｅｄ | Image sensor and formation method thereof |
-
1992
- 1992-03-05 JP JP04739092A patent/JP3318947B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0741418A3 (en) * | 1995-05-02 | 1998-06-03 | Matsushita Electronics Corporation | Solid state imaging device and production method for the same |
| US5976907A (en) * | 1995-05-02 | 1999-11-02 | Matsushita Electronics Corporation | Solid state imaging device and production method for the same |
| JP2003046874A (en) * | 2001-08-01 | 2003-02-14 | Toppan Printing Co Ltd | Method for manufacturing solid-state imaging device |
| JP2016076682A (en) * | 2014-10-06 | 2016-05-12 | 采▲ぎょく▼科技股▲ふん▼有限公司ＶｉｓＥｒａ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏｍｐａｎｙ Ｌｉｍｉｔｅｄ | Image sensor and formation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3318947B2 (en) | 2002-08-26 |
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