JPH05243463A - Plastic molded type semiconductor device - Google Patents
Plastic molded type semiconductor deviceInfo
- Publication number
- JPH05243463A JPH05243463A JP4044547A JP4454792A JPH05243463A JP H05243463 A JPH05243463 A JP H05243463A JP 4044547 A JP4044547 A JP 4044547A JP 4454792 A JP4454792 A JP 4454792A JP H05243463 A JPH05243463 A JP H05243463A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor device
- sealing resin
- leads
- external connection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 239000011347 resin Substances 0.000 claims abstract description 30
- 229920005989 resin Polymers 0.000 claims abstract description 30
- 238000007789 sealing Methods 0.000 claims abstract description 25
- 239000000853 adhesive Substances 0.000 abstract description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- 229910000679 solder Inorganic materials 0.000 description 9
- 238000010586 diagram Methods 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、樹脂封止型半導体装
置の改良に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to improvement of a resin-sealed semiconductor device.
【０００２】[0002]
【従来の技術】従来、半導体集積回路を樹脂封止して成
る樹脂封止型半導体装置は図６および図７に示すような
構造を有している。但し、図６はその断面図であり、図
７はその表面実装状態を示す図である。図６において、
ダイパッド２２上にＡg(銀)ペースト等の接着剤２３で
半導体集積回路２１が接着されて搭載され、その半導体
集積回路２１の電極２４と外部接続用リード２６がＡu
(金)ワイヤ２５で結線されている。そして、要部がエポ
キシ系の封止用樹脂２７で封止されて機械的強度および
耐湿性等の信頼性が確保されている。2. Description of the Related Art Conventionally, a resin-sealed semiconductor device obtained by sealing a semiconductor integrated circuit with a resin has a structure as shown in FIGS. However, FIG. 6 is a cross-sectional view thereof, and FIG. 7 is a view showing its surface mounting state. In FIG.
The semiconductor integrated circuit 21 is mounted on the die pad 22 with an adhesive 23 such as Ag (silver) paste, and the electrodes 24 of the semiconductor integrated circuit 21 and the external connection leads 26 are Au.
It is connected by a (gold) wire 25. The main part is sealed with an epoxy-based sealing resin 27 to ensure reliability such as mechanical strength and moisture resistance.
【０００３】上記外部接続用リード２６は封止用樹脂２
７の側端から水平方向に突出して延在しており、その突
出部は回路基板２８に接続される際の適切な形にフォー
ミングされている。The lead 26 for external connection is made of resin 2 for sealing.
7 extends in a horizontal direction from the side edge of the protrusion 7, and the protrusion is formed into an appropriate shape when connected to the circuit board 28.
【０００４】このようにして形成された樹脂封止型半導
体装置２０は、図７に示すように、接続されるべき回路
基板２８上における所定の電極２９に接続される。その
場合に、通常は上記電極２９をハンダ処理した後に半田
リフローによって半田３０を介して接続される。これを
一般に表面実装技術という。The resin-sealed semiconductor device 20 thus formed is connected to a predetermined electrode 29 on the circuit board 28 to be connected, as shown in FIG. In that case, usually, the electrodes 29 are soldered and then connected through solder 30 by solder reflow. This is generally called surface mounting technology.
【０００５】[0005]
【発明が解決しようとする課題】上述のように、上記従
来の樹脂封止型半導体装置２０における外部接続用リー
ド２６は封止用樹脂２７の側端から水平方向に向かって
延在している。したがって、この外部接続用リード２６
が接続されるべき回路基板２８上の電極２９は、回路基
板２８上における樹脂封止型半導体装置２０の投影面
(すなわち、封止用樹脂２７の投影面)の外側に配設する
必要がある。As described above, the external connection lead 26 in the conventional resin-encapsulated semiconductor device 20 extends in the horizontal direction from the side end of the encapsulation resin 27. .. Therefore, this external connection lead 26
The electrode 29 on the circuit board 28 to be connected to is the projection surface of the resin-sealed semiconductor device 20 on the circuit board 28.
It is necessary to dispose it outside (that is, the projection surface of the sealing resin 27).
【０００６】しがって、上記従来の樹脂封止型半導体装
置２０を用いた表面実装技術では、回路基板に対する電
子部品の実装密度を高密度化したいという要求に応ずる
ことができないという問題がある。Therefore, the surface mounting technique using the conventional resin-encapsulated semiconductor device 20 described above has a problem in that it cannot meet the demand for higher density mounting of electronic components on a circuit board. ..
【０００７】そこで、この発明の目的は、電子部品実装
の際における高密度化を可能にする樹脂封止型半導体装
置を提供することにある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a resin-sealed semiconductor device capable of achieving high density when mounting electronic components.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するた
め、この発明の樹脂封止型半導体装置は、半導体集積回
路およびこの半導体集積回路の電極に接続された外部接
続用リードを封止用樹脂で封止して成る樹脂封止型半導
体装置であって、上記外部接続用リードは上記封止用樹
脂の底面から突出していることを特徴としている。In order to achieve the above object, a resin-sealed semiconductor device of the present invention has a resin for sealing a semiconductor integrated circuit and an external connection lead connected to an electrode of the semiconductor integrated circuit. In the resin-sealed semiconductor device, the external connection leads are projected from the bottom surface of the sealing resin.
【０００９】[0009]
【作用】封止用樹脂によって封止された半導体集積回路
の電極に接続された外部接続用リードは、上記封止用樹
脂の底面から突出して設けられている。その結果、表面
実装に際して、上記外部接続用リードは回路基板上にお
ける上記封止用樹脂の投影面内に在ることになる。した
がって、この外部接続用リードを有する樹脂封止型半導
体装置による表面実装は上記外部接続用リードに邪魔さ
れることなく高い実装密度で実施されるThe external connection lead connected to the electrode of the semiconductor integrated circuit sealed with the sealing resin is provided so as to project from the bottom surface of the sealing resin. As a result, during surface mounting, the leads for external connection are on the projection surface of the sealing resin on the circuit board. Therefore, the surface mounting by the resin-encapsulated semiconductor device having the leads for external connection is performed at a high packaging density without being disturbed by the leads for external connection.
【００１０】[0010]
【実施例】以下、この発明を図示の実施例により詳細に
説明する。図１は本実施例における樹脂封止型半導体装
置の断面図である。ダイパッド３上にＡgペースト等の
接着剤４で半導体集積回路２が接着されて搭載され、そ
の半導体集積回路２の電極５と外部接続用リード７がＡ
uワイヤ６で結線されている。そして、要部がエポキシ
系の封止用樹脂８で封止されて機械的強度および耐湿性
等の信頼性が確保されている。The present invention will be described in detail below with reference to the embodiments shown in the drawings. FIG. 1 is a sectional view of a resin-sealed semiconductor device according to this embodiment. The semiconductor integrated circuit 2 is mounted on the die pad 3 with an adhesive 4 such as Ag paste, and the electrodes 5 and external connection leads 7 of the semiconductor integrated circuit 2 are mounted on the die pad 3.
It is connected by u wire 6. The main part is sealed with an epoxy-based sealing resin 8 to ensure reliability such as mechanical strength and moisture resistance.
【００１１】上記外部接続用リード７は封止用樹脂８の
底面から垂直方向に突出して延在しており、その突出部
は回路基板に接続するために内側に折り曲げられてい
る。The external connection lead 7 extends vertically from the bottom surface of the sealing resin 8 and the projection is bent inward to connect to the circuit board.
【００１２】図２は、上記構成の樹脂封止型半導体装置
１が回路基板に表面実装された状態を示す図である。上
記樹脂封止型半導体装置１の外部接続用リード７は、ガ
ラスエポキシ等の基板にＣu(銅)配線が施された回路基
板９上の上記Ｃu配線と一体化されて外部接続用リード
７に対応する位置に配設された電極１０に接続される。
その際に、上記回路基板９上の電極１０および上記樹脂
封止型半導体装置１の外部接続用リード７のいずれか一
方あるいは両者に予め半田処理を施して、半田リフロー
することによって外部接続用リード７が電極１０に半田
１１を介して接続されるのである。FIG. 2 is a view showing a state in which the resin-encapsulated semiconductor device 1 having the above structure is surface-mounted on a circuit board. The external connection lead 7 of the resin-encapsulated semiconductor device 1 is integrated with the Cu wiring on the circuit board 9 in which Cu (copper) wiring is provided on a substrate made of glass epoxy or the like to form the external connection lead 7. The electrodes 10 are connected to the corresponding positions.
At that time, either one or both of the electrode 10 on the circuit board 9 and the external connection lead 7 of the resin-encapsulated semiconductor device 1 is preliminarily subjected to a soldering process, and reflow soldering is performed to externally connect the leads. 7 is connected to the electrode 10 via the solder 11.
【００１３】このように、本実施例における樹脂封止型
半導体装置１の外部接続用リード７は、封止用樹脂８の
底面から垂直方向に突出して内側に折り曲げられている
ために、封止用樹脂８の輪郭(すなわち、樹脂封止型半
導体装置１の輪郭)から外に出ていない。したがって、
この樹脂封止型半導体装置１の実装領域は封止用樹脂８
の投影面積と等しく、回路基板上において樹脂封止型半
導体装置１が占有する面積を従来の樹脂封止型半導体装
置よりも少なくできる。As described above, since the external connection lead 7 of the resin-sealed semiconductor device 1 in this embodiment is projected in the vertical direction from the bottom surface of the sealing resin 8 and bent inward, the sealing is performed. It does not go outside from the contour of the resin 8 for molding (that is, the contour of the resin-encapsulated semiconductor device 1). Therefore,
The mounting area of the resin-sealed semiconductor device 1 is the sealing resin 8
And the area occupied by the resin-sealed semiconductor device 1 on the circuit board can be made smaller than that of the conventional resin-sealed semiconductor device.
【００１４】すなわち、本実施例における樹脂封止型半
導体装置１によれば、回路基板のスペースに余裕ができ
るため電子部品実装の高密度化を図ることができ、電子
部品の小型化,軽量化および多機能化を推し進めて携帯
用電子機器の開発等に大いに寄与できるのである。That is, according to the resin-encapsulated semiconductor device 1 of this embodiment, the circuit board can be provided with a sufficient space, so that the mounting density of electronic components can be increased, and the electronic components can be reduced in size and weight. In addition, it is possible to make a great contribution to the development of portable electronic devices by promoting multi-functionalization.
【００１５】図３は他の実施例における樹脂封止型半導
体装置の断面図である。図３における図１と同じ部材に
は同じ番号を付して説明は省略する。本実施例における
樹脂封止型半導体装置１５の外部接続用リード１６は、
封止用樹脂８の底面から垂直方向に突出して延在してお
り、その突出部は折り曲げられることなく直線的に延在
している。このように、外部接続用リード１６の先端が
直線状に延在することによって、ちょうど突起電極のご
とく扱うことが可能である。FIG. 3 is a sectional view of a resin-sealed semiconductor device according to another embodiment. The same members as those in FIG. 1 in FIG. 3 are designated by the same reference numerals and the description thereof will be omitted. The external connection lead 16 of the resin-encapsulated semiconductor device 15 in this embodiment is
The sealing resin 8 extends vertically from the bottom surface of the sealing resin 8, and the projection extends linearly without being bent. In this way, since the tips of the external connection leads 16 extend linearly, it is possible to handle them just like protruding electrodes.
【００１６】すなわち、図４に示すように、外部接続用
リード１６の先端を半田ペースト槽１７に浸漬して半田
ペースト１８を外部接続用リード１６の先端に付着させ
ることで、一括して全外部接続用リード１６に半田処理
ができるのである。また、狭ピッチ化に対応して、外部
接続用リード１６の先端の形状は如何様にも変更可能で
ある。That is, as shown in FIG. 4, the tips of the external connection leads 16 are immersed in the solder paste tank 17 so that the solder paste 18 is attached to the tips of the external connection leads 16 so that all the external components are collectively exposed. The connection lead 16 can be soldered. In addition, the shape of the tip of the external connection lead 16 can be changed in any manner in response to the reduction in pitch.
【００１７】図５は、上記構成の樹脂封止型半導体装置
１５を、外部接続用リード１６に上述のようにして半田
を付着させて半田リフローによって回路基板９に表面実
装した状態を示す図である。上記外部接続用リード１６
が突起状態を呈することで、樹脂封止型半導体装置１５
はフリップチップ実装のように回路基板９の電極１０に
半田１１を介して接続される。FIG. 5 is a view showing a state in which the resin-sealed semiconductor device 15 having the above-described structure is surface-mounted on the circuit board 9 by soldering the external connection leads 16 with solder as described above and solder reflow. is there. External connection lead 16
The resin-encapsulated semiconductor device 15 has a protruding state.
Are connected to the electrodes 10 of the circuit board 9 via solder 11 as in flip chip mounting.
【００１８】この発明における樹脂封止型半導体装置の
外部接続用リードの形状は、上記各実施例における形状
に限定されるものではない。要は、外部接続用リードが
樹脂封止型半導体装置の封止用樹脂の底面から突出して
いればよいのである。The shape of the external connection lead of the resin-encapsulated semiconductor device according to the present invention is not limited to the shape in each of the above embodiments. The point is that the external connection lead has only to protrude from the bottom surface of the sealing resin of the resin-sealed semiconductor device.
【００１９】[0019]
【発明の効果】以上より明らかなように、この発明の樹
脂封止型半導体装置は、外部接続用リードが封止用樹脂
の底面から突出しているので、上記外部接続用リードを
上記封止用樹脂の輪郭内に配置できる。したがって、表
面実装する際における樹脂封止型半導体装置の占有面積
は上記封止用樹脂の投影面によって決まり、従来の占有
面積よりも少なくできる。したがって、この発明の樹脂
封止型半導体装置を用いれば電子部品実装の際における
実装の高密度化が可能になる。As is apparent from the above, in the resin-encapsulated semiconductor device of the present invention, the external connection leads project from the bottom surface of the encapsulation resin, so It can be placed within the contour of the resin. Therefore, the area occupied by the resin-encapsulated semiconductor device during surface mounting is determined by the projection surface of the encapsulating resin, and can be smaller than the conventional occupied area. Therefore, if the resin-encapsulated semiconductor device of the present invention is used, it is possible to increase the packaging density when mounting electronic components.
【図１】この発明の樹脂封止型半導体装置における断面
図である。FIG. 1 is a sectional view of a resin-sealed semiconductor device of the present invention.
【図２】図１の樹脂封止型半導体装置の表面実装状態を
示す図である。FIG. 2 is a diagram showing a surface-mounted state of the resin-encapsulated semiconductor device of FIG.
【図３】図１とは異なる樹脂封止型半導体装置の断面図
である。FIG. 3 is a cross-sectional view of a resin-sealed semiconductor device different from that in FIG.
【図４】図３の樹脂封止型半導体装置における外部接続
用リードへの半田ペーストの付着方法の説明図である。FIG. 4 is an explanatory diagram of a method of attaching a solder paste to an external connection lead in the resin-sealed semiconductor device of FIG.
【図５】図３の樹脂封止型半導体装置の表面実装状態を
示す図である。5 is a diagram showing a surface-mounted state of the resin-encapsulated semiconductor device of FIG.
【図６】従来の樹脂封止型半導体装置の断面図である。FIG. 6 is a cross-sectional view of a conventional resin-sealed semiconductor device.
【図７】図６の樹脂封止型半導体装置の表面実装状態を
示す図である。7 is a diagram showing a surface-mounted state of the resin-sealed semiconductor device of FIG.
１,１５…樹脂封止型半導体装置、 ２…半導体集
積回路、５,１０…電極、 ６…
ワイヤ、７,１６…外部接続用リード、 ８…
封止用樹脂、９…回路基板。1, 15 ... Resin-sealed semiconductor device, 2 ... Semiconductor integrated circuit, 5, 10 ... Electrode, 6 ...
Wires, 7, 16 ... Leads for external connection, 8 ...
Sealing resin, 9 ... Circuit board.
Claims (1)
の電極に接続された外部接続用リードを封止用樹脂で封
止して成る樹脂封止型半導体装置であって、 上記外部接続用リードは上記封止用樹脂の底面から突出
していることを特徴とする樹脂封止型半導体装置。1. A resin-sealed semiconductor device comprising a semiconductor integrated circuit and an external connection lead connected to an electrode of the semiconductor integrated circuit sealed with a sealing resin, wherein the external connection lead is A resin-encapsulated semiconductor device characterized in that it protrudes from the bottom surface of the encapsulating resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4044547A JPH05243463A (en) | 1992-03-02 | 1992-03-02 | Plastic molded type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4044547A JPH05243463A (en) | 1992-03-02 | 1992-03-02 | Plastic molded type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05243463A true JPH05243463A (en) | 1993-09-21 |
Family
ID=12694529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4044547A Pending JPH05243463A (en) | 1992-03-02 | 1992-03-02 | Plastic molded type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05243463A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017117825A (en) * | 2015-12-21 | 2017-06-29 | 日立オートモティブシステムズ株式会社 | Semiconductor package and semiconductor assembly |
-
1992
- 1992-03-02 JP JP4044547A patent/JPH05243463A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017117825A (en) * | 2015-12-21 | 2017-06-29 | 日立オートモティブシステムズ株式会社 | Semiconductor package and semiconductor assembly |
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