JPH05231815A - Displacement element, detecting element using it, and scanning tunnel microscope, interatomic force microscope, and information processor using detecting element - Google Patents

Abstract

PURPOSE:To enable a displacement element provided with a piezo-electric film and electrodes for displacing the piezo-electric film by utilizing a reverse piezo-electric effect to make high-speed scanning by forming the element in the shape of a both supported beam on an Si substrate. CONSTITUTION:The both supported beam-like displacement element 1 is formed by piling up a common electrode 7 for impressing a voltage, halved electrodes 5a and 5b, and a piezo-electric film 6 on an Si substrate 4 hollowed up by anisotropic etching. A probe 2 is formed at the center of the element 1. The probe 2 can be actuated in Y-axis direction. When, for example, the voltage to be applied across the film 6 is applied from the electrode 5a so that the film 6 can be elongated and from the electrode 5b so that the film 6 can be contracted, the probe 2 is displaced in Y-axis direction. In addition, when a voltage is applied across the common electrode 7 and an electrostatically driving electrode 3, the element 1 can scan in Z-axis due to an electrostatic force. Moreover, since the element 1 is formed to a beam-like shape having no free end, the warping of the element caused by an internal stress can be reduced and the reliability of the element 1 can be improved.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION The present invention relates to a scanning tunneling microscope (hereinafter referred to as "STM"), an atomic force microscope (hereinafter referred to as "STM").
A displacement element used for “AFM”), a detection element provided with a probe for the displacement element, and an STM and an AFM using the detection element.

Further, the present invention relates to a high-density and large-capacity information processing apparatus equipped with the above-mentioned detection element for recording, reproducing and erasing information by the STM method.

[0003]

2. Description of the Related Art In recent years, a semiconductor pressure sensor using a semiconductor as a mechanical structure in the background of semiconductor process technology,
Mechanical electrical devices (micromechanics) such as semiconductor acceleration sensors and microactuators have come into the limelight.

Characteristic features of such an element are that it is possible to provide a small-sized and high-precision mechanical mechanism component, and since the semiconductor wafer is used, the element and the electric circuit can be integrated on the Si wafer. Further, by manufacturing the semiconductor process as a base, it can be expected that the productivity is improved by batch processing of the semiconductor process. In particular, a micro-displacement element includes a cantilever shape (cantilever) that uses a piezoelectric thin film. Since it is possible to control extremely fine movement, it is possible to directly observe at the atomic level and the molecular level. It is applied to STM and AFM. For example, an STM probe (IEEE Micro Elec) using a minute displacement element proposed by Kuwait et al. Of Stanford University
tro Mechanical Systems, p1
88-199, Feb. 1990). This is Figure 1
As shown in FIG. 1, a back surface of the Si wafer 111 is partially removed to form a silicon membrane, and Al 112 is formed on the front surface.
And ZnO113 thin films are sequentially stacked to form a bimorph cantilever, and then the silicon membrane and the wafer protective etching layer (silicon nitride film) on the front surface of the wafer are removed by reactive dry etching from the back surface. We are making bimorph cantilevers. A tunnel current detection probe is attached to the free end of the upper surface of this cantilever to obtain a good STM image. Further, there is proposed a probe as shown in FIG. 12 in which a piezoelectric body 121 and an electrode 122 are laminated and the piezoelectric body is divided into four blocks to detect a tunnel current at a free end portion which can be driven in three axes. With such a configuration, as shown in FIGS. 13 (a), 13 (b) and 13 (c), X, Y,
It is possible to drive each Z axis independently. For example, if ZnO is used for the piezoelectric body, and the thickness of the minute displacement element is 5 μm,
10V when length is 1000μm and width is 200μm
When applied, the amount of displacement is about 200 nm on the X axis and about 2 on the Y axis.
0 nm and about 7500 nm on the Z axis. This is an excellent STM probe because it can be driven in three axes and can be easily integrated.

On the other hand, by using the STM method, atomic order and molecular order observation and evaluation of semiconductors or polymer materials and fine processing (EE Ehrichs, 4th I
international Conference o
n Scanning Tuning Micr
oscopy / spectroscopy, '89, S
13-3), and applications of information processing devices to various fields are being studied. In particular, the demand for recording devices with a large capacity for computer calculation information is increasing, and due to advances in semiconductor process technology, microprocessors have become smaller and computing power has improved, resulting in smaller recording devices. Is desired. For the purpose of satisfying these requirements, by changing the work function of the surface of the recording medium by applying a voltage from a converter consisting of a probe for generating a tunnel current existing on a driving means whose distance to the recording medium can be finely adjusted. A recording / reproducing apparatus has been proposed in which information is read out by recording / writing and detecting a change in tunnel current due to a change in work function, and a minimum recording area is 10 nm square.

Further, an STM probe (probe) is formed on the free end side of the cantilever, and the cantilevers that are independently displaced are multi-processed, and further integrated with a semiconductor process, with a probe for detecting a tunnel current on the same substrate. There has been proposed a recording / reproducing apparatus having a cantilever, an amplifier for amplifying the tunnel current thereof, a multiplexer for driving the cantilever and selecting the tunnel current, a shift register, and the like.

[0007]

Since the conventional drive scanning by the cantilever is a cantilever, the natural frequency is not so high and the rigidity is not so high. In addition, although the conventional cantilever structure can drive three axes,
The drive stroke was small. For this reason, wide-area scanning cannot be performed. In addition, problems due to mechanical shocks and the like have occurred without difficulty. Further, in the conventional cantilever structure, the structure is entirely a thin film. When different kinds of thin films are bonded or laminated to each other, internal stress of the thin films inevitably occurs. It is considered that this occurs at the interface due to the difference in thermal expansion coefficient between different kinds of thin films and the difference in lattice constant.
In particular, in a thin film (thickness of 2 μm or less), the internal stress generated at this interface becomes a very serious problem. At present, it is difficult to strictly control this stress value.
For this reason, there is a problem that the cantilever laminated with a thin film warps due to this internal stress. Therefore, the dimensional accuracy could not be improved so much.

An object of the present invention is to increase the rigidity of the above-mentioned element and to enable the element to be simultaneously driven in the film thickness direction and the in-plane direction of the Si substrate, thereby enabling higher-speed scanning, and further. The purpose is to eliminate warpage due to internal stress of the element and improve dimensional accuracy.

Another object of the present invention is to provide a highly reliable STM, AFM, and a high-density and large-capacity information processing device using the above-mentioned element.

[0010]

According to the present invention, since the displacement element is formed in the shape of a doubly supported beam on the Si substrate, the rigidity can be increased, and since there is no free end, the amount of warpage can be reduced. It can be kept low. Further, the both-sided beam can be largely displaced in the longitudinal direction, and a means for displacing the piezoelectric film in the film-thickness direction by an electrostatic force or a combination with a cantilever-shaped displacement element can be used. Simultaneous driving in the in-plane direction of the Si substrate is possible.

That is, the present invention is, firstly, a displacement element having a piezoelectric film and an electrode for displacing the piezoelectric film by an inverse piezoelectric effect, the element being a free end portion on a Si substrate. And a displacement element formed in the in-plane direction of the Si substrate, wherein the displacement element is formed in a doubly supported beam shape on the Si substrate, and A displacement element formed in a cross shape on the Si substrate and displaced in two axial directions within the surface of the Si substrate. Further, the displacement element further comprises a piezoelectric film. An electrode for displacing in the film thickness direction by electrostatic force, or a cantilever beam having a piezoelectric film and an electrode for displacing the piezoelectric film in the film thickness direction of the piezoelectric film by an inverse piezoelectric effect The displacement element is provided with a displacement element.

A second aspect of the present invention is a detecting element for use in a scanning tunneling microscope or an atomic force microscope, characterized in that a probe electrode is provided on the displacement element according to the first aspect of the present invention. The detection element is characterized in that a plurality of elements are provided on the same substrate.

Further, the present invention thirdly, the above-mentioned detection element, and drive means for relatively moving the detection element and the sample,
A scanning tunneling microscope comprising: a bias voltage applying unit for applying a bias voltage between the sample and the detection element; and fourth, the detection element and the detection element. Driving means for relatively moving the sample, means for generating a tunnel current that changes in response to the amount of deflection of the detection element, and control means for changing the amount of deflection according to the applied voltage. And a means for applying a voltage to the control means so that the value of the tunnel current is substantially a predetermined constant value. Atomic force microscope, fifth: When,
Driving means for relatively moving the detection element and the recording medium, pulse voltage applying means for applying a recording pulse voltage between the detection element and the recording medium, the detection element and the recording medium And a bias voltage applying unit for applying a bias voltage between the information processing device and the information processing device.

In the above displacement element of the present invention, the materials and manufacturing method of the driving electrode and the piezoelectric film are conventionally known techniques, for example, vacuum deposition method, sputtering method, chemical vapor deposition method generally used in the semiconductor industry. A thin film manufacturing technique such as a method, a photolithography technique, and an etching technique can be applied, and the manufacturing method does not limit the present invention.

Further, the recording medium for information recording preferably used in the present invention comprises an electrode substrate and a recording layer provided thereon, and in addition, in terms of current / voltage characteristics, memory switching phenomenon (electricity Those with a memory effect) can be used.

The electric memory effect referred to in the present invention means at least two different resistance states in response to voltage application, and a voltage or current exceeding a threshold value that changes the conductivity of the recording layer between the states. It can be freely transitioned by applying
It is also said that each of the obtained resistance states can be maintained as long as a voltage or current that does not exceed the threshold value is applied.

Specific examples of the material forming the recording layer include:
For example, the following may be mentioned.

(1) Oxide glass, borate glass, or S compounded with a group III, IV, V, or VI element of the periodic table
Amorphous semiconductors such as chalcogenide glass containing e, Te and As can be mentioned. They are intrinsic semiconductors having an optical bandgap Eg of about 0.6 to 1.4 eV or an electric activation energy ΔE of about 0.7 to 1.6 eV. Specific examples of chalcogenide glass include As-
Se-Te system, Ge-As-Se system, Si-Ge-As
-Te system, for example _{Si 16 Ge 14 As 5 Te 65} ( suffixes atomic%), or Ge-Te-X type, Si-Te-X type (X = a small amount of V, VI group elements), such as Ge ₁₅ Te ₈₁ Sb
₂ S ₂ may be mentioned.

Further, Ge—Sb—Se type chalcogenide glass can also be used.

In the amorphous semiconductor layer in which the above compound is deposited on the electrode, the electric memory effect of the medium can be exhibited by applying a voltage in the direction perpendicular to the film surface using a probe electrode.

As a method of depositing such a material, a conventionally known thin film forming technique can sufficiently achieve the object of the present invention.
For example, as a suitable film forming method, a vacuum vapor deposition method, a cluster ion beam method or the like can be mentioned. In general,
The electric memory effect of such a material has been observed at a film thickness of several μm or less, but a film thickness of 1 μm or less is preferable from the viewpoint of uniformity and recording property, and a film thickness of 500 Å or less is more preferable.

From the viewpoint of the recording resolution of the recording medium, it is desirable that the recording layer be as thin as possible, and the more preferable film thickness is in the range of 30Å to 200Å.

(2) Furthermore, tetraquinodimethane (TC
NQ), TCNQ derivatives such as tetrafluorotetracyanoquinodimethane (TCNQF ₄ ), tetracyanoethylene (TCNE) and tetracyanonaphthoquinodimethane (TNAP), and electron-accepting compounds such as copper and silver. Mention may also be made of organic semiconductor layers in which salts with relatively low metals are deposited on the electrodes.

As a method for forming such an organic semiconductor layer, a method of vacuum-depositing the electron-accepting compound on a copper or silver electrode is used.

The electric memory effect of such an organic semiconductor has been observed at a film thickness of several tens of μm or less.
From the viewpoint of uniformity, 1 μm or less, further 30 Å to 500 Å
It is preferable that the film thickness is.

(3) Furthermore, there can be mentioned a recording medium in which molecules having both a group having a π electron level and a group having only a σ electron level are laminated on an electrode.

The structure of the dye having a π-electron system suitable for the present invention is, for example, a dye having a porphyrin skeleton such as phthalocyanine or tetraphenylporphyrin, an azulene dye having a squarylium group and a croconic methine group as a binding chain, and a quinoline. , Benzothiazole, benzoxazole, and other two nitrogen-containing heterocycles linked by a squarylium group and a croconic methine group, or a cyanine dye, or condensed polycyclic aromatic and aromatic rings such as cyanine dye, anthracene and pyrene And a chain compound obtained by polymerizing a heterocyclic compound and a polymer of a diacetylene group, further, a derivative of tetraquinodimethane or tetrathiafulvalene, an analog thereof and a charge transfer complex thereof, and further ferrocene, a trisbipyridine ruthenium complex, etc. Metal complex compound And the like.

In addition to the low molecular weight materials as described above, various high molecular weight materials can be used.

Examples thereof include condensation polymers such as polyimide or polyphenylene and polythiophene, and biopolymer materials such as polypeptide and bacteriorhodopsin.

Regarding the formation of the organic recording medium, the vapor deposition method, the cluster ion beam method or the like can be specifically applied, but the LB method is the known prior art because of its controllability, ease and reproducibility. Very suitable.

[0031]

EXAMPLES The present invention will be specifically described below with reference to examples.

Example 1 FIG. 1A shows a perspective view of a detecting element of this example. This is manufactured by a normal IC manufacturing process and Si anisotropic etching on a Si substrate, and the cantilever beam displacement element 1 having a pair of electrodes on the Si substrate 4 and the information input / output. The probe 2 and the electrostatic drive electrode 3 are arranged as shown in the figure. Although not shown, ICs such as an operation circuit of the detection element and a signal processing circuit are mounted on the Si substrate 4. By operating the doubly supported beam-shaped displacement element 1, scanning can be performed in the Y-axis direction shown in the figure, and by operating the electrostatic drive electrode 3, the central portion of the doubly supported beam-shaped displacement element 1 can be moved to the Z-axis. Can be scanned in any direction. Figure 1
FIG. 1B shows a schematic view of the AA cross section of FIG. The doubly supported beam-shaped displacement element 1 is formed on a Si substrate 4 which is hollowed out by anisotropic etching, and has a common electrode 7 for applying a voltage to a piezoelectric body and a piezoelectric body driving electrode 5 divided into two.
a, 5b and the piezoelectric film 6 are laminated. The probe 2 is formed at the center of the doubly supported beam-shaped displacement element 1. With this configuration, the probe 2 can be actuated in the Y-axis direction. For example, as shown in FIG. 1B, the piezoelectric body driving electrode 5 in which the voltage applied to the piezoelectric body film 6 is divided into two.
When a voltage is applied so as to contract the electrode 5b so that the piezoelectric film 6 extends at a, the probe electrode 2 is displaced in the Y-axis direction as a result.

When a voltage is applied to the common electrode 7 and the electrostatic drive electrode 3, the Z axis can be scanned by electrostatic force.

With such a configuration, the probe 2 is connected to X,
A large scan can be performed on the Z axis.

Next, a method of manufacturing the above-mentioned detection element will be described. FIG. 2 is a diagram showing a manufacturing process of the detection element of this embodiment. The Si ₃ N ₄ film 23 is formed on the surface of the (100) n-type Si substrate 21 by an LPCVD apparatus (low pressure CVD apparatus) to a thickness of 1000.
Å Film formation and patterning (FIG. 2A), and anisotropic etching of a region 23 which will be a gap during electrostatic drive in the future using the Si ₃ N ₄ film 22 as a mask using KOH aqueous solution or the like (FIG. 2 (b)). Next, an electrostatic drive electrode 3 such as Al is formed on the surface and patterned (FIG. 2).
(C)). Next, the sacrificial layer 24 is formed. In this example, ZnO formed by the sputtering method was used (FIG. 2).
(D)). After that, the surface irregularities were removed by ion milling to make the surface smooth (FIG. 2 (e)). Next, a piezoelectric body driving electrode 25 of Pt or the like is formed by 1000 Å and patterned and etched to form a piezoelectric film 26 such as PZT by sputtering of 3000 Å, and patterning is repeated. Next, the probe 2 is formed by the lift-off method (FIG. 2F). Next, the surface probe 2 and the like are protected with polyimide or the like, ZnO in the sacrificial layer 24 is etched and removed with an acid, and finally the polyimide is removed (FIG. 2G).

Since the detection element thus manufactured has a double-supported beam structure, no large warpage occurred even when internal stress remained during formation of the piezoelectric thin film or during formation of the electrode thin film. Further, in order to improve the dimensional accuracy, it is preferable that the constituent thin film material of the double-supported beam-shaped displacement element has tensile stress as a whole.

The dimensions and performances of the produced detection element are as follows: Piezoelectric thin film: PZT thin film 0.3 μm Piezoelectric electrode: Pt thin film 0.1 μm Double-supported beam-shaped displacement element length: 1000 μm Double-supported beam-shaped Displacement element width: 200 μm Electrostatic gap distance: 5 μm Y-axis displacement: 0.32 × V1 μm (V1: Piezoelectric body applied voltage (V)) Z-axis displacement: 0.2 × V2 ² μm (V2: Electrostatic drive applied voltage (V)) Z-axis natural frequency: 17.5 KHz Mechanical Q-value: 100 In this way, a scanning element with high responsiveness and high rigidity can be formed while allowing large scanning in the Y and Z axes. We were able to. Further, when desired responsiveness and rigidity are required, the length of the cantilever beam displacement element may be changed, the material of the piezoelectric film may be changed, the thickness may be changed, or the like. Although PZT is used as the piezoelectric film in this embodiment, other piezoelectric materials such as ZnO, AlN, Ta ₂ O ₅ , and PLZT may be used. Further, although Pt is used as the electrode, a material such as Au, Pd or Ti may be used. Although ZnO is selected as the sacrificial layer, any material that can be easily etched such as Poly-Si or polyimide may be selected.

FIG. 3 shows a perspective view when a plurality of the detection elements are integrally formed on a Si substrate. In addition to the doubly supported beam-shaped displacement element 1, the probe 2, the tunnel current amplifier 31 and an IC 32 capable of transferring various kinds of control of operations of a plurality of detection elements and information can be mounted on the Si substrate 4. This is drawn out to the electrode pad 33.

Further, an STM device using the detecting element of FIG. 3 was manufactured. A block diagram of this device is shown in FIG.

In the present apparatus, first, the probe of 2 was brought close to the sample of 42 (Z direction in the figure) by the detection element manufactured in this example of 41 in the figure, and then X and Y in the plane of the sample 42. The direction is scanned by the 43 XY stage, a voltage is applied between the probe 2 and the sample 42 by the bias voltage applying circuit of 44, and the tunnel current observed at this time is read by the tunnel current amplifying circuit of 45. , Observe the image.

The distance control between the sample 42 and the probe 2 and the drive control of the XY stage are performed by the drive control circuit 46, and the sequence control of these circuits is performed by the CPU 47. Although not shown in the figure, as a scanning mechanism by the XY stage 43, a cylindrical piezo actuator,
This is done using a control mechanism such as a parallel spring, a differential micrometer, a voice coil, and an inch worm.

With this apparatus, the surface of the sample 42 was observed using a HOPG (graphite) plate. A bias voltage applying circuit 44 applied a DC voltage of 200 mV between the probe 2 and the sample 42. In this state, the probe 2 was scanned along the sample 42, and the surface was observed from the signal detected by the tunnel current detection circuit 45. When observing with a scan area of 0.05 μm × 0.05 μm,
A good atomic image could be obtained.

The detection element of the present invention has a high rigidity and a high natural frequency, so that an STM image can be stably obtained at high speed. As described above, a good scanning tunneling microscope can be obtained by using the detection element of the present invention.

FIG. 5 is a block diagram of an AFM apparatus using the detecting element of FIG. 3, in which the STM apparatus shown in FIG. 4 is improved and the probe 2 is used as a force detecting probe. The structure of the sample surface can be obtained by measuring the interatomic force acting between the force detection probe 2 and the sample 42 and feeding it back so as to keep its magnitude constant. In this case, the beam displacement amount measuring device 48 for measuring the displacement amount of the both-supported beam (beam) of the detection element 41 is
Various types are known, but an optical lever method, an electrostatic detection method, and the like are preferable. Since the AFM does not measure the tunnel current, a bias voltage applying circuit, a tunnel current detecting circuit, etc. in the STM are not necessary, but other members with the same reference numerals are the same as in the STM.

For the AFM experiment, HOP was added to sample 42.
The surface was observed using a G (graphite) plate. Also for this, a good atomic image could be obtained.

FIG. 6 shows a block diagram and a block diagram of an information processing apparatus using the detecting element of the present invention. Structure 6
In the inside of 08, a doubly supported beam-shaped displacement element 602 of the detection element 601 of this embodiment, a probe 603, and an IC 617 for controlling them are attached to a tilt correction mechanism 606, and the substrate 605 of a recording medium and recording are opposed to this. Medium 60
4 is attached via an XY scanning mechanism 607.
The XY scanning mechanism 607 is connected to the XY scanning drive circuit 609, and the detection element 601 is connected to the matrix probe control circuit 610 via the probe 603 and the medium control circuit 613.
It is connected to the detection element scan drive circuit 611 and the inclination correction circuit 612. Also, the matrix probe control circuit 610
Is an encoder 614a for inputting / outputting data, a decoder 614
It is connected to b.

These are connected to the microcomputer 615, and the contents of information can be confirmed on the display device 616.

Here, the write data is the encoder 614a.
Is encoded by the matrix probe control circuit 610.
To the recording medium 604 by driving the detection element 601. When reading data, the microcomputer 615 generates an address to be read and drives the matrix probe control circuit 610. The matrix probe control circuit 610 reads the signals from the plurality of probes 603 from the detection element 601 according to this address and transfers them to the decoder 614b.

The decoder 614b performs error detection or error correction from this signal and outputs data.

The matrix probe control circuit 610 directly reads the information of the tunnel current flowing through each probe electrode, the probe-medium distance control circuit 613 detects the deviation from the reference position, and the Z direction control of each probe 603 is performed. Is controlled by the detection element scanning drive circuit 611, and when it is necessary to correct the posture of the detection element 601, the inclination correction circuit 612 performs it.

FIG. 6B shows how the information processing apparatus records and reproduces data. The detection element 601 and the recording medium 604 are opposed to each other. The recording medium 604 has
A glass substrate 605 on which an Au electrode was vacuum-deposited with a thickness of 100 nm was used. First, a voltage of 0.5 V is applied to the probe 603 and the recording medium 604 including an Au electrode. Next, a voltage is applied to the electrostatic drive electrode 3 so that the tunnel current value between the probe 603 and the recording medium 604 is about 1 nA, and the probe 2 is displaced along the Z axis. After that, in order to apply a perturbation to the recording medium and selectively generate disturbance, 5 V is applied.
When the pulse voltage of (1 μsec) is applied, the recording bit 61
8 is formed. After that, a voltage is applied to the piezoelectric body and scanning is performed in the X direction by the both-end beam-shaped displacement element 602, and recording bits are recorded one after another. Next, in the reproducing method of the recording bit, the voltage is controlled to the electrostatic driving electrode 3 so that the tunnel current value becomes constant, and the voltage applied to the electrostatic driving electrode is judged to determine the recording bit. It is possible to determine the presence or absence of.

It has been confirmed that the information processing apparatus of this embodiment can write, read, and erase recorded information with good reproducibility, stability, and high speed.

Example 2 In this example, another mode of the detecting element of the present invention is shown. The difference from the first embodiment is that the detection element scans in three axes of X, Y, and Z.

FIG. 7 is a perspective view of the detecting element of this embodiment. As in the first embodiment, a doubly supported beam which is formed on the Si substrate 4 and is formed by laminating the common electrode 7 for applying a voltage to the piezoelectric body, the piezoelectric body driving electrode 71 divided into four, and the piezoelectric body film 6. There is a linear displacement element 1 and a probe 2, and a hinge 70 is provided at the center for easy scanning. The feature of the present embodiment is that the X axis can be scanned by applying an arbitrary voltage to each of the four piezoelectric driving electrodes 71. STM and AF using this detection element
The same results as in Example 1 were obtained for M and the information processing apparatus.

Example 3 In this example, another mode of the detecting element of the present invention is shown. FIG. 8 is a perspective view of the detection element of this embodiment. This is a cross-shaped cross-supporting beam-shaped displacement element 80 of the orthogonal cross shape formed on the Si substrate 4 with the same configuration as that of the detection elements of Examples 1 and 2.
The Z axis is scanned by the electrostatic drive electrode 3 while scanning the axis and the Y axis. It goes without saying that such a configuration is also suitable for integration. Further, the same results as in Example 1 were obtained also in the STM, AFM and information processing apparatus using this detection element.

Embodiment 4 This embodiment shows another mode of the detecting element of the present invention. FIG. 9 is a perspective view of the detection element of this embodiment.

By operating the doubly supported beam-shaped displacement elements 1 and 1 ', the probe 2 can be scanned along the X axis with the beam 91 as a fulcrum. 9A of FIG.
A schematic view of the cross section is shown in FIG. The cantilever-shaped displacement element 92 is formed on a beam 91 made of Si, and includes a lower electrode 93 and a middle electrode 94 for applying a voltage to the piezoelectric film, an upper electrode 95, and piezoelectric films 96 and 97. It is configured by stacking. With this configuration, the bimorph piezoelectric element can be actuated in the Z-axis direction. The probe 2 is formed at the free end of the cantilever displacement element 92. When a voltage is applied from the power source 98 to the piezoelectric body driving electrode, the piezoelectric body film 96 expands and the piezoelectric body thin film 97 contracts, as shown in the figure. As a result, the probe 2 moves up in the direction shown. Next, a schematic view of the BB cross section of FIG. 9A is shown in FIG.
It shows in (c). This is a cantilever displacement element 92 at the center.
There are double-supported beam-shaped displacement elements 1 and 1'on both sides. When a voltage is applied to the piezoelectric body driving electrode by the power sources 99 and 99 ', the cantilever displacement element 92 can be displaced as shown in the figure.

In such a structure, the probe 2 can be largely scanned along the X and Z axes.

Also in the STM, AFM and information processing apparatus using this detecting element, the same results as in Example 1 were obtained.

Embodiment 5 This embodiment shows another mode of the detecting element of the present invention. The difference from the fourth embodiment is that a plurality of cantilever beam displacement elements are scanned in the X-axis by the both-end beam displacement element.

FIG. 10 is a perspective view of the detection element of this embodiment. Similar to the fourth embodiment, a plurality of cantilever beam displacement elements 92 and the probe 2 are provided on the Si substrate 4, and the beam 91 is formed by the cantilever beam displacement elements 1 as a fulcrum. By applying a voltage to the cantilever beam displacement element 1, the cantilever beam displacement element 92 can be scanned along the X axis. The same results as in Example 1 were obtained also in the STM, AFM and information processing apparatus using this detection element.

[0062]

As described above, in the displacement element of the present invention, since it is formed in a double-supported beam shape on the Si substrate,
Since the rigidity is higher than that of the conventional cantilever displacement element and the simultaneous driving of the element in the film thickness direction and the in-plane direction of the Si substrate is possible, higher speed scanning can be performed.

Further, in the displacement element of the present invention having no free end, warpage due to internal stress can be reduced, and the element has higher reliability.

Further, an STM using the detecting element of the present invention,
With AFM, the surface can be observed at a higher speed, and a good atomic image can be obtained.

Furthermore, in the information processing apparatus using the detecting element of the present invention, it becomes possible to write, read, and erase recorded information with good reproducibility, stability, and at a higher speed.

[Brief description of drawings]

FIG. 1 is a diagram showing an example of a detection element of the present invention.

FIG. 2 is a diagram showing a manufacturing process of the detection element of the present invention.

FIG. 3 is a perspective view when a plurality of detection elements are integrally formed on a Si substrate.

FIG. 4 is a block diagram of the STM device of the present invention.

FIG. 5 is a block diagram of an AFM device of the present invention.

FIG. 6 is a block diagram and a block diagram of an information processing apparatus of the present invention.

FIG. 7 is a perspective view showing another aspect of the detection element of the present invention.

FIG. 8 is a perspective view showing another aspect of the detection element of the present invention.

FIG. 9 is a perspective view showing another aspect of the detection element of the present invention.

FIG. 10 is a perspective view showing another aspect of the detection element of the present invention.

FIG. 11 is a perspective view of a conventional bimorph cantilever type probe.

FIG. 12 is a cross-sectional view showing a configuration of a conventional bimorph cantilever type probe.

FIG. 13 is a diagram for explaining driving of a conventional bimorph cantilever type probe.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Doubly supported beam-shaped displacement element 2 Probe 3 Electrostatic drive electrode 4 Si substrate 5a, 5b 2 Divided piezoelectric body drive electrode 6 Piezoelectric film 7 Common electrode 21 (100) n-type Si substrate 22 Si ₃ N ₄ Membrane 23 Region to be a gap during electrostatic driving 24 Sacrificial layer 25 Piezoelectric body driving electrode 31 Tunnel current amplifier 32 IC 33 Electrode pad 41 Detection element 42 Sample 43 XY stage 44 Bias voltage application circuit 45 Tunnel current detection circuit 46 Drive control circuit 47 CPU 48 Beam displacement measuring device 601 Detection element 602 Cantilever beam displacement element 603 Probe 604 Recording medium 605 Recording medium substrate 606 Tilt correction mechanism 607 XY scanning mechanism 608 Structure 609 XY scanning driving circuit 610 Matrix probe control Circuit 611 Detection element scan drive circuit 612 Tilt Correction circuit 613 Inter-media control circuit 614a Encoder 614b Decoder 615 Microcomputer 616 Display device 617 IC 618 Recording bit 70 Hinge 80 Cross-shaped double-ended beam displacement element 91 Beam 92 Cantilever beam displacement element 93 Lower electrode 94 Medium Electrode 95 Upper electrode 96,97 Piezoelectric film 98,99,99 'Power supply 111 Si wafer 112 Al 113 ZnO 121 Piezoelectric 122 electrode

 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Osamu Takamatsu 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Yu Nakayama 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon (72) Inventor Yoshiyuki Suzuki 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Takehiko Kawasaki 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc.

Claims (10)

[Claims] 1. A displacement element having a piezoelectric film and an electrode for displacing the piezoelectric film by an inverse piezoelectric effect,
A displacement element, characterized in that the element is formed on a Si substrate so as not to have a free end and is displaced in the in-plane direction of the Si substrate. 2. A displacement element according to claim 1, wherein the displacement element is formed in a doubly supported beam shape on a Si substrate, and is displaced in the longitudinal direction of the doubly supported beam. 3. The displacement element according to claim 1, wherein the displacement element is formed in a cross shape on a Si substrate and is displaced in two axial directions within the surface of the Si substrate. 4. A displacement element according to any one of claims 1 to 3, further comprising an electrode for displacing the piezoelectric film in the film thickness direction by an electrostatic force. 5. The cantilever beam according to claim 1, further comprising a piezoelectric film and an electrode for displacing the piezoelectric film in a film thickness direction of the piezoelectric film by an inverse piezoelectric effect. Displacement element comprising a combination of linear displacement elements. 6. A detection element comprising the displacement element according to claim 1 provided with a probe electrode. 7. A detection element comprising a plurality of the detection elements according to claim 6 provided on the same substrate. 8. The detection element according to claim 6, a drive means for relatively moving the detection element and the sample, and a bias for applying a bias voltage between the sample and the detection element. A scanning tunneling microscope comprising: a voltage applying unit. 9. The detection element according to claim 6, drive means for relatively moving the detection element and the sample, and for generating a tunnel current that changes in response to the amount of deflection of the detection element. Means, a control means for changing the deflection amount according to an applied voltage, and a means for applying a voltage to the control means so that the value of the tunnel current becomes a predetermined constant value. Atomic force microscope characterized in that 10. A detection element according to claim 6, drive means for relatively moving the detection element and a recording medium, and a recording pulse voltage is applied between the detection element and the recording medium. An information processing apparatus comprising: a pulse voltage applying unit for applying a bias voltage; and a bias voltage applying unit for applying a bias voltage between the detection element and the recording medium.