JPH05222541A - Gold plating method - Google Patents
Gold plating methodInfo
- Publication number
- JPH05222541A JPH05222541A JP2233092A JP2233092A JPH05222541A JP H05222541 A JPH05222541 A JP H05222541A JP 2233092 A JP2233092 A JP 2233092A JP 2233092 A JP2233092 A JP 2233092A JP H05222541 A JPH05222541 A JP H05222541A
- Authority
- JP
- Japan
- Prior art keywords
- gold plating
- nickel
- plating film
- gold
- displacement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
Landscapes
- Chemically Coating (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
(57)【要約】
【目的】ニッケル上に無電解金めっき膜を形成する方法
において、無電解金めっきの触媒としてニッケル上に形
成する置換金めっき膜の厚さを0.1μm以下とするこ
とにより、ニッケルと金めっき膜と密着力の向上を計
る。
【構成】ニッケルと金めっき膜との密着力は図1に示す
ように置換金めっき膜厚に対して0.1μm以上の膜厚
で急激に低下する傾向がある。また、無電解金めっきの
触媒としては置換金めっき膜厚は0.005μm以上が
必要である。従って、置換金めっき膜厚は0.005〜
0.1μmであることが好ましい。
【効果】これにより、ニッケルと金めっき膜との密着力
が向上し、はんだ付け、ワイヤボンディング等の接続信
頼性が向上し、製造歩留りも向上する。
(57) [Abstract] [Purpose] In the method of forming an electroless gold plating film on nickel, the thickness of the displacement gold plating film formed on nickel as a catalyst for electroless gold plating should be 0.1 μm or less. To improve the adhesion between nickel and gold plating film. [Structure] As shown in FIG. 1, the adhesion between nickel and the gold plating film tends to sharply decrease at a film thickness of 0.1 μm or more with respect to the thickness of the displacement gold plating film. Further, as a catalyst for electroless gold plating, the displacement gold plating film thickness is required to be 0.005 μm or more. Therefore, the displacement gold plating film thickness is 0.005
It is preferably 0.1 μm. [Effect] As a result, the adhesion between the nickel and the gold plating film is improved, the connection reliability of soldering, wire bonding, etc. is improved, and the manufacturing yield is also improved.
Description
【0001】[0001]
【産業上の利用分野】本発明はニッケル上に無電解金め
っき法により金めっき膜を形成する方法に係り、特にニ
ッケルとの密着性の高い金めっき膜を形成するのに好適
な金めっき方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a gold plating film on nickel by electroless gold plating, and particularly to a gold plating method suitable for forming a gold plating film having high adhesion to nickel. Regarding
【0002】[0002]
【従来の技術】一般にニッケル上への無電解金めっきは
次のように行われる。すなわち、ニッケル表面を必要に
応じてアルカリ脱脂、酸洗などの処理により清浄化し、
ついで置換型金めっき液に浸漬して、金とニッケルの電
位差を利用してニッケル上に無電解金めっきの触媒とな
る金を析出させる。ここで上記のニッケル表面の清浄化
処理はニッケルをめっき法により形成し、置換金めっき
と連続して行う場合は不要である。次に還元剤を含有す
る無電解金めっき液に浸漬して前記の置換反応で析出さ
せた金を触媒として、無電解金めっき反応により、所定
の厚さの金めっき膜を形成する。この様な金めっき方法
に関しては、例えば特開平1−180985に記載されてい
る。2. Description of the Related Art Generally, electroless gold plating on nickel is performed as follows. That is, if necessary, the nickel surface is cleaned by treatments such as alkaline degreasing and pickling,
Then, it is immersed in a displacement type gold plating solution to deposit gold as a catalyst for electroless gold plating on nickel by utilizing the potential difference between gold and nickel. Here, the above-mentioned cleaning treatment of the nickel surface is not necessary when nickel is formed by the plating method and is continuously performed with the displacement gold plating. Next, a gold plating film having a predetermined thickness is formed by an electroless gold plating reaction by immersing it in an electroless gold plating solution containing a reducing agent and using gold deposited by the substitution reaction as a catalyst. Such a gold plating method is described in, for example, JP-A-1-180985.
【0003】[0003]
【発明が解決しようとする課題】上記の従来技術では置
換金めっきの膜厚を大きい場合にニッケルと金めっき膜
との密着力が低下するという欠点がある。密着力が低下
すると例えば無電解金めっき膜の上にワイヤボンディン
を行ったとき、無電解金めっき膜が剥がれて十分な強度
と信頼性を有するワイヤボンデングができない。また、
金とニッケルを熱により相互拡散させようとしたとき、
両者がうまく拡散せず金がはじいて金とニッケルが均一
に拡散されなくなる。さらにニッケルが溶出せずに酸化
されて酸化ニッケルになっていると、はんだ付けをしよ
うとしたとき金めっき膜だけがはんだに食われ、はんだ
がニッケルに濡れ広がらず十分なはんだ付けないという
問題を生ずる。The above-mentioned conventional technique has a drawback that the adhesion between nickel and the gold plating film is reduced when the thickness of the displacement gold plating is large. If the adhesion is lowered, for example, when wire bonding is performed on the electroless gold plating film, the electroless gold plating film is peeled off, and wire bonding with sufficient strength and reliability cannot be performed. Also,
When trying to mutually diffuse gold and nickel by heat,
Both do not diffuse well and the gold repels and the gold and nickel are not evenly diffused. Furthermore, if nickel is oxidized without oxidation into nickel oxide without elution, only the gold plating film is eaten by the solder when soldering is attempted, and the problem that the solder does not spread to nickel and does not spread sufficiently Occurs.
【0004】本発明の目的は、金とニッケルの密着性を
確保し、良好なワイヤボンディング、金とニッケルの拡
散、はんだ付けの行える金めっき方法を提供するにあ
る。An object of the present invention is to provide a gold plating method which secures the adhesion between gold and nickel and can perform good wire bonding, diffusion of gold and nickel, and soldering.
【0005】[0005]
【課題を解決するための手段】上記の目的は無電解金め
っきの触媒となる置換金めっきの反応時間すなわち置換
金めっき膜厚を適正に保つことで達成される。置換金め
っき膜は、次に行う無電解金めっき反応の触媒としては
0.005μm以上あればよく、また0.1μm以上析出
させると置換金めっき膜とニッケルとの界面に沿ってニ
ッケルの溶出または酸化が過度に進行し、両者の密着力
が低下してしまう。従って、置換金めっき膜の好ましい
厚さは0.005μmから0.1μmであり、さらに、好
ましくは0.01μmから0.07μmである。The above object can be achieved by appropriately maintaining the reaction time of the displacement gold plating, which is a catalyst for electroless gold plating, that is, the displacement gold plating film thickness. The displacement gold plating film may be 0.005 μm or more as a catalyst for the electroless gold plating reaction to be performed next, and when it is deposited to be 0.1 μm or more, nickel elution or nickel along the interface between the displacement gold plating film and nickel may be performed. Oxidation proceeds excessively, and the adhesion between the two is reduced. Therefore, the thickness of the displacement gold plating film is preferably 0.005 μm to 0.1 μm, and more preferably 0.01 μm to 0.07 μm.
【0006】[0006]
【作用】置換金めっきの析出反応は、ニッケルの溶出ま
たは酸化に伴って放出された電子をめっき液中の金イオ
ンが受け取って固体の金としてニッケル表面に析出する
反応である。このニッケルの溶出または酸化は析出した
金とニッケルとの界面に沿って発生することが多く、置
換金めっき反応時間が長いほどニッケルの溶出または酸
化が進行し、ニッケルと置換金めっきとの密着力は低下
する。第1回にニッケルと置換金めっきとの密着力と置
換金めっき膜厚0.07μm以下ではいずれも400kg
以上であるのに対し、0.07μmより大きくなると低
下し始め0.15μmでは200kg以下にまで低下す
る。このようにニッケルと置換金めっきとの密着力を確
保するには置換金めっき膜厚を0.1μm以下にするこ
とが必要であり、さらに好ましくは0.07μm以下に
することが必要である。また本発明はニッケルがホウ素
化合物を還元剤としたニッケル−ボロン無電解めっき膜
であるとき特に効果が大きい。The displacement gold plating deposition reaction is a reaction in which the gold ions in the plating solution receive the electrons emitted by the elution or oxidation of nickel and deposit as solid gold on the nickel surface. This nickel elution or oxidation often occurs along the interface between the deposited gold and nickel, and as the displacement gold plating reaction time increases, nickel elution or oxidation progresses, and the adhesion force between nickel and displacement gold plating increases. Will fall. At the 1st time, the adhesion strength between nickel and the displacement gold plating and the displacement gold plating film thickness of 0.07 μm or less are both 400 kg.
In contrast to the above, when it exceeds 0.07 μm, it begins to decrease and at 0.15 μm, it decreases to 200 kg or less. Thus, in order to secure the adhesion between nickel and the displacement gold plating, the displacement gold plating film thickness needs to be 0.1 μm or less, and more preferably 0.07 μm or less. The present invention is particularly effective when the nickel is a nickel-boron electroless plating film using a boron compound as a reducing agent.
【0007】[0007]
【実施例】以下、本発明について実施例で詳述する。EXAMPLES The present invention will be described in detail below with reference to examples.
【0008】実施例1〜5 ガラスエポキシ基板に銅による配線パターンを形成した
配線基板に、一般に行われている有機溶剤による脱脂、
塩酸による酸洗を行い、ついでパラジウムによる活性化
を行った後、ジメチルアミンボランを還元剤とする無電
解ニッケルめっき液を用いて、60℃で30分間めっき
を行い5μmの厚さにニッケルめっき膜を形成した。そ
の後、シアン化金カリウムを主成分とする置換金めっき
液を用いて置換金めっき膜を形成し、さらに塩化金酸ナ
トリウム、亜硫酸ナトリウム、チオ硫酸ナトリウムを主
成分とし、チオ尿素を還元剤とする無電解金めっき液を
用いて2μmの厚さに金めっき膜を形成した。Examples 1 to 5 On a wiring board in which a wiring pattern made of copper is formed on a glass epoxy board, degreasing with a commonly used organic solvent is performed.
After pickling with hydrochloric acid and then activation with palladium, plating was performed at 60 ° C. for 30 minutes using an electroless nickel plating solution using dimethylamine borane as a reducing agent to form a nickel plating film with a thickness of 5 μm. Was formed. After that, a displacement gold plating film is formed using a displacement gold plating solution containing potassium gold cyanide as a main component, and further sodium chloroaurate, sodium sulfite, and sodium thiosulfate are contained as main components, and thiourea is used as a reducing agent. A gold plating film was formed to a thickness of 2 μm using an electroless gold plating solution.
【0009】[0009]
【表1】 [Table 1]
【0010】無電解金めっき後のはんだ付け性、ワイヤ
ボンディング強度ともに本発明の条件では良好であり、
無電解金めっきの析出状態も良好で触媒としての機能を
十分に果たしている。一方、比較例に示すように置換金
めっき膜淳0.001μm以下では触媒として不十分で
あり、無電解金めっきの析出ムラを生じ、それによるは
んだ濡れ不良、ワイヤボンディング強度の低下が見られ
る。また0.15μmでは金とニッケルの密着力の低下
により、特にワイヤボンディン強度が低下し、はんだ濡
れ不良も生じている。Both the solderability after the electroless gold plating and the wire bonding strength are good under the conditions of the present invention.
The deposited state of electroless gold plating is also good, and it fully fulfills its function as a catalyst. On the other hand, as shown in the comparative example, if the displacement gold plating film thickness is 0.001 μm or less, it is insufficient as a catalyst and uneven deposition of electroless gold plating occurs, resulting in poor solder wetting and reduced wire bonding strength. On the other hand, when the thickness is 0.15 μm, the bond strength between gold and nickel is lowered, so that the wire bondin strength is particularly lowered, and the solder wetting failure occurs.
【0011】[0011]
【表2】 [Table 2]
【0012】加熱処理後の金とニッケルの拡散、はんだ
付け性、ワイヤボンディング強度ともに本発明の条件で
は良好であり、無電解金めっきの析出状態も良好で触媒
としての機能を十分に果たしている。一方、比較例に示
すように置換金めっき膜厚0.001μmでは触媒とし
て不十分であり、無電解金めっきの析出ムラを生じ、そ
れによる金とニッケルの拡散ムラ、はんだの濡れ不良、
ワイヤボンディング強度の低下がおこっている。また
0.15μmでは金とニッケルの密着力の低下ににより
加熱処理中に金めっき膜が剥がれて拡散ムラを発生し、
それに伴わないはんだ濡れ不良、ワイヤボンディン強度
の低下をきたしている。After the heat treatment, the diffusion of gold and nickel, the solderability, and the wire bonding strength are all good under the conditions of the present invention, and the state of electroless gold plating deposition is good, and the catalyst functions sufficiently. On the other hand, as shown in the comparative example, the displacement gold plating film thickness of 0.001 μm is not sufficient as a catalyst, resulting in uneven deposition of electroless gold plating, resulting in uneven diffusion of gold and nickel, poor solder wetting,
The wire bonding strength is reduced. When the thickness is 0.15 μm, the gold-plated film is peeled off during the heat treatment due to the decrease in the adhesion between gold and nickel, and uneven diffusion occurs.
As a result, poor solder wetting and lower wire bond strength are caused.
【0013】実施例6〜10 アルミナ基板にタングステンによる配線パターンを形成
した配線基板に、一般に行われている水酸化ナトリウム
水溶液によるアルカリ処理、塩酸による酸処理を行い、
ついでパラジウムによる活性化を行った後、ジメチルア
ミンボランを還元剤とする無電解ニッケルめっきを用い
て5μmの厚さにニッケルめっき膜を形成した。その
後、シアン化金カリウムを主成分とする置換金めっき液
を用いて置換金めっき膜を形成し、さらに亜硫酸金ナト
リウム、チオ硫酸ナトリウムを主成分とし、チオ尿素を
還元剤とする無電解金めっき液を用いて2μmの厚さに
金めっき膜を形成した。さらに750℃で10分間熱処
理を行ない金とニッケルを拡散させた。Examples 6 to 10 A wiring board in which a wiring pattern made of tungsten is formed on an alumina board is subjected to an alkali treatment with a sodium hydroxide aqueous solution and an acid treatment with hydrochloric acid, which are generally carried out.
Then, after activation with palladium, a nickel plating film was formed to a thickness of 5 μm by electroless nickel plating using dimethylamine borane as a reducing agent. After that, a displacement gold plating film is formed by using a displacement gold plating solution containing potassium gold cyanide as a main component, and further electroless gold plating containing sodium gold sulfite and sodium thiosulfate as main components and thiourea as a reducing agent. A gold plating film was formed to a thickness of 2 μm using the solution. Further, heat treatment was performed at 750 ° C. for 10 minutes to diffuse gold and nickel.
【0014】[0014]
【発明の効果】本発明により、ニッケルとその上に形成
した金めっき膜との密着力が向上し、それにより、良好
なはんだ付け性が得られ、ワイヤボンディング強度につ
いても高い値が得られるようになった。また、無電解金
めっき後に加熱処理を行なうプロセスにおいても、ニッ
ケルと金との密着力の不足に伴う金めっき膜の剥がれが
なくなり、均一で良好なニッケルと金の拡散膜が得ら
れ、はんだ付け性、ワイヤボンディング強度ともに良好
な結果が得られた。これらの結果、はんだ付け、ワイヤ
ボンディング等の接続信頼性を向上させ、歩留りよく配
線基板を製造することができるようになった。EFFECTS OF THE INVENTION According to the present invention, the adhesion between nickel and the gold plating film formed thereon is improved, whereby good solderability can be obtained and a high wire bonding strength can be obtained. Became. Also, in the process of heat treatment after electroless gold plating, peeling of the gold plating film due to insufficient adhesion between nickel and gold is eliminated, and a uniform and good diffusion film of nickel and gold is obtained, and soldering is performed. Good results were obtained with respect to the wire bonding strength and wire bonding strength. As a result, it has become possible to improve the connection reliability such as soldering and wire bonding and to manufacture a wiring board with a high yield.
【図1】置換金めっき膜厚とニッケルと金めっき膜との
密着力の関係を示す図である。FIG. 1 is a diagram showing a relationship between a displacement gold plating film thickness and an adhesion force between nickel and a gold plating film.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 村山 伸康 神奈川県秦野市堀山下1番地株式会社日立 製作所神奈川工場内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Nobuyasu Murayama 1 Horiyamashita, Hinoyama, Hadano, Kanagawa Hitachi, Ltd. Kanagawa factory
Claims (1)
っき液により金めっき膜を形成する方法において、無電
解金めっきの触媒としてニッケル上に形成する置換金め
っき膜の厚さを0.1μm以下としたことを特徴とする
金めっき方法。1. A method of forming a gold plating film on nickel using an electroless gold plating solution containing a reducing agent, wherein the thickness of the displacement gold plating film formed on nickel as a catalyst for electroless gold plating is 0. A gold plating method characterized in that the thickness is 1 μm or less.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2233092A JPH05222541A (en) | 1992-02-07 | 1992-02-07 | Gold plating method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2233092A JPH05222541A (en) | 1992-02-07 | 1992-02-07 | Gold plating method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05222541A true JPH05222541A (en) | 1993-08-31 |
Family
ID=12079700
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2233092A Pending JPH05222541A (en) | 1992-02-07 | 1992-02-07 | Gold plating method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH05222541A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6136702A (en) * | 1999-11-29 | 2000-10-24 | Lucent Technologies Inc. | Thin film transistors |
US6533849B1 (en) | 1999-12-01 | 2003-03-18 | Gul Technologies Singapore Ltd | Electroless gold plated electronic components and method of producing the same |
JP2007239025A (en) * | 2006-03-08 | 2007-09-20 | Maruyasu Industries Co Ltd | Surface treatment structure and surface treatment method |
KR20160145533A (en) | 2014-08-25 | 2016-12-20 | 고지마 가가쿠 야쿠힌 가부시키가이샤 | Reduction-type electroless gold plating solution and electroless gold plating method using said plating solution |
-
1992
- 1992-02-07 JP JP2233092A patent/JPH05222541A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6136702A (en) * | 1999-11-29 | 2000-10-24 | Lucent Technologies Inc. | Thin film transistors |
US6533849B1 (en) | 1999-12-01 | 2003-03-18 | Gul Technologies Singapore Ltd | Electroless gold plated electronic components and method of producing the same |
JP2007239025A (en) * | 2006-03-08 | 2007-09-20 | Maruyasu Industries Co Ltd | Surface treatment structure and surface treatment method |
KR20160145533A (en) | 2014-08-25 | 2016-12-20 | 고지마 가가쿠 야쿠힌 가부시키가이샤 | Reduction-type electroless gold plating solution and electroless gold plating method using said plating solution |
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