JPH05218304A - Integrated distribution-type resistance- capacity and inductance-capacity network - Google Patents

Abstract

PURPOSE: To obtain a network capable of resonance which has a wide dynamic range of reactive characteristic by installing a plurality of contact terminals connected with a resistance layer on a semiconductor integrated capacitor of high dielectric constant. CONSTITUTION: A surface layer 114 on a semiconductor substrate 112 is doped lower and acts as a region forming a space charge or a depletion layer 120. On the region, an insulating layer 116 and a metallic plate 118 are formed and made an outer contact with a reactance component of a network 100, via a contact pin 113. A resistance layer 126 is formed on the insulating layer 116, surrounding the metal plate 118, and turns into a resistance element. Metal plates 122A, 122B are formed on the resistance layer 126 and made outer contacts with resistive components of the network 100. By selecting an insulator having relative dielectric constant very much larger than a semiconductor depletion layer, a larger ratio between the maximum capacitance in the zero depletion layer thickness and the minimum capacitance in an inverted threshold value can be obtained.

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION This invention relates generally to resistance-capacitance networks, and more specifically to distributed resistance-
Capacity networks and induction-capacity networks.

[0002]

BACKGROUND OF THE INVENTION High quality capacitors.
Is an integral part of many electrical circuits. Capacities are available in various values with different properties. Variable capacitors with a wide dynamic range are only available in bulky sizes, making them unusable for microelectronic applications. Semiconductor variable capacitors, called varactors, are available, but have a very narrow dynamic range. Tunable electronic circuits such as filters and oscillators are currently tuned using fixed components for coarse tuning and tunable capacitors or inductors for fine tuning.

Electronic devices, and particularly communication devices, utilize various circuits such as filters and oscillators that must be tuned for proper operation. These circuits use a combination of fixed and tunable components to achieve their goals. The fixed component is used with the tunable component to provide a tunable circuit with sufficient dynamic range. The need for fixed value components precludes the design and manufacture of common circuits that operate over the desired range. Communication devices operating in a particular band must be extended to operate in different segments of that band because alternative and tunable components are unavailable. Each board is provided with different fixed value components along with variable characteristic components to achieve the desired performance specifications.

Another inconvenient area in electronic devices is that of distributed resistance-capacitance networks. These networks are particularly useful in communication devices. Today's distributed networks are also expanded and used. That is, several circuits are designed and manufactured that achieve the same function in different regions of their performance spectrum. Such expansions include manufacturing costs, inventory, handling, troubleshooting,
Significantly impact quality and the outcome of other issues. Several techniques have been used with some success to avoid proliferation. One such technique is laser trimming of printed parts.

[0005]

However, such an approach is only available for high frequency applications and has a limited range, and only reduces the number of substrates that achieve the same function. It does not completely eliminate the need for growth. It is therefore clear that there is a need for a tunable network with a wide dynamic range that has reactive characteristics.

[0006]

SUMMARY OF THE INVENTION In accordance with the present invention, there is provided an integrated circuitized distributed resistance-capacitor network having a high dielectric constant electronically tunable semiconductor integrated capacitor. The network also includes a resistive layer formed over the high dielectric constant semiconductor integrated capacitor to provide the distributed resistance of the network. External contacts to the resistive portion of the network are provided through a plurality of contact terminals coupled to the resistive layer.

In another aspect of the invention, an integrated circuitized distributed inductive-capacitance network having a high dielectric constant electronically tunable semiconductor integrated capacitor is provided. The network also includes a conductive layer formed over the high dielectric constant semiconductor integrated capacitor to provide a distributed resistance for the network. External contacts to the network are provided via a plurality of contact terminals coupled to the conductive layer.

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A voltage variable capacitor, also known as a varactor, varactor diode, or varcap, is a semiconductor device in which the voltage present in the space charge region at the surface of the semiconductor bounded by an insulating layer. Is characterized as a capacity that is sensitive to. Varactors are only useful in high frequency applications where their dynamic range is very limited and low capacitance values are used. A distributed resistance-capacitance network is a circuit having distributed series resistance and shunt capacitance elements. These circuits have fixed capacitive elements and cannot be integrated. The present invention provides a network with distributed resistance and capacitance characteristics that overcomes these shortcomings of the prior art.

Referring now to FIGS. 1 and 7, in accordance with the principles of the present invention, an electronically tunable distributed resistance-capacitance network 100 and an electronically tunable distributed inductive-capacitance network 100A, respectively. A cross-sectional view of is shown. The network 100 (100A) has two control lines 113 (113A) and 115 (115).
It can be tuned by the voltage applied to A). Resistance-Capacity Network 100 (Inductive-Capacity Network 100
A) is formed on the semiconductor substrate 112 (112A),
The semiconductor substrate 112 (112A) is the substrate 112 (11A).
2A) surface layer 114 (114
A). The surface layer 114 (114A) is less doped, has a higher resistivity than the semiconductor substrate, and acts as a region forming a space charge or depletion layer 120 (120A). Other insulating layer 116 (116
A) is added on top of the surface layer 114 (114A). At least one metal plate 118 (118A) is formed on the insulating layer 116 (116A). Metal plate 1
18 (118A) is a contact pin 113 (113A)
External contacts to the reactance components of network 100 (100A) via. Insulating layer 116 (116A) with metal plate together with contact
It may be formed on top to provide additional control over the distributed capacity of network 100 (100A). The resistance layer 126 (induction layer 126A) is the insulating layer 116 (116).
A) is formed on the metal plate 118 (118A) to provide a resistance element of the network 100 (100A). This resistive layer 126 (the inductive layer 126A) is any Nicol-Chr having the resistive properties desired by the requirements of the network 100 (100A).
Omium) material. Two metal plates 122A (123A) and 122B (123B)
Are formed on the resistive layer 126 (inductive layer 126A) to provide external contact with resistive (inductive) components of the network 100 (100A).

The insulating layer 116 (116A) is preferably 3
Zirconium titanate (ZrTiO 3) added with a thickness of 00 Å to 1000 Å.
₄ ), but a thickness of 100 Angstroms to 2 microns has been found suitable. The material used as the dielectric or insulating layer should have a much higher dielectric constant than that of the semiconductor. Examples of suitable materials that can be used for this purpose are shown in Table 1 below.

Table 1 Tantalum pentoxide Ta ₂ O ₅ Niobium pentoxide Nb ₂ O ₅ Zirconium oxide ZrO ₂ Titanium dioxide TiO ₂ Zirconium titanate ZrTiO ₄ Strontium titanate SrTiO ₃ Barium titanate BaTiO ₃ Lead titanate PbTiO _{3 3} barium tetratitanium Ba ₂ Ti ₉ O ₂₀ barium neodymium titanate BaNd ₂ Ti ₅ O ₁₄ lead zirconium titanate Pb (Zr, Ti) O ₃ lead lanthanum zirconium titanate (Pb, La) (Zr, Ti) O ₃ lithium niobate LiNbO ₃ strontium barium niobate (Sr, Ba) Nb ₂ O ₆

It is anticipated that oxides of other elements such as molybdenum, tungsten and vanadium can also be used alone or in combination with other elements.

When a suitable reverse bias is applied to the metal electrode 118 (118A), mobile minority charge carriers are attracted to the semiconductor insulator boundary 119 (119A) and the depletion layer 12 is depleted.
0 (120A), which extends into conductor 114 (114A) over a distance. This depletion layer (depl
the insulation layer 116 (116A).
Behaves as a variable width capacitor in electrical series with the capacitor formed by. These two series capacitances act to produce a net capacitance effect which is affected by changes in each individual capacitance. The electrode bias voltage is the depletion layer 120 (12
The width of 0A) is controlled from zero at the cumulative threshold to the maximum thickness at the inversion threshold, and thereby changes the overall capacity of the device. The insulating layer 116 (116A) acts to provide a space between the head electrode 118 (118A) and the depletion layer 120 (120A). Depletion layer 120 (1
20A) are input contacts 113 (113A) and 1
15 (115A), a transient layer formed when a bias voltage is applied to the capacitor.
yer). The depletion layer 120 (120A), and thus the distributed capacitance, decreases or disappears when the applied electric field is changed or removed. The depletion layer 120 (120A) is shown in the drawing as a distinct feature.
Should not be considered as a permanent mechanical feature of network 100 (100A). The theory of operation described here is similar to that found in the operation of metal-oxide-semiconductor capacitors.

At the inversion threshold voltage, sufficient charge carriers are attracted to the semiconductor boundaries, thus forming an inversion layer. When the voltage bias is increased, the width of the inversion layer increases until the maximum width is reached, beyond which the depletion layer cannot be increased substantially by increasing the electrode bias voltage. This maximum depletion width depends on the insulating layer 1
16 (116A) is determined by the concentration of the impurity dopant near the semiconductor surface deposited thereon. Phosphorus (p
hosphorous), antimony (antimon)
y), boron and arsenic (arseni)
It will be appreciated by those skilled in the art that dopants such as c) can be used with silicon substrates. Other semiconductor substrates, such as gallium arsenide, are also V in accordance with the present invention.
It can be used to form a VC.

As the doping decreases, the maximum depletion layer width increases and thus the minimum achievable capacitance decreases. The thickness of the lower doped surface layer can be chosen to be equal to or slightly greater than this maximum depletion width to minimize the series resistance of the device while maximizing capacitance change.

The formation of an improved voltage tunable resistance-capacitance network depends largely on the choice of materials that make up the insulating layer 116 (116A). Semiconductor depletion layer 120 (1
By choosing a material with a relative permittivity much greater than 20 A), a larger ratio of maximum-minimum distributed capacitance is obtained. The greater the dielectric constant of the insulating layer, the greater the capacitance ratio of capacitance per unit area to the thickness of a given insulator.

Many materials with very high dielectric constants have ferroelectric properties that are undesirable for high frequency devices.
Polarization for ferroelectric materials
Has a hysteresis loop, or memory, by which the remnant polarization remains after the applied bias voltage is removed. Therefore, the residual depletion layer also remains and the resulting capacitance ratio is limited. These materials are most commonly used in low frequency applications.

For high frequency applications, especially those used in radio transmission and reception, and more particularly those used in tunable high Q filters, low loss, non-ferroelectric insulating layers are required. .. Zirconium titanate (ZrTiO ₄ ) has a high relative dielectric constant (Kr is approximately 4).
It is one suitable non-ferroelectric material with a dielectric loss equal to 0) and low. For comparison, silicon dioxide (used for traditional MOS capacitors)
The relative permittivity of ioxide) is 3.9. The silicon depletion layer has a dielectric constant of 11.7 and the germanium depletion layer has a dielectric constant of 15.7. It can easily be seen that the dielectric constants of zirconium titanate and the aforementioned materials of Table 1 are much higher than that of silicon dioxide. Therefore,
Improved capacities with higher capacity ratios can be made.
Thin films of zirconium titanate include, but are not limited to, sputtering, vapor deposition, vapor phase growth (CV).
It can be formed by any of several techniques, including D), ion beam or plasma enhanced processes, sol-gel, and other solution chemistry processes.

By choosing an insulator with a relative dielectric constant much higher than the semiconductor depletion layer, a larger ratio between the maximum capacitance at zero depletion layer thickness and the minimum capacitance at the inversion threshold can be achieved. This strategy was largely overlooked as the theory of metal-insulator-semiconductor (MIS) capacitance was developed with silicon dioxide insulator on silicon. Since the maximum width of the depletion layer in the MIS capacitance is limited by the formation of the inversion layer, the capacitance change achievable with a low dielectric constant material such as silicon dioxide is P
It is less than or equal to what can be achieved by changing the depletion width near the N-junction.

Referring now to FIGS. 2 and 8, there are shown perspective views of networks 100 and 100A, respectively. In this figure, the network 100 (100
The various elements of A) are drawn to better illustrate the preferred embodiment of the invention. The presentation of this drawing is to enhance the understanding of each layer included in the configuration of the network 100 (100A). This does not mean that the present invention is limited in any form, directly or in any other form. Thin film contact 122A
The positions of (123A), 122B (123B), and 128 are not exact as shown. In contrast,
The location of the metal plate 118 (118A) contributes significantly to the distribution of the capacitive elements of the network 100 (100A). By placing these contacts in different locations, different performance goals can be met. In fact, more contact plates can be added to resistive layer 126 to provide additional external contact with network 100 (100A). Depletion region 120 (120
A) is shown to lie substantially beneath the metal layer 118 (118A). As the number of metal plates such as 118 (118A) increases to achieve a high degree of reactance distribution, the depletion region formed under each contact region acts as a separate shunt capacitance. Therefore,
Two plates 122A (123A) and 122B
(123B) represents the two ends of the resistor, while plate 188 (188A) is the network 100 (100A).
And a control input for a shunted electronically tunable capacitive element. This will become more apparent with reference to FIGS. 3 and 6.

Referring now to FIGS. 3 and 6, a symbolic representation and an equivalent electrical schematic 300 of the network 100 are shown, respectively. As seen in Figure 3,
Circuit 300 includes a distributed resistance element formed between contacts 124A and 124B. A wide dynamic range variable capacitance is shown coupled to the contact 113. When the control signal applied to the contact 113 in the electrical sense changes, the contacts 124A and 124A
The capacitance value seen during B also changes. This electronically controlled variable capacitance changes in relation to the series distributed resistance as shown by resistor 302. As can be seen from FIG. 6, the network 100 appears to be a number of series resistors and a number of capacitors shunted at each contact of the pair of resistors. This is very significant because it enables a variety of previously unrealizable electronic networks. Each of the shunt capacitors can be realized by a separate depletion region formed on the network 100 by strategically arranged contact plates.

Referring to FIG. 9, network 100A
The equivalent electrical schematic 300A of FIG. This figure shows the ideal case, ignoring dielectric and conductor losses. In operation, the network 100A has numerous series inductances and capacitances per unit length. The series inductance value per unit length is a function of the width (W) and the thickness (t) of the metal electrode. The shunt capacitance is defined by the following relationship assuming parallel plate capacitance and ignoring any peripheral capacitance. C _s = A ε _r1 ε _r2 / (t ₁ ε _r2 + t ₂ ε _r1 ) In this case, A = electrode area ε _r1 = relative permittivity of fixed insulator ε _r2 = relative permittivity of variable depletion layer 120 A t ₁ = insulation Thickness of layer 116A t ₂ = thickness of depletion layer 120A.

For a dielectric material having a relative dielectric constant of 1, the inductance per unit length (L) is constant regardless of the thickness of the depletion layer. The fluctuations of the capacitance and the effective dielectric constant affect the characteristic impedance and the propagation velocity of the transmission line in the following relationship. Z ₀ = (L / C _s ) ^1/2 V = c / (ε _reff ) ^{1/2 In} this case, Z ₀ is the characteristic impedance, V is the propagation velocity, and c is the velocity of light 3 × 10 ⁸ meters / sec and ε _reff is the effective permittivity of the transmission line structure.

Network 100A enables a variety of electronic circuits not previously possible. Each shunt capacitance can be realized by a separate depletion region formed above network 100A by strategically placed contact plates. Control over these capacitances is provided by the DC voltage (s) applied to one or many control inputs. The applications of this network are widespread. FIG. 10 shows one such application.

Referring now to FIG. 4, a schematic diagram of an exemplary circuit 400 that takes advantage of the distributed network 100 is shown. This circuit 400 is a bandpass filter. The bandpass filter 400 is shown here to illustrate the significance of the invention, as such a filter is a particularly difficult form to implement without the use of discrete components. Obviously, any other electronic circuit having an electronically tunable network would also benefit from this invention. Some such circuits are oscillators, filters of various characteristics, switches, etc. The particular choice of bandpass filters in the preferred embodiment is to demonstrate the advantages of the present invention in introducing the complexity involved in achieving the desired frequency and ideal performance for such filters. Filter 400 includes an amplifier 402 having an input V _in and an output V _out . The feedback loop is shown coupling a portion of V _out to the inverting input of amplifier 402. The coupling circuit in the feedback comprises the network 100 with a series resistor 404. By tuning the network 100, the center frequency of the filter 400 can be adjusted to a desired frequency. Since this tuning is done entirely electronically, it is not necessary to design a filter for each distinct operating band. Rather, the same filter can be used for any operating band because its operating frequency can be changed. Although the operating frequency of filter 400 is shown to be variable, other performance characteristics such as bandwidth and phase performance can be tuned by using network 100 in other strategic locations.

Referring to FIG. 10, a schematic diagram of an exemplary circuit 400A that incorporates the benefits of distributed network 100A is shown. This circuit 400A has a resistor 404A
And a variable transmission zero circuit that includes an oscillator 402A that is coupled to network 100A via a coupling that includes a DC blocking capacitance 406A. The oscillator 402A used in this embodiment represents the means for generating the input signal. This input signal can be fed to the input of the receiver via the antenna. A positive bias or otherwise the control voltage of network 100A is coupled through isolation resistor 410A. Resistor 410A provides radio frequency isolation between the bias line and network 100A. Bypass capacitor 414A further filters the unwanted RF signal, thereby helping to isolate RF from the bias line of network 100A. Network 100
A is coupled to load 416A via DC blocking capacitance 412A. The two capacitors 406A and 412A provide the necessary DC blocking at the two ports of the network 100A in order to minimize the input and output interference to the operating parameters of the network 100A controlled by the DC signal on the bias line. is there.

The operation of circuit 400A with a large number of zeros shows the frequency-amplitude transfer function of said circuit 400A.
Best understood by reference to signal diagram 602A of FIG. Clearly, some zeros 604A and 606A are obtained at the output of network 100A. The frequency of these valleys 604A and 606A can be easily changed by the bias voltage applied to the bias line. Generally, transmission zeros 604A and 606
The frequency of A is determined by the following equation. F _Resonance = c / {U _T (ε _reff ) ^1/2 }

It can be seen that an electronically tunable band-exclusion filter can be easily achieved with a variable exclusion (resonance) frequency. Zero tuning is completely electronic, so there is no need to design a filter for each distinct operating band. Rather, the same filter can be used for operation in any band due to its ability to change its operating frequency. Although the operating frequency of the filter using circuit 400A is shown as variable, other performance characteristics, such as bandwidth and phase performance, may be tuned by using network 100A at other strategic locations. it can.

Circuit 400 is shown here to illustrate the significance of the present invention because it is a particularly difficult form to implement without discrete components.
It will be appreciated that any other electronic circuit having an electronically tunable network could benefit from the present invention. Some such circuits are oscillators, filters of different characteristics, switches, etc. Variable transmission zeros are specifically described in the preferred embodiment to demonstrate the advantages of the invention in introducing the complexity involved in achieving the desired frequency and phase performance for such circuits.

Referring now to FIG. 5, there is shown a block diagram of receiver 500 in accordance with the principles of the present invention. Receiver 500 includes an antenna 502 through which a radio frequency signal is received and applied to filter 400 for filtering. The operating frequency of the filter 504 is controlled by the controller 516. Controller 5
16 is coupled to a memory block 514, which is connected to the controller 516 and the receiver 50.
Provides frequency information and other information related to zero operation. This information is converted in controller 516 and converted into a relative value used to command the operating frequency of filter 400. The filtered signal is amplified by RF amplifier 506 and applied to demodulator 508. Demodulator 508 uses the oscillator signal of oscillator 518. The oscillator 518 determines the operating frequency of the receiver 500. This oscillator 518 has 100 or 10
It includes a resistive-capacitive network or an inductive-capacitive network similar to 0A. As before, controller 516
Controls the operating frequency of oscillator 518 by controlling the bias voltage of its electronically tunable network. The output of the demodulator 508 is the audio filter 509.
Coupled to power amplifier 510 via. The filtering performance of the filter 509 is also controlled by the controller 516. The filtered signal at the output of filter 509 is amplified by amplifier 510 and applied to speaker 512. Filters 504 and 509 and oscillator 5
Information regarding the 18 operating frequencies is stored in memory 514 and optionally communicated to controller 516.

The ability to control the operating frequency of the filter 504 offers the possibility of integrating the entire receiver 500 into one integrated circuit and is the basis of a single chip receiver. The pain in manufacturing single-chip receivers can now be eliminated by eliminating the need for discrete components that could not be realized in semiconductors. Network 100 (100
The complete integration of A) makes it possible to electronically control the operation of many electronic circuits, which was not possible before. A significant advantage to this is that it eliminates the need to grow the receiver assembly to cover the desired operating range.

Although the focus of this embodiment is on a filter using a high permittivity integrated tunable network, it is sufficient to be able to implement various electronic circuits using the principles of the present invention. To be understood. Therefore, various filters such as low pass, high pass, band rejection, etc. can be implemented using these principles. Other circuits, such as simulation of a tunable inductor with capacitive components, are also within the operation of network 100 (100A).

[0032]

In summary, it has been shown that advantageous results are obtained from utilizing the structure of the present invention, these advantageous results including the integration of wide dynamic range tunable circuits, conductive grain boundaries and voids. Prevents contact between the head and bottom electrodes by means of, non-homogeneous and reduced field enhancement areas, low loss, high Q, improved film resistance, improved electrical breakdown, and improved storage charge characteristics. .. The examples set forth above are intended to be illustrative of the preferred embodiments of the present invention.
Accordingly, the invention is not to be limited except in accordance with the claims appended hereto.

[Brief description of drawings]

1 is a cross-sectional view of a resistor-capacitor network according to the present invention.

FIG. 2 is a perspective view of a resistor-capacitor network constructed in accordance with the present invention.

FIG. 3 is a circuit diagram showing electrical codes of the network of FIG.

FIG. 4 is a block diagram of an electronic circuit according to the present invention.

FIG. 5 is a block diagram showing a communication device incorporating a resistance-capacity network according to the present invention.

FIG. 6 is an electric circuit diagram showing an equivalent circuit of the network of FIG.

FIG. 7 is a cross-sectional view of an inductive-capacity network constructed in accordance with the present invention.

FIG. 8 is a perspective view of an inductive-capacity network constructed in accordance with the present invention.

9 is an electric circuit diagram showing an equivalent circuit of the network of FIG.

FIG. 10 is a block diagram of an electronic circuit according to the present invention.

11 is a signal waveform diagram showing an output signal of the circuit of FIG.

[Explanation of symbols]

100 Resistance-Capacitance Network 100A Induction-Capacity Network 112,112A Semiconductor Substrate 113,113A, 115,115A Control Line 114,114A Surface Layer 116,116A Insulation Layer 118,118A Metal Plate 119,119A Semiconductor Insulator Boundary 120,120A Depletion Layer 122A, 123A, 122B, 123B Thin film contact 124A, 124B Contact 126 Resistance layer 126A Induction layer

 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Robert E. Stengel, Northwest Twenty Five Way 6750, Fort Rauderdale, Florida 33309, USA

Claims (20)

[Claims] 1. An integrated distributed resistance-capacitance network comprising: a high dielectric constant electronically tunable semiconductor integrated capacitance; a resistive layer formed on the high dielectric constant semiconductor integrated capacitance; and An integrated distributed resistance-capacitor network comprising a plurality of electrical contact terminals coupled to a resistive layer. 2. The semiconductor has a layer of a semiconductive material having a resistivity higher than that of the semiconductor, a depletion layer formed in the layer of high resistivity, and the capacitor formed on the layer of high resistivity. Insulation layer,
The insulating layer includes a metal oxide having a dielectric constant higher than that of the semiconductor, and a conductive electrode formed on the dielectric layer.
The integrated network described in. 3. The integrated network according to claim 2, wherein the high dielectric constant semiconductor integrated capacitor comprises a zirconium titanate (ZrTiO ₄ ) integrated capacitor. 4. The integrated network of claim 2, wherein the insulating layer has a dielectric constant greater than 16. 5. The integrated network of claim 2, wherein the insulating layer is a low loss, non-ferroelectric insulator. 6. The integrated network of claim 2, wherein the dielectric constant of the insulating layer is greater than the dielectric constant of the high resistivity semiconductor material. 7. The material of the insulating layer is a metal oxide,
The metal is composed of at least first and second components selected from the group consisting of barium, lead, lithium, molybdenum, neodymium, niobium, strontium, tantalum, titanium, tungsten, vanadium, and zirconium. Item 3. The integrated network according to item 2. 8. An integrated electronic tunable distributed resistance-capacitance network comprising a semiconductor, a layer of semiconductive material having a higher resistivity than the semiconductor, wherein the higher resistivity layer comprises: A depletion layer formed, an insulating layer formed on the higher resistivity,
The insulating layer is made of a metal oxide having a dielectric constant higher than that of the semiconductor, a metal electrode formed on a part of the insulating layer, a resistance layer formed on the insulating layer, And an electronically tunable distributed resistance-capacitance network comprising a plurality of metal electrodes formed on the resistance layer. 9. An integrated distributed resistance-capacitance network having a control input, a common line and two signal lines, a control line plate coupled to the control input and a first line coupled to the common line. A high dielectric constant semiconductor integrated capacitor having a contact plate; a resistive layer formed on the integrated capacitor; and a plurality of contact terminals coupled to the resistive layer and providing two signal lines. An integrated distributed resistance-capacitance network characterized by: 10. A communication device comprising receiving means for receiving wireless communication signals, said receiving means comprising at least one integrated electronically tunable distributed resistance-capacitance network. The integrated network includes a high dielectric constant semiconductor integrated capacitor, a resistance layer formed on the high dielectric constant semiconductor integrated capacitor, and a plurality of contact terminals coupled to the resistance layer. A communication device characterized by. 11. An integrated distributed inductive-capacitance network comprising: a high dielectric constant electronically tunable semiconductor integrated capacitance; a conductive layer formed on the high dielectric constant semiconductor integrated capacitance; and An integrated distributed inductive-capacitance network comprising a plurality of electrical contact terminals coupled to a conductive layer. 12. The capacitor is a semiconductor and has a layer of a semiconductive material having a resistivity higher than that of the semiconductor, a depletion layer formed in the layer of high resistivity, the layer of high resistivity An insulating layer formed on the
12. The insulating layer comprises a metal oxide having a dielectric constant higher than that of the semiconductor, and an electrode formed on the dielectric layer.
The integrated network described in. 13. The integrated network of claim 12, wherein the high dielectric constant semiconductor integrated capacitor comprises a zirconium titanate (ZrTiO ₄ ) integrated capacitor. 14. The integrated network of claim 12, wherein the insulating layer has a dielectric constant greater than 16. 15. The integrated network of claim 12, wherein the insulating layer is a low loss, non-ferroelectric insulator. 16. The integrated network of claim 12, wherein the dielectric constant of the insulating layer is greater than the dielectric constant of the high resistivity semiconductor material. 17. The material of the insulating layer is a metal oxide, and the metal is barium, lead, lithium, molybdenum,
13. The integrated network of claim 12, comprising at least first and second components selected from the group consisting of neodymium, niobium, strontium, tantalum, titanium, tungsten, vanadium, and zirconium. 18. An integrated electronically tunable distributed inductive-capacitance network comprising a semiconductor having a layer of semiconducting metal having a higher resistivity than the semiconductor, said higher resistivity layer. A depletion layer formed on the insulating layer formed on the high resistivity layer,
The insulating layer is made of a metal oxide having a dielectric constant higher than that of the semiconductor, a metal electrode formed on a part of the insulating layer, a conductive layer formed on the insulating layer, And an integrated electronically tunable distributed inductive-capacitance network comprising a plurality of metal electrodes formed on the conductive layer. 19. An integrated distributed inductive-capacitance network having a control input, a common line and two signal lines, a control line plate coupled to the control input and a first coupled to the common line. A high dielectric constant semiconductor integrated capacitor having a contact plate; a conductive layer formed on the integrated capacitor; and a plurality of contact terminals coupled to the conductive layer and providing two signal lines. An integrated distributed induction-capacity network characterized by: 20. A communication device comprising receiving means for receiving wireless communication signals, said receiving means comprising at least one integrated electronically tunable distributed inductive-capacitance network. The integrated network includes a semiconductor integrated capacitor having a high dielectric constant, a conductive layer formed on the semiconductor integrated capacitor having a high dielectric constant, and a plurality of contact terminals coupled to the conductive layer. A communication device characterized by: