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JPH0521415A - Semiconductor processor - Google Patents

Semiconductor processor

Info

Publication number
JPH0521415A
JPH0521415A JP17259791A JP17259791A JPH0521415A JP H0521415 A JPH0521415 A JP H0521415A JP 17259791 A JP17259791 A JP 17259791A JP 17259791 A JP17259791 A JP 17259791A JP H0521415 A JPH0521415 A JP H0521415A
Authority
JP
Japan
Prior art keywords
processing
tank
liquid
processing liquid
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17259791A
Other languages
Japanese (ja)
Other versions
JP3099907B2 (en
Inventor
Yuji Fukazawa
澤 雄 二 深
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP03172597A priority Critical patent/JP3099907B2/en
Publication of JPH0521415A publication Critical patent/JPH0521415A/en
Application granted granted Critical
Publication of JP3099907B2 publication Critical patent/JP3099907B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To continue the operation of a pump successively and to see that a semiconductor is not exposed to air in the middle of processing by circulating first processing liquid in a second circulation system when the processing by the first processing liquid is finished, and replacing the first processing liquid in a processing bath with the second processing liquid in this condition. CONSTITUTION:When the processing by HF is finished, the supply of HF to a processing bath by a flow control valve 209 is stopped, and all HF circulates to a circulation pump 103, a filter 104, a flow control valve 209, an auxiliary bath supply line 212, and an auxiliary bath 206. Next, HF is all let fall to the auxiliary bath 106 by opening a drain port 106, and then pure water is supplied form a pure water supply port 210 to clean a semiconductor wafer; with which the processing is finished. After that, the semiconductor wafer is pulled up, and pure water 107 is drained through a drain line 204. Furthermore, the processing liquid 107 inside the processing bath 101 is made HF again through the control valve 209 to provide for new processing.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体処理装置に関
し、特に、複数の処理液により半導体ウェハーを処理す
る半導体処理装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor processing apparatus, and more particularly to a semiconductor processing apparatus for processing a semiconductor wafer with a plurality of processing solutions.

【0002】[0002]

【従来の技術】図3は従来の半導体処理装置の概略図で
ある。図3に示すように、処理槽101に半導体ウェハ
ーを処理するための処理液107が収納されている。処
理槽101からあふれた処理液は、回収部102で回収
され、循環ポンプ103によってフィルタ104を介し
てダスト等を除去された後、処理液供給口105から再
び処理槽101に戻される。一方、処理槽101内の処
理液107は、排水口106から排出される。そして、
半導体ウェハーを水洗するための純水113は水洗槽1
10に収容されている。水洗槽110には純水供給口1
12から純水が供給され、あふれた純水113は排水口
111から排出される。
2. Description of the Related Art FIG. 3 is a schematic diagram of a conventional semiconductor processing apparatus. As shown in FIG. 3, a processing bath 107 contains a processing solution 107 for processing a semiconductor wafer. The processing liquid overflowing from the processing bath 101 is recovered by the recovery unit 102, dust and the like are removed by the circulation pump 103 through the filter 104, and then returned to the processing bath 101 from the processing liquid supply port 105. On the other hand, the processing liquid 107 in the processing tank 101 is discharged from the drain port 106. And
Pure water 113 for washing semiconductor wafers is washed with water 1
It is housed in 10. The washing tank 110 has a pure water supply port 1
Pure water is supplied from 12, and the overflowed pure water 113 is discharged from the drain port 111.

【0003】以上述べたような構成において、次にその
動作を説明する。
The operation of the above-described structure will be described below.

【0004】薬液処理対象としての図示しない半導体ウ
ェハーは、処理槽101内の処理液107に所定時間浸
漬され、あらかじめ定められた半導体プロセス上の薬液
処理を受ける。処理槽101内の処理液107は、回収
部102から循環ポンプ103、フィルタ104、処理
液供給口105を経て処理槽101に循環する。この循
環によって処理液はダスト除去され、常にクリーンな状
態に保たれる。処理槽101での処理を終了した半導体
ウェハーは、処理槽101から引き上げられ、水洗槽1
01に移される。
A semiconductor wafer (not shown) to be treated with a chemical liquid is dipped in the treatment liquid 107 in the treatment tank 101 for a predetermined time and subjected to a predetermined chemical treatment in the semiconductor process. The treatment liquid 107 in the treatment tank 101 circulates from the recovery unit 102 to the treatment tank 101 via the circulation pump 103, the filter 104, and the treatment liquid supply port 105. By this circulation, the treatment liquid is dedusted and always kept in a clean state. The semiconductor wafer that has been processed in the processing tank 101 is pulled out from the processing tank 101 and washed in the washing tank 1.
Moved to 01.

【0005】ウェハーはこの水洗槽110内で純水11
3によりオーバーフロー洗浄処理される。
The wafer is washed with pure water 11 in this washing tank 110.
3, the overflow cleaning process is performed.

【0006】処理槽101内の処理液107を別の処理
液に取り替えるには、循環ポンプ103を一旦停止し、
処理液107を排水し、新たな処理液を槽101内に注
入する。この後に再び循環ポンプ103を作動させ、処
理液を循環させる。
In order to replace the processing solution 107 in the processing tank 101 with another processing solution, the circulation pump 103 is temporarily stopped and
The treatment liquid 107 is drained and a new treatment liquid is poured into the bath 101. After this, the circulation pump 103 is operated again to circulate the processing liquid.

【0007】[0007]

【発明が解決しようとする課題】以上述べたように、従
来の半導体処理装置は、処理槽101と水洗槽110の
2つの槽の間を半導体ウェハーを移動させて処理と水洗
を行なうように構成されていた。このため、処理槽10
1から水洗槽110に半導体ウェハーを移動する間に、
ウェハーが大気中でのダストに汚染されたり、移動中に
処理液が垂れて処理液むらができたりする。例えば、そ
の処理液がエッチング液であるときには、ウェハー面に
エッチングむらができる。
As described above, the conventional semiconductor processing apparatus is constructed such that the semiconductor wafer is moved between the two tanks, the processing tank 101 and the water washing tank 110, to perform the processing and the water washing. It had been. Therefore, the processing tank 10
While transferring the semiconductor wafer from 1 to the washing tank 110,
The wafer may be contaminated with dust in the atmosphere, or the processing solution may drop during the transfer, resulting in uneven processing solution. For example, when the processing liquid is an etching liquid, uneven etching may occur on the wafer surface.

【0008】更に、処理槽101内の処理液を替える時
に、循環ポンプ103を停止させたり再起動させたりす
ることの繰り返しは、フィルタ104に加わる圧力の変
動させる。これに伴ない、捕獲したダストが再び処理槽
101に供給される結果をひきおこし、パーティクルの
捕獲機能を大幅に低下させる原因となっていた。
Further, when the processing liquid in the processing tank 101 is changed, the repetition of stopping and restarting the circulation pump 103 changes the pressure applied to the filter 104. Along with this, the result is that the captured dust is supplied to the processing tank 101 again, which causes a significant decrease in the particle capturing function.

【0009】本発明は、上記に鑑みてなされたもので、
その目的は、連続的にポンプの運転を継続させるととも
に処理の途中で半導体ウェハーを空気中にさらさないよ
うにした半導体処理装置を提供することにある。
The present invention has been made in view of the above,
An object of the invention is to provide a semiconductor processing apparatus in which the pump is continuously operated and the semiconductor wafer is not exposed to the air during the processing.

【0010】[0010]

【課題を解決するための手段】本発明の第1の装置は、
半導体ウェハーを収納する処理槽と、ポンプと、ろ過フ
ィルタと、の間で前記ウェハーを処理する第1の処理液
を循環させる第1の循環系と、前記第1の処理液を前記
ポンプと前記ろ過フィルタとの間で、前記処理槽をバイ
パスして、循環させる第2の循環系と、前記第1の循環
系での前記第1の処理液の循環を停止させ、前記第2の
循環系での循環のみを継続させ、この状態で前記処理槽
中の前記第1の処理液を外部に排出し、この処理槽中に
第2の処理液を流入させる、第1の処理液置換手段と、
前記処理槽中の前記第2の処理液を外部に排出し、前記
第2の循環系中の前記第1の処理液を前記処理槽中に流
入させて、前記第1の循環系に再び前記第1の処理液を
循環させる、第2の処理液置換手段と、を備えるものと
して構成される。
The first device of the present invention comprises:
A first circulation system that circulates a first processing liquid that processes the wafer between a processing tank that stores semiconductor wafers, a pump, and a filtration filter, and the first processing liquid that is supplied to the pump and the pump. A second circulation system that bypasses the treatment tank to circulate between the filtration filter and the circulation of the first treatment liquid in the first circulation system, and the second circulation system. In the state, the first treatment liquid is discharged to the outside, and the second treatment liquid is caused to flow into the treatment tank. ,
The second processing liquid in the processing tank is discharged to the outside, the first processing liquid in the second circulation system is allowed to flow into the processing tank, and the first circulation system is again supplied with the second processing liquid. And a second processing liquid replacement means for circulating the first processing liquid.

【0011】本発明の第2の装置は、前記第1の装置に
おいて、前記第1の処理液の、前記第1の循環系を流れ
る量と前記第2の循環系を流れる量の比を任意に調節可
能な、流量比較調節手段をさらに備える。
In a second apparatus of the present invention, in the first apparatus, the ratio of the amount of the first processing liquid flowing through the first circulation system to the amount of flowing through the second circulation system is arbitrary. And a flow rate comparison and adjustment means that is adjustable.

【0012】本発明の第3の装置は、前記第1又は第2
の装置において、前記第1又は第2の前記第2の循環系
は、前記第1の処理液を収納する予備の槽を備えるもの
として構成される。
A third device of the present invention is the above-mentioned first or second device.
In the above apparatus, the first or second second circulation system is configured to include a preliminary tank for accommodating the first processing liquid.

【0013】[0013]

【作用】第1の循環系中を第1の処理液が循環している
間に、処理槽中で半導体ウェハーを処理する。第1の処
理液による処理が終ったら、第1の処理液を第2の循環
系中を循環させ、第2の循環系中には流れないようにす
る。この状態で処理槽中の第1の処理液を第2の処理液
と置換する。第2の処理液によるウェハーの処理が終っ
たら、処理槽中から第2の処理液を排出する。この後、
第2の循環系中を循環していた第1の処理液を再び第1
の循環系中にも注入、循環させる。
The semiconductor wafer is processed in the processing tank while the first processing liquid is circulating in the first circulation system. After the treatment with the first treatment liquid is completed, the first treatment liquid is circulated in the second circulation system and is prevented from flowing into the second circulation system. In this state, the first processing liquid in the processing tank is replaced with the second processing liquid. When the processing of the wafer with the second processing liquid is completed, the second processing liquid is discharged from the processing bath. After this,
The first processing liquid circulated in the second circulatory system is returned to the first processing liquid again.
Inject and circulate in the circulation system.

【0014】[0014]

【実施例】以下、図面を参照しながら本発明の実施例を
説明する。
Embodiments of the present invention will be described below with reference to the drawings.

【0015】図1は本発明の一実施例に係る半導体処理
装置の概略図である。図1において示すように、半導体
ウェハーを処理するための処理槽101には、処理液1
07が収容されている。処理槽101には、回収部10
2の排水口203と、処理槽101底面の排水口106
を有する。いずれの排水口203、106も、予備槽2
06に連通すると共に排水ライン204に接続されてい
る。予備槽206中の処理液は、循環ポンプ103から
ろ過フィルタ104を通じて、流量コントロールバルブ
209に達する。この流量コントロールバルブ209の
作用により、処理液の一部は処理槽供給ライン213を
通じて処理槽101に戻され、残りは予備槽供給ライン
212を通じて予備槽206に循環する。流量コントロ
ールバルブ209はフィルタ104からの液を処理槽供
給ライン213と、予備槽供給ライン212と、任意の
割合で流量の割り振りする。もちろん、どちらか一方に
のみ流れを切り替えることも可能である。そして、通常
の場合は、約半分づつに分けて循環させられている。ま
た、処理槽101には、処理槽供給ライン213ほか
に、純水供給ライン210と新液供給ライン215が設
けられており、洗浄処理用の純水や別の処理用の新液を
自由に供給することが可能である。
FIG. 1 is a schematic diagram of a semiconductor processing apparatus according to an embodiment of the present invention. As shown in FIG. 1, a processing bath 1 for processing a semiconductor wafer has a processing solution 1
07 are accommodated. In the processing tank 101, the recovery unit 10
2 drainage port 203 and the drainage port 106 on the bottom of the processing tank 101
Have. Any of the drainage ports 203 and 106 has a reserve tank 2
06 and is connected to the drain line 204. The processing liquid in the preliminary tank 206 reaches the flow rate control valve 209 from the circulation pump 103 through the filtration filter 104. By the action of the flow rate control valve 209, a part of the processing liquid is returned to the processing tank 101 through the processing tank supply line 213, and the rest is circulated to the preliminary tank 206 through the preliminary tank supply line 212. The flow rate control valve 209 allocates the flow rate of the liquid from the filter 104 to the processing tank supply line 213 and the preliminary tank supply line 212 at an arbitrary ratio. Of course, it is also possible to switch the flow to only one of them. And in the normal case, they are circulated in about half. In addition to the treatment tank supply line 213, the treatment tank 101 is also provided with a pure water supply line 210 and a new solution supply line 215, so that pure water for cleaning processing and new solution for another processing can be freely supplied. It is possible to supply.

【0016】以上述べたような構成において、半導体ウ
ェハーをふっ酸水溶液(HF)で薬液処理し、次に純水
により洗浄処理する場合を例にとってその動作を説明す
る。
The operation of the semiconductor wafer having the above-described structure will be described by taking a case where the semiconductor wafer is chemically treated with an aqueous solution of hydrofluoric acid (HF) and then washed with pure water.

【0017】処理槽101には処理液107としてHF
が満たされている。この液107の中に図示しないキャ
リアにセットされた半導体ウェハーが所定時間浸漬さ
れ、あらかじめ定められた薬液処理を受けている。この
場合において、処理槽101からオーバーフローした処
理液(HF)は、回収部102から排水口203、予備
槽供給ライン205を通じて予備槽206に落ちる。予
備槽206の処理液(HF)は、循環ポンプ103から
フィルタ104を経てパーティクル除去などのフィルタ
処理を受け、流量コントロールバルブ209を介してそ
の一部が処理槽供給ライン213を通じて処理液107
に循環する。そして、流量コントロールバルブ209で
分けられた処理液の残りは予備槽供給ライン212を通
じて予備槽206に循環する。
In the processing tank 101, HF is used as the processing liquid 107.
Is satisfied. A semiconductor wafer set on a carrier (not shown) is dipped in the liquid 107 for a predetermined time and is subjected to a predetermined chemical treatment. In this case, the processing liquid (HF) overflowing from the processing tank 101 falls from the recovery unit 102 into the auxiliary tank 206 through the drain port 203 and the auxiliary tank supply line 205. The treatment liquid (HF) in the preliminary tank 206 is subjected to a filter treatment such as particle removal from the circulation pump 103 through the filter 104, and a part of the treatment liquid 107 is passed through the treatment tank supply line 213 through the flow rate control valve 209.
Circulate to. Then, the rest of the processing liquid divided by the flow rate control valve 209 is circulated to the preliminary tank 206 through the preliminary tank supply line 212.

【0018】処理液(HF)による処理を終了すると、
流量コントロールバルブ209により処理槽101への
処理液の供給は停止させられ、全ての処理液が予備槽供
給ライン212から予備槽206に循環する。その結
果、予備槽206内の処理液は、循環ポンプ103、フ
ィルタ104、流量コントロールバルブ209、予備槽
供給ライン212及び予備槽206へと循環することに
なる。
When the treatment with the treatment liquid (HF) is completed,
The supply of the processing liquid to the processing bath 101 is stopped by the flow rate control valve 209, and all the processing liquid is circulated from the preliminary bath supply line 212 to the preliminary bath 206. As a result, the processing liquid in the preliminary tank 206 is circulated to the circulation pump 103, the filter 104, the flow rate control valve 209, the preliminary tank supply line 212, and the preliminary tank 206.

【0019】次に、処理槽101の排水口106を開け
て処理液107を全て予備槽206に落とす。ちなみ
に、処理液107を以後使用しない場合は、排液を排水
ライン204から排出する。処理槽101からの処理液
107の排液後は、純水供給口210から純水を供給し
て半導体ウェハーを洗浄し、処理を終了する。
Next, the drainage port 106 of the processing tank 101 is opened to drop all the processing liquid 107 into the preliminary tank 206. Incidentally, when the treatment liquid 107 is not used thereafter, the drainage liquid is drained from the drain line 204. After draining the processing liquid 107 from the processing tank 101, pure water is supplied from the pure water supply port 210 to wash the semiconductor wafer, and the processing is completed.

【0020】しかる後、半導体ウェハーを引上げ、排水
ライン204を通じて処理槽101内の処理液(純水)
107を排水する。さらに、流量コントロールバルブ2
09を通じてそれまで予備槽206を介して循環してい
たHFを処理槽供給ライン213に導出することによ
り、処理槽101内の処理液107を再びHFとし、新
たな処理に備える。
Thereafter, the semiconductor wafer is pulled up and the treatment liquid (pure water) in the treatment tank 101 is passed through the drain line 204.
Drain 107. Furthermore, the flow control valve 2
The HF, which has been circulated through the preparatory tank 206 through 09, is led to the processing tank supply line 213, so that the processing liquid 107 in the processing tank 101 becomes HF again to prepare for new processing.

【0021】以上のような動作の結果、従来半導体ウェ
ハーを薬液処理と洗浄処理の間で槽間移動させることに
伴い発生していた、ウェハーに加わる振動という問題
や、ウェハー表面の疎水性のためにウェハー表面が活性
となりダストの付着が生じやすいという問題が解消す
る。さらに半導体ウェハーを槽間移動させないため、ク
リーンなウェハー表面をキープすることができるように
なる。また、処理液の交換に伴うポンプの停止や再起動
が不要となるため、処理液中のパーティクルを除去する
ためのフィルタへの圧力変動がなくなり、処理液のクリ
ーン度を向上することができる。
As a result of the above-mentioned operation, the problem of vibration applied to the wafer and the hydrophobicity of the wafer surface, which have conventionally been caused by moving the semiconductor wafer between the baths between the chemical treatment and the cleaning treatment. In addition, the problem that the wafer surface becomes active and dust is likely to adhere is solved. Further, since the semiconductor wafer is not moved between the baths, it is possible to keep a clean wafer surface. Further, since it is not necessary to stop or restart the pump due to the exchange of the processing liquid, pressure fluctuations on the filter for removing particles in the processing liquid are eliminated, and the cleanliness of the processing liquid can be improved.

【0022】図2は、図1の処理槽101の変形例を示
す。即ち、図2は枚葉式処理装置の一部を示す。図2に
おいて示すように、処理槽101内の処理液107にウ
ェハー304が浸漬されており、ここに供給口303か
ら処理液が供給され排水口106から排液される。供給
系、排液系は図1と同様である。
FIG. 2 shows a modification of the processing tank 101 of FIG. That is, FIG. 2 shows a part of the single-wafer processing apparatus. As shown in FIG. 2, the wafer 304 is immersed in the treatment liquid 107 in the treatment tank 101, and the treatment liquid is supplied from the supply port 303 to the wafer 304 and discharged from the drain port 106. The supply system and drainage system are the same as in FIG.

【0023】[0023]

【発明の効果】以上述べたように、本発明の半導体処理
装置によれば、ポンプを停止させることなく処理槽内の
処理液の切り替えを可能としたため、ダストの除去能力
を維持することが可能となり、また半導体ウェハーを薬
液処理と洗浄処理の間で移動する必要がないので、移動
に伴う半導体ウェハーへのダストの付着や液垂れを防止
できるので品質やプロセス信頼性の向上を計ることがで
き、更に1つの処理槽で薬液処理と洗浄処理ができるた
め装置を小型化できる。
As described above, according to the semiconductor processing apparatus of the present invention, since it is possible to switch the processing liquid in the processing tank without stopping the pump, it is possible to maintain the dust removal capability. Moreover, since it is not necessary to move the semiconductor wafer between the chemical treatment and the cleaning treatment, it is possible to prevent dust adhesion and liquid dripping on the semiconductor wafer due to the movement, so that the quality and process reliability can be improved. Further, since the chemical solution treatment and the cleaning treatment can be performed in one treatment tank, the device can be downsized.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例に係る半導体処理装置の概略
構成図。
FIG. 1 is a schematic configuration diagram of a semiconductor processing apparatus according to an embodiment of the present invention.

【図2】図1の構成の処理槽の他の例を示す部分概略構
成図。
FIG. 2 is a partial schematic configuration diagram showing another example of the processing tank having the configuration of FIG.

【図3】従来の半導体処理装置の概略構成図。FIG. 3 is a schematic configuration diagram of a conventional semiconductor processing apparatus.

【符号の説明】[Explanation of symbols]

101 処理槽 102 回収部 103 循環ポンプ 104 フィルタ 105 処理液供給口 106 排水口 107 処理液 110 水洗槽 111 排水口 112 純水供給口 113 純水 203 排水口 204 排水ライン 205 予備槽供給ライン 206 予備槽 209 流量コントロールバルブ 210 純水供給口 212 予備槽供給ライン 213 処理槽供給ライン 215 新液供給ライン 303 供給口 304 ウェハー 101 processing tank 102 Collection Department 103 Circulation pump 104 filters 105 Processing liquid supply port 106 drain 107 treatment liquid 110 wash tank 111 drain 112 Pure water supply port 113 pure water 203 drain 204 drainage line 205 Spare tank supply line 206 Spare tank 209 Flow control valve 210 Pure water supply port 212 Spare tank supply line 213 Processing tank supply line 215 New liquid supply line 303 Supply port 304 wafer

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】半導体ウェハーを収納する処理槽と、ポン
プと、ろ過フィルタと、の間で前記ウェハーを処理する
第1の処理液を循環させる第1の循環系と、 前記第1の処理液を前記ポンプと前記ろ過フィルタとの
間で、前記処理槽をバイパスして、循環させる第2の循
環系と、 前記第1の循環系での前記第1の処理液の循環を停止さ
せ、前記第2の循環系での循環のみを継続させ、この状
態で前記処理槽中の前記第1の処理液を外部に排出し、
この処理槽中に第2の処理液を流入させる、第1の処理
液置換手段と、 前記処理槽中の前記第2の処理液を外部に排出し、前記
第2の循環系中の前記第1の処理液を前記処理槽中に流
入させて、前記第1の循環系に再び前記第1の処理液を
循環させる、第2の処理液置換手段と、 を備えることを特徴とする半導体処理装置。
1. A first circulation system for circulating a first treatment liquid for treating the wafer between a treatment tank for accommodating semiconductor wafers, a pump, and a filtration filter, and the first treatment liquid. A second circulation system that circulates the treatment tank by bypassing the treatment tank between the pump and the filtration filter, and stops the circulation of the first treatment liquid in the first circulation system; Only the circulation in the second circulation system is continued, and in this state, the first treatment liquid in the treatment tank is discharged to the outside,
A first processing liquid replacement means for causing the second processing liquid to flow into the processing tank, the second processing liquid in the processing tank being discharged to the outside, and the second processing liquid in the second circulation system being discharged. A second processing liquid replacement means for causing the first processing liquid to flow into the processing bath and to circulate the first processing liquid again in the first circulation system. apparatus.
【請求項2】前記第1の処理液の、前記第1の循環系を
流れる量と前記第2の循環系を流れる量の比を任意に調
節可能な、流量比較調節手段をさらに備える、請求項1
記載の装置。
2. A flow rate comparison and adjustment means capable of arbitrarily adjusting the ratio of the amount of the first processing liquid flowing through the first circulation system to the amount of the first processing liquid flowing through the second circulation system. Item 1
The described device.
【請求項3】前記第2の循環系は、前記第1の処理液を
収納する予備の槽を備える、請求項1又は2記載の装
置。
3. The apparatus according to claim 1, wherein the second circulation system is provided with a preliminary tank for accommodating the first processing liquid.
JP03172597A 1991-07-12 1991-07-12 Semiconductor processing equipment Expired - Fee Related JP3099907B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP03172597A JP3099907B2 (en) 1991-07-12 1991-07-12 Semiconductor processing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03172597A JP3099907B2 (en) 1991-07-12 1991-07-12 Semiconductor processing equipment

Publications (2)

Publication Number Publication Date
JPH0521415A true JPH0521415A (en) 1993-01-29
JP3099907B2 JP3099907B2 (en) 2000-10-16

Family

ID=15944805

Family Applications (1)

Application Number Title Priority Date Filing Date
JP03172597A Expired - Fee Related JP3099907B2 (en) 1991-07-12 1991-07-12 Semiconductor processing equipment

Country Status (1)

Country Link
JP (1) JP3099907B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002100605A (en) * 2000-07-19 2002-04-05 Dainippon Screen Mfg Co Ltd Substrate-processing apparatus
KR100489652B1 (en) * 1998-07-18 2005-08-01 삼성전자주식회사 Hybrid wafer immersion apparatus for semiconductor device manufacturing
JP2008030022A (en) * 2006-06-29 2008-02-14 Yuken Industry Co Ltd Cleaning device and cleaning unit including the cleaning device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100489652B1 (en) * 1998-07-18 2005-08-01 삼성전자주식회사 Hybrid wafer immersion apparatus for semiconductor device manufacturing
JP2002100605A (en) * 2000-07-19 2002-04-05 Dainippon Screen Mfg Co Ltd Substrate-processing apparatus
JP2008030022A (en) * 2006-06-29 2008-02-14 Yuken Industry Co Ltd Cleaning device and cleaning unit including the cleaning device

Also Published As

Publication number Publication date
JP3099907B2 (en) 2000-10-16

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