JPH05206051A - Ion implantation monitor method - Google Patents
Ion implantation monitor methodInfo
- Publication number
- JPH05206051A JPH05206051A JP1425192A JP1425192A JPH05206051A JP H05206051 A JPH05206051 A JP H05206051A JP 1425192 A JP1425192 A JP 1425192A JP 1425192 A JP1425192 A JP 1425192A JP H05206051 A JPH05206051 A JP H05206051A
- Authority
- JP
- Japan
- Prior art keywords
- ion implantation
- ions
- thin film
- implanted
- acceleration energy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005468 ion implantation Methods 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 14
- 150000002500 ions Chemical class 0.000 claims abstract description 18
- 230000001133 acceleration Effects 0.000 claims abstract description 14
- 239000010409 thin film Substances 0.000 claims description 20
- 238000012544 monitoring process Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052710 silicon Inorganic materials 0.000 abstract description 11
- 239000010703 silicon Substances 0.000 abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はイオン注入技術に関する
ものである。FIELD OF THE INVENTION The present invention relates to an ion implantation technique.
【０００２】[0002]
【従来の技術】従来、半導体基板へのイオン注入は、半
導体基板上に形成した均一な厚さの薄膜（二酸化シリコ
ン、窒化シリコン、酸化アルミニウム等）を介して行っ
ている。2. Description of the Related Art Conventionally, ion implantation into a semiconductor substrate is performed through a thin film (silicon dioxide, silicon nitride, aluminum oxide, etc.) having a uniform thickness formed on the semiconductor substrate.
【０００３】そして、アニール後に薄膜を除去して四探
針法等によって抵抗率ρを測定するか、または、ＭＯＳ
（Ｍｅｔａｌ ｏｎ ＳｉＯ2 ）等を形成することによ
りイオン注入量をモニターしている。Then, after annealing, the thin film is removed and the resistivity ρ is measured by a four-point probe method or the like, or
The amount of ion implantation is monitored by forming (Metal on SiO 2 ).
【０００４】[0004]
【発明が解決しようとする課題】ところが、イオン注入
装置のエクストラクション（Ｅｘｔｒａｃｔｉｏｎ）部
や加速部における不要放電や、オペレータの設定ミス等
により、イオンの加速エネルギーの変動（具体的には加
速電圧の変動）が生じることがある。However, variations in the acceleration energy of the ions (specifically, the acceleration voltage Fluctuation) may occur.
【０００５】その場合、薄膜の厚さが均一なために、加
速エネルギーの微小変動によるイオン注入量のばらつき
を的確にモニターすることができなかった。そのため、
イオン注入量をモニターした時点では規格内に収まって
いるとされたシリコンウエーハが、製造の最終工程にお
いて規格外れであることが判明し、イオン注入量モニタ
ー後の工程が全て無駄となることが多かった。In this case, since the thickness of the thin film is uniform, it is not possible to accurately monitor the variation of the ion implantation amount due to the minute fluctuation of the acceleration energy. for that reason,
A silicon wafer that was said to be within the standard at the time of monitoring the ion implantation amount was found to be out of specification in the final process of manufacturing, and all the steps after the ion implantation amount monitoring were often wasted. It was
【０００６】本発明は上記問題点を解決するためになさ
れたものであって、簡単な方法によってイオン注入にお
けるイオンの加速エネルギーの変動を的確に判定するこ
とができるモニター方法を提供することにある。The present invention has been made to solve the above problems, and it is an object of the present invention to provide a monitoring method capable of accurately determining fluctuations in ion acceleration energy during ion implantation by a simple method. ..
【０００７】[0007]
【課題を解決するための手段】半導体基板上の任意な位
置にモニター領域を形成し、そのモニター領域に薄膜を
形成した後、その薄膜を介してイオンを注入し、イオン
注入量を測定してイオンの加速エネルギーを判定するイ
オン注入モニター方法において、前記薄膜の厚さを階段
状に変化させて形成した後、モニター領域にイオンを注
入するようにした。A monitor region is formed at an arbitrary position on a semiconductor substrate, a thin film is formed in the monitor region, ions are implanted through the thin film, and the ion implantation amount is measured. In the ion implantation monitoring method for determining the acceleration energy of ions, the thickness of the thin film is changed stepwise, and then the ions are implanted into the monitor region.
【０００８】[0008]
【作用】従って、本発明によれば、複数の厚さの薄膜に
おいて実際のイオン注入量を測定できるため、単一の厚
さの薄膜においてイオン注入量を測定するよりも加速エ
ネルギーの変動を的確に判定することができる。Therefore, according to the present invention, since the actual ion implantation amount can be measured in thin films having a plurality of thicknesses, fluctuations in acceleration energy are more accurate than in measuring the ion implantation amount in a thin film having a single thickness. Can be determined.
【０００９】[0009]
【実施例】以下、本発明を具体化した一実施例を図１，
図２に従って説明する。図１はシリコンウエハ１０にお
けるイオン注入モニター領域１１の断面図である。イオ
ン注入モニター領域１１においては、シリコンウエハ１
０上に形成した薄膜１２の厚さを階段状に変化させてい
る。すなわち、薄膜１２の厚さが均一な４つの領域Ａ〜
Ｄを形成する。尚、薄膜１２の厚さを階段状に変化させ
て形成する方法は公知のエッチング法による。また、各
領域Ａ〜Ｄにおける薄膜１２の厚さは、シリコンウエハ
１０に所要量のイオンが注入されるように、注入するイ
オン種および加速エネルギーに応じて適宜に選択してい
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment embodying the present invention is shown in FIG.
It will be described with reference to FIG. FIG. 1 is a sectional view of an ion implantation monitor region 11 in a silicon wafer 10. In the ion implantation monitor area 11, the silicon wafer 1
The thickness of the thin film 12 formed on the surface is changed stepwise. That is, the four regions A to
Form D. A known etching method is used to form the thin film 12 by changing its thickness stepwise. Further, the thickness of the thin film 12 in each of the regions A to D is appropriately selected according to the ion species to be implanted and the acceleration energy so that a required amount of ions are implanted into the silicon wafer 10.
【００１０】図２はシリコンウエハ１０の平面図であ
る。イオン注入モニター領域１１はシリコンウエハ１０
の外周部（本実施例では５ｍｍ）を除く内部の任意な位
置に形成される。その大きさは充分な測定精度を得られ
る程度とする（本実施例では２０×２０ｍｍ）。FIG. 2 is a plan view of the silicon wafer 10. The ion implantation monitor area 11 is a silicon wafer 10.
Is formed at an arbitrary position inside the outer peripheral portion (5 mm in this embodiment). The size is set so that sufficient measurement accuracy can be obtained (20 × 20 mm in this embodiment).
【００１１】このように形成したイオン注入モニター領
域１１に対してイオン注入を行い、各領域Ａ〜Ｄのイオ
ン注入量を測定する。すなわち、半導体製造プロセスに
おいて、所定の電圧でイオンを加速しイオン注入を行
う。その時、イオン注入モニター領域１１にも同様にイ
オン注入を行う。ここで、各領域Ａ〜Ｄにおいて、薄膜
１２を介してシリコンウエハ１０に注入されたイオンの
量は、エネルギーをパラメータにとった実測データと、
四探針法等で測定した抵抗率ρと、薄膜１２の膜厚とに
より容易に求めることができる。そこで、各領域Ａ〜Ｄ
について、理論的に求めたイオン注入量と実際のイオン
注入量とを比較することにより、加速電圧の変動つまり
加速エネルギーの変動を求めることができる。Ion implantation is performed on the ion implantation monitor region 11 thus formed, and the amount of ion implantation in each of the regions A to D is measured. That is, in the semiconductor manufacturing process, ions are accelerated at a predetermined voltage to perform ion implantation. At that time, ion implantation is similarly performed in the ion implantation monitor region 11. Here, in each of the regions A to D, the amount of ions implanted into the silicon wafer 10 via the thin film 12 is measured data using energy as a parameter,
It can be easily obtained from the resistivity ρ measured by the four-point probe method and the film thickness of the thin film 12. Therefore, each area A to D
With respect to, by comparing the theoretically obtained ion implantation amount with the actual ion implantation amount, the fluctuation of the acceleration voltage, that is, the fluctuation of the acceleration energy can be calculated.
【００１２】このように本実施例においては、各領域Ａ
〜Ｄのイオン注入量を測定することにより、４種類の厚
さの異なる薄膜１２において実際のイオン注入量を測定
することになるため、単一の厚さの薄膜においてイオン
注入量を測定する従来例よりも加速エネルギーの変動を
的確に判定することができる。As described above, in this embodiment, each area A
Since the actual ion implantation amounts are measured in the four types of thin films 12 having different thicknesses by measuring the ion implantation amounts of D to D, the conventional method for measuring the ion implantation amount in a thin film having a single thickness is conventionally used. The fluctuation of the acceleration energy can be determined more accurately than in the example.
【００１３】尚、図１では薄膜１２の厚さを４段階に変
化させているが、４段階に限らず適宜複数段階に変化さ
せて実施してもよい。さらに、シリコンウエハ上に複数
のイオン注入モニター領域１１を設けて実施してもよ
い。Although the thickness of the thin film 12 is changed in four steps in FIG. 1, it is not limited to four steps and may be changed in a plurality of steps. Further, a plurality of ion implantation monitor regions 11 may be provided on the silicon wafer for implementation.
【００１４】[0014]
【発明の効果】以上詳述したように本発明によれば、簡
単な方法によってイオン注入におけるイオンの加速エネ
ルギーの変動を的確にモニターできる優れた効果があ
る。As described in detail above, according to the present invention, there is an excellent effect that the fluctuation of the acceleration energy of ions in ion implantation can be accurately monitored by a simple method.
【図面の簡単な説明】[Brief description of drawings]
【図１】本発明を具体化した一実施例におけるモニター
領域の断面図である。FIG. 1 is a cross-sectional view of a monitor area in an embodiment embodying the present invention.
【図２】本発明を具体化した一実施例におけるシリコン
ウエハの平面図である。FIG. 2 is a plan view of a silicon wafer according to an embodiment of the present invention.
１０ シリコンウエハ １１ モニター領域 １２ 薄膜 10 Silicon Wafer 11 Monitor Area 12 Thin Film
Claims (1)
域を形成し、そのモニター領域に薄膜を形成した後、そ
の薄膜を介してイオンを注入し、イオン注入量を測定し
てイオンの加速エネルギーを判定するイオン注入モニタ
ー方法において、 前記薄膜の厚さを階段状に変化させて形成した後、モニ
ター領域にイオンを注入するようにしたことを特徴とす
るイオン注入モニター方法。1. A monitor region is formed at an arbitrary position on a semiconductor substrate, a thin film is formed in the monitor region, ions are implanted through the thin film, and an ion implantation amount is measured to measure ion acceleration energy. In the ion implantation monitoring method for determining, the ion implantation monitoring method is characterized in that the thin film is formed by changing the thickness thereof stepwise, and then ions are implanted into the monitor region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1425192A JPH05206051A (en) | 1992-01-29 | 1992-01-29 | Ion implantation monitor method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1425192A JPH05206051A (en) | 1992-01-29 | 1992-01-29 | Ion implantation monitor method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05206051A true JPH05206051A (en) | 1993-08-13 |
Family
ID=11855874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1425192A Pending JPH05206051A (en) | 1992-01-29 | 1992-01-29 | Ion implantation monitor method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05206051A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990060943A (en) * | 1997-12-31 | 1999-07-26 | 윤종용 | Reference wafer of measuring equipment for semiconductor device manufacturing and its manufacturing method |
| JP2006229145A (en) * | 2005-02-21 | 2006-08-31 | Oki Electric Ind Co Ltd | Method of monitoring implantation depth of impurities |
| WO2019198182A1 (en) * | 2018-04-11 | 2019-10-17 | 三菱電機株式会社 | Semiconductor device, semiconductor wafer, and method for manufacturing semiconductor device |
-
1992
- 1992-01-29 JP JP1425192A patent/JPH05206051A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990060943A (en) * | 1997-12-31 | 1999-07-26 | 윤종용 | Reference wafer of measuring equipment for semiconductor device manufacturing and its manufacturing method |
| JP2006229145A (en) * | 2005-02-21 | 2006-08-31 | Oki Electric Ind Co Ltd | Method of monitoring implantation depth of impurities |
| WO2019198182A1 (en) * | 2018-04-11 | 2019-10-17 | 三菱電機株式会社 | Semiconductor device, semiconductor wafer, and method for manufacturing semiconductor device |
| JPWO2019198182A1 (en) * | 2018-04-11 | 2020-12-03 | 三菱電機株式会社 | Manufacturing method of semiconductor devices, semiconductor wafers and semiconductor devices |
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