JPH05190438A - Semiconductor manufacturing apparatus - Google Patents

Abstract

PURPOSE:To enhance the uniformity of the thickness of the coating film of a photoresist onto a wafer and to reduce mistlike foreign bodies of the resist. CONSTITUTION:The title apparatus is constituted in the following manner: a resist nozzle 1 which drops a photoresist onto a wafer 2 can be moved, by means of a motor 6, from the center of the water 2 to the periphery of the wafer 2; and the distance 4 between the wafer 2 and the resist nozzle 1 can be changed by means of a cam 7 for nozzle raising and lowering use.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus for spin coating a photoresist on a wafer.

[0002]

2. Description of the Related Art FIG. 3 is a sectional view of a conventional semiconductor manufacturing apparatus of this type. In FIG. 3, reference numeral 1 is a resist nozzle for ejecting a photoresist to the center of a wafer 2. Reference numeral 3 is a wafer chuck for vacuum suction and rotation of the wafer 2, and reference numeral 4 is a distance between the wafer 2 and the resist nozzle 1.

Next, the operation will be described. The wafer 2 transferred from the previous step is centered, placed on the wafer chuck 3, and vacuum-adsorbed. Next, the resist nozzle 1 is moved to the center position of the wafer 2 and fixed. At that time, the distance 4 between the wafer 2 and the resist nozzle 1 is set to Amm. Next, the wafer 2 is rotated by the wafer chuck 3, and at the same time, the photoresist is dropped onto the center of the wafer 2 from the resist nozzle 1 (about 3 to 5 seconds). After that, the wafer 2 is rotated at a high speed and the photoresist is evenly spread and applied. Here, the distance 4 between the resist nozzle 1 and the wafer 2 at the time of discharging the photoresist is a constant value of Amm.

[0004]

Since the conventional semiconductor manufacturing apparatus is constructed as described above, a large amount of photoresist must be discharged when the wafer 2 has a large diameter, and the wafer 2 is The uniformity of the resist film thickness becomes worse toward the periphery, and furthermore, since the photoresist is dropped from the fixed position of the resist nozzle 1 only to the center of the wafer 2, the photoresist mist-like due to the bounce at the time of dropping. There was a problem such as a large amount of.

The present invention has been made in order to solve the above-mentioned problems, and it is possible to secure a high level of film thickness uniformity even for a large-diameter wafer, and to reduce mist-like foreign matter in the photoresist. The purpose is to obtain semiconductor manufacturing equipment.

[0006]

In a semiconductor manufacturing apparatus according to the present invention, a resist nozzle can be moved so that a photoresist can be ejected while scanning a wafer, and a distance between the wafer and the resist nozzle is also changed at the same time. It was made possible.

[0007]

According to the present invention, when the photoresist is dropped onto the wafer, the resist nozzle moves from the center of the wafer toward the edge of the wafer, and at the same time, the distance between the wafer and the resist nozzle can be changed. Since it spreads over the entire surface, the coating film thickness becomes uniform, and bounce when the photoresist is dropped on the wafer is reduced, so that the mist-like foreign matter of the photoresist can be reduced.

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a block diagram showing an embodiment of a semiconductor manufacturing apparatus of the present invention. In FIG. 1, 1-4 are the same as those in FIG. 3, 5 is a pillar for supporting the resist nozzle 1, 6 is for scanning the resist nozzle 1 on the wafer 2, that is, the resist nozzle 1 is a wafer. 2 is a horizontal moving means that is movable from the center of 2 to the peripheral part, and is a motor for giving rotation to the column 5, and 7 is a vertical moving means for changing the distance 4 between the resist nozzle 1 and the wafer 2. Is the cam for nozzle up and down. 8 indicates a position when the resist nozzle 1 is moved left and right, and 9
Reference numerals a and 9b show horizontal and vertical movable directions of the position of the resist nozzle 1. Also, FIG.
(A)-(c) shows an example of a sequence.

Next, the operation will be described. As in the sequence example of FIG. 2, the wafer 2 is first rotated at 100 rpm. After 4 seconds, a photoresist is dropped on the wafer 2 (FIG. 2A). Dropping speed is 1-2cc / se
c. The motor 6 is turned on 1 second after the dropping (in this embodiment, a pulse motor is used, and the speed is the wafer 2).
The number of pulses was adjusted so as to be 50 mm / sec (FIG. 2 (b)). At the same time, the distance 4 between the resist nozzle 1 and the wafer 2 is 4 m as shown in the sequence diagram of FIG.
The nozzle up / down cam 7 was adjusted so as to move upward at m / sec. Stop the dropping of the photoresist after 2 seconds. One second after that, the operation principle is such that the wafer 2 is raised to a rotation speed (3700 rpm in the example) at which a predetermined coating film thickness is obtained, the wafer 2 is rotated for a predetermined time, and this sequence is ended. As a result, the variation in the coating film thickness can be suppressed within ± 50 Å, and further, the mist-like foreign matter in the photoresist can be reduced by about 70% as compared with the conventional example.

In the above embodiment, the resist nozzle 1
Although the rotary system was used to move, the linear motion system may be used. Further, although the nozzle up / down cam 7 is used for the up / down movement of the registration nozzle 1, an air cylinder or a motor may be used. Further, in the above-described embodiment, the spin coating of the photoresist has been described, but SOG or another material amount may be used, and the same effect as that of the above-described embodiment is obtained. Further, in the above embodiment, the number of resist nozzles 1 is one, but it may be plural.

[0011]

As described above, according to the present invention, the resist nozzle can be moved from the center of the wafer to the peripheral portion when the photoresist is dropped, and the distance between the resist nozzle and the wafer can be changed. Since it can be varied even in the inside, there is an effect that the uniformity of the resist coating film thickness can be improved even for a large-diameter wafer, and that mist-like foreign matter generated when the photoresist is dropped can be reduced.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram of a semiconductor manufacturing apparatus according to an embodiment of the present invention.

FIG. 2 is an example of a sequence according to an embodiment of the present invention.

FIG. 3 is a schematic configuration diagram showing a conventional semiconductor manufacturing apparatus.

[Explanation of symbols]

 1 Registration Nozzle 2 Wafer 3 Wafer Chuck 4 Distance 5 Support 6 Motor 7 Nozzle Up / Down Cam 8 Position of Registration Nozzle After Movement 9 Registration Nozzle Movable Direction

Claims (1)

[Claims] 1. In a semiconductor manufacturing apparatus for obtaining a predetermined coating film thickness by dropping a photoresist from a resist nozzle onto a wafer and rotating the photoresist nozzle, the resist nozzle is surrounded from the center of the wafer when the photoresist is dropped. 1. A semiconductor manufacturing apparatus comprising: a horizontal moving unit that is movable to a vertical section; and a vertical moving unit that can change a distance between the wafer and the resist nozzle even during movement of the resist nozzle.