JPH05183020A - Manufacture of tab lead type semiconductor device - Google Patents

Abstract

PURPOSE:To make it possible to thermally bond the bump electrodes and inner leads under pressure reliably without any displacement even when the width and interlead pitches of the inner leads are small by setting the bonding order in such a manner that the temperature distribution of the through hole aperture edges of an insulating film is made substantially equal at the time of thermal bonding under pressure. CONSTITUTION:In a through hole 2 formed in an insulting film 1, a plurality of inner leads 6 formed by extending a conductive pattern, and a plurality of bump electrodes 5 made of semiconductor pellets 3 arranged in the through hole 2 are superposed. The superposed parts are thermally bonded under pressure by a bonding tool one after another. At this juncture, the bonding order is defined so that the temperature distribution of the through hole aperture edges in the insulating film 1 is made substantially equal at the time of the pressurized thermal bonding. For example, the inner leads 6a and 6b in the vicinity of the corner 11 of the first side 4a of the semiconductor pellet 3 are thermally bonded under pressure, and then, the inner leads 6c and 6d in the vicinity of the corner 13 of the third side 4c are thermally bonded under pressure. After that, the inner leads 6e to 6p are thermally bonded under pressure in that order.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a TAB lead type semiconductor device capable of preventing the bump electrode and the inner lead from being displaced during thermocompression bonding of the bump electrode and the inner lead.

[0002]

2. Description of the Related Art As shown in FIGS. 3 and 4, a TAB lead type semiconductor device has a semiconductor pellet (3) in a through hole (2) formed in a frame-shaped film (1) made of an insulating film. Arrange and configure. The above semiconductor pellet (3)
Is the side edges (4a) (4b) of the surface due to raised plating, etc.
(4c) A plurality of bump electrodes (5) formed on (4d)
Is thermocompression-bonded to a plurality of inner leads (6) formed by extending conductive patterns (not shown), thereby being supported in the through holes (2).

Conventionally, the thermocompression bonding of the bump electrode (5) and the inner lead (6) of the TAB lead type semiconductor device having the above-mentioned structure has been carried out as shown in FIG. First, the frame-shaped film (1) provided with the through holes (2) is conveyed to a predetermined position, and then the semiconductor pellets (3) are arranged at the specified positions in the through holes (2). Then, the semiconductor pellet (3) is supported from below by the supporting member (7), the bonding tool (8) having a planar bottom surface is lowered, and the inner lead (6) is pressed against the bump electrode (5) to generate heat. Crimp.
When the thermocompression bonding of the inner lead (6) and the bump electrode (5) at one place is completed, the bonding tool (8) is moved in the clockwise direction and sequentially transferred to the upper side of the adjacent inner lead (6), Similarly, the individual inner leads (6) and the corresponding bump electrodes (5) are thermocompression bonded.

[0004]

Conventionally, since the bonding tool (8) is moved in the clockwise direction and the inner lead (6) and the bump electrode (5) which are adjacent to each other are thermocompression-bonded one by one, the inner lead. A large time difference occurs between the first thermocompression bonding and the last thermocompression bonding in (6). Therefore, when the heat generated by the thermocompression bonding is conducted to the frame-shaped film (1) through the inner leads (6), the opening edge (9) of the through hole (2) locally becomes high in temperature and the temperature distribution becomes Non-uniformity causes thermal distortion, warpage, etc. Due to the thermal distortion, warpage, etc. of the opening edge (9), the inner lead (6) is displaced from the specified position and is no longer positioned directly above the bump electrode (5). There were cases. If the inner leads (6) are thermo-compression-bonded to the bump electrodes in such a position-shifted state, the pressure-bonding may be incomplete and the connection may be defective, resulting in extremely low product yield. In particular, under the tendency of narrowing the lead pitch and the lead width due to the recent miniaturization or high density of semiconductor devices, even the slight displacement of the inner leads causes the above-mentioned problems, and the product reliability and the productivity are deteriorated. To do.

The present invention has been proposed in view of the above problems, and it is possible to reliably perform thermocompression bonding between the bump electrode and the inner lead without displacement even when the width of the inner lead and the pitch between the leads are small. An object of the present invention is to provide a method of manufacturing a TAB lead type semiconductor device that can be manufactured.

[0006]

In order to achieve the above object, the present invention provides a plurality of inner leads formed by extending a conductive pattern in a through hole formed in an insulating film, and a plurality of inner leads in the through hole. When a plurality of bump electrodes of the placed semiconductor pellets are superposed and arranged, and the superposed portions are sequentially thermocompression bonded with a bonding tool, bonding is performed so that the temperature distribution of the opening edge of the through hole of the insulating film during thermocompression bonding becomes substantially uniform. The order is set.

[0007]

When the bump electrode of the semiconductor pellet and the inner lead extension end are thermocompression bonded, heat is conducted to the through hole opening edge of the insulating film through the inner lead. The parts are thermocompressed in any order so that the temperature distribution of the openings of the insulating film during thermocompression bonding becomes uniform, so the openings of the insulating film are warped or warped by heat. It is possible to prevent the occurrence.

[0008]

Embodiments of the present invention will be described below with reference to FIGS. 1 and 2. The same components as those shown in FIGS. 3 and 4 are designated by the same reference numerals and the description thereof will be omitted.

The method of the present invention is characterized in that the semiconductor pellet (3) arranged in the through hole (2) of the frame-shaped film (1).
When the plurality of bump electrodes (5) and the extended ends of the plurality of inner leads (6) formed on the frame-shaped film (1) are sequentially thermocompression bonded by the bonding tool (8) one by one, Through holes (2) of the frame-shaped film (1) during pressure bonding
The bump electrodes (5) and the extended ends of the inner leads (6) are thermocompression-bonded in any order so that the temperature distribution of the opening edge (9) becomes uniform. ..

FIG. 1 shows an example of the sequence of thermocompression bonding of the bump electrode (5) and the inner lead (6). First, adjacent inner leads (6a) (6b) near the lower corner portion (11) of FIG. 1 on the first side (4a) of the semiconductor pellet (3) are thermocompression bonded to the bump electrodes (5). , A corner portion (1) above the third side (4c) located at a point symmetrical position with the inner leads (6a) (6b).
3) The adjacent inner leads (6c) (6d) in the vicinity are thermocompression-bonded in sequence. Then, the adjacent inner leads (6) near the corner portion (12) on the left side of the second side (4b).
e) (6f) is thermocompression-bonded to the bump electrodes (5), respectively, and then the corner portion (14) on the right side of the fourth side (4d) located at a point symmetrical position with the inner leads (6e) (6f).
The inner leads (6g) (6h) located in the vicinity are thermocompression bonded. In the same manner, each side of the semiconductor pellet (3) (4
a) (4c) (4b) (4d) the other corner portion (1
4) Inner leads (6i) of (12) (11) (13)
(6p) are thermocompression bonded, and then the remaining uncompressed inner leads (6) on each side are sequentially thermocompression bonded. When the inner leads are thermocompression-bonded in such a manner, first, the inner leads (6a) to (4a) to (14d) in the vicinity of the both side portions (4a) to (4d) of the semiconductor pellet (3) are first. (6
Since p) is thermocompression bonded with an extremely small time difference, the heat generated by this thermocompression is conducted to the opening edge (9) of the through hole (2) of the frame-shaped film (1) via the inner leads. However, each side of the opening edge (9) is heated substantially evenly, and the temperature does not rise locally, and the temperature distribution becomes uniform. Therefore, the opening edge (9) of the through hole (2) of the frame-shaped film (1).
Is not distorted by heat and does not warp, and all the inner leads (6) (6a) to (6p) are securely positioned right above the bump electrode (5) without being displaced from the specified position. To do.

In addition, the bump electrode (5) is formed in the following manner.
The inner lead (6) and the inner lead (6) may be thermocompression bonded. That is, as shown in FIG. 2, the first to fourth semiconductor pellets (3) are
Each side (4a) to (4d) of the three blocks (a)
(B) and (c) are respectively divided into the first side (4a) of FIG.
The adjacent inner leads (6) located in the first block (a) in the vicinity of the lower corner portion (11) are sequentially thermocompressed, and then in the second corner in the vicinity of the upper corner portion (14).
The adjacent inner leads (6) of the block (b) are thermocompression bonded, and then the adjacent inner leads (6) of the third block (c) in the intermediate portion are thermocompression bonded. When the thermocompression bonding of all the inner leads (6) of the first side (4a) of the semiconductor pellet (3) is completed in this way, the third side (4)
c), the inner leads (6) of the blocks (a) to (c) of the second side (4b) and the fourth side (4d) are thermocompression bonded in the same manner as above. In this way, each side (4a) to (4
Inner lead (6) for each of blocks (a) to (c) in d)
When thermocompression bonding is performed, the inner leads (6) are
When the heat is conducted to the opening edge (9) of the frame-shaped film (1) through, the respective sides of the opening edge (9) are heated substantially uniformly, and the temperature distribution becomes uniform.

Further, the order of thermocompression bonding of the bump electrode (5) and the inner lead (6) is not limited to the above example, and as described above, the frame-shaped film (1) during thermocompression bonding is used. The bump electrodes (5) and the inner leads (6) at a plurality of locations so that the temperature distribution of the opening edge (9) of the through hole becomes uniform.
The extension ends of the can be thermocompression bonded in any order. For example, by moving the bonding tool (8) in the clockwise direction, one inner lead (6) is placed, or two inner leads (6) are placed. After crimping, the remaining inner leads (6) may be thermocompressed. When the inner leads (6) are thermocompression-bonded by placing one or two in this way, the time for the bonding tool (8) to make one turn becomes very short, so that the opening edge of the frame-shaped film (1) ( 9) is the inner lead (6)
Is heated substantially evenly through the, so that the temperature does not rise locally and the temperature distribution becomes uniform.

[0013]

According to the method of the present invention, the bump electrodes and the inner lead extending end portions at a plurality of positions are arbitrarily arranged so that the temperature distribution at the opening edge of the through hole of the insulating film during thermocompression bonding becomes uniform. Since thermocompression bonding is performed in order, it is possible to reliably prevent the opening edge of the through hole of the insulating film from being distorted or warped by heat. Therefore, during thermocompression bonding of the inner leads, even if the width and the pitch between the leads are small, the inner leads do not shift from the specified position and can always be positioned directly above the bump electrodes. The thermocompression bonding is completely performed, the product yield is improved, and the product reliability and productivity are improved.

[Brief description of drawings]

FIG. 1 is an explanatory view showing a thermocompression bonding procedure of an inner lead according to the method of the present invention.

FIG. 2 is an explanatory view showing another thermocompression bonding method of the inner lead.

FIG. 3A is a plan view of a TAB lead-type semiconductor device,
(B) is a side sectional view.

FIG. 4 is a side sectional view showing a general inner bonding apparatus.

[Explanation of symbols]

1 Insulating Film 2 Through Hole 3 Semiconductor Pellet 5 Bump Electrode 6, 6a-6p Inner Lead 8 Bonding Tool

Claims (1)

[Claims] 1. A plurality of inner leads formed by extending a conductive pattern in a through hole formed in an insulating film, and a plurality of bump electrodes of a semiconductor pellet arranged in the through hole are superposed and arranged. A TAB lead-type semiconductor device, characterized in that the bonding order is set so that the temperature distribution of the opening edge of the through hole of the insulating film during thermocompression bonding becomes substantially uniform when thermocompression-bonding the overlapped portions one after another with a bonding tool. Production method.