[go: up one dir, main page]

JPH0517652B2 - - Google Patents

Info

Publication number
JPH0517652B2
JPH0517652B2 JP58234243A JP23424383A JPH0517652B2 JP H0517652 B2 JPH0517652 B2 JP H0517652B2 JP 58234243 A JP58234243 A JP 58234243A JP 23424383 A JP23424383 A JP 23424383A JP H0517652 B2 JPH0517652 B2 JP H0517652B2
Authority
JP
Japan
Prior art keywords
lens
electron
electron gun
anode
field emission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58234243A
Other languages
Japanese (ja)
Other versions
JPS60127645A (en
Inventor
Hideo Todokoro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58234243A priority Critical patent/JPS60127645A/en
Publication of JPS60127645A publication Critical patent/JPS60127645A/en
Publication of JPH0517652B2 publication Critical patent/JPH0517652B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06Electron sources; Electron guns
    • H01J37/073Electron guns using field emission, photo emission, or secondary emission electron sources

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、電子顕微鏡の電子銃に係り、特に電
界放射形の電子源に好適な電子銃に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to an electron gun for an electron microscope, and particularly to an electron gun suitable for a field emission type electron source.

〔発明の背景〕[Background of the invention]

従来の電界放射形電子銃の構造を第1図に示し
た。電界放射用電子源すなわち陰極1が陰極電位
導入端子2に支持されている。陰極電位導入端子
2はフランジ11に固定され、電子銃鏡筒10に
真空パツキングを介して固定されている。電界放
射陰極1に対向した位置に第1陽極3が配置され
ている。第1陽極3は電子銃鏡筒10の底面18
上に置かれた円筒碍子4によつて支持されてい
る。第1陽極3には、陽極電位導入端子12、接
触リング19を通して引出電圧14が電界放射陰
極1との間に印加される。電界放射陰極1と第1
陽極3との間に3〜5kVの電圧を印加すると電界
放射陰極1から電子23が放出される。
The structure of a conventional field emission type electron gun is shown in FIG. An electron source for field emission, that is, a cathode 1 is supported by a cathode potential introduction terminal 2 . The cathode potential introduction terminal 2 is fixed to the flange 11 and fixed to the electron gun barrel 10 via vacuum packing. A first anode 3 is arranged at a position facing the field emission cathode 1. The first anode 3 is the bottom surface 18 of the electron gun barrel 10.
It is supported by a cylindrical insulator 4 placed above. An extraction voltage 14 is applied to the first anode 3 and the field emission cathode 1 through an anode potential introduction terminal 12 and a contact ring 19 . Field emission cathode 1 and the first
When a voltage of 3 to 5 kV is applied between the anode 3 and the field emission cathode 1, electrons 23 are emitted.

電界放射では、電界放射陰極1を高温にして陰
極をクリーニングする必要がある。加熱電源15
は、このクリーニングのために設けられたもの
で、陰極電位導入端子2の2本の端子を通して通
電により行う。放射された電子23のうち第1陽
極3の開孔22を通過したものは電界放射陰極1
と電子銃鏡筒(接地電位)10との間に加えられ
た加速電圧13になるように加速あるいは減速さ
れる。電子銃鏡筒10の下方には上部磁極6、下
部磁極7、磁路5、コイル8および非磁性のスペ
ーサ16からなる磁界形電子レンズ25が配置さ
れている。
In field emission, it is necessary to heat the field emission cathode 1 to a high temperature and clean the cathode. Heating power source 15
is provided for this cleaning, and is carried out by passing electricity through the two terminals of the cathode potential introduction terminal 2. Of the emitted electrons 23, those that have passed through the aperture 22 of the first anode 3 are emitted from the field emission cathode 1.
The electron beam is accelerated or decelerated to the acceleration voltage 13 applied between the electron gun barrel and the electron gun barrel (ground potential) 10. A magnetic field type electron lens 25 consisting of an upper magnetic pole 6, a lower magnetic pole 7, a magnetic path 5, a coil 8, and a nonmagnetic spacer 16 is arranged below the electron gun barrel 10.

電子銃鏡筒10の底面(第2電極)18の開口
24を通つた電子ビームは磁界形レンズ25で集
束され、さらに下方の磁界形電子レンズ等(図示
省略)に導かれる。この図からわかるように、こ
の構成では磁界形電子レンズ25と電界放射陰極
1との間の距離が長くなる。このため、磁界形電
子レンズ25は長焦点レンズとして動作し、収差
が大きい欠点があつた。
The electron beam passing through the aperture 24 of the bottom surface (second electrode) 18 of the electron gun barrel 10 is focused by a magnetic field type lens 25, and further guided to a magnetic field type electron lens or the like (not shown) located below. As can be seen from this figure, in this configuration, the distance between the magnetic field type electron lens 25 and the field emission cathode 1 becomes long. For this reason, the magnetic field type electron lens 25 operates as a long focal length lens, and has the drawback of large aberrations.

こういう構造にしているには、次のような理由
があつた。それは、磁界形電子レンズ25のコイ
ル8が、電子銃鏡筒10内を超高真空(10-8Pa)
にするために行うヒータ20によるベーキング
(200°〜300℃)に耐えられないためであつた。そ
こで、磁界形電子レンズ25を電子銃鏡筒10か
ら下方に離して配置し、上記のベーキングに際し
て高温にならないようにしていた。真空排気は、
電子銃鏡筒10の側壁に設けられた真空排気孔9
から行う。
The reasons for this structure were as follows. The coil 8 of the magnetic field type electron lens 25 moves the inside of the electron gun barrel 10 under an ultra-high vacuum (10 -8 Pa).
This was because it could not withstand baking (200° to 300° C.) using the heater 20 to achieve the desired temperature. Therefore, the magnetic field type electron lens 25 is placed downwardly and away from the electron gun lens barrel 10 to prevent the temperature from reaching high temperatures during the above-mentioned baking. Vacuum exhaust is
Vacuum exhaust hole 9 provided in the side wall of the electron gun barrel 10
Start from

〔発明の目的〕[Purpose of the invention]

本発明の目的は、磁界形電子レンズを短焦点動
作させることができ、かつ電子銃鏡筒のベーキン
グをも可能とする電界放射形電子銃を提供するこ
とにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a field emission type electron gun in which a magnetic field type electron lens can be operated at a short focus, and an electron gun barrel can also be baked.

〔発明の概要〕[Summary of the invention]

磁界形電子レンズのうち、ベーキング時に問題
となるのはコイル部である。そこで、本発明で
は、このコイル部を電子源後方の鏡筒端部に配置
し、ベーキング時には取外し可能に構成したもの
である。
Among magnetic field type electron lenses, it is the coil portion that poses a problem during baking. Therefore, in the present invention, this coil section is arranged at the end of the lens barrel behind the electron source, and is configured to be detachable during baking.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の一実施例を第2図により説明す
る。コイル磁路5とコイル8からなるコイル部2
6が電子銃鏡筒10の最上端部真空外に取付けら
れている。電子銃鏡筒10の最上端部は、スペー
サ29で真空的に封じられているので、コイル部
26は取外しても真空的に問題はない。通常使用
時には、コイル部26は電子銃鏡筒部10と機械
的に接続されている。そこで、ベーキング時に
は、このコイル部26を取外し、ベーキングでコ
イル8が損傷を受けることを防ぐことができる。
ベーキングは、電子銃鏡筒10内を真空排気しな
がら、電子銃鏡筒10の外周に捲かれたヒータ2
0(例えば、シーズヒーター)で電子銃室全体を
例えば250℃〜300℃にする。これを例えば約5時
間行なう。ベーキングが終了して、鏡筒10内が
超高真空状態になつた後に、コイル部26を取付
ける。
An embodiment of the present invention will be described below with reference to FIG. Coil section 2 consisting of coil magnetic path 5 and coil 8
6 is attached to the top end of the electron gun lens barrel 10 outside the vacuum. Since the uppermost end of the electron gun barrel 10 is vacuum sealed with a spacer 29, there is no vacuum problem even if the coil section 26 is removed. During normal use, the coil section 26 is mechanically connected to the electron gun barrel section 10. Therefore, during baking, this coil portion 26 can be removed to prevent damage to the coil 8 due to baking.
Baking is performed by using a heater 2 wrapped around the outer periphery of the electron gun barrel 10 while evacuating the inside of the electron gun barrel 10.
0 (e.g., a sheathed heater), the entire electron gun chamber is heated to, for example, 250°C to 300°C. This is done for about 5 hours, for example. After baking is completed and the inside of the lens barrel 10 is in an ultra-high vacuum state, the coil portion 26 is attached.

コイル8に通電すると磁束が生じるが、この磁
束は、コイル磁路5、内磁路27、第1陽極1
7、電子銃鏡筒底面18、電子銃鏡筒10を経由
して流れる。内磁路10の中間には絶縁リング2
1が挿入されている。これは第1陽極17を接地
電位から浮かせるためのものである。この部分で
磁気抵抗を生じるが、2〜3ミリメートル程度の
厚さの絶縁リング21なので磁束の量に変化を与
えるようなものではない。
Magnetic flux is generated when the coil 8 is energized, and this magnetic flux is transmitted through the coil magnetic path 5, the inner magnetic path 27, and the first anode 1.
7. Flows through the bottom surface 18 of the electron gun barrel and the electron gun barrel 10. An insulating ring 2 is placed in the middle of the inner magnetic path 10.
1 is inserted. This is to float the first anode 17 from the ground potential. Although magnetic resistance occurs in this portion, since the insulating ring 21 has a thickness of about 2 to 3 mm, it does not change the amount of magnetic flux.

この実施例では、第1陽極17と電子銃鏡筒底
面18は、それぞれ磁界形電子レンズの上磁極と
下磁極になつている。この構造では、磁界形電子
レンズのレンズ作用はほぼ、上磁極(第1陽極1
7)と下磁極(電子銃鏡筒底面18)の間で生じ
るので磁界形電子レンズを短焦点で動作させるこ
とができる。内磁路27の上端と電子鏡筒10の
上端は非磁性のスペーサ29を介して接続されて
いる。電界放射陰極1は、フランジ11に固定さ
れた陰極電位導入端子2に支持されている。電子
銃の真空排気は真空排気孔9から行うが、内磁路
27の一部分にさらに内磁路排気孔28を設け、
電界放射陰極1の周囲の真空排気を行う。
In this embodiment, the first anode 17 and the bottom surface 18 of the electron gun barrel serve as the upper and lower magnetic poles of the magnetic field type electron lens, respectively. In this structure, the lens action of the magnetic field type electron lens is mostly based on the upper magnetic pole (first anode 1).
7) and the lower magnetic pole (electron gun lens barrel bottom surface 18), the magnetic field type electron lens can be operated with a short focus. The upper end of the inner magnetic path 27 and the upper end of the electronic lens barrel 10 are connected via a nonmagnetic spacer 29. The field emission cathode 1 is supported by a cathode potential introducing terminal 2 fixed to a flange 11. The electron gun is evacuated through the vacuum exhaust hole 9, and an inner magnetic path exhaust hole 28 is further provided in a part of the inner magnetic path 27.
The area around the field emission cathode 1 is evacuated.

第3図は本発明の他の実施例であり、磁路5と
コイル8とからなるコイル部26が鏡筒10の上
方側端部分に取付けてある。この実施例の特徴
は、鏡筒を短くできることで、走査形電子顕微鏡
のように振動を嫌う装置には特に有効である。コ
イル部26は鏡筒10から取外せるように構成さ
れていることは言うまでもない。
FIG. 3 shows another embodiment of the present invention, in which a coil portion 26 consisting of a magnetic path 5 and a coil 8 is attached to the upper end portion of the lens barrel 10. A feature of this embodiment is that the lens barrel can be shortened, which is particularly effective for devices that do not like vibrations, such as scanning electron microscopes. Needless to say, the coil portion 26 is configured to be detachable from the lens barrel 10.

〔発明の効果〕〔Effect of the invention〕

以上詳述したように、本発明によれば、電界放
射形電子銃と短焦点の磁界形電子レンズを組合せ
ることができるので、電界放射形電子銃の輝度を
低下させる原因となつていた磁界形電子レンズの
収差を減らすことができる。例えば、従来、電界
放射形電子銃の次段に用いられていた磁界形電子
レンズの焦点距離は約5cmであつたが、本発明に
よればこれを1cmにすることができる。この結
果、球面収差は約100分の1、色収差は約5分の
1となる。さらにまた、焦点距離5cmの場合、磁
界形電子レンズを通過した後の電子ビームの輝度
は電子源そのものがもつ輝度の約10分の1に低下
するが、一方、1cmの焦点距離では、輝度の低下
は約2分の1である。すなわち、本発明を実施す
れば、5倍も明るい電子ビームを取出すことがで
きる。
As detailed above, according to the present invention, it is possible to combine a field emission type electron gun and a short focus magnetic field type electron lens. It is possible to reduce the aberration of the shaped electron lens. For example, the focal length of a magnetic field type electron lens conventionally used in the next stage of a field emission type electron gun was about 5 cm, but according to the present invention, this can be reduced to 1 cm. As a result, spherical aberration is reduced to about 1/100, and chromatic aberration is reduced to about 1/5. Furthermore, when the focal length is 5 cm, the brightness of the electron beam after passing through the magnetic field type electron lens decreases to about one-tenth of the brightness of the electron source itself, while at a focal length of 1 cm, the brightness decreases. The reduction is about 2 times. That is, by implementing the present invention, it is possible to extract an electron beam that is five times brighter.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、従来の電界放射形電子銃と磁界形電
子レンズの組合せを示す図、第2図は、本発明の
一実施例を示す図、第3図は、本発明の他の実施
例を示す図である。 1……陰極、5……コイル磁路、8……コイ
ル、10……鏡筒、11……フランジ、13……
加速電圧、14……引出電圧、17……第1陽
極、18……電子銃鏡筒底面、20……ヒータ、
26……コイル部、27……内磁路。
FIG. 1 is a diagram showing a combination of a conventional field emission type electron gun and a magnetic field type electron lens, FIG. 2 is a diagram showing one embodiment of the present invention, and FIG. 3 is a diagram showing another embodiment of the present invention. FIG. 1... Cathode, 5... Coil magnetic path, 8... Coil, 10... Lens barrel, 11... Flange, 13...
Accelerating voltage, 14... Extraction voltage, 17... First anode, 18... Electron gun barrel bottom surface, 20... Heater,
26...Coil part, 27...Inner magnetic path.

Claims (1)

【特許請求の範囲】[Claims] 1 電界放射用電子源と、該電界放射用電子源か
ら電子を引出すための第1陽極と、該第1陽極の
開孔を通過した電子を加速あるいは減速するため
の第2陽極と、前記電子源から放射される電子線
を集束するための磁界形電子レンズとを具備する
電界放射形電子銃において、前記第1陽極と前記
第2陽極を、前記磁界形電子レンズの磁極と共用
させ、かつ前記磁界形電子レンズの励磁コイルを
前記電子源の後方の鏡筒端部分に配置し、取外し
可能に構成したことを特徴とする電界放射形電子
銃。
1. An electron source for field emission, a first anode for extracting electrons from the electron source for field emission, a second anode for accelerating or decelerating the electrons that have passed through the aperture of the first anode, and A field emission type electron gun comprising a magnetic field type electron lens for focusing an electron beam emitted from a source, wherein the first anode and the second anode are shared with the magnetic pole of the magnetic field type electron lens, and A field emission type electron gun, characterized in that the excitation coil of the magnetic field type electron lens is disposed at an end portion of the lens barrel behind the electron source and configured to be removable.
JP58234243A 1983-12-14 1983-12-14 Field emission type electron gun Granted JPS60127645A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58234243A JPS60127645A (en) 1983-12-14 1983-12-14 Field emission type electron gun

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58234243A JPS60127645A (en) 1983-12-14 1983-12-14 Field emission type electron gun

Publications (2)

Publication Number Publication Date
JPS60127645A JPS60127645A (en) 1985-07-08
JPH0517652B2 true JPH0517652B2 (en) 1993-03-09

Family

ID=16967921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58234243A Granted JPS60127645A (en) 1983-12-14 1983-12-14 Field emission type electron gun

Country Status (1)

Country Link
JP (1) JPS60127645A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2775071B2 (en) * 1989-02-22 1998-07-09 日本電信電話株式会社 Charged particle beam generator
JP3900792B2 (en) * 2000-04-26 2007-04-04 株式会社日立製作所 Electron gun
US11227740B2 (en) 2017-09-07 2022-01-18 Hitachi High-Tech Corporation Electron gun and electron beam application device

Also Published As

Publication number Publication date
JPS60127645A (en) 1985-07-08

Similar Documents

Publication Publication Date Title
EP0523699B1 (en) Charged particle beam apparatus, ionpump and method of pumping
TWI435362B (en) Charged particle apparatus
JPH071681B2 (en) Charged particle beam device
SU568406A3 (en) Electron beam tube
EP0473227A2 (en) Magnet for use in a drift tube of an X-ray tube
JPH0517652B2 (en)
JP4526113B2 (en) Microfocus X-ray tube and X-ray apparatus using the same
US3213311A (en) Electron discharge device
JP2002134051A (en) Electromagnetic field superimposed lens and electron beam device using the same
JP2005528773A (en) X-ray tube
US3370168A (en) Anode aperture plate for a television camera tube in an electron microscope comprising a stainless steel foil
US4977348A (en) Electron discharge tube with bipotential electrode structure
JPS6318297B2 (en)
JPS61128439A (en) Cathode ray tube with ion trap
GB2018507A (en) A single use X-ray source
JP4091217B2 (en) X-ray tube
EP0106092A1 (en) Cathode ray tube
JP2000182558A (en) Scanning electron microscope
JPS6138574B2 (en)
JPH07211494A (en) Small electron gun
JPH07169422A (en) X-ray tube
JPS6322610Y2 (en)
JP2808938B2 (en) High power microwave tube
JPH0121470Y2 (en)
JPH10335099A (en) Ion beam incident structure of tandem accelerator tube