JPH05160307A - Semiconductor chip module - Google Patents

Abstract

(57) [Summary] [Object] An object of the present invention is to obtain a semiconductor chip module in which an external impact is not directly applied to a chip joined to a heat sink and a heat dissipation efficiency from the semiconductor chip is high. [Structure] An upper substrate (2) is stacked and fixed on a lower substrate (1), and a cap (3) is covered.
The upper substrate (2) is included. A semiconductor chip (5) is mounted on the upper substrate (2), and a hole (4) is formed on the cap (3) at a position corresponding to the mounting position of the semiconductor chip (5).
a) is formed. A bottomless mortar-shaped resin retaining ring (4) is provided from the inner edge of the hole (4a) to the back surface of the semiconductor chip (5), and further heat radiation for connecting the back surface of the semiconductor chip (5) and the heat sink (9). Metal (7)
Are installed on the semiconductor chip (5). A heat conductive resin (6) is filled around the heat dissipation metal (7) and the heat dissipation metal (7) is fixed on the semiconductor chip (5), so that the heat dissipation efficiency of the semiconductor chip (5) is improved. While increasing
Moreover, it is possible to avoid damage to the semiconductor chip (5) due to external impact.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor chip module (multichip module, single chip module) applicable to fields requiring high speed signal processing, such as computers and communications.

[0002]

2. Description of the Related Art As electronic devices have become faster and more multifunctional, integrated circuits used in electronic circuits of these devices have become faster and faster.
Higher density is progressing. As a result, the amount of heat generated per unit area of the semiconductor chip used as an integrated circuit also increases, and it has become necessary to consider the heat dissipation of the electronic circuit in order to fully exhibit the performance of the device.

The first method of heat dissipation is through the substrate on which the components are mounted. However, as the performance of the integrated circuit has improved, the amount of heat generated from the semiconductor chip has increased, and sufficient heat dissipation cannot be achieved only through the substrate. Therefore, it has become necessary to consider other heat dissipation paths.

Therefore, as a second method of heat dissipation, a method is used in which a heat sink is provided on the opposite side of the substrate surface of the semiconductor chip to make direct contact with it (IEEE TRANSACTION).
CO-MPONENTS, HYBRIDS, AND MANUFACTURING TECHNOLOGY
Vol.13, No.4 1990 p.1022 to p.1031).

[0005]

However, when the heat sink is directly bonded to the back surface of the semiconductor chip, if an external impact is applied to the heat sink, the semiconductor chip bonded to the heat sink is highly likely to be damaged. There was a problem.

It is an object of the present invention to obtain a semiconductor chip module in which an external impact is not directly applied to the chip bonded to the heat sink and the heat dissipation efficiency from the semiconductor chip is high.

[0007]

A semiconductor chip module according to the present invention includes a substrate on which a wiring portion is formed, a semiconductor chip mounted with the circuit surface facing the wiring portion, and a side opposite to the circuit surface of the semiconductor chip. A heat-dissipating metal whose one end is in contact with the other end and a heat sink and the other end is in contact with the heat-dissipating metal; The hole through which the heat radiation metal is inserted is filled with a curable heat conductive resin, and the semiconductor chip and the heat radiation metal are fixed.

The above-mentioned heat-dissipating resin is filled inside the bottomless mortar-shaped resin retaining ring which is in contact with the inner edge of the hole through which the heat-dissipating metal is inserted and the back surface of the semiconductor chip.

[0009]

According to the present invention, the heat radiation metal for joining to the heat sink is in contact with the back surface of the semiconductor chip, and is hardened with the curable heat conductive resin. For this reason,
Since the semiconductor chip is not in direct contact with the heat sink, the impact applied to the heat sink from the outside is not directly transmitted to the semiconductor chip. Further, the heat generated from the semiconductor chip is conducted to the heat sink through both of the heat radiation metal and the heat conductive resin, so that the heat radiation efficiency from the back surface of the semiconductor chip is improved.

Further, the above-mentioned heat conductive resin is filled inside the bottomless mortar type resin retaining ring which is in contact with the inner edge of the hole of the cap through which the heat dissipation metal is inserted and the back surface of the semiconductor chip. Therefore, the airtightness inside the cap is maintained.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the accompanying drawings. In the description, the same elements will be denoted by the same reference symbols, without redundant description.

FIG. 1 is a perspective view showing the appearance of a multichip module as an embodiment of the present invention.

As shown in the figure, the multi-chip module according to this embodiment comprises a lower substrate 1, an upper substrate 2, a cap 3 and a heat sink 9. The lower substrate 1 is formed of an AlN (aluminum nitride) material, and a plurality of lead pins 10 connected to the electric circuit formed on the upper substrate 2 extend from the side surface of the lower substrate 1. The upper substrate 2 is made of a low dielectric constant insulating material,
For example, thermal resistance 3 ℃ / W, using a thermal via together, 3
An inch square polyimide multilayer wiring structure can be provided (“Copper polyimide multilayer wiring board”, HYBRIDS, Vol.7).
, No.1, p.10 to p.12).

The lower substrate 1 is composed of a flat plate larger than the upper substrate 2, and the upper substrate 2 is fixed in a stacked state on the upper surface thereof. An edge of the cap 3 is covered on the upper surface of the lower substrate 1 on which the upper substrate 2 does not overlap. Therefore, the upper substrate 2 is contained by the cap 3 and the lower substrate 1.

Electrodes are exposed on the surface of the upper substrate 2, and a semiconductor chip 5 connected to these electrodes is mounted. The semiconductor chip 5 is, for example, an IC chip of 10 mm square, and is connected to an electrode formed on the surface of the upper substrate 2 by a flip chip mounting method. Therefore, the circuit surface of the semiconductor chip 5 faces the upper substrate 2.

FIG. 2 is an enlarged view of the semiconductor chip 5 on the side of the cap 3. The cap 3 is formed with a hole 4a wider than the surface of the semiconductor chip 5, for example, at a position corresponding to the mounting position of the semiconductor chip 5. A bottomless mortar-shaped resin retaining ring 4 is provided from the inner edge of the hole 4a to the back surface of the semiconductor chip 5, and the back surface of the semiconductor chip 5 and the heat sink 9 are connected to each other to perform heat conduction.
Are installed on the semiconductor chip 5. Heat dissipation metal 7
A curable heat conductive resin (for example, a heat conductive epoxy resin) 6 is filled around the core, so that the heat radiation metal 7 is fixed on the semiconductor chip 5. A heat sink 9 is adhered to the upper surface of the cap 3 to which the heat-dissipating metal 7 is fixed by using a silicon resin 8.

The metal 7 for heat radiation and the heat sink 9 are made of a material having good thermal conductivity, such as Al, CuW, AlN,
CBN or the like is used. The heat sink 9 has a structure in which the surface area is large so that it is easily cooled naturally, and for example, a plurality of band-shaped convex portions are formed on the surface of the heat sink 9.

According to the above structure, the semiconductor chip 5 is not in direct contact with the heat sink 9, so that the impact applied to the heat sink 9 from the outside is not directly transmitted to the semiconductor chip 5. Further, the heat generated from the semiconductor chip 5 is conducted to the heat sink via the heat dissipation metal 7,
The heat generated from the back surface of the semiconductor chip 5 can be efficiently dissipated. Further, the conductive resin 6 is filled inside the bottomless mortar-shaped resin retaining ring 4 which is in contact with the inner edge of the hole 4a of the cap 3 through which the heat dissipation metal 7 is inserted and the back surface of the semiconductor chip 5. Therefore, the airtightness inside the cap 3 can be maintained.

[0019]

As described above, the structure according to the present invention can be applied to a semiconductor module having a semiconductor chip flip-chip mounted, and can prevent damage to the semiconductor chip even when an external shock is applied to the heat sink. it can. Furthermore, it is very effective in increasing the heat dissipation efficiency from the back surface of the semiconductor chip.

[Brief description of drawings]

FIG. 1 is a perspective view showing an internal structure of a semiconductor multi-chip module according to an embodiment of the present invention.

FIG. 2 is a diagram showing a structure of a resin-embedded portion that can be used in the semiconductor multi-chip module according to the embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Lower substrate, 2 ... Upper substrate, 3 ... Cap, 4 ... Resin holding ring, 5 ... Semiconductor chip, 6 ... Thermal conductive resin, 7 ... Heat dissipation metal, 8 ... Silicon resin, 9 ... Heat sink, 10
... lead pin.

Claims (2)

[Claims] 1. A substrate on which a wiring portion is formed, a semiconductor chip mounted on the wiring portion with a circuit surface facing, one end portion of the semiconductor chip opposite to the circuit surface, and the other end portion. Is provided with a heat-dissipating metal in contact with a heat sink, and a cap having a hole through which the other end of the heat-dissipating metal is inserted and which encloses the semiconductor chip. A semiconductor chip module, characterized in that the hole formed is filled with a curable heat conductive resin to fix the semiconductor chip and the heat radiation metal. 2. The thermally conductive resin is filled inside a bottomless mortar-shaped resin retaining ring that is in contact with the inner edge of the hole through which the heat-dissipating metal is inserted and the back surface of the semiconductor chip. The semiconductor chip module according to claim 1, wherein