JPH05150143A - Optical connector with built-in circuit - Google Patents
Optical connector with built-in circuitInfo
- Publication number
- JPH05150143A JPH05150143A JP31224991A JP31224991A JPH05150143A JP H05150143 A JPH05150143 A JP H05150143A JP 31224991 A JP31224991 A JP 31224991A JP 31224991 A JP31224991 A JP 31224991A JP H05150143 A JPH05150143 A JP H05150143A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- connector body
- connector
- optical connector
- built
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Mechanical Coupling Of Light Guides (AREA)
Abstract
(57)【要約】
【目的】 温度変化によるコネクタ本体のストレスをな
くしかつ組立も容易とする。
【構成】 コネクタ本体2それ自体を半導体材料で形成
し、この半導体材料にて回路6を形成するものである。
(57) [Summary] [Purpose] Eliminates stress on the connector body due to temperature changes and facilitates assembly. [Structure] The connector body 2 itself is made of a semiconductor material, and the circuit 6 is made of this semiconductor material.
Description
【0001】[0001]
【産業上の利用分野】本発明は、メモリやセンサ等の半
導体回路を内蔵した光コネクタに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical connector incorporating a semiconductor circuit such as a memory or a sensor.
【0002】[0002]
【従来の技術】光通信線路においては、その構造上コネ
クタが必要不可欠であり、線路が長くなる程その数は膨
大なものになる。かかる膨大な設備を効率良く運用・管
理してゆくに当り、例えば信学論(B−I),J74−
B−I,1.pp48−57(1991)で報告されて
いる様な線路設備管理システムが開発されている。つま
り、光コネクタにメモリ等の部品を取付けてメモリ内に
接続・結線状況、設置場所、設置時期、種類、材質、構
造等線路の設計、保守、運用に当って重要な情報を格納
し、その情報をコントローラで取り出し、通信してホス
トコンピュータにて管理するシステムが開発されてい
る。2. Description of the Related Art In an optical communication line, a connector is indispensable due to its structure, and the number of lines becomes enormous as the line becomes longer. In efficiently operating and managing such a huge amount of equipment, for example, the Theological Theory (BI), J74-
BI, 1. A track facility management system as reported in pp48-57 (1991) has been developed. In other words, attach parts such as memory to the optical connector and store the important information for line design, maintenance and operation such as connection / connection status, installation location, installation time, type, material, structure, etc. in the memory. A system has been developed in which information is taken out by a controller, communicated, and managed by a host computer.
【0003】この場合、光コネクタには、メモリやA/
Dコンバータ等のIC部品が搭載された構造のものが従
来より提案されている。すなわち、光コネクタのうち図
2に示す片方のコネクタには、光ファイバ1を案内固定
するコネクタ本体2と、このコネクタ本体2を一体化し
た他の片方のコネクタとの位置決め用ガイド孔3を有す
るモールド部4とが備えられ、コネクタ本体2には例え
ば図3に示すようにIC部品5が装着された構造となっ
ている。In this case, the optical connector includes a memory and an A /
A structure having an IC component such as a D converter mounted therein has been conventionally proposed. That is, one of the optical connectors shown in FIG. 2 has a connector main body 2 for guiding and fixing the optical fiber 1, and a positioning guide hole 3 for the other one connector in which the connector main body 2 is integrated. A mold portion 4 is provided, and an IC component 5 is attached to the connector body 2 as shown in FIG. 3, for example.
【0004】[0004]
【発明が解決しようとする課題】しかしながら、コネク
タ本体2に取付けられたIC部品5は、それ自体発熱体
であり、このIC部品や接着材およびコネクタ本体2の
熱膨張係数が異るため、コネクタ本体2の部分的な加熱
等によってコネクタ本体2にストレスが加わり光ファイ
バ1にストレスを与えることとなって接続ロスが増大す
るという問題がある。However, since the IC component 5 attached to the connector body 2 is itself a heating element, and the thermal expansion coefficient of the IC component and the adhesive material and the connector body 2 are different, There is a problem that stress is applied to the connector main body 2 due to partial heating of the main body 2 and stress on the optical fiber 1, resulting in an increase in connection loss.
【0005】また、IC部品5の接着等光コネクタの製
作に当って製作工数が煩雑となるという問題がある。Further, there is a problem that the number of manufacturing steps becomes complicated when manufacturing the optical connector such as bonding the IC component 5.
【0006】本発明は、上述の問題に鑑み接続ロスが少
なく組立て工数も少ない回路内蔵型光コネクタの提供を
目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object thereof is to provide an optical connector with a built-in circuit which has a small connection loss and a small number of assembling steps.
【0007】[0007]
【課題を解決するための手段】上述の目的を達成する本
発明は、光ファイバを保持してその端面どおしを接合す
る光コネクタ本体を半導体材料にて形成し、この半導体
材料自体に回路を形成したことを特徴とする。SUMMARY OF THE INVENTION In order to achieve the above object, the present invention provides an optical connector body for holding an optical fiber and joining its end faces with a semiconductor material, and a circuit is formed in the semiconductor material itself. Is formed.
【0008】[0008]
【作用】コネクタ本体をそれ自体回路が形成される半導
体材料にて形成したことにより、材質の違いによるスト
レスの発生がなくなると共に、従来の如く別個のIC部
品の取付けも無くなり組立が容易となる。Since the connector body is made of a semiconductor material on which the circuit itself is formed, the stress due to the difference in material is eliminated, and separate IC parts are not attached as in the conventional case, and the assembly is facilitated.
【0009】[0009]
【実施例】ここで、図1を参照して本発明の実施例を説
明する。図1にて図3と同一部分には同符号を付す。図
1にて、光ファイバ1を案内・固定するコネクタ本体2
はそれ自体例えばSiやGaAs等からなる半導体材料
にて作られている。この半導体材料であるコネクタ本体
2の表面には、メモリやセンサ等のIC回路6が形成さ
れている。そして、このIC回路6の端子7がコネクタ
本体2より突出するように被着形成されている。このI
C回路6の形成な、公知の半導体製造技術によりおこな
われる。こうして、回路とコネクタ本体2とが一体に形
成されることになる。EXAMPLE An example of the present invention will now be described with reference to FIG. 1, the same parts as those in FIG. 3 are designated by the same reference numerals. In FIG. 1, a connector body 2 for guiding and fixing the optical fiber 1
Is itself made of a semiconductor material such as Si or GaAs. An IC circuit 6 such as a memory or a sensor is formed on the surface of the connector body 2 which is a semiconductor material. The terminals 7 of the IC circuit 6 are attached and formed so as to project from the connector body 2. This I
The formation of the C circuit 6 is performed by a known semiconductor manufacturing technique. In this way, the circuit and the connector body 2 are integrally formed.
【0010】図4は、従来例と実施例との温度による接
続損失比をあらわしたものであり、室温25℃を基準と
して従来では損失が低温や高温になるにつれて増大する
のに対し、本実施例では損失が増大することなく略一定
の値を示している。FIG. 4 shows the splice loss ratio according to temperature between the conventional example and the example. In the present example, the loss increases as the temperature becomes lower or higher with the room temperature of 25 ° C. as a reference. In the example, the loss is not increased and the value is almost constant.
【0011】[0011]
【発明の効果】以上説明したように本発明によれば、コ
ネクタ本体自体に回路を形成することができ、熱膨張係
数の違いによるストレスの発生もなくなり、接続損失の
増大もなく、また、同一材質にてパッケージ化も可能と
なり組み立て作業も容易になる。As described above, according to the present invention, it is possible to form a circuit in the connector body itself, no stress is generated due to a difference in thermal expansion coefficient, no increase in connection loss, and the same. The material can be packaged and the assembly work is easy.
【図1】本実施例のコネクタ本体の斜視図。FIG. 1 is a perspective view of a connector body of the present embodiment.
【図2】光コネクタの片方の部分斜視図。FIG. 2 is a partial perspective view of one side of the optical connector.
【図3】従来のコネクタ本体の斜視図。FIG. 3 is a perspective view of a conventional connector body.
【図4】温度に対する接続損失比の特性図。FIG. 4 is a characteristic diagram of a connection loss ratio with respect to temperature.
1 光ファイバ 2 コネクタ本体 6 IC回路 7 端子 1 optical fiber 2 connector body 6 IC circuit 7 terminal
───────────────────────────────────────────────────── フロントページの続き (72)発明者 柿井 俊昭 神奈川県横浜市栄区田谷町1番地 住友電 気工業株式 会社 横浜製作所内 (72)発明者 斉藤 和人 神奈川県横浜市栄区田谷町1番地 住友電 気工業株式 会社 横浜製作所内 (72)発明者 大槻 文男 東京都千代田区内幸町一丁目1番6号 日 本電信電話株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Toshiaki Kakinai 1 Taya-cho, Sakae-ku, Yokohama-shi, Kanagawa Sumitomo Electric Industries, Ltd. Yokohama Works (72) Inventor Kazuto Saito 1 Taya-cho, Sakae-ku, Yokohama, Kanagawa Sumitomo Electric Industrial Co., Ltd., Yokohama Works (72) Inventor Fumio Otsuki 1-1-6, Uchisaiwaicho, Chiyoda-ku, Tokyo Nihon Telegraph and Telephone Corporation
Claims (1)
接合する光コネクタ本体を半導体材料にて形成し、この
半導体材料自体に回路を形成した回路内蔵型光コネク
タ。1. An optical connector with a built-in circuit in which an optical connector body for holding an optical fiber and joining its end faces to each other is formed of a semiconductor material, and a circuit is formed on the semiconductor material itself.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31224991A JPH05150143A (en) | 1991-11-27 | 1991-11-27 | Optical connector with built-in circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31224991A JPH05150143A (en) | 1991-11-27 | 1991-11-27 | Optical connector with built-in circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05150143A true JPH05150143A (en) | 1993-06-18 |
Family
ID=18026963
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP31224991A Withdrawn JPH05150143A (en) | 1991-11-27 | 1991-11-27 | Optical connector with built-in circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH05150143A (en) |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003010771A1 (en) * | 2001-07-23 | 2003-02-06 | Motorola, Inc. A Corporation Of The State Of Delaware | Memory system with independently accessible memory subsystems |
WO2003060582A1 (en) * | 2002-01-15 | 2003-07-24 | Tokyo Communication Equipment Mfg. Co., Ltd. | Optical connector having memory function |
US6855992B2 (en) | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
US6885065B2 (en) | 2002-11-20 | 2005-04-26 | Freescale Semiconductor, Inc. | Ferromagnetic semiconductor structure and method for forming the same |
US6916717B2 (en) | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
US6965128B2 (en) | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
US6992321B2 (en) | 2001-07-13 | 2006-01-31 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
US7005717B2 (en) | 2000-05-31 | 2006-02-28 | Freescale Semiconductor, Inc. | Semiconductor device and method |
US7020374B2 (en) | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
US7019332B2 (en) | 2001-07-20 | 2006-03-28 | Freescale Semiconductor, Inc. | Fabrication of a wavelength locker within a semiconductor structure |
US7045815B2 (en) | 2001-04-02 | 2006-05-16 | Freescale Semiconductor, Inc. | Semiconductor structure exhibiting reduced leakage current and method of fabricating same |
US7067856B2 (en) | 2000-02-10 | 2006-06-27 | Freescale Semiconductor, Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
US7105866B2 (en) | 2000-07-24 | 2006-09-12 | Freescale Semiconductor, Inc. | Heterojunction tunneling diodes and process for fabricating same |
US7161227B2 (en) | 2001-08-14 | 2007-01-09 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices for detecting an object |
US7169619B2 (en) | 2002-11-19 | 2007-01-30 | Freescale Semiconductor, Inc. | Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process |
US7211852B2 (en) | 2001-01-19 | 2007-05-01 | Freescale Semiconductor, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
US7342276B2 (en) | 2001-10-17 | 2008-03-11 | Freescale Semiconductor, Inc. | Method and apparatus utilizing monocrystalline insulator |
-
1991
- 1991-11-27 JP JP31224991A patent/JPH05150143A/en not_active Withdrawn
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7067856B2 (en) | 2000-02-10 | 2006-06-27 | Freescale Semiconductor, Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
US7005717B2 (en) | 2000-05-31 | 2006-02-28 | Freescale Semiconductor, Inc. | Semiconductor device and method |
US7105866B2 (en) | 2000-07-24 | 2006-09-12 | Freescale Semiconductor, Inc. | Heterojunction tunneling diodes and process for fabricating same |
US7211852B2 (en) | 2001-01-19 | 2007-05-01 | Freescale Semiconductor, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
US7045815B2 (en) | 2001-04-02 | 2006-05-16 | Freescale Semiconductor, Inc. | Semiconductor structure exhibiting reduced leakage current and method of fabricating same |
US6992321B2 (en) | 2001-07-13 | 2006-01-31 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
US7019332B2 (en) | 2001-07-20 | 2006-03-28 | Freescale Semiconductor, Inc. | Fabrication of a wavelength locker within a semiconductor structure |
WO2003010771A1 (en) * | 2001-07-23 | 2003-02-06 | Motorola, Inc. A Corporation Of The State Of Delaware | Memory system with independently accessible memory subsystems |
US6855992B2 (en) | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
US7161227B2 (en) | 2001-08-14 | 2007-01-09 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices for detecting an object |
US7342276B2 (en) | 2001-10-17 | 2008-03-11 | Freescale Semiconductor, Inc. | Method and apparatus utilizing monocrystalline insulator |
WO2003060582A1 (en) * | 2002-01-15 | 2003-07-24 | Tokyo Communication Equipment Mfg. Co., Ltd. | Optical connector having memory function |
US6916717B2 (en) | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
US7169619B2 (en) | 2002-11-19 | 2007-01-30 | Freescale Semiconductor, Inc. | Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process |
US6885065B2 (en) | 2002-11-20 | 2005-04-26 | Freescale Semiconductor, Inc. | Ferromagnetic semiconductor structure and method for forming the same |
US7020374B2 (en) | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
US6965128B2 (en) | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19990204 |