JPH05144897A - Semiconductor integrated circuit test equipment - Google Patents

Abstract

(57) [Summary] [PROBLEMS] A semiconductor integrated circuit test apparatus having a probe card provided with a plurality of probes to be brought into contact with pads of a semiconductor wafer, and an object thereof is to improve throughput in mounting the probes. [Structure] A wiring pattern 3 formed under a probe card substrate 1 at a position having the same size and passing through the same arrangement as a plurality of pads of a semiconductor device to be tested, and attached under the wiring pattern 3 in a thickness direction. Columnar conductive portion 5a extending to
A plurality of rubber plates 5, a flexible support plate 4 which is attached to the lower surface of the rubber plate 5 below the wiring pattern 3, and a probe 6 having a tip protruding downward is inserted therein; Pressing members 8 and 9 which penetrate the support plate 4 in the region surrounded by 6 and are inserted into the probe card substrate 1 and sink the support plate 4 toward the probe card substrate 1 to tilt the probe 6 inward. The probe card consists of the following items.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit testing device, and more particularly to a semiconductor integrated circuit testing device having a probe card provided with a plurality of probes for contacting pads of a semiconductor wafer during a test.

[0002]

2. Description of the Related Art When testing a semiconductor integrated circuit formed on a semiconductor wafer, an apparatus as illustrated in FIG. 5 is used.

This device comprises a stage 51 on which a semiconductor wafer w is placed, a probe card 52 for supplying power and signals to the semiconductor wafer w, a performance board 53 electrically connected to the probe card 52, and a performance board 53. It has a tester head 54 connected to the board 53, and is configured to apply a power supply voltage, a ground voltage, a signal and the like to the semiconductor wafer w through them.

As shown in FIG. 6 (a), the probe card 52 has a window 55 formed in the center and a plurality of pads 56 formed in the region along the periphery of the upper surface, while needles are formed on the lower surface. The probe 57 is attached, and the probe 57 has a structure in which the probe 57 is electrically connected to the pad 56 via the internal wiring.

In the test, the probe 57 is brought into contact with a wiring pad (not shown) on the wafer w to supply power and signals to the semiconductor integrated circuit. By the way, when attaching the probe 57 to the main body of the probe card 52, the probe 57 is supported by the resin material 58 around the window 55, the tip thereof is set at a predetermined position in the window 55, and the rear end thereof is set to the probe card 52. A method of attaching solder 59 to the main body is adopted.

Generally, the wiring pad (not shown) of the semiconductor integrated circuit formed on the semiconductor wafer w is made of aluminum, and since the oxide film on the surface thereof interferes with conduction, the probe 57 is brought into contact with the wiring pad. In this case, the tip of the probe 57 is slid on the surface of the wiring pad by the bending of the probe 57 to scrape off the oxide film.

[0007]

However, according to the above-mentioned structure, since the final fine adjustment of the position when the probe 57 is mounted is done manually, the number of wiring pads of the semiconductor integrated circuit increases and those fine adjustments are required. There is a problem that it takes time and effort to adjust as the interval becomes narrower.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a semiconductor integrated circuit test apparatus capable of improving the throughput when attaching probes to a probe card.

[0009]

[Means for Solving the Problems]
As illustrated in FIG. 3, a wiring pattern 3 formed under the insulating probe card substrate 1 at a position having the same size and passing the same arrangement as a plurality of pads of the semiconductor device to be tested.
A rubber plate 5 attached under the wiring pattern 3 and having a plurality of columnar conductive portions 5a extending in the thickness direction at substantially the same density; A flexible support plate 4 mounted on the lower surface of the probe 5 and having the probes 6, 10 and 11 protruding downwardly.
And penetrates the support plate 4 in a region surrounded by the plurality of probes 6, 10 and 11 and is inserted into the probe card substrate 1, and the support plate 4 is attached to the probe card substrate 1.
This is achieved by a semiconductor integrated circuit test apparatus characterized by comprising a probe card composed of pressing members 8 and 9 which are depressed in a direction to tilt the probes 6, 10 and 11 inward.

Alternatively, as shown in FIG. 3 (c), the semiconductor integrated circuit testing apparatus is characterized in that a metal film 6c is formed on the surface of the probe 6. Alternatively, as illustrated in FIG. 4 (a), the probe
This is achieved by the semiconductor integrated circuit testing device, wherein the tip of 10 is formed in a hemispherical shape.

Alternatively, as shown in FIG. 4 (b), the probe 11 is formed in a U shape, and a curved portion of the probe 11 projects to the opposite side of the rubber plate 5 from the semiconductor integrated circuit. Achieved by circuit test equipment.

[0012]

[Operation] According to the present invention, the flexible support plate 4 to which the plurality of probes 6 are attached is attached to the lower surface of the rubber plate 5, and screws are attached to the support plate 4 in the region surrounded by the plurality of probes 6. The support plate 4 is sunk by penetrating the pressing members 8 and 9 such as a contact plate and the like, whereby the probe 6 is tilted inward.

Therefore, the fine adjustment of the position of the probe 6 is performed only by changing the depth of the pressing members 8 and 9, and it is possible to perform the fine adjustment all at once regardless of the number of the probes 6.
Adjustment work is reduced.

Further, when the probe 6 is applied to the wiring pad of the semiconductor integrated circuit, the oxide film on the surface of the wiring pad is scraped off due to the displacement of the inclined probe 6, but according to the second invention, the probe is used. Since the metal film 6c is attached to the tip of 6 to make it rounded, the wiring pad is not deeply damaged, and the degree of damage is greatly reduced.

Further, as in the third invention, the probe 1
When the tip of 0 is formed in a hemispherical shape, damage to the wiring pad is further reduced. Further, when the probe 11 is formed in a U-shape as in the fourth aspect of the invention, the tip of the probe becomes large. Therefore, when bumps are formed on the semiconductor integrated circuit,
Positioning with the bump becomes easy.

[0016]

Embodiments of the present invention will be described below with reference to the drawings. (A) Description of First Embodiment of the Present Invention FIGS. 1 to 3 are a side view and a cross-sectional view showing an apparatus according to an embodiment of the present invention.

In the figure, reference numeral 1 is an insulating probe card substrate having a conductive pad 2 near the periphery of the upper surface, and a region near the center of the lower surface thereof is a test object as shown in FIG. 2 (b). A wiring pattern 3 is formed at a position corresponding to the wiring pad p of the semiconductor device chip C, and the wiring pattern 3 is formed on the upper surface of the probe card substrate 1 via internal wiring (not shown) and through holes 2a. It is configured to be electrically connected to the conductive pad 2. The tip width and the pattern pitch of the wiring pattern 3 are several tens to hundreds of tens of μm, and the width of one side forming the through hole 2a is several mm to tens of mm.

Reference numeral 4 denotes a flexible probe support plate which is attached to the lower surface of the probe card substrate 1 via an elastic rubber plate 5 as shown in FIGS. 2 (a), 3 (a) and 3 (b). , Which is formed of an insulating sheet such as polyimide, and the probe 6 described later is attached at the same position as the wiring pad p of the semiconductor device chip C or at a position enlarged proportionally. Further, the probe support plate 4 is fixed to the rubber plate 5 by screws 7a from two corners on the diagonal line, and is fixed to the probe card substrate 1 together with the rubber plate 5 by screws 7b penetrating the remaining two corners. (Fig. 2 (c)).

In a region of the probe support plate 4 surrounded by the plurality of probes 6, a semiconductor device chip C is reduced in size, for example, a quadrangular contact plate 8 has a screw 9 having a length reaching the probe card substrate 1. Is fixed by inserting the screw 9 deeply as shown in FIG. 3 (b).
The probe 6 is configured to be tilted inward at a desired angle by submerging.

As shown in FIG. 3 (b), the rubber plate 5 has a columnar conductive portion 5 extending in the thickness direction and having a width of several μm.
a is a plurality of insulating rubber plate materials scattered in the surface direction at intervals of several μm. The wiring pattern 3 is drawn downward while insulating the wiring patterns 3 on the lower surface of the probe card substrate 1 from each other. ing.

The above-mentioned probe 6 is to be brought into contact with the wiring pad p at the time of testing the semiconductor device.
As shown in FIG. 4, a pyramidal needle 6a made of metal such as W (tungsten), Pd (palladium), BeCu (beryllium copper) is vertically inserted into the probe support plate 4 to expose the tip from the lower surface of the probe support plate 4. In addition, the upper and lower sides of the probe 6 are fixed to the probe support plate 4 by a metallic adhesive 6b, and a metal film 6c of Au or the like is formed on the surface of the adhesive 6b. It is connected to the wiring pattern 3 on the lower surface of the probe card substrate 1 through the columnar conductive portion 5a. The length of the probe 6 is about several hundred μm, and the tip diameter is about 20 to several tens μm.

Next, the operation of the above embodiment will be described. In the above-described embodiment, the probe 6 is formed at a position equal to or slightly enlarged in proportion to the wiring pad p of the semiconductor device chip C, and the probe 6 is changed by changing the depth of the screw 9 for mounting the contact plate 8. 6 is tilted so that its tip is finely adjusted for alignment.

For this reason, fine adjustment of the position of the probe 6 is performed only by changing the depth of the contact plate 8, and it is possible to perform the fine adjustment all at once regardless of the number of the probes 6, and the labor of adjustment is reduced. It

When the probe 6 is applied to the wiring pad p of the semiconductor integrated circuit formed on the semiconductor device chip C, the displacement of the tilted probe 6 causes the oxide film on the surface of the wiring pad p to be scraped off. Since the metal film 6c is attached to the tip of the probe 6 to make it round, the wiring pad p is not deeply damaged, and the degree of damage is greatly reduced.

As shown in FIG. 2C, since the support plate 4 is fixed to the rubber plate 5 with the screw 7a, these are attached to the probe card board 1 with the other screw 7b. It becomes easy to replace them, and labor is reduced. Moreover, the probe 6 is attached with the rubber plate 5 removed from the probe card substrate 1, which facilitates the attachment work.

(B) Description of Other Embodiments of the Present Invention In the above-mentioned embodiment, the probe was formed in a pyramidal shape. However, as shown in FIG. 4 (a), the tip of the probe 10 is formed in a hemispherical shape. The tip may be rounded. According to this, damage to the wiring pad p can be further reduced.

In the figure, reference numeral 10a is a needle, 10b is an adhesive, and 10c is a metal film. Alternatively, as shown in FIG. 4 (b), the probe 11 may be formed in a U-shape, and the curved portion thereof may be projected to the side opposite to the probe card substrate 1 and inserted into the support plate 6. According to this, when the semiconductor device chip C on which the bumps are formed is tested,
Since the tip of the probe 11 is large, alignment with the bump becomes easy.

In the figure, reference numeral 11a is a needle, 11b is an adhesive, and 11c is a metal film. Further, in the above-mentioned embodiment, the screws are used to sink the support plate 4, but bolts, nails or the like may be used.

[0029]

As described above, according to the present invention, a flexible support plate having a plurality of probes attached thereto is attached to the lower surface of a rubber plate, and a screw is attached to the support plate in the region surrounded by the plurality of probes. Since the support plate is sunk by applying a pressing member such as a touch plate or a contact plate, and the probe is tilted inward, fine adjustment of the probe position only changes the depth of the pressing member. Regardless of the above, it is possible to perform them all at once, and it is possible to reduce the trouble of adjustment.

Moreover, since the probe can be replaced by attaching and detaching the rubber plate with the support plate attached, the labor of attachment can be reduced. In addition, when the probe is applied to the wiring pad of the semiconductor integrated circuit, the oxide film on the surface of the wiring pad is scraped off due to the displacement of the tilted probe. Since the film is attached and rounded, the degree of damage to the wiring pad can be significantly reduced.

Further, according to the third invention, since the tip of the probe is formed in a hemispherical shape, the damage to the wiring pad can be further reduced. Further, according to the fourth aspect of the invention, since the probe is formed in a U-shape, the tip of the probe becomes large and the alignment with the bump protruding from the semiconductor integrated circuit becomes easy.

[Brief description of drawings]

FIG. 1 is a plan view showing an apparatus according to an embodiment of the present invention.

FIG. 2 is a side view and a plan view showing an apparatus according to an embodiment of the present invention.

FIG. 3 is an exploded view and a partial sectional view showing an apparatus according to an embodiment of the present invention.

FIG. 4 is a partial cross-sectional view of another embodiment of the present invention.

FIG. 5 is a side view showing a configuration of a probe card peripheral device in the test apparatus.

FIG. 6 is a plan view and a side view showing an example of a conventional device.

[Explanation of symbols]

 1 Probe Card Board 2 Pad 3 Wiring Pattern 4 Support Plate 5 Rubber Plate 5a Conductive Part 6 Probe 6a Needle 6b Adhesive Material 6c Metallic Film 7 Screw 8 Contact Plate (Pressing Member) 9 Screw (Pressing Member) 10 Probe 11 Probe

Claims (4)

[Claims] 1. A wiring pattern (3) formed under an insulative probe card substrate (1) at a position having the same size and passing through the same arrangement as a plurality of pads of a semiconductor device to be tested, and the wiring. A rubber plate (5) attached below the pattern (3) and having a plurality of columnar conductive portions (5a) extending in the thickness direction at substantially the same density, and below the wiring pattern (3). Flexible support plate (4) mounted on the lower surface of the rubber plate (5) and into which the probes (6, 10, 11) having tips protruding downward are inserted.
And penetrating the support plate (4) in a region surrounded by a plurality of the probes (6, 10, 11) to be inserted into the probe card substrate (1), and the support plate (4) to the probe. Semiconductor integrated circuit test, comprising a probe card comprising a pressing member (8, 9) which sinks in the direction of the card substrate (1) and tilts the probe (6, 10, 11) inward. apparatus. 2. The semiconductor integrated circuit testing device according to claim 1, wherein a metal film (6c, 10c, 11c) is formed on a surface of the probe (6, 10, 11). 3. The semiconductor integrated circuit testing device according to claim 1, wherein a tip of the probe (10) is formed in a hemispherical shape. 4. The semiconductor integrated circuit testing device according to claim 1, wherein the probe (11) is formed in a U shape, and a curved portion of the probe (11) projects to the side opposite to the rubber plate (5). ..