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JPH05135909A - Contact type thin-film thermistor - Google Patents

Contact type thin-film thermistor

Info

Publication number
JPH05135909A
JPH05135909A JP29410491A JP29410491A JPH05135909A JP H05135909 A JPH05135909 A JP H05135909A JP 29410491 A JP29410491 A JP 29410491A JP 29410491 A JP29410491 A JP 29410491A JP H05135909 A JPH05135909 A JP H05135909A
Authority
JP
Japan
Prior art keywords
pair
plate
shaped
thin film
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP29410491A
Other languages
Japanese (ja)
Other versions
JP2734840B2 (en
Inventor
Takeshi Nagai
彪 長井
Katsumi Sasada
勝視 佐々田
Shuji Ito
修治 伊藤
Kenzo Ochi
謙三 黄地
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP29410491A priority Critical patent/JP2734840B2/en
Publication of JPH05135909A publication Critical patent/JPH05135909A/en
Application granted granted Critical
Publication of JP2734840B2 publication Critical patent/JP2734840B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To improve heat resistance, and to obtain high-speed response by composing a contact type thin-film thermistor of a thin-film thermistor element, a pair of flat metallic leads and an insulating supporter, to which a baked glass film is formed. CONSTITUTION:Electrode films 7a, 7b and conductive members 8a, 8b in a pair of through-holes 6a, 6b are formed to one surface of a plate-shaped alumina substrate 5 with the through-holes 6a, 6b. A thermo-sensitive resistor 9 is shaped onto the electrode films 7a, 7b and the substrate 5. A pair of flat metallic leads 10a, 10b and the conductive members 8a, 8b are connected by adhesive conductive sintered bodies 11a, 11b. On the other hand, a baked glass film 13 is formed onto one surface of an insulating supporter 12. The side, On which the flat metallic leads 10a, 10b are shaped, in the alumina substrate 5 is laminated onto the baked glass film 13. A glass sintered body 14 is shaped so as to include the metallic leads 10a, 10b. Accordingly, a thermistor having high heat resistance and high-speed response can be acquired.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は対象物表面と機械的に接
触して、その表面温度を検出できる表面温度センサに関
するものであって、特に400〜500℃の高温度まで
使用できる接触型薄膜サーミスタに関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface temperature sensor capable of detecting the surface temperature of an object by mechanically contacting the surface of the object, and particularly to a contact type thin film which can be used up to a high temperature of 400 to 500 ° C. It is about the thermistor.

【0002】[0002]

【従来の技術】従来、この種の表面温度センサは、図2
に示すように、硝子封止型サーミスタ1素子から成る温
度検知素子にリード線2,2’を接続し、前記硝子封止
型サーミスタ1を金属板3に樹脂4で接着して構成され
る。前記金属板3を対象物の表面にビス止めなどにより
機械的に接触させて、その表面温度を検出していた(例
えば、特公昭60−125535号公報)。
2. Description of the Related Art Conventionally, a surface temperature sensor of this type is shown in FIG.
As shown in FIG. 4, the lead wires 2 and 2 ′ are connected to the temperature detecting element composed of the glass-encapsulated thermistor 1 element, and the glass-encapsulated thermistor 1 is bonded to the metal plate 3 with the resin 4. The metal plate 3 is mechanically brought into contact with the surface of the object by screwing or the like to detect the surface temperature (for example, Japanese Patent Publication No. 60-125535).

【0003】[0003]

【発明が解決しようとする課題】しかしながら、上記の
ような構成では、硝子封止型サーミスタ素子1が金属板
3に樹脂4で接着されており、樹脂4の耐熱温度は通
常、約200℃以下であるので、最高使用温度も約20
0℃以下に制限されるという問題があった。
However, in the above configuration, the glass-sealed thermistor element 1 is bonded to the metal plate 3 with the resin 4, and the heat resistant temperature of the resin 4 is usually about 200 ° C. or less. Therefore, the maximum operating temperature is about 20
There was a problem that the temperature was limited to 0 ° C or lower.

【0004】また、硝子封止型サーミスタ素子1は円筒
状の形状を有するので、金属板3と硝子封止型サーミス
タ素子1の間の熱伝達が悪く、このため熱応答性が遅い
(90%熱応答時間は20sec以上)という問題もあ
った。
Further, since the glass-sealed thermistor element 1 has a cylindrical shape, the heat transfer between the metal plate 3 and the glass-sealed thermistor element 1 is poor, and the thermal response is slow (90%). There is also a problem that the thermal response time is 20 sec or more).

【0005】本発明はかかる従来の問題点を解消するも
ので、従来よりも高耐熱性で、良好な高速応答性にする
ことを目的にしている。
The present invention solves the above-mentioned problems of the prior art, and an object of the present invention is to provide a higher heat resistance than that of the prior art and a good high-speed response.

【0006】[0006]

【課題を解決するための手段】上記課題を解決するため
に、本発明の接触型薄膜サーミスタは、薄膜サーミスタ
素子と一対の板状金属リード線と絶縁性支持体から構成
され、前記薄膜サーミスタ素子は平板状アルミナ基板
と、前記平板状アルミナ基板に設けられた一対の貫通口
と、前記平板状アルミナ基板の一方の表面から他の表面
にわたり電気的に導通して、前記貫通口を貫通して配置
された一対の導電性部材と、前記平板状アルミナ基板の
前記一方の表面に前記貫通口を含んで配置された一対の
電極膜と、前記一対の電極膜に積層して配置された感温
抵抗体膜とから構成され、前記一対の板状金属リード線
は前記薄膜サーミスタ素子の前記平板状アルミナ基板の
前記他の表面で前記一対の貫通口と対向するように配置
され、前記一対の導電性部材と前記一対の板状金属リー
ド線がそれぞれ接着性導電性焼結体で接続され、前記平
板状絶縁性支持体は一方の表面に硝子膜が形成され、前
記一対の板状金属リード線の接続された前記薄膜サーミ
スタ素子を前記絶縁性支持体の一方の表面に配置し、前
記一対の板状金属リード線を含み前記薄膜サーミスタ素
子の周囲を硝子焼結体で被覆した構成を備えたものであ
る。
In order to solve the above problems, a contact type thin film thermistor of the present invention comprises a thin film thermistor element, a pair of plate-shaped metal lead wires and an insulating support, and the thin film thermistor element is provided. Is a plate-shaped alumina substrate, a pair of through-holes provided in the plate-shaped alumina substrate, and electrical conduction from one surface of the plate-shaped alumina substrate to the other surface, through the through-hole. A pair of conductive members arranged, a pair of electrode films arranged to include the through hole on the one surface of the flat alumina substrate, and a temperature-sensitive layer laminated on the pair of electrode films. And a pair of plate-shaped metal lead wires arranged on the other surface of the flat plate-shaped alumina substrate of the thin-film thermistor element so as to face the pair of through-holes. Member and the pair of plate-shaped metal lead wires are respectively connected by an adhesive conductive sintered body, a glass film is formed on one surface of the plate-shaped insulating support, and the pair of plate-shaped metal lead wires The thin film thermistor element connected to is disposed on one surface of the insulating support, and the thin film thermistor element including the pair of plate-shaped metal lead wires is covered with a glass sintered body. It is a thing.

【0007】[0007]

【作用】本発明は上記した構成によって、樹脂などの有
機物材料を全く使用していないので、最高使用温度は高
くなる。すなわち、平板状アルミナ基板、硝子焼結体、
電極膜、接着性導電性焼結体などは、高温焼成工程を経
て形成されるので、従来以上の高耐熱性を容易に得られ
る。また、絶縁性支持体にアルミナ板、導電性部材に導
電性焼結体を使用することにより、同様の耐熱性が容易
に得られる。従って、本発明の薄膜サーミスタの耐熱性
は、結局、感温抵抗体膜の耐熱性に依存する。この耐熱
性は感温抵抗体膜の材質、形成条件により決められる
が、例えばSiCスパッタ感温抵抗体膜を用いることに
より、最高使用温度500℃が得られる。
According to the present invention, since the organic material such as resin is not used at all, the maximum operating temperature becomes high. That is, a flat alumina substrate, a glass sintered body,
Since the electrode film, the adhesive conductive sintered body and the like are formed through a high temperature firing step, it is possible to easily obtain higher heat resistance than ever before. The same heat resistance can be easily obtained by using an alumina plate for the insulating support and a conductive sintered body for the conductive member. Therefore, the heat resistance of the thin film thermistor of the present invention is ultimately dependent on the heat resistance of the temperature sensitive resistor film. This heat resistance is determined by the material of the temperature sensitive resistor film and the forming conditions. For example, a maximum temperature of 500 ° C. can be obtained by using a SiC sputtered temperature sensitive resistor film.

【0008】また、薄膜サーミスタ素子は平板状の形状
を有するので、絶縁性支持体と薄膜サーミスタ素子の間
の熱伝達は、従来の円筒状硝子封止型サーミスタ素子と
金属板の間の熱伝達に比べ優れ、このため熱応答性も速
くなる。
Since the thin film thermistor element has a flat plate shape, the heat transfer between the insulating support and the thin film thermistor element is higher than that between the conventional cylindrical glass sealed thermistor element and the metal plate. It is excellent, and the thermal response is also fast.

【0009】[0009]

【実施例】以下、本発明の実施例を添付図面にもとづい
て説明する。図1は本発明の接触型薄膜サーミスタの一
実施例を示す断面図である。平板状アルミナ基板5の対
向する位置に一対の貫通口6a,6bを設けている。平
板状アルミナ基板5の形状は、幅2mm、長さ6mm、
厚さ0.5mm、また一対の貫通口6a,6bの直径は
0.5mmとした。平板状アルミナ基板5の一方の表面に
一対の貫通口6a,6bを含んで電極用導電性ペースト
を印刷した後、乾燥・焼成して一対のAu−Pt厚膜電
極膜7a,7bを形成し、この後、貫通口用導電性ペー
ストを貫通口6a,6bの内表面上もしくは空間部に印
刷した後、乾燥・焼成して導電性部材8a,8bを形成
する。平板状アルミナ基板5の一方の表面から他の表面
にわたり電気的に導通するように、この一対の厚膜電極
膜7a,7bと一対の導電性部材8a,8bとは、一対
の導電性部材8a,8bの端部で電気的に接続されてい
る。電極用導電性ペースト、貫通口用導電性ペーストと
して、例えば、Agペースト、Ag−Pdペースト、A
u−Ptペーストなどが用いられる。この後、スパッタ
法により炭化ケイ素(SiC)感温抵抗体膜9を平板状
アルミナ基板5の一方の表面に形成して、薄膜サーミス
タ素子を構成する。
Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a sectional view showing an embodiment of the contact type thin film thermistor of the present invention. A pair of through holes 6a and 6b are provided at opposite positions of the flat alumina substrate 5. The flat alumina substrate 5 has a width of 2 mm and a length of 6 mm,
The thickness was 0.5 mm, and the diameter of the pair of through holes 6a and 6b was 0.5 mm. A conductive paste for electrodes including a pair of through holes 6a and 6b is printed on one surface of the flat alumina substrate 5 and then dried and baked to form a pair of Au-Pt thick film electrode films 7a and 7b. After that, the conductive paste for through-holes is printed on the inner surfaces of the through-holes 6a and 6b or on the space, and then dried and fired to form the conductive members 8a and 8b. The pair of thick film electrode films 7a and 7b and the pair of conductive members 8a and 8b are arranged so as to be electrically connected from one surface of the flat alumina substrate 5 to the other surface thereof. , 8b are electrically connected at their ends. Examples of the conductive paste for electrodes and the conductive paste for through holes include Ag paste, Ag-Pd paste, and A paste.
u-Pt paste or the like is used. Then, a silicon carbide (SiC) temperature sensitive resistor film 9 is formed on one surface of the flat alumina substrate 5 by a sputtering method to form a thin film thermistor element.

【0010】このようにして薄膜サーミスタ素子を形成
した後、平板状アルミナ基板5の他の表面で一対の貫通
口6a,6bに形成された導電性部材8a,8bと接触
して一対の接続用導電性ペーストを塗布し、この後、一
対の板状金属リード線10a,10bを接続用導電性ペ
ーストに密着した後、乾燥・焼成して接着性導電性焼結
体11a,11bを形成する。この時点で、薄膜サーミ
スタ素子に一対の板状金属リード線10a,10bが機
械的に弱く結合された中間組立品が形成される。なお、
この接続用導電性ペーストとして、電極薄膜用導電性ペ
ーストと同種のペーストが用いられる。
After the thin film thermistor element is formed in this manner, the flat plate-shaped alumina substrate 5 is contacted with the conductive members 8a and 8b formed on the pair of through holes 6a and 6b on the other surface of the flat plate-shaped alumina substrate 5 to make a pair for connection. The conductive paste is applied, and then the pair of plate-shaped metal lead wires 10a and 10b are adhered to the conductive paste for connection, followed by drying and firing to form the adhesive conductive sintered bodies 11a and 11b. At this point, an intermediate assembly is formed in which the pair of plate-shaped metal leads 10a and 10b are mechanically weakly coupled to the thin film thermistor element. In addition,
As the conductive paste for connection, the same kind of conductive paste as the conductive thin film for electrode thin film is used.

【0011】他方で、アルミナ絶縁性支持体12を準備
し、その一方の表面に焼成硝子膜13を形成する。この
後、板状アルミナ絶縁性支持体12に形成された焼成硝
子膜13の上に前述した中間組立品を積層し、一対の板
状金属リード線10a,10bを含み薄膜サーミスタ素
子の周囲を硝子ペーストで被膜した後、乾燥・焼成して
硝子焼結体14を形成する。硝子焼結体14の厚さは1
〜2mmである。
On the other hand, an alumina insulating support 12 is prepared, and a calcined glass film 13 is formed on one surface thereof. Thereafter, the above-mentioned intermediate assembly is laminated on the calcined glass film 13 formed on the plate-shaped alumina insulating support 12, and a glass is formed around the thin film thermistor element including a pair of plate-shaped metal lead wires 10a and 10b. After coating with a paste, it is dried and fired to form a glass sintered body 14. The thickness of the glass sintered body 14 is 1
~ 2 mm.

【0012】この厚さは、印刷工程・焼成工程を経て形
成される通常の焼成厚膜の厚さの約100倍である。こ
のような厚さの硝子焼結体14をアルミナ絶縁性支持体
12の表面に焼成工程により形成する場合、熔融した硝
子はアルミナ絶縁性支持体12の表面上で濡れにくいの
で、球状になり易い。この傾向は、熔融硝子の中に硝子
と濡れ易い金属が配置された場合、特に顕著である。こ
の結果、アルミナ絶縁性支持体12と硝子焼結体14の
接着面積が低下し易い。この点を考慮して、本発明の接
触型薄膜サーミスタでは、アルミナ絶縁性支持体12の
表面にあらかじめ焼成硝子膜13が形成されている。熔
融した硝子は焼成硝子膜13上で濡れ易いので、所定の
接着面積が得られる。焼成硝子膜13と硝子焼結体14
の材質は、同じであることが、濡れ性の点でも最も優れ
ている。また、焼成硝子膜13は、アルミナ絶縁性支持
体12の周辺端部15を除いて形成されることが好まし
い。アルミナ絶縁性支持体12の一方の表面の全面にわ
たり焼成硝子膜13が形成された場合、硝子焼結体14
の量が多くなると、硝子焼結体14がアルミナ絶縁性支
持体12から溢れ易い。しかし、焼成硝子膜13がアル
ミナ絶縁性支持体12の周辺端部15を除いて形成され
た場合、上述したように、熔融した硝子は焼成硝子膜1
3上ではよく濡れるが、アルミナ絶縁性支持体12上で
は濡れにくいので、硝子焼結体14がアルミナ絶縁支持
体12から溢れることはないからである。
This thickness is approximately 100 times the thickness of a normal baked thick film formed through the printing process and the baking process. When the glass sintered body 14 having such a thickness is formed on the surface of the alumina insulating support 12 by a firing step, the molten glass is hard to wet on the surface of the alumina insulating support 12, and thus tends to be spherical. .. This tendency is particularly remarkable when a metal that easily wets the glass is placed in the molten glass. As a result, the adhesion area between the alumina insulating support 12 and the glass sintered body 14 is easily reduced. In consideration of this point, in the contact type thin film thermistor of the present invention, the calcined glass film 13 is previously formed on the surface of the alumina insulating support 12. Since the melted glass easily wets on the baked glass film 13, a predetermined adhesion area can be obtained. Firing glass film 13 and sintered glass body 14
The same material has the best wettability. Further, the baked glass film 13 is preferably formed except for the peripheral end portion 15 of the alumina insulating support 12. When the sintered glass film 13 is formed on the entire surface of one surface of the alumina insulating support 12, the glass sintered body 14
The glass sintered body 14 easily overflows from the alumina insulating support 12 when the amount of the glass is increased. However, when the calcined glass film 13 is formed except for the peripheral end portion 15 of the alumina insulating support 12, as described above, the melted glass is the calcined glass film 1
The reason is that the glass sintered body 14 does not overflow from the alumina insulating support 12 because it wets well on the alumina insulating support 12 but is hard to wet on the alumina insulating support 12.

【0013】なお、一対の板状金属リード線10a,1
0bとして、幅1.2mm、厚さ0.3mm程度のFe−C
r系合金板が用いられる。この合金は耐熱性に優れるの
みならず、アルミナ基板5と同程度の熱膨張係数を有す
る硝子焼結体14で被覆したときクラックも発生しない
点で優れている。
A pair of plate-shaped metal lead wires 10a, 1
0b is Fe-C with a width of 1.2 mm and a thickness of 0.3 mm.
An r-based alloy plate is used. This alloy is excellent not only in heat resistance but also in that cracks do not occur when it is coated with the glass sintered body 14 having a thermal expansion coefficient similar to that of the alumina substrate 5.

【0014】このようにして構成された本発明の接触型
薄膜サーミスタ構成では、従来例に比べ、樹脂などの有
機物が全く使用されていないので、最高使用温度を20
0℃以上にできる。すなわち、平板状アルミナ基板5、
電極膜7a,7b、導電性部材8a,8b、接着性導電
性焼結体11a,11b、硝子焼結体14などは、すべ
て無機物であり、しかも700℃以上の焼成工程を経て
形成されるので、500℃以上の耐熱性を容易に得られ
る。また、絶縁性支持体12にアルミナ板を使用ている
ので、この耐熱性も問題ない。従って、本発明の薄膜サ
ーミスタの耐熱性は、結局、感温抵抗体膜9の耐熱性に
依存する。この耐熱性は感温抵抗体膜9の材質、形成条
件により決められる。感温抵抗体膜9として、複合金属
酸化物、Ge,Si,SiCなどの蒸着膜、スパッタ
膜、印刷・焼成厚膜など種々あるが、なかでもSiCス
パッタ感温抵抗体膜は500℃の耐熱性を有すると共に
0−500℃の広い温度範囲を検出するのに適した抵抗
温度特性を有する点で優れている。また、対象物の表面
に本発明の接触型薄膜サーミスタを密着させて、90%
熱応答時間を測定した結果、7−8secの高速熱応答
性が得られた。
In the contact type thin film thermistor structure of the present invention thus constructed, no organic substance such as resin is used compared with the conventional example, so that the maximum operating temperature is 20.
It can be above 0 ° C. That is, the flat alumina substrate 5,
Since the electrode films 7a and 7b, the conductive members 8a and 8b, the adhesive conductive sintered bodies 11a and 11b, the glass sintered body 14 and the like are all inorganic substances and are formed through a firing step at 700 ° C. or higher. A heat resistance of 500 ° C. or higher can be easily obtained. Further, since an alumina plate is used as the insulating support 12, there is no problem with this heat resistance. Therefore, the heat resistance of the thin film thermistor of the present invention is ultimately dependent on the heat resistance of the temperature sensitive resistor film 9. This heat resistance is determined by the material of the temperature sensitive resistor film 9 and the forming conditions. As the temperature-sensitive resistor film 9, there are various kinds such as a composite metal oxide, a vapor deposition film of Ge, Si, SiC, etc., a sputtered film, a thick film printed and baked, etc. Among them, the SiC sputtered temperature-sensitive resistor film has a heat resistance of 500 ° C. It has excellent resistance and temperature characteristics suitable for detecting a wide temperature range of 0 to 500 ° C. In addition, the contact type thin film thermistor of the present invention is adhered to the surface of the target object,
As a result of measuring the thermal response time, a high-speed thermal response of 7-8 sec was obtained.

【0015】[0015]

【発明の効果】以上述べて来たように、本発明によれば
次に示す効果が得られる。
As described above, according to the present invention, the following effects can be obtained.

【0016】(1)従来の表面温度センサに用いられて
きた樹脂を全く含まず、すべてセラミック、焼結体、な
ど無機物で構成されるので、高耐熱性に優れる。
(1) Since it does not contain the resin used in the conventional surface temperature sensor at all and is made of an inorganic material such as ceramics and sintered bodies, it has excellent high heat resistance.

【0017】(2)アルミナ絶縁性支持体上の表面に焼
成硝子膜が形成されているので、硝子焼結体とアルミナ
絶縁性焼結体の接着を安定できる。
(2) Since the calcined glass film is formed on the surface of the alumina insulating support, the adhesion between the glass sintered body and the alumina insulating sintered body can be stabilized.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例における接触型薄膜サーミス
タの断面図である。
FIG. 1 is a cross-sectional view of a contact type thin film thermistor according to an embodiment of the present invention.

【図2】従来の表面温度センサを示す断面図である。FIG. 2 is a cross-sectional view showing a conventional surface temperature sensor.

【符号の説明】[Explanation of symbols]

6a,6b 貫通口 7a,7b 厚膜電極膜 8a,8b 導電性部材 10a,10b 一対の板状金属リード線 11a,11b 接着性導電性焼結体 12 絶縁性支持体 13 焼成硝子膜 14 硝子焼結体 6a, 6b Through hole 7a, 7b Thick film electrode film 8a, 8b Conductive member 10a, 10b A pair of plate-shaped metal lead wires 11a, 11b Adhesive conductive sintered body 12 Insulating support 13 Firing glass film 14 Vitreous firing Union

───────────────────────────────────────────────────── フロントページの続き (72)発明者 黄地 謙三 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kenzo Ochi 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】薄膜サーミスタ素子と一対の板状金属リー
ド線と平板状絶縁性支持体から構成され、前記薄膜サー
ミスタ素子は平板状アルミナ基板と、前記平板状アルミ
ナ基板に設けられた一対の貫通口と、前記平板状アルミ
ナ基板の一方の表面から他の表面にわたり電気的に導通
して、前記貫通口を貫通して配置された一対の導電性部
材と、前記平板状アミルナ基板の前記一方の表面に前記
貫通口を含んで配置された一対の電極膜と、前記一対の
電極膜に積層して配置された感温抵抗体膜とから構成さ
れ、前記一対の板状金属リード線は前記薄膜サーミスタ
素子の前記平板状アルミナ基板の前記他の表面で前記一
対の貫通口と対向するように配置され、前記一対の導電
性部材と前記一対の板状金属リード線がそれぞれ接着性
導電性焼結体で接続され、前記平板状絶縁性支持体は一
方の表面に硝子膜が形成され、前記一対の板状金属リー
ド線の接続された前記薄膜サーミスタ素子を前記絶縁性
支持体の前記一方の表面に配置し、前記一対の板状金属
リード線を含み前記薄膜サーミスタ素子の周囲を硝子焼
結体で被覆した接触型薄膜サーミスタ。
1. A thin film thermistor element, a pair of plate-shaped metal lead wires, and a plate-shaped insulating support, wherein the thin-film thermistor element is a plate-shaped alumina substrate and a pair of penetrating holes provided on the plate-shaped alumina substrate. Mouth, a pair of conductive members electrically conducted from one surface of the flat plate-shaped alumina substrate to the other surface, and arranged through the through-hole, and the one of the flat plate-shaped amyluna substrate. The pair of electrode films arranged on the surface including the through-hole, and the temperature-sensitive resistor film laminated on the pair of electrode films, and the pair of plate-shaped metal lead wires are the thin film. The thermistor element is arranged so as to face the pair of through holes on the other surface of the plate-shaped alumina substrate, and the pair of conductive members and the pair of plate-shaped metal lead wires are respectively adhesive conductive sintered. Contact with the body A glass film is formed on one surface of the flat insulating support, and the thin film thermistor element to which the pair of flat metal lead wires are connected is arranged on the one surface of the insulating support. A contact-type thin film thermistor including the pair of plate-shaped metal lead wires and the thin film thermistor element having a periphery covered with a glass sintered body.
【請求項2】平板状絶縁性支持体の一方の表面の外周部
は非硝子膜としてなる請求項1記載の接触型薄膜サーミ
スタ。
2. The contact type thin film thermistor according to claim 1, wherein the outer peripheral portion of one surface of the flat insulating support is a non-glass film.
【請求項3】平板状絶縁性支持体の一方の表面に形成さ
れた硝子膜と硝子焼結体は同じ材質である請求項1記載
の接触型薄膜サーミスタ。
3. The contact type thin film thermistor according to claim 1, wherein the glass film and the glass sintered body formed on one surface of the flat insulating support are made of the same material.
JP29410491A 1991-11-11 1991-11-11 Contact type thin film thermistor Expired - Lifetime JP2734840B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29410491A JP2734840B2 (en) 1991-11-11 1991-11-11 Contact type thin film thermistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29410491A JP2734840B2 (en) 1991-11-11 1991-11-11 Contact type thin film thermistor

Publications (2)

Publication Number Publication Date
JPH05135909A true JPH05135909A (en) 1993-06-01
JP2734840B2 JP2734840B2 (en) 1998-04-02

Family

ID=17803341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29410491A Expired - Lifetime JP2734840B2 (en) 1991-11-11 1991-11-11 Contact type thin film thermistor

Country Status (1)

Country Link
JP (1) JP2734840B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111801486B (en) * 2018-01-18 2024-07-12 音-斯图公司 Quick response temperature sensor

Also Published As

Publication number Publication date
JP2734840B2 (en) 1998-04-02

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