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JPH0513397A - Cleaning device - Google Patents

Cleaning device

Info

Publication number
JPH0513397A
JPH0513397A JP16562091A JP16562091A JPH0513397A JP H0513397 A JPH0513397 A JP H0513397A JP 16562091 A JP16562091 A JP 16562091A JP 16562091 A JP16562091 A JP 16562091A JP H0513397 A JPH0513397 A JP H0513397A
Authority
JP
Japan
Prior art keywords
cleaning
cleaned
semiconductor wafer
vessel
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16562091A
Other languages
Japanese (ja)
Inventor
Narikazu Suzuki
成和 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP16562091A priority Critical patent/JPH0513397A/en
Publication of JPH0513397A publication Critical patent/JPH0513397A/en
Pending legal-status Critical Current

Links

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

PURPOSE:To provide a cleaning device manufactured so as to be able to clean a tabular material to be cleaned efficiently and reliably. CONSTITUTION:A cleaning device for cleaning a semiconductor wafer U is characterized by that it is provided with a cleaning vessel 1, holding jigs 6 for holding the semiconductor wafer U provided on the inner bottom of this vessel 1 in a standing state, a feed pipe 12 for feeding cleaning water to the interior of the vessel 1, a discharge pipe 13 for discharging the cleaning water and a high-frequency oscillator 16, which is provided at a position, where corresponds to the wafer U, on the sidewall of the vessel 1 and gives ultrasonic vibrations to the wafer U via the cleaning water in the vessel 1.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は板状の被洗浄物の両面
を同時に洗浄するための洗浄装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning device for cleaning both sides of a plate-shaped object to be cleaned at the same time.

【0002】[0002]

【従来の技術】板状の被洗浄物としての半導体ウエハや
液晶ガラス基板などにおいて、その板面に塵埃が付着し
ていると、たとえばリソグラフィ−工程で微細なパタ−
ンを形成することが難しい。そこで、リソグラフィ−工
程などのように清浄な状態が要求される工程で加工を行
う前には、上記半導体ウエハや液晶ガラス基板を洗浄
し、付着した塵埃を確実に除去するようにしている。
2. Description of the Related Art In a semiconductor wafer, a liquid crystal glass substrate or the like as a plate-like object to be cleaned, if dust adheres to the plate surface, for example, a fine pattern is formed in a lithography process.
Difficult to form. Therefore, the semiconductor wafer and the liquid crystal glass substrate are cleaned to reliably remove the attached dust before processing is performed in a process such as a lithography process that requires a clean state.

【0003】このような洗浄を行う洗浄装置として、従
来はフロンなどの溶剤を用いた洗浄が主流であった。し
かしながら、溶剤を用いた洗浄はコスト高となるという
ことがあるばかりか、公害を招く虞があるなどの問題を
有していた。
As a cleaning apparatus for performing such cleaning, cleaning using a solvent such as CFC has been the mainstream conventionally. However, cleaning with a solvent not only increases the cost, but also poses a problem of causing pollution.

【0004】溶剤を用いない洗浄装置としては、被洗浄
物に純水をスプレ−して洗浄するという方法がある。し
かしながら、純水のスプレ−だけで洗浄すると、被洗浄
物が清浄な状態となるまでにスプレ−しなければならな
い純水の使用量が非常に多くなるから、この場合もコス
ト高を招くことになるばかりか、洗浄時間を長く掛けな
ければ、被洗浄物を清浄にできないということもある。
As a cleaning device which does not use a solvent, there is a method of spraying pure water on an object to be cleaned. However, if the pure water spray is used alone, the amount of pure water that must be sprayed before the object to be cleaned becomes very large. Not only that, but it may not be possible to clean the object to be cleaned unless the cleaning time is extended.

【0005】さらに、従来の装置は多数枚の被洗浄物を
一度に洗浄する、いわゆるバッチ方式が採用されてい
た。多数枚の被洗浄物を上述したように溶剤や純水のス
プレ−だけで洗浄すると、一回当たりの洗浄時間がかな
り長くなり、その前後の工程との時間差が大きくなる。
そのため、洗浄工程を含む一連の工程を連続的に行うこ
とができなくなるということもある。
Further, the conventional apparatus employs a so-called batch system in which a large number of objects to be cleaned are cleaned at one time. If a large number of objects to be cleaned are cleaned only by spraying with a solvent or pure water as described above, the cleaning time per cleaning becomes considerably long and the time difference between the preceding and subsequent steps becomes large.
Therefore, it may not be possible to continuously perform a series of steps including a cleaning step.

【0006】[0006]

【発明が解決しようとする課題】このように、従来は溶
剤を用いたり、純水のスプレ−だけで洗浄し、しかもバ
ッチ方式が採られていたので、コスト高を招いたり、洗
浄に時間が掛かるなどのことがあった。
As described above, conventionally, a solvent is used, or cleaning is performed only by spraying pure water, and a batch method is adopted. Therefore, the cost is increased and the cleaning time is long. There were things such as hanging.

【0007】この発明は上記事情にもとづきなされたも
ので、その目的とするところは、溶剤を用いたり、純水
を多量に用いることなく、短時間で被洗浄物を洗浄する
ことができるようにした洗浄装置を提供することにあ
る。
The present invention has been made in view of the above circumstances. An object of the present invention is to enable cleaning of an object to be cleaned in a short time without using a solvent or a large amount of pure water. To provide the cleaning device.

【0008】[0008]

【課題を解決するための手段】上記課題を解決するため
にこの発明は、被洗浄物を洗浄する洗浄装置において、
洗浄容器と、この洗浄容器の内底部に設けられ板状の被
洗浄物を立位状態で保持する保持手段と、上記洗浄容器
内に洗浄水を上記被洗浄物の洗浄面に沿う方向に供給す
る供給手段および洗浄水を排出する排出手段と、上記洗
浄容器の側壁に上記被洗浄物と対応して上下方向に沿っ
て設けられ洗浄容器内の洗浄水を介して上記被洗浄物に
超音波振動を与える高周波発振器とを具備したことを特
徴とする。
In order to solve the above problems, the present invention provides a cleaning device for cleaning an object to be cleaned,
A cleaning container, a holding means provided at an inner bottom portion of the cleaning container for holding a plate-shaped object to be cleaned in an upright position, and cleaning water is supplied into the cleaning container in a direction along a cleaning surface of the object to be cleaned. And a discharge means for discharging the cleaning water, and ultrasonic waves to the object to be cleaned through the cleaning water in the cleaning container provided on the side wall of the cleaning container along the vertical direction corresponding to the object to be cleaned. And a high frequency oscillator for giving vibration.

【0009】[0009]

【作用】上記構成によれば、高周波発振器で発生する超
音波振動を被洗浄物に確実に与えることができるため、
その被洗浄物の洗浄を効率よく確実に行うことができ
る。
According to the above structure, the ultrasonic vibration generated by the high frequency oscillator can be reliably applied to the object to be cleaned.
The object to be cleaned can be efficiently and reliably cleaned.

【0010】[0010]

【実施例】以下、この発明の一実施例を図面を参照して
説明する。図1に示す洗浄装置は上面が開口した箱型の
洗浄容器1を備えている。この洗浄容器1の内部は、図
2に示すように中央仕切壁2と一対の側部仕切壁3とに
よって一対の洗浄室4およびこれらの両側に位置する一
対のオ−バフロ−室5とに区画されている。上記側部仕
切壁3は洗浄容器1の高さ寸法よりもわずかに低くなっ
ている。そのため、後述するごとく洗浄室4に供給され
た純水からなる洗浄水は、洗浄室4からオ−バフロ−室
5へオ−バフロ−する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. The cleaning apparatus shown in FIG. 1 includes a box-shaped cleaning container 1 having an open top surface. As shown in FIG. 2, the inside of the cleaning container 1 is divided into a pair of cleaning chambers 4 and a pair of overflow chambers 5 located on both sides thereof by a central partition wall 2 and a pair of side partition walls 3. It is partitioned. The side partition wall 3 is slightly lower than the height dimension of the cleaning container 1. Therefore, as will be described later, the cleaning water made of pure water supplied to the cleaning chamber 4 overflows from the cleaning chamber 4 to the overflow chamber 5.

【0011】各洗浄室4の内底部には一対の保持具6が
長手方向に離間して設けられている。これら保持具6の
上面は円弧面7に形成され、各円弧面7には洗浄室4の
長手方向に沿うスリット7bがそれぞれ対応して形成さ
れている。そして、一対の保持具6には、板状の被洗浄
物としての1枚の半導体ウエハUがその周縁部を上記ス
リット7bに着脱自在に係合させることで立位状態に保
持されている。
A pair of holders 6 are provided at the inner bottom of each cleaning chamber 4 so as to be separated from each other in the longitudinal direction. The upper surfaces of the holders 6 are formed into arcuate surfaces 7, and the arcuate surfaces 7 are respectively formed with slits 7b along the longitudinal direction of the cleaning chamber 4. Then, in the pair of holders 6, one semiconductor wafer U as a plate-like object to be cleaned is held in an upright position by detachably engaging the peripheral edge of the semiconductor wafer U with the slit 7b.

【0012】各洗浄室4の長手方向一端側に位置する一
方の側壁1aの上部にはそれぞれ2本のシャワ−管8が
接続されている。各シャワ−管8の一端側は洗浄室4の
上部に延出され、他端側は図示しない純水の供給源に第
1の電磁弁9を介して接続される。上記シャワ−管8の
一端側には図1に示すように多数の噴出口11が斜め下
方に向かって穿設されている。したがって、一対のシャ
ワ−管8からは、上記保持具6に保持された半導体ウエ
ハ6の両側面に向かって純水が吹き付けられるようにな
っている。
Two shower tubes 8 are connected to the upper portion of one side wall 1a located at one longitudinal end of each cleaning chamber 4, respectively. One end side of each shower tube 8 extends to the upper part of the cleaning chamber 4, and the other end side is connected to a pure water supply source (not shown) via a first solenoid valve 9. As shown in FIG. 1, a large number of jet ports 11 are formed obliquely downward at one end of the shower pipe 8. Therefore, pure water is sprayed from the pair of shower tubes 8 toward both side surfaces of the semiconductor wafer 6 held by the holder 6.

【0013】上記一方の側壁1aの下部には、各洗浄室
4に連通する一対の供給管12と一対の排出管13とが
それぞれ接続されている。供給管12は図示しない純水
の供給源に第2の電磁弁14を介して接続され、純水を
半導体ウエハUの主面(被洗浄面)に沿う方向に供給す
るように設けられている。他方、排出管13にはクイッ
クダンプ用の電磁式の排出弁15を介して図示しない排
水路に連通している。この排出弁15は洗浄室4内に貯
えられた洗浄水を短時間、たとえば2〜3秒で排出する
ことができるようになっている。
A pair of supply pipes 12 and a pair of discharge pipes 13 communicating with each cleaning chamber 4 are connected to the lower portion of the one side wall 1a. The supply pipe 12 is connected to a pure water supply source (not shown) via a second electromagnetic valve 14, and is provided so as to supply pure water in a direction along the main surface (cleaning surface) of the semiconductor wafer U. .. On the other hand, the discharge pipe 13 communicates with a drainage channel (not shown) via an electromagnetic discharge valve 15 for quick dump. The discharge valve 15 can discharge the cleaning water stored in the cleaning chamber 4 in a short time, for example, in 2 to 3 seconds.

【0014】さらに、上記洗浄容器1の一方の側壁1a
と他方の側壁1bとの各洗浄室4の長手方向端部に対向
する部位には、図1に示すようにそれぞれ超音波振動を
発生する高周波発振器16が設けられている。つまり、
高周波発振器16は、超音波振動の発振部17を洗浄室
4の上下方向に沿わせているとともに、発振部17の幅
方向中央部分を洗浄室4に保持された半導体ウエハUに
対応させている。それによって、発振部17から洗浄室
4に向けて発振される超音波領域に上記半導体ウエハU
が位置するようになっている。なお、高周波発生器16
は、一方の側壁1aには1つ、他方の側壁1bには上下
方向に2つ設けられている。
Further, one side wall 1a of the cleaning container 1
As shown in FIG. 1, high-frequency oscillators 16 that generate ultrasonic vibrations are provided at portions of the other side wall 1b that face the longitudinal ends of the cleaning chambers 4, respectively. That is,
The high-frequency oscillator 16 has an ultrasonic vibration oscillating portion 17 along the vertical direction of the cleaning chamber 4, and a central portion in the width direction of the oscillating portion 17 corresponding to the semiconductor wafer U held in the cleaning chamber 4. .. As a result, the semiconductor wafer U is placed in the ultrasonic region oscillated from the oscillator 17 toward the cleaning chamber 4.
Is located. The high frequency generator 16
Are provided on one side wall 1a and two on the other side wall 1b in the vertical direction.

【0015】上記一方の側壁1aのオ−バフロ−室5と
対応する部分の下部にはオ−バフロ−管18が接続され
ている。このオ−バフロ−管18の一端側は上記オ−バ
フロ−室5の全長にわたって延出され、他端は図示しな
い排水路に連通している。
An overflow pipe 18 is connected to the lower portion of the one side wall 1a corresponding to the overflow chamber 5. One end of the overflow pipe 18 extends over the entire length of the overflow chamber 5, and the other end communicates with a drainage channel (not shown).

【0016】上記オ−バフロ−管18の一端側には図2
に示すように一対の排出口19が穿設されている。した
がって、洗浄室4からオ−バフロ−室5へオ−バフロ−
した洗浄水はオ−バフロ−管18の排出口19から排出
されるようになっている。
As shown in FIG. 2 at one end of the overflow pipe 18,
A pair of discharge ports 19 are provided as shown in FIG. Therefore, from the cleaning chamber 4 to the overflow chamber 5,
The washed water is discharged from the discharge port 19 of the overflow pipe 18.

【0017】なお、上記第1の電磁弁9、第2の電磁弁
14、排水弁15および高周波発振器16は制御装置2
1からの制御信号によって後述するごとく駆動制御され
るようになっている。
The first solenoid valve 9, the second solenoid valve 14, the drain valve 15 and the high frequency oscillator 16 are provided in the control unit 2.
The drive signal is controlled by the control signal from 1 as described later.

【0018】つぎに、上記構成の洗浄装置によって半導
体ウエハUを洗浄する動作を説明する。まず、各洗浄室
4にハンドリングロボットなどによって半導体ウエハU
を供給し、保持具6によって立位状態で保持したなら
ば、制御装置21からの信号によって第2の電磁弁14
が開放されるとともに、高周波発振器16が駆動され
る。
Next, the operation of cleaning the semiconductor wafer U by the cleaning apparatus having the above structure will be described. First, a semiconductor wafer U is provided in each cleaning chamber 4 by a handling robot or the like.
Is supplied and held by the holder 6 in an upright state, a signal from the control device 21 causes the second solenoid valve 14
And the high frequency oscillator 16 is driven.

【0019】上記第2の電磁弁14が開放されること
で、洗浄水が各洗浄室4に供給される。また高周波発振
器16が作動することで、その発振部17から発振され
た超音波振動が洗浄水を伝播して半導体ウエハUの両側
面に作用する。上記発振部17は半導体ウエハUの立位
方向に沿う上下方向に沿って設けられている。そのた
め、超音波振動は半導体ウエハUの両側面全体にわたっ
てに有効に作用するから、その半導体ウエハUに付着し
ている塵埃を確実かつ迅速に除去することができる。
When the second solenoid valve 14 is opened, cleaning water is supplied to each cleaning chamber 4. Further, when the high frequency oscillator 16 operates, the ultrasonic vibrations oscillated from the oscillating portion 17 propagate in the cleaning water and act on both side surfaces of the semiconductor wafer U. The oscillating portion 17 is provided along the vertical direction along the upright direction of the semiconductor wafer U. Therefore, since the ultrasonic vibrations effectively act on the entire side surfaces of the semiconductor wafer U, the dust adhering to the semiconductor wafer U can be reliably and quickly removed.

【0020】上記半導体ウエハUから除去された塵埃は
オ−バフロ−室5へオ−バフロ−する洗浄水とともに流
れてオ−バフロ−管18から排出される。このような洗
浄が所定時間継続されると、第2の電磁弁14が閉じら
れ、排水弁15が開放される。それによって、洗浄室4
内の洗浄水は排出管13を通って一気に排出されるか
ら、オ−バフロ−室5へ流れずに洗浄室4に沈んだ塵埃
も、一緒に排出されることになる。
The dust removed from the semiconductor wafer U flows into the overflow chamber 5 together with the overflowing cleaning water and is discharged from the overflow pipe 18. When such cleaning is continued for a predetermined time, the second electromagnetic valve 14 is closed and the drain valve 15 is opened. Thereby, the washing room 4
Since the cleaning water in the inside is discharged all at once through the discharge pipe 13, the dust that has settled in the cleaning chamber 4 without flowing into the overflow chamber 5 is also discharged together.

【0021】洗浄水の排出が終了すると、第1の電磁弁
9が開放されてシャワ−管8から半導体ウエハUの両側
面に向けて洗浄水がシャワ−される。そのため、半導体
ウエハUから一度除去された塵埃の一部が排水時に再度
付着しても、このシャワ−洗浄によって除去されること
になる。そして、半導体ウエハUはシャワ−洗浄を受け
ながら洗浄室4から図示しないハンドリングロボットに
よって搬出される。
When the discharge of the cleaning water is completed, the first electromagnetic valve 9 is opened and the cleaning water is showered from the shower tube 8 toward both side surfaces of the semiconductor wafer U. Therefore, even if some of the dust once removed from the semiconductor wafer U adheres again during drainage, it will be removed by this shower cleaning. Then, the semiconductor wafer U is unloaded from the cleaning chamber 4 by a handling robot (not shown) while undergoing shower cleaning.

【0022】このように、1枚の半導体ウエハUを洗浄
室4内に垂直に保持し、その両側面に超音波振動を作用
させて洗浄するようにしたので、洗浄室4を薄型化する
ことができる。つまり、装置全体の小型化が計れる。
As described above, since one semiconductor wafer U is vertically held in the cleaning chamber 4 and both sides thereof are subjected to ultrasonic vibration for cleaning, the cleaning chamber 4 can be made thin. You can That is, the size of the entire device can be reduced.

【0023】また、超音波振動を発生する高周波発振器
16を半導体ウエハUの立位方向である上下方向に沿っ
て設けたから、半導体ウエハUの両側面全体に超音波振
動が有効に伝達される。そのため、上記半導体ウエハU
の洗浄を確実かつ迅速に行うことができる。しかも、1
つの洗浄室4に半導体ウエハ6を1枚だけ保持して洗浄
する、いわゆる枚葉式であるから、そのことによっても
洗浄を確実かつ迅速に行うことができる。
Further, since the high frequency oscillator 16 for generating ultrasonic vibration is provided along the vertical direction which is the upright direction of the semiconductor wafer U, the ultrasonic vibration is effectively transmitted to both side surfaces of the semiconductor wafer U. Therefore, the semiconductor wafer U
Can be surely and quickly washed. Moreover, 1
Since only one semiconductor wafer 6 is held in one cleaning chamber 4 for cleaning, which is a so-called single-wafer type, the cleaning can be surely and swiftly performed.

【0024】洗浄室4からの洗浄水の排出は、クイック
ダンプ式の排水弁15で一気に行われるから、オ−バフ
ロ−室5へ流れずに洗浄室4に残留する塵埃も一緒に排
出され、洗浄室4に残ることがほとんどない。そのた
め、次の洗浄を行うときに、洗浄室4を清掃せずにす
む。しかも、排水時間が短いから、排水工程を迅速に行
える。
Since the cleaning water is discharged from the cleaning chamber 4 at once by the quick dump type drain valve 15, the dust remaining in the cleaning chamber 4 without flowing into the overflow chamber 5 is also discharged. It hardly remains in the washing room 4. Therefore, the cleaning chamber 4 does not have to be cleaned when the next cleaning is performed. Moreover, since the drainage time is short, the drainage process can be performed quickly.

【0025】これらのことにより、1枚の半導体ウエハ
Uを洗浄するのに要する時間を十分に短くすることがで
きるので、洗浄工程を含む一連の工程を連続的に行うこ
とが可能となる。つまり、一連の工程の自動化を実現で
きる。
As a result, the time required for cleaning one semiconductor wafer U can be shortened sufficiently, and a series of steps including the cleaning step can be continuously performed. That is, automation of a series of steps can be realized.

【0026】なお、この発明は上記一実施例に限定され
ず、たとえば洗浄容器に形成される洗浄室の数は2つで
なく、1つあるいは3つ以上であってもよい。また、保
持具は、2枚以上の被洗浄物を保持できる構成であって
もよい。
The present invention is not limited to the above-described embodiment, and the number of cleaning chambers formed in the cleaning container may be one or three or more instead of two. Further, the holder may be configured to be able to hold two or more objects to be cleaned.

【0027】[0027]

【発明の効果】以上述べたようにこの発明は、洗浄容器
内に板状の被洗浄物を立位状態で保持する保持手段を設
けるとともに、上記洗浄容器の側壁に上記被洗浄物と対
応してこの被洗浄物に超音波振動を与える高周波発振器
を上下方向に沿って設けるようにした。
As described above, the present invention is provided with the holding means for holding the plate-like object to be cleaned in the standing state in the cleaning container, and the side wall of the cleaning container corresponds to the object to be cleaned. A high frequency oscillator that applies ultrasonic vibration to the object to be cleaned is provided along the vertical direction.

【0028】そのため、超音波振動を上記被洗浄物の両
側面に確実に与えることができるから、その洗浄を確実
かつ迅速に行うことができる。また、有害な溶剤などを
用いないから、公害を発生する虞がなく、しかも超音波
振動を利用するため、洗浄水だけで洗浄する場合に比べ
てコストの高い純水の使用量を大幅に低減することがで
きるなどの利点を有する。
Therefore, ultrasonic vibrations can be surely applied to both sides of the object to be cleaned, so that the cleaning can be surely and swiftly performed. In addition, since no harmful solvent is used, there is no risk of causing pollution, and because ultrasonic vibration is used, the amount of pure water, which is costly compared to the case of cleaning with only cleaning water, is significantly reduced. It has the advantage that it can be done.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の一実施例の洗浄容器を示す一部断面
した正面図。
FIG. 1 is a partially sectional front view showing a cleaning container according to an embodiment of the present invention.

【図2】同じく平面図。FIG. 2 is a plan view of the same.

【図3】同じく側面図。FIG. 3 is a side view of the same.

【符号の説明】[Explanation of symbols]

1…洗浄容器、6…半導体ウエハ(被洗浄物)、12…
供給管(供給手段)、13…排出管(排出手段)、16
…高周波発振器。
1 ... Cleaning container, 6 ... Semiconductor wafer (object to be cleaned), 12 ...
Supply pipe (supply means), 13 ... Discharge pipe (discharge means), 16
… High frequency oscillator.

Claims (1)

【特許請求の範囲】 【請求項1】 板状の被洗浄物を洗浄する洗浄装置にお
いて、洗浄容器と、 この洗浄容器の内底部に設けられ板状の被洗浄物を立位
状態で保持する保持手段と、上記洗浄容器内に洗浄水を
上記被洗浄物の被洗浄面に沿う方向に供給する供給手段
および洗浄水を排出する排出手段と、上記洗浄容器の側
壁に上記被洗浄物と対応して上下方向に沿って設けられ
洗浄容器内の洗浄水を介して上記被洗浄物に超音波振動
を与える高周波発振器とを具備したことを特徴とする洗
浄装置。
Claim: What is claimed is: 1. A cleaning device for cleaning a plate-shaped object to be cleaned, comprising: a cleaning container; Holding means, a supply means for supplying the cleaning water into the cleaning container in a direction along the surface to be cleaned of the object to be cleaned, and a discharging means for discharging the cleaning water; And a high-frequency oscillator that is provided along the up-down direction and applies ultrasonic vibration to the object to be cleaned through the cleaning water in the cleaning container.
JP16562091A 1991-07-05 1991-07-05 Cleaning device Pending JPH0513397A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16562091A JPH0513397A (en) 1991-07-05 1991-07-05 Cleaning device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16562091A JPH0513397A (en) 1991-07-05 1991-07-05 Cleaning device

Publications (1)

Publication Number Publication Date
JPH0513397A true JPH0513397A (en) 1993-01-22

Family

ID=15815826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16562091A Pending JPH0513397A (en) 1991-07-05 1991-07-05 Cleaning device

Country Status (1)

Country Link
JP (1) JPH0513397A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07283298A (en) * 1994-04-01 1995-10-27 Ebara Corp Manufacture of treatment object
US5849104A (en) * 1996-09-19 1998-12-15 Yieldup International Method and apparatus for cleaning wafers using multiple tanks
KR100242942B1 (en) * 1997-01-14 2000-02-01 윤종용 Washing apparatus for using a multi-oscillation ultrasonic wave
US6047717A (en) * 1998-04-29 2000-04-11 Scd Mountain View, Inc. Mandrel device and method for hard disks
JP2001060573A (en) * 1999-04-27 2001-03-06 Applied Materials Inc Semiconductor substrate cleaning system
US6328809B1 (en) 1998-10-09 2001-12-11 Scp Global Technologies, Inc. Vapor drying system and method
US7373941B2 (en) * 2003-03-28 2008-05-20 Taiwan Semiconductor Manufacturing Co. Ltd Wet cleaning cavitation system and method to remove particulate wafer contamination

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07283298A (en) * 1994-04-01 1995-10-27 Ebara Corp Manufacture of treatment object
US5988189A (en) * 1994-11-14 1999-11-23 Yieldup International Method and apparatus for cleaning wafers using multiple tanks
US5849104A (en) * 1996-09-19 1998-12-15 Yieldup International Method and apparatus for cleaning wafers using multiple tanks
KR100242942B1 (en) * 1997-01-14 2000-02-01 윤종용 Washing apparatus for using a multi-oscillation ultrasonic wave
US6047717A (en) * 1998-04-29 2000-04-11 Scd Mountain View, Inc. Mandrel device and method for hard disks
US6328809B1 (en) 1998-10-09 2001-12-11 Scp Global Technologies, Inc. Vapor drying system and method
JP2001060573A (en) * 1999-04-27 2001-03-06 Applied Materials Inc Semiconductor substrate cleaning system
JP2010010718A (en) * 1999-04-27 2010-01-14 Applied Materials Inc Semiconductor substrate cleaning system
US7373941B2 (en) * 2003-03-28 2008-05-20 Taiwan Semiconductor Manufacturing Co. Ltd Wet cleaning cavitation system and method to remove particulate wafer contamination

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