JPH05121477A - Ball-system wire bonding method - Google Patents
Ball-system wire bonding methodInfo
- Publication number
- JPH05121477A JPH05121477A JP27956191A JP27956191A JPH05121477A JP H05121477 A JPH05121477 A JP H05121477A JP 27956191 A JP27956191 A JP 27956191A JP 27956191 A JP27956191 A JP 27956191A JP H05121477 A JPH05121477 A JP H05121477A
- Authority
- JP
- Japan
- Prior art keywords
- capillary tool
- ball
- metal wire
- bonding
- ball portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 238000005304 joining Methods 0.000 claims description 11
- 238000005520 cutting process Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 23
- 238000010586 diagram Methods 0.000 description 10
- 238000003825 pressing Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、電子部品の製造に際し
て、例えば、半導体チップとリード端子とを、金線等の
金属線を接続するようにしたボール式のワイヤーボンデ
ィング方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ball-type wire bonding method for connecting a semiconductor chip and a lead terminal to a metal wire such as a gold wire when manufacturing an electronic component.
【０００２】[0002]
【従来の技術】一般に、従来におけるボール式のワイヤ
ーボンディング方法は、良く知られているように、 ．先づ、図６に示すように、キャピラリーツール１内
に挿通した金属線２の下端におけるボール部２ａを、前
記キャピラリーツール１の下降動にて、図７に示すよう
に、第１の接合箇所であるところの半導体チップ３に対
して押圧することによって、当該ボール部２ａを半導体
チップ３に接合する。 ．次に、前記キャピラリーツール１を、一旦、適宜高
さだけ上昇動したのち、第２の接合箇所であるところの
リード端子４の上方まで水平移動し、図８に示すよう
に、リード端子４に向かって下降動することにより、金
属線２の他端部を、リード端子４に対して接合する。 ．次いで、前記キャピラリーツール１を、一旦、適宜
高さだけ上昇動し、この上昇動の途中で、キャピラリー
ツール１内に挿通した金属線２を、当該キャピラリーツ
ール１に設けられているクランプ機構（図示せず）にて
クランプし、この状態でキャピラリーツール１を更に上
昇動することにより、図９に示すように、金属線２を切
断する。 ．そして、前記キャピラリーツール１とリード端子４
との間に、図１０に示すように、スパークトーチ体５を
挿入して、このスパークトーチ体５と、前記金属線２の
下端との間にスパーク放電を行って、前記金属線２の下
端を加熱することにより、当該金属線２の下端にボール
部２ａを形成し、然るのち、前記キャピラリーツール１
を、第１の接合箇所であるところの半導体チップ３の上
方の部位まで戻し移動する。 と言う順序で行うようにしている。2. Description of the Related Art Generally, as is well known, the conventional ball-type wire bonding method is as follows. First, as shown in FIG. 6, the ball portion 2a at the lower end of the metal wire 2 inserted in the capillary tool 1 is moved downward by the capillary tool 1 to move it to the first joining point as shown in FIG. The ball portion 2a is bonded to the semiconductor chip 3 by pressing it against the semiconductor chip 3. ． Next, the capillary tool 1 is temporarily moved up by an appropriate height, and then horizontally moved to a position above the lead terminal 4 which is the second joining position, and then, as shown in FIG. By moving downward, the other end of the metal wire 2 is joined to the lead terminal 4. ． Next, the capillary tool 1 is temporarily moved up by an appropriate height, and the metal wire 2 inserted in the capillary tool 1 is clamped in the capillary tool 1 (Fig. (Not shown), and the capillary tool 1 is further moved upward in this state to cut the metal wire 2 as shown in FIG. ． Then, the capillary tool 1 and the lead terminal 4
As shown in FIG. 10, a spark torch body 5 is inserted between the metal wire 2 and the metal wire 2, and a spark discharge is performed between the spark torch body 5 and the lower end of the metal wire 2 to form a lower end of the metal wire 2. The ball portion 2a is formed at the lower end of the metal wire 2 by heating the metal wire 2, and then the capillary tool 1
Is moved back to the portion above the semiconductor chip 3 which is the first bonding portion. I try to do it in that order.
【０００３】[0003]
【発明が解決しようとする課題】しかし、この従来にお
けるボール式ワイヤーボンディング方法は、前記したよ
うに、第２の接合箇所であるところのリード端子４の上
方の部位において、金属線２の下端にボール部２ａをス
パーク放電等の加熱によって形成したのち、このボール
部２ａを、第１の接合箇所であるところの半導体チップ
３の上方の部位まで戻し移動するように構成しているこ
とにより、ボール部２ａを形成する第２の接合箇所か
ら、当該ボール部２ａの接合を行う第１の接合箇所まで
戻し移動するまでの間において、前記スパーク放電等の
加熱によって形成したボール部２ａが冷めて硬くなるか
ら、半導体チップ３に対する接合強度が低下すると共
に、その接合強度にバラ付きが発生することになる。However, according to this conventional ball-type wire bonding method, as described above, at the lower end of the metal wire 2 at the portion above the lead terminal 4 which is the second joining portion. After the ball portion 2a is formed by heating by spark discharge or the like, the ball portion 2a is configured to be moved back to the portion above the semiconductor chip 3 which is the first bonding portion. The ball portion 2a formed by the heating such as the spark discharge is cooled and hard in the period from the second joining portion forming the portion 2a to the first joining portion for joining the ball portion 2a until it is moved back. Therefore, the joint strength with respect to the semiconductor chip 3 is reduced and the joint strength varies.
【０００４】そこで、従来は、前記ボール部２ａの半導
体チップ３に対する押圧力を増大することによって、所
定の接合強度を得るようにしているが、ボール部２ａの
押圧力を増大すると、半導体チップ３における電極部
（前記ボール部を接合するパッド）の部分、更には、半
導体チップ３に欠け又は割れが発生すると言う問題があ
った。Therefore, conventionally, a predetermined bonding strength is obtained by increasing the pressing force of the ball portion 2a against the semiconductor chip 3, but if the pressing force of the ball portion 2a is increased, the semiconductor chip 3 is increased. There is a problem in that a chip or a crack is generated in the electrode portion (the pad that joins the ball portion) and the semiconductor chip 3.
【０００５】しかも、前記従来のボール式ワイヤーボン
ディング方法は、第２の接合箇所であるリード端子４の
上方の部位においてボール部２ａを形成したときをもっ
て、ワイヤーボンディング作業を終わるようにしている
から、次に、ワイヤーボンディングを開始するときにお
いて、停止中に前記ボール部２ａの表面に異物等が付着
する等することにより、第１の接合箇所に対する接合不
良が多発すると言う問題もあった。Moreover, in the conventional ball-type wire bonding method, the wire bonding work is completed when the ball portion 2a is formed at a portion above the lead terminal 4 which is the second bonding portion. Next, when starting the wire bonding, there is a problem that a foreign matter or the like adheres to the surface of the ball portion 2a while the wire bonding is stopped, so that defective bonding frequently occurs at the first bonded portion.
【０００６】本発明は、これらの問題を招来することな
く、ボール部の半導体チップ等に第１の接合箇所に対す
る接合強度を確実に向上できるようにしたボール式ワイ
ヤーボンディング方法を提供することを技術的課題とす
るものである。The present invention is to provide a ball-type wire bonding method capable of surely improving the bonding strength of a semiconductor chip or the like of a ball portion to a first bonding portion without causing these problems. It is a specific subject.
【０００７】[0007]
【課題を解決するための手段】この技術的課題を達成す
るため本発明は、キャピラリーツール内に挿通した金属
線の下端におけるボール部を、前記キャピラリーツール
の下降動によって第１の接合箇所に接合し、次いで、前
記キャピラリーツールを第２の接合箇所まで移動して、
前記金属線の他端を第２の接合箇所に接合し、そして、
前記キャピラリーツールを、前記金属線を切断しながら
前記第１の接合箇所の上方まで戻し移動するようにした
ボール式ワイヤーボンディング方法において、前記キャ
ピラリーツールを、前記第１の接合箇所に向かって下降
動する直前の時期に、当該キャピラリーツール内に挿通
した金属線の下端に前記ボール部を形成することにし
た。In order to achieve this technical object, the present invention joins the ball portion at the lower end of the metal wire inserted in the capillary tool to the first joining portion by the downward movement of the capillary tool. Then move the capillary tool to the second joint,
Join the other end of the metal wire to a second joint, and
In a ball-type wire bonding method in which the capillary tool is moved back to above the first joint while cutting the metal wire, the capillary tool is moved downward toward the first joint. Immediately before this, the ball portion is formed at the lower end of the metal wire inserted in the capillary tool.
【０００８】[0008]
【作 用】このように、キャピラリーツール内に挿通
した金属線の下端にボール部を形成することを、前記キ
ャピラリーツールを、第１の接合箇所に向かって下降動
する直前の時期において行うようにしたことにより、前
記ボール部を、当該ボール部が冷めないうちに第１の接
合箇所に押圧することができて、第１の接合箇所に対す
るボール部の接合強度を確実に向上することができるか
ら、前記従来のように、当該ボール部の押圧力を増大す
ることを必要としないのである。[Operation] As described above, the ball portion is formed at the lower end of the metal wire inserted into the capillary tool at a time immediately before the capillary tool descends toward the first joint portion. By doing so, the ball portion can be pressed against the first joint portion before the ball portion cools, and the joint strength of the ball portion to the first joint portion can be reliably improved. As in the conventional case, it is not necessary to increase the pressing force of the ball portion.
【０００９】一方、キャピラリーツール内に挿通した金
属線の下端にボール部を形成することを、前記キャピラ
リーツールを、第１の接合箇所に向かって下降動する直
前の時期において行うようにしたことにより、ワイヤー
ボンディング作業は、前記ボール部を形成することから
開始し、前記ボール部の表面に異物等が付着することは
全くないから、前記ボール部の第１の接合箇所に対する
接合を、ワイヤーボンディング作業の開始から確実に行
うことができるのである。On the other hand, by forming the ball portion at the lower end of the metal wire inserted into the capillary tool at a time immediately before the capillary tool descends toward the first joining portion, The wire bonding work starts from the formation of the ball portion, and no foreign matter or the like adheres to the surface of the ball portion at all. Can be surely done from the start of.
【００１０】[0010]
【発明の効果】従って、本発明によると、ボール式のワ
イヤーボンディングにおいて、そのボール部を第１の接
合箇所に対して接合するに際して、半導体チップ等の第
１の接合箇所に損傷を及ぼすこと、及びワイヤーボンデ
ィングの開始の時期においてワイヤーボンディングにミ
スが発生することを大幅に低減できる効果を有する。Therefore, according to the present invention, in ball type wire bonding, when the ball portion is bonded to the first bonding portion, the first bonding portion such as a semiconductor chip is damaged. Also, it is possible to significantly reduce the occurrence of mistakes in wire bonding at the start of wire bonding.
【００１１】[0011]
【実施例】以下、本発明の実施例を図面について説明す
る。本発明の実施例によるワイヤーボンディングは、 ．先づ、図１に示すように、キャピラリーツール１内
に挿通した金属線２の下端におけるボール部２ａを、前
記キャピラリーツール１の下降動にて、図２に示すよう
に、第１の接合箇所であるところの半導体チップ３に対
して押圧することによって、当該ボール部２ａを半導体
チップ３に接合する。 ．次に、前記キャピラリーツール１を、一旦、適宜高
さだけ上昇動したのち、第２の接合箇所であるところの
リード端子４の上方まで水平移動し、図３に示すよう
に、リード端子４に向かって下降動することにより、金
属線２の他端部を、リード端子４に対して接合する。 ．次いで、前記キャピラリーツール１を、一旦、適宜
高さだけ上昇動し、この上昇動の途中で、キャピラリー
ツール１内に挿通した金属線２を、当該キャピラリーツ
ール１に設けられているクランプ機構（図示せず）にて
クランプし、この状態でキャピラリーツール１を更に上
昇動することにより、図４に示すように、金属線２を切
断したのち、前記キャピラリーツール１を、前記半導体
チップ３の上方の部位まで戻し移動する。 ．そして、次に、前記キャピラリーツール１を半導体
チップ３に向かって下降する直前の時期において、図５
に示すように、当該キャピラリーツール１と半導体チッ
プ３との間に、スパークトーチ体５を挿入して、このス
パークトーチ体５と、前記金属線２の下端との間にスパ
ーク放電を行って、前記金属線２の下端を加熱すること
により、当該金属線２の下端にボール部２ａを形成し、
然るのち、前記キャピラリーツール１を、第１の接合箇
所であるところの半導体チップ３に向かって下降動す
る。 と言う順序で行うのである。Embodiments of the present invention will now be described with reference to the drawings. Wire bonding according to embodiments of the present invention includes: First, as shown in FIG. 1, the ball portion 2a at the lower end of the metal wire 2 inserted in the capillary tool 1 is moved downward by the capillary tool 1 as shown in FIG. The ball portion 2a is bonded to the semiconductor chip 3 by pressing it against the semiconductor chip 3. ． Next, the capillary tool 1 is temporarily moved up by an appropriate height, and then horizontally moved to a position above the lead terminal 4 which is the second joining position, and then, as shown in FIG. By moving downward, the other end of the metal wire 2 is joined to the lead terminal 4. ． Next, the capillary tool 1 is once moved up by an appropriate height, and the metal wire 2 inserted into the capillary tool 1 is clamped in the clamp mechanism (see FIG. (Not shown), the capillary tool 1 is further moved upward in this state to cut the metal wire 2 as shown in FIG. 4, and then the capillary tool 1 is placed above the semiconductor chip 3. Move back to the site. ． Then, at a time immediately before the capillary tool 1 is lowered toward the semiconductor chip 3, as shown in FIG.
As shown in FIG. 5, a spark torch body 5 is inserted between the capillary tool 1 and the semiconductor chip 3, and spark discharge is performed between the spark torch body 5 and the lower end of the metal wire 2, By heating the lower end of the metal wire 2, a ball portion 2a is formed at the lower end of the metal wire 2,
After that, the capillary tool 1 is moved down toward the semiconductor chip 3 which is the first bonding portion. This is done in that order.
【００１２】すなわち、キャピラリーツール１内に挿通
した金属線２の下端にボール部２ａを形成することを、
前記キャピラリーツール１を、第１の接合箇所であると
ころの半導体チップ３に向かって下降動する直前の時期
において行うようにしたことにより、前記ボール部２ａ
を、当該ボール部２ａが冷めないうちに半導体チップ３
に押圧することができて、半導体チップ３に対するボー
ル部２ａの接合強度を確実に向上することができるか
ら、前記従来のように、当該ボール部２ａの押圧力を増
大することを必要としないのである。That is, the ball portion 2a is formed at the lower end of the metal wire 2 inserted in the capillary tool 1.
By performing the capillary tool 1 immediately before the downward movement toward the semiconductor chip 3 which is the first bonding portion, the ball portion 2a
The semiconductor chip 3 before the ball portion 2a is cooled.
Since the bonding strength of the ball portion 2a with respect to the semiconductor chip 3 can be reliably improved, it is not necessary to increase the pressing force of the ball portion 2a as in the conventional case. is there.
【００１３】なお、本発明は、前記実施例のように、半
導体チップ３とリード端子４との間に対するワイヤーボ
ンディングに限らず、プリント基板に搭載した半導体チ
ップとプリント基板における各種配線回路との間をワイ
ヤーボンディングするから、或いは、プリント基板にお
ける各種配線回路の相互間をワイヤーボンディングする
ような場合等、その他のワイヤーボンディングに適用で
きることは言うまでもなく、また、ボール部２ａは、ス
パーク放電によって形成することに限らず、火炎による
加熱によって形成するようにしても良いのである。The present invention is not limited to wire bonding between the semiconductor chip 3 and the lead terminal 4 as in the above-described embodiment, but may be performed between the semiconductor chip mounted on the printed circuit board and various wiring circuits on the printed circuit board. Needless to say, the present invention can be applied to other wire bonding, such as when wire bonding is performed, or when various wiring circuits on a printed circuit board are wire bonded to each other, and the ball portion 2a is formed by spark discharge. However, it may be formed by heating with a flame.
【図１】本発明の実施例によるワイヤーボンディング方
法における第１状態を示す図である。FIG. 1 is a diagram showing a first state in a wire bonding method according to an embodiment of the present invention.
【図２】第２状態を示す図である。FIG. 2 is a diagram showing a second state.
【図３】第３状態を示す図である。FIG. 3 is a diagram showing a third state.
【図４】第４状態を示す図である。FIG. 4 is a diagram showing a fourth state.
【図５】第５状態を示す図である。FIG. 5 is a diagram showing a fifth state.
【図６】従来によるワイヤーボンディング方法における
第１状態を示す図である。FIG. 6 is a diagram showing a first state in a conventional wire bonding method.
【図７】第２状態を示す図である。FIG. 7 is a diagram showing a second state.
【図８】第３状態を示す図である。FIG. 8 is a diagram showing a third state.
【図９】第４状態を示す図である。FIG. 9 is a diagram showing a fourth state.
【図１０】第５状態を示す図である。FIG. 10 is a diagram showing a fifth state.
１ キャピラリーツール ２ 金属線 ２ａ ボール部 ３ 半導体チップ ４ リード端子 ５ スパークトーチ体 1 Capillary tool 2 Metal wire 2a Ball part 3 Semiconductor chip 4 Lead terminal 5 Spark torch body
Claims (1)
下端におけるボール部を、前記キャピラリーツールの下
降動によって第１の接合箇所に接合し、次いで、前記キ
ャピラリーツールを第２の接合箇所まで移動して、前記
金属線の他端を第２の接合箇所に接合し、そして、前記
キャピラリーツールを、前記金属線を切断しながら前記
第１の接合箇所の上方まで戻し移動するようにしたボー
ル式ワイヤーボンディング方法において、前記キャピラ
リーツールを、前記第１の接合箇所に向かって下降動す
る直前の時期に、当該キャピラリーツール内に挿通した
金属線の下端に前記ボール部を形成することを特徴とす
るボール式ワイヤーボンディング方法。1. A ball portion at a lower end of a metal wire inserted into a capillary tool is joined to a first joining portion by downward movement of the capillary tool, and then the capillary tool is moved to a second joining portion. And the other end of the metal wire is bonded to a second bonding location, and the capillary tool is moved back to above the first bonding location while cutting the metal wire. In the bonding method, the ball portion is formed at a lower end of a metal wire inserted into the capillary tool immediately before the capillary tool is moved down toward the first bonding portion. Wire bonding method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27956191A JPH05121477A (en) | 1991-10-25 | 1991-10-25 | Ball-system wire bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27956191A JPH05121477A (en) | 1991-10-25 | 1991-10-25 | Ball-system wire bonding method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05121477A true JPH05121477A (en) | 1993-05-18 |
Family
ID=17612693
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27956191A Pending JPH05121477A (en) | 1991-10-25 | 1991-10-25 | Ball-system wire bonding method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05121477A (en) |
-
1991
- 1991-10-25 JP JP27956191A patent/JPH05121477A/en active Pending
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