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JPH05102710A - High frequency transmission circuit - Google Patents

High frequency transmission circuit

Info

Publication number
JPH05102710A
JPH05102710A JP3263479A JP26347991A JPH05102710A JP H05102710 A JPH05102710 A JP H05102710A JP 3263479 A JP3263479 A JP 3263479A JP 26347991 A JP26347991 A JP 26347991A JP H05102710 A JPH05102710 A JP H05102710A
Authority
JP
Japan
Prior art keywords
strip conductor
capacitor
high frequency
conductor
frequency transmission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3263479A
Other languages
Japanese (ja)
Inventor
Yasushi Watanabe
泰 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3263479A priority Critical patent/JPH05102710A/en
Publication of JPH05102710A publication Critical patent/JPH05102710A/en
Pending legal-status Critical Current

Links

Landscapes

  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Waveguides (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

PURPOSE:To easily form a bypass capacitor or a coupling capacitor coping with high density mount. CONSTITUTION:A strip conductor 3 is provided in a dielectric body 2 of a multi-layer board and an interval between ground planes 1a and 1b opposite to the strip conductor 3 is changed and the area of the strip conductor 3 is changed to form a capacitor with a prescribed static capacitance between the strip conductor 3 and the ground planes 1a, 1b. One terminal of the strip conductor 3 is connected to a power line of the high frequency circuit with a throughhole to act the capacitor like a bypass capacitor. Moreover, a surface mount component is connected by the strip conductor 3 and the ground planes 1a, 1b with a throughhole to act the capacitor like a coupling capacitor and other component is mounted between the components on the surface to attain high density mount.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、無線通信機にあって、
多層回路基板を利用した高周波回路に使用する高周波伝
送回路に関する。
BACKGROUND OF THE INVENTION The present invention relates to a wireless communication device,
The present invention relates to a high frequency transmission circuit used for a high frequency circuit using a multilayer circuit board.

【0002】[0002]

【従来の技術】従来、この種の多層回路基板を利用した
高周波伝送回路は、内層の導体部を、表面実装した高周
波部品間の高周波伝送を行う接続線として用いている。
この他にグランドプレーンとして高周波部品間の結合を
遮断するシールドにも用いている。さらに、所定のイン
ピーダンスの同軸線路、所謂、ストリップラインとして
も使用されている。
2. Description of the Related Art Conventionally, a high-frequency transmission circuit using this type of multilayer circuit board uses an inner layer conductor portion as a connection line for performing high-frequency transmission between surface-mounted high-frequency components.
In addition to this, it is also used as a ground plane for a shield that blocks coupling between high-frequency components. Further, it is also used as a coaxial line having a predetermined impedance, a so-called strip line.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、この従
来の高周波伝送回路は、高周波伝送やシールドを行うの
みであり、部品そのものとして、使用してはおらず、近
時の高周波機器の軽薄短小化に伴う高密度実装の要求に
対応できるものではない。このため高周波機器の低価格
化、軽量化小型化にも寄与できないという欠点がある。
However, this conventional high-frequency transmission circuit only performs high-frequency transmission and shielding, and is not used as a component itself. It cannot meet the demand for high-density mounting. For this reason, there is a drawback that it cannot contribute to cost reduction, weight reduction, and size reduction of high-frequency equipment.

【0004】本発明は、このように従来の課題を解決す
るものであり、高密度実装に寄与できる高周波除去用の
バイパスコンデンサ、あるいは高周波伝送用の結合コン
デンサが容易に構成できる優れた高周波伝送回路を提供
することを目的とする。
As described above, the present invention solves the conventional problems and is an excellent high-frequency transmission circuit in which a bypass capacitor for high-frequency removal or a coupling capacitor for high-frequency transmission that can contribute to high-density mounting can be easily constructed. The purpose is to provide.

【0005】[0005]

【課題を解決するための手段】この目的を達成するため
に、本発明の高周波伝送回路は、多層回路基板の内層部
に設けられて高周波回路に接続されるストリップ導体
と、ストリップ導体に対向して多層回路基板に設けられ
て、高周波回路に接続される導体層とを有し、ストリッ
プ導体と導体層との間隔を変化させ、また、ストリップ
導体の面積を変化させて、ストリップ導体と導体層間と
の間が所定の静電容量のコンデイサとして動作すること
を特徴とするものである。
In order to achieve this object, a high frequency transmission circuit of the present invention includes a strip conductor provided in an inner layer portion of a multilayer circuit board and connected to the high frequency circuit, and facing the strip conductor. And a conductor layer connected to the high-frequency circuit, the distance between the strip conductor and the conductor layer is changed, and the area of the strip conductor is changed to change the area between the strip conductor and the conductor layer. Is operated as a capacitor having a predetermined electrostatic capacity.

【0006】[0006]

【作用】したがって、本発明の高周波伝送回路によれ
ば、ストリップ導体と、このストリップ導体に対向する
導体層間を所定の静電容量のコンデンサに構成して、高
周波回路に接続しているため、高密度実装に対応する高
周波除去用のバイパスコンデンサ、あるいは高周波伝送
用の結合コンデンサが容易に構成できる。
Therefore, according to the high frequency transmission circuit of the present invention, since the strip conductor and the conductor layer facing the strip conductor are formed into a capacitor having a predetermined capacitance and are connected to the high frequency circuit, A bypass capacitor for high frequency removal corresponding to the high density mounting or a coupling capacitor for high frequency transmission can be easily configured.

【0007】[0007]

【実施例】以下、本発明の多層基板における高周波伝送
回路の実施例を図面にもとづいて説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a high frequency transmission circuit on a multi-layer substrate according to the present invention will be described below with reference to the drawings.

【0008】図1は本発明の実施例を示すものである。
図1において、1a、1bは多層基板におけるグランド
プレーン、2はグランドプレーン1a、1b間に設けら
れる誘電体、3は誘電体2内に設けられるストリップ導
体である。
FIG. 1 shows an embodiment of the present invention.
In FIG. 1, 1a and 1b are ground planes in the multilayer substrate, 2 is a dielectric provided between the ground planes 1a and 1b, and 3 is a strip conductor provided in the dielectric 2.

【0009】以下、この構成の動作について説明する。
この構成におけるストリップ導体3のインピーダンスZ
0 は近似的に、
The operation of this configuration will be described below.
Impedance Z of the strip conductor 3 in this configuration
0 is approximately

【0010】[0010]

【数1】 [Equation 1]

【0011】で表すことができる。この(数1)から理
解できるように、グランドプレーン1a、1bとストリ
ップ導体3との間隔、すなわち、グランドプレーン1
a、1b間の間隔hを小さくし、ストリップ導体3の幅
wを大きくすれば、ストリップ導体3のインピーダンス
を低くすることができる。
Can be expressed as As can be understood from this (Equation 1), the distance between the ground planes 1a and 1b and the strip conductor 3, that is, the ground plane 1
The impedance of the strip conductor 3 can be lowered by reducing the distance h between a and 1b and increasing the width w of the strip conductor 3.

【0012】図2、図3は、式(1)をマイクロ波シュ
ミレーション(MDS)を用いて解析した結果である。
図2はストリップ導体3の面積(AREA)に対する容
量(0〜100PF)をM1、M2、M3、M4、M5
およびM6として示している。この場合の条件は、周波
数は800〜1000MHzであり、ストリップ導体3
の幅wを1mm、長さを34mmおよび厚さtを0.0
35mmとし、またグランドプレーン1a、1bのそれ
ぞれとストリップ導体3との間隔が0.4mmである。
FIGS. 2 and 3 show the results of analysis of the equation (1) using microwave simulation (MDS).
FIG. 2 shows the capacitance (0 to 100 PF) with respect to the area (AREA) of the strip conductor 3 as M1, M2, M3, M4, and M5.
And M6. The condition in this case is that the frequency is 800 to 1000 MHz, and the strip conductor 3
Has a width w of 1 mm, a length of 34 mm and a thickness t of 0.0
The distance between the ground planes 1a and 1b and the strip conductor 3 is 0.4 mm.

【0013】図3はM1、M2、M3、M4におけるイ
ンピーダンスを示し、この場合、条件を、周波数を90
0MHz、グランドプレーン1a、1bのそれぞれとス
トリップ導体3との間隔が0.4mm、ストリップ導体
3の幅wを1mm、厚さtを0.035mmとしてい
る。
FIG. 3 shows impedances at M1, M2, M3, and M4. In this case, the condition is 90 frequency.
0 MHz, the distance between each of the ground planes 1a and 1b and the strip conductor 3 is 0.4 mm, the width w of the strip conductor 3 is 1 mm, and the thickness t is 0.035 mm.

【0014】この結果からもストリップ導体3をインピ
ーダンスの低い静電容量、すなわち、高周波回路を構成
するコイデンサとして利用できることが実証される。こ
のようにインピーダンスの低い静電容量のコンデンサと
して動作するため、ストリップ導体3に対向するグラン
ドプレーン1a、1bとの間隔を変化させ、また、スト
リップ導体3の面積を変化させて得られる所定の静電容
量を高周波回路を構成する高周波除去用のバイパスコン
デンサ、あるいは高周波伝送用の結合コンデンサとして
使用することができる。
This result also demonstrates that the strip conductor 3 can be used as a capacitance having a low impedance, that is, as a condenser forming a high frequency circuit. Since the capacitor operates as a capacitor having a low impedance as described above, the gap between the strip conductor 3 and the ground planes 1a and 1b facing each other is changed, and the area of the strip conductor 3 is changed to obtain a predetermined static capacitance. The capacitance can be used as a bypass capacitor for high frequency removal forming a high frequency circuit or a coupling capacitor for high frequency transmission.

【0015】この場合のバイパスコンデンサは、多層回
路基板の表層のグランドプレーン1a、1b間の誘電体
2内にストリップ導体3を設け、この一端を図示しない
高周波回路の電源ラインにスルーホールで接続するのみ
でよく、表面実装面積を低下させることがない。
In the bypass capacitor in this case, a strip conductor 3 is provided in the dielectric 2 between the ground planes 1a and 1b on the surface layer of the multilayer circuit board, and one end of this is connected to the power supply line of a high frequency circuit (not shown) by a through hole. The surface mounting area is not reduced.

【0016】また結合コンデンサの場合も、表面実装し
た図示しない部品と誘電体2内に配置したストリップ導
体3およびグランドプレーン1a、1bの一方、あるい
は両方をスルーホールで接続するのみでよく、この場合
も、結合コンデンサを表層部に設ける必要がなくなり高
密度実装が可能になる。したがって、いずれも、高密度
実装が容易にできるようになり、結果的に高周波機器の
低価格化、軽量化小型化に寄与できるものとなる。
Also in the case of a coupling capacitor, it suffices to connect a surface-mounted component (not shown) to one or both of the strip conductor 3 and the ground planes 1a and 1b arranged in the dielectric 2 by through holes. Also, since it is not necessary to provide a coupling capacitor on the surface layer, high density mounting becomes possible. Therefore, in each case, high-density mounting can be easily performed, and as a result, it is possible to contribute to the cost reduction, weight reduction and size reduction of the high frequency device.

【0017】[0017]

【発明の効果】以上の説明から明らかなように、本発明
の高周波伝送回路は、ストリップ導体と、このストリッ
プ導体に対向する導体層間を所定の静電容量のコンデン
サに構成して、高周波回路に接続しているため、高密度
実装に対応する高周波除去用のバイパスコンデンサ、あ
るいは高周波伝送用の結合コンデンサが容易に構成でき
るという効果を有する。
As is apparent from the above description, in the high frequency transmission circuit of the present invention, a strip conductor and a conductor layer facing the strip conductor are formed into a capacitor having a predetermined electrostatic capacitance to form a high frequency circuit. Since they are connected, there is an effect that a bypass capacitor for high frequency removal corresponding to high density mounting or a coupling capacitor for high frequency transmission can be easily configured.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の高周波伝送回路の実施例の構成を示す
断面図
FIG. 1 is a cross-sectional view showing a configuration of an embodiment of a high frequency transmission circuit of the present invention.

【図2】MDSによるストリップ導体の面積の変化に対
する静電容量を示す特性図
FIG. 2 is a characteristic diagram showing capacitance with respect to a change in area of a strip conductor by MDS.

【図3】MDSによるインピーダンスの変化を示すイン
ピーダンス特性図
FIG. 3 is an impedance characteristic diagram showing changes in impedance due to MDS.

【符号の説明】[Explanation of symbols]

1a、1b グランドプレーン 2 誘電体 3 ストリップ導体 1a, 1b Ground plane 2 Dielectric 3 Strip conductor

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】多層回路基板の内層部に設けられて高周波
回路に接続されるストリップ導体と、前記ストリップ導
体に対向して前記多層回路基板に設けられて0高周波回
路に接続される導体層とを有し、前記ストリップ導体と
導体層との間隔を変化させ、また、前記ストリップ導体
の面積を変化させて、前記ストリップ導体と前記導体層
間との間が所定の静電容量のコンデイサとして動作する
ことを特徴とする高周波伝送回路。
1. A strip conductor provided on an inner layer portion of a multilayer circuit board and connected to a high frequency circuit; and a conductor layer provided on the multilayer circuit board facing the strip conductor and connected to a high frequency circuit. By changing the distance between the strip conductor and the conductor layer, and changing the area of the strip conductor so that the space between the strip conductor and the conductor layer operates as a capacitor having a predetermined capacitance. A high-frequency transmission circuit characterized in that
JP3263479A 1991-10-11 1991-10-11 High frequency transmission circuit Pending JPH05102710A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3263479A JPH05102710A (en) 1991-10-11 1991-10-11 High frequency transmission circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3263479A JPH05102710A (en) 1991-10-11 1991-10-11 High frequency transmission circuit

Publications (1)

Publication Number Publication Date
JPH05102710A true JPH05102710A (en) 1993-04-23

Family

ID=17390084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3263479A Pending JPH05102710A (en) 1991-10-11 1991-10-11 High frequency transmission circuit

Country Status (1)

Country Link
JP (1) JPH05102710A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000216503A (en) * 1998-11-20 2000-08-04 Alps Electric Co Ltd High frequency module and manufacture thereof
JP2004013900A (en) * 2002-06-04 2004-01-15 Samsung Electronics Co Ltd Semiconductor memory apparatus having data bus structure for reducing high frequency noise
CN109041559A (en) * 2018-08-10 2018-12-18 深圳市信维通信股份有限公司 Manufacturing method of shielding structure in strip radio frequency transmission line/microstrip radio frequency transmission line

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000216503A (en) * 1998-11-20 2000-08-04 Alps Electric Co Ltd High frequency module and manufacture thereof
JP2004013900A (en) * 2002-06-04 2004-01-15 Samsung Electronics Co Ltd Semiconductor memory apparatus having data bus structure for reducing high frequency noise
CN109041559A (en) * 2018-08-10 2018-12-18 深圳市信维通信股份有限公司 Manufacturing method of shielding structure in strip radio frequency transmission line/microstrip radio frequency transmission line

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