JPH046107B2 - - Google Patents
Info
- Publication number
- JPH046107B2 JPH046107B2 JP62313156A JP31315687A JPH046107B2 JP H046107 B2 JPH046107 B2 JP H046107B2 JP 62313156 A JP62313156 A JP 62313156A JP 31315687 A JP31315687 A JP 31315687A JP H046107 B2 JPH046107 B2 JP H046107B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- impurity
- layer
- base
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 36
- 239000012535 impurity Substances 0.000 claims description 22
- 230000005669 field effect Effects 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 208000012468 Ewing sarcoma/peripheral primitive neuroectodermal tumor Diseases 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62313156A JPH01155665A (ja) | 1987-12-12 | 1987-12-12 | 半導体集積回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62313156A JPH01155665A (ja) | 1987-12-12 | 1987-12-12 | 半導体集積回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01155665A JPH01155665A (ja) | 1989-06-19 |
| JPH046107B2 true JPH046107B2 (zh) | 1992-02-04 |
Family
ID=18037784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62313156A Granted JPH01155665A (ja) | 1987-12-12 | 1987-12-12 | 半導体集積回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01155665A (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013147272A1 (ja) | 2012-03-30 | 2013-10-03 | 日本碍子株式会社 | ハニカム形状セラミック多孔質体、その製造方法、及びハニカム形状セラミック分離膜構造体 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1254026C (zh) * | 2000-11-21 | 2006-04-26 | 松下电器产业株式会社 | 通信系统用仪器 |
-
1987
- 1987-12-12 JP JP62313156A patent/JPH01155665A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013147272A1 (ja) | 2012-03-30 | 2013-10-03 | 日本碍子株式会社 | ハニカム形状セラミック多孔質体、その製造方法、及びハニカム形状セラミック分離膜構造体 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01155665A (ja) | 1989-06-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |