JPH0451795U - - Google Patents
Info
- Publication number
- JPH0451795U JPH0451795U JP9280590U JP9280590U JPH0451795U JP H0451795 U JPH0451795 U JP H0451795U JP 9280590 U JP9280590 U JP 9280590U JP 9280590 U JP9280590 U JP 9280590U JP H0451795 U JPH0451795 U JP H0451795U
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- black
- electrode
- back electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims description 36
- 239000010408 film Substances 0.000 claims description 35
- 239000012212 insulator Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 230000001747 exhibiting effect Effects 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 238000009413 insulation Methods 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 238000002834 transmittance Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Description
第１図乃至第１８図は夫々この考案の実施例で
ある薄膜ＥＬ素子を示す断面図、第１９図はこの
考案に用いられる酸化Ｔａの抵抗率および光透過
率を示すグラフ、第２０図はこの考案の実施例の
薄膜ＥＬ素子のコントラストを従来のものと比較
して示すグラフ、第２１図は従来の薄膜ＥＬ素子
の例を示す断面図である。
１……ガラス基板、２……透明電極、３……第
１絶縁体層、４……発光体層、５……第２絶縁体
層、６……金属背面電極、７……交流電源、８…
…酸化Ｔａ黒色導体、９……絶縁体膜、１０……
背面黒色膜、１１……絶縁体層、１２……黒色絶
縁膜、１３……半透明黒色膜。
Figures 1 to 18 are cross-sectional views showing thin film EL devices that are examples of this invention, Figure 19 is a graph showing the resistivity and light transmittance of Ta oxide used in this invention, and Figure 20 is a graph showing the resistivity and light transmittance of Ta oxide used in this invention. FIG. 21 is a graph showing the contrast of a thin film EL device according to an embodiment of this invention in comparison with a conventional one, and FIG. 21 is a cross-sectional view showing an example of a conventional thin film EL device. DESCRIPTION OF SYMBOLS 1... Glass substrate, 2... Transparent electrode, 3... First insulator layer, 4... Luminous layer, 5... Second insulator layer, 6... Metal back electrode, 7... AC power supply, 8...
...Ta oxidized black conductor, 9...Insulator film, 10...
Back side black film, 11... Insulator layer, 12... Black insulating film, 13... Translucent black film.
Claims (1)
と背面電極との間にＥＬ発光を呈する薄膜発光層
を介在させた薄膜ＥＬ素子において、背面電極を
Ｔａの不完全酸化黒色膜で形成したことを特徴と
する薄膜ＥＬ素子。 ２ 透明基板の上に透明電極を積層し該透明電極
と背面電極との間にＥＬ発光を呈する薄膜発光層
を介在させた薄膜ＥＬ素子において、背面電極を
Ｔａの不完全酸化黒色膜と金属膜との積層により
形成したことを特徴とする薄膜ＥＬ素子。 ３ 前記背面電極の上に低誘電率高抵抗の絶縁体
膜を形成し、その上にＴａの不完全酸化黒色膜を
設けたことを特徴とする請求項１または２の薄膜
ＥＬ素子。 ４ 透明基板の上に透明電極を積層し該透明電極
と黒色化した背面電極との間にＥＬ発光を呈する
薄膜発光層を介在させ該背面電極の上に絶縁体を
該絶縁体の上に背面電極と同一物質の背面黒色膜
を配置した薄膜ＥＬ素子において、前記背面電極
と薄膜発光層との間および前記背面黒色膜と絶縁
体との間に同一の物質からなる絶縁物を配置した
ことを特徴とする薄膜ＥＬ素子。 ５ 前記背面電極と背面黒色膜とがＴａの不完全
酸化膜である請求項４の薄膜ＥＬ素子。 ６ 透明基板の上に透明電極を積層し該透明電極
と背面電極との間にＥＬ発光を呈する薄膜発光層
を介在させた薄膜ＥＬ素子において、背面電極と
薄膜発光層との間に介在する絶縁膜に黒色絶縁膜
を用い、背面電極として黒色導体または黒色膜と
金属膜との積層を用いたことを特徴とする薄膜Ｅ
Ｌ素子。 ７ 前記背面電極の黒色導体または黒色膜をＴａ
の不完全酸化膜で形成し、前記黒色絶縁膜を前記
Ｔａの不完全酸化膜をさらに酸化した絶縁膜で形
成した請求項６の薄膜ＥＬ素子。 ８ 透明基板の上に透明電極、第１絶縁体層、Ｅ
Ｌ発光を呈する発光体層、第２絶縁体層および背
面電極を順次積層した薄膜ＥＬ素子において、背
面電極をＴａの不完全酸化黒色膜で形成し、第１
絶縁体層または第２絶縁体層の一部を前記Ｔａの
不完全酸化黒色膜よりさらに酸化したＴａ酸化物
の絶縁膜を用いて形成した薄膜ＥＬ素子。 ９ 透明基板の上に透明電極を積層し該透明電極
と背面電極との間にＥＬ発光を呈する薄膜発光層
を介在させた薄膜ＥＬ素子において、透明電極と
薄膜発光層との間の絶縁膜の全部または一部を着
色した絶縁膜で形成したことを特徴とする薄膜Ｅ
Ｌ素子。 １０ 透明基板の上に透明電極を積層し該透明電
極と背面電極との間にＥＬ発光を呈する薄膜発光
層を介在させた薄膜ＥＬ素子において、透明電極
と透明基板との間に着色した絶縁膜を介在させた
ことを特徴とする薄膜ＥＬ素子。 １１ 前記着色した絶縁膜をＴａの不完全酸化絶
縁膜で形成した請求項９または１０の薄膜ＥＬ素
子。 １２ 前記背面電極を黒色導体または黒色膜と金
属膜の積層で形成した請求項９乃至１１の薄膜Ｅ
Ｌ素子。 １３ 透明基板の上に透明電極を積層し該透明電
極と背面電極との間にＥＬ発光を呈する薄膜発光
層を介在させた薄膜ＥＬ素子において、透明基板
の透明電極と反対側に半透明黒色膜を設けたこと
を特徴とする薄膜ＥＬ素子。 １４ 前記半透明黒色膜としてＴａの不完全酸化
物を用いた請求項１３の薄膜ＥＬ素子。 １５ 前記背面電極として黒色膜と金属膜との積
層を用いた請求項１３の薄膜ＥＬ素子。[Claims for Utility Model Registration] 1. In a thin film EL device in which a transparent electrode is laminated on a transparent substrate and a thin film emitting layer that emits EL light is interposed between the transparent electrode and the back electrode, the back electrode is made of Ta. A thin film EL device characterized in that it is formed of an incompletely oxidized black film. 2. In a thin film EL element in which a transparent electrode is laminated on a transparent substrate and a thin film emitting layer that emits EL light is interposed between the transparent electrode and the back electrode, the back electrode is formed of a partially oxidized black film of Ta and a metal film. A thin film EL device characterized in that it is formed by laminating with. 3. The thin film EL device according to claim 1, wherein an insulating film having a low dielectric constant and high resistance is formed on the back electrode, and a partially oxidized black film of Ta is provided thereon. 4 A transparent electrode is laminated on a transparent substrate, a thin film emitting layer exhibiting EL light is interposed between the transparent electrode and a blackened back electrode, and an insulator is placed on the back electrode. In a thin film EL element in which a back black film made of the same material as the electrode is arranged, an insulator made of the same material is arranged between the back electrode and the thin film light emitting layer and between the back black film and the insulator. Characteristic thin film EL element. 5. The thin film EL device according to claim 4, wherein the back electrode and the back black film are incompletely oxidized Ta films. 6 In a thin film EL element in which a transparent electrode is laminated on a transparent substrate and a thin film emitting layer that emits EL light is interposed between the transparent electrode and the back electrode, the insulation interposed between the back electrode and the thin film emitting layer is Thin film E characterized in that a black insulating film is used as the film, and a black conductor or a laminated layer of a black film and a metal film is used as the back electrode.
L element. 7 The black conductor or black film of the back electrode is made of Ta.
7. The thin film EL device according to claim 6, wherein the black insulating film is formed of an insulating film obtained by further oxidizing the incompletely oxidized Ta film. 8 Transparent electrode, first insulator layer, E
In a thin film EL element in which a light emitter layer exhibiting L-emission, a second insulator layer and a back electrode are sequentially laminated, the back electrode is formed of a partially oxidized black film of Ta, and the first
A thin film EL device in which a part of the insulator layer or the second insulator layer is formed using an insulating film of Ta oxide that is further oxidized than the incompletely oxidized black film of Ta. 9 In a thin film EL element in which a transparent electrode is laminated on a transparent substrate and a thin film emitting layer that emits EL light is interposed between the transparent electrode and the back electrode, an insulating film between the transparent electrode and the thin film emitting layer is Thin film E characterized by being formed entirely or partially of a colored insulating film
L element. 10 In a thin film EL element in which a transparent electrode is laminated on a transparent substrate and a thin film emitting layer that emits EL light is interposed between the transparent electrode and the back electrode, a colored insulating film is provided between the transparent electrode and the transparent substrate. 1. A thin film EL device characterized by interposing. 11. The thin film EL device according to claim 9 or 10, wherein the colored insulating film is formed of an incompletely oxidized Ta insulating film. 12. The thin film E according to claims 9 to 11, wherein the back electrode is formed of a black conductor or a laminate of a black film and a metal film.
L element. 13 In a thin film EL element in which a transparent electrode is laminated on a transparent substrate and a thin film emitting layer that emits EL light is interposed between the transparent electrode and the back electrode, a translucent black film is provided on the side of the transparent substrate opposite to the transparent electrode. A thin film EL element characterized by being provided with. 14. The thin film EL device according to claim 13, wherein an incomplete oxide of Ta is used as the semitransparent black film. 15. The thin film EL device according to claim 13, wherein the back electrode is a laminated layer of a black film and a metal film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990092805U JP2548182Y2 (en) | 1990-09-04 | 1990-09-04 | High contrast thin film EL device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990092805U JP2548182Y2 (en) | 1990-09-04 | 1990-09-04 | High contrast thin film EL device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0451795U true JPH0451795U (en) | 1992-04-30 |
| JP2548182Y2 JP2548182Y2 (en) | 1997-09-17 |
Family
ID=31829542
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990092805U Expired - Lifetime JP2548182Y2 (en) | 1990-09-04 | 1990-09-04 | High contrast thin film EL device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2548182Y2 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57123687A (en) * | 1981-01-23 | 1982-08-02 | Sumitomo Electric Industries | Thin film light emitting element |
| JPS60117600U (en) * | 1984-01-17 | 1985-08-08 | 日産自動車株式会社 | Thin film EL panel |
| JPS62290096A (en) * | 1986-05-23 | 1987-12-16 | 株式会社小松製作所 | Thin film el device |
| JPS6443998A (en) * | 1987-08-11 | 1989-02-16 | Alps Electric Co Ltd | Membranous el display element |
-
1990
- 1990-09-04 JP JP1990092805U patent/JP2548182Y2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57123687A (en) * | 1981-01-23 | 1982-08-02 | Sumitomo Electric Industries | Thin film light emitting element |
| JPS60117600U (en) * | 1984-01-17 | 1985-08-08 | 日産自動車株式会社 | Thin film EL panel |
| JPS62290096A (en) * | 1986-05-23 | 1987-12-16 | 株式会社小松製作所 | Thin film el device |
| JPS6443998A (en) * | 1987-08-11 | 1989-02-16 | Alps Electric Co Ltd | Membranous el display element |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2548182Y2 (en) | 1997-09-17 |
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