JPH0447649A - Cathode-ray tube - Google Patents
Cathode-ray tubeInfo
- Publication number
- JPH0447649A JPH0447649A JP15652890A JP15652890A JPH0447649A JP H0447649 A JPH0447649 A JP H0447649A JP 15652890 A JP15652890 A JP 15652890A JP 15652890 A JP15652890 A JP 15652890A JP H0447649 A JPH0447649 A JP H0447649A
- Authority
- JP
- Japan
- Prior art keywords
- frame
- diameter
- shadow mask
- mask
- parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2229/00—Details of cathode ray tubes or electron beam tubes
- H01J2229/07—Shadow masks
- H01J2229/0727—Aperture plate
- H01J2229/0766—Details of skirt or border
- H01J2229/0772—Apertures, cut-outs, depressions, or the like
Landscapes
- Electrodes For Cathode-Ray Tubes (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業−にの利用分野〕
本発明はシャドウマスクを用いた陰極線管に関し、詳し
くばンヤドウマスクのスカート部外周面に形成されてフ
レーム内へのシャドウマスクの嵌挿を改善するハーフエ
ッチ構造に関するものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a cathode ray tube using a shadow mask, and more specifically, a cathode ray tube using a shadow mask, which is formed on the outer peripheral surface of the skirt portion of a banyado mask to improve fitting of the shadow mask into the frame. This relates to a half-etched structure.
シャドウマスクを用いたカラー陰極線管は、第3図に示
すように、ハルツのファンネル部(1)とパネル部(2
)とを別個に形成し、シャドウマスク(3)や磁気シー
ルド(図示せず)を内蔵した後、ガラス粉末等のシール
(4)にて封着した構造を有する。上記ファンネル部(
1)の内面には2次電子回収のための内部導電膜が被着
され、パネル部(2)の内面には3原色発光のための蛍
光膜(8)(第4図参照)が被着されている。A color cathode ray tube using a shadow mask consists of a Harz funnel part (1) and a panel part (2), as shown in Figure 3.
) is formed separately, a shadow mask (3) and a magnetic shield (not shown) are built in, and then sealed with a seal (4) made of glass powder or the like. Above funnel part (
An internal conductive film for collecting secondary electrons is coated on the inner surface of panel section 1), and a fluorescent film (8) for emitting light in three primary colors is coated on the inner surface of panel section (2) (see Figure 4). has been done.
又、3原色を選択発光させるためのシャドウマスク(3
)は、第3図及び第4図に示すように、鋼鉄製フレーム
(5)内にスカート部(3a)を嵌挿してその所定位置
をフレーム内周面に溶接したものである。そして、フレ
ーム(5)はその側面(5a)に、端部(6a)に取り
付は孔(6b)を有するスプリンタ (6)が取り付け
られ、パネル部(2)の内面に設けたスタッドピン(7
)に取り付は孔(6b)を嵌めてパネル部(2)に支持
させている。In addition, a shadow mask (3
), as shown in FIGS. 3 and 4, has a skirt portion (3a) fitted into a steel frame (5) and welded at a predetermined position to the inner peripheral surface of the frame. The frame (5) is fitted with a splinter (6) having a hole (6b) on its side surface (5a) and an end (6a), and a stud pin provided on the inner surface of the panel section (2). (7
) is mounted by fitting the hole (6b) and supporting it on the panel part (2).
ここで、シャドウマスク(3)は動作時に約85%の電
子ビームが1脂突して約80℃まで昇温するため、第5
図に示すように、マスク面が加熱・膨張によってマスク
(3b)に変形し、同じ電子ビーム透過孔(3c1)が
(3C2)へ位置ずれする。そうすると、電子銃(9)
(第3図参照)より電子ビーム透過孔(3c+ )を通
過して蛍光膜の対応する蛍光体ドツト(8a)に照射さ
れるべき電子ビーム(EB’)が電子ビーノー透過孔(
3C2)を通過して隣の蛍光体ドツト(8b)にも一部
、照射されて色ずれを生じ、所謂、ドーミングが発生ず
る。このドーミングを極力少なくする為に低熱膨張材で
ある36%Ni含有のインバー材のシャドウマスク(3
)が使用されている。ところが、インバー材はスプリン
グハックが大きく、プレスの成形性が悪いため、フレー
−/x(5)内へシャドウマスク(3)のスカート部(
3a)を嵌挿してマスクの曲率を一定に保持しているが
、同時に嵌挿作業が困難であるという難点を持つ。そこ
で、第4図に示すように、その対策としてシャドウマス
ク(3)のスカート部(3a)の外周面にハーフエツチ
ングにより半球状にえぐられたドツト状凹所(3b)−
を複数個、所定ピッチで形成し、上記スカート部(3a
)を部分的に薄くすることにより変形し易くして上記嵌
挿作業を容易にしている。Here, during operation, about 85% of the electron beam hits the shadow mask (3) and the temperature rises to about 80°C, so the temperature of the shadow mask (3) increases to about 80°C.
As shown in the figure, the mask surface is transformed into a mask (3b) by heating and expansion, and the same electron beam transmission hole (3c1) is shifted to (3C2). Then, the electron gun (9)
(See Figure 3), the electron beam (EB') that passes through the electron beam transmission hole (3c+) and is to be irradiated onto the corresponding phosphor dot (8a) of the fluorescent film is transmitted through the electron beam transmission hole (3c+).
3C2) and is also partially irradiated onto the adjacent phosphor dot (8b), causing color shift and so-called doming. In order to minimize this doming, a shadow mask (3
) is used. However, the Invar material has a large spring hack and has poor press formability, so the skirt part of the shadow mask (3) (
Although the curvature of the mask is kept constant by inserting 3a), it also has the disadvantage that the inserting operation is difficult. Therefore, as shown in FIG. 4, as a countermeasure, dot-shaped recesses (3b) are hollowed out into a hemispherical shape by half-etching on the outer peripheral surface of the skirt portion (3a) of the shadow mask (3).
are formed at a predetermined pitch, and the skirt portion (3a
) is made partially thinner so that it is easily deformed and the above-mentioned insertion and insertion work is facilitated.
ところで、上述したように、シャドウマスク(3)はそ
のスカート部(3a)に複数のドツト状凹所(3b)−
を形成してフレーム(5)内への嵌挿作業を容易にして
いる。ところが、上記凹所(3h)−の直径(AI )
及び深さ(d 1 )は特定の値に設定されておらず、
それらが大き過ぎると、スカート部(3a)の強度が弱
くなって上記嵌挿作業は容易となるが、マスクの曲率を
一定に保持することが困難となる。逆に、上記直径(A
l)及び深さ(dl)が小さ過ぎると、フレーム(5)
内へシャドウマスク(3)を嵌挿しに(くなるという不
具合があった。By the way, as mentioned above, the shadow mask (3) has a plurality of dot-shaped recesses (3b) in its skirt portion (3a).
is formed to facilitate insertion into the frame (5). However, the diameter (AI) of the recess (3h)
and depth (d 1 ) are not set to specific values,
If they are too large, the strength of the skirt portion (3a) will be weakened, making the above-mentioned insertion operation easier, but it will be difficult to maintain a constant curvature of the mask. Conversely, the above diameter (A
l) and depth (dl) are too small, frame (5)
There was a problem that the shadow mask (3) would not fit when inserted inside.
又、フレーム(5)への内周面にシャドウマスク(3)
のスカート部(3a)を溶接する際、溶接部位に凹所(
3b)−があると、密着性が低下してスパッタを発生さ
せ、製品特性に悪影響を与えるという不具合もあった。Also, a shadow mask (3) is placed on the inner peripheral surface of the frame (5).
When welding the skirt part (3a), a recess (
If 3b)- is present, there is a problem that adhesion is reduced and spatter is generated, which adversely affects product characteristics.
本発明は、パネル部内に収容するシャドウマスク取付用
フレーム内に、インバー材で形成したシャドウマスクの
スカーj・部を嵌挿させて溶接した陰極線管において、
上記シャドウマスクスカート部外周面に、ハーフエツチ
ングにより半球状でその直径が7スク板厚に比例すると
共に、深さが直径の略半分のドツト状凹所を複数個、所
定ピンチで、かつ、フレームとの溶接部位を除いて形成
したことを特徴とする。The present invention provides a cathode ray tube in which a scar part of a shadow mask made of an invar material is fitted and welded into a shadow mask mounting frame housed in a panel part.
On the outer circumferential surface of the shadow mask skirt part, a plurality of dot-shaped recesses are formed by half-etching into a hemispherical shape, the diameter of which is proportional to the thickness of the 7th board, and the depth of which is approximately half the diameter, with a predetermined pinch. It is characterized in that it is formed excluding the welded part with.
上記技術的手段によれば、シャドウマスクスカート部外
周面にハーフエツチングにより所定寸法のドツト状凹所
を複数個、所定ピッチで、かつ、フレームとの溶接部位
を除いて形成し、フレーム内へ上記スカート部を滑らか
に嵌挿すると共に、溶接部位においてフレーム内周面と
上記スカート部外周面との密着性が良好になる。According to the above technical means, a plurality of dot-shaped recesses of predetermined dimensions are formed by half-etching on the outer peripheral surface of the shadow mask skirt portion at a predetermined pitch, excluding the welded portion with the frame, and the The skirt portion can be smoothly inserted and inserted, and the adhesion between the inner circumferential surface of the frame and the outer circumferential surface of the skirt portion at the welding site is good.
本発明の実施例を第1図及び第2図を参照して以下に説
明する。第4図と同一参照符号は同一部分を示しその説
明を省略する。相違する点は、シャドウマスク(3)の
スカート部(3a)の外周面においてハーフエツチング
により複数の半球状のドツト状凹所(3d)−を所定ピ
ンチで形成する際、その直径(A2)がマスク板厚(1
)に比例する(A2 =kT、にはドツトピッチによっ
て決まる定数)と共に、深さ(d2)が直径(A2)の
略半分になるように設定し、かつ、フレーム(5)との
溶接部位(P)、例えは、コーナ部の4ケ所と、長短辺
に各2ケ所で計12ケ所を除いて形成したことである。Embodiments of the present invention will be described below with reference to FIGS. 1 and 2. The same reference numerals as in FIG. 4 indicate the same parts, and the explanation thereof will be omitted. The difference is that when a plurality of hemispherical dot-shaped recesses (3d) are formed with a predetermined pinch on the outer peripheral surface of the skirt portion (3a) of the shadow mask (3) by half etching, the diameter (A2) is Mask plate thickness (1
) (A2 = kT, is a constant determined by the dot pitch), the depth (d2) is set to be approximately half of the diameter (A2), and the welding area (P ), for example, they are formed at 12 locations, excluding 4 locations at the corners and 2 locations each on the long and short sides.
上記構成によれば、上記スカート部(3a)をフレーム
(5)へ滑らかに嵌挿できると共に、嵌挿後においてマ
スクの曲率を一定に保持できる。更に、溶接電極(9)
によりスカーI一部(3a)の外周面とフレーム(5)
の内周面とを溶接する際、その部位(P)において両者
の密着性が良くなってスパッタの発生を防止できる。測
定によれば、t−0,15m(7)時、A2 =200
±5 pmXd2 =90tt m (k =1.3
3xlO−3)になることが知られている。According to the above configuration, the skirt portion (3a) can be smoothly inserted into the frame (5), and the curvature of the mask can be kept constant after being inserted. Furthermore, welding electrode (9)
The outer peripheral surface of part of Scar I (3a) and frame (5)
When welding the inner circumferential surface of the material to the inner peripheral surface of the material, the adhesion between the two is improved at that portion (P), and generation of spatter can be prevented. According to the measurement, at t-0, 15m(7), A2 = 200
±5 pmXd2 =90tt m (k =1.3
3xlO-3).
本発明によれば、シャドウマスクのスカート部をその取
付用フレームに嵌挿して取り付けたカラ陰極線管におい
て、上記スカート部外周面にハーフエツチングにより半
球状でその直径がマスク板厚に比例すると共に、深さが
直径の略半分のドツト状凹所を複数個、所定ピッチで、
かつ、フレーノ、との?′8接部位を除いて形成したか
ら、上記スカート部のフレームへの嵌挿が容易になって
作業性が向上し、かつ、スカート部外周面とフレーム内
周面との密着性が良くなってスパッタの発生がなくなり
、製品の特性が向上する。According to the present invention, in a color cathode ray tube in which the skirt portion of a shadow mask is fitted and attached to its mounting frame, the outer circumferential surface of the skirt portion is half-etched to form a hemispherical shape whose diameter is proportional to the mask plate thickness; Multiple dot-shaped recesses with a depth of approximately half the diameter are formed at a predetermined pitch.
And with Freno? Since the skirt part is formed excluding the contact area, it is easier to fit the skirt part into the frame, improving workability, and improving the adhesion between the outer circumferential surface of the skirt part and the inner circumferential surface of the frame. Spatter generation is eliminated and product properties are improved.
第1図は本発明に係る陰極線管の実施例を示す要部側断
面図、第2図は本発明に係るシャドウマスクの部分平面
図、第3図と第4図は従来の陰極線管の一具体例を示す
断面図とその部分拡大図、第5図はドーミングを示すシ
ャドウマスクとパネル部の部分側断面図である。
(2) −パネル部、 (3)
(3a)−メカ−1一部、 (3d)(5)−フレー
ム、 (P)
シャドウマスク、
凹所、
溶接部位。
特
許
出
願
人
関西日本電気株式会社
\FIG. 1 is a sectional side view of a main part showing an embodiment of a cathode ray tube according to the present invention, FIG. 2 is a partial plan view of a shadow mask according to the present invention, and FIGS. 3 and 4 are a side view of a conventional cathode ray tube. FIG. 5 is a cross-sectional view showing a specific example and a partially enlarged view thereof, and FIG. 5 is a partial side cross-sectional view of a shadow mask and a panel portion showing doming. (2) - Panel part, (3) (3a) - Part of mechanism 1, (3d) (5) - Frame, (P) Shadow mask, recess, welding part. Patent applicant Kansai NEC Corporation\
Claims (1)
たインバー材のシャドウマスクをそのスカート部でフレ
ームと溶接固定する陰極線管において、 上記スカート部はフレームとの溶接部位を除く外周面に
直径が板厚に比例すると共に、深さが直径の略半分の半
球状凹所をハーフエッチングにより形成したことを特徴
とする陰極線管。(1) In a cathode ray tube in which a shadow mask made of invar material is fitted into a mounting frame housed in a panel part and is fixed to the frame by welding at its skirt part, the skirt part has a diameter on the outer peripheral surface excluding the welded part with the frame. 1. A cathode ray tube characterized in that a hemispherical recess is formed by half-etching so that the depth is proportional to the plate thickness and the depth is approximately half the diameter.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2156528A JP2934285B2 (en) | 1990-06-13 | 1990-06-13 | Cathode ray tube |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2156528A JP2934285B2 (en) | 1990-06-13 | 1990-06-13 | Cathode ray tube |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0447649A true JPH0447649A (en) | 1992-02-17 |
JP2934285B2 JP2934285B2 (en) | 1999-08-16 |
Family
ID=15629764
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2156528A Expired - Lifetime JP2934285B2 (en) | 1990-06-13 | 1990-06-13 | Cathode ray tube |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2934285B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6384522B1 (en) | 1997-03-14 | 2002-05-07 | Kabushiki Kaisha Toshiba | Color cathode ray tube for reducing landing drift of electron beams on phosphor layers |
KR100350622B1 (en) * | 2000-12-22 | 2002-08-30 | 엘지전자주식회사 | The Color Cathode Ray Tube |
EP1432003A1 (en) * | 2002-12-20 | 2004-06-23 | Thomson Licensing S.A. | Cathode ray tube (CRT) including a shadow mask with a partially etched mask border and skirt |
KR100830973B1 (en) * | 2001-11-02 | 2008-05-20 | 삼성에스디아이 주식회사 | Cathode ray tube with shadow mask with improved buffer |
-
1990
- 1990-06-13 JP JP2156528A patent/JP2934285B2/en not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6384522B1 (en) | 1997-03-14 | 2002-05-07 | Kabushiki Kaisha Toshiba | Color cathode ray tube for reducing landing drift of electron beams on phosphor layers |
KR100350622B1 (en) * | 2000-12-22 | 2002-08-30 | 엘지전자주식회사 | The Color Cathode Ray Tube |
KR100830973B1 (en) * | 2001-11-02 | 2008-05-20 | 삼성에스디아이 주식회사 | Cathode ray tube with shadow mask with improved buffer |
EP1432003A1 (en) * | 2002-12-20 | 2004-06-23 | Thomson Licensing S.A. | Cathode ray tube (CRT) including a shadow mask with a partially etched mask border and skirt |
Also Published As
Publication number | Publication date |
---|---|
JP2934285B2 (en) | 1999-08-16 |
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