JPH0444313A - Semiconductor manufacturing equipment - Google Patents

Abstract

PURPOSE:To prevent generation of a particle by heating an upper surface of an outer reactive tube in the same degree as a semiconductor wafer by a heater. CONSTITUTION:An inner reactive tube 3 housing a semiconductor wafer 10 is vacuum-exhaust through an exhaust pipe 12. At this time, as soon as the semiconductor wafer 10 is heated up to a required temperature for chemical vaper growth by a cylindrical heater 1, an upper surface of an outer reactive tube 2 is heated to temperature of the same degree by an upper surface heater 4. Next, material gas is supplied through a gas induction tube 11 to a device. The operations described below are duplicated as a conventional embodiment and omitted here. For example, a temperature of each part in an LP-CVD device is controlled to a suitable one for forming a film on a surface of a semiconductor wafer 10, an outer reactive tube 2 and an inner reactive tube 3. On the other hand, since a flange 7 and a door 8 are water-cooled, a deposit is not caused on the surface. Accordingly, a deposit does not become a particle to adhere to the semiconductor wafer, wherein a defect caused by the particle of the semiconductor wafer can be prevented.

Description

Detailed Description of the Invention [Field of Industrial Application] The present invention relates to semiconductor manufacturing equipment, and in particular to a reduced pressure chemical vapor deposition equipment (hereinafter referred to as rLP-CVD) used for manufacturing semiconductor devices.
This is related to the improvement of the ``equipment'').

[Conventional technology]

FIG. 2 is a configuration diagram of a conventional LP-CVD apparatus. In the figure, l is a cylindrical heater, 2 is a quartz valgus housed in the cylindrical heater and is opened only at the lower end, and 3 is a A valgus chamber housed in this external reaction tube is opened at both the upper and lower ends, 5 is a heat insulating sealing material made of glass fiber that closes the gap between the cylindrical heater l and the valgus tube 2, and 7 is the above-mentioned It is a metal flange arranged on the lower side of the bunker front 2. Also, 8 is a metal door that moves up and down to close the opening of this flange 7, 9 is a quartz wafer support jig fixed on top of this door, and 10 is placed on this wafer jig 7. A semiconductor wafer, 11, is a gas introduction pipe, 1, which is attached to the flange 7 and has one end opened at the lower end of the anterior varus 3;
2 is an exhaust pipe 13 attached to the flange 7 and having one end opened between the anterior valgus 2 and the anterior valgus 3;
13b is an O-ring that seals between the flange 7 and the peripheral edge of the door 8; 14 is the upper part of the valgus front 2; This is an insulating block installed in the

Next, a film forming process using this LP-CVD apparatus will be explained.

First, the semiconductor wafer lO on which a film is to be formed
The semiconductor wafer 10 is then placed on the wafer support jig 9. Next, the door 8 on which the wafer support jig 9 is mounted is raised, and the semiconductor wafer 10 is placed on the wafer support jig 9.
and the wafer support jig 9 are housed in the anterior varus 3. Then, the exhaust pipe 12 is evacuated by an exhaust device (not shown), and the cylindrical heater 1 heats the semiconductor wafer 10 to a temperature required for chemical vapor deposition.

Next, a gas supply device (not shown) supplies the material gas required for film formation.
The gas is supplied into the apparatus from the gas introduction pipe 11. At this time, the amount of gas supplied is controlled, and the evacuation capacity is also controlled to adjust the gas pressure inside the device to a pressure suitable for low-pressure chemical vapor deposition (1T).

rr), and a film is deposited on the surface of the semiconductor wafer. After forming a film of the desired thickness, the supply of material gas is stopped and the device is evacuated to discharge the material gas.
Next, evacuation is stopped and nitrogen gas is supplied into the apparatus to return it to atmospheric pressure, and the door 8 is lowered to pull out the semiconductor wafer 10 and the wafer support jig 9 from the varus 9 tube 3.

During such vapor phase growth, the flow of the material gas is as shown by the arrows in FIG.

That is, the material gas is introduced from the gas introduction pipe 11 to the varus 9 tube 3 and flows between the varus 9 tube 3 and the semiconductor wafer 10. The surface of the semiconductor wafer 10 is the same as the upper and lower semiconductor wafers 1.
A film is formed by a thermochemical reaction on the surface of the heated semiconductor wafer 10, which is exposed to the material gas diffusing between the wafers and the wafer.

The material gas then flows through the gap between the valgus 9-pipe 2 and the varus 9-pipe 3, and is exhausted from the exhaust pipe 12.

In each part of this LP-CVD apparatus, the sides of the semiconductor wafer 10, the 9-tube 3 and the 9-valve tube 2 are heated by a cylindrical heater 1, and maintained at a temperature suitable for thermochemical reactions. The flange 7 and door 8 are cooled with O-ring 1 by water cooling, etc.
3a and 13b are cooled so that they do not melt due to heat. Further, since the upper surface of the 9-valve tube 2 is not specially heated or cooled, its temperature is lower than the temperature of the semiconductor wafer IO. Therefore, nothing is formed on the surfaces of the low-temperature flange 7 and door 8, but on the surface of the semiconductor wafer 10,
A film is formed on the surface of the valgus 9 tube 3 and the inner surface of the valgus 9 tube 2, and the thermochemical reaction occurs incompletely on the upper surface of the valgus 9 tube 2, where the temperature is low, so that other parts Powder-like deposits, which are different from the films that can be formed, or a film that is brittle and easily peels off, is deposited.

[Problem to be solved by the invention]

Since conventional semiconductor manufacturing equipment was configured as described above, powdery deposits and brittle films were formed on the inside of the upper surface of the 9-valve tube 2, which caused the LP-CVD equipment to be returned to use. There was a problem in that this deposit peeled off from the valance tube 2, became particles, and adhered to the surface of the semiconductor wafer 10, causing defects in the functional elements formed on the semiconductor wafer 10. In addition, in order to suppress the occurrence of verticolor, the eversion 9 tube 2 must be washed frequently, resulting in problems such as a low operating rate of this device.

This invention was made to solve the above-mentioned problems, and is a semiconductor manufacturing method that can eliminate the generation of powdery products and brittle films on the inside of the upper surface of the 9-valve tube, which cause particles. The purpose is to obtain equipment.

[Means to solve the problem]

A semiconductor manufacturing apparatus according to the present invention is one in which a heater is provided on a nine-valve tube.

[Function] In this invention, since the heater is provided above the 9-valve tube, the upper surface of the outer reaction tube is heated to the same extent as the semiconductor wafer by the heater, so that the surface of the semiconductor wafer is also heated inside the upper surface of the outer reaction tube. As a result, a film similar to that shown in FIG.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a schematic configuration diagram of a semiconductor manufacturing apparatus according to an embodiment of the present invention. In FIG. 6, the same reference numerals as in FIG. The upper surface heater 6 is connected to the upper surface heater 4 and the cylindrical heater 1.
This is the upper heat insulating sealing material installed in the gap between the

Next, the operation will be explained.

Similar to the conventional LP-CVD apparatus, the semiconductor wafer 10 is housed in the inner chamber 3 and evacuated from the exhaust pipe 12. At this time, the cylindrical heater 1 is used to evacuate the semiconductor wafer 10 for chemical vapor deposition. At the same time, the upper surface heater 4 heats the upper surface of the anterior valgus 2 to a temperature comparable to the above temperature.

Next, material gas is supplied into the apparatus from the gas introduction pipe 11.

The following operation is the same as that of the conventional example, so it will be omitted here.

The temperature of each part of the LP-CVD apparatus of this example is as follows: Valgus 9 tubes 2. The inner reaction tube 3 is controlled at a temperature suitable for forming a film on its surface, while the Franchiff and door 8 are water-cooled as described in the conventional example, so that no surface deposition occurs.

In this embodiment, since the upper surface heater 4 is provided on the upper part of the valgus 9 tube 2, the upper surface of the valgus front 2 is also heated when the material gas is flowing into the device, and the upper surface of the valgus front 2 is heated. A film similar to that on the surface of the semiconductor wafer 10 is also formed on the inside of the upper surface. This prevents the accumulation of powdery deposits and brittle and easily peelable films on the upper surface of the valgus self-container 2, and these deposits do not turn into particles and adhere to the semiconductor wafer, thereby preventing defects caused by particles on the semiconductor wafer. It can be prevented. In addition, since no particles are generated, in order to suppress the generation of vertiform particles, we frequently
There is no need to clean the equipment, which prevents a decrease in the operating rate of the equipment.

In addition, although the above-mentioned embodiment shows a heater having two heaters, the cylindrical heater 1 and the upper heater 4, this may be a heater in the form of a cylinder with one end closed, in which the two heaters are integrated. The same effects as in the above embodiment are achieved.

〔Effect of the invention〕

As described above, according to the present invention, since the heater is arranged also on the upper surface in front of the valgus, a film similar to that on the side surface of the reaction tube and the surface of the semiconductor wafer is deposited on the inner side of the upper surface in front of the valgus. This has the effect of suppressing the generation of particles inside the upper surface of the reaction tube, making it possible to obtain defect-free semiconductor products, and increasing the operating rate of semiconductor manufacturing equipment.

[Brief explanation of drawings]

FIG. 1 is a schematic diagram showing the configuration of a semiconductor manufacturing device according to an embodiment of the present invention, FIG. 2 is a schematic diagram showing the configuration of a conventional semiconductor manufacturing device, and FIG. 3 is the device shown in FIGS. 1 and 2. FIG. In the figure, 1 is a cylindrical heater, 2 is a valgus front, 3 is a varus front, 4 is a top heater, 5 is a bottom heater, 6 is a cylindrical heater.
is the upper heat insulation sealing material, 7 is the flange, 8 is the door, 9 is the wafer support jig, IO is the semiconductor wafer, 11 is the gas introduction pipe,
12 is an exhaust pipe, 13a and 13b are O-rings, and 14 is a heat insulating block. Note that the same reference numerals in the figures indicate the same or equivalent parts. Figure 1 Shin 71!21 Figure 3 2') IM-f 3:/MiW 7: Nowo>shi8, Aa

Claims (1)

[Claims] (1) a reaction tube arranged so that its axial direction coincides with the vertical direction and having an opening at its lower end; an evacuation means for evacuating the inside of the reaction tube; and a gas supply means for supplying a material gas into the reaction tube; a heater that heats the inside of the reaction tube;
1. A semiconductor manufacturing apparatus comprising a wafer support jig for horizontally placing a large number of semiconductor wafers in a reaction tube, characterized in that the heater is arranged so as to surround the side and top surfaces of the reaction tube.