JPH04358085A - Surface treatment equipment, surface treatment method, and semiconductor device manufacturing method - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention]

0001

[Industrial Application Field] The present invention relates to a surface treatment apparatus, a surface treatment method, and a method for manufacturing a semiconductor device, and more specifically,
This invention relates to devices and the like that treat solid surfaces with thermally excited molecular beams.

0002

[Prior Art] A surface treatment method using thermally excited molecular beams involves exciting the rotational, translational, and vibrational energy of molecules by heating a gas containing halogen such as SF6 in a furnace. This is a technology that forms an ejected beam in a vacuum and processes a solid surface with this beam (hereinafter, exciting molecules' rotational, translational, and vibrational energy is called thermally exciting molecules). Thermally excited molecules are highly reactive, so when this molecular beam is used to etch solid surfaces, for example in the manufacture of semiconductor devices, the etching rate is faster than when using non-thermally excited molecular beams. increases dramatically. The thermal energy of molecules is small compared to the energy of ions and electrons in plasma, so this technology is characterized by less damage to solids than conventional surface treatment methods that use charged particles. It is. Additionally, since it is a neutral particle beam, there is no negative charge on solids. A surface treatment technique using thermally excited molecular beams is described in JP-A-62-35521.

[0003] This conventional technique will be explained below using the drawings.

FIGS. 2 and 3 are the same as those shown in FIGS. 5 and 6 of Japanese Patent Application Laid-Open No. 62-35521. FIG. 2 is a block diagram of a surface treatment apparatus using thermally excited molecular beams. This device includes a vacuum chamber 101, a sample stage 103 that holds a sample 102, and a leak valve 104 for introducing gas 112.
, a gas heating means consisting of a heat source 105 and a heating furnace 106, and a pore 107 for ejecting gas into a vacuum. In this apparatus, in order to prevent contaminants from flying from the heating means 105 to the sample 102 and radiation of heat, the heating means 10
5 is provided outside the reaction chamber 101. Gas heating furnace 106
The outer wall of the gas heating furnace 106 will be exposed outside the vacuum chamber.
A vacuum seal 109 is required between the vacuum chamber 101 and the vacuum chamber 101. The flange 108 has a vacuum seal directly attached to the gas heating furnace 1.
This is to prevent contact with 06. In addition, the cooling means 1
10 is for preventing thermal damage to the vacuum seal. The coupling portion 111 is for facilitating replacement of the gas heating furnace 106.

However, as mentioned in the above-mentioned US patent specification, this method poses a problem such as oxidation of the heating means because the heating means is exposed to air. For example, if a tungsten heater is used as the heating means, the tungsten will be oxidized and the wire will break immediately when the heater is heated to a high temperature in the air.

The structure shown in FIG. 3 is an improvement over this problem. Here, the heating means 105 is placed in a chamber 121 that can be evacuated in order to prevent contaminants from flying into the sample 102 and radiation of heat, as well as to prevent oxidation of the heating means. There is a hole 122 through which the beam passes between the chamber 121 where the heating means is located and the reaction chamber 101 where the sample 102 is placed.
A separating plate 123 with an open space is provided, and although the two rooms are not completely airtightly separated, they can be differentially pumped.

[0007]

[Problems to be Solved by the Invention] However, as a result of our subsequent continuous experiments, it was found that there were still problems with the above-mentioned prior art. In other words, in an apparatus in which a separator is placed between the heating means and the sample, contaminants may fly in together with the molecular beam through the hole in the separator through which the molecular beam passes, and this contaminant may interfere with surface treatment. Understood.

[0008] The flying contaminants are caused by the following two points. First, gases such as halogens used for surface treatment flow through holes in the separator into the room containing the heating means. Because halogen gas is highly reactive, it easily reacts with heating means such as tungsten heaters to produce highly volatile products that become pollutants. Second, in the structure shown in FIG. 3, there is a high probability that the above-mentioned contaminants will fly directly onto the sample surface. In other words, the method of separating the sample and heating means with a hole-drilled separator has the advantage of being simple in structure, easy to manufacture, and easy to maintain. It exists because of the relative arrangement of the plate and the heating means. This situation is shown in FIG. FIG. 4 is an enlarged view of the nozzle 41 and the sample 44. Here heating means 4
2 means that there is no obstruction between the straight line AB connecting any point A on the surface of the heating means 42 to any point B on the surface of the sample 44. Generally, in the vacuum level of this device, the mean free path of molecules is on the order of several cm, so if there is no shield between A and B, contaminants will pass through the beam-passing hole in the separator 43 and directly onto the sample surface. Naturally, the level of contamination increases.

In other words, surface treatment using thermally excited molecular beams is much more sensitive to surface contamination than surface treatment using high-energy plasma, because the energy of the molecular beam is low as described above. For this reason, conventional contamination prevention measures have been found to be insufficient.

An object of the present invention is to provide a surface treatment apparatus that sufficiently prevents contaminants caused by a heating source from flying into a sample in an apparatus that treats a solid surface with a thermally excited molecular beam. .

[0011]

[Means for Solving the Problems] In the present invention, in order to solve the above object, the heating means and the reaction chamber are completely airtightly separated.

As another method, the structure of the separator was changed so that the heating means could not be directly exposed to the surface of the sample.

[0013] When it is necessary to treat the sample surface anisotropically, such as when etching the sample, it is necessary to form molecular beams by aligning the directions of molecules incident on the sample surface. There are two types of means for forming thermally excited molecular beams within the reaction chamber. The first type is a type in which a nozzle protrudes into the reaction chamber and a heat source is provided near the tip of the nozzle. Molecular beams are formed by heating and exciting the reactive gas within the nozzle and ejecting the excited reactive gas from the opening at the tip of the nozzle. The second is
The reactant gas near the sample in the reaction chamber is heated by a heat source, and a collimator is used to align the excited molecules of the reactant gas into a molecular line, which is then guided to the sample surface.

On the other hand, when performing oxidation, deposition, cleaning, etc. on the surface of a sample, anisotropic treatment is not necessary, so there is no need to form a molecular beam. Therefore, nozzles and collimators for forming molecular beams are not necessarily required.

[0015] The heating means includes electric resistance heating, infrared heating, high frequency heating, laser heating, and the like.

The gist of the present invention is the following 21 points.

(1) A first means for supplying a reaction gas to the sample for surface treatment of the sample, a second means for heating the first means, and an inside of the first means. third means for accommodating said second means within a space;
a fourth means for surface treating the sample within the second internal space; and a fifth means for supplying an inert gas into the second internal space; A surface treatment apparatus characterized in that the internal space and the second internal space are airtightly separated.

(2) a first means for supplying a reaction gas to the sample for surface treatment of the sample; a second means for heating the first means; and an interior of the first means. third means for accommodating said second means within a space;
a fourth means for surface treating the sample within the second internal space; and a fifth means for reducing pressure within the second internal space; A surface treatment apparatus characterized in that the second internal space is airtightly separated.

(3) A surface treatment method characterized by comprising the following steps.

(a) preparing a first means for supplying a reaction gas to the sample for surface treatment of the sample; (b) providing a second means for heating the first means; (c) supplying an inert gas into the first internal space; (d) providing a second internal space airtightly separated from the first internal space; (4) A surface treatment method comprising the following steps.

(a) preparing a first means for supplying a reaction gas to the sample for surface treatment of the sample; (b) providing a second means for heating the first means; (c) preparing the sample in the first internal space; (d) reducing the pressure in the first internal space; (d) preparing the sample in the second internal space, which is airtightly separated from the first internal space. Surface treatment step (5) A method for manufacturing a semiconductor device, comprising the following steps.

(a) preparing a first means for supplying a reaction gas to the semiconductor device for surface treatment of the semiconductor device; (b) a second means for heating the first means; (c) supplying an inert gas into the first internal space; (d) a second internal space airtightly separated from the first internal space; A step of surface treating the semiconductor device in space (
6) A method for manufacturing a semiconductor device, comprising the following steps.

(a) preparing a first means for supplying a reaction gas to the semiconductor device for surface treatment of the semiconductor device; (b) a second means for heating the first means; (c) preparing the inside space in the first internal space; (d) reducing the pressure in the first internal space; (d) preparing the Step (7) of surface treating a semiconductor device: a first means for supplying a reaction gas to the sample for surface treating the sample; a second means for heating the first means; a first space for accommodating a second means; a second space for surface-treating the sample therein; and a partial communication between the first space and the second space. , and a third means for partitioning other parts, a fourth means for shielding between the second means and the second space, and a third means for separating the other parts, and a fourth means for shielding between the second means and the second space, and into the second internal space. and fifth means for supplying an inert gas.

(8) a first means for supplying a reaction gas to the sample for surface treatment of the sample; a second means for heating the first means; and a second means for heating the first means. a first space for accommodating the sample, a second space for surface-treating the sample therein, and partially communicating with the first space and the second space, and a fourth means for shielding between the second means and the second space; and a fourth means for reducing the pressure in the second internal space. A surface treatment apparatus comprising a fifth means.

(9) A surface treatment method characterized by comprising the following steps.

(a) preparing a first means for supplying a reaction gas to the sample for surface treating the sample; (b) providing a second means for heating the first means; Step (c) of preparing in one internal space a third space for partially communicating the first space and a second space for surface treating the sample, and separating the other parts; (d) preparing a fourth means for shielding between the second means and the second space; (e) introducing an inert gas into the second interior space; (f) supplying the sample in the second internal space; (10) a surface treatment method comprising the following steps:

(a) preparing a first means for supplying a reaction gas to the sample for surface treating the sample; (b) providing a second means for heating the first means; Step (c) of preparing in one internal space a third space for partially communicating the first space and a second space for surface treating the sample, and separating the other parts; (d) preparing a fourth means for shielding between the second means and the second space; (e) reducing the pressure in the second interior space; (f) a step of surface-treating the sample in the second internal space; and (11) a method for manufacturing a semiconductor device, comprising the following steps.

(a) preparing a first means for supplying a reaction gas to the semiconductor device for surface treatment of the semiconductor device; (b) a second means for heating the first means; (c) providing partial communication between the first space and a second space for subjecting the semiconductor device to surface treatment, and separating other parts; (d) preparing a fourth means for shielding between the second means and the second space; (e) inside the second interior space; (f) supplying an inert gas to the second interior space; (12) a step of surface-treating the semiconductor device in the second internal space; and (12) a method for manufacturing a semiconductor device.

(a) preparing a first means for supplying a reaction gas to the semiconductor device for surface treating the semiconductor device; (b) a second means for heating the first means; (c) providing partial communication between the first space and a second space for subjecting the semiconductor device to surface treatment, and separating other parts; (d) preparing a fourth means for shielding between the second means and the second space; (e) inside the second interior space; (f) a step of surface-treating the semiconductor device in the second internal space; (13) a first means for supplying a reaction gas to the sample for surface-treating the sample; a second means for heating the first means; a third means for accommodating said first and second means within an interior space thereof; and for hermetically sealing said second means. A surface treatment apparatus characterized in that it has a fourth means.

(14) A surface treatment method characterized by comprising the following steps.

(a) preparing a first means for supplying a reaction gas to the sample for surface treatment of the sample; (b) preparing a second means for heating the first means; (c) providing a third means for accommodating said first and second means within its interior space; (d) hermetically sealing said second means; (e) said interior space; A method for manufacturing a semiconductor device, comprising the following steps: (15) surface treating the sample in space.

(a) preparing a first means for supplying a reaction gas to the semiconductor device for surface treating the semiconductor device; (b) a second means for heating the first means; (c) providing a third means for accommodating said first and second means in its interior space; (d) hermetically sealing said second means; (e) Step (16) of surface treating the semiconductor device in the internal space: a first means having a first internal space for accommodating a sample; a second means for heating the reaction gas supplied into the first interior space; and a third means for heating the reaction gas supplied into the first interior space; and a fifth means for supplying an inert gas into the second internal space, the first internal space and the second internal space A surface treatment device characterized by being airtightly separated from the space.

(17) a first means having a first internal space for accommodating a sample; a second means for heating a reaction gas for surface-treating the sample; a third means for accommodating the means in the second internal space; a fourth means for supplying an inert gas into the second internal space; and an active surface of the third means. and a collimator, and communicates with the first internal space via the collimator and is airtightly separated from the second internal space; and fifth means for supplying water into the interior space of the surface treatment apparatus.

(18) A first means having a first internal space for accommodating a sample, and a second means for supplying a reaction gas into the first internal space for surface treating the sample. means for heating the reaction gas supplied into the first interior space; and a fourth means for accommodating the third means in the second interior space. and a fifth means for reducing the pressure in the second internal space, and the first internal space and the second internal space are airtightly separated. surface treatment equipment.

(19) a first means having a first internal space for accommodating a sample; a second means for heating a reaction gas for surface-treating the sample; a third means for accommodating a means within a second interior space; a fourth means for reducing pressure within said second interior space; and an active surface and a collimator, said third means having a third internal space formed and communicated with the first internal space via the collimator and airtightly separated from the second internal space; and a fifth means for supplying.

(20) a first means for supplying a reaction gas to the sample for surface treatment of the sample; a second means for heating the first means; third means for accommodating said second means within a space; fourth means for surface treating said sample within said second interior space; a fifth means for supplying an active gas, and the first internal space and the second internal space are airtightly separated.

(21) A first means for supplying a reaction gas to the sample for surface treatment of the sample, a second means for heating the first means, and an inside of the first means. a third means for accommodating the second means in a space; a fourth means for surface treating the sample within the second interior space; and reducing the pressure within the first interior space. and a fifth means for doing so, wherein the first internal space and the second internal space are airtightly separated.

[0038]

[Operation] By airtightly separating the heating means and the reaction chamber, highly reactive gases such as halogens are prevented from flowing into the heating means and its vicinity, which reach high temperatures. Therefore, unnecessary chemical reactions between the substance constituting the heating means and the reaction gas can be suppressed.
Contamination of the sample due to heating sources is prevented.

Furthermore, even if the heating means and the reaction chamber are not airtightly separated, if the heating means is not directly exposed to the sample surface, the contaminants will collide with the walls and be adsorbed before reaching the sample surface. The degree of pollution can be reduced.

[0040]

[Embodiments] Examples of the present invention will be described below with reference to the drawings.

<Embodiment 1> FIG. 1 is a cross-sectional view showing the structure of an embodiment of a surface treatment apparatus according to the present invention.

The reaction chamber 1 is equipped with an exhaust device (not shown) for evacuating the chamber to a vacuum 51, and the reaction chamber 1 contains a sample 2 and a sample stage 3. The reaction chamber 1 is made of stainless steel from the viewpoint of strength and workability. Reactive gas 4 is introduced from the outside through nozzle 5. An electric resistance heating wire 6 made of tungsten or the like is wound around the outer periphery of the nozzle 5 as a heat source for heating the reactive gas 4 in a range of several centimeters near the opening of the end of the nozzle 5 on the side of the reaction chamber. Nozzle 5
are made of stable materials such as quartz. The inner diameter of the nozzle 5 is preferably in the range of several tenths of a millimeter to several millimeters. One or more nozzles 5 are used depending on the surface area of the sample. The reactive gas 4 passes through the nozzle 5 and is heated to become thermally excited molecules, which are ejected into the reaction chamber 1.
It becomes a beam (molecular beam) and hits the surface of the sample 2. Sample 2
When etching, Cl2, F is used as the reactive gas 4.
A halogen gas such as No. 2 or a halogen compound such as HCl or NF3 is usually used. The sample 2 is a semiconductor such as Si or GaAs, or a metal such as Al. In the embodiment shown in FIG. 1, the tungsten wire 6 as a heating source and the reaction chamber 1 are
The reaction chamber 1 is airtightly separated by the wall, side wall 7, and partition plate 8. In this embodiment, the side wall 7 is constructed integrally with the reaction chamber 1, and is made of stainless steel. The partition plate 8 is connected to the nozzle 6 and is made of quartz. Packing (O-ring) between side wall 7 and partition plate 8
It contains 9. Furthermore, the room containing the electrical resistance heating wire 6 is airtightly separated from the outside air by a packing 10, and the area around the electrical resistance heating wire 6 prevents the reaction between the substance constituting the electrical resistance heating wire 6 and the reactive gas 4. In order to prevent this, an inert gas 11 such as N2 or Ar is filled. A water-cooled pipe 12 is attached to the side wall 7, and the side wall 7 is water-cooled.

With the above configuration, the reactive gas 4 is prevented from entering the electrical resistance heating wire 6 and its surroundings. With this configuration, parts exposed to high temperatures, such as the inside of the electrical resistance heating wire 6 and the side wall 7, or the electrical wiring to the electrical resistance heating wire 6 (not shown in FIG. 1), do not react with the reactive gas, and the sample 2 It is possible to significantly reduce the factors that cause pollutants to fly into the air. <Embodiment 2> FIG. 5 is a cross-sectional view showing the structure of a second embodiment of the surface treatment apparatus according to the present invention. Electric resistance heating wire 6
The chamber is airtightly separated from the reaction chamber 1, and the heating source is vacuum-sealed. By evacuating 52 the area around the electrical resistance heating wire 6, chemical reactions between the substance forming the electrical resistance heating wire 6 and the gas existing around it are less likely to occur, so the life of the electrical resistance heating wire 6 can be extended. become longer. In addition,
In FIG. 5 and the following description, the same functions and components as those in FIG. 1 are denoted by the same numbers, and redundant description will be omitted.

FIG. 6 is an enlarged cross-sectional view of the connecting portion between the reaction chamber 1 and the nozzle 5 in the embodiment of the surface treatment apparatus shown in FIG. 1 or FIG. 5. As shown in FIG. The reactive gas 4 is a metal tube 15 made of stainless steel, etc.
from the inside of the reaction chamber 1. Metal tube 15 is flange 1
3, and the flange 13 is connected to the outer wall 53 of the reaction chamber via the packing 10. The metal tube 15 is
It is connected to the quartz nozzle 5 via a packing 16. In this structure, the gas introduction part is made of metal, so the strength is increased, and the gas introduction part is made of quartz.
It is easier to use than the device shown in . Electric resistance heating wire 6
An enclosure 14 made of quartz or the like is attached around the enclosure for heat retention.

FIG. 7 is an enlarged cross-sectional view showing another example of the configuration of the connecting portion between the reaction chamber 1 and the nozzle 5 in the embodiment of the surface treatment apparatus shown in FIG. 1 or FIG. In this example, nozzle 19
and a furnace 17 around which electric resistance heating wire 6 is wound are separated. The nozzle 19 may be a quartz tube, but here, in order to improve heat absorption, only the portion heated by the electric resistance heating wire 6 is made of graphite, and is connected to the quartz tube 18 through a connecting portion 20. Ceramic adhesive or the like is suitable for connection. In this structure, since a gap exists between the nozzle 19 and the furnace 17, the space between the reaction chamber 1 and the heating wire 6 chamber is not strictly airtight. However, for example, if this gap is made 1 mm or less and the length of the furnace 17 is about 5 cm, the conductance of this part is sufficiently small and the reaction chamber 1
If the chambers for the heating wire and the electrical resistance heating wire 6 are evacuated separately, contamination will no longer be a problem. In the structure of FIG. 7, the nozzle 19
Since the partition plate 8 can be easily removed, there is an advantage that maintenance such as repair of the nozzle is easier than in the case of airtight sealing.

In the embodiment of the above-mentioned patent application specification whose structure is shown in FIG. 3, a separator plate with holes through which the molecular beam passes is used, but the problem with this structure is that the conductance (gas (easiness of flow) becomes large and separation is not sufficient, and contaminants generated in the room where the heating means is placed directly reach the sample surface. In other words, in the configuration shown in FIG. 3, contaminants fly away together with reactive gas molecules necessary for surface treatment, so that the effect of contamination removal is weak. In the configuration shown in Figure 3, the gas flow conductance C1 (m3/s) of the separator with holes is defined as the area of the hole A (m2).
Then, equation (2) is obtained.

C1=116A ……
...(2) In order to pass the beam sufficiently, the diameter of the hole should be 3 x 1.
It needs to be about 0~3m. Then C2=8.2×
It becomes 10￣4m3/s.

On the other hand, in the structure shown in FIG. 7, the gas flow conductance C2 (m3/s ) is calculated as formula (1).

[0049] Here, K is a coefficient determined from d2/d1. Now, d1=4×10￣3m, d2=2×10￣3m,
If l=50×10￣3m, then K=1.15 and C2=3.3×10￣5m3/s. As described above, the flow conductance C2 between the reaction chamber 1 and the room where the heating means is placed in the structure of FIG. 7 is the same as the flow conductance C2 between the reaction chamber 1 and the room where the heating means is placed in the structure of FIG. It is more than one order of magnitude smaller than C1. Generally, in order to sufficiently reduce contamination, a shell-shaped furnace 17 as shown in FIG. Gas flow conductance per tube is 1×10￣4m3/s
It is necessary to do the following.

Embodiment 3 FIG. 8 is a cross-sectional view of a third embodiment of the surface treatment apparatus according to the present invention.

In this example, as shown in FIG. 8, in order to separate the heating means from the reaction chamber 1, only the electric resistance heating wire 6 as the heating source was hermetically sealed. The container 22 in which the electrical resistance heating wire 6 is hermetically sealed has a structure in which the nozzle 21 passes through the center. FIG. 9 is an enlarged view of a portion including the electrical resistance heating wire container 22 in FIG. 8, and the reactive gas 4 is introduced using a metal tube 15 in the same manner as in the embodiment shown in FIG. The electrical resistance heating wire container 22 is made of quartz or the like and the inside is evacuated, or
Fill with inert gas such as Ar. Electric resistance heating wire container 22
There is a sealing portion 24 for the lead wire 23 . The electrical resistance heating wire 6 has a metal wire with low resistance, that is, a lead wire 23 in the middle thereof.
connected to. For example, if the lead wire 23 is made of molybdenum, the sealing portion 24 is directly sealed to quartz, and for other metals that cannot be directly sealed to quartz, an intermediate glass suitable for the metal is used.

[0052] Lead wire 23 is connected to power introduction terminal 25. In the structure of this embodiment as well, since the electrical resistance heating wire 6 is not directly exposed to reactive gas, it is possible to prevent contaminants from flying into the sample.

<Embodiment 4> FIG. 10 is a cross-sectional view showing the structure of a fourth embodiment of the surface treatment apparatus according to the present invention. In this example and the examples described below, the reaction gas near the sample in the reaction chamber is heated with a heat source to generate thermally excited molecules, which are guided as a molecular beam to the sample surface using a collimator. It is something.

Reactive gas 4 is introduced into reaction chamber 1 . Above the surface of the sample 2 in the reaction chamber 1, there is an activation surface 27, that is, a heating plate for heating the reactive gas 4.
7 is heated by an electric resistance heating wire 26. The reactive gas 4 collides with this high temperature activation surface 27 and is thermally excited. A collimator 28 is provided between the sample 2 and the activation surface 27.
is arranged, and the thermally excited gas is aligned in direction by a collimator 28 and hits the sample 2. With this method, a large area of a sample can be etched more easily than with the nozzle method shown in FIG.

In this embodiment, the configuration of which is shown in FIG.
The activation surface 27 and a portion of the wall of the reaction chamber 1 hermetically separate the electrical resistance heating wire 26 from the reaction chamber 1 . A room in which an electric resistance heating wire 26 is disposed and is airtightly separated from the reaction chamber 1 is evacuated 52 or filled with an inert gas (not shown) to create a reduced pressure atmosphere. Figures 12 and 13
Similarly, in the following embodiments whose configuration is shown in FIG. 2, the room in which the electrical resistance heating wire 26 is disposed is either evacuated or filled with an inert gas so as to create a reduced pressure atmosphere.

The activated surface 27 is made of, for example, quartz, and is hermetically connected to the side wall 7 by a packing 29. Carbon or a metal film may be attached to the activated surface 27 on the electrical resistance heating wire 26 side in order to improve heat absorption. The electrical resistance heating wire 26 is preferably one in which electrical resistance heating wires are arranged so as to cover a flat surface, or one in which a ribbon-shaped carbon electrical resistance heating wire is arranged on a ceramic. The side wall 7 is cooled by a water cooling pipe 12. The reactive gas 4 does not enter the vicinity of the electrical resistance heating wire 26, preventing contamination.

FIG. 11 shows another configuration example in which the heating means are separated, in which an electrical resistance heating wire 30 such as a tungsten wire is enclosed in an electrical resistance heating wire cover 31. Figure 11 (
A) is a top view, and (b) is a cross-sectional view. The electrical resistance heating wire cover 31 is made of quartz, ceramic, or the like. The electrical resistance heating wire 30 connects to the lead wire 32 at the connection point 3 on the way.
They are connected through 3. The electrical resistance heating wire cover 31 itself serves as an activation surface.

<Embodiment 5> FIG. 12 shows a side sectional view of a fifth embodiment of the surface processing apparatus according to the present invention. Substantially Figure 1
Similarly to the fourth embodiment shown in FIG. 2, the volume of the reaction gas is reduced by providing an inner container 34 made of quartz or the like that covers the sample 2 and the collimator 28. Inner container 3
4 is airtightly separated from the chamber for the electrical resistance heating wire 26 by a packing 36. A flexible tube 37 is attached so that the inner container 34 can be opened and the sample 2 can be taken in and taken out. In this method, the ceiling 35 of the inner container 34 is heated by the electrical resistance heating wire 26 and serves as an activation surface.

<Embodiment 6> FIG. 13 is a cross-sectional view of a surface treatment apparatus that is a further improvement of the configuration shown in FIG. 10. In this embodiment, an enclosure 39 made of quartz or the like is provided in the space between the activation surface 27 and the collimator 28. Since the reactive gas 4 is required only in the minimum necessary area, contamination is further reduced and heating efficiency is also improved.

According to the present invention, it is extremely difficult for reactive gases to enter the heating means and the vicinity of the heating means, which reach a high temperature, so that the generation of contaminants from there can be sufficiently reduced. Further, it is possible to sufficiently reduce the reduction in surface treatment rate such as etching and oxidation due to contaminants.

[0061]

According to the present invention, it is possible to prevent contaminants caused by a heating source from flying into a sample, and to prevent a decrease in the surface treatment rate of a sample due to contaminants.

[Brief explanation of drawings]

FIG. 1 is a cross-sectional view showing the configuration of a first embodiment of a surface treatment apparatus according to the present invention.

FIG. 2 is a diagram showing the configuration of a conventional surface treatment apparatus using a thermally excited molecular beam.

FIG. 3 is a diagram showing another configuration of a conventional surface treatment apparatus using a thermally excited molecular beam.

FIG. 4 is a diagram showing the configuration of a nozzle and sample vicinity of a surface treatment apparatus using a thermally excited molecular beam.

FIG. 5 is a cross-sectional view showing the configuration of a second embodiment of the surface treatment apparatus according to the present invention.

FIG. 6 is a diagram showing a heating means of the surface treatment apparatus according to the present invention and the configuration of its vicinity.

FIG. 7 is a diagram showing a heating means of the surface treatment apparatus according to the present invention and the configuration of its vicinity.

FIG. 8 is a cross-sectional view showing the configuration of a third embodiment of the surface treatment apparatus according to the present invention.

FIG. 9 is a diagram showing the configuration of a heating means and its vicinity in the surface treatment apparatus according to the present invention.

FIG. 10 is a cross-sectional view showing the configuration of a fourth embodiment of the surface treatment apparatus according to the present invention.

FIG. 11 is a diagram showing the configuration of a heating means and its vicinity in the surface treatment apparatus according to the present invention.

FIG. 12 is a cross-sectional view showing the configuration of a fifth embodiment of the surface treatment apparatus according to the present invention.

FIG. 13 is a cross-sectional view showing the configuration of a sixth embodiment of the surface treatment apparatus according to the present invention.

[Explanation of symbols]

1... Reaction chamber, 2... Sample, 3... Sample stage, 4... Reactive gas,
5... Nozzle, 6... Electrical resistance heating wire, 7... Side wall, 8... Partition plate, 9... Packing, 17... Furnace, 22... Electrical resistance heating wire container, 26... Electrical resistance heating wire, 27... Activation surface, 28
...Collimator, 30...Electric resistance heating wire, 31...Electric resistance heating wire cover, 37...Flexible tube.

Claims (1)

[Scope of Claims] [Claim 1] First means for supplying a reaction gas to the sample for surface treating the sample; and second means for heating the first means; third means for accommodating said second means within said first internal space; fourth means for surface treating said sample within said second internal space; a fifth means for supplying an inert gas into the internal space, and the first internal space and the second internal space are airtightly separated. . 2. The surface treatment apparatus according to claim 1, wherein the first means is a reaction gas supply pipe. 3. The surface treatment apparatus according to claim 1, wherein the fifth means is an inert gas supply pipe. 4. A first means for supplying a reaction gas to the sample for surface treatment of the sample, a second means for heating the first means, and a first internal space thereof. a third means for accommodating said second means therein; a fourth means for surface-treating said sample within said second interior space; and reducing the pressure within said second interior space. and a fifth means for the surface treatment, wherein the first internal space and the second internal space are airtightly separated. 5. The surface treatment apparatus according to claim 4, wherein the first means is a reaction gas supply pipe. 6. The surface treatment apparatus according to claim 4, wherein the fifth means is an exhaust pipe. 7. A surface treatment method comprising the following steps. (a) providing a first means for supplying a reaction gas to said sample for surface treating said sample; (b) providing a second means for heating said first means within said first interior; (c) supplying an inert gas into the first internal space; (d) preparing the sample in a second internal space that is airtightly separated from the first internal space; 8. A surface treatment method comprising the following steps: (a) providing a first means for supplying a reaction gas to said sample for surface treating said sample; (b) providing a second means for heating said first means within said first interior; (c) preparing a space; (c) reducing the pressure in the first internal space; (d) surface-treating the sample in a second internal space airtightly separated from the first internal space. Steps: 9. A method for manufacturing a semiconductor device, comprising the following steps. (a) preparing a first means for supplying a reaction gas to the semiconductor device for surface treating the semiconductor device; (b) preparing a second means for heating the first means; (c) supplying an inert gas into the first internal space; (d) in a second internal space airtightly separated from the first internal space; A step of surface treating the semiconductor device [
10. A method for manufacturing a semiconductor device, comprising the following steps. (a) preparing a first means for supplying a reaction gas to the semiconductor device for surface treating the semiconductor device; (b) preparing a second means for heating the first means; (c) preparing an internal space in the first internal space; (d) reducing the pressure in the first internal space; (d) preparing the semiconductor device in a second internal space airtightly separated from the first internal space; Surface treatment step [Claim 11]
a first means for supplying the sample with a reaction gas for surface treating the sample; a second means for heating the first means; and a second means for accommodating the second means. A first space, a second space for surface-treating the sample inside the first space, and a second space for partially communicating with the first space and the second space, and for separating other parts. a fourth means for shielding between the second means and the second space; and a fifth means for supplying an inert gas into the second internal space. A surface treatment apparatus characterized by having the following means. 12. The surface treatment apparatus according to claim 11, wherein the first means is a reaction gas supply pipe. 13. The surface treatment apparatus according to claim 11, wherein the fifth means is an inert gas supply pipe. 14. The first means extends close to the communicating portion of the third means, and the second means is disposed near an outer periphery of the first means. The surface treatment apparatus according to claim 11. 15. The surface treatment apparatus according to claim 11, wherein the third means is a partition plate. 16. A first means for supplying a reaction gas to the sample for surface treatment of the sample, a second means for heating the first means, and a second means for heating the first means. A first space for accommodating a sample, a second space for surface-treating the sample therein, a part of the first space and the second space communicating with each other, and other spaces. a third means for dividing the portion; a fourth means for shielding between the second means and the second space; and a fourth means for reducing the pressure in the second internal space. 5. A surface treatment device comprising: 17. The surface treatment apparatus according to claim 16, wherein the first means is a reaction gas supply pipe. 18. The surface treatment apparatus according to claim 16, wherein the fifth means is an exhaust pipe. 19. The first means extends close to the communicating portion of the third means, and the second means is disposed near an outer periphery of the first means. The surface treatment apparatus according to claim 16. 20. The surface treatment apparatus according to claim 16, wherein the third means is a partition plate. 21. A surface treatment method comprising the following steps. (a) providing a first means for supplying a reaction gas to said sample for surface treating said sample; (b) providing a second means for heating said first means within said first interior; Step (c) of preparing the space (c) providing third means for partially communicating the first space and the second space for surface-treating the sample and separating the other parts; (d) preparing a fourth means for shielding between the second means and the second space; (e) supplying an inert gas into the second internal space; Step (f) Surface treating the sample within the second internal space. 22. A surface treatment method comprising the following steps. (a) providing a first means for supplying a reaction gas to said sample for surface treating said sample; (b) providing a second means for heating said first means within said first interior; Step (c) of preparing the space (c) providing third means for partially communicating the first space and the second space for surface-treating the sample and separating the other parts; (d) preparing a fourth means for shielding between the second means and the second space; (e) reducing the pressure in the second internal space; (f) 23. A method for manufacturing a semiconductor device, comprising the following steps: surface-treating the sample within the second internal space. (a) preparing a first means for supplying a reaction gas to the semiconductor device for surface treating the semiconductor device; (b) preparing a second means for heating the first means; (c) providing a second space for partially communicating the first space and a second space for performing surface treatment on the semiconductor device, and for separating other parts; (d) providing a fourth means for shielding between the second means and the second space; (e) providing an inert material into the second interior space; (f) supplying gas; (f) surface-treating the semiconductor device within the second internal space; 24. A method for manufacturing a semiconductor device, comprising the following steps. (a) preparing a first means for supplying a reaction gas to the semiconductor device for surface treating the semiconductor device; (b) preparing a second means for heating the first means; (c) providing a second space for partially communicating the first space and a second space for performing surface treatment on the semiconductor device, and for separating other parts; (d) preparing a fourth means for shielding between the second means and the second space; (e) reducing the pressure in the second internal space; Step (f) surface-treating the semiconductor device within the second internal space; Claim 25: first means for supplying the sample with a reaction gas for surface-treating the sample; a second means for heating the first means; a third means for accommodating said first and second means within an interior space thereof;
and fourth means for hermetically sealing the second means. 26. The surface treatment apparatus according to claim 25, wherein the first means is a reaction gas supply pipe. 27. A surface treatment method comprising the following steps. (a) preparing a first means for supplying a reaction gas to the sample for surface treating the sample; (b) preparing a second means for heating the first means ( c) providing third means for accommodating said first and second means within said internal space; (d) hermetically sealing said second means; (e) within said internal space. A step of surface treating the sample. [Claim 28]
A method for manufacturing a semiconductor device, comprising the following steps. (a) preparing a first means for supplying a reaction gas to the semiconductor device for surface treating the semiconductor device; (b) preparing a second means for heating the first means; (c) providing a third means for accommodating said first and second means within its interior space; (d) hermetically sealing said second means; and (e) said interior space. 29. A step of surface-treating the semiconductor device within the semiconductor device. [Claim 29] A first means having a first interior space for accommodating a sample; a second means for heating the reaction gas supplied into the first interior space; and a third means for heating the reaction gas supplied into the first interior space; and a fifth means for supplying an inert gas into the second internal space, the first internal space and the second internal space. A surface treatment device characterized by being airtightly separated from the surface treatment device. 30. The surface treatment apparatus according to claim 29, wherein the third means is a heating plate. 31. The surface treatment apparatus according to claim 29, wherein a collimator is housed in the first internal space. 32. The surface treatment apparatus according to claim 29, wherein the second means is a reaction gas supply pipe. 33. The surface treatment apparatus according to claim 29, wherein the fifth means is an inert gas supply pipe. 34. A first means having a first internal space for accommodating a sample; a second means for heating a reaction gas for surface treating the sample; and the second means. a fourth means for supplying an inert gas into the second internal space; and an active surface of the third means; a third internal space formed by a collimator, communicated with the first internal space via the collimator, and airtightly separated from the second internal space; and fifth means for supplying into the interior space. 35. The surface treatment apparatus according to claim 34, wherein the third means is a heating plate. 36. The surface treatment apparatus according to claim 34, wherein the fourth means is an inert gas supply pipe. 37. The surface treatment apparatus according to claim 34, wherein the fifth means is a reaction gas supply pipe. 38. A first means having a first internal space for accommodating a sample; and a second means for supplying a reaction gas into the first internal space for surface treating the sample. means, third means for heating said reaction gas supplied within said first interior space, and fourth means for accommodating said third means within said second interior space. and a fifth means for reducing the pressure in the second internal space, and the first internal space and the second internal space are airtightly separated. Surface treatment equipment. 39. The surface treatment apparatus according to claim 38, wherein said third means is a heating plate. 40. The surface treatment apparatus according to claim 38, wherein a collimator is housed in the first internal space. 41. The surface treatment apparatus according to claim 38, wherein the second means is a reaction gas supply pipe. 42. The surface treatment apparatus according to claim 38, wherein the fifth means is an exhaust pipe. 43. A first means having a first internal space for accommodating a sample; a second means for heating a reaction gas for surface treating the sample; and the second means. a third means for accommodating in a second internal space, a fourth means for reducing the pressure in the second internal space, and an active surface and a collimator, which the third means has. a third internal space communicated with the first internal space via the collimator and airtightly separated from the second internal space; and the reactant gas is introduced into the third internal space. and a fifth means for supplying a surface. 44. The surface treatment apparatus according to claim 43, wherein the third means is a heating plate. 45. The surface treatment apparatus according to claim 43, wherein the fourth means is an exhaust pipe. 46. The surface treatment apparatus according to claim 43, wherein the fifth means is a reaction gas supply pipe. 47. A first means for supplying a reaction gas to the sample for surface treatment of the sample, a second means for heating the first means, and a first internal space thereof. third means for accommodating said second means within said second interior space; fourth means for surface treating said sample within said second interior space; a fifth means for supplying gas, and the first internal space and the second internal space are airtightly separated. 48. The surface treatment apparatus according to claim 47, wherein a collimator is housed in the second internal space. 49. The surface treatment apparatus according to claim 47, wherein the first means is a reaction gas supply pipe. 50. The surface treatment apparatus according to claim 47, wherein the fifth means is an inert gas supply pipe. 51. A first means for supplying a reaction gas to the sample for surface treatment of the sample, a second means for heating the first means, and a first internal space thereof. a third means for accommodating said second means within said second interior space, a fourth means for surface treating said sample within said second interior space, and reducing the pressure within said first interior space. and a fifth means for the surface treatment, wherein the first internal space and the second internal space are airtightly separated. 52. The surface treatment apparatus according to claim 51, wherein a collimator is housed in the second internal space. 53. The surface treatment apparatus according to claim 51, wherein the first means is a reaction gas supply pipe. 54. The surface treatment apparatus according to claim 51, wherein the fifth means is an exhaust pipe.