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JPH04357823A - Heat treating apparatus - Google Patents

Heat treating apparatus

Info

Publication number
JPH04357823A
JPH04357823A JP16000591A JP16000591A JPH04357823A JP H04357823 A JPH04357823 A JP H04357823A JP 16000591 A JP16000591 A JP 16000591A JP 16000591 A JP16000591 A JP 16000591A JP H04357823 A JPH04357823 A JP H04357823A
Authority
JP
Japan
Prior art keywords
glass substrate
plate
heating section
stage
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16000591A
Other languages
Japanese (ja)
Other versions
JP3266287B2 (en
Inventor
Hirohito Sago
宏仁 佐合
Katsuhiko Kudo
工藤 勝彦
Hirotsugu Kumazawa
博嗣 熊澤
Shigemi Fujiyama
藤山 重美
Kazuyuki Kawakami
和志 川上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Tatsumo KK
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Tatsumo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd, Tatsumo KK filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP16000591A priority Critical patent/JP3266287B2/en
Publication of JPH04357823A publication Critical patent/JPH04357823A/en
Application granted granted Critical
Publication of JP3266287B2 publication Critical patent/JP3266287B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To obtain a compact entire line associated with an apparatus for heat-treating a glass substrate, etc. CONSTITUTION:In a heat-treating apparatus 5, a heater 10 is disposed at a center, and a rising/falling mechanism 20 and a handier unit 30 are disposed at an upstream side of the heater 10. In the heater 10, a case 11 of a box state are divided into a plurality of stages, hot plates 12,... are disposed from the top to a third stage from the top, and a cooling plate 13 is disposed in a lowermost stage as a cooler 14. A delivery unit 50 for delivering a glass substrate W is provided between the unit 30 and the plate 12 in each stage of the heater 10.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は例えばガラス基板表面に
塗布した塗布液を乾燥せしめた後に加熱して被膜を形成
する加熱処理装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment apparatus for forming a film by heating a coating solution applied to the surface of a glass substrate, for example, after drying it.

【0002】0002

【従来の技術】液晶ディスプレイ(LCD)を連続して
効率よく製造する装置を本出願人は特願平2−9168
4号として先に提案した。この装置は上流部にガラス基
板の投入部を設け、この投入部の下流側に順次塗布装置
、減圧乾燥装置、ガラス基板の裏面洗浄装置及び加熱部
を配置した構成としている。
[Prior Art] The present applicant has proposed an apparatus for continuously and efficiently manufacturing liquid crystal displays (LCDs) in Japanese Patent Application No. 2-9168.
I proposed it as No. 4 earlier. This apparatus has a structure in which a glass substrate input section is provided in the upstream section, and a coating device, a vacuum drying device, a backside cleaning device for glass substrates, and a heating section are sequentially arranged downstream of this input section.

【0003】そして、加熱部における処理時間は他のス
テーションにおける処理よりも長時間を要するため、加
熱部には搬送方向に沿って複数のホットプレートを配置
し、クランク動をなす搬送装置でガラス基板を順に複数
のホットプレート上を移載することで他のステーション
における処理時間と合わせている。
Since the processing time in the heating section is longer than the processing time at other stations, a plurality of hot plates are arranged in the heating section along the conveying direction, and a crank-like conveying device is used to transfer the glass substrates. By sequentially transferring the hot plates onto multiple hot plates, the processing time at other stations can be matched.

【0004】0004

【発明が解決しようとする課題】上述したように、処理
時間を合わせて時間的な効率を向上するために複数のホ
ットプレートを搬送方向に配列すると、装置全体が大型
化し、スペース的に不利が生じる。
[Problems to be Solved by the Invention] As mentioned above, when a plurality of hot plates are arranged in the conveyance direction in order to improve time efficiency by combining processing times, the entire apparatus becomes large and there is a disadvantage in terms of space. arise.

【0005】[0005]

【課題を解決するための手段】上記課題を解決すべく本
発明は、複数のホットプレートを搬送方向に配列する代
わりに、複数のホットプレートを上下方向に配列した。
[Means for Solving the Problems] In order to solve the above problems, the present invention arranges a plurality of hot plates in the vertical direction instead of arranging the plurality of hot plates in the conveyance direction.

【0006】[0006]

【作用】加熱部まで搬送されてきた板状被処理物はハン
ドラーユニットにより、上下方向に配列された複数のホ
ットプレートのいずれかの上方に送り込まれて加熱処理
され、加熱処理が終了したら、再びハンドラーユニット
にて取り出され冷却部等に送り込まれる。
[Operation] The plate-shaped workpiece that has been conveyed to the heating section is sent by the handler unit above one of the plurality of hot plates arranged in the vertical direction and is heated, and when the heating treatment is completed, it is heated again. It is taken out by the handler unit and sent to a cooling section, etc.

【0007】[0007]

【実施例】以下に本発明の実施例を添付図面に基づいて
説明する。ここで、図1は本発明に係る加熱処理装置を
組み込んだ被膜形成ラインの平面図、図2は同加熱処理
装置の正面図、図3は図2のA−A方向矢視図、図4は
図2のB−B方向矢視図、図5は図2のC−C方向矢視
図である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Examples of the present invention will be described below with reference to the accompanying drawings. Here, FIG. 1 is a plan view of a film forming line incorporating a heat treatment apparatus according to the present invention, FIG. 2 is a front view of the same heat treatment apparatus, FIG. 3 is a view taken along arrow A-A in FIG. 2, and FIG. 2 is a view taken along the line B--B in FIG. 2, and FIG. 5 is a view taken along the line C--C in FIG.

【0008】被膜形成ラインは図1の左側を上流部とし
、この上流部に矩形状をなす板状被処理物としてのガラ
ス基板Wの投入部1を設け、この投入部1の下流側に塗
布装置2を配置し、この塗布装置2の下流側に減圧乾燥
装置3、ガラス基板Wの裏面洗浄装置4及び本発明に係
る加熱処理装置5を配置している。そして、投入部1か
ら加熱処理装置5に至るまでは搬送装置6によってガラ
ス基板Wの下面を支持した状態で搬送するようにしてい
る。
The film forming line has an upstream section on the left side of FIG. 1, an input section 1 for a rectangular glass substrate W as a plate-shaped object to be processed, and a coating section 1 on the downstream side of this input section 1. A device 2 is disposed, and a reduced pressure drying device 3, a backside cleaning device 4 for glass substrates W, and a heat treatment device 5 according to the present invention are disposed downstream of this coating device 2. From the input section 1 to the heat treatment device 5, the glass substrate W is transported with the lower surface of the glass substrate W supported by a transport device 6.

【0009】加熱処理装置5は図2乃至図5に示すよう
に、中央を加熱部10とし、この加熱部10の上流側に
昇降機構20とハンドラーユニット30を配置し、下流
側にはガラス基板Wの下面を支持した状態で払い出す搬
送装置40を設けている。
As shown in FIGS. 2 to 5, the heat treatment apparatus 5 has a heating section 10 in the center, an elevating mechanism 20 and a handler unit 30 arranged upstream of this heating section 10, and a glass substrate disposed downstream. A conveyance device 40 is provided that delivers the W while supporting the lower surface thereof.

【0010】加熱部10はボックス状をなすケース11
内を複数段(図示例では四段)に区画し、上から三段ま
でにはホットプレート12…を配置し、最下段にはクー
リングプレート13を配置した冷却部14としている。
The heating section 10 has a box-shaped case 11.
The interior is divided into multiple stages (four stages in the illustrated example), with hot plates 12 arranged in the top three stages, and a cooling section 14 with a cooling plate 13 arranged in the lowest stage.

【0011】また加熱部10の各段内には前記ハンドラ
ーユニット30とホットプレート12との間でガラス基
板Wを受け渡し受け渡しユニット50を設けている。こ
の受け渡しユニット50はケース11の背面に図4及び
図5に示すようにパルスモータ51…を固着し、このパ
ルスモータ51にて回転せしめられるボールネジ52に
プレート53の基部を螺合し、プレート53にH状をな
すようにバー54,54を取り付け、このバー54に前
記ホットプレート12に形成した穴に下方から貫通する
ピン55を固着している。
Further, a delivery unit 50 is provided in each stage of the heating section 10 to deliver the glass substrate W between the handler unit 30 and the hot plate 12. This delivery unit 50 has a pulse motor 51 fixed to the back of the case 11 as shown in FIGS. Bars 54, 54 are attached so as to form an H shape, and a pin 55 is fixed to the bar 54, passing through the hole formed in the hot plate 12 from below.

【0012】而して、パルスモータ51を駆動すること
でピン55は上下動し、ホットプレート12に形成した
穴からその先端が出没する。つまりピン55が上昇する
ことでホットプレート12上に載置されていたガラス基
板Wが持ち上げられ、下降することでガラス基板Wがホ
ットプレート12上に載置される。特にガラス基板Wを
ホットプレート12上に載置するにあたり、ガラス基板
Wがホットプレート12に接触する直前で一旦パルスモ
ータ51を停止する等の操作を行うことで、ガラス基板
Wの加熱速度をコントロールすることができ、最適な加
熱条件を設定することが可能となる。
By driving the pulse motor 51, the pin 55 moves up and down, and its tip emerges and retracts from the hole formed in the hot plate 12. That is, when the pins 55 rise, the glass substrate W placed on the hot plate 12 is lifted, and when the pins 55 fall, the glass substrate W is placed on the hot plate 12. In particular, when placing the glass substrate W on the hot plate 12, the heating speed of the glass substrate W is controlled by temporarily stopping the pulse motor 51 just before the glass substrate W contacts the hot plate 12. This makes it possible to set optimal heating conditions.

【0013】また冷却部14にもハンドラーユニット3
0とクーリングプレート13との間でガラス基板Wを受
け渡し受け渡しユニット56を設けているが、この受け
渡しユニット56は基台上面に取り付けたパルスモータ
57にてピン58を昇降動せしめるようにしている。
[0013] Also, a handler unit 3 is installed in the cooling section 14.
A transfer unit 56 is provided to transfer the glass substrate W between the glass substrate 0 and the cooling plate 13, and the transfer unit 56 moves pins 58 up and down using a pulse motor 57 attached to the top surface of the base.

【0014】一方、昇降機構20はモータ21にて回転
せしめられる上下方向のボールネジ22にスライダ23
のナット部を螺合し、このスライダ23の上端に昇降プ
レート24を取り付け、更に昇降プレート24上に平行
な一対のボールネジ25,26を配置し、これらボール
ネジ25,26に前記ハンドラーユニット30を支持せ
しめている。
On the other hand, the elevating mechanism 20 includes a slider 23 mounted on a vertical ball screw 22 rotated by a motor 21.
A lifting plate 24 is attached to the upper end of the slider 23, and a pair of parallel ball screws 25 and 26 are arranged on the lifting plate 24, and the handler unit 30 is supported on these ball screws 25 and 26. It's forcing me.

【0015】即ちハンドラーユニット30は上下一対の
アーム31,32からなり、それぞれのアーム31,3
2がナット部材31a,32aを介して前記ボールネジ
25,26に螺合し、ボールネジ25,26を個別に回
転せしめることで独立して加熱部10に対して進退動を
なすようにしている。
That is, the handler unit 30 consists of a pair of upper and lower arms 31, 32, each of which has a
2 are screwed into the ball screws 25 and 26 via nut members 31a and 32a, and by rotating the ball screws 25 and 26 individually, they can independently move forward and backward relative to the heating section 10.

【0016】尚、アーム31,32はケース11の側面
に形成した開口11a…を介して加熱部10の各段に出
入りし、またアーム31,32の上面にはテフロン製の
パッド33を貼着している。
The arms 31 and 32 enter and leave each stage of the heating section 10 through openings 11a formed on the side surface of the case 11, and Teflon pads 33 are attached to the upper surfaces of the arms 31 and 32. are doing.

【0017】以上において、投入部1にセットされたガ
ラス基板Wは搬送装置6により塗布装置2に送られ、こ
の塗布装置2においてノズル2aからガラス基板W上に
塗布液を滴下し、次いでスピンナを回転し遠心力でガラ
ス基板W上面に塗布液を均一に拡散せしめ、この後減圧
乾燥装置3及び裏面洗浄装置4を経てガラス基板Wを加
熱処理装置5の下方位置で待機していたハンドラーユニ
ット30のアーム31上に載置する。
In the above, the glass substrate W set in the input section 1 is sent to the coating device 2 by the conveyance device 6, and in this coating device 2, the coating liquid is dropped onto the glass substrate W from the nozzle 2a, and then the spinner is applied. The handler unit 30 rotates and uses centrifugal force to uniformly spread the coating liquid onto the upper surface of the glass substrate W, and then passes through the vacuum drying device 3 and the backside cleaning device 4 to the glass substrate W, which is waiting at a position below the heat treatment device 5. It is placed on the arm 31 of.

【0018】次いで、昇降機構20にてハンドラーユニ
ット30を加熱部10の所定の段の高さまで上昇せしめ
、更にボールネジ25を回転せしめてガラス基板Wを載
置したアーム31を開口11aを介して所定の段のホッ
トプレート12上方に臨ませる。
Next, the handler unit 30 is raised to the height of a predetermined step of the heating section 10 by the lifting mechanism 20, and the ball screw 25 is further rotated to move the arm 31 on which the glass substrate W is placed to a predetermined height through the opening 11a. It faces above the hot plate 12 on the tier.

【0019】そして、受け渡しユニット50のパルスモ
ータ51を駆動してピン55をホットプレート12を貫
通して上昇させ、ピン55の先端にてガラス基板Wを受
け取る。
Then, the pulse motor 51 of the transfer unit 50 is driven to raise the pin 55 through the hot plate 12, and the glass substrate W is received at the tip of the pin 55.

【0020】而る後、アーム31を加熱部10外に引き
出し、パルスモータ51を逆方向に回転してピン55を
下降させ、ホットプレート12上にガラス基板Wを載置
する。この際、載置直前にパルスモータを停止する等の
操作で所定の加熱条件を設定できるのは前記した通りで
ある。
Thereafter, the arm 31 is pulled out of the heating section 10, the pulse motor 51 is rotated in the opposite direction to lower the pin 55, and the glass substrate W is placed on the hot plate 12. At this time, as described above, predetermined heating conditions can be set by operations such as stopping the pulse motor immediately before placement.

【0021】このようにして、加熱部10の各段にガラ
ス基板Wを投入するために、ハンドラーユニット30は
昇降機構20によって上下動を繰り返すわけであるが、
下降する際には加熱処理が終了したガラス基板Wをアー
ム32上に載置して下降してくる。
In this way, in order to load the glass substrates W into each stage of the heating section 10, the handler unit 30 repeatedly moves up and down by the lifting mechanism 20.
When descending, the glass substrate W that has been heated is placed on the arm 32 and descends.

【0022】即ち、最初にガラス基板Wを投入する場合
を除いて、加熱部10の各段には既に前に投入したガラ
ス基板Wが入っているので、未処理のガラス基板Wを載
置しているアーム31を加熱部10内に挿入する前に、
予め受け渡しユニット50にて処理後のガラス基板Wを
ホットプレート12から持ち上げておき、この持ち上げ
られたガラス基板Wの下に空のアーム32を臨ませ、ア
ーム32上に処理後のガラス基板Wを載置し、加熱部1
0外に処理後のガラス基板Wを引き出した後に未処理の
ガラス基板Wを載置したアーム31を加熱部10内に挿
入する。
That is, except when a glass substrate W is first loaded, each stage of the heating section 10 already contains a previously loaded glass substrate W, so no untreated glass substrate W can be loaded. Before inserting the arm 31 into the heating section 10,
The processed glass substrate W is lifted from the hot plate 12 in advance by the transfer unit 50, the empty arm 32 is placed under the lifted glass substrate W, and the processed glass substrate W is placed on the arm 32. Place it on the heating section 1
After the treated glass substrate W is pulled out, the arm 31 on which the untreated glass substrate W is placed is inserted into the heating section 10.

【0023】そして、処理後のガラス基板Wを載置した
アーム32と、加熱部10に未処理のガラス基板Wを送
り込んで空になったアーム31は一体的に下降し、アー
ム31には新たなガラス基板Wが載せられ、アーム32
は更に前進して冷却部14のクーリングプレート13上
に処理後のガラス基板Wを受け渡しユニット56を介し
て移載する。
Then, the arm 32 on which the processed glass substrate W is placed and the arm 31 that is empty after feeding the unprocessed glass substrate W into the heating section 10 are lowered together, and the arm 31 is loaded with a new one. A glass substrate W is placed on the arm 32.
further advances and transfers the processed glass substrate W onto the cooling plate 13 of the cooling section 14 via the transfer unit 56.

【0024】尚、実施例にあっては加熱部の各段をそれ
ぞれ個別の加熱部として作用するようにしたが、例えば
最上段のホットプレートで予備の加熱処理を行い、この
後更に下方のホットプレートで加熱処理する等の使用方
法は任意である。また冷却部の位置も任意であり、例え
ば最上段にクーリングプレートを配置してもよい。
In the embodiment, each stage of the heating section functions as an individual heating section. The method of use, such as heat treatment with a plate, is arbitrary. Further, the position of the cooling unit is also arbitrary; for example, the cooling plate may be placed at the top.

【0025】[0025]

【発明の効果】以上に説明したように本発明によれば、
ガラス基板等の板状被処理物を加熱処理する装置の加熱
部を、上下方向に複数段にし、各段にホットプレートを
設けるとともに各段にハンドラーユニットによって板状
被処理物を出し入れ可能としたので、例えば加熱処理装
置を組み込んだ被膜形成ラインの全長を時間的効率を低
下させることなく短くできる。
[Effects of the Invention] As explained above, according to the present invention,
The heating section of the device that heat-processes plate-shaped objects such as glass substrates has multiple levels in the vertical direction, and each level is equipped with a hot plate, and a handler unit at each level allows the plate-shaped objects to be taken in and out. Therefore, for example, the total length of a film forming line incorporating a heat treatment device can be shortened without reducing time efficiency.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本発明に係る加熱処理装置を組み込んだ被膜形
成ラインの平面図
[Fig. 1] A plan view of a film forming line incorporating a heat treatment apparatus according to the present invention.

【図2】同加熱処理装置の正面図[Figure 2] Front view of the heat treatment equipment

【図3】図2のA−A方向矢視図[Figure 3] A-A direction arrow view in Figure 2

【図4】図2のB−B方向矢視図[Fig. 4] B-B direction arrow view in Fig. 2

【図5】図2のC−C方向矢視図[Fig. 5] C-C direction arrow view in Fig. 2

【符号の説明】[Explanation of symbols]

2…塗布装置、5…加熱処理装置、10…加熱部、12
…ホットプレート、13…クーリングプレート、14…
冷却部、20…昇降機構、30…ハンドラーユニット、
50,56…受け渡しユニット、51,57…パルスモ
ータ、55,58…ピン、W…板状被処理物。
2... Coating device, 5... Heat treatment device, 10... Heating section, 12
...Hot plate, 13...Cooling plate, 14...
Cooling unit, 20... Lifting mechanism, 30... Handler unit,
50, 56... Delivery unit, 51, 57... Pulse motor, 55, 58... Pin, W... Plate-shaped processed object.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】  板状被処理物を所定時間加熱した後に
搬出する加熱処理装置において、この加熱処理装置は上
下方向に複数段のホットプレートを備えた加熱部を設け
、また加熱部に沿って昇降機構を配置し、この昇降機構
に加熱部の各段内に出入り可能なハンドラーユニットを
取り付け、更に加熱部の各段内には前記ハンドラーユニ
ットとホットプレートとの間で板状被処理物を受け渡し
受け渡しユニットを設けたことを特徴とする加熱処理装
置。
Claim 1: A heat treatment apparatus that heats a plate-shaped workpiece for a predetermined period of time and then carries it out. A lifting mechanism is arranged, and a handler unit that can go in and out of each stage of the heating section is attached to this lifting mechanism, and a plate-shaped workpiece is placed between the handler unit and the hot plate in each stage of the heating section. A heat treatment device characterized by being provided with a delivery and delivery unit.
【請求項2】  前記加熱部の最下段のホットプレート
の下方にクーリングプレートを備えた冷却部を設け、ま
た前記ハンドラーユニットは独立して進退動する一対の
アームからなり、一方のアームは未処理の板状被処理物
を加熱部の各段内に送り込み、他方のアームは処理後の
板状被処理物を加熱部の各段から取り出すとともに冷却
部内に送り込むようにしたことを特徴とする請求項1に
記載の加熱処理装置。
2. A cooling section equipped with a cooling plate is provided below the lowest hot plate of the heating section, and the handler unit is composed of a pair of arms that move forward and backward independently, one arm being untreated. A claim characterized in that the plate-shaped workpiece is fed into each stage of the heating section, and the other arm takes out the plate-like workpiece after processing from each stage of the heating section and sends it into the cooling section. Item 1. The heat treatment apparatus according to item 1.
JP16000591A 1991-06-03 1991-06-03 Heat treatment equipment Expired - Fee Related JP3266287B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16000591A JP3266287B2 (en) 1991-06-03 1991-06-03 Heat treatment equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16000591A JP3266287B2 (en) 1991-06-03 1991-06-03 Heat treatment equipment

Publications (2)

Publication Number Publication Date
JPH04357823A true JPH04357823A (en) 1992-12-10
JP3266287B2 JP3266287B2 (en) 2002-03-18

Family

ID=15705922

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16000591A Expired - Fee Related JP3266287B2 (en) 1991-06-03 1991-06-03 Heat treatment equipment

Country Status (1)

Country Link
JP (1) JP3266287B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07161632A (en) * 1993-07-16 1995-06-23 Semiconductor Syst Inc Heat treatment module for substrate coating / developing system
WO2001059831A3 (en) * 2000-02-07 2002-04-04 Therma Wave Inc Method and apparatus for preparing semiconductor wafers for measurement
US6861619B1 (en) 2000-02-07 2005-03-01 Therma-Wave, Inc. Method and apparatus for preparing semiconductor wafers for measurement

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07161632A (en) * 1993-07-16 1995-06-23 Semiconductor Syst Inc Heat treatment module for substrate coating / developing system
US5935768A (en) * 1993-07-16 1999-08-10 Semiconductor Systems, Inc. Method of processing a substrate in a photolithography system utilizing a thermal process module
WO2001059831A3 (en) * 2000-02-07 2002-04-04 Therma Wave Inc Method and apparatus for preparing semiconductor wafers for measurement
US6624393B2 (en) 2000-02-07 2003-09-23 Therma-Wave, Inc. Method and apparatus for preparing semiconductor wafers for measurement
US6861619B1 (en) 2000-02-07 2005-03-01 Therma-Wave, Inc. Method and apparatus for preparing semiconductor wafers for measurement

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