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JPH04324820A - Active matrix type liquid crystal display device - Google Patents

Active matrix type liquid crystal display device

Info

Publication number
JPH04324820A
JPH04324820A JP9576691A JP9576691A JPH04324820A JP H04324820 A JPH04324820 A JP H04324820A JP 9576691 A JP9576691 A JP 9576691A JP 9576691 A JP9576691 A JP 9576691A JP H04324820 A JPH04324820 A JP H04324820A
Authority
JP
Japan
Prior art keywords
liquid crystal
pixel electrode
insulating film
crystal display
display device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9576691A
Other languages
Japanese (ja)
Inventor
Hiroshige Narita
成田 太成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP9576691A priority Critical patent/JPH04324820A/en
Publication of JPH04324820A publication Critical patent/JPH04324820A/en
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明はアクティブマトリクス型
液晶表示装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix liquid crystal display device.

【0002】0002

【従来の技術】従来のアクティブマトリクス型液晶表示
装置において表示領域における画素電極と他のスイッチ
ング素子や配線との凹凸については考慮されておらず、
画素電極の下部だけに限定した絶縁膜の敷設は行なわれ
ていない。
BACKGROUND OF THE INVENTION In conventional active matrix liquid crystal display devices, unevenness between pixel electrodes and other switching elements and wiring in the display area is not taken into consideration.
The insulating film is not formed only under the pixel electrode.

【0003】0003

【発明が解決しようとする課題】前記従来技術において
は、画素電極が隣接するスイッチング素子や配線よりも
凹の構造であるので、機械的に基板を擦ることにより液
晶の配向処理をおこなうラビング工程において他の素子
や配線が画素電極上のラビングの障害となり、画素電極
上の液晶の配向力低下を招き、表示異常が発生するとい
う課題がある。
[Problems to be Solved by the Invention] In the above-mentioned prior art, since the pixel electrode has a concave structure than the adjacent switching elements and wiring, the rubbing process for aligning the liquid crystal by mechanically rubbing the substrate is difficult. There is a problem in that other elements and wiring become obstacles to rubbing on the pixel electrode, leading to a decrease in the alignment force of the liquid crystal on the pixel electrode, and display abnormalities occur.

【0004】また、前記課題である表示異常の発生は、
画素を高密度化すればするほど顕著となる。なぜならば
同一の設計ルールを使用する限りにおいては、画素を高
密度化して画素ピッチを微細化しても素子や配線の面積
は変わらず画素電極面積は減少して画素電極に対する他
の素子や配線の占める面積が相対的に増加することにな
るからである。
[0004] Furthermore, the occurrence of the display abnormality, which is the problem mentioned above, is caused by
The higher the pixel density, the more noticeable this becomes. This is because, as long as the same design rules are used, even if the pixel density is increased and the pixel pitch is made finer, the area of the elements and wiring remains the same, and the area of the pixel electrode decreases. This is because the area occupied will be relatively increased.

【0005】[0005]

【課題を解決するための手段】画素電極が他の素子や配
線よりも凹であることを回避するために、画素電極の下
部に絶縁膜を敷設し、画素電極が他の素子や配線より凸
もしくは同じ高さとなる構造が得られる。
[Means for solving the problem] In order to avoid the pixel electrode from being more concave than other elements and wiring, an insulating film is laid under the pixel electrode so that the pixel electrode is more concave than other elements and wiring. Alternatively, structures with the same height can be obtained.

【0006】また、前記絶縁膜を素子や配線などの層間
絶縁膜と同一工程で形成することで、余分な製造工程の
増加をもたらさずに画素電極下部に絶縁膜敷設すること
も可能となる。
Furthermore, by forming the insulating film in the same process as an interlayer insulating film for elements, wiring, etc., it is possible to form the insulating film under the pixel electrode without adding extra manufacturing steps.

【0007】[0007]

【実施例】以下に本発明の一実施例を図面に基づいて説
明する。本説明では、簡略のため配線と画素電極の関係
だけに着目し言及を与える。図1は実施例の簡略な断面
図である。図面中、1は配線、2は画素電極、3は絶縁
基板および下層である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. In this description, for the sake of brevity, only the relationship between wiring and pixel electrodes will be focused and mentioned. FIG. 1 is a simplified cross-sectional view of the embodiment. In the drawings, 1 is a wiring, 2 is a pixel electrode, and 3 is an insulating substrate and a lower layer.

【0008】図1において、絶縁基板上に配線1と画素
電極2以外の層およびパターン3形成後、絶縁膜4を画
素電極2の下部に敷設する形で形成後、画素電極2およ
び配線1を形成する。したがって絶縁膜4の厚さを変え
ることにより、表示領域内における表面の凹凸を制御す
ることが可能となる。また、液晶表示装置が透過型の場
合、絶縁膜4も透明な材料を使用しなければならない。 例えば、パターニング性に優れた感光性透明ポリイミド
などの使用が有効である。また、同一基板上に駆動回路
を形成するドライバー内蔵型液晶表示装置などの場合、
画素ピッチが微小化したとき、多層配線の必要性が大き
くなる。このような多層配線の層間絶縁膜と画素電極2
の下部に敷設する絶縁膜4と同一材料で同一工程で形成
を行なえば、余分な製造工程の増加をもたらすことがな
くなり、工程が簡便となり量産性の向上が期待される。
In FIG. 1, after the wiring 1 and layers other than the pixel electrode 2 and the pattern 3 are formed on the insulating substrate, the insulating film 4 is formed under the pixel electrode 2, and then the pixel electrode 2 and the wiring 1 are formed. Form. Therefore, by changing the thickness of the insulating film 4, it is possible to control surface irregularities within the display area. Furthermore, if the liquid crystal display device is of a transmission type, the insulating film 4 must also be made of a transparent material. For example, it is effective to use photosensitive transparent polyimide, which has excellent patterning properties. In addition, in the case of driver-built-in liquid crystal display devices where the drive circuit is formed on the same substrate,
As the pixel pitch becomes smaller, the need for multilayer wiring increases. The interlayer insulating film and pixel electrode 2 of such multilayer wiring
If the insulating film 4 is formed from the same material and in the same process as the insulating film 4 laid under the insulating film 4, no additional manufacturing steps will be required, the process will be simplified, and mass productivity will be improved.

【0009】図2は従来の簡略な断面図である。図2に
おいて配線1と画素電極2の厚さが違うため表示領域内
に表面の凹凸が存在する。なぜならば、配線1は表示上
の左右ムラや上下ムラの発生を防ぐために、抵抗を下げ
なくてはならず、厚くなる方向に向かう。しかしながら
画素電極2の方は製造プロセス上の制約を受け薄くする
必要がある。例えば画素電極に酸化インジウムスズなど
を使用した場合、厚くすると透過率が減少したり、フォ
トリソグラフィー工程においてサイドエッチングが大き
くなるなどの不具合の発生があるので、厚くするのは困
難である。このように表示領域内の表面の凹凸が存在す
ると、機械的に基板を擦ることにより液晶の配向処理を
行うラビング工程において凸の部分である配線1が凹で
ある画素電極上のラビングの障害となり、液晶の配向力
低下を招き表示異常が発生する。したがって画素電極2
の下部に絶縁膜4を敷設して表面を平坦化することによ
り、表示に寄与する画素電極2上のラビングの障害を排
除できる。よって良好な配向が得られる。
FIG. 2 is a simplified cross-sectional view of a conventional device. In FIG. 2, since the wiring 1 and the pixel electrode 2 have different thicknesses, surface irregularities exist within the display area. This is because the resistance of the wiring 1 must be lowered in order to prevent horizontal and vertical unevenness in the display, and the wiring 1 tends to become thicker. However, the pixel electrode 2 needs to be made thin due to restrictions in the manufacturing process. For example, when indium tin oxide or the like is used for the pixel electrode, it is difficult to increase the thickness because problems such as a decrease in transmittance and increased side etching during the photolithography process occur. If surface irregularities exist in the display area in this way, the wiring 1, which is a convex part, becomes an obstacle to rubbing on the pixel electrode, which is a concave part, in the rubbing process that aligns the liquid crystal by mechanically rubbing the substrate. , the alignment force of the liquid crystal decreases and display abnormalities occur. Therefore, pixel electrode 2
By laying the insulating film 4 under the pixel electrode 4 to flatten the surface, it is possible to eliminate the problem of rubbing on the pixel electrode 2 that contributes to display. Therefore, good orientation can be obtained.

【0010】0010

【発明の効果】アクティブマトリクス型液晶表示装置に
おいて、画素電極の下部に絶縁膜を敷設し、表示領域内
の凹凸を補正し平坦化することにより、画素電極上のラ
ビングの障害を排除することができ、良好な配向が得ら
れるアクティブマトリクス型液晶表示装置を供給する。
[Effects of the Invention] In an active matrix type liquid crystal display device, by laying an insulating film under the pixel electrode and correcting and flattening the unevenness in the display area, it is possible to eliminate problems caused by rubbing on the pixel electrode. The present invention provides an active matrix liquid crystal display device that can achieve good alignment.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本発明の一実施例の簡略な主要断面図である。FIG. 1 is a simplified main cross-sectional view of an embodiment of the invention.

【図2】従来例の簡略な主要断面図である。FIG. 2 is a simplified main cross-sectional view of a conventional example.

【符号の説明】[Explanation of symbols]

1  配線 2  画素電極 3  1、2以外の層およびパターンおよび絶縁基板4
  絶縁膜
1 Wiring 2 Pixel electrode 3 Layers and patterns other than 1 and 2 and insulating substrate 4
Insulating film

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】絶縁基板上に複数の走査線と信号線および
前記走査線と信号線の交点に配設させたスイッチング素
子と画素電極とを具備し、液晶を駆動することにより表
示を行うアクティブマトリクス型液晶表示装置において
、前記画素電極の下部に絶縁膜を敷設し表示領域内表面
を平坦化する構造を特徴とするアクティブマトリクス型
液晶表示装置。
1. An active device comprising, on an insulating substrate, a plurality of scanning lines and signal lines, and switching elements and pixel electrodes disposed at intersections of the scanning lines and the signal lines, and which displays by driving a liquid crystal. An active matrix liquid crystal display device characterized by a structure in which an insulating film is provided under the pixel electrode to flatten the inner surface of the display area.
【請求項2】画素電極の下部に敷設する前記絶縁膜を素
子や配線などの層間絶縁膜と同一工程で形成することを
特徴とする請求項1記載のアクティブマトリクス型液晶
表示装置。
2. The active matrix liquid crystal display device according to claim 1, wherein the insulating film laid under the pixel electrode is formed in the same process as an interlayer insulating film for elements, wiring, etc.
JP9576691A 1991-04-25 1991-04-25 Active matrix type liquid crystal display device Pending JPH04324820A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9576691A JPH04324820A (en) 1991-04-25 1991-04-25 Active matrix type liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9576691A JPH04324820A (en) 1991-04-25 1991-04-25 Active matrix type liquid crystal display device

Publications (1)

Publication Number Publication Date
JPH04324820A true JPH04324820A (en) 1992-11-13

Family

ID=14146611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9576691A Pending JPH04324820A (en) 1991-04-25 1991-04-25 Active matrix type liquid crystal display device

Country Status (1)

Country Link
JP (1) JPH04324820A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6621544B2 (en) 2000-10-20 2003-09-16 Sharp Kabushiki Kaisha Liquid crystal display apparatus and projection-type liquid crystal display apparatus
US6628350B1 (en) 1999-08-30 2003-09-30 Sharp Kabushiki Kaisha Liquid crystal display device and method of producing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6628350B1 (en) 1999-08-30 2003-09-30 Sharp Kabushiki Kaisha Liquid crystal display device and method of producing the same
US6621544B2 (en) 2000-10-20 2003-09-16 Sharp Kabushiki Kaisha Liquid crystal display apparatus and projection-type liquid crystal display apparatus

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