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JPH04312935A - Composite adhesive sheet agent and die bonding method using it - Google Patents

Composite adhesive sheet agent and die bonding method using it

Info

Publication number
JPH04312935A
JPH04312935A JP3065997A JP6599791A JPH04312935A JP H04312935 A JPH04312935 A JP H04312935A JP 3065997 A JP3065997 A JP 3065997A JP 6599791 A JP6599791 A JP 6599791A JP H04312935 A JPH04312935 A JP H04312935A
Authority
JP
Japan
Prior art keywords
semiconductor chip
composite adhesive
sheet
thermoplastic resin
die bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3065997A
Other languages
Japanese (ja)
Inventor
Naoto Ueda
直人 上田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3065997A priority Critical patent/JPH04312935A/en
Publication of JPH04312935A publication Critical patent/JPH04312935A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To contrive to mitigate a stress generating from a mounting substrate, for instance, in a heating condition when a semiconductor chip is adhered onto the mounting substrate and to protect the semiconductor chip from adverse effect due to generation of impurities from an adhesive agent. CONSTITUTION:By a sheet type composite adhesive agent 3 in which a thermoplastic resin 4 is coated with a thermosetting resin 5, a semiconductor chip 2 is secured to a mounting substrate 1. Accordingly, features of the thermosetting resin 5 and the thermoplastic resin 4 are combined and the object of the present invention is accomplished.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、シート状複合接着剤お
よびそれを用いたダイボンド方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sheet-like composite adhesive and a die bonding method using the same.

【0002】0002

【従来の技術】半導体チップを例えばリードフレームな
どのマウント基板上にダイボンディングする場合に、接
着剤を用いることがある。この接着剤としては、例えば
、熱可塑性樹脂や熱硬化性樹脂がある。
2. Description of the Related Art When die bonding a semiconductor chip onto a mounting substrate such as a lead frame, an adhesive is sometimes used. Examples of this adhesive include thermoplastic resins and thermosetting resins.

【0003】0003

【発明が解決しようとする課題】ところで、マウント基
板としてのリードフレームと半導体チップとでは熱膨張
率に差があり、高温状況では、図2に示すように、マウ
ント基板10の反りによって半導体チップ11に応力が
加わるため、半導体チップ11が破損しやすくなる。図
中、12は接着剤である。
[Problems to be Solved by the Invention] Incidentally, there is a difference in thermal expansion coefficient between a lead frame as a mount substrate and a semiconductor chip, and under high temperature conditions, as shown in FIG. Since stress is applied to the semiconductor chip 11, the semiconductor chip 11 is easily damaged. In the figure, 12 is an adhesive.

【0004】そこで、このような状況を考えると、接着
剤として弾性率の低い熱可塑性樹脂を用いれば、マウン
ト基板の反りに伴って半導体チップに加わる応力を緩和
させるのに好都合である。しかしながら、熱可塑性樹脂
の場合、高温状況において不純物を発生する性質がある
ために、その不純物が半導体チップに悪影響を及ぼし、
半導体チップの動作不良や寿命低下などの弊害をもたら
すおそれがある。
Considering this situation, it is advantageous to use a thermoplastic resin with a low modulus of elasticity as the adhesive to alleviate the stress applied to the semiconductor chip due to warpage of the mounting substrate. However, thermoplastic resin has the property of generating impurities under high temperature conditions, and these impurities can have a negative impact on semiconductor chips.
This may cause adverse effects such as malfunction and shortened lifespan of the semiconductor chip.

【0005】一方、接着剤として、熱硬化性樹脂を用い
ると、高温状況において不純物を発生しないから、前述
のような半導体チップへの悪影響がないけれども、高温
状況において弾性率が高くなるため、熱可塑性樹脂のよ
うにマウント基板の反りに伴う応力緩和に効果がないた
め、半導体チップに亀裂やクラックなどが発生するおそ
れがある。
On the other hand, when a thermosetting resin is used as an adhesive, it does not generate impurities at high temperatures, so it does not have an adverse effect on semiconductor chips as described above. However, since the elastic modulus increases at high temperatures, Unlike plastic resin, it is not effective in relieving stress caused by warping of the mounting substrate, so there is a risk that cracks or cracks may occur in the semiconductor chip.

【0006】本発明は、このような事情に鑑みて創案さ
れたもので、応力緩和を図りながらも、不純物による半
導体チップへの悪影響をなくすことを課題とする。
The present invention was devised in view of the above circumstances, and an object of the present invention is to eliminate the adverse effects of impurities on semiconductor chips while attempting to alleviate stress.

【0007】[0007]

【課題を解決するための手段】このような課題を達成す
るために、本発明は、次のような構成をとる。
[Means for Solving the Problems] In order to achieve the above-mentioned problems, the present invention has the following configuration.

【0008】本発明のシート状複合接着剤では、シート
状の熱可塑性樹脂が熱硬化性樹脂で被覆されていること
に特徴を有する。
The sheet-like composite adhesive of the present invention is characterized in that a sheet-like thermoplastic resin is coated with a thermosetting resin.

【0009】なお、このシート状複合接着剤を用いて、
マウント基板に半導体チップを取り付けてもよい。その
場合、マウント基板上にシート状複合接着剤を介して半
導体チップを載せ、前記マウント基板を所定温度に加熱
するか、または周辺を所定温度としておいて、半導体チ
ップを加圧する。
[0009] Furthermore, using this sheet-like composite adhesive,
A semiconductor chip may be attached to the mount substrate. In that case, a semiconductor chip is placed on a mount substrate via a sheet-like composite adhesive, and the mount substrate is heated to a predetermined temperature, or the periphery is kept at a predetermined temperature, and the semiconductor chip is pressurized.

【0010】0010

【作用】高温状況において、熱可塑性樹脂は弾性率が低
下して、不純物を発生する。しかし、この熱可塑性樹脂
を、不純物生成のない熱硬化性樹脂で覆っているから、
前記熱可塑性樹脂から発生する不純物で半導体チップが
汚染されることがない。しかも、高温状況において、シ
ート状複合接着剤の外皮つまり熱硬化性樹脂の弾性率が
高くなるけれども、シート状複合接着剤の中身つまり熱
可塑性樹脂の弾性率が低下するので、マウント基板の反
りに伴う応力が熱可塑性樹脂で吸収緩和されることにな
り、半導体チップの破損を防ぐ。
[Operation] Under high temperature conditions, the elastic modulus of thermoplastic resin decreases and impurities are generated. However, since this thermoplastic resin is covered with a thermosetting resin that does not generate impurities,
The semiconductor chip is not contaminated with impurities generated from the thermoplastic resin. Moreover, in high-temperature conditions, although the elastic modulus of the outer skin of the sheet-like composite adhesive, that is, the thermosetting resin, increases, the elastic modulus of the inner part of the sheet-like composite adhesive, that is, the thermoplastic resin, decreases. The accompanying stress is absorbed and relaxed by the thermoplastic resin, preventing damage to the semiconductor chip.

【0011】[0011]

【実施例】以下、本発明の一実施例を図面に基づいて詳
細に説明する。図1に本発明の一実施例を示している。 図中、1はマウント基板、2は半導体チップ、3はシー
ト状複合接着剤である。シート状複合接着剤3は、シー
ト状に形付けられた熱可塑性樹脂4を熱硬化性樹脂5で
被覆したものであり、シート状複合接着剤3の外皮とな
る熱硬化性樹脂5は、ダイボンドする際の加熱により接
着剤として機能するように、熱硬化可能な状態にされる
DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below in detail with reference to the drawings. FIG. 1 shows an embodiment of the present invention. In the figure, 1 is a mounting substrate, 2 is a semiconductor chip, and 3 is a sheet-like composite adhesive. The sheet-shaped composite adhesive 3 is a sheet-shaped thermoplastic resin 4 coated with a thermosetting resin 5. When heated, it is made into a thermosetting state so that it functions as an adhesive.

【0012】次に、ダイボンド手法を説明する。まず、
マウント基板1上にシート状複合接着剤3を介して半導
体チップ2を載せ、マウント基板1を加熱しながら半導
体チップ2を加圧する。これにより、シート状複合接着
剤3の外皮である熱硬化性樹脂5がマウント基板1と半
導体チップ2の両方に被着しながら硬化する。その一方
で、シート状複合接着剤3の中身である熱可塑性樹脂4
が軟質化して弾性率が低下するため、前記加熱によりマ
ウント基板1が反っても、この反りに伴って発生する応
力が前記熱可塑性樹脂4によって吸収緩和されることに
なる。また、加熱によって軟質化する熱可塑性樹脂4か
ら不純物が発生するものの、それが硬化する熱硬化性樹
脂5により覆われて外部から閉ざされているから、この
不純物で半導体チップ2を汚染する心配がない。
Next, the die bonding method will be explained. first,
A semiconductor chip 2 is placed on a mount substrate 1 via a sheet-like composite adhesive 3, and pressure is applied to the semiconductor chip 2 while heating the mount substrate 1. As a result, the thermosetting resin 5, which is the outer skin of the sheet-like composite adhesive 3, is cured while adhering to both the mounting substrate 1 and the semiconductor chip 2. On the other hand, the thermoplastic resin 4 which is the content of the sheet composite adhesive 3
becomes soft and its elastic modulus decreases, so even if the mount substrate 1 warps due to the heating, the stress generated due to the warp is absorbed and relaxed by the thermoplastic resin 4. Further, although impurities are generated from the thermoplastic resin 4 that becomes soft when heated, since these impurities are covered with the thermosetting resin 5 that hardens and are closed from the outside, there is no fear that these impurities will contaminate the semiconductor chip 2. do not have.

【0013】なお、本発明のシート状複合接着剤3は上
記実施例で説明した半導体チップ2のダイボンドにのみ
利用されるものでなく、種々な分野で利用できる。
The sheet-like composite adhesive 3 of the present invention is not only used for die bonding of the semiconductor chip 2 described in the above embodiment, but can also be used in various fields.

【0014】[0014]

【発明の効果】以上説明したように、本発明では、高温
状況において応力緩和に効果のあるものの不純物発生が
ある性質の熱可塑性樹脂を、高温状況において不純物発
生のない熱硬化性樹脂で被覆したから、例えばマウント
基板に半導体チップを搭載するときに本発明のシート状
複合接着剤を用いれば、マウント基板の加熱変形に伴い
発生する応力がシート状複合接着剤で吸収緩和されるこ
とになって半導体チップの破損防止を達成でき、また、
シート状複合接着剤の熱可塑性樹脂から発生する不純物
が半導体チップを汚染しないから製品信頼性の向上に貢
献する。
[Effects of the Invention] As explained above, in the present invention, a thermoplastic resin that is effective in stress relaxation under high temperature conditions but generates impurities is coated with a thermosetting resin that does not generate impurities under high temperature conditions. Therefore, for example, if the sheet composite adhesive of the present invention is used when mounting a semiconductor chip on a mount board, the stress generated due to heating deformation of the mount board will be absorbed and alleviated by the sheet composite adhesive. It is possible to prevent damage to semiconductor chips, and
Impurities generated from the thermoplastic resin in the sheet composite adhesive do not contaminate semiconductor chips, contributing to improved product reliability.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本発明の一実施例の接着剤を用いた半導体装置
の縦断面図である。
FIG. 1 is a longitudinal cross-sectional view of a semiconductor device using an adhesive according to an embodiment of the present invention.

【図2】従来例の不都合を示す半導体装置の縦断面図で
ある。
FIG. 2 is a longitudinal cross-sectional view of a semiconductor device showing disadvantages of the conventional example.

【符号の説明】[Explanation of symbols]

1  マウント基板                
      2  半導体チップ 3  シート状複合接着剤             
   4  熱可塑性樹脂 5  熱硬化性樹脂
1 Mount board
2 Semiconductor chip 3 Sheet-like composite adhesive
4 Thermoplastic resin 5 Thermosetting resin

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】シート状の熱可塑性樹脂が熱硬化性樹脂で
被覆されていることを特徴とするシート状複合接着剤。
1. A sheet-like composite adhesive characterized in that a sheet-like thermoplastic resin is coated with a thermosetting resin.
【請求項2】マウント基板上に請求項1に記載のシート
状複合接着剤を介して半導体チップを載せ、前記マウン
ト基板を所定温度に加熱するか、または周辺を所定温度
としておいて、半導体チップを加圧することを特徴とす
るダイボンド方法。
2. A semiconductor chip is mounted on a mount substrate via the sheet-like composite adhesive according to claim 1, and the mount substrate is heated to a predetermined temperature or the surrounding area is kept at a predetermined temperature. A die bonding method characterized by applying pressure.
JP3065997A 1991-03-29 1991-03-29 Composite adhesive sheet agent and die bonding method using it Pending JPH04312935A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3065997A JPH04312935A (en) 1991-03-29 1991-03-29 Composite adhesive sheet agent and die bonding method using it

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3065997A JPH04312935A (en) 1991-03-29 1991-03-29 Composite adhesive sheet agent and die bonding method using it

Publications (1)

Publication Number Publication Date
JPH04312935A true JPH04312935A (en) 1992-11-04

Family

ID=13303160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3065997A Pending JPH04312935A (en) 1991-03-29 1991-03-29 Composite adhesive sheet agent and die bonding method using it

Country Status (1)

Country Link
JP (1) JPH04312935A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6016013A (en) * 1996-08-20 2000-01-18 Nec Corporation Semiconductor device mounting structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6016013A (en) * 1996-08-20 2000-01-18 Nec Corporation Semiconductor device mounting structure

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