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JPH04302443A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPH04302443A
JPH04302443A JP3091441A JP9144191A JPH04302443A JP H04302443 A JPH04302443 A JP H04302443A JP 3091441 A JP3091441 A JP 3091441A JP 9144191 A JP9144191 A JP 9144191A JP H04302443 A JPH04302443 A JP H04302443A
Authority
JP
Japan
Prior art keywords
semiconductor integrated
wiring layer
chip
integrated circuit
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3091441A
Other languages
Japanese (ja)
Inventor
Masahiro Nakamura
雅博 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP3091441A priority Critical patent/JPH04302443A/en
Publication of JPH04302443A publication Critical patent/JPH04302443A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/023Redistribution layers [RDL] for bonding areas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To avoid an unwired part or an increase in a chip size in an automatic layout operation by a method wherein at least one out of a bonding pad for power-supply use and a bonding pad for grounding use is arranged in a chip corner part in a semiconductor integrated circuit. CONSTITUTION:Bonding pads 3 for power-supply use and bonding pads 2 for grounding use are provided to all corner parts in a semiconductor integrated circuit chip 1. A second-layer-wiring layer 4 on the outermost circumference of the chip is a wiring layer for grounding use; it is connected to the bonding pads 2 for grounding use in four parts in the chip corner parts. A second-layer wiring layer 5 is wiring layer for power-supply use; it is connected to the bonding pads 3 for power-supply use in four parts in the chip corner parts via contact blocks 6 which connect a first-layer wiring layer 7 and a first-layer wiring layer to the second-layer wiring layer. Thereby, it is possible to avoid an unwired part or an increase in a chip size in an automatic layout operation.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、半導体集積回路に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor integrated circuits.

【0002】0002

【従来の技術】従来の半導体集積回路においては、端子
数も高々84ピン程度と少なく、チップサイズも9mm
四方以下がほとんどであった。従って、半導体集積回路
上における電源、グランドは1組ないし2組であり、チ
ップの対辺に置かれるのが一般的であった。
[Prior Art] In conventional semiconductor integrated circuits, the number of terminals is as small as 84 pins at most, and the chip size is 9 mm.
Most were four sides or smaller. Therefore, it has been common for a semiconductor integrated circuit to have one or two sets of power supply and ground, which are placed on opposite sides of the chip.

【0003】しかしながら近年、半導体集積回路の高集
積化はめざましく、大規模になる一方である。高集積化
にともない大規模セルと呼ばれる機能単位の半導体集積
回路を1チップ上に集積することによりシステムオンチ
ップを実現することが可能となってきた。特に、CPU
コア方式と呼ばれるカスタムLSIは、CPU、ROM
、RAM、I/Oポート、シリアルI/O、タイマ等の
LSI製造メーカが用意した大規模セルを組み合わせる
ことにより、また、LSI製造メーカが用意した基本ゲ
ートセルを組み合わせてユーザ独自の回路(以下、ユー
ザセルと呼ぶ)を設計し、ユーザセルとLSI製造メー
カが用意した大規模セルを組み合わせることにより、ユ
ーザは独自の目的にあったマイクロコンピュータを自由
に構成できる(このようなマイクロコンピュータを以下
、カスタムマイコンと呼ぶ)。
However, in recent years, the degree of integration of semiconductor integrated circuits has been remarkable, and the scale of semiconductor integrated circuits has continued to increase. With the trend toward higher integration, it has become possible to realize a system on a chip by integrating semiconductor integrated circuits in functional units called large-scale cells on one chip. In particular, CPU
Custom LSI called core method is CPU, ROM
, RAM, I/O ports, serial I/O, timers, etc. by combining large-scale cells prepared by LSI manufacturers, and by combining basic gate cells prepared by LSI manufacturers to create user-specific circuits (hereinafter referred to as By designing a user cell (called a user cell) and combining the user cell with a large-scale cell prepared by an LSI manufacturer, users can freely configure a microcomputer that suits their own purpose. (called a custom microcontroller).

【0004】このような半導体集積回路の高集積化にと
もない、一方では、チップサイズの肥大化、端子数の増
加にともない、半導体集積回路上の電源、グランドの数
も増加し、少なくとも4組以上の電源、グランドを有す
る半導体集積回路が一般的となってきている。
[0004] As semiconductor integrated circuits become more highly integrated, on the other hand, as the chip size and the number of terminals increase, the number of power supplies and grounds on semiconductor integrated circuits also increases, and at least four sets or more are required. 2. Description of the Related Art Semiconductor integrated circuits having multiple power supplies and grounds have become commonplace.

【0005】[0005]

【発明が解決しようとする課題】上述したカスタムマイ
コンにおいては、大規模セルとユーザセル、及び外部端
子との接続は、通常自動レイアウトにより行われる。半
導体集積回路チップのコーナー部は、コーナー部という
制約上どうしても狭いところに配線が集中しがちであり
、自動レイアウトにおける未配線またはチップサイズの
増大につながるという問題点があった。
In the above-described custom microcontroller, connections between large-scale cells, user cells, and external terminals are usually performed by automatic layout. Due to the corner portion of a semiconductor integrated circuit chip, wiring tends to be concentrated in a narrow area due to the corner portion, which causes problems such as unwiring in automatic layout or an increase in chip size.

【0006】さらに、チップコーナー部は半導体集積回
路の使用周囲温度の上昇時、下降時における半導体集積
回路チップと半導体集積回路パッケージを構成する樹脂
との熱膨張率の差による応力が集中する箇所である。半
導体集積回路チップサイズが大きいほど、この応力は大
きなものとなり、半導体集積回路チップコーナー部にト
ランジスタを配置することは、半導体集積回路の信頼性
を低下させる可能性があるという問題点があった。
Furthermore, the chip corner is a place where stress is concentrated due to the difference in thermal expansion coefficient between the semiconductor integrated circuit chip and the resin constituting the semiconductor integrated circuit package when the ambient temperature in which the semiconductor integrated circuit is used increases or decreases. be. This stress increases as the semiconductor integrated circuit chip size increases, and arranging transistors at the corners of the semiconductor integrated circuit chip has the problem of potentially reducing the reliability of the semiconductor integrated circuit.

【0007】本発明の目的は、前記課題を解決した半導
体集積回路を提供することにある。
An object of the present invention is to provide a semiconductor integrated circuit that solves the above problems.

【0008】[0008]

【課題を解決するための手段】前記目的を達成するため
、本発明に係る半導体集積回路においては、半導体集積
回路チップコーナー部に、電源用ボンディングパッド及
びグランド用ボンディングパッドのうち少なくとも一方
を配置したものである。
[Means for Solving the Problems] In order to achieve the above object, in a semiconductor integrated circuit according to the present invention, at least one of a power supply bonding pad and a grounding bonding pad is arranged at a corner portion of a semiconductor integrated circuit chip. It is something.

【0009】[0009]

【作用】本発明の半導体集積回路は、半導体集積回路チ
ップコーナー部に、電源用ボンディングパッド、または
、グランド用ボンディングパッドを備え、自動レイアウ
トにおける未配線又はチップサイズの増大を避けるよう
にし、かつ半導体集積回路の信頼性を向上するようにし
たものである。
[Function] The semiconductor integrated circuit of the present invention is provided with a power supply bonding pad or a ground bonding pad at the semiconductor integrated circuit chip corner to avoid unwired lines or an increase in chip size in automatic layout, and This is intended to improve the reliability of integrated circuits.

【0010】0010

【実施例】次に本発明について図面を参照して説明する
DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be explained with reference to the drawings.

【0011】(実施例1)図1は、本発明の半導体集積
回路に係る実施例1を示すマスクレイアウト図である。
(Embodiment 1) FIG. 1 is a mask layout diagram showing Embodiment 1 of the semiconductor integrated circuit of the present invention.

【0012】図1において、半導体集積回路チップ1の
全てのコーナー部に、電源用ボンディングパッド3、グ
ランド用ボンディングパッド2を有している。
In FIG. 1, a semiconductor integrated circuit chip 1 has bonding pads 3 for power supply and bonding pads 2 for ground at all corners.

【0013】チップ最外周の第2層目の配線層4はグラ
ンド用配線層であり、チップコーナー部4箇所において
グランド用ボンディングパッド2と接続している。第2
層目の配線層5は電源用配線層であり、やはり、チップ
コーナー部4箇所において、それぞれ、第1層目の配線
層7、及び、第1層目の配線層と第2層目の配線層を接
続するコンタクトブロック6を介し、電源用ボンディン
グパッド3に接続している。
The second wiring layer 4 on the outermost periphery of the chip is a ground wiring layer, and is connected to the ground bonding pads 2 at four corners of the chip. Second
The third wiring layer 5 is a power supply wiring layer, and the first wiring layer 7, the first wiring layer and the second wiring layer are connected to each other at the four chip corner parts. It is connected to a power supply bonding pad 3 via a contact block 6 that connects the layers.

【0014】(実施例2)図2は、本発明の半導体集積
回路に係る実施例2を示すマスクレイアウト図である。
(Embodiment 2) FIG. 2 is a mask layout diagram showing a second embodiment of the semiconductor integrated circuit of the present invention.

【0015】図において、本実施例では、半導体集積回
路チップ1のコーナー部毎に電源用ボンディングパッド
3と、グランド用ボンディングパッド2とを配置したも
のである。
In the figure, in this embodiment, a power supply bonding pad 3 and a grounding bonding pad 2 are arranged at each corner of a semiconductor integrated circuit chip 1.

【0016】チップ最外周の第2層目の配線層4はグラ
ンド用配線層であり、チップの対角コーナー部2箇所に
おいてグランド用ボンディングパッド2と接続している
。第2層目の配線層5は電源用配線層であり、やはり、
チップ対角コーナー部2箇所において、それぞれ、第1
層目の配線層7、及び、第1層目の配線層と第2層目の
配線層を接続するコンタクトブロック6を介し、電源用
ボンディングパッド3に接続している。
The second wiring layer 4 on the outermost periphery of the chip is a ground wiring layer, and is connected to the ground bonding pads 2 at two diagonal corners of the chip. The second wiring layer 5 is a power supply wiring layer, and as expected,
At the two diagonal corners of the chip, the first
It is connected to the power supply bonding pad 3 via the second wiring layer 7 and the contact block 6 that connects the first wiring layer and the second wiring layer.

【0017】[0017]

【発明の効果】以上説明したように本発明によれば、半
導体集積回路のチップコーナー部に電源用ボンディング
パッド及びグランド用ボンディングパッドのうち少なく
とも一方を配置することにより、自動レイアウトにおけ
る未配線又はチップサイズの増大を避けることが可能と
なる。しかも、チップコーナー部近傍にトランジスタを
配置する必要がなくなり、半導体集積回路の信頼性上、
有利となる。
As explained above, according to the present invention, by arranging at least one of a power supply bonding pad and a ground bonding pad at the chip corner of a semiconductor integrated circuit, unwired or chip It is possible to avoid an increase in size. Moreover, it is no longer necessary to place transistors near the chip corners, which improves the reliability of semiconductor integrated circuits.
It will be advantageous.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本発明の半導体集積回路に係る実施例1を示す
マスクレイアウト図である。
FIG. 1 is a mask layout diagram showing a first embodiment of a semiconductor integrated circuit of the present invention.

【図2】本発明の半導体集積回路に係る実施例2を示す
マスクレイアウト図である。
FIG. 2 is a mask layout diagram showing a second embodiment of the semiconductor integrated circuit of the present invention.

【符号の説明】[Explanation of symbols]

1  半導体集積回路チップ 2  グランド用ボンディングパッド 3  電源用ボンディングパッド 4  第2層目の配線層により構成されたグランド用配
線層 5  第2層目の配線層により構成された電源用配線層
6  第2層目の配線層と第1層目の配線層を接続する
コンタクトブロック 7  第1層目の配線層
1 Semiconductor integrated circuit chip 2 Bonding pad for ground 3 Bonding pad for power supply 4 Wiring layer for ground constituted by the second wiring layer 5 Wiring layer for power supply constituted by the wiring layer of the second layer 6 Second Contact block 7 connecting the first wiring layer and the first wiring layer First wiring layer

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】  半導体集積回路チップコーナー部に、
電源用ボンディングパッド及びグランド用ボンディング
パッドのうち少なくとも一方を配置したことを特徴とす
る半導体集積回路。
[Claim 1] In the semiconductor integrated circuit chip corner part,
A semiconductor integrated circuit characterized in that at least one of a power supply bonding pad and a grounding bonding pad is arranged.
JP3091441A 1991-03-29 1991-03-29 Semiconductor integrated circuit Pending JPH04302443A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3091441A JPH04302443A (en) 1991-03-29 1991-03-29 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3091441A JPH04302443A (en) 1991-03-29 1991-03-29 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPH04302443A true JPH04302443A (en) 1992-10-26

Family

ID=14026461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3091441A Pending JPH04302443A (en) 1991-03-29 1991-03-29 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH04302443A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006013035A (en) * 2004-06-24 2006-01-12 Fujitsu Ltd Semiconductor integrated circuit and design method of semiconductor integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006013035A (en) * 2004-06-24 2006-01-12 Fujitsu Ltd Semiconductor integrated circuit and design method of semiconductor integrated circuit

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