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JPH04288847A - Semiconductor test device - Google Patents

Semiconductor test device

Info

Publication number
JPH04288847A
JPH04288847A JP4316591A JP4316591A JPH04288847A JP H04288847 A JPH04288847 A JP H04288847A JP 4316591 A JP4316591 A JP 4316591A JP 4316591 A JP4316591 A JP 4316591A JP H04288847 A JPH04288847 A JP H04288847A
Authority
JP
Japan
Prior art keywords
probe needle
signal
needle
showing
probe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4316591A
Other languages
Japanese (ja)
Inventor
Takashi Yamamoto
隆司 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4316591A priority Critical patent/JPH04288847A/en
Publication of JPH04288847A publication Critical patent/JPH04288847A/en
Pending legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To design the shape of a probe needle used far a wafer test in such a fashion that two different signals may be transmitted. CONSTITUTION:The shape of a probe needle is designed to be in an electrically insulated state so that two different signals may be transmitted. More specifically, the needle is divided into a central core and an outer core so as to classify the type of each signal to be transferred. A signal to be transmitted by one probe needle 6 is capable of setting a different type. For example, it is divided into a sense signal and a force signal and handled in a different fashion, which makes it possible to enhance and stabilize measurement accuracy in a wafer test.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】この発明は、半導体集積回路(以
下ICという)をウエハチップ状態で行う電気的特性試
験(以下ウエハテストという)で使用するプローブ針に
関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a probe needle used in electrical characteristic testing (hereinafter referred to as wafer test) of semiconductor integrated circuits (hereinafter referred to as IC) in the form of wafer chips.

【0002】0002

【従来の技術】図5は従来のウエハテストの状態を示す
斜視図で、図において1はICチップ、2はICチップ
1に形成された電極パッド、3はICチップ1の電気的
特性をみるため電極バッド2に接触させるプローブ針で
ある。図6は図5に示したプローブ針3の形状を示す拡
大側面図、図7は図6に示した矢印Bの方向から見たプ
ローブ針3の底面図、図8は、図6に示したプローブ針
による針跡を示す電極パッド2の上面図である。図にお
いて4はプローブ針3の先端、5は電極パッド2にでき
たプローブ針3の針跡である。
[Prior Art] FIG. 5 is a perspective view showing the state of a conventional wafer test. In the figure, 1 is an IC chip, 2 is an electrode pad formed on the IC chip 1, and 3 is an electrical characteristic of the IC chip 1. This is a probe needle that is brought into contact with the electrode pad 2. 6 is an enlarged side view showing the shape of the probe needle 3 shown in FIG. 5, FIG. 7 is a bottom view of the probe needle 3 seen from the direction of arrow B shown in FIG. 6, and FIG. 8 is an enlarged side view showing the shape of the probe needle 3 shown in FIG. FIG. 2 is a top view of the electrode pad 2 showing needle marks caused by a probe needle. In the figure, 4 is the tip of the probe needle 3, and 5 is a trace of the probe needle 3 made on the electrode pad 2.

【0003】次に動作について説明する。ICのウエハ
テストにおいて、ICチップ1上の電極パッド2の中心
部近辺にプローブ針3の先端がほぼ円形に当たる様に設
計されており、そのため電極パッド2の中央付近には、
針跡5が残る。すなわち、プローブ針3は構造的に例え
ばタングステンの様な金属質から成る単一形状を構成し
ていて、そのプローブ針3を介して或る一つの電気信号
が伝搬されている。
Next, the operation will be explained. In IC wafer testing, the probe needle 3 is designed so that the tip of the probe needle 3 hits the center of the electrode pad 2 on the IC chip 1 in a substantially circular shape.
A needle mark 5 remains. That is, the probe needle 3 has a single structure made of a metal such as tungsten, and a certain electrical signal is propagated through the probe needle 3.

【0004】0004

【発明が解決しようとする課題】従来のプローブ針は以
上の様に構成されているので、ICチップと、ウエハテ
ストを行なっている試験装置との間でやり取りされる信
号が、一つの目的或いは種類しか伝搬されないという問
題点が有り、二つ以上の信号を伝搬するには、プローブ
針や電極パッドを別に設けなければならないなどの問題
点もあった。
[Problem to be Solved by the Invention] Since the conventional probe needle is constructed as described above, the signals exchanged between the IC chip and the test equipment that performs the wafer test are used for one purpose or the other. There is a problem in that only one type of signal can be propagated, and in order to propagate two or more signals, probe needles and electrode pads must be provided separately.

【0005】この発明は上記のような問題点を解決する
為になされたもので、一つのプローブ針で二つの種類の
電気信号が伝搬される様にした半導体試験装置を得る事
を目的としている。
This invention was made to solve the above-mentioned problems, and its purpose is to obtain a semiconductor testing device in which two types of electrical signals can be propagated using one probe needle. .

【0006】[0006]

【課題を解決するための手段】この発明に係る半導体試
験装置は、プローブ針の形状をその内部に二つの導体を
設け、それらの間を電気的に絶縁したものである。
[Means for Solving the Problems] A semiconductor testing device according to the present invention has a probe needle having two conductors provided therein and electrically insulated between them.

【0007】[0007]

【作用】この発明におけるプローブ針は、電気的に絶縁
された二つの導体から構成されているので、二つの異な
る電気信号を伝搬できる。
[Operation] Since the probe needle according to the present invention is composed of two electrically insulated conductors, it can propagate two different electrical signals.

【0008】[0008]

【実施例】実施例1.以下、この発明の一実施例を図に
ついて説明する。図1はウエハテストの状態を示す斜視
図、図2は図1に示したプローブ針の構造を示す拡大斜
視図、図3は図2に示した矢印Aの方向から見たプロー
ブ針の底面図、図4は図2に示したプローブ針による針
跡を示す電極パッドの上面図である。図において、1は
ウエハ上に形成されたICチップ、2はICチップ1上
に形成された電極パッド、6はプローブ針、7は先端、
8は針跡a、9は針跡bを示す。
[Example] Example 1. An embodiment of the present invention will be described below with reference to the drawings. 1 is a perspective view showing the state of a wafer test, FIG. 2 is an enlarged perspective view showing the structure of the probe needle shown in FIG. 1, and FIG. 3 is a bottom view of the probe needle seen from the direction of arrow A shown in FIG. , FIG. 4 is a top view of the electrode pad showing the needle mark caused by the probe needle shown in FIG. 2. In the figure, 1 is an IC chip formed on a wafer, 2 is an electrode pad formed on the IC chip 1, 6 is a probe needle, 7 is a tip,
8 shows the needle mark a, and 9 shows the needle mark b.

【0009】次に、動作について説明する。図2におい
て、プローブ針6は図6の従来例に示したプローブ針3
とは違って、電気的に絶縁された波線部分と実線部分の
二つの導体を持ち、互に目的の異なる信号が伝搬するこ
とができる。ここで例えば二つの異なる電気信号として
、センス信号とフォース信号とを想定する。従来のプロ
ーブ針3の様に一つの電気信号しか伝搬出来ない構造の
場合と違って、この発明のプローブ針6の構成によれば
、プローブ針6の中で電気的に絶縁された内側をフォー
ス信号が伝搬する様にし、外側をセンス信号が伝搬する
様に設定できる。これによってICチップ1の電極パッ
ド2まで信号のケルビン化が図れる。
Next, the operation will be explained. In FIG. 2, the probe needle 6 is the same as the probe needle 3 shown in the conventional example of FIG.
Unlike, it has two conductors, a wavy line part and a solid line part, which are electrically insulated, and signals with different purposes can be propagated between them. Here, for example, assume that two different electrical signals are a sense signal and a force signal. Unlike the conventional probe needle 3, which has a structure in which only one electrical signal can be propagated, the structure of the probe needle 6 of the present invention allows the electrically insulated inside of the probe needle 6 to be subjected to force. It can be set so that the signal can be propagated, and the outside can be set so that the sense signal can be propagated. This allows the signal to be converted to Kelvin up to the electrode pad 2 of the IC chip 1.

【0010】実施例2.なお、上記実施例では二つの異
なる電気信号としてセンス信号とフォース信号とを取扱
って説明したが、異なる電気信号として、一つをクロッ
クの様な入力・出力信号もう一つをGND信号としても
よい。
Example 2. In the above embodiment, the sense signal and the force signal are used as two different electrical signals, but as different electrical signals, one may be an input/output signal such as a clock, and the other may be a GND signal. .

【0011】また、プローブ針6の構造を中芯部と外芯
部とでメッキで構成する様にしてもよい。
Further, the probe needle 6 may have a structure in which the central core portion and the outer core portion are plated.

【0012】0012

【発明の効果】以上のように、この発明によれば、一つ
のプローブ針を伝搬する信号を二つの異なる信号になる
様に構成したので、ウエハテストにおける測定環境を精
度面から向上し、また、安定した測定が得られる効果が
ある。
[Effects of the Invention] As described above, according to the present invention, since the signal propagating through one probe needle is configured to become two different signals, the measurement environment in wafer testing can be improved in terms of accuracy, and This has the effect of providing stable measurements.

【図面の簡単な説明】[Brief explanation of the drawing]

【図1】この発明に係る半導体試験装置の一実施例によ
るウエハテストの状態を示す斜視図である。
FIG. 1 is a perspective view showing a wafer test state by an embodiment of a semiconductor testing apparatus according to the present invention.

【図2】図1に示したプローブ針の構造を示す拡大斜視
図である。
FIG. 2 is an enlarged perspective view showing the structure of the probe needle shown in FIG. 1.

【図3】図2に示した矢印Aの方向から見たプローブ針
の底面図である。
3 is a bottom view of the probe needle seen from the direction of arrow A shown in FIG. 2. FIG.

【図4】図2に示したプローブ針による針跡を示す電極
パッドの上面図である。
FIG. 4 is a top view of the electrode pad showing needle marks caused by the probe needle shown in FIG. 2;

【図5】従来の半導体試験装置によるウエハテストの状
態を示す斜視図である。
FIG. 5 is a perspective view showing a state of wafer testing using a conventional semiconductor testing device.

【図6】図5に示したプローブ針の構造を示す拡大側面
図である。
6 is an enlarged side view showing the structure of the probe needle shown in FIG. 5. FIG.

【図7】図6に示した矢印Bの方向から見たプローブ針
の底面図である。
7 is a bottom view of the probe needle seen from the direction of arrow B shown in FIG. 6. FIG.

【図8】図6に示したプローブ針による針跡を示す電極
パッドの上面図である。
FIG. 8 is a top view of the electrode pad showing needle marks caused by the probe needle shown in FIG. 6;

【符号の説明】[Explanation of symbols]

1  ICチップ 2  電極パッド 6  プローブ針 7  先端 8  針跡a 9  針跡b 1 IC chip 2 Electrode pad 6 Probe needle 7 Tip 8 Needle mark a 9 Needle mark b

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】  半導体集積回路において、これをウエ
ハチップ状態で電気的特性を試験する治工具たる固定プ
ロープボードにおいて、上記固定プロープボードに取り
つけられるところのプローブ針の形状を、電気的に異な
る目的や種類の信号を伝搬する様な構造にした事を特徴
とする半導体試験装置。
Claim 1: In a fixed probe board, which is a jig and tool for testing the electrical characteristics of a semiconductor integrated circuit in the form of a wafer chip, the shape of the probe needle attached to the fixed probe board is designed for different electrical purposes. A semiconductor testing device characterized by having a structure capable of propagating signals of various types.
JP4316591A 1991-03-08 1991-03-08 Semiconductor test device Pending JPH04288847A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4316591A JPH04288847A (en) 1991-03-08 1991-03-08 Semiconductor test device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4316591A JPH04288847A (en) 1991-03-08 1991-03-08 Semiconductor test device

Publications (1)

Publication Number Publication Date
JPH04288847A true JPH04288847A (en) 1992-10-13

Family

ID=12656266

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4316591A Pending JPH04288847A (en) 1991-03-08 1991-03-08 Semiconductor test device

Country Status (1)

Country Link
JP (1) JPH04288847A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6404213B2 (en) 1999-01-19 2002-06-11 Mitsubishi Denki Kabushiki Kaisha Probe stylus
JP2010238939A (en) * 2009-03-31 2010-10-21 Fujitsu Semiconductor Ltd Semiconductor device evaluation method, semiconductor device manufacturing method, and probe

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6404213B2 (en) 1999-01-19 2002-06-11 Mitsubishi Denki Kabushiki Kaisha Probe stylus
US6529024B2 (en) 1999-01-19 2003-03-04 Mitsubishi Denki Kabushiki Kaisha Probe stylus
JP2010238939A (en) * 2009-03-31 2010-10-21 Fujitsu Semiconductor Ltd Semiconductor device evaluation method, semiconductor device manufacturing method, and probe

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