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JPH04280990A - Local plating device - Google Patents

Local plating device

Info

Publication number
JPH04280990A
JPH04280990A JP4342791A JP4342791A JPH04280990A JP H04280990 A JPH04280990 A JP H04280990A JP 4342791 A JP4342791 A JP 4342791A JP 4342791 A JP4342791 A JP 4342791A JP H04280990 A JPH04280990 A JP H04280990A
Authority
JP
Japan
Prior art keywords
laser
plated
plating
mask
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4342791A
Other languages
Japanese (ja)
Inventor
Takeshi Morita
毅 森田
Minoru Fujita
実 藤田
Masatoshi Sunamoto
昌利 砂本
Osamu Hayashi
修 林
Susumu Hoshinouchi
星之内 進
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4342791A priority Critical patent/JPH04280990A/en
Priority to US07/845,950 priority patent/US5292418A/en
Priority to DE4207197A priority patent/DE4207197C2/en
Priority to GB9204936A priority patent/GB2253413B/en
Publication of JPH04280990A publication Critical patent/JPH04280990A/en
Pending legal-status Critical Current

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  • Electroplating Methods And Accessories (AREA)

Abstract

PURPOSE:To form a bump for connecting the inner lead of TAB and a semiconductor chip with high quality and precision. CONSTITUTION:A mask 21 is arranged on the rear of a material 2 to be plated, an opening 21a is provided to the mask 21 to reflect an irradiating laser beam 6 with its inner periphery and to transmit the beam to the rear of the material 2, and the variance in the laser beam output reaching the rear of the material 2 is reduced by the reflection in the opening 21a.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】請求項1及び請求項2に係る発明
は、例えばTAB(Tape Automated B
onding)のインナーリードと半導体チップとを接
続するためのバンプなど、接点や電極を電子機器部品の
一部にめっきして形成するための局部めっき装置に関す
るものである。
[Industrial Application Field] The inventions according to claims 1 and 2 are, for example, TAB (Tape Automated B).
The present invention relates to a local plating device for plating and forming contacts and electrodes on parts of electronic device parts, such as bumps for connecting inner leads (onding) and semiconductor chips.

【0002】0002

【従来の技術】図5は例えば特公昭60−45278号
公報に示された従来の電気端子の局部めっき方法を示す
断面図である。図において、陰極1上には電気端子など
の被めっき材2が設けられている。この被めっき材2の
周囲にはマスク3が設けられている。また、めっき液の
噴流4aを形成するノズル5が、被めっき材2に対向し
て設けられている。
2. Description of the Related Art FIG. 5 is a sectional view showing a conventional local plating method for electrical terminals, which is disclosed in, for example, Japanese Patent Publication No. 60-45278. In the figure, a material to be plated 2 such as an electrical terminal is provided on a cathode 1 . A mask 3 is provided around the material 2 to be plated. Further, a nozzle 5 that forms a jet stream 4a of plating solution is provided facing the material to be plated 2.

【0003】このような従来の噴流式の局部めっき方法
においては、陰極1と図示しない陽極との間に電圧を印
加して、めっきを行う箇所にめっき液の噴流4aを吹き
出させていた。この方法により、被めっき材2ごとにマ
スキングすることなく、高速で局部めっきを行うことが
可能となる。
In such a conventional jet-type local plating method, a voltage is applied between the cathode 1 and an anode (not shown) to blow out a jet 4a of plating solution onto the area to be plated. This method makes it possible to perform local plating at high speed without masking each material 2 to be plated.

【0004】次に、図4は例えば特公昭59−1797
号公報に示された従来のレーザを援用した局部めっき方
法を示す構成図である。図において、レーザ6を透過す
る材料、例えば石英で製作された容器7には、めっき液
4が満たされている。めっき液4の中には、陰極となる
ガラス製の被めっき材8と陽極9とが互いに対向して入
れられている。被めっき材8の表面には、金属層10が
形成されている。被めっき材8及び陽極9は、電源11
及び電圧変調器12に接続されている。容器7の外部に
は、レーザ発振器などのエネルギー源13,レーザ変調
器14,レンズ15及びスキャニングミラー16が設け
られている。
Next, FIG. 4 shows, for example,
FIG. 2 is a configuration diagram showing a conventional local plating method using a laser, which is disclosed in the above publication. In the figure, a plating solution 4 is filled in a container 7 made of a material that transmits a laser beam 6, such as quartz. In the plating solution 4, a glass plated material 8 serving as a cathode and an anode 9 are placed facing each other. A metal layer 10 is formed on the surface of the material to be plated 8 . The material to be plated 8 and the anode 9 are powered by a power source 11.
and the voltage modulator 12. An energy source 13 such as a laser oscillator, a laser modulator 14, a lens 15, and a scanning mirror 16 are provided outside the container 7.

【0005】エネルギー源13で発振されレーザ変調器
14を通過したレーザ6は、レンズ15によって集束さ
れた後、スキャニングミラー16で位置決めされ、容器
7を透過して被めっき材8に照射される。照射されたレ
ーザ6は、ガラス製の被めっき材8も透過し、金属層1
0で焦点が結ばれる。また、被めっき材8は電源11に
よって負の電位となっており、これにより電界めっきが
行われる。 このとき、被めっき材8の金属層10は、レーザ6の照
射により局部的に高温になるため、めっき速度が増大す
る。また、被めっき材8にマスクをすることなく、μm
のオーダーの微細な局部めっきが行える。
The laser 6 oscillated by the energy source 13 and passed through the laser modulator 14 is focused by a lens 15, then positioned by a scanning mirror 16, and transmitted through a container 7 to be irradiated onto a material 8 to be plated. The irradiated laser 6 also passes through the glass plated material 8, and the metal layer 1
Focus is established at 0. Further, the material to be plated 8 is set to a negative potential by the power source 11, and thereby electroplating is performed. At this time, the metal layer 10 of the material to be plated 8 becomes locally hot due to the irradiation with the laser 6, so that the plating speed increases. In addition, without masking the material 8 to be plated, μm
It is possible to perform fine local plating on the order of .

【0006】[0006]

【発明が解決しようとする課題】上記のようなレーザを
用いない従来の噴流式めっき法では、粒状のめっき被膜
になりやすく、めっき被膜と被めっき材2との間の界面
でクラックを発生する場合があるなどの問題点があった
。また、従来のレーザを援用した噴流めっき法では、ス
キャニングミラー16でめっき部の位置を特定するため
、スキャニングの位置精度が悪く、レーザ6の焦点がず
れたり、金属層10に対するレーザ6の入射角度が変化
したりして、金属層10に照射されるレーザ6のパワー
密度や金属層10のレーザ吸収率が変化し、この結果め
っき品質にばらつきが生じるという問題点があった。
[Problem to be solved by the invention] In the conventional jet plating method that does not use a laser as described above, the plating film tends to be granular, and cracks occur at the interface between the plating film and the material to be plated 2. There were some problems, such as: In addition, in the conventional jet plating method using a laser, the position of the plating part is specified by the scanning mirror 16, so the scanning position accuracy is poor, and the focus of the laser 6 may shift, or the incident angle of the laser 6 with respect to the metal layer 10 may change. As a result, the power density of the laser 6 irradiated to the metal layer 10 and the laser absorption rate of the metal layer 10 change, resulting in variations in plating quality.

【0007】請求項1及び請求項2に係る発明は、上記
のような問題点を解決することを課題としてなされたも
のであり、被めっき材の裏面に到達するレーザ出力を安
定させ、高速のめっき速度を維持しつつ、めっき品質の
ばらつきを抑えることができる局部めっき装置を得るこ
とを目的とする。
The inventions according to claims 1 and 2 have been made with the aim of solving the above-mentioned problems, and are aimed at stabilizing the laser output that reaches the back side of the material to be plated and achieving high-speed processing. The purpose of the present invention is to obtain a local plating device that can suppress variations in plating quality while maintaining the plating speed.

【0008】[0008]

【課題を解決するための手段】請求項1に係る発明の局
部めっき装置は、被めっき材の裏面上にマスクを配置し
、かつ照射されたレーザを内周面で反射させながら伝送
して被めっき材の裏面に到達させるための開口部をマス
クに設けたものである。請求項2に係る発明の局部めっ
き装置は、被めっき材の裏面上にレーザ透過部材を配置
し、このレーザ透過部材の被めっき材と反対の面上にマ
スクを配置し、かつ照射されたレーザを内周面で反射さ
せながら伝送してレーザ透過部材に到達させるための開
口部をマスクに設けたものである。
[Means for Solving the Problems] The local plating apparatus of the invention according to claim 1 is characterized in that a mask is placed on the back surface of the material to be plated, and the irradiated laser beam is transmitted while being reflected on the inner peripheral surface to coat the material. The mask has an opening that allows access to the back side of the plating material. In the local plating apparatus of the invention according to claim 2, a laser transmitting member is arranged on the back surface of the material to be plated, a mask is arranged on the surface of the laser transmitting member opposite to the material to be plated, and the irradiated laser The mask is provided with an opening through which the laser beam is transmitted while being reflected on the inner circumferential surface and reaches the laser transmitting member.

【0009】[0009]

【作用】請求項1に係る発明においては、レーザをマス
クの開口部内で反射させながら伝送することにより、被
めっき材の裏面に到達するレーザ出力のばらつきを抑え
る。請求項2に係る発明においては、レーザをマスクの
開口部内で反射させながら伝送することにより、被めっ
き材の裏面に到達するレーザ出力のばらつきを抑え、ま
たレーザ透過部材を通して被めっき材の裏面にレーザを
到達させることにより、レーザの出力を効率良く被めっ
き材に投入する。
In the invention according to claim 1, by transmitting the laser while being reflected within the opening of the mask, variations in the laser output reaching the back surface of the material to be plated are suppressed. In the invention according to claim 2, by transmitting the laser while being reflected within the opening of the mask, variations in the laser output reaching the back surface of the material to be plated are suppressed, and the laser beam is transmitted to the back surface of the material to be plated through the laser transmitting member. By letting the laser reach the target, the output of the laser is efficiently applied to the material to be plated.

【0010】0010

【実施例】以下、請求項1に係る発明の実施例を図につ
いて説明する。図1は請求項1に係る発明の一実施例(
第1実施例)による局部めっき装置を示す構成図であり
、図6と同一又は相当部分には同一符号を付し、その説
明を省略する。図において、被めっき材2は銅又はリン
青銅などからなっている。この被めっき材2の裏面には
、ステンレス鋼又はモリブデンなどの金属製のマスク2
1が接している。このマスク21は、電源(図示せず)
に接続されて陰極となる。マスク21には、開口部21
aが設けられている。開口部21は、レーザ6を反射し
やすくするために内周面が平滑に研磨されており、また
レーザ6の入射側の径が出射側(被めっき材2側)の径
よりも大きくなっている。レンズ15は、開口部21a
に対向して配置されている。被めっき材2の表面には、
めっき液4の噴流4aを形成するノズル5が対向してい
る。
Embodiments Hereinafter, embodiments of the invention according to claim 1 will be described with reference to the drawings. FIG. 1 shows an embodiment of the invention according to claim 1 (
7 is a configuration diagram showing a local plating apparatus according to the first embodiment, in which the same or equivalent parts as in FIG. 6 are denoted by the same reference numerals, and the explanation thereof will be omitted. In the figure, the material to be plated 2 is made of copper, phosphor bronze, or the like. A mask 2 made of metal such as stainless steel or molybdenum is placed on the back side of the material to be plated 2.
1 is in contact. This mask 21 is powered by a power source (not shown).
It is connected to the cathode. The mask 21 has an opening 21
A is provided. The inner circumferential surface of the opening 21 is polished to be smooth in order to easily reflect the laser 6, and the diameter on the incident side of the laser 6 is larger than the diameter on the output side (the side of the material to be plated 2). There is. The lens 15 has an opening 21a
is placed opposite. On the surface of the material to be plated 2,
Nozzles 5 that form a jet stream 4a of plating solution 4 face each other.

【0011】上記のように構成された局部めっき装置に
おいては、噴流4aに電流が流れるように、マスク21
と陽極(図示せず)との間に電圧が印加され、めっき液
4がノズル5の先端部から被めっき材2のめっき部に噴
射される。また、レーザ6は、そのエネルギーの大部分
が開口部21a内に入るように、即ち開口部21aより
も小さなビーム径になるようにレンズ15により集束さ
れ、めっき液4の噴射と同時に或は任意の時間遅れをも
って、又は間欠的に開口部21a内に照射される。この
とき、レーザ6は発散角度を有しているため、開口部2
1aの内周面で複数回反射されて被めっき材2の裏面に
到達する。この反射によって、レーザ6のパワー密度が
均一になり、裏面に熱的損傷を与えることなく、被めっ
き材2の加熱が均一に行われる。従って、めっき品質が
均一に向上する。
In the local plating apparatus configured as described above, the mask 21 is arranged so that the current flows through the jet stream 4a.
A voltage is applied between the nozzle 5 and an anode (not shown), and the plating solution 4 is injected from the tip of the nozzle 5 onto the plating portion of the material to be plated 2. The laser 6 is focused by the lens 15 so that most of its energy enters the opening 21a, that is, the beam diameter is smaller than the opening 21a, and the laser 6 is focused at the same time as the plating solution 4 is injected or optionally. The light is irradiated into the opening 21a with a time delay of At this time, since the laser 6 has a divergence angle, the opening 2
It is reflected multiple times on the inner peripheral surface of 1a and reaches the back surface of the material to be plated 2. This reflection makes the power density of the laser 6 uniform, and the material to be plated 2 is heated uniformly without causing thermal damage to the back surface. Therefore, the plating quality is uniformly improved.

【0012】ここで、上記実施例で用いたマスク21は
、厚さが5mm、開口部21aのレーザ入射側の直径が
1mm、レーザ出射側の直径が50μmであった。また
、用いたレーザ6は、YAGレーザの基本波,第2高調
波及びアルゴンイオンレーザであり、発振出力は5Wな
いし10Wであった。さらに、発振時間は、連続波で1
秒ないし2秒、パルス波で2秒ないし3秒であった。め
っき液4としては、シアン系の中性金めっき液を用い、
金含有量が12g/lであった。めっきの電流密度は、
8A/cm2ないし15A/cm2であった。ノズル5
の先端部と被めっき材2との間の間隔は1mmないし5
mmであった。例えば、上記間隔が1mmのときには、
めっき金属部22の直径が200μm、めっき金属部2
2の厚さは5μmないし20μmとなった。
The mask 21 used in the above example had a thickness of 5 mm, a diameter of the opening 21a on the laser incident side of 1 mm, and a diameter of the laser exit side of 50 μm. The laser 6 used was a YAG laser fundamental wave, second harmonic wave, and argon ion laser, and the oscillation output was 5W to 10W. Furthermore, the oscillation time is 1 for continuous waves.
The duration was 2 to 2 seconds, and the pulse wave was 2 to 3 seconds. As plating solution 4, cyan-based neutral gold plating solution is used.
The gold content was 12 g/l. The current density of plating is
It was 8A/cm2 to 15A/cm2. Nozzle 5
The distance between the tip of the plate and the material to be plated 2 is 1 mm to 5 mm.
It was mm. For example, when the above distance is 1 mm,
The diameter of the plated metal part 22 is 200 μm, the plated metal part 2
The thickness of No. 2 was 5 μm to 20 μm.

【0013】次に、請求項2に係る発明の実施例を図に
ついて説明する。図2は請求項2に係る発明の一実施例
(第2実施例)による局部めっき装置を示す構成図であ
る。図において、金属よりも熱伝導の低い材料、例えば
溶融石英からなるレーザ透過部材23の一方の面上には
、真空蒸着又はめっきによってモリブデンや金などの金
属薄膜からなる陰極24が設けられている。この陰極2
4上には被めっき材2の裏面が接している。また、レー
ザ透過部材23の他方の面上には、図1と同様のマスク
21が接している。なお、ノズル5及びレンズ15は、
図1と同様に配置されている。
Next, an embodiment of the invention according to claim 2 will be explained with reference to the drawings. FIG. 2 is a configuration diagram showing a local plating apparatus according to an embodiment (second embodiment) of the invention according to claim 2. In the figure, a cathode 24 made of a thin film of metal such as molybdenum or gold is provided on one surface of a laser-transmissive member 23 made of a material with lower thermal conductivity than metal, such as fused silica, by vacuum deposition or plating. . This cathode 2
4 is in contact with the back surface of the material to be plated 2. Further, a mask 21 similar to that shown in FIG. 1 is in contact with the other surface of the laser transmitting member 23. Note that the nozzle 5 and lens 15 are
They are arranged in the same way as in FIG.

【0014】このような局部めっき装置においては、噴
流4aに電流が流れるように、陰極24と陽極(図示せ
ず)との間に電圧が印加され、めっき液4がノズル5の
先端部から被めっき材2のめっき部に噴射される。第1
実施例と同様にマスク21の開口部21aに照射された
レーザ6は、開口部21aの内周面で複数回反射されて
レーザ透過部材23に達し、この内部を所定の発散角度
で発散しながら陰極24に到達する。陰極24に照射さ
れたレーザ6は、陰極24を介して被めっき材2を裏面
から加熱する。
In such a local plating apparatus, a voltage is applied between the cathode 24 and the anode (not shown) so that a current flows through the jet 4a, and the plating solution 4 is sprayed from the tip of the nozzle 5. It is sprayed onto the plating portion of the plating material 2. 1st
Similarly to the embodiment, the laser 6 irradiated to the opening 21a of the mask 21 is reflected multiple times on the inner circumferential surface of the opening 21a and reaches the laser transmitting member 23, and the laser 6 passes through the inside of the member while diverging at a predetermined divergence angle. The cathode 24 is reached. The laser 6 irradiated to the cathode 24 heats the material to be plated 2 from the back side via the cathode 24 .

【0015】なお、第2実施例のレーザ9の種類,照射
方法,発振出力及び発振時間等は、第1実施例と同様で
ある。また、マスク21の形状,めっき液4の種類及び
めっきの電流密度についても第1実施例と同様である。 しかし、マスク21とは別に陰極24を設けたので、開
口部21a内でレーザ6を反射させられればマスク21
の材料は導電性のものに限定されない。
The type of laser 9, irradiation method, oscillation output, oscillation time, etc. of the second embodiment are the same as those of the first embodiment. Further, the shape of the mask 21, the type of plating solution 4, and the current density for plating are also the same as in the first embodiment. However, since the cathode 24 is provided separately from the mask 21, if the laser 6 can be reflected within the opening 21a, the mask 21
The material is not limited to conductive materials.

【0016】この第2実施例の局部めっき装置では、第
1実施例と同様に、開口部21a内での反射によってレ
ーザ6のパワー密度が均一になるため、被めっき材2の
加熱が均一に行われ、めっき品質が均一に向上する。ま
た、第1実施例の装置では、陰極を兼ねる働く金属製の
マスク21が被めっき材2の裏面に直接接しているので
、レーザ6により加えられた熱の一部がマスク21に逃
げてしまうが、第2実施例の装置では、熱伝導率の低い
レーザ透過部材11に設けた薄膜状の陰極24を被めっ
き材2に接触させているので、レーザ6の熱伝導損は少
なく、被めっき材2は効率的に加熱される。
In the local plating apparatus of the second embodiment, as in the first embodiment, the power density of the laser 6 is made uniform by reflection within the opening 21a, so that the material to be plated 2 is heated uniformly. This improves the plating quality uniformly. Furthermore, in the apparatus of the first embodiment, since the metal mask 21 that also serves as a cathode is in direct contact with the back surface of the material to be plated 2, part of the heat applied by the laser 6 escapes to the mask 21. However, in the apparatus of the second embodiment, since the thin film cathode 24 provided on the laser-transmitting member 11 with low thermal conductivity is in contact with the material to be plated 2, the heat conduction loss of the laser 6 is small and the material to be plated is The material 2 is heated efficiently.

【0017】なお、上記各実施例では電解めっきを例に
説明したが、無電解めっきにもこの発明が適用できるの
は言うまでもない。無電解めっきの場合、開口部21a
にレーザ反射膜のコーティングを施せば、マスク材料と
してセラミックや樹脂なども使用できる。
Although the above embodiments have been explained using electrolytic plating as an example, it goes without saying that the present invention can also be applied to electroless plating. In the case of electroless plating, the opening 21a
Ceramics and resins can also be used as mask materials by coating the mask with a laser reflective film.

【0018】[0018]

【発明の効果】以上説明したように、請求項1に係る発
明の局部めっき装置は、被めっき材の裏面上にマスクを
配置し、かつ照射されたレーザを内周面で反射させなが
ら伝送して被めっき材の裏面に到達させるための開口部
をマスクに設けたので、開口部内での反射により被めっ
き材の裏面に到達するレーザ出力のばらつきが抑えられ
、高速のめっき速度を維持しつつ、めっき品質を均一に
向上させることができるという効果を奏する。また、請
求項2に係る発明の局部めっき装置は、被めっき材の裏
面上にレーザ透過部材を配置し、このレーザ透過部材の
被めっき材と反対の面上にマスクを配置し、かつ照射さ
れたレーザを内周面で反射させながら伝送してレーザ透
過部材に到達させるための開口部をマスクに設けたので
、請求項1に係る発明と同様の効果に加えて、金属製の
マスクを用いた場合にも、熱伝導損を少なくしてレーザ
出力を効率良く被めっき材に投入できるという効果を奏
する。を奏する。
[Effects of the Invention] As explained above, the local plating apparatus of the invention according to claim 1 places a mask on the back surface of the material to be plated, and transmits the irradiated laser while reflecting it on the inner peripheral surface. Since the mask has an opening for the laser to reach the back side of the material to be plated, variations in the laser output reaching the back side of the material to be plated due to reflection within the opening are suppressed, allowing high plating speed to be maintained. This has the effect of uniformly improving plating quality. Further, in the local plating apparatus of the invention according to claim 2, a laser transmitting member is arranged on the back surface of the material to be plated, a mask is arranged on the surface of the laser transmitting member opposite to the material to be plated, and the laser beam is irradiated. Since the mask is provided with an opening for transmitting the laser while being reflected on the inner circumferential surface and reaching the laser transmitting member, in addition to the same effect as the invention according to claim 1, it is possible to use a metal mask. Even in the case where the plating material is plated, the effect is that the laser output can be efficiently applied to the material to be plated by reducing thermal conduction loss. play.

【図面の簡単な説明】[Brief explanation of the drawing]

【図1】請求項1に係る発明の一実施例を示す構成図で
ある。
FIG. 1 is a configuration diagram showing an embodiment of the invention according to claim 1.

【図2】請求項2に係る発明の一実施例を示す構成図で
ある。
FIG. 2 is a configuration diagram showing an embodiment of the invention according to claim 2.

【図3】従来の噴流式局部めっき方法を説明するための
断面図である。
FIG. 3 is a cross-sectional view for explaining a conventional jet-type local plating method.

【図4】従来のレーザ援用めっき方法を説明するための
断面図である。
FIG. 4 is a cross-sectional view for explaining a conventional laser-assisted plating method.

【符号の説明】[Explanation of symbols]

2    被めっき材 4    めっき液 4a  噴流 6    レーザ 21    マスク 21a  開口部 23    レーザ透過部材 2 Plated material 4 Plating solution 4a Jet stream 6 Laser 21 Mask 21a Opening 23 Laser transmission member

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】  被めっき材のめっき部に対してめっき
液の噴流を吹き付けながら前記被めっき材の裏面にレー
ザを照射する局部めっき装置において、前記被めっき材
の裏面上に配置され、照射されたレーザを内周面で反射
させながら伝送して前記被めっき材の裏面に到達させる
ための開口部を有しているマスクを備えたことを特徴と
する局部めっき装置。
1. A local plating device that irradiates a laser onto the back surface of the material to be plated while spraying a jet of plating solution onto the plating portion of the material to be plated, wherein What is claimed is: 1. A local plating apparatus comprising: a mask having an opening for transmitting a laser beam while being reflected on an inner circumferential surface to reach the back surface of the material to be plated.
【請求項2】  被めっき材のめっき部に対してめっき
液の噴流を吹き付けながら前記被めっき材の裏面にレー
ザを照射する局部めっき装置において、前記被めっき材
の裏面上に配置されるレーザ透過部材と、このレーザ透
過部材の前記被めっき材と反対の面上に配置され、照射
されたレーザを内周面で反射させながら伝送して前記レ
ーザ透過部材に到達させるための開口部を有しているマ
スクを備えたことを特徴とする局部めっき装置。
2. A local plating device that irradiates a laser beam onto the back surface of the material to be plated while spraying a jet of plating solution onto the plating portion of the material to be plated, wherein a laser transmitting device is placed on the back surface of the material to be plated. a member, and an opening disposed on a surface of the laser-transmissive member opposite to the material to be plated, for transmitting the irradiated laser while reflecting it on an inner circumferential surface to reach the laser-transmissive member. A local plating device characterized by being equipped with a mask.
JP4342791A 1991-03-08 1991-03-08 Local plating device Pending JPH04280990A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP4342791A JPH04280990A (en) 1991-03-08 1991-03-08 Local plating device
US07/845,950 US5292418A (en) 1991-03-08 1992-03-04 Local laser plating apparatus
DE4207197A DE4207197C2 (en) 1991-03-08 1992-03-06 Local coating device
GB9204936A GB2253413B (en) 1991-03-08 1992-03-06 Locally plating apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4342791A JPH04280990A (en) 1991-03-08 1991-03-08 Local plating device

Publications (1)

Publication Number Publication Date
JPH04280990A true JPH04280990A (en) 1992-10-06

Family

ID=12663404

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4342791A Pending JPH04280990A (en) 1991-03-08 1991-03-08 Local plating device

Country Status (1)

Country Link
JP (1) JPH04280990A (en)

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