JPH0427122A - Manufacturing method of semiconductor device - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method of manufacturing a semiconductor device, and particularly to a technique that is effective when applied to the manufacture of microfabricated semiconductor devices.

[Conventional technology]

Generally, in the manufacture of semiconductor devices, there is an etching process for processing oxide films, nitride films, aluminum films, etc. into desired shapes. Hitachi Review vol. 1.71 shows general etching technology.
No. 5, May 1989, published by Hitachi Hyoronsha, page 33~
There are 38 pages.

[Problem to be solved by the invention]

However, as the miniaturization of semiconductor devices progresses, it has been found that differences in etching rate occur between that part of the pattern and the dense part of the pattern, resulting in large variations in etching (loading effect). . This causes problems such as remaining layers to be etched and partial over-etching, resulting in problems with the characteristics of the semiconductor device.

In order to prevent such problems, in the etching equipment, the flow rate of the etching gas, the height of the electrode, and even the pressure must be adjusted in a complicated manner. A method can be considered in which the thickness of the layer to be etched is changed in the portion shown in FIG.

The object of the present invention is not to provide a method using such an apparatus or a method for controlling the layer thickness of a device, but to solve the problem by changing the etching pattern, and to provide a method for manufacturing a semiconductor device with less loading effect.

[Means to solve the problem]

The outline of typical inventions disclosed in this application is as follows.

That is, in a method for manufacturing a semiconductor device in which a photoresist pattern of a desired shape is formed on a semiconductor substrate and a layer formed under the photoresist is etched into a desired shape, the etching region is rectangular or a combination of rectangles. This method of manufacturing a semiconductor device is characterized in that etching is performed using a photoresist pattern formed to have the same dimensions on one short side of a rectangular unit.

[For production]

According to the above-mentioned means, by making the short side of the rectangle or a combination of rectangles that become each etching region constant, the etching rate of each etching region becomes almost the same, and it is possible to manufacture a semiconductor device with less loading effect. becomes.

〔Example〕

FIG. 1 is a front view of a photoresist pattern during etching according to an embodiment of the present invention.

This photoresist pattern is created by performing various process treatments on the semiconductor substrate, and then forming an aluminum layer on the entire surface.
This is because the pad and wiring layer are formed in the same way.

As shown in FIG. 1, a photoresist pattern 1 is formed on a semiconductor substrate, and a photoresist pattern 2 is also formed on a region where a band is to be formed. A region 3 without a photoresist pattern for etching is formed around the photoresist pattern 2 on a region where a pad is to be formed, in which the aluminum layer under the photoresist pattern is exposed. A region 5 without photoresist is formed along the photoresist pattern 4 on the region where the aluminum wiring layer is to be formed. These areas without photoresist are etching areas, each having an interval A as one short side of the etching area and forming one unit.

In this embodiment, this interval A is also applied to other areas not shown.
The etching area is a rectangle or a combination of rectangles with each short side being a unit of . Etching is performed using the photoresist pattern thus formed.

As described above, in this embodiment, the etching area is formed in the shape of a rectangle or a combination of rectangles with each short side having the interval A, and the short sides of the rectangle have the same dimensions.

Because of this, no loading effect occurs because all regions are enched at the same rate.

It goes without saying that the present invention can be modified in various ways without departing from its gist. For example, the present invention may be used only in a portion of a semiconductor device that requires the highest etching precision, or may be used over the entire surface. For example, sufficient effects can be obtained even if the present invention is limited to peripheral circuits of memory elements. Further, in this embodiment, an example in which AL is used as the object of etching has been described, but the present invention may also be applied to etching polysilicon or the like.

〔Effect of the invention〕

The effects obtained by typical inventions disclosed in this application are as follows.

That is, since etching can be performed without causing loading effects, it is possible to provide a semiconductor device with no remaining etched film or over-etching, and therefore a semiconductor device with no change in characteristics.

[Brief explanation of drawings]

FIG. 1 is a front view showing the shape of a photoresist during etching of a semiconductor device according to an embodiment of the present invention. 1. Photoresist pattern on semiconductor substrate, 2. Photoresist pattern on pad formation region, 3, 5. Area without photoresist, 4. Photoresist pattern on wiring formation region. Diagram

Claims (1)

[Claims] 1. A method for manufacturing a semiconductor device in which a photoresist pattern of a desired shape is formed on a semiconductor substrate and a layer formed under the photoresist is etched into a desired shape, wherein the etched region is rectangular or rectangular. 1. A method of manufacturing a semiconductor device, characterized in that the rectangle is formed in a shape that is a combination of the rectangles, and one short side of the rectangle is etched to have the same size. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the etched region having a rectangular shape or a combination of rectangular shapes is formed in a desired portion of a region to become a semiconductor element.