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JPH04263434A - Formation of electric connection contact and manufacture of mounting board - Google Patents

Formation of electric connection contact and manufacture of mounting board

Info

Publication number
JPH04263434A
JPH04263434A JP3024426A JP2442691A JPH04263434A JP H04263434 A JPH04263434 A JP H04263434A JP 3024426 A JP3024426 A JP 3024426A JP 2442691 A JP2442691 A JP 2442691A JP H04263434 A JPH04263434 A JP H04263434A
Authority
JP
Japan
Prior art keywords
metal
metal ball
terminal electrode
base material
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3024426A
Other languages
Japanese (ja)
Other versions
JP2650499B2 (en
Inventor
Yasuhiko Horio
泰彦 堀尾
Akihito Hatakeyama
畠山 秋仁
Hirotoshi Watanabe
寛敏 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3024426A priority Critical patent/JP2650499B2/en
Publication of JPH04263434A publication Critical patent/JPH04263434A/en
Application granted granted Critical
Publication of JP2650499B2 publication Critical patent/JP2650499B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457Solder materials or compositions; Methods of application thereof
    • H05K3/3478Applying solder preforms; Transferring prefabricated solder patterns

Landscapes

  • Wire Bonding (AREA)

Abstract

PURPOSE:To enable the title electric connection contacts to be formed easily and collectively by a method wherein the recessions provided on the surface of a supporting base material are filled up with the metallic balls mainly comprising a low melting point alloy or a metal and then the fine terminal electrode surface of a board is oppositely pressure-fixed on the metallic balls 2 which are to be transferred to the electrode surface. CONSTITUTION:The recessions provided on the surface of a supporting base material 1 are filled up with metallic balls 2 mainly comprising a low melting point alloy or a metal. Next, the supporting base material 1 is heated at about 230 deg.C using a heating head 3 to melt down the metallic balls 2. Finally, when the electrode pads 5 of an IC chip 4 are oppositely pressure-fixed on the metallic balls 2, the metallic balls 2 can be transferred only to the electrode pads 5 so as to collectively form the title electric connection contacts 6.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、ICチップに代表され
るチップ状の電子部品を基板上の端子電極群と接続する
ために、微細な電気的接続接点を基板上の端子電極上の
みに正確に形成する電気的接続接点の形成法、および実
装基板の製造方法に関するものである。
[Industrial Application Field] The present invention aims to connect a chip-shaped electronic component such as an IC chip to a group of terminal electrodes on a board by forming minute electrical connection contacts only on the terminal electrodes on the board. The present invention relates to a method for accurately forming electrical connection contacts and a method for manufacturing a mounting board.

【0002】0002

【従来の技術】従来、電子部品の接続端子と基板上の回
路パターン端子との接続には半田がよく利用されていた
が、近年、たとえばICフラットパッケージ等の小型化
と、接続端子間、いわゆるピッチ間隔が次第に狭くなり
、従来のクリーム半田のスクリーン印刷による半田付け
技術で対処することが次第に困難になってきた。また、
最近では電卓、電子時計あるいは液晶ディスプレイなど
にあっては、裸のICチップをガラス基板上の電極に直
付けして実装面積の効率的利用を図ろうとする動きがあ
り、有効かつ微細な電気的接続手段が強く望まれている
。裸のICチップを基板の電極と電気的に接続する方法
としては、フリップチップ実装と呼ばれる実装方法があ
り、これはメッキ技術によりICチップの電極パッド上
に形成した突出接点(バンプ)を用いて行うものである
。既知の突出接点の形成方法は、最初にIC基板上の電
極パッド上に、クロム(Cr)、銅(Cu)、金(Au
)等の金属メッキ部を形成した後、余分なレジストと金
属蒸着膜を除去して、突出接点を形成するというもので
ある。また、別の方法としてはメッキされたAuバンプ
を印刷法で半田を介して接続することが提案されている
[Prior Art] In the past, solder was often used to connect the connection terminals of electronic components and the circuit pattern terminals on the board, but in recent years, with the miniaturization of IC flat packages, etc. As pitch spacing has become increasingly narrower, it has become increasingly difficult to cope with conventional cream solder screen printing soldering techniques. Also,
Recently, there has been a movement toward efficient use of mounting area by directly attaching bare IC chips to electrodes on glass substrates for calculators, electronic watches, and liquid crystal displays. A means of connection is highly desired. There is a mounting method called flip-chip mounting that electrically connects a bare IC chip to the electrodes of the board, and this uses protruding contacts (bumps) formed on the electrode pads of the IC chip using plating technology. It is something to do. A known method for forming protruding contacts is to first deposit chromium (Cr), copper (Cu), and gold (Au) on electrode pads on an IC substrate.
), etc., and then remove excess resist and metal deposited film to form protruding contacts. Furthermore, as another method, it has been proposed to connect plated Au bumps via solder using a printing method.

【0003】0003

【発明が解決しようとする課題】しかしながらメッキ技
術を用いたかかる方法においては、突出接点の形成方法
ならびにICチップの実装はかなり複雑で、多数の処理
工程および高度のエッチング、メッキ技術が必要であっ
た。また、従来のクリーム半田のスクリーン印刷による
半田付け技術では半田供給の限界が0.3mmピッチで
あり、さらに微細な接続は不可能であった。
[Problems to be Solved by the Invention] However, in such a method using plating technology, the method of forming the protruding contacts and the mounting of the IC chip are quite complicated, requiring a large number of processing steps and advanced etching and plating technology. Ta. Further, in the conventional soldering technology using screen printing of cream solder, the solder supply limit is 0.3 mm pitch, and even finer connections are impossible.

【0004】本発明は上記問題点に鑑みてなされたもの
であり、その目的とするところは、微細かつ密に電子部
品の電極パッドと基板上の電極群とを信頼性よく直付け
するために、基板上の電極群、あるいは電子部品、たと
えばICチップの電極パッド上に電気的接続接点を簡易
に、かつ、精度よく形成し、さらにはICチップ実装に
不可欠な微細接続を提案することにある。
The present invention has been made in view of the above-mentioned problems, and its purpose is to provide a method for directly and reliably bonding electrode pads of electronic components and electrode groups on a substrate finely and densely. , to easily and accurately form electrical connection contacts on electrode groups on a substrate or on electrode pads of electronic components, such as IC chips, and to propose micro-connections that are essential for IC chip mounting. .

【0005】[0005]

【課題を解決するための手段】本発明は上記問題点を解
決するため、微細ピッチ、微細端子電極が形成されてい
る基板の微細端子電極上への電気的接続接点の形成にお
いて、低融点合金または金属を主成分とする金属ボール
を基板の微細端子電極面を前記凹部中の前記金属ボール
に合わせて圧着して前記金属ボールを前記微細端子電極
面上に転写することにより電気的接続接点の形成を実現
しようとするものである。
[Means for Solving the Problems] In order to solve the above-mentioned problems, the present invention uses a low melting point alloy in forming electrical connection contacts on fine terminal electrodes of a substrate on which fine pitch and fine terminal electrodes are formed. Alternatively, a metal ball containing metal as a main component is crimped so that the fine terminal electrode surface of the substrate is aligned with the metal ball in the recess, and the metal ball is transferred onto the fine terminal electrode surface to form an electrical connection contact. It is an attempt to realize the formation.

【0006】[0006]

【作用】本発明の上記した方法によれば、基板上の微細
端子電極上に簡易に突出接点を信頼性よく一括形成する
ことができ、簡易で信頼性の高い電気的接続接点が形成
できる。
[Function] According to the above-described method of the present invention, protruding contacts can be easily and reliably formed all at once on fine terminal electrodes on a substrate, and simple and highly reliable electrical connection contacts can be formed.

【0007】[0007]

【実施例】以下、本発明の一実施例の電気的接続接点の
形成方法ならびにこれを用いた実装基板について図面に
基づき詳細に説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for forming an electrical connection contact according to an embodiment of the present invention and a mounting board using the same will be described in detail below with reference to the drawings.

【0008】図1(a)から(c)は本発明の電気的接
続接点の形成方法の第1の実施例を示す工程断面図であ
る。また、図2(a)(b)は本発明の電気接続接点の
形成方法を用いてICチップを基板上に実装する実装工
程断面図を示す。
FIGS. 1(a) to 1(c) are process cross-sectional views showing a first embodiment of the method for forming electrical connection contacts of the present invention. Moreover, FIGS. 2(a) and 2(b) show cross-sectional views of a mounting process in which an IC chip is mounted on a substrate using the method for forming electrical connection contacts of the present invention.

【0009】図1において、1は凹部を有する支持基材
、2は低融点合金または金属を主成分とする金属ボール
、、3は加熱ヘッド、4はICチップ、5はICチップ
の電極パッド、6はバンプ(突出接点)、図2(a)(
b)において、7はAu厚膜電極、8はセラミック基板
、9は加熱ヘッドである。
In FIG. 1, 1 is a supporting base material having a concave portion, 2 is a metal ball whose main component is a low melting point alloy or metal, 3 is a heating head, 4 is an IC chip, 5 is an electrode pad of the IC chip, 6 is a bump (protruding contact), Fig. 2(a) (
In b), 7 is an Au thick film electrode, 8 is a ceramic substrate, and 9 is a heating head.

【0010】本発明の第1の実施例では、まず図1(a
)に示すように低融点合金または金属を主成分とする金
属ボール2を支持基材1の表面に設けられた凹部に充填
する。支持基材1はガラス基板を沸酸水溶液中でエッチ
ングして100μm□深さ50μmの凹部設けたものを
使用し、低融点合金または金属を主成分とする金属ボー
ル2としては50〜70μmの粒子からなる共晶半田ボ
ールを使用した。次に図1(b)に示すように加熱ヘッ
ド3を用いて支持基材1を230℃に加熱し、充填され
た前記金属ボール2を溶融し、図に示すように電極パッ
ド5を金属ボール2と対向させて圧着すると、図1(c
)に示すように電極パッド6上のみに低融点合金または
金属からなる金属ボール2が転写され、電気的接続接点
6が一括形成される。また、図2(a)(b)に示すよ
うに第1の実施例で得たICチップ4の電極パッド5上
に低融点合金または金属2からなる電気的接続接点6と
セラミック基板8上のAu厚膜電極7とを対向させ圧着
した後、加熱ヘッド9によって突出接点6を再溶融させ
て固着すると、ICチップとセラミック基板上のAu厚
膜電極との接続ができる。
In the first embodiment of the present invention, first, FIG.
), metal balls 2 whose main component is a low melting point alloy or metal are filled into the recesses provided on the surface of the support base material 1. The supporting base material 1 is a glass substrate etched in a hydrofluoric acid aqueous solution to provide a recess of 100 μm □ 50 μm deep, and the metal balls 2 whose main component is a low melting point alloy or metal are particles of 50 to 70 μm. A eutectic solder ball consisting of Next, as shown in FIG. 1(b), the supporting base material 1 is heated to 230° C. using the heating head 3, the filled metal balls 2 are melted, and the electrode pads 5 are connected to the metal balls as shown in the figure. 1 (c) when crimped against 2
), the metal balls 2 made of a low melting point alloy or metal are transferred only onto the electrode pads 6, and the electrical connection contacts 6 are formed at once. Further, as shown in FIGS. 2(a) and 2(b), electrical connection contacts 6 made of a low melting point alloy or metal 2 are placed on the electrode pads 5 of the IC chip 4 obtained in the first example, and After the Au thick film electrodes 7 are pressed against each other and the protruding contacts 6 are remelted and fixed by the heating head 9, the IC chip and the Au thick film electrodes on the ceramic substrate can be connected.

【0011】次に本発明の第2の実施例を示す。図3(
a)から(e)は本発明の第2の実施例を示す工程断面
図である。10は2段突起状突出接点であり、図3(a
)から(c)は支持基材1に設けた凹部中の溶融した低
融点合金または金属ボール2を2段突起状突出接点上に
転写した工程を示す。この2段突起状突出接点10はワ
イヤボンディング装置を用いてキャピラリをループ状の
軌跡を描きループ状の2段突起構造とした。図3(d)
から(e)には図3(a)から(c)で得た2段突起状
突出接点を用いた本発明の電気接続接点を使用した実装
工程断面図を示す。
Next, a second embodiment of the present invention will be described. Figure 3 (
(a) to (e) are process cross-sectional views showing a second embodiment of the present invention. 10 is a two-stage protruding contact, as shown in Fig. 3(a).
) to (c) show the steps of transferring the molten low-melting point alloy or metal ball 2 in the recess provided in the support base material 1 onto the two-stage protruding contact. This two-stage protruding contact 10 was formed into a loop-shaped two-stage protruding structure by drawing a loop-like locus on the capillary using a wire bonding device. Figure 3(d)
3(e) are cross-sectional views of the mounting process using the electrical connection contact of the present invention using the two-stage protruding contact obtained in FIGS. 3(a) to 3(c).

【0012】なお、上記実施例においては、電気的接続
接点が形成されたICチップ4をセラミック基板8に実
装した例を示したが、ICチップを実装する基板はセラ
ミック基板に限定されるものではなく、たとえばガラス
エポキシの基板、ガラス基板、およびフレキシブルプリ
ント基板等でもよいことは云うまでもない。低融点合金
または金属を主成分とする金属ボール2としては直径5
0〜70μmの粒子からなる共晶半田ボールを使用した
が、材質としては鉛(Pb)、錫(Sn)、インジウム
(In)を主とする合金またはその単体、あるいはAu
−Sn20%、Au−Sn90%等の低融点合金または
金属でもよく、ボールを加熱して金属ボールを形成した
時点で、前記金属ボールの直径が前記支持基材表面に設
けられた凹部の深さより大であるように調整された金属
ボールであれば何でもよい。さらにICチップ上の電極
パッドと溶融して形成した金属ボールとを対向させて圧
着した場合に超音波加振やスクラブ(微小摺動)を加え
るとICチップと金属ボールとの接続が確実となる。
[0012] In the above embodiment, an example was shown in which the IC chip 4 on which electrical connection contacts were formed was mounted on the ceramic substrate 8, but the substrate on which the IC chip is mounted is not limited to a ceramic substrate. Needless to say, for example, a glass epoxy substrate, a glass substrate, a flexible printed circuit board, etc. may be used. The metal ball 2 whose main component is a low melting point alloy or metal has a diameter of 5.
We used eutectic solder balls consisting of particles of 0 to 70 μm, but the material was alloys mainly consisting of lead (Pb), tin (Sn), and indium (In), or their single substances, or Au.
- It may be a low melting point alloy or metal such as 20% Sn or 90% Au-Sn, and when the ball is heated to form a metal ball, the diameter of the metal ball is larger than the depth of the recess provided on the surface of the support base material. Any metal ball that is adjusted to be large may be used. Furthermore, when the electrode pads on the IC chip and the metal ball formed by melting are pressed against each other, applying ultrasonic vibration or scrubbing (micro-sliding) will ensure the connection between the IC chip and the metal ball. .

【0013】また、凹部を有する支持基材としてガラス
を用いたが、他の材質のものでも良く、例えば、ステン
レス板をエッチングし、表面にTiCなどのセラミック
コートをかけて用いることも可能である。さらに金属ボ
ール形成時や、突出接点を再溶融してICチップを基板
上に実装する場合の雰囲気は空気中のみならず、窒素雰
囲気や、水素を用いた還元性雰囲気なども用いることが
できる。また、本実施例ではフラックス塗布は行ってい
ないが、工程の必要段階でフラックス塗布することも何
等限定しない。
Further, although glass is used as the support base material having the recessed portions, other materials may be used. For example, it is also possible to use a stainless steel plate etched and coated with a ceramic coating such as TiC on the surface. . Further, the atmosphere when forming the metal balls or when mounting the IC chip on the substrate by remelting the protruding contacts is not limited to air, but may also be a nitrogen atmosphere, a reducing atmosphere using hydrogen, or the like. Furthermore, although flux application is not performed in this embodiment, there is no limitation in any way to applying flux at a necessary stage of the process.

【0014】[0014]

【発明の効果】以上に説明したように、本発明の電気的
接続接点の形成方法によれば、ICチップの電極パッド
部に電気的接続接点を、選択的に精度よく低融点合金ま
たは金属からなる金属ボールを転写することにより容易
に一括形成することができ、ICチップのセラミック基
板上の電極への接続に限らず、各種基板への電気的接続
において、従来困難な超微細接続に効果を発揮するので
、きわめて実用価値が高い。また、本発明の電気的接続
接点を用いて接続実装した基板はICチップ周辺のリー
ドもなく実装用基板面積を有効かつ最小に利用すること
が可能となる。
As explained above, according to the method for forming electrical connection contacts of the present invention, electrical connection contacts can be formed selectively and precisely from low melting point alloys or metals on the electrode pads of IC chips. It can be easily formed all at once by transferring metal balls, and it is effective not only for connecting IC chips to electrodes on ceramic substrates, but also for electrical connections to various substrates, which are conventionally difficult to make ultra-fine connections. It has extremely high practical value. Moreover, the board mounted using the electrical connection contact of the present invention has no leads around the IC chip, and the mounting board area can be effectively and minimized.

【図面の簡単な説明】[Brief explanation of the drawing]

【図1】本発明の第1の実施例を示す工程断面図[Fig. 1] Process cross-sectional diagram showing a first embodiment of the present invention.

【図2
】本発明の第1の実施例を示す実装工程断面図
[Figure 2
】Cross-sectional view of the mounting process showing the first embodiment of the present invention

【図3】
本発明の第2の実施例を示す工程断面図
[Figure 3]
Process cross-sectional diagram showing the second embodiment of the present invention

【符号の説明】[Explanation of symbols]

1  支持基材 2  低融点合金または金属を主成分とする金属ボール
3  加熱ヘッド 4  ICチップ 5  ICチップの電極パッド 6  バンプ(突出接点) 7  Au厚膜電極 8  セラミック基板 9  加熱ヘッド 10  2段突起状突出接点
1 Support base material 2 Metal ball mainly composed of a low melting point alloy or metal 3 Heating head 4 IC chip 5 Electrode pad of IC chip 6 Bump (protruding contact) 7 Au thick film electrode 8 Ceramic substrate 9 Heating head 10 Two-stage protrusion shaped protruding contact

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】  低融点合金または金属を主成分とする
金属ボールを支持基材表面に設けられた凹部に充填する
工程、基板の微細端子電極面を前記凹部中の前記金属ボ
ールに合わせて圧着して前記金属ボールを前記微細端子
電極面上に転写する工程より構成されることを特徴とす
る電気的接続接点の形成方法。
1. A step of filling a recess provided on the surface of a supporting base material with a metal ball whose main component is a low melting point alloy or metal, and crimping the fine terminal electrode surface of the substrate to the metal ball in the recess. A method for forming an electrical connection contact, comprising the step of transferring the metal ball onto the surface of the fine terminal electrode.
【請求項2】  微細端子電極群を有する基板、支持基
材の少なくとも1種を加熱しつつ、前記基板上微細端子
電極面を前記凹部中に充填した金属ボールに合わせて圧
着して前記金属ボールを前記微細端子電極上のみに転写
する工程より構成されることを特徴とする請求項1記載
の電気的接続接点の形成方法。
2. While heating at least one of a substrate having a group of fine terminal electrodes and a support base material, the surface of the fine terminal electrodes on the substrate is pressed against the metal balls filled in the recesses, thereby forming the metal balls. 2. The method of forming an electrical connection contact according to claim 1, further comprising a step of transferring only onto said fine terminal electrode.
【請求項3】  基板上の微細端子電極面を前記凹部中
に充填した金属ボールに合わせて圧着しつつ、超音波加
振、スクラブ(微小摺動)の少なくとも1種を加えるこ
とを特徴とする請求項1記載の電気的接続接点の形成方
法。
3. At least one of ultrasonic vibration and scrubbing (micro-sliding) is applied while the fine terminal electrode surface on the substrate is pressed against the metal ball filled in the recess. A method for forming an electrical connection contact according to claim 1.
【請求項4】  低融点合金または金属を主成分とする
前記金属ボールの直径が前記支持基材表面に設けられた
凹部の深さより大であるように調整された前記金属ボー
ルを用いることを特徴とする請求項1記載の電気的接続
接点の形成方法。
4. The method is characterized in that the metal ball is adjusted such that the diameter of the metal ball whose main component is a low melting point alloy or metal is larger than the depth of the recess provided on the surface of the support base material. The method of forming an electrical connection contact according to claim 1.
【請求項5】  低融点合金または金属を主成分とする
金属ボールを支持基材表面に設けられた凹部に充填する
工程、微細端子電極群上に突出接点が形成された基板の
突出接点面を前記金属ボールに合わせて圧着して前記金
属ボールを前記微細端子電極群上の突出接点上に転写す
る工程より構成されることを特徴とする電気的接続接点
の形成方法。
5. Filling the recesses provided on the surface of the supporting base material with metal balls whose main component is a low-melting point alloy or metal; A method for forming an electrical connection contact, comprising the step of transferring the metal ball onto the protruding contact on the fine terminal electrode group by pressing the metal ball in accordance with the metal ball.
【請求項6】  低融点合金または金属を主成分とする
金属ボールを支持基材表面に設けられた凹部に充填する
工程、基板の微細端子電極面を前記凹部中の前記金属ボ
ールに合わせて圧着して前記金属ボールを前記微細端子
電極面上に転写する工程、前記微細端子電極面上に形成
された突出電極を再溶融して他の基板上の電極群と接続
する工程より構成されることを特徴とする実装基板の製
造方法。
6. A step of filling a recess provided on the surface of a supporting base material with a metal ball whose main component is a low melting point alloy or metal, and crimping the fine terminal electrode surface of the substrate to the metal ball in the recess. and transferring the metal ball onto the fine terminal electrode surface, and remelting the protruding electrode formed on the fine terminal electrode surface and connecting it to an electrode group on another substrate. A method for manufacturing a mounting board characterized by:
【請求項7】  低融点合金または金属を主成分とする
金属ボールを支持基材表面に設けられた凹部に充填する
工程、微細端子電極群上に突出接点が形成された基板の
突出接点面を前記凹部中の前記金属ボールに合わせて圧
着して前記金属ボールを前記微細端子電極面上に転写す
る工程、前記微細端子電極面上に形成された突出電極を
再溶融して他の基板上の電極群と接続する工程より構成
されることを特徴とする実装基板の製造方法。
7. Filling the recesses provided on the surface of the supporting base material with metal balls whose main component is a low melting point alloy or metal, the protruding contact surface of the substrate on which the protruding contacts are formed on the micro terminal electrode group. Transferring the metal ball onto the fine terminal electrode surface by crimping the metal ball in the recess, remelting the protruding electrode formed on the fine terminal electrode surface and transferring the metal ball onto another substrate. A method for manufacturing a mounting board, comprising a step of connecting to an electrode group.
JP3024426A 1991-02-19 1991-02-19 Method of forming electrical connection contact and method of mounting electronic component Expired - Fee Related JP2650499B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3024426A JP2650499B2 (en) 1991-02-19 1991-02-19 Method of forming electrical connection contact and method of mounting electronic component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3024426A JP2650499B2 (en) 1991-02-19 1991-02-19 Method of forming electrical connection contact and method of mounting electronic component

Publications (2)

Publication Number Publication Date
JPH04263434A true JPH04263434A (en) 1992-09-18
JP2650499B2 JP2650499B2 (en) 1997-09-03

Family

ID=12137827

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP2650499B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0917794A (en) * 1995-06-30 1997-01-17 Nec Corp Bump forming method
US5643831A (en) * 1994-01-20 1997-07-01 Fujitsu Limited Process for forming solder balls on a plate having apertures using solder paste and transferring the solder balls to semiconductor device
US5959346A (en) * 1996-11-11 1999-09-28 Fujitsu Limited Method for fabricating metal bumps onto electronic device
US6025258A (en) * 1994-01-20 2000-02-15 Fujitsu Limited Method for fabricating solder bumps by forming solder balls with a solder ball forming member
US6271110B1 (en) 1994-01-20 2001-08-07 Fujitsu Limited Bump-forming method using two plates and electronic device
US6319810B1 (en) 1994-01-20 2001-11-20 Fujitsu Limited Method for forming solder bumps
US6528346B2 (en) 1994-01-20 2003-03-04 Fujitsu Limited Bump-forming method using two plates and electronic device
JP2008187211A (en) * 1996-08-27 2008-08-14 Nippon Steel Materials Co Ltd Semiconductor device with low melting point metal bump and method for flip-chip bonding

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59148352A (en) * 1983-02-14 1984-08-25 Seiko Instr & Electronics Ltd Electrode formation for semiconductor device
JPS6225435A (en) * 1985-07-25 1987-02-03 Ikeda Jido Kiki Kk Formation of boding bump
JPS645039A (en) * 1987-06-27 1989-01-10 Nippon Denso Co Manufacture of protruding electrode
JPH0230140A (en) * 1988-07-20 1990-01-31 Fujitsu Ltd Structure of solder ball sheet and method of forming solder bumps
JPH02312240A (en) * 1989-05-26 1990-12-27 Ricoh Co Ltd Formation of bump

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59148352A (en) * 1983-02-14 1984-08-25 Seiko Instr & Electronics Ltd Electrode formation for semiconductor device
JPS6225435A (en) * 1985-07-25 1987-02-03 Ikeda Jido Kiki Kk Formation of boding bump
JPS645039A (en) * 1987-06-27 1989-01-10 Nippon Denso Co Manufacture of protruding electrode
JPH0230140A (en) * 1988-07-20 1990-01-31 Fujitsu Ltd Structure of solder ball sheet and method of forming solder bumps
JPH02312240A (en) * 1989-05-26 1990-12-27 Ricoh Co Ltd Formation of bump

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5643831A (en) * 1994-01-20 1997-07-01 Fujitsu Limited Process for forming solder balls on a plate having apertures using solder paste and transferring the solder balls to semiconductor device
US6025258A (en) * 1994-01-20 2000-02-15 Fujitsu Limited Method for fabricating solder bumps by forming solder balls with a solder ball forming member
US6271110B1 (en) 1994-01-20 2001-08-07 Fujitsu Limited Bump-forming method using two plates and electronic device
US6319810B1 (en) 1994-01-20 2001-11-20 Fujitsu Limited Method for forming solder bumps
US6528346B2 (en) 1994-01-20 2003-03-04 Fujitsu Limited Bump-forming method using two plates and electronic device
JPH0917794A (en) * 1995-06-30 1997-01-17 Nec Corp Bump forming method
JP2008187211A (en) * 1996-08-27 2008-08-14 Nippon Steel Materials Co Ltd Semiconductor device with low melting point metal bump and method for flip-chip bonding
US5959346A (en) * 1996-11-11 1999-09-28 Fujitsu Limited Method for fabricating metal bumps onto electronic device

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