JPH04246876A - Semiconductor laser element - Google Patents

Abstract

PURPOSE:To enable a semiconductor laser element to be enhanced in temperature characteristics and reliability by a method wherein a heat sink is enlarged in heat dissipating area to be enhanced in heat dissipating properties. CONSTITUTION:A semiconductor laser chip is fusion-welded so as to enable its light emitting part which releases heat to be located near a heat sink, and the heat sink is buried in a carrier 4 which fixes the heat sink so as to enable the heat sink to be enhanced in surface area and heat dissipating properties.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser device.

0002

2. Description of the Related Art As shown in FIG. 3, a conventional semiconductor laser device is manufactured by fusing a semiconductor laser chip 1 onto a heat sink 3 using a solder, and then fusing the heat sink 3 onto a carrier 4 using a solder. was.

In this structure, the heat generated in the light emitting section 2 is transmitted through the contact surface between the semiconductor laser chip electrode surface and the heat sink 3, and the contact surface between the upper surface of the carrier 4 and the heat sink, and is released.

0004

In this conventional semiconductor laser element, heat generated in the light emitting part is dissipated through the contact surfaces between the semiconductor laser chip electrode section and the heat sink, and between the heat sink and the upper surface of the carrier.

Therefore, the heat dissipation area is small and the heat dissipation effect is poor, resulting in a disadvantage that the temperature characteristics of the semiconductor laser device are deteriorated and reliability is adversely affected.

[0006]

[Means for Solving the Problems] The semiconductor laser device of the present invention has a structure in which a recess is provided at the center of the carrier and the heat sink is embedded in the recess of the carrier so that only the upper surface of the heat sink is exposed. As a result, the heat dissipation area of the heat sink increases, the heat dissipation effect is improved, the thermal resistance can be reduced, and the temperature characteristics and reliability of the semiconductor laser device are improved.

[0007]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be explained with reference to the drawings. FIG. 1(a) is a perspective view of a semiconductor laser device according to an embodiment of the present invention, and FIG. 1(b) is a front view of the semiconductor laser device according to the present invention.

Semiconductor laser chip 1 is placed on heat sink 3
The heat sink 3 to which the semiconductor laser chip 1 is fused is assembled into the recessed portion at the center of the carrier 4 and fused using solder.

[0009] Thereby, the heat dissipation area of the heat sink 3 can be expanded. Therefore, there are advantages in that the heat dissipation effect is excellent, the thermal resistance of the semiconductor laser device can be reduced, and the temperature characteristics and reliability of the semiconductor laser device can be improved.

For example, in the case of the heat sink shown in FIG. 1(a), where one side is L mm and the thickness is L/2 mm, the ratio of the heat dissipation area between the present invention and the conventional one is (present invention/conventional) = 2.5 L2 /
L2, that is, the heat dissipation area is 2.5 times that of the conventional one,
Improves heat dissipation effect.

FIG. 2 is a front view of a semiconductor laser device according to another embodiment of the present invention.

When the semiconductor laser chip 1 is junction-up bonded to the heat sink 3 using solder, a recess is provided in the center of the heat sink 3 in order to bring the light emitting part 2 closer to the heat sink 3, and the semiconductor laser chip is inserted into this recess. A heat sink with the semiconductor laser chip 1 embedded therein and fused thereto is incorporated into the recess at the center of the carrier 4 and fused using solder.

[0013] Thereby, the heat dissipation area of the heat sink 3 can be expanded.

[0014] Therefore, there are advantages in that the heat dissipation effect is excellent, the temperature characteristics of the semiconductor laser device can be improved, and the reliability can be improved.

[0015]

Effects of the Invention As explained above, the semiconductor laser device of the present invention can increase the heat radiation area of the heat sink by providing a recess in the center of the carrier and incorporating the heat sink so that only the top surface of the heat sink is exposed. This has the effect of improving the thermal resistance and reducing the thermal resistance, thereby improving the temperature characteristics and reliability of the semiconductor laser device.

[Brief explanation of the drawing]

FIG. 1 is a perspective view and a front view of a semiconductor laser device according to a first embodiment of the present invention.

FIG. 2 is a front view of a semiconductor laser device according to a second embodiment of the present invention.

FIG. 3 is a front view of a semiconductor laser device according to a conventional example.

[Explanation of symbols]

1 Semiconductor laser chip 2　　　　Light emitting part 3 Heat sink 4 Carrier (package)

Claims (1)

[Claims] Claim 1: A heat source generated in a light emitting part of a semiconductor laser chip is fused so as to be placed near a heat sink,
A semiconductor laser device characterized in that this heat sink is embedded in a carrier that is a fixing material for the heat sink.