JPH04238805A - Production of high-purity chlorosilane - Google Patents
Production of high-purity chlorosilaneInfo
- Publication number
- JPH04238805A JPH04238805A JP1385291A JP1385291A JPH04238805A JP H04238805 A JPH04238805 A JP H04238805A JP 1385291 A JP1385291 A JP 1385291A JP 1385291 A JP1385291 A JP 1385291A JP H04238805 A JPH04238805 A JP H04238805A
- Authority
- JP
- Japan
- Prior art keywords
- chlorosilane
- silicon
- methylchlorosilanes
- carbon content
- hydrogen chloride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000005046 Chlorosilane Substances 0.000 title claims abstract description 26
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 25
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims abstract description 12
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims abstract description 12
- YGZSVWMBUCGDCV-UHFFFAOYSA-N chloro(methyl)silane Chemical class C[SiH2]Cl YGZSVWMBUCGDCV-UHFFFAOYSA-N 0.000 abstract description 21
- 229910052710 silicon Inorganic materials 0.000 abstract description 21
- 239000010703 silicon Substances 0.000 abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 239000011863 silicon-based powder Substances 0.000 abstract description 3
- 239000007795 chemical reaction product Substances 0.000 abstract description 2
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical class [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 abstract 1
- 239000002994 raw material Substances 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000009835 boiling Methods 0.000 description 8
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 7
- 239000005049 silicon tetrachloride Substances 0.000 description 7
- 239000006227 byproduct Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000000746 purification Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000003575 carbonaceous material Substances 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 3
- 239000005052 trichlorosilane Substances 0.000 description 3
- -1 and in this reaction Chemical compound 0.000 description 2
- NEHMKBQYUWJMIP-UHFFFAOYSA-N chloromethane Chemical compound ClC NEHMKBQYUWJMIP-UHFFFAOYSA-N 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- OEMKCHJUXPTUHW-UHFFFAOYSA-N 1-methyl-4-[2,2,2-trichloro-1-(4-methylphenyl)ethyl]benzene Chemical compound C1=CC(C)=CC=C1C(C(Cl)(Cl)Cl)C1=CC=C(C)C=C1 OEMKCHJUXPTUHW-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 1
- 229910003822 SiHCl3 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- KTQYJQFGNYHXMB-UHFFFAOYSA-N dichloro(methyl)silicon Chemical compound C[Si](Cl)Cl KTQYJQFGNYHXMB-UHFFFAOYSA-N 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229940050176 methyl chloride Drugs 0.000 description 1
- 239000005055 methyl trichlorosilane Substances 0.000 description 1
- 239000005048 methyldichlorosilane Substances 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
Landscapes
- Manufacture, Treatment Of Glass Fibers (AREA)
- Silicon Compounds (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、メチルクロルシランを
実質的に含有しない高純度のクロルシラン類を製造する
方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing highly purified chlorosilanes that do not substantially contain methylchlorosilane.
【０００２】0002
【従来の技術】トリクロルシランや四塩化ケイ素等のク
ロルシラン類は、窒化ケイ素や種々の有機ケイ素化合物
の合成原料、更には合成石英や半導体シリコンの原料と
して重要である。BACKGROUND OF THE INVENTION Chlorosilanes such as trichlorosilane and silicon tetrachloride are important as raw materials for the synthesis of silicon nitride and various organosilicon compounds, and also as raw materials for synthetic quartz and semiconductor silicon.
【０００３】かかるクロルシラン類は、従来主に金属ケ
イ素と塩化水素とを反応させて合成されており、この反
応ではトリクロルシランＳｉＨＣｌ３（沸点３２℃）、
四塩化ケイ素ＳｉＣｌ４（沸点５７℃）が主成分として
生成し、ジクロルシランＳｉＨ２Ｃｌ２（沸点８℃）は
１０％以下の組成となるが、このようなクロルシラン類
の生成と共に数十〜数百ｐｐｍのメチルクロルシラン類
が副生してしまうという問題がある。このメチルクロル
シラン類は、次に沸点を示したように、特に四塩化ケイ
素と沸点が近接しているため除去することが困難であり
、このため高純度の四塩化ケイ素を得ることが困難であ
った。[0003] Such chlorosilanes have conventionally been synthesized mainly by reacting metal silicon with hydrogen chloride, and in this reaction, trichlorosilane SiHCl3 (boiling point 32°C),
Silicon tetrachloride SiCl4 (boiling point 57°C) is produced as the main component, and dichlorosilane SiH2Cl2 (boiling point 8°C) has a composition of 10% or less, but along with the production of such chlorosilanes, tens to hundreds of ppm of methylchlor There is a problem that silanes are produced as a by-product. These methylchlorosilanes are difficult to remove because their boiling points are particularly close to silicon tetrachloride, as shown below, and for this reason it is difficult to obtain high purity silicon tetrachloride. there were.
【０００４】
ＨＳｉＣＨ３Ｃｌ２ メチルジ
クロルシラン 沸点 ４２℃ Ｓｉ
ＣＨ３Ｃｌ３ メトルトリクロルシ
ラン 沸点 ６６℃ Ｓｉ（ＣＨ３）２
Ｃｌ２ ジメチルジクロルシラン 沸点
７０℃ Ｓｉ（ＣＨ３）３Ｃｌ
トリメチルクロルシラン 沸点 ５８℃HSiCH3Cl2 Methyldichlorosilane Boiling point 42°C Si
CH3Cl3 Methyltrichlorosilane Boiling point 66℃ Si(CH3)2
Cl2 Dimethyldichlorosilane Boiling point 70℃ Si(CH3)3Cl
Trimethylchlorosilane Boiling point 58℃
【００
０５】00
05]
【発明が解決しようとする課題】しかし、メチルクロル
シラン類を不純物として含むクロルシランを原料に用い
た場合には種々の不都合が生じてしまう。例えば四塩化
ケイ素を光ファイバー用原料として用いた場合には、メ
チルクロルシラン類に由来する極く微量の炭素の存在が
光伝送特性に影響を与えたり、あるいはトリクロルシラ
ンをＳｉ多結晶ないしはエピタキシャル原料として用い
た場合には、やはりメチルクロルシラン類に由来する極
く微量の炭素の存在がデバイスの電気特性に影響を与え
るおそれがある。従って、これらの用途にはメチルクロ
ルシラン類の含有量が１ｐｐｍ以下であり、実質的にメ
チルクロルシラン類を含まないものであることが要望さ
れている。However, when chlorosilane containing methylchlorosilanes as impurities is used as a raw material, various disadvantages arise. For example, when silicon tetrachloride is used as a raw material for optical fibers, the presence of extremely small amounts of carbon derived from methylchlorosilanes may affect optical transmission characteristics, or trichlorosilane may be used as a raw material for Si polycrystals or epitaxial materials. When used, there is a possibility that the presence of a very small amount of carbon derived from methylchlorosilanes may affect the electrical characteristics of the device. Therefore, for these uses, it is desired that the content of methylchlorosilanes is 1 ppm or less, and that it is substantially free of methylchlorosilanes.
【０００６】なお、本発明者らは、既にメチルクロルシ
ラン類の副生が避け難いものとしてその除去方法に関し
て四塩化ケイ素を対象としたメチルクロルシラン類の除
去方法を提案した。この方法は高純度の四塩化ケイ素を
得ることができる精製方法であるが、このような精製を
行なうことなく、金属ケイ素と塩化水素との反応により
直接高純度のクロルシラン類を得ることが更に望まれる
。[0006] The present inventors have already proposed a method for removing methylchlorosilanes from silicon tetrachloride, since the by-product of methylchlorosilanes is unavoidable. Although this method is a purification method that can obtain high-purity silicon tetrachloride, it is even more desirable to directly obtain high-purity chlorosilanes by reacting metallic silicon with hydrogen chloride without performing such purification. It will be done.
【０００７】本発明は上記事情に鑑みなされたもので、
金属ケイ素と塩化水素とからクロルシランを製造する方
法において、実質的にメチルクロルシラン類が副生せず
精製工程を省略乃至は簡略化することができて、コスト
的に有利な高純度クロルシランの製造方法を提供するこ
とを目的とする。[0007] The present invention has been made in view of the above circumstances.
In a method for producing chlorosilane from metallic silicon and hydrogen chloride, production of high-purity chlorosilane is advantageous in terms of cost, in which methylchlorosilanes are not substantially produced as by-products and purification steps can be omitted or simplified. The purpose is to provide a method.
【０００８】[0008]
【課題を解決するための手段及び作用】本発明者らは上
記目的を達成するため鋭意検討を重ねた結果、原料の工
業用金属ケイ素中に含まれる炭素が金属ケイ素と塩酸と
の反応に際し、その機構は不明であるが、塩酸と反応し
てメチルクロルシラン類に変換し、金属ケイ素中の炭素
量がメチルクロルシランの発生量と密接に関連している
ことを知見した。そして更に検討を進めた結果、クロル
シラン用原料の金属ケイ素として炭素含有量が５０ｐｐ
ｍ以下のものを用いることにより、メチルクロルシラン
類の含有量が１ｐｐｍ以下の実質的にメチルクロルシラ
ン類を含まない高純度のクロルシランを製造でき、従っ
て、後の精製工程を省略乃至は簡略化することができ、
コスト的に有利な高純度クロルシランの製造方法である
ことを見い出し、本発明をなすに至ったものである。[Means and effects for solving the problem] As a result of intensive studies to achieve the above object, the present inventors have found that carbon contained in the raw material industrial metal silicon reacts with metal silicon and hydrochloric acid. Although the mechanism is unknown, it was found that it reacts with hydrochloric acid and converts into methylchlorosilanes, and that the amount of carbon in metal silicon is closely related to the amount of methylchlorosilane generated. As a result of further investigation, we found that the carbon content of the metallic silicon used as the raw material for chlorosilane was 50pp.
By using methylchlorosilanes of 1 ppm or less, it is possible to produce high-purity chlorosilanes that are substantially free of methylchlorosilanes, thereby omitting or simplifying subsequent purification steps. can,
We have discovered that this is a cost-effective method for producing high-purity chlorosilane, and have come up with the present invention.
【０００９】従って、本発明は金属ケイ素と塩化水素と
からクロルシランを製造する方法において、金属ケイ素
として炭素含有量が５０ｐｐｍ以下のものを用いること
を特徴とする高純度クロルシランの製造方法を提供する
。Accordingly, the present invention provides a method for producing high-purity chlorosilane from silicon metal and hydrogen chloride, which is characterized in that silicon metal has a carbon content of 50 ppm or less.
【００１０】以下、本発明について更に詳しく説明する
と、本発明は上述したように金属ケイ素と塩化水素から
クロルシランを製造する方法において、炭素含有量が５
０ｐｐｍ以下、好ましくは３０ｐｐｍ以下の金属ケイ素
を用いるものである。炭素含有量が５０ｐｐｍを超える
金属ケイ素を用いる場合には、メチルクロルシラン類の
含有量が１ｐｐｍ以下のクロルシランを得ることができ
ず、光ファイバ用やＳｉ多結晶あるいはエピタキシャル
原料として好適なクロルシランを得ることができない。
なお、本発明の金属ケイ素中の炭素含有量は、高温Ｏ２
燃焼−非分散赤外分析による市販の炭素分析装置により
、炭素の化学形態によらずトータルカーボン量として測
定、定量される値である。[0010] The present invention will be explained in more detail below. As described above, the present invention provides a method for producing chlorosilane from metallic silicon and hydrogen chloride, in which the carbon content is 5.
0 ppm or less, preferably 30 ppm or less of metallic silicon is used. When using metallic silicon with a carbon content exceeding 50 ppm, it is not possible to obtain chlorosilane with a content of methylchlorosilanes of 1 ppm or less, and chlorosilane suitable for use in optical fibers or as a Si polycrystal or epitaxial raw material can be obtained. I can't. Note that the carbon content in the metal silicon of the present invention is
This value is measured and quantified as the total amount of carbon, regardless of the chemical form of carbon, using a commercially available carbon analyzer using combustion-non-dispersive infrared analysis.
【００１１】即ち、クロルシラン製造用原料である工業
用金属ケイ素は通常ケイ石の炭材による電炉還元で製造
され、この際用いられた炭材の微少量が金属ケイ素中に
残留し、通常の工業用金属ケイ素中の炭素含有量は数百
〜数千ｐｐｍであるが、このような金属ケイ素をクロル
シラン原料として用いた場合には、比較例で示したよう
に数十〜数百ｐｐｍのメチルクロルシランの副生は避け
得ない。なお、金属ケイ素中の炭素の存在形態はフリー
の炭素なのか、ＳｉＣ等の化合物であるのか不明である
が、通常の製造ではＳｉＣスラグの発生を伴うことから
ＳｉＣ等の可能性が高い。In other words, industrial silicon metal, which is a raw material for producing chlorosilane, is usually produced by electric furnace reduction of silica stone with carbonaceous material, and a small amount of the carbonaceous material used at this time remains in the metallic silicon, which is The carbon content in silicon metal for use is several hundred to several thousand ppm, but when such metal silicon is used as a raw material for chlorosilane, as shown in the comparative example, the carbon content is from several tens to several hundred ppm of methyl chloride. Silane by-products are unavoidable. It is unknown whether the carbon in metal silicon is free carbon or a compound such as SiC, but it is likely to be SiC or the like since SiC slag is generated in normal manufacturing.
【００１２】本発明で用いる炭素含有量が５０ｐｐｍ以
下の金属ケイ素を工業的に得るには、電炉操業条件の適
正化、例えば温度、炭材種、あるいは酸素を吹き込むな
どの方法により可能である。[0012] Metallic silicon having a carbon content of 50 ppm or less used in the present invention can be obtained industrially by optimizing the operating conditions of the electric furnace, such as by adjusting the temperature, the type of carbon material, or by blowing oxygen into the electric furnace.
【００１３】本発明において、金属ケイ素と塩化水素と
の反応は、原料金属ケイ素として炭素含有量が５０ｐｐ
ｍ以下のものを用いる以外は通常のクロルシラン製造条
件と同一の条件を採用し得、一般的に採用されている条
件、例えば反応温度は２５０℃〜４００℃、反応圧力は
常圧〜加圧下で行なうことができる。In the present invention, the reaction between metallic silicon and hydrogen chloride is carried out when the raw material metallic silicon has a carbon content of 50 ppp.
The same conditions as the usual chlorosilane production conditions can be adopted except for using chlorosilane of less than m. can be done.
【００１４】[0014]
【実施例】以下、実施例及び比較例を示し、本発明を具
体的に説明するが、本発明は下記の実施例に制限される
ものではない。
〔実施例１〕石英ガラス管（直径２０ｍｍ×長さ１００
０ｍｍ）にトータル炭素含有量が１０ｐｐｍの金属ケイ
素粉１００ｇを充填し、塩化水素を毎時７．５Ｎリット
ル供給しながら反応温度３６０℃にて６時間反応を行な
った。反応生成物は−６０℃でトラップし、その凝集液
をガスクロマトグラフにて分析した。その結果は、凝縮
液中にメチルクロルシラン類は検出されなかった（１ｐ
ｐｍ以下）。[Examples] The present invention will be specifically explained below with reference to Examples and Comparative Examples, but the present invention is not limited to the following Examples. [Example 1] Quartz glass tube (diameter 20 mm x length 100 mm)
0 mm) was filled with 100 g of metal silicon powder having a total carbon content of 10 ppm, and the reaction was carried out at a reaction temperature of 360° C. for 6 hours while supplying 7.5 N liters of hydrogen chloride per hour. The reaction product was trapped at -60°C, and the agglomerated liquid was analyzed using a gas chromatograph. The results showed that no methylchlorosilanes were detected in the condensate (1p
pm or less).
【００１５】〔比較例１〕トータル炭素含有量が７０ｐ
ｐｍの金属ケイ素粉１００ｇを使用し、実施例１と同様
に塩化水素を毎時７．５Ｎリットル供給し、反応温度３
５０℃にて８時間反応を行なった。凝縮液中のメチルク
ロルシラン類を分析したところ、５ｐｐｍであった。[Comparative Example 1] Total carbon content is 70p
Using 100 g of pm metal silicon powder, 7.5 N liters of hydrogen chloride was supplied per hour in the same manner as in Example 1, and the reaction temperature was 3.
The reaction was carried out at 50°C for 8 hours. Analysis of methylchlorosilanes in the condensate revealed that it was 5 ppm.
【００１６】〔比較例２，３〕下記に示すトータル炭素
含有量の金属ケイ素１００ｇを使用し、下記の反応温度
、反応時間とする以外は実施例１と同様の方法で反応を
行ない、凝縮液のメチルクロルシランをガスクロマトグ
ラフにて分析した。結果を下記に示す。[Comparative Examples 2 and 3] A reaction was carried out in the same manner as in Example 1 except that 100 g of metallic silicon having the total carbon content shown below was used, and the reaction temperature and reaction time were as shown below. Methylchlorosilane was analyzed using a gas chromatograph. The results are shown below.
【００１７】
比較例２
比較例３ トータル炭素含有量（ｐｐｍ）
２１０ ９１０
反応温度（℃）
３４０ ３５３ 反
応時間（ｈ）
６ ５
副生メチルクロルシラン類（ｐｐｍ）
１４ ７５２[0017]
Comparative example 2
Comparative Example 3 Total carbon content (ppm)
210 910
Reaction temperature (℃)
340 353 Reaction time (h)
6 5
By-product methylchlorosilanes (ppm)
14 752
【００１８】[0018]
【発明の効果】以上説明したように、本発明の高純度ク
ロルシランの製造方法によれば、金属ケイ素と塩化水素
とからクロルシランを製造するに際し、実質的にメチル
クロルシラン類が副生せず、容易に電子材料用や光ファ
イバー用等として有効な高純度のクロルシランを得るこ
とができ、後の精製工程を省略乃至は簡略化し得るので
、コスト的に有利である。As explained above, according to the method for producing high-purity chlorosilane of the present invention, when producing chlorosilane from metallic silicon and hydrogen chloride, substantially no methylchlorosilane is produced as a by-product. High purity chlorosilane useful for electronic materials, optical fibers, etc. can be easily obtained, and subsequent purification steps can be omitted or simplified, which is advantageous in terms of cost.
Claims (1)
ランを製造する方法において、金属ケイ素として炭素含
有量が５０ｐｐｍ以下のものを用いることを特徴とする
高純度クロルシランの製造方法。1. A method for producing high-purity chlorosilane from silicon metal and hydrogen chloride, characterized in that silicon metal has a carbon content of 50 ppm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03013852A JP3132016B2 (en) | 1991-01-11 | 1991-01-11 | Method for producing high-purity chlorosilane |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03013852A JP3132016B2 (en) | 1991-01-11 | 1991-01-11 | Method for producing high-purity chlorosilane |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04238805A true JPH04238805A (en) | 1992-08-26 |
| JP3132016B2 JP3132016B2 (en) | 2001-02-05 |
Family
ID=11844811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03013852A Expired - Fee Related JP3132016B2 (en) | 1991-01-11 | 1991-01-11 | Method for producing high-purity chlorosilane |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3132016B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007269679A (en) * | 2006-03-31 | 2007-10-18 | Sumitomo Titanium Corp | Method for producing high purity alkylsilane |
| JP2008137870A (en) * | 2006-12-05 | 2008-06-19 | Osaka Titanium Technologies Co Ltd | Method for producing chlorinated silicon |
| WO2020137853A1 (en) * | 2018-12-27 | 2020-07-02 | 株式会社トクヤマ | Chlorosilane manufacturing method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6608327B1 (en) | 1998-02-27 | 2003-08-19 | North Carolina State University | Gallium nitride semiconductor structure including laterally offset patterned layers |
-
1991
- 1991-01-11 JP JP03013852A patent/JP3132016B2/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007269679A (en) * | 2006-03-31 | 2007-10-18 | Sumitomo Titanium Corp | Method for producing high purity alkylsilane |
| JP2008137870A (en) * | 2006-12-05 | 2008-06-19 | Osaka Titanium Technologies Co Ltd | Method for producing chlorinated silicon |
| JP4664892B2 (en) * | 2006-12-05 | 2011-04-06 | 株式会社大阪チタニウムテクノロジーズ | Method for producing silicon chloride |
| WO2020137853A1 (en) * | 2018-12-27 | 2020-07-02 | 株式会社トクヤマ | Chlorosilane manufacturing method |
| KR20210107679A (en) * | 2018-12-27 | 2021-09-01 | 가부시키가이샤 도쿠야마 | Method for producing chlorosilanes |
| EP3885315A4 (en) * | 2018-12-27 | 2022-08-17 | Tokuyama Corporation | MANUFACTURING PROCESS FOR CHLORSILANE |
| TWI849026B (en) * | 2018-12-27 | 2024-07-21 | 日商德山股份有限公司 | Method for producing chlorosilanes |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3132016B2 (en) | 2001-02-05 |
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