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JPH0423828B2 - - Google Patents

Info

Publication number
JPH0423828B2
JPH0423828B2 JP57114717A JP11471782A JPH0423828B2 JP H0423828 B2 JPH0423828 B2 JP H0423828B2 JP 57114717 A JP57114717 A JP 57114717A JP 11471782 A JP11471782 A JP 11471782A JP H0423828 B2 JPH0423828 B2 JP H0423828B2
Authority
JP
Japan
Prior art keywords
nitride film
substrate
polycrystalline silicon
layer
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57114717A
Other languages
English (en)
Japanese (ja)
Other versions
JPS595645A (ja
Inventor
Nobuo Sasaki
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11471782A priority Critical patent/JPS595645A/ja
Publication of JPS595645A publication Critical patent/JPS595645A/ja
Publication of JPH0423828B2 publication Critical patent/JPH0423828B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76294—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using selective deposition of single crystal silicon, i.e. SEG techniques

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP11471782A 1982-07-01 1982-07-01 半導体装置の製造方法 Granted JPS595645A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11471782A JPS595645A (ja) 1982-07-01 1982-07-01 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11471782A JPS595645A (ja) 1982-07-01 1982-07-01 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS595645A JPS595645A (ja) 1984-01-12
JPH0423828B2 true JPH0423828B2 (de) 1992-04-23

Family

ID=14644852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11471782A Granted JPS595645A (ja) 1982-07-01 1982-07-01 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS595645A (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987001239A1 (en) * 1985-08-15 1987-02-26 Ncr Corporation Dielectric isolation structure for integrated circuits
JPS6450439A (en) * 1987-08-21 1989-02-27 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPH01169940A (ja) * 1987-12-24 1989-07-05 Mitsubishi Electric Corp 素子分離構造およびその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5444482A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Mos type semiconductor device and its manufacture
JPS5525499A (en) * 1978-08-10 1980-02-23 Eaton Corp Semiconductive polymer composition and electrical heating use thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5444482A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Mos type semiconductor device and its manufacture
JPS5525499A (en) * 1978-08-10 1980-02-23 Eaton Corp Semiconductive polymer composition and electrical heating use thereof

Also Published As

Publication number Publication date
JPS595645A (ja) 1984-01-12

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