JPH04225268A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH04225268A JPH04225268A JP2414445A JP41444590A JPH04225268A JP H04225268 A JPH04225268 A JP H04225268A JP 2414445 A JP2414445 A JP 2414445A JP 41444590 A JP41444590 A JP 41444590A JP H04225268 A JPH04225268 A JP H04225268A
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- envelope
- leads
- lead
- semiconductor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 230000007704 transition Effects 0.000 claims description 7
- 238000005452 bending Methods 0.000 abstract description 25
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 238000004299 exfoliation Methods 0.000 abstract 1
- 206010040844 Skin exfoliation Diseases 0.000 description 14
- 238000005336 cracking Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 238000010186 staining Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Lead Frames For Integrated Circuits (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
［発明の目的］ [Purpose of the invention]
【０００１】0001
【産業上の利用分野】本発明は、樹脂成形によって形成
した外囲器外に延出するように放熱板が設けられた半導
体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device provided with a heat sink extending outside an envelope formed by resin molding.
【０００２】0002
【従来の技術】従来より知られているように、外囲器を
シリコ−ン樹脂やエポキシ樹脂などで形成した半導体装
置は製造が容易な点から民生用の半導体装置等として多
量に使用されている。そして消費電力が数Ｗ程度となる
ものでは電気接続を行うリ−ドと同じ金属板のフレ−ム
を用いて広幅の放熱板を形成している。[Prior Art] As is known from the past, semiconductor devices whose envelopes are made of silicone resin, epoxy resin, etc. are used in large quantities as consumer semiconductor devices because they are easy to manufacture. There is. In devices whose power consumption is on the order of several watts, a wide heat sink is formed using a frame made of the same metal plate as the leads for electrical connection.
【０００３】以下従来の半導体装置の一つについて図５
及び図６を参照して説明する。図５は斜視図であり、図
６はリ−ドフレ−ムの平面図である。FIG. 5 shows one of the conventional semiconductor devices below.
This will be explained with reference to FIG. FIG. 5 is a perspective view, and FIG. 6 is a plan view of the lead frame.
【０００４】図において１は樹脂成形により略直方体に
形成された外囲器であり、この外囲器１の内部には、例
えば集積回路が形成された半導体チップ２が密封収納さ
れている。そして外囲器１の内部において、半導体チッ
プ２の端子とリ−ド３がボンディングワイヤによって電
気的に接続されており、さらに半導体チップ２とリ−ド
３よりも広い幅の放熱板４が熱的に接続されている。In the figure, reference numeral 1 denotes an envelope formed into a substantially rectangular parallelepiped by resin molding, and a semiconductor chip 2 on which, for example, an integrated circuit is formed is hermetically housed inside the envelope 1. Inside the envelope 1, the terminals of the semiconductor chip 2 and the leads 3 are electrically connected by bonding wires, and a heat sink 4, which is wider than the semiconductor chip 2 and the leads 3, is used to heat the connected.
【０００５】また、外囲器１の長手の側壁には、内部か
ら外部に向かって貫通するようにして複数のリ−ド３と
放熱板４が設けられている。そしてリ−ド３及び放熱板
４は、外囲器１から各々の延出部分３ａ，４ａがそれぞ
れ２カ所に曲部５ａ，５ｂ，６ａ，６ｂを持っており、
例えば配線基板等に表面実装できるように形成されてい
る。Further, a plurality of leads 3 and a heat sink 4 are provided on the longitudinal side wall of the envelope 1 so as to penetrate from the inside to the outside. The leads 3 and the heat sink 4 have respective extending portions 3a and 4a from the envelope 1 having curved portions 5a, 5b, 6a and 6b at two locations, respectively.
For example, it is formed so that it can be surface mounted on a wiring board or the like.
【０００６】このように構成される半導体装置の作成は
、リ−ド３及び放熱板４を同一の金属板にリ−ドフレ−
ム７として形成し、このリ−ドフレ−ム７に半導体チッ
プ２を接続した後に外囲器１を樹脂成形して半導体チッ
プ２を密封収納し、さらにリ−ド３及び放熱板４を所定
形状に曲げ加工すると共に、同じ工程においてリ−ド３
及び放熱板４を所定の寸法、形状に成形しながらそれぞ
れを接続しているダムバ−８を切落として行われる。[0006] To create a semiconductor device having such a structure, the leads 3 and the heat sink 4 are formed on the same metal plate.
After connecting the semiconductor chip 2 to the lead frame 7, the envelope 1 is molded with resin, the semiconductor chip 2 is hermetically housed, and the leads 3 and the heat sink 4 are formed into a predetermined shape. At the same time, lead 3 is bent in the same process.
This is done by cutting off the dam bars 8 connecting the heat sinks 4 while forming them into predetermined dimensions and shapes.
【０００７】しかしながら上記の従来技術においては、
外囲器１外に延出したリ−ド３及び放熱板４の延出部分
３ａ，４ａを所定の形状に曲げ加工する際、放熱板４は
広幅でリ−ド３の数倍の幅を有するように形成されてい
るために、外囲器１の放熱板４が延出している部分に無
理な力が加わり易く、この放熱板４が延出している部分
での外囲器１の樹脂と放熱板４の金属との界面に剥離が
生じたり、外囲器１の放熱板４が延出している部分の近
傍にひび割れが生じる虞がある。また曲げ寸法の安定性
に欠けていた。However, in the above prior art,
When bending the leads 3 extending outside the envelope 1 and the extending portions 3a, 4a of the heat sink 4 into a predetermined shape, the heat sink 4 is wide and several times the width of the leads 3. Because of this, excessive force is likely to be applied to the portion of the envelope 1 where the heat sink 4 extends, and the resin of the envelope 1 is likely to be applied to the portion of the envelope 1 where the heat sink 4 extends. There is a possibility that peeling may occur at the interface between the heat sink plate 4 and the metal of the heat sink plate 4, or cracks may occur near the portion of the envelope 1 where the heat sink plate 4 extends. It also lacked stability in bending dimensions.
【０００８】さらに、効率的な製造を行うために、通常
曲げ幅が異なるリ−ド３と放熱板４の延出部分３ａ，４
ａを同時に曲げ加工する場合や、さらに配線基板に実装
するときの占有面積をより少なくするために曲部５ａ，
６ａをより外囲器１に近い位置にとる場合には、特に上
述の界面での剥離やひび割れが生じる虞が大きい。Furthermore, in order to carry out efficient manufacturing, the extending portions 3a, 4 of the lead 3 and the heat sink 4, which usually have different bending widths, are
In order to further reduce the occupied area when bending parts 5a and 5a at the same time or when mounting them on a wiring board, the bent parts 5a,
When 6a is located closer to the envelope 1, there is a high possibility that peeling or cracking will occur particularly at the above-mentioned interface.
【０００９】そして、界面での剥離やひび割れが生じる
と、剥離やひび割れが生じた部分の隙間から外囲器１内
に外気や水などが入り、密封収納された半導体チップ２
に付着して汚損し、チップに形成された回路を破壊した
り、性能低下を引起こしたり等する。また一度微少の剥
離やひび割れが生じた場合には、経時的に剥離やひび割
れが進行して半導体チップ２の汚損等の問題を後で生じ
ることとなる。When peeling or cracking occurs at the interface, outside air or water enters into the envelope 1 through the gap where the peeling or cracking occurs, causing the sealed semiconductor chip 2 to leak.
They can adhere to and stain the chip, causing damage to the circuits formed on the chip and deterioration in performance. Further, once slight peeling or cracking occurs, the peeling or cracking progresses over time, resulting in problems such as staining of the semiconductor chip 2 later.
【００１０】また、界面での剥離やひび割れが生じない
ようにリ−ド３と放熱板４の曲げ加工を別々の工程で行
ったり、放熱板４の曲部６ａを外囲器１から離した位置
にとったりすると、製造効率が低下したり、実装面積が
多く必要となったりする。[0010] Furthermore, in order to prevent peeling or cracking at the interface, the bending of the leads 3 and the heat sink 4 is performed in separate processes, and the curved portion 6a of the heat sink 4 is separated from the envelope 1. If it is placed in a different position, manufacturing efficiency decreases or a large mounting area is required.
【００１１】[0011]
【発明が解決しようとする課題】上記のような従来の装
置で放熱板の曲げ加工によって界面で剥離やひび割れが
生じ、これに伴い種々の問題が発生する虞がある状況に
鑑みて本発明はなされたもので、その目的とするところ
は、製造効率や実装効率が低下することなく、外囲器の
割れや、外囲器と放熱板との界面での剥離が発生せず、
回路破壊のない経時的にも安定した品質が得られる半導
体装置を提供することにある。[Problems to be Solved by the Invention] In view of the situation in which the bending process of the heat sink in the conventional apparatus described above causes peeling and cracking at the interface, and various problems may occur due to this, the present invention has been developed. The purpose of this is to prevent cracking of the envelope and peeling at the interface between the envelope and the heat sink, without reducing manufacturing efficiency or mounting efficiency.
It is an object of the present invention to provide a semiconductor device that does not cause circuit breakdown and has stable quality over time.
【００１２】［発明の構成］[Configuration of the invention]
【００１３】[0013]
【課題を解決するための手段】本発明の半導体装置は、
半導体チップを収納して樹脂成形された外囲器と、この
外囲器内で半導体チップに電気的に接続したリ−ド及び
このリ−ドより広幅に形成され半導体チップに熱的に接
続した放熱板とを備え、リ−ド及び放熱板の外囲器から
のそれぞれの延出部分に曲部が設けられてなるものにお
いて、放熱板は曲部にリ−ドと略同幅の渡り部が形成さ
れるように開孔部が形成されていることを特徴とするも
のである。[Means for Solving the Problems] A semiconductor device of the present invention includes:
A resin-molded envelope containing a semiconductor chip, a lead electrically connected to the semiconductor chip within the envelope, and a lead formed wider than the lead and thermally connected to the semiconductor chip. The heat sink is provided with a curved portion on each of the leads and the extension portion of the heat sink from the envelope, and the heat sink has a transition portion approximately the same width as the lead at the curved portion. It is characterized in that the aperture is formed so that .
【００１４】[0014]
【作用】上記のように構成された半導体装置は、放熱板
が曲部にリ−ドと略同幅の渡り部が形成されるように開
孔部を形成しており、このため放熱板の曲部は曲げ幅が
リ−ドの曲げ幅と略同じものの繰返しとなっており、均
等な曲げ力で曲げることができ、曲げ位置もリ−ドと放
熱板は加工可能な外囲器の側壁に近い同じ位置にとるこ
とができて外囲器に局部的な力が作用せず、また放熱板
と外囲器の樹脂との界面では剥離が生じず、そして回路
破壊のない、経時的にも安定した品質のものとなる。[Function] In the semiconductor device configured as described above, the heat sink has an opening in the curved portion so that a transition portion having approximately the same width as the lead is formed. The bending width of the bending portion is approximately the same as the bending width of the lead, and the bending width is approximately the same as that of the lead.The bending width is approximately the same as the bending width of the lead.The bending width is approximately the same as that of the lead.The bending width is approximately the same as that of the lead.The bending width is approximately the same as that of the lead. can be placed in the same position close to the envelope, no local force is applied to the envelope, no peeling occurs at the interface between the heat sink and the resin of the envelope, and no circuit damage occurs over time. Also, the quality is stable.
【００１５】[0015]
【実施例】以下、本発明の実施例を図１乃至図４を参照
して説明する。なお、従来と同一部分には同一符号を付
して説明を省略し、従来と異なる本発明の構成について
説明する。Embodiments Hereinafter, embodiments of the present invention will be described with reference to FIGS. 1 to 4. Note that parts that are the same as those in the prior art are given the same reference numerals and explanations are omitted, and the configuration of the present invention that is different from the prior art will be described.
【００１６】先ず第１の実施例を図１及び図２により説
明する。図１は斜視図であり、図２はリ−ドフレ−ムの
平面図である。First, a first embodiment will be explained with reference to FIGS. 1 and 2. FIG. 1 is a perspective view, and FIG. 2 is a plan view of the lead frame.
【００１７】図において、１０は従来例と同様に外囲器
１の側壁中間部から延出するように設けられた放熱板で
、これには外囲器１内に密封収納された半導体チップ２
が熱的に接続されている。放熱板１０には延出方向に沿
って外囲器１の内側から外側にかけて４本の長方形の開
孔部１１と、リ−ド３と略同幅の５本の渡り部１２が並
行して形成されている。In the figure, reference numeral 10 denotes a heat sink provided extending from the middle part of the side wall of the envelope 1, as in the conventional example, and includes a semiconductor chip 2 that is hermetically housed in the envelope 1.
are thermally connected. The heat sink 10 has four rectangular openings 11 extending from the inside to the outside of the envelope 1 along the extension direction, and five transition parts 12 having approximately the same width as the leads 3 in parallel. It is formed.
【００１８】また、放熱板１０は延出部分１０ａがリ−
ド３と曲げ位置を同じくして、２か所の略直角の曲部１
３ａ，１３ｂを持ってＳ字状に曲げられている。なお２
か所の曲部１３ａ，１３ｂは共に渡り部１２を曲げるこ
とによって形成されている。Further, the heat dissipation plate 10 has an extended portion 10a.
At the same bending position as curve 3, there are two approximately right-angled curved parts 1.
It is bent into an S shape with 3a and 13b. Note 2
The curved portions 13a and 13b are both formed by bending the transition portion 12.
【００１９】このように形成された本実施例の装置は、
従来例と同様に同一の金属板にリ−ド３や放熱板１０、
開孔部１１等が打抜き加工、あるいはエッチング加工に
よって形成されたリ−ドフレ−ム１４を用いて作成され
る。本実施例の作成工程も従来と同様で、リ−ドフレ−
ム１４の外囲器１の内側端部と半導体チップ２の端子と
をボンディングワイヤで接続した後に、外囲器１を樹脂
成形して半導体チップ２を密封収納する。The device of this embodiment formed in this way has the following features:
Like the conventional example, the leads 3, heat sink 10,
The openings 11 and the like are created using a lead frame 14 formed by punching or etching. The manufacturing process of this example is also the same as the conventional one.
After the inner end of the envelope 1 of the module 14 and the terminals of the semiconductor chip 2 are connected with bonding wires, the envelope 1 is molded with resin and the semiconductor chip 2 is hermetically housed.
【００２０】さらにリ−ド３及び放熱板１０を、延出部
分３ａ，１０ａの曲げ加工可能な外囲器１からの延出根
元部の近傍を第１の曲部５ａ，１３ａとし、同時にＳ字
状に曲げ加工すると共に、同じ工程においてリ−ド３及
び放熱板１０を所定の寸法、形状に成形しながらそれぞ
れを接続しているダムバ−８を切落とす。Further, the leads 3 and the heat sink 10 are arranged such that the vicinity of the root portions of the extending portions 3a, 10a extending from the bendable envelope 1 are first curved portions 5a, 13a, and at the same time, the S At the same time, in the same process, the leads 3 and the heat sink 10 are formed into predetermined dimensions and shapes, and the dam bars 8 connecting them are cut off.
【００２１】上述の本実施例によれば、放熱板１０の２
か所の曲部１３ａ，１３ｂは曲げ幅がリ−ド３の曲げ幅
と略同じものの繰返しとなっているために、すべてに均
等な曲げ力が作用して曲げられる。そして曲げ位置も、
リ−ド３及び放熱板１０は共に加工可能な外囲器１の側
壁に近い同じ位置にとることができ、リ−ド３及び放熱
板１０が延出している外囲器１にも局部的な力が作用せ
ず、また放熱板１０と外囲器１の樹脂の界面での大きな
剥離力が作用しない。According to this embodiment described above, two of the heat sinks 10
Since the bending width of the bent portions 13a and 13b is approximately the same as that of the lead 3, an equal bending force is applied to all of the bending portions 13a and 13b. And the bending position,
Both the leads 3 and the heat sink 10 can be placed in the same position near the side wall of the processable envelope 1, and the leads 3 and the heat sink 10 can also be placed locally in the envelope 1 from which they extend. In addition, no large peeling force is applied at the interface between the heat sink 10 and the resin of the envelope 1.
【００２２】このため外囲器１のひび割れや界面での剥
離が生じない。そして外囲器１内に外気や水などが入り
、密封収納された半導体チップ２に付着して汚損し、チ
ップに形成された回路を破壊したり、性能低下を引起こ
したり等することがない。さらに経時的に剥離やひび割
れが進行することによる半導体チップ２の汚損等の問題
が生じることもない。[0022] Therefore, cracks in the envelope 1 and peeling at the interface do not occur. In addition, outside air or water will not enter the envelope 1, adhere to and stain the sealed semiconductor chip 2, and will not destroy the circuit formed on the chip or cause performance deterioration. . Furthermore, problems such as staining of the semiconductor chip 2 due to progression of peeling and cracking over time do not occur.
【００２３】また、リ−ド３と放熱板１０の曲げ加工を
、同時に外囲器１から近い位置に曲げ位置をとって行う
ことができ、曲げ寸法も安定したものとなり、製造効率
を低下させたり、実装面積を多く必要とするようなこと
等がなくなる。In addition, the bending process of the leads 3 and the heat sink 10 can be performed at the same time at a position close to the envelope 1, and the bending dimensions become stable, which reduces manufacturing efficiency. This also eliminates the need for a large amount of mounting area.
【００２４】次に、第２の実施例を図３及び図４により
説明する。図３は斜視図であり、図４はリ−ドフレ−ム
の平面図である。Next, a second embodiment will be explained with reference to FIGS. 3 and 4. FIG. 3 is a perspective view, and FIG. 4 is a plan view of the lead frame.
【００２５】図において、１５は第１の実施例と同様に
外囲器１の側壁中間部から延出するように設けられた放
熱板で、これには外囲器１内に密封収納された半導体チ
ップ２が熱的に接続されている。放熱板１５は延出部分
１５ａがリ−ド３と曲げ位置を同じくして、２か所の略
直角の曲部１６ａ，１６ｂを持ってＳ字状に曲げられて
いる。そして放熱板１５の曲部１６ａ，１６ｂにはそれ
ぞれ曲げ頂部にリ−ド３と略同幅の５本の渡り部１７ａ
，１７ｂが形成されるように各４つの開孔部１８ａ，１
８ｂが形成されている。In the figure, reference numeral 15 denotes a heat sink provided extending from the middle part of the side wall of the envelope 1, as in the first embodiment. A semiconductor chip 2 is thermally connected. The heat dissipating plate 15 is bent into an S-shape with an extending portion 15a bent at the same bending position as the lead 3, and having two substantially right-angled bent portions 16a and 16b. The curved portions 16a and 16b of the heat sink 15 each have five transition portions 17a having approximately the same width as the leads 3 at the top of each bend.
, 17b are formed in each of the four openings 18a, 1.
8b is formed.
【００２６】このように形成される本実施例の装置も、
第１の実施例と同様に同一の金属板にリ−ド３や放熱板
１５、開孔部１８ａ，１８ｂ等が形成されたリ−ドフレ
−ム１９を用いて作成される。本実施例の作成工程も第
１の実施例と同様、リ−ドフレ−ム１９に半導体チップ
２を接続した後、樹脂成形により外囲器１を形成する。The device of this embodiment formed in this manner also has the following characteristics:
As in the first embodiment, a lead frame 19 is used in which the leads 3, heat sink 15, openings 18a, 18b, etc. are formed on the same metal plate. The manufacturing process of this embodiment is similar to that of the first embodiment, and after connecting the semiconductor chip 2 to the lead frame 19, the envelope 1 is formed by resin molding.
【００２７】さらにリ−ド３及び放熱板１５を、延出部
分３ａ，１５ａの所定の位置で同時にＳ字状に曲げ加工
し、同じ工程においてリ−ド３及び放熱板１５を所定の
寸法、形状に成形し、それぞれを接続しているダムバ−
８を切落とす。Furthermore, the leads 3 and the heat sink 15 are simultaneously bent into an S-shape at predetermined positions of the extending portions 3a and 15a, and in the same process, the leads 3 and the heat sink 15 are bent to the predetermined dimensions. Dam bars formed into shapes and connecting each
Cut off 8.
【００２８】上記の本実施例においても第１の実施例と
同様の作用、効果を有すると共に、曲部１６ａ，１６ｂ
に必要とする最少限の開孔部１８ａ，１８ｂを形成する
ように成るため、放熱効果の低減を少なくすることがで
きる。The present embodiment described above also has the same functions and effects as the first embodiment, and the curved portions 16a, 16b
Since the minimum number of openings 18a and 18b required for this purpose is formed, the reduction in heat dissipation effect can be minimized.
【００２９】尚、本発明は上記の各実施例に限定される
ものではなく、要旨を逸脱しない範囲内で適宜変更して
実施し得るものである。It should be noted that the present invention is not limited to the above-mentioned embodiments, but can be implemented with appropriate modifications within the scope of the gist.
【００３０】[0030]
【発明の効果】以上の説明から明らかなように、本発明
は放熱板が曲部にリ−ドと略同幅の渡り部が形成される
ように開孔部を形成する構成としたことにより、次のよ
うな効果が得られる。即ち製造効率や実装効率を低下さ
せることなく、外囲器の割れや、外囲器と放熱板との界
面での剥離の発生を防止でき、回路破壊がない、経時的
にも安定した品質が得られる等の効果を奏する。[Effects of the Invention] As is clear from the above description, the present invention has a structure in which the heat dissipation plate has an opening in the curved portion so as to form a transition portion having approximately the same width as the lead. , the following effects can be obtained. In other words, without reducing manufacturing efficiency or mounting efficiency, it is possible to prevent cracks in the envelope and peeling at the interface between the envelope and the heat sink, prevent circuit damage, and maintain stable quality over time. Effects such as being obtained.
【図１】本発明の第１の実施例を示す斜視図である。FIG. 1 is a perspective view showing a first embodiment of the present invention.
【図２】第１の実施例に係わるリ−ドフレ−ムの平面図
である。FIG. 2 is a plan view of a lead frame according to the first embodiment.
【図３】本発明の第２の実施例を示す斜視図である。FIG. 3 is a perspective view showing a second embodiment of the invention.
【図４】第２の実施例に係わるリ−ドフレ−ムの平面図
である。FIG. 4 is a plan view of a lead frame according to a second embodiment.
【図５】従来例を示す斜視図である。FIG. 5 is a perspective view showing a conventional example.
【図６】従来例に係わるリ−ドフレ−ムの平面図である
。FIG. 6 is a plan view of a lead frame according to a conventional example.
１…外囲器 ２…半導体チップ ３…リ−ド ３ａ…リ−ドの延出部分 １０…放熱板 １０ａ…放熱板の延出部分 １１…開孔部 １２…渡り部 １３ａ，１３ｂ…放熱板の曲部 1...Envelope 2...Semiconductor chip 3...Lead 3a...Extending part of the lead 10... Heat sink 10a...Extending part of heat sink 11...Opening part 12... Crossing section 13a, 13b...Curved portion of heat sink
Claims (1)
た外囲器と、この外囲器内で前記半導体チップに電気的
に接続したリ−ド及びこのリ−ドより広幅に形成され前
記半導体チップに熱的に接続した放熱板とを備え、前記
リ−ド及び放熱板の前記外囲器からのそれぞれの延出部
分に曲部が設けられてなるものにおいて、前記放熱板は
前記曲部に前記リ−ドと略同幅の渡り部が形成されるよ
うに開孔部が形成されていることを特徴とする半導体装
置。1. A resin-molded envelope housing a semiconductor chip; a lead electrically connected to the semiconductor chip within the envelope; and a heat sink thermally connected to the chip, the leads and the heat sink having curved portions respectively extending from the envelope, wherein the heat sink is provided with curved portions. 1. A semiconductor device, wherein an opening is formed so that a transition portion having approximately the same width as the lead is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2414445A JPH04225268A (en) | 1990-12-26 | 1990-12-26 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2414445A JPH04225268A (en) | 1990-12-26 | 1990-12-26 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04225268A true JPH04225268A (en) | 1992-08-14 |
Family
ID=18522923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2414445A Pending JPH04225268A (en) | 1990-12-26 | 1990-12-26 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04225268A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996001524A1 (en) * | 1994-07-04 | 1996-01-18 | Seiko Epson Corporation | Piezoelectric oscillator |
| US6165818A (en) * | 1997-05-21 | 2000-12-26 | Nec Corporation | Method of manufacturing a semiconductor device with a pair of radiating terminals and a plurality of lead terminals formed from a single lead frame |
| JP2015090960A (en) * | 2013-11-07 | 2015-05-11 | 株式会社デンソー | Semiconductor package |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6180842A (en) * | 1984-09-28 | 1986-04-24 | Hitachi Ltd | semiconductor equipment |
| JPS62206868A (en) * | 1986-03-07 | 1987-09-11 | Hitachi Ltd | Electronic device |
| JPH03105958A (en) * | 1989-09-19 | 1991-05-02 | Nec Corp | Resin-sealed semiconductor device |
-
1990
- 1990-12-26 JP JP2414445A patent/JPH04225268A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6180842A (en) * | 1984-09-28 | 1986-04-24 | Hitachi Ltd | semiconductor equipment |
| JPS62206868A (en) * | 1986-03-07 | 1987-09-11 | Hitachi Ltd | Electronic device |
| JPH03105958A (en) * | 1989-09-19 | 1991-05-02 | Nec Corp | Resin-sealed semiconductor device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996001524A1 (en) * | 1994-07-04 | 1996-01-18 | Seiko Epson Corporation | Piezoelectric oscillator |
| US5912592A (en) * | 1994-07-04 | 1999-06-15 | Seiko Epson Corporation | Piezoelectric oscillator |
| US6165818A (en) * | 1997-05-21 | 2000-12-26 | Nec Corporation | Method of manufacturing a semiconductor device with a pair of radiating terminals and a plurality of lead terminals formed from a single lead frame |
| JP2015090960A (en) * | 2013-11-07 | 2015-05-11 | 株式会社デンソー | Semiconductor package |
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