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JPH04220804A - high frequency oscillator - Google Patents

high frequency oscillator

Info

Publication number
JPH04220804A
JPH04220804A JP2413406A JP41340690A JPH04220804A JP H04220804 A JPH04220804 A JP H04220804A JP 2413406 A JP2413406 A JP 2413406A JP 41340690 A JP41340690 A JP 41340690A JP H04220804 A JPH04220804 A JP H04220804A
Authority
JP
Japan
Prior art keywords
thin layer
substrate
layer conductor
inductance
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2413406A
Other languages
Japanese (ja)
Inventor
Masashi Yamagishi
山岸雅司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2413406A priority Critical patent/JPH04220804A/en
Publication of JPH04220804A publication Critical patent/JPH04220804A/en
Pending legal-status Critical Current

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  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Waveguides (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明はVHF又はUHF帯の無
線機における信号伝送方向に対して直列に接続し得るよ
うに、誘電体基板上にインダクタンス素子を相似な渦巻
状の薄層導体によって形成した重積回路基板からなる高
周波発振器に関する。
[Industrial Application Field] The present invention is directed to forming an inductance element on a dielectric substrate using a similar spiral thin layer conductor so that it can be connected in series with respect to the signal transmission direction in VHF or UHF band radio equipment. This invention relates to a high-frequency oscillator made of stacked circuit boards.

【0002】0002

【従来の技術】高周波用LC発振器を構成するのに、主
面に薄層導体をパタ−ンとして形成し、他面に接地薄層
導体を形成した誘電体基板を用いてインダクタとしての
スパイラルコイルを設けた発信回路を主面上に構成する
のが一般的であった。しかしこのような方法により構成
した発振器は、各部品の精度、全体的な製作工数、性能
の点で技術的、経済的に劣るため、この改善策として5
層重積した誘電体基板を用い、第1及び第5層に部品を
取付し、第2及び第4層を夫々接地用に、第3層上にイ
ンダクタンスをせしめる薄層導体によりパターン形成し
たものが知られている。
[Prior Art] To construct a high-frequency LC oscillator, a spiral coil is used as an inductor using a dielectric substrate with a thin layer conductor formed as a pattern on the main surface and a ground thin layer conductor formed on the other surface. It was common to construct a transmitter circuit on the main surface. However, oscillators constructed using this method are technically and economically inferior in terms of precision of each component, overall manufacturing time, and performance.
Using stacked dielectric substrates, parts are attached to the first and fifth layers, the second and fourth layers are used for grounding, and the third layer is patterned with a thin layer conductor to create inductance. It has been known.

【0003】0003

【従来技術の課題】しかしながら発振器を構成する上記
前者の方法によると、部品の取着面にインダクタとして
のパターンが存在しているので、近傍部品との結合、シ
−ルド手段等による影響の授受により発信周波数が不安
定となり、特に機械的振動に対してインダクタを含む発
信条件となるべき電磁的結合が崩れる恐れがあった。
[Problems with the Prior Art] However, according to the above-mentioned former method of configuring an oscillator, there is a pattern as an inductor on the mounting surface of the component, so it is coupled with neighboring components and receives influence from shielding means, etc. As a result, the transmission frequency becomes unstable, and there is a risk that the electromagnetic coupling, which is the transmission condition including the inductor, may be broken, especially against mechanical vibration.

【0004】また前記後者の方法はインダクタ薄層導体
が接地導体に挟まれた構成のためにインダクタンス・コ
イルとしてのQが低減し、これを防止せんとしてパタ−
ン幅を増せば、基板の総面積が増加したり、所定のイン
ダクタンスが得難い等の難点があった。
Furthermore, in the latter method, since the inductor thin-layer conductor is sandwiched between the ground conductors, the Q of the inductance coil is reduced, and in order to prevent this, the pattern is
If the width of the conductor is increased, the total area of the substrate increases, and it is difficult to obtain a predetermined inductance.

【0005】[0005]

【課題を解決するための手段】上記従来の技術的、経済
的問題点に鑑みて本発明は、実質的にインダクタンス成
分を増強するために、隣接基板の各々に従続信号伝送路
となる如く幾何学的に相似のインダクタ・パタ−ンを薄
層導体により形成して互いに重積し、最外層基板の夫々
を部品取着と接地導体としての機能をもたしめる多層重
積構成の基板によって、従来の障害を払拭した高周波用
LC発振器を実現せんとするものである。
[Means for Solving the Problems] In view of the above-mentioned conventional technical and economical problems, the present invention provides a structure in which each adjacent substrate becomes a subsequent signal transmission path in order to substantially increase the inductance component. A multilayer stacked board is used in which geometrically similar inductor patterns are formed using thin conductors and stacked on top of each other, and each outermost layer board functions as a component attachment and a ground conductor. The present invention aims to realize a high-frequency LC oscillator that eliminates the conventional obstacles.

【0006】[0006]

【実施例】以下に図面とともに本発明の一実施例を説明
する。図1は誘電体1を主体とする第1乃至第4基板1
ー1、1−2、1−3、1−4の夫々主面又は他面に薄
層導体41、42、43、44が形成されて、各基板を
一体に重積構成した本発明の高周波発振器の主部の側断
面図であり、21、31がインダクタンス素子として機
能する第1インダクタンス素子及び第2インダクタンス
素子であって夫々、第2及び第3基板の主面に図3(A
)、(B)のように、互いに相似な渦巻状薄層導体が形
成されている。10、20、は誘電体を主面から他面へ
貫通する異なった位置に設けられた各スルーホ−ルであ
る。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows first to fourth substrates 1 mainly composed of a dielectric material 1.
-1, 1-2, 1-3, and 1-4, respectively, have thin layer conductors 41, 42, 43, and 44 formed on the main surface or the other surface, and each substrate is integrally stacked, according to the present invention. It is a side sectional view of the main part of the oscillator, and 21 and 31 are a first inductance element and a second inductance element functioning as inductance elements, and are shown in FIG. 3 (A) on the main surfaces of the second and third substrates, respectively.
) and (B), spiral thin layer conductors similar to each other are formed. Reference numerals 10 and 20 indicate through holes provided at different positions passing through the dielectric from the main surface to the other surface.

【0007】図2は前記第2及び第3基板の主面に夫々
形成した第1及び第2インダクタンス素子21及び31
の電気的結線図で、図1において第2基板上の第1イン
ダクタンス素子21の入力端子T11を第1基板のスル
−ホ−ル10と導電状態でその主面の薄層導体上の所定
位置にろう付けし、第1インダクタ素子の出力端子T2
1を別のスル−ホ−ル20を介して主面上の薄層導体に
ろう付けするとともに、ここから図示していないまた別
のスルーホ−ルを導電的に経由して第3基板上の第2イ
ンダクタンス素子31の入力端子T12と接続し、第2
インダクタンス素子の出力端子T22をスル−ホ−ル2
0を経由して接地極となる他面の薄層導体44に電気的
に接続される結果、最終的にインダクタンス素子2組が
直列に従続接続されることになる。
FIG. 2 shows first and second inductance elements 21 and 31 formed on the main surfaces of the second and third substrates, respectively.
1, the input terminal T11 of the first inductance element 21 on the second substrate is electrically connected to the through-hole 10 of the first substrate at a predetermined position on the thin layer conductor on the main surface thereof. and the output terminal T2 of the first inductor element.
1 is brazed to the thin layer conductor on the main surface through another through hole 20, and from there conductively passes through another through hole (not shown) on the third substrate. Connected to the input terminal T12 of the second inductance element 31,
Through-hole 2 connects the output terminal T22 of the inductance element.
As a result of being electrically connected to the thin layer conductor 44 on the other side, which serves as a ground electrode, through 0, the two sets of inductance elements are finally connected in series.

【0008】前記したようなインダクタンス素子を薄層
導体によって構成した多重基板を用い、図4に示す発振
器とするためにトランジスタTR 、コンデンサC1 
乃至C4 、抵抗器Rの電気部品を第1基板の主面上の
薄層導体に載置してろう接するか、トランジスタを含む
他の電気部品も半導体集積技術によって誘電体基板上に
造り込むこともできる。
[0008] Using a multiple substrate in which the above-mentioned inductance elements are constructed of thin layer conductors, a transistor TR and a capacitor C1 are used to construct an oscillator as shown in FIG.
to C4, placing the electrical components of the resistor R on the thin layer conductor on the main surface of the first substrate and soldering them, or fabricating other electrical components including transistors on the dielectric substrate using semiconductor integration technology; You can also do it.

【0009】また本発明は前記実施例にとどまらず、誘
電体の主面に薄層導体により渦巻状に形成したインダク
タンス素子を備えた基板を一対に隣接配置することを基
本構成として、電子部品の支持導体又は接地導体を有し
た最外基板により、複数対のインダクタンス素子を重積
した多層構成が得られることは言うまでもない。
Furthermore, the present invention is not limited to the above-mentioned embodiments, but has a basic configuration in which a pair of substrates each having an inductance element formed in a spiral shape using a thin layer conductor on the main surface of a dielectric body is disposed adjacent to each other. It goes without saying that the outermost substrate with the support conductor or the ground conductor provides a multilayer structure in which a plurality of pairs of inductance elements are stacked one on top of the other.

【0010】0010

【発明の効果】以上詳記したように、本発明によればイ
ンダクタンス素子が接地極に挟合重積された従来の5層
構成の発振器に比し、最外基板を部品の取着支持と接地
電極のみの機能をもたせ且つ互いに相似又は合同な渦巻
状薄層導体をインダクタとして隣接配置してなる構成で
あるため、インダクタンス同志の電磁的な相互インダク
タンス結合が微弱ではあっても、インダクタンス成分が
直列に相加されて高いQをもたせることができるととも
に、他の電気部品との電磁妨害の影響は殆どなく、電磁
シ−ルド加工が簡易にできる。また半導体集積化技術を
適用して各回路素子を誘電体上に一度に形成することが
可能になるので、ろう接の信頼性が増し且つ自由空間に
対する電磁障害源が除去され、安定な高性能な発振器を
得るのに貢献するものである。
As described in detail above, according to the present invention, compared to the conventional 5-layer oscillator in which the inductance element is sandwiched and stacked between the ground electrodes, the outermost substrate is used as a support for mounting components. Since the structure is made up of similar or congruent spiral thin-layer conductors arranged adjacently as inductors that function only as ground electrodes, even though the electromagnetic mutual inductance coupling between the inductances is weak, the inductance component is It can be added in series to provide a high Q, and there is almost no effect of electromagnetic interference with other electrical parts, making electromagnetic shielding easy. In addition, by applying semiconductor integration technology, it becomes possible to form each circuit element on a dielectric material at once, which increases the reliability of soldering and eliminates sources of electromagnetic interference in free space, resulting in stable high performance. This contributes to the creation of a high quality oscillator.

【図面の簡単な説明】[Brief explanation of the drawing]

【図1】本発明の高周波発振器を実施するための多層誘
電体基板の構成を示す側断面図。
FIG. 1 is a side sectional view showing the configuration of a multilayer dielectric substrate for implementing a high frequency oscillator of the present invention.

【図2】発振器の主部をなすインダクタンス素子の従続
的電気結線図。
FIG. 2 is a secondary electrical connection diagram of an inductance element that forms the main part of an oscillator.

【図3】図1の第2及び第3基板の主面上に薄層導体に
より形成したインダクタンス素子のパターン上面図であ
る。
3 is a top view of a pattern of an inductance element formed of a thin conductor on the main surfaces of the second and third substrates in FIG. 1; FIG.

【図4】トランジスタによる発振回路の一例である。FIG. 4 is an example of an oscillation circuit using transistors.

【符号の説明】[Explanation of symbols]

1                      誘電
体1−1乃至1−4        第1〜第4基板1
0、20              スル−ホ−ル2
1、31              第1及び第2イ
ンダクタンス素子
1 Dielectrics 1-1 to 1-4 First to fourth substrates 1
0, 20 through hole 2
1, 31 First and second inductance elements

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】誘電体を主体とする基板上の薄層導体にL
C素子を取着してなる高周波発振器において、上記誘電
体基板は上記誘電体を挟む少なくとも一方の主面と対向
する他面のいずれか又は両面に形成された薄層導体と、
上記主面から上記他面へ貫通する複数のスル−ホ−ルを
備え、上記薄層導体が信号伝送路並びに電気部品の取付
け支持体として主面に形成された第1基板と、各々が第
1及び第2インダクタンス素子として同一の巻回方向の
渦巻状薄層導体を主面にもち、互いに隣接配置した第2
及び第3基板と、他面の薄層導体を接地極とした第4基
板とを一体に重積し、且つ上記第2基板上にある第1イ
ンダクタンス素子の入力端子と上記第1基板の一つのス
ル−ホ−ルを経由して薄層導体に接続するとともに第3
基板上にある第2インダクタンス素子の出力端子を他の
スル−ホ−ルを経由して他面の薄層導体に接続し、よっ
て上記第1及び第2インダクタンス素子を従続的に結線
してなることを特徴とする高周波発振器。
Claim 1: A thin layer conductor on a substrate mainly composed of a dielectric material.
In a high frequency oscillator having a C element attached thereto, the dielectric substrate includes a thin layer conductor formed on at least one principal surface sandwiching the dielectric and the other opposing surface or both surfaces;
a first substrate having a plurality of through holes penetrating from the main surface to the other surface, the thin layer conductor being formed on the main surface as a signal transmission path and a mounting support for electrical components; The first and second inductance elements have spiral thin layer conductors in the same winding direction on their main surfaces and are arranged adjacent to each other.
and a third substrate and a fourth substrate with the thin layer conductor on the other side as a ground electrode are stacked together, and the input terminal of the first inductance element on the second substrate is connected to one of the first substrates. It connects to the thin layer conductor via two through-holes and the third through-hole.
The output terminal of the second inductance element on the substrate is connected to the thin layer conductor on the other side via another through hole, so that the first and second inductance elements are successively connected. A high frequency oscillator characterized by:
JP2413406A 1990-12-20 1990-12-20 high frequency oscillator Pending JPH04220804A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2413406A JPH04220804A (en) 1990-12-20 1990-12-20 high frequency oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2413406A JPH04220804A (en) 1990-12-20 1990-12-20 high frequency oscillator

Publications (1)

Publication Number Publication Date
JPH04220804A true JPH04220804A (en) 1992-08-11

Family

ID=18522058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2413406A Pending JPH04220804A (en) 1990-12-20 1990-12-20 high frequency oscillator

Country Status (1)

Country Link
JP (1) JPH04220804A (en)

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