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JPH04207059A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH04207059A
JPH04207059A JP2340503A JP34050390A JPH04207059A JP H04207059 A JPH04207059 A JP H04207059A JP 2340503 A JP2340503 A JP 2340503A JP 34050390 A JP34050390 A JP 34050390A JP H04207059 A JPH04207059 A JP H04207059A
Authority
JP
Japan
Prior art keywords
semiconductor chip
lid
heat
package body
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2340503A
Other languages
Japanese (ja)
Inventor
Fumio Kuraishi
倉石 文夫
Masato Tanaka
正人 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP2340503A priority Critical patent/JPH04207059A/en
Publication of JPH04207059A publication Critical patent/JPH04207059A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49109Connecting at different heights outside the semiconductor or solid-state body

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To enhance heat dissipation properties by transferring the heat on the top of a semiconductor chip generating a large quantity of heat where there exist junction patterns by way of insulation resin. CONSTITUTION:TAB tape 30 is bonded with a semiconductor chip 24 by an ordinary process. After the bonding the semiconductor chip 24 and the TAB tape are clamped from both sides and bonded with a package main body 22 and a lid 38 with insulation resin 28. Since they are formed in this manner, not only heat can be dissipated from the bottom of the semiconductor chip 24 by way of the insulation resin 28 and the package main body 22 but also directly from the lid 38 heat can be dissipated by way of the insulation resin from the top of the semiconductor chip 24 generating a large quantity of heat where there exist junction patterns, which provides excellent heat dissipation properties.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は放熱性に優れる半導体装置に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to a semiconductor device with excellent heat dissipation.

(従来の技術) 近年半導体チップは益々高集積化し、発熱量も多いこと
から、これを搭載する半導体パッケージは放熱性に優れ
るものが要求される。
(Prior Art) In recent years, semiconductor chips have become increasingly highly integrated and generate a large amount of heat, so the semiconductor package in which they are mounted is required to have excellent heat dissipation.

このため従来のセラミック製の半導体パッケージは第2
図に示すようにヒートシンク10上に半導体チップ12
を搭載し、この半導体チップ12と内部配線パターン間
をワイヤ14で電気的に接続したのち、金属製、あるい
はセラミック製のリッド16により気密に封止するよう
にしていた。
For this reason, conventional ceramic semiconductor packages are
As shown in the figure, a semiconductor chip 12 is placed on a heat sink 10.
After electrically connecting the semiconductor chip 12 and the internal wiring pattern with wires 14, the semiconductor chip 12 is hermetically sealed with a lid 16 made of metal or ceramic.

(発明が解決しようとする課題) 上記の半導体装置によればヒートシンク10を通じて半
導体チップ12の下面側から放熱が図れる。
(Problems to be Solved by the Invention) According to the above semiconductor device, heat can be radiated from the lower surface side of the semiconductor chip 12 through the heat sink 10.

しかしながら、前記したように半導体チンプ12は高集
積化の一途を辿り、半導体チップ12によっては上記の
ようにチップ下面側に放熱するだけでは放熱性が不充分
となる問題が生じるに至っている。特に半導体チップは
ジャンクションパターンがある上面での発熱量が大きい
が、前記のようにパッケージ内部はリッド16により気
密に封じられているのみで内部には伝熱性に劣る空気層
が存在することから、リッド16やパッケージ側壁を通
じての外部への放熱性には極めて不充分であった。
However, as described above, semiconductor chips 12 are becoming increasingly highly integrated, and depending on the semiconductor chip 12, a problem has arisen in which heat dissipation is insufficient just by dissipating heat to the bottom surface of the chip as described above. In particular, semiconductor chips generate a large amount of heat on the top surface where there is a junction pattern, but as mentioned above, the inside of the package is only hermetically sealed by the lid 16 and there is an air layer inside that has poor heat conductivity. Heat dissipation to the outside through the lid 16 and the side walls of the package was extremely insufficient.

そこで本発明は上記問題点を解消すべくなされたもので
、その目的とするところは、集積度が高く、かつ発熱量
の大きな半導体チップを搭載したものにあって、その放
熱性にも優れる半導体装置を提供するにある。
Therefore, the present invention has been made to solve the above-mentioned problems, and its purpose is to provide a semiconductor chip that has a high degree of integration and is equipped with a semiconductor chip that generates a large amount of heat, and that also has excellent heat dissipation properties. We are here to provide you with the equipment.

(課題を解決するための手段) 上記目的による本発明では、パッケージ本体に半導体チ
ップが収容され、リッドにより気密に封止されると共に
、半導体チップと外部接続用リードとが電気的に接続さ
れた半導体装置において、前記リッドは半導体チップの
熱膨張係数に近い熱膨張係数を有する素材からなり、内
面に半導体チップ上面に近接するよう突出する突出部が
形成されると共に該突出部下面において絶縁性樹脂を介
して半導体チップの上面に接合されており、前記半導体
チップと電気的に接続される外部接続用リードは、イン
ナーリードが半導体チップに接続され、アウターリード
がパッケージ本体外部に導出されたTABテープよりな
り、該TABテープはその中途部において、対向する前
記リッド端縁とパッケージ本体端縁間を封止する絶縁性
樹脂中に封止されていることを特徴としている。
(Means for Solving the Problems) In the present invention according to the above object, a semiconductor chip is housed in a package body, hermetically sealed by a lid, and the semiconductor chip and external connection leads are electrically connected. In the semiconductor device, the lid is made of a material having a thermal expansion coefficient close to that of the semiconductor chip, and has a protrusion formed on its inner surface that protrudes close to the upper surface of the semiconductor chip, and is made of an insulating resin on the lower surface of the protrusion. The external connection lead, which is joined to the top surface of the semiconductor chip through the TAB tape and is electrically connected to the semiconductor chip, is a TAB tape whose inner lead is connected to the semiconductor chip and whose outer lead is led out to the outside of the package body. The TAB tape is characterized in that a midway portion thereof is sealed in an insulating resin that seals between the lid edge and the package body edge that are opposed to each other.

上記半導体装置においてパッケージ本体とリッドとで囲
まれる全空間内に絶縁性樹脂が充填されているのが好ま
しい。
Preferably, in the semiconductor device, the entire space surrounded by the package body and the lid is filled with an insulating resin.

またパッケージ本体はセラミック製にするとコスト的に
有利である。
Furthermore, it is advantageous in terms of cost if the package body is made of ceramic.

(作用) ジャンクションパターンが存在して発熱量の大きい半導
体チップ上面側の熱を絶縁性樹脂を介してリッドに伝達
させ、リッドから直接外部に放熱できるので、放熱性に
極めて優れる。またリッドは熱膨張係数が半導体チップ
に近いものを使用しているので、半導体チップへの熱的
ストレスを軽減できる。
(Function) Heat from the upper surface of the semiconductor chip, which has a junction pattern and generates a large amount of heat, is transmitted to the lid via the insulating resin, and the heat can be radiated directly from the lid to the outside, resulting in extremely excellent heat dissipation. Furthermore, since the lid is made of a material whose coefficient of thermal expansion is close to that of the semiconductor chip, thermal stress on the semiconductor chip can be reduced.

(実施例) 以下本発明の好適な実施例と添付図面に基づいて詳細に
説明する。
(Embodiments) Hereinafter, the present invention will be described in detail based on preferred embodiments and the accompanying drawings.

第1図は半導体装置20の断面図を示す。FIG. 1 shows a cross-sectional view of a semiconductor device 20. As shown in FIG.

図において22はセラミック製のパッケージ本体であり
、半導体チップ24収納用の凹部26を有する。半導体
チップ24は該凹部26内に絶縁性樹脂28により接着
されて収容されている。
In the figure, 22 is a ceramic package body, which has a recess 26 for accommodating a semiconductor chip 24. The semiconductor chip 24 is housed in the recess 26 while being bonded with an insulating resin 28.

30はT A B (Tape Automated 
Bonding)テープ(外部接続用リード)であり、
インナート32がバンブ36によって半導体チップ24
に接続され、アウターリード34がパッケージ本体22
外部に導出されている。
30 is T A B (Tape Automated
Bonding) tape (lead for external connection),
The inner 32 is connected to the semiconductor chip 24 by the bump 36.
The outer lead 34 is connected to the package body 22.
Externally derived.

38はリッドであり、放熱性に優れ、かつ半導体チップ
24の熱膨張係数に近い熱膨張係数を有する素材、例え
ばMo材、W材、AfN材、SiC材、Cu−W材など
から成る。
A lid 38 is made of a material that has excellent heat dissipation properties and has a coefficient of thermal expansion close to that of the semiconductor chip 24, such as Mo material, W material, AfN material, SiC material, Cu-W material, etc.

半導体チップ24上面に対向するリッド38の内面には
下面が半導体チップ24上面に近接するよう突出する突
出部40が形成されている。リッド38はその突出部4
0下面において絶縁性樹脂28により半導体チップ24
上面に接合されると共に、その下面周縁部も絶縁性樹脂
28によりパッケージ本体22の周縁上面に封止される
。また上記のTABテープ30もその中途部が絶縁性樹
脂28中に封止・固定されている。
A protrusion 40 is formed on the inner surface of the lid 38 facing the upper surface of the semiconductor chip 24 so that its lower surface protrudes close to the upper surface of the semiconductor chip 24 . The lid 38 has its protrusion 4
0, the semiconductor chip 24 is covered with an insulating resin 28 on the lower surface.
While being bonded to the upper surface, the peripheral edge of the lower surface is also sealed to the upper peripheral surface of the package body 22 with insulating resin 28 . Further, the TAB tape 30 described above also has its middle portion sealed and fixed in the insulating resin 28.

42はリッド38上面に固定された放熱フィンである。42 is a radiation fin fixed to the upper surface of the lid 38.

絶縁性樹脂28は耐熱性に優れるポリイミド樹脂が好適
である。また絶縁性樹脂28はパッケージ本体22とリ
ッド38との間の空隙を全て満たすように充填されるの
がよい。
The insulating resin 28 is preferably a polyimide resin which has excellent heat resistance. Further, it is preferable that the insulating resin 28 is filled so as to completely fill the gap between the package body 22 and the lid 38.

パッケージ本体22は、A!、Cu、AlNなど放熱性
に優れる素材のもので形成するのが有効であり、さらに
リッド38に用いたのと同様に、熱膨張係数が半導体チ
ップ24に近い素材のものを用いれば半導体チップ24
への熱的ストレスが軽減できて好適である。
The package body 22 is A! It is effective to use a material with excellent heat dissipation properties such as , Cu, and AlN.Furthermore, if a material with a coefficient of thermal expansion close to that of the semiconductor chip 24 is used for the lid 38, the semiconductor chip 24
This is preferable because it can reduce thermal stress on the body.

上記の半導体装置20の製造法には特に限定されないが
、例えば半導体チップ24にTABテープ30を通常工
程によりボンディングし、しかる後半導体チップ24と
TABテープ30を両側から挟んで絶縁性樹脂28によ
りパッケージ本体22とリッド38とを接着するように
するのがよい。
The method for manufacturing the semiconductor device 20 described above is not particularly limited, but for example, the TAB tape 30 is bonded to the semiconductor chip 24 by a normal process, and then the semiconductor chip 24 and the TAB tape 30 are sandwiched from both sides and packaged with an insulating resin 28. It is preferable that the main body 22 and the lid 38 be bonded together.

上記のように形成されているので、半導体チップ24下
面側から絶縁性樹脂28パツケージ本体22を通じて放
熱させることができるだけでなく、ジャンクションパタ
ーンがあり発熱量の大きい半導体チップ24上面から絶
縁性樹脂28を介してリッド38から直接放熱させるこ
とができるので、放熱性に極めて優れる。
Since it is formed as described above, not only can heat be radiated from the bottom surface of the semiconductor chip 24 through the insulating resin 28 and the package body 22, but also the insulating resin 28 can be radiated from the top surface of the semiconductor chip 24, which has a junction pattern and generates a large amount of heat. Since heat can be directly radiated from the lid 38 through the lid 38, the heat radiation performance is extremely excellent.

また外部接続用リードにTABテープ30を用いるよう
にしているので、高集積度の半導体チップ24に対処で
き、その際の高発熱量に対応できるのであり、またパッ
ケージ本体22も内部配線パターンを必要としないので
構造が簡易で、薄形で安価な半導体装置を提供しうる。
Furthermore, since the TAB tape 30 is used for the external connection leads, it is possible to cope with highly integrated semiconductor chips 24 and the high heat generated at that time, and the package body 22 also requires an internal wiring pattern. Therefore, it is possible to provide a semiconductor device that has a simple structure, is thin, and is inexpensive.

なお、半導体チップ24はその発熱量の大きい上面側が
リッド38の突出部40に接合されていればよく、半導
体チップ24下面側は必ずしもパッケージ本体22に接
合されていなくてもよく、パッケージ本体22内底面と
の間に空隙が存在していてもよい。この場合にも発熱量
の大きな半導体チップ24上面側からの放熱が図れるの
で特に支障はない。
Note that the upper surface side of the semiconductor chip 24, which generates a large amount of heat, only needs to be bonded to the protrusion 40 of the lid 38, and the lower surface side of the semiconductor chip 24 does not necessarily have to be bonded to the package body 22. A gap may exist between the bottom surface and the bottom surface. In this case as well, there is no particular problem because heat can be dissipated from the upper surface side of the semiconductor chip 24, which generates a large amount of heat.

以上、本発明の好適な実施例について種々述べて来たが
、本発明は上述の実施例に限定されるのではなく、発明
の精神を逸脱しない範囲で多くの改変を施し得るのはも
ちろんである。
Although various preferred embodiments of the present invention have been described above, the present invention is not limited to the above-mentioned embodiments, and it goes without saying that many modifications can be made without departing from the spirit of the invention. be.

(発明の効果) 以上のように本発明に係る半導体装置によれば、ジャン
クションパターンが存在して発熱量の大きい半導体チッ
プ上面側の熱を絶縁性樹脂を介してリッドに伝達させ、
リッドから直接外部に放熱できるので、放熱性に極めて
優れる。またリッドは熱膨張係数が半導体チップに近い
ものを使用しているので、半導体チップへの熱的ストレ
スを軽減できる。さらに、外部接続用リードにTABテ
ープを用いることから、集積度の高い半導体チップに対
処できると共に、パッケージ本体も内部配線パターンを
必要としないので構造が簡易で薄形となり、安価な半導
体装置を提供しうる。
(Effects of the Invention) As described above, according to the semiconductor device according to the present invention, heat from the upper surface side of the semiconductor chip where a junction pattern is present and which generates a large amount of heat is transmitted to the lid via the insulating resin.
Heat can be dissipated directly from the lid to the outside, providing excellent heat dissipation. Furthermore, since the lid is made of a material whose coefficient of thermal expansion is close to that of the semiconductor chip, thermal stress on the semiconductor chip can be reduced. Furthermore, since TAB tape is used for external connection leads, it can be used with highly integrated semiconductor chips, and the package itself does not require an internal wiring pattern, resulting in a simple and thin structure, providing an inexpensive semiconductor device. I can do it.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は半導体装置の一例を示す断面図、第2図は従来
のセラミック半導体装置の断面図を示す。 22・・・パッケージ本体、 24・・・半導体チップ
、 28・・・絶縁性樹脂、 30・・・TABテープ、 38・・・リッド。 第  1  図 第2図
FIG. 1 is a sectional view showing an example of a semiconductor device, and FIG. 2 is a sectional view of a conventional ceramic semiconductor device. 22...Package body, 24...Semiconductor chip, 28...Insulating resin, 30...TAB tape, 38...Lid. Figure 1 Figure 2

Claims (1)

【特許請求の範囲】 1、パッケージ本体に半導体チップが収容され、リッド
により気密に封止されると共に、半導体チップと外部接
続用リードとが電気的に接続された半導体装置において
、 前記リッドは半導体チップの熱膨張係数に 近い熱膨張係数を有する素材からなり、内面に半導体チ
ップ上面に近接するよう突出する突出部が形成されると
共に該突出部下面において絶縁性樹脂を介して半導体チ
ップの上面に接合されており、前記半導体チップと電気
的に接続される外部接続用リードは、インナーリードが
半導体チップに接続され、アウターリードがパッケージ
本体外部に導出されたTABテープよりなり、該TAB
テープはその中途部において、対向する前記リッド端縁
とパッケージ本体端縁間を封止する絶縁性樹脂中に封止
されていることを特徴とする半導体装置。 2、パッケージ本体とリッドとで囲われる全空間内に絶
縁性樹脂が充填されていることを特徴とする請求項1記
載の半導体装置。 3、パッケージ本体がセラミック製であることを特徴と
する請求項1または2記載の半導体装置。
[Claims] 1. A semiconductor device in which a semiconductor chip is housed in a package body, hermetically sealed by a lid, and the semiconductor chip and external connection leads are electrically connected, wherein the lid is a semiconductor chip. It is made of a material having a coefficient of thermal expansion close to that of the chip, and has a protrusion formed on its inner surface that protrudes close to the top surface of the semiconductor chip, and a protrusion that protrudes close to the top surface of the semiconductor chip on the bottom surface of the protrusion through an insulating resin. The external connection leads that are bonded and electrically connected to the semiconductor chip are made of a TAB tape whose inner leads are connected to the semiconductor chip and whose outer leads are led outside the package body.
2. A semiconductor device, wherein the tape is sealed in an insulating resin that seals a gap between the lid edge and the package body edge, which are opposite to each other, at a midway portion thereof. 2. The semiconductor device according to claim 1, wherein the entire space surrounded by the package body and the lid is filled with an insulating resin. 3. The semiconductor device according to claim 1 or 2, wherein the package body is made of ceramic.
JP2340503A 1990-11-30 1990-11-30 Semiconductor device Pending JPH04207059A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2340503A JPH04207059A (en) 1990-11-30 1990-11-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2340503A JPH04207059A (en) 1990-11-30 1990-11-30 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH04207059A true JPH04207059A (en) 1992-07-29

Family

ID=18337594

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2340503A Pending JPH04207059A (en) 1990-11-30 1990-11-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH04207059A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2725833A1 (en) * 1994-07-20 1996-04-19 Nec Corp SEALING STRUCTURE FOR BAND-BEARING PACKAGING AND METHOD OF MAKING IT
JP2006186057A (en) * 2004-12-27 2006-07-13 Fujitsu Ltd Semiconductor device and manufacturing method thereof
JP2012227532A (en) * 2009-06-30 2012-11-15 Denso Corp Semiconductor device and manufacturing method of the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2725833A1 (en) * 1994-07-20 1996-04-19 Nec Corp SEALING STRUCTURE FOR BAND-BEARING PACKAGING AND METHOD OF MAKING IT
JP2006186057A (en) * 2004-12-27 2006-07-13 Fujitsu Ltd Semiconductor device and manufacturing method thereof
JP2012227532A (en) * 2009-06-30 2012-11-15 Denso Corp Semiconductor device and manufacturing method of the same

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