JPH04206841A - Wire bonding equipment for semiconductor device - Google Patents

Abstract

PURPOSE:To unnecessitate forming a ball, and exclude restrictions at the time of wire bonding, by forming a wire bonding equipment and making it possible to perform wire bonding in all directions with respect to the X-Y axes of wire bonding direction, when wedge wire bonding is executed. CONSTITUTION:The tip of a metal thin wire 5 is bent in a part where a capillary chip 3 moves to an electrode 2 arranged in a semiconductor element 1. The capillary chip 3 descends, and bonds the bent metal thin wire 5 to an electrode 2. Next, the capillary chip 3 which finished the bonding on the semiconductor element 1 moves onto a lead frame 7, and joins the metal thin wires 5. After a second bond is finished, the capillary chip 3 moves in the direction inverse to the direction where bonding has been performed, in the state that the capillary chip 3 ascends higher than at least the diameter (t) of the metal thin wire 5. A wire clamper 4 holds and pick up the metal thin wire 5. Thereby the metal thin wire 5 is cut out from the position subjected to the second bonding.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to an apparatus for wire bonding semiconductor devices, and
This relates to a semiconductor device wire-bonded using the method described on the left.

[Conventional technology]

FIGS. 3(a) to 3(g) show a conventional wire pounding device,
FIG. 3 is a process side view showing a state in which a semiconductor element and a lead frame are wire-bonded.

In the figure, (1) is a semiconductor element, (2) is an electrode on the semiconductor element, (3) is a capillary chip, (4) is a wire clamper, (5) is a thin metal wire, and (6) is formed at the tip of the thin metal wire. (7) is the lead frame, (8)
) is an electric l/-ch for forming a ball on a thin metal wire.

Next, the operation will be explained. Figure 3 shows the operation process for one wire of the wire pounding device, and Figures 3(a) to 3(a) -
The operation for one wire is completed in FIG. 3(g).

That is, as shown in FIG.
) on the electrode (2) placed on the capillary tip (
3) moves. Therein, a ball (6) is formed at the tip of the thin metal wire (5).

Next, as shown in Figure 3(b), the capillary chip (
3) descends to bond the ball (6) to the electrode (2) (1st bond) Next, as shown in FIGS. 3(C) and (cl), bonding to the semiconductor element (1)] is completed. The capillary chip (3) is moved onto the lead frame (7) and the thin metal wire (5) is bonded thereto. (2nd bond) Next, as shown in Figure 3(e), lead frame
At 8 (7), the capillary chip (3) that has completed bonding is lowered, and at this time, it is further raised from a certain height with the wire clamper (4) or thin metal wire (5) in between. 7) The thin metal wire (5) is cut from the upper honding part.

Next, as shown in Figure 3 ((to)), an electric current 1.
- A ball (6) is formed at the tip of the thin metal wire (5) by approaching the metal wire (8) and generating an electric spark.

[Invention or problem to be solved]

Conventional wire bonding equipment has the following configuration, so a ball must be made on the thin metal wire for each wire. Therefore, the size of the electrode to be ball-bonded is small, and it is difficult to form a ball on the metal wire for each wire. In addition to the required diameter, if the ball is made of thin metal wire or gold, it is possible to do so in the atmosphere, but in the case of other metals, a mechanism is required to prevent oxidation in a reducing atmosphere. There was a point.

This invention was made in order to solve the above-mentioned problems, and it is an object of the present invention to obtain a wire bonding device that does not require the formation of a ball and is not restricted in its operation during wire bonding in all X-Y directions. With the goal.

[Means for solving problems]

In the wire bonding device according to the present invention, the thin metal wire coming out of the capillary is bent to the side when the wire bonding is completed, so that the first wire bonding can be performed in that state.

[Effect]

The wire bonding device according to the present invention is formed so that the thin metal wire is bent laterally with respect to the capillary chip after being cut by the method of operating the capillary chip and the wire clamper after 2nd pounding.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings.

In Figure 1, (1) is a semiconductor element, (2) is an electrode on the semiconductor element, (3) is a capillary chip, (4) is a wire clamper, (5) is a thin metal wire, and (7) is a lead frame. be.

Next, the operation will be explained. FIG. 1 shows the operation steps for I wire by the wire bonding apparatus of the present invention, and the operation for one wire ends at FIG. 1 (a, j to FIG. 1 (f+).

That is, as shown in FIG. 1(a), a semiconductor element (1
), a capillary tip (3
) is moving, and the thin metal wire (5) is bent at its tip.

Next, as shown in FIG. 1 Tbl, the capillary tip (3) descends and the bent metal thin wire (5) is bonded to the electrode (2). (1,3t bond) Next,
As shown in Part 1 (C) and (dl), the semiconductor element (1)
Capillary chip with bonding completed on top (3)
moves onto the lead frame (7) and joins the thin metal wire (5). (2nd bond l") Next, as shown in FIG.
(1) and moves in the opposite direction from the direction in which the wire was bonded.

Next, as shown in Figure 1), attach the wire clamper (4)
By grasping the thin metal wire (5) and lifting the top,
The thin metal wire (5) is cut from the second bonded position, and the wire bonding is completed.

In the above embodiment, after the capillary chip (3) moves after the 2nd bond, the wire clamper (4) closes,
Although shown as rising, the wire clamper (4) may be closed while the capillary reach tip (3) is moving after the second bonding to cut the thin metal wire (5).

In addition, as shown in Fig. 2, after cutting the thin metal wire (3), by installing the thin metal wire bending bar (9), the capillary tip (3) or the bending bar (9) can be moved and the thin metal wire You can also bend it.

Further, the semiconductor element and the lead frame may be bonded in any order.

〔Effect of the invention〕

As described above, according to the present invention, there is no need for a ball-forming mechanism in the wire bonding device.2.The wire bond can be looped and moved in any direction in the X-Y direction. Furthermore, since there is no need to make a ball, wire bonding can be performed using inexpensive materials such as copper or aluminum.

Furthermore, since wire pounding is performed without forming balls, it is possible to reduce the size of the electrodes on the semiconductor element.

[Brief explanation of the drawing]

FIG. 1 (al-ge) is a process diagram of a wire bonding device according to an embodiment of the invention. FIGS. 2(a) and 2(b) are partial process diagrams of a wire bonding apparatus according to another embodiment of the present invention. FIGS. 3(a) to 3(g) are process diagrams of a conventional wire bonding apparatus. In the figure, (1) is a semiconductor element, (2) is an electrode, and (3) is a semiconductor element.
) is the gear pillar depth, (4) is the wire clamper, (
5) is a thin metal wire, (7) is a beam frame, and (9) is a bending bar. In addition, in the figures, the same reference numerals indicate the same or equivalent parts. Representative Masuo Daiiwa Figure 1 - Figure 2 Figure 4 Conductor Element Layout 2 Ear Clam Burner Thin Wire Figure 3

Claims (1)

[Claims] A wire bonder capable of performing wire bonding in all directions with respect to an X-Y axis in a bonding direction when performing wedge wire bonding in a wire bonder apparatus, and a wire bonder apparatus for a semiconductor device capable of performing the wire bonding.