JPH04205783A - Semiconductor memory - Google Patents

Abstract

PURPOSE:To offer a semiconductor memory whose power consumption is low by impressing voltage on a VBB by using a solar battery from the outside only in the case of standby. CONSTITUTION:A VBB terminal 2 is led out of a package 4 and the voltage is impressed on the VBB terminal 2 by using the solar battery when the semiconductor memory is in the standby state. Thus, a DRAM whose power consumption is low is offered.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor memory device, and particularly to a low power consumption type DRAM.

[Conventional technology]

FIG. 3 is a pin layout diagram of DIR of a conventional IMDRAM.

In the figure, (6) is a schematic diagram of the DIR package,
The top left is pin 1. (7) is the name of the pin. VB
Since the B terminal does not exist, it was generated inside the device.

[Problem to be solved by the invention]

Since the conventional semiconductor memory device is configured as described above, it consumes a large amount of current during operation.

In recent years, with the spread of notebook-sized personal computers and the like, DRAMs with low power consumption have become necessary.

Therefore, a semiconductor memory device that generates VBB internally is
In practice, there were problems that required some kind of improvement.

This invention has been made to solve the problems mentioned in -F, and it is an object of the invention to provide a semiconductor memory device with low power consumption.

[Means to solve the problem]

In the semiconductor device according to the present invention, the VBB terminal is taken out from the package, and when in the standby state (RAS signal and CAS signal clock are in the old gh state), a voltage is applied to the VBB terminal by a solar cell.

[Effect]

In the semiconductor memory device according to the present invention, power consumption is reduced by applying a voltage to VBB from the outside when the DRAM is in a standby state.

(Example〕 Hereinafter, this invention will be explained based on the drawings.

FIG. 1 is a schematic diagram showing a semiconductor memory device according to an embodiment of the present invention.

In the figure, (1) is a solar cell, (2) is a VBB terminal,
(3) is another signal terminal, and (4) is a package.

Take out the VBB terminal (2) from the package and connect the solar cell (
1) is used to apply a voltage to the VBB terminal when the semiconductor memory device is in a standby state.

In addition, although the solar cell (1) was used in the above embodiment, a lithium secondary battery or the like may be used as the voltage source as shown in FIG. In this case, the lithium secondary battery (5) is charged by using solar cells in parallel. Also, the package can be used for things other than DIR.

〔Effect of the invention〕

As described above, according to the present invention, by using a solar cell for the VBB terminal in the standby state of the DRAM, it is possible to provide a DRAM with low power consumption.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram showing a semiconductor memory device according to an embodiment of the present invention, FIG. 2 is a schematic diagram showing a semiconductor memory device according to another embodiment of the invention, and FIG. 3 is a schematic diagram showing a DIR pin of a conventional IMDRAM. It is a layout diagram. In the figure, (1) is a solar cell, (2) is a VBB terminal,
(3) is another signal terminal, (4) is a package, (5) is a lithium secondary battery, (6) is a schematic diagram of a DIP package,
(7) is the name of the pin. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims (1)

[Claims] A semiconductor memory device characterized in that the device is equipped with a VBB terminal, and VBB is externally applied by a solar cell only during standby.