[go: up one dir, main page]

JPH04199523A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH04199523A
JPH04199523A JP2335353A JP33535390A JPH04199523A JP H04199523 A JPH04199523 A JP H04199523A JP 2335353 A JP2335353 A JP 2335353A JP 33535390 A JP33535390 A JP 33535390A JP H04199523 A JPH04199523 A JP H04199523A
Authority
JP
Japan
Prior art keywords
bonding pads
semiconductor substrate
row
pads
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2335353A
Other languages
Japanese (ja)
Inventor
Nobuyuki Osawa
伸行 大澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2335353A priority Critical patent/JPH04199523A/en
Publication of JPH04199523A publication Critical patent/JPH04199523A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0605Shape
    • H01L2224/06051Bonding areas having different shapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061Disposition
    • H01L2224/0612Layout
    • H01L2224/0615Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
    • H01L2224/06153Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry with a staggered arrangement, e.g. depopulated array
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/494Connecting portions
    • H01L2224/4943Connecting portions the connecting portions being staggered
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To increase the number of bonding pads without decreasing an interval between bonding pads on each row by arranging polygonal bonding pads in one or more rows parallel to respective sides of a semiconductor substrate alternately in every row. CONSTITUTION:Rows of polygonal bonding pads 1 are arranged in two rows in parallel to each side of a semiconductor substrate 2 on a periphery of the semiconductor substrate 2. Bonding pads 1a, 1b having polygonal shapes and the same area are placed so that their centers do not align with each other. That is one or more rows of the bonding pads 1 having a polygonal shape are placed in parallel with each side of the semiconductor substrate 2 alternately in every row. Thus without decreasing the area of the bonding pads and also without reducing an interval, between the bonding pads 1 in each row, the number of the bonding pads can be increased.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は半導体装置に関し、詳しくは半導体基板上の
ホンディングバット形状およホンディングバット配列に
関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a semiconductor device, and more particularly, to the shape and arrangement of honda bats on a semiconductor substrate.

〔従来の技術〕[Conventional technology]

第3図は従来の半導体装置を示す全体図であり、同図は
半導体基板上のボンディングパッド形状およびボンディ
ングバット配列を示している。図において、(2)は半
導体基板、(3)は半導体基板(2)上に四角形の形状
を持つボンディングパッドである。
FIG. 3 is an overall view showing a conventional semiconductor device, and the same figure shows the shape and arrangement of bonding pads on a semiconductor substrate. In the figure, (2) is a semiconductor substrate, and (3) is a rectangular bonding pad on the semiconductor substrate (2).

上記ホンディングバット(3)は半導体基板(2)周辺
に、上記半導体基板(2)の各辺と並行で1列に配置さ
れている。
The homing bats (3) are arranged around the semiconductor substrate (2) in a row parallel to each side of the semiconductor substrate (2).

第4図は第3図の一部を拡大した図であり、図において
、(4)はホンディングパット間の間隔である。従来の
半導体装置ではホンディングパット間(4)の間隔を減
少させることによって、ホンディングパット数の増加を
図っている。
FIG. 4 is an enlarged view of a part of FIG. 3, and in the figure, (4) is the spacing between the pads. In conventional semiconductor devices, the number of honding pads is increased by reducing the distance between the honding pads (4).

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

従来の半導体装置、いわばポンディングバッドの形状及
び配列は以上のように構成されているので、ボンディン
グパット数を増やすには、ホンディングバット面積を縮
小するか、ホンディングパット間の間隔を減少させなけ
ればならないという問題点かあった。
Conventional semiconductor devices, so to speak, the shape and arrangement of bonding pads are configured as described above, so in order to increase the number of bonding pads, it is necessary to reduce the area of the bonding pads or reduce the spacing between the bonding pads. There was a problem that it had to be done.

この発明は上記のような問題点を解消するためになされ
たもので、ホンディングパソ)へ面積は従来のままで、
ホンディングパット間の間隔を減少させず、ホンディン
グパット数を増加することかできる半導体装置を得るこ
とを目的とする。
This invention was made to solve the above-mentioned problems, and the area remains the same as before.
To obtain a semiconductor device capable of increasing the number of honding pads without reducing the interval between honding pads.

〔課題を解決するための手段〕[Means to solve the problem]

この発明に係る半導体装置は、半導体基板上に形成され
ている多角形の形状を持つボンディングバットと、前記
ボンディングバットか半導体基板上に少なくとも1つ以
上配置しているホンディングバット列か、少なくとも1
列以上配置しているものである。
The semiconductor device according to the present invention includes a bonding bat having a polygonal shape formed on a semiconductor substrate, and at least one row of bonding bats arranged on the semiconductor substrate.
They are arranged in more than one row.

〔作用〕[Effect]

この発明における半導体装置は、多角形のホンディング
バッドを半導体基板周辺上に、半導体基板各辺と並行に
少なくとも1列以上、各列ごと交互に配置することによ
り、各列のボンディングパット間の間隔を減少させず、
ホンディングバット面積を縮小せずに済む。
In the semiconductor device of the present invention, polygonal bonding pads are arranged on the periphery of the semiconductor substrate in at least one row or more in parallel with each side of the semiconductor substrate, and the distance between the bonding pads in each row is increased. without reducing
There is no need to reduce the area of the honda bat.

〔実施例〕〔Example〕

以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.

第1図はこの発明の一実施例による半導体装置の全体図
である。図において、(1)は多角形の形状を持つホン
ディングバット、(2)は半導体基板である。ここでホ
ンディングバット(1)の各列は半導体基板(2)周辺
上に半導体基板(2)の各辺と並行に2列で配置してい
る。
FIG. 1 is an overall diagram of a semiconductor device according to an embodiment of the present invention. In the figure, (1) is a homing bat having a polygonal shape, and (2) is a semiconductor substrate. Here, each row of bonding bats (1) is arranged in two rows on the periphery of the semiconductor substrate (2) in parallel with each side of the semiconductor substrate (2).

第2図は第1図の一部を拡大した図であり、図において
、(Ia)、 (Ib’)は多角形の形状を持ちかつ同
面積を有するホンディングバy l’、(4)はホシデ
ィングパット間の間隔である。ホンディングバッド(1
b)はホンディングバット(1a)と中心か重ならない
ように配置してあり、ホンデイ〉グバット間(4)の間
隔は等しいものである。
Fig. 2 is an enlarged view of a part of Fig. 1. In the figure, (Ia) and (Ib') are polygonal shapes and have the same area, and (4) is a homing board. This is the spacing between the pads. Honding Bad (1)
b) is arranged so as not to overlap the center of the bat (1a), and the distance between the bats (4) is equal.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明によれは従来のものと同面積を
有する、多角形の形状を持つホンディングバッドを、半
導体基板周辺上に、半導体基板各辺と並行に少なくとも
1列以上、各列ごど交互に配置するように構成したので
、ホンデイ〉グバ。
As described above, according to the present invention, boarding pads each having a polygonal shape and having the same area as a conventional one are arranged on the periphery of a semiconductor substrate in at least one row or more in parallel with each side of the semiconductor substrate. I configured it so that the words are arranged alternately, so it's easy to use.

ト面積を縮小させず、かつ各列でのホンディングバット
間の間隔を減少させずに、ホシディシグバソト数を増加
させることかできる。
It is possible to increase the number of bats without reducing the bat area and without reducing the spacing between bats in each row.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例による半導体装置を示す全
体図、第2図は第1図の一部を拡大した閃、第3図は従
来の半導体装置を示す全体図、第・1図は第3図の一部
を拡大した図である。 図において、(1)は多角形の形状を持つホンディング
バッド、(Ia)、 (lb)は多角形の形状を持ちか
一つ同面積を有すホンディングバット、(2)は半導体
基板、(3)は四角形のホンディングバット、(4)は
ボンディングパット間の間隔である。 なお、図中、同一符号は同−又は相当部分を示す。 代理人   大  岩  増  雄 El 図 第2図 ff13 区
FIG. 1 is an overall view showing a semiconductor device according to an embodiment of the present invention, FIG. 2 is an enlarged portion of FIG. 1, and FIG. 3 is an overall view showing a conventional semiconductor device. is an enlarged view of a part of FIG. 3. In the figure, (1) is a bonding pad having a polygonal shape, (Ia) and (lb) are bonding bats having a polygonal shape or having the same area, (2) is a semiconductor substrate, (3) is a rectangular bonding butt, and (4) is an interval between bonding pads. In addition, in the figures, the same reference numerals indicate the same or corresponding parts. Agent Masuo Oiwa El Figure 2 ff13 Ward

Claims (1)

【特許請求の範囲】[Claims] 半導体基板上に形成されている多角形の形状を持つボン
ディングパッドと、前記ボンディングパッドが半導体基
板上に少なくとも1つ以上配置しているボンディングパ
ッド列が、少なくとも1列以上配置していることを特徴
とする半導体装置。
A bonding pad having a polygonal shape formed on a semiconductor substrate and at least one row of bonding pads in which at least one bonding pad is arranged on the semiconductor substrate are arranged. semiconductor device.
JP2335353A 1990-11-28 1990-11-28 Semiconductor device Pending JPH04199523A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2335353A JPH04199523A (en) 1990-11-28 1990-11-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2335353A JPH04199523A (en) 1990-11-28 1990-11-28 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH04199523A true JPH04199523A (en) 1992-07-20

Family

ID=18287581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2335353A Pending JPH04199523A (en) 1990-11-28 1990-11-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH04199523A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5635424A (en) * 1992-07-17 1997-06-03 Lsi Logic Corporation High-density bond pad layout arrangements for semiconductor dies, and connecting to the bond pads
DE10231647A1 (en) * 2002-07-12 2003-10-23 Infineon Technologies Ag Connecting pads for integrated circuit have first and second contact surfaces arranged so edge of first and edge of second are facing each other and offset so rows transversely mesh with each other

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5635424A (en) * 1992-07-17 1997-06-03 Lsi Logic Corporation High-density bond pad layout arrangements for semiconductor dies, and connecting to the bond pads
DE10231647A1 (en) * 2002-07-12 2003-10-23 Infineon Technologies Ag Connecting pads for integrated circuit have first and second contact surfaces arranged so edge of first and edge of second are facing each other and offset so rows transversely mesh with each other

Similar Documents

Publication Publication Date Title
JPH04199523A (en) Semiconductor device
JPH0274046A (en) Semiconductor integrated circuit device
JPH04180668A (en) Lead frame for semiconductor device
JPS60146364U (en) light emitting diode array head
JP2024010613A5 (en)
JPH0541557Y2 (en)
JPS62199848U (en)
JPH02273962A (en) Lead frame
JPH04163928A (en) semiconductor equipment
JPH0574389A (en) Lead of fluorescent display tube
JPH0682781B2 (en) Semiconductor device
JPH01278736A (en) semiconductor equipment
JPH0450742B2 (en)
JPS60139290U (en) hourglass
JPS59162896U (en) clamping tool
JPH04163953A (en) Package for semiconductor device
JPH04176158A (en) Surface-mounting type semiconductor device
KR970012956A (en) TCP structure
JPS5969746U (en) underwear
JPS60119803U (en) Accelerator setting device code plate
JPH0248990U (en)
JPS6022524U (en) rotary screen
JPH04119651A (en) Semiconductor device
JPH0265278A (en) One-dimensional image sensor
JPH0499052A (en) Lead frame