JPH04198039A - Insulating paste for thick-film circuit - Google Patents
Insulating paste for thick-film circuitInfo
- Publication number
- JPH04198039A JPH04198039A JP32743090A JP32743090A JPH04198039A JP H04198039 A JPH04198039 A JP H04198039A JP 32743090 A JP32743090 A JP 32743090A JP 32743090 A JP32743090 A JP 32743090A JP H04198039 A JPH04198039 A JP H04198039A
- Authority
- JP
- Japan
- Prior art keywords
- insulating paste
- glass
- filler
- mixture
- thermal expansion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011521 glass Substances 0.000 claims abstract description 43
- 239000000203 mixture Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000000945 filler Substances 0.000 claims abstract description 15
- 239000000843 powder Substances 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims abstract description 10
- 229910001597 celsian Inorganic materials 0.000 claims abstract description 5
- 239000000919 ceramic Substances 0.000 claims abstract description 5
- 229910052661 anorthite Inorganic materials 0.000 claims abstract description 3
- GWWPLLOVYSCJIO-UHFFFAOYSA-N dialuminum;calcium;disilicate Chemical compound [Al+3].[Al+3].[Ca+2].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-] GWWPLLOVYSCJIO-UHFFFAOYSA-N 0.000 claims abstract description 3
- 238000010304 firing Methods 0.000 claims description 9
- 239000002244 precipitate Substances 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 3
- 229910014780 CaAl2 Inorganic materials 0.000 abstract 1
- 238000007496 glass forming Methods 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 10
- 239000004020 conductor Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910003480 inorganic solid Inorganic materials 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 1
- 101100481408 Danio rerio tie2 gene Proteins 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 101100481410 Mus musculus Tek gene Proteins 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 1
- 229940088601 alpha-terpineol Drugs 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910021489 α-quartz Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
Landscapes
- Glass Compositions (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は厚膜回路用絶縁ペーストに関するもので、さら
に詳細には、情報機器、コンピューター等の電子回路に
使用される厚膜回路の多層配線のための絶縁ペーストに
関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an insulating paste for thick film circuits, and more specifically to multilayer wiring for thick film circuits used in electronic circuits such as information equipment and computers. This relates to insulating paste for.
（従来技術）
厚膜回路はアルミナ等のセラミック基板表面にＡｕ、Ａ
ｇ／Ｐｄ等の厚膜導体、ＲｕＯ２などを導電成分とする
厚膜抵抗をスクリーン印刷と、高温での焼成プロセスに
よって形成される。(Conventional technology) Thick film circuits are made of Au, A, etc. on the surface of a ceramic substrate such as alumina.
A thick film conductor such as g/Pd or a thick film resistor having a conductive component such as RuO2 is formed by screen printing and a firing process at a high temperature.
近年、厚膜回路の小形、高密度化の要求が高まり、配線
の多層化が進められている。厚膜多層配線の絶縁層材料
には、一般に結晶化ガラスまたは耐熱性酸化物等のフィ
ラーを含む非晶質ガラスよりなる絶縁ペーストが用いら
れる。結晶化ガラスは、セラミック基板上での焼成過程
で結晶化するものであって、その熱膨張係数は、厚膜回
路に最も普通に用いられる９６％Ａｌ２Ｏを基板の熱膨
張係数より小さいのが普通である。そのため焼成後の基
板に大きな反りが生ずるので、局部的クロス配線や、導
体２層配線に主に用いられる。一方非晶質ガラスとフォ
ラ−の混合系は、ガラス組成やフィラーの種類の選定に
より、その熱膨張を基板に合致させることが容品なため
、多層配線の絶縁層用により適している。In recent years, there has been an increasing demand for smaller and higher density thick film circuits, and wiring is becoming more multi-layered. As the insulating layer material for thick film multilayer wiring, an insulating paste made of crystallized glass or an amorphous glass containing a filler such as a heat-resistant oxide is generally used. Crystallized glass is crystallized during the firing process on a ceramic substrate, and its coefficient of thermal expansion is usually smaller than that of the substrate, which is 96% Al2O, which is most commonly used for thick film circuits. It is. As a result, large warpage occurs in the substrate after firing, so it is mainly used for local cross wiring and two-layer conductor wiring. On the other hand, a mixed system of amorphous glass and Forer is more suitable for the insulating layer of multilayer wiring because its thermal expansion can be matched to the substrate by selecting the glass composition and the type of filler.
（従来技術の問題点） 厚膜回路で最も多く使用されるＡｇ／Ｐｄ。(Problems with conventional technology) Ag/Pd is most commonly used in thick film circuits.
Ａｇ／Ｐｔなど、Ａｇを含有する導体で形成された多層
配線回路では、絶縁層を挟んで対向する導体間に、直流
電圧を印加して高温で保持すると、Ａｇのイオンマイグ
レーションにより、絶縁層の絶縁破壊電圧が低下する現
象がある。同一試験条件でのＡｇのマイグレーション速
度は、結晶化ガラスでは小さいが、非晶質ガラスでは非
常に大きく、フィラーを混合しても結晶化ガラスに比べ
ると大きいことが判明した。このような材料を用いて高
密度な多層配線回路を製作しても、例えば自動車のエン
ジンルームのような高温にさらされる場所で使用する場
合や、高電圧で使用する場合には、回路の信頼性が大変
問題になる。In a multilayer wiring circuit formed with a conductor containing Ag such as Ag/Pt, when a DC voltage is applied between conductors facing each other with an insulating layer in between and held at high temperature, ion migration of Ag causes damage to the insulating layer. There is a phenomenon in which the dielectric breakdown voltage decreases. It was found that the migration rate of Ag under the same test conditions was small in crystallized glass, but very high in amorphous glass, and even when a filler was mixed, it was higher than in crystallized glass. Even if high-density multilayer wiring circuits are manufactured using such materials, the reliability of the circuits may deteriorate when used in places exposed to high temperatures, such as the engine room of a car, or when used at high voltages. Gender becomes a big issue.
（発明の目的）
本発明は、上記した問題点を解決し、高信頼度の厚膜多
層回路を形成するための絶縁ペーストを提供するもので
ある。(Object of the Invention) The present invention solves the above problems and provides an insulating paste for forming a highly reliable thick film multilayer circuit.
この目的を達成するために、従来の非晶質ガラスとフィ
ラーの混合系絶縁ペーストに、結晶性ガラスを混合した
絶縁ペーストを試作し、Ａｇ／Ｐｄ系導体を用いて厚膜
コンデンサを形成して、２００Ｖの直流電圧を負荷し、
１５０℃で長時間保ったのち絶縁破壊電圧を測定したと
ころ、絶縁破壊電圧の低下が著しく改善されることを見
出した。この絶縁ペーストの焼成膜をＸ線回折で調べた
ところ、明らかに結晶性ガラスから析出した結晶が認め
られ、これが絶縁破壊電圧の低下を抑制したものと考え
られる。To achieve this objective, we prototyped an insulating paste that mixed crystalline glass with the conventional insulating paste of a mixture of amorphous glass and filler, and formed a thick film capacitor using Ag/Pd-based conductors. , load a DC voltage of 200V,
When the dielectric breakdown voltage was measured after being kept at 150° C. for a long time, it was found that the decrease in dielectric breakdown voltage was significantly improved. When the fired film of this insulating paste was examined by X-ray diffraction, crystals precipitated from the crystalline glass were clearly observed, and it is thought that this suppressed the decrease in dielectric breakdown voltage.
（実施例） 以下、実施例につき詳細に説明する。(Example) Examples will be described in detail below.
実施例１
重量比で、ＳｉＯ□５４．９％、Ｂ２０゜５、０％、Ｃ
ａ０７．４％、ＭｇＯ２，５％、ＰｂＯ１７，６％、Ａ
Ｉ□ ＯＮ ８． ４％、Ｎａ２Ｏ２，６％、Ｋ２Ｏ
１，６％の組成で、熱膨張係数が７２Ｘ１０−’／℃（
２５〜３００℃）の非晶質ガラス粉末５５％に、フィラ
ーとしてＡＩ。Example 1 Weight ratio: SiO□54.9%, B20°5.0%, C
a07.4%, MgO2,5%, PbO17,6%, A
I□ ON 8. 4%, Na2O2, 6%, K2O
With a composition of 1.6%, the coefficient of thermal expansion is 72X10-'/℃ (
55% of amorphous glass powder (25-300°C) with AI as a filler.
ｏｑ ２２．５％、ＣａＺｒＯ３２２，５％を混合し、
エチルセルロースのα−ターピネオール溶液に分散、混
練して作成した絶縁ペーストに、重量比で、５ｉＯ２３
５，６％、Ｂ２０３３．１％、ＣａＯ１６，９％、Ｚｎ
Ｏ１９，２％、Ａ１２０３１１．３％、Ｔ ｒ ０２１
３． ９％の組成で、焼成中にアノーサイトの結晶を析
出する結晶性ガラス粉末（ガラスＡ）を無機固形分全量
に対して１０．２０．３０．５０％になるように混合し
た絶縁ペーストを作成した。Mix 22.5% oq and 222.5% CaZrO,
Insulating paste prepared by dispersing and kneading ethylcellulose in α-terpineol solution, 5iO23
5.6%, B2033.1%, CaO16.9%, Zn
O19.2%, A120311.3%, T r 021
3. Create an insulating paste with a composition of 9% and a mixture of crystalline glass powder (glass A) that precipitates anorthite crystals during firing to a ratio of 10.20.30.50% to the total inorganic solid content. did.
実施例２
実施例１と同じ非晶質ガラスとフィラーの混合系絶縁ペ
ーストに、重量比で、５ｉｎ２３５．６％、Ｂ２０，３
．１％、５ｒＯ１６，９％、Ｚｎ０１９．２％、Ａｌ２
Ｏ，１１，３％、Ｔ ｉ ０２１３．９％、の組成で、
焼成中スローツナイトの結晶を析出する結晶性ガラス粉
末（ガラスＢ）、重量比で、ＳｉＯ：、３１．５％、８
２０３３．９％、ＭｇＯ２，５％、ＣａＯ３，７％、Ｂ
ａＯ２５，１％、ＺｎＯ１１，８％、Ａｌ２０３１０．
５％、Ｔ ＋ ０２１１． ０％の組成で、焼成中セル
シアンの結晶を析出する結晶性ガラス粉末（ガラスＣ）
及び重量比で５ｉｎ２３３．６％、Ｂ２０．３．４％、
ＭｇＯ１，３％、５ｒＯ１１，４％、ＢａＯ１１，４％
、ＺｎＯ１５，５％、ＡＩ２０３１０．９％、Ｔｉｅ２
１２．５％の組成で、焼成中スローツナイトとセルシア
ンの結晶を析出する結晶性ガラス粉末（ガラスＤ）をそ
れぞれ無機固形分全量に対して１０％になるように混合
した絶縁ペーストを作成した。Example 2 To the same amorphous glass and filler mixed insulating paste as in Example 1, 5in235.6%, B20.3 by weight ratio was added.
．． 1%, 5rO16.9%, Zn019.2%, Al2
With a composition of O, 11.3%, Ti 0213.9%,
Crystalline glass powder (glass B) that precipitates sloetonite crystals during firing, weight ratio: SiO:, 31.5%, 8
2033.9%, MgO2,5%, CaO3,7%, B
aO25.1%, ZnO11.8%, Al20310.
5%, T+0211. Crystalline glass powder (Glass C) that has a composition of 0% and precipitates Celsian crystals during firing.
and weight ratio 5in233.6%, B20.3.4%,
MgO1.3%, 5rO11.4%, BaO11.4%
, ZnO15.5%, AI20310.9%, Tie2
An insulating paste was prepared by mixing crystalline glass powder (glass D), which precipitates sloetonite and celsian crystals during firing, with a composition of 12.5%, each at a concentration of 10% based on the total inorganic solid content. .
実施例３
重量比で、５ｉｏ２５！５．４３％、Ｂ２０ｍ４．８％
、Ｃａ０７．５％、ＭｇＯ２，５％、ＢａＯ４，１％、
ＰｂＯ１７，０％、Ａ Ｉ ２０ 。Example 3 Weight ratio: 5io25!5.43%, B20m4.8%
, Ca07.5%, MgO2,5%, BaO4,1%,
PbO 17.0%, A I 20 .
８．５％の組成で、熱膨張係数が６３Ｘ１０−７／℃（
２５〜３００℃）の非晶質ガラス粉末５５％にフィラー
としてＡｌ２０３１０．５％、ＳｉＯ２（α−石英）１
２．０％、ＣａＺｒ０ｔ２２．５％を混合し、エチルセ
ルロースのα−テルピネオール溶液に分散、混練して作
成した絶縁ペーストに、実施例１の結晶性ガラス粉末（
ガラスＡ）を無機固形分全量に対して１０％になるよう
に混合した絶縁ペーストを作成した。With a composition of 8.5%, the coefficient of thermal expansion is 63X10-7/℃ (
55% amorphous glass powder (25~300℃), 10.5% Al203 and 1 SiO2 (α-quartz) as fillers.
The crystalline glass powder of Example 1 (
An insulating paste was prepared by mixing glass A) in an amount of 10% based on the total inorganic solid content.
以上の実施例で作成した各々の絶縁ペーストについて以
下の実験を行なった。The following experiments were conducted on each of the insulating pastes prepared in the above examples.
実験例１
２５．４ｍｍｘ２５．４ｍｍＸ０．６２５ｍｍｔの９６
％Ａ１□０３基板上にＡｇ／Ｐｄ＝８０／２０の導体ペ
ーストを印刷、焼成してコンデンサの下部電極を形成、
この上に前記絶縁ペーストを印刷し、ピーク温度８５０
℃、ｒ−０分の条件で焼成した後、さらに絶縁ペースト
を印刷、乾燥しその上に前記導体ペーストを印刷して、
同じ条件で焼成して厚膜コンデンサを作成した。このコ
ンデンサの上部電極の面積は６０ｍｍ’であった。Experimental example 1 25.4mm x 25.4mm x 0.625mmt 96
%A1□03 Print a conductive paste of Ag/Pd=80/20 on the board and bake it to form the lower electrode of the capacitor.
The insulating paste was printed on top of this, and the peak temperature was 850.
After baking under the conditions of ℃ and r-0 minutes, an insulating paste is further printed and dried, and the conductive paste is printed on it,
Thick film capacitors were created by firing under the same conditions. The area of the upper electrode of this capacitor was 60 mm'.
厚膜コンデンサは各々の絶縁ペーストで６０個ずつ作成
し、うち３０個ずつとり出し並列に接続して上、下電極
間に直流電圧２００■を印加、１５０℃で５００ｈ保持
した。残りの３０個ずつと共に個々のコンデンサの絶縁
破壊電圧を測定し、高温負荷試験における絶縁破壊電圧
の低下率を求めた。結果を比較例の場合を含めて表１に
示した。Sixty thick film capacitors were made from each type of insulating paste, and 30 of them were taken out and connected in parallel, a DC voltage of 200 cm was applied between the upper and lower electrodes, and the capacitors were maintained at 150° C. for 500 hours. The dielectric breakdown voltage of each of the remaining 30 capacitors was measured, and the rate of decrease in dielectric breakdown voltage in the high temperature load test was determined. The results are shown in Table 1 including the comparative example.
また、実施例１の結晶性ガラスを２０％混合した場合の
、高温負荷試験前後の絶縁破壊電圧の分布を例として図
１に示す。Further, FIG. 1 shows an example of the distribution of dielectric breakdown voltage before and after the high temperature load test when 20% of the crystalline glass of Example 1 is mixed.
実験例２
８０ｍｍｘ８０ｍｍＸ０．６２５ｍｍｔの９６％Ａｌ２
Ｏ３基板に絶縁ペーストをドクターブレード法で塗布し
、ピーク温度８５０℃、１０分の条件で焼成し、その上
に再度同様に塗布、焼成した。この絶縁ペースト塗布面
を、表面粗さ計を用いて基板中心を通るｘ、ｙ方向にス
キャンして、図２に示すような図形から基板の反りを測
定した。Experimental example 2 96% Al2 of 80mm x 80mm x 0.625mmt
An insulating paste was applied to the O3 substrate using a doctor blade method, and fired at a peak temperature of 850°C for 10 minutes, and then applied and fired again in the same manner. The surface to which the insulating paste was applied was scanned in the x and y directions passing through the center of the substrate using a surface roughness meter, and the warpage of the substrate was measured from a pattern as shown in FIG.
結果を基板の長さ１ｃｍ当たりに換算して比較例の場合
を含めて表１に示した。The results were calculated per 1 cm of substrate length and are shown in Table 1, including the comparative example.
比較例１ 実施例１の非晶質ガラスとフィラー混合ペースト。Comparative example 1 Amorphous glass and filler mixed paste of Example 1.
比較例２ 実施例１の非晶質ガラスのみのペースト。Comparative example 2 A paste containing only amorphous glass of Example 1.
比較例３ 実施例３の非晶質ガラスとフィラー混合ペースト。Comparative example 3 Amorphous glass and filler mixed paste of Example 3.
比較例４ 実施例３の非晶質ガラスのみのペースト。Comparative example 4 Paste of Example 3 containing only amorphous glass.
比較例５
実施例１及び実施例３の結晶性ガラスのみのペーストで
、結晶化後の熱膨張係数は５２Ｘ１０−７／ＴＩ：（２
５〜３００℃）である。Comparative Example 5 The paste of only the crystalline glass of Examples 1 and 3 had a coefficient of thermal expansion after crystallization of 52X10-7/TI: (2
5-300°C).
比較例１の絶縁ペーストを用いた厚膜コンデンサの高温
負荷試験前後の絶縁破壊電圧の分布を図３に示した。FIG. 3 shows the distribution of dielectric breakdown voltage before and after the high temperature load test of the thick film capacitor using the insulation paste of Comparative Example 1.
（以下余白）
表１よりわかるように、高温負荷試験における絶縁破壊
電圧の低下は非晶質ガラス系の比較例に比べて著しく改
善され、比較例５の結晶化ガラスの場合と同様である。(The following is a blank space) As can be seen from Table 1, the reduction in dielectric breakdown voltage in the high-temperature load test was significantly improved compared to the amorphous glass-based comparative example, and was similar to that of the crystallized glass of comparative example 5.
また、基板の反りは、非晶質ガラスとフィラーの混合物
の熱膨張係数が基板のそれより大きい（基板の反りが負
になる）ものを使用すれば、結晶性ガラスの混合により
、絶縁層被覆側がわずかに凸になる好ましい値が得られ
ている。In addition, if you use a mixture of amorphous glass and filler whose thermal expansion coefficient is larger than that of the substrate (the substrate warpage becomes negative), the warpage of the substrate can be reduced by mixing the crystalline glass. A desirable value with slightly convex sides has been obtained.
（発明の効果）
以上詳述したように、本発明によれば高温、高電圧負荷
の厳しい条件で使用してもＡｇマイグレーションによる
絶縁特性の劣化がなく、且つ熱膨張をセラミック基板に
容易に適合できるので、安価で高信顆度の高密度厚膜多
層回路が得られる。(Effects of the Invention) As detailed above, according to the present invention, there is no deterioration of insulation properties due to Ag migration even when used under severe conditions of high temperature and high voltage loads, and thermal expansion can be easily adapted to ceramic substrates. As a result, a high-density thick film multilayer circuit with high reliability can be obtained at low cost.
図１は本発明実施例の絶縁ペーストを用いた厚膜コンデ
ンサの高温負荷試験前後における絶縁破壊電圧の分布図
、図２は絶縁ペーストをセラミック基板に被覆した場合
の基板の反りを測定するため、表面粗さ計でスキャンし
た実例図、図３は比較例の絶縁ペーストを用いた厚膜コ
ンデンサの高温負荷試験前後における絶縁破壊電圧の分
布図である。
出願人 田中マッセイ株式会社Figure 1 is a distribution diagram of dielectric breakdown voltage before and after a high temperature load test of a thick film capacitor using an insulating paste according to an example of the present invention, and Figure 2 is a diagram showing the distribution of dielectric breakdown voltage before and after a high temperature load test using an insulating paste according to an example of the present invention. FIG. 3 is an actual diagram scanned with a surface roughness meter, and is a distribution diagram of dielectric breakdown voltage before and after a high-temperature load test of a thick film capacitor using an insulating paste of a comparative example. Applicant Tanaka Massey Co., Ltd.
Claims (3)
ラーを基本成分とし、これに、焼成時に結晶が析出する
結晶性ガラス粉末を混合したものよりなることを特徴と
した厚膜回路用絶縁ペースト。(1) For thick film circuits characterized by having an inorganic component consisting of an amorphous glass powder and a crystalline filler as basic components, mixed with a crystalline glass powder that precipitates crystals during firing. insulation paste.
使用するセラミック基板の熱膨張係数より大きい値を有
することを特徴とする特許請求の範囲第１項の絶縁ペー
スト。(2) The insulating paste according to claim 1, wherein the thermal expansion coefficient of the mixture of the amorphous glass and the filler is larger than the thermal expansion coefficient of the ceramic substrate used.
イト（ＣａＡｌ＿２Ｓｉ＿２Ｏ＿８）、スローソナイト
（ＳｒＡｌ＿２Ｓｉ＿２Ｏ＿８）及びセルシアン（Ｂａ
Ａｌ＿２Ｓｉ＿２Ｏ＿８）のいずれか、またはこれらの
２種以上の混合物からなる結晶を析出することを特徴と
する特許請求の範囲第１項記載の絶縁ペースト。(3) Crystalline glass has anorthite (CaAl_2Si_2O_8), slowsonite (SrAl_2Si_2O_8) and celsian (Ba
The insulating paste according to claim 1, characterized in that crystals consisting of either Al_2Si_2O_8) or a mixture of two or more thereof are precipitated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2327430A JP3017530B2 (en) | 1990-11-28 | 1990-11-28 | Insulating paste for thick film circuits |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2327430A JP3017530B2 (en) | 1990-11-28 | 1990-11-28 | Insulating paste for thick film circuits |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04198039A true JPH04198039A (en) | 1992-07-17 |
| JP3017530B2 JP3017530B2 (en) | 2000-03-13 |
Family
ID=18199085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2327430A Expired - Fee Related JP3017530B2 (en) | 1990-11-28 | 1990-11-28 | Insulating paste for thick film circuits |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3017530B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0621245A1 (en) * | 1993-04-22 | 1994-10-26 | Nec Corporation | Multilayer glass ceramic substrate and method of fabricating the same |
| WO1997008773A1 (en) * | 1995-08-25 | 1997-03-06 | Matsushita Electric Industrial Co., Ltd. | Dielectric filter, production method therefor and package member obtained by packaging the filter |
| WO1999013270A1 (en) | 1997-09-08 | 1999-03-18 | Tanaka Kikinzoku Kogyo K.K. | Deodorizing apparatus and deodorizing method |
| JP2007294862A (en) * | 2006-03-28 | 2007-11-08 | Kyocera Corp | Board and circuit board using the same |
| JP2008060230A (en) * | 2006-08-30 | 2008-03-13 | Denso Corp | Hybrid integrated circuit device and its manufacturing method |
| JP2018199599A (en) * | 2017-05-27 | 2018-12-20 | 日本山村硝子株式会社 | Glass composition for encapsulation |
-
1990
- 1990-11-28 JP JP2327430A patent/JP3017530B2/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0621245A1 (en) * | 1993-04-22 | 1994-10-26 | Nec Corporation | Multilayer glass ceramic substrate and method of fabricating the same |
| US5506058A (en) * | 1993-04-22 | 1996-04-09 | Nec Corporation | Mutlilayer glass ceramic substrate and method of fabricating the same |
| WO1997008773A1 (en) * | 1995-08-25 | 1997-03-06 | Matsushita Electric Industrial Co., Ltd. | Dielectric filter, production method therefor and package member obtained by packaging the filter |
| JPH0964612A (en) * | 1995-08-25 | 1997-03-07 | Matsushita Electric Ind Co Ltd | Dielectric filter, its production and package body packaging the filter |
| US5864263A (en) * | 1995-08-25 | 1999-01-26 | Matsushita Electric Industrial Co., Ltd. | Dielectric filter with protective film covering the edges of the input/output electrodes and external electrode |
| WO1999013270A1 (en) | 1997-09-08 | 1999-03-18 | Tanaka Kikinzoku Kogyo K.K. | Deodorizing apparatus and deodorizing method |
| JP2007294862A (en) * | 2006-03-28 | 2007-11-08 | Kyocera Corp | Board and circuit board using the same |
| JP2008060230A (en) * | 2006-08-30 | 2008-03-13 | Denso Corp | Hybrid integrated circuit device and its manufacturing method |
| JP2018199599A (en) * | 2017-05-27 | 2018-12-20 | 日本山村硝子株式会社 | Glass composition for encapsulation |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3017530B2 (en) | 2000-03-13 |
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