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JPH04188847A - Adhesive tape - Google Patents

Adhesive tape

Info

Publication number
JPH04188847A
JPH04188847A JP2318911A JP31891190A JPH04188847A JP H04188847 A JPH04188847 A JP H04188847A JP 2318911 A JP2318911 A JP 2318911A JP 31891190 A JP31891190 A JP 31891190A JP H04188847 A JPH04188847 A JP H04188847A
Authority
JP
Japan
Prior art keywords
layer
bonding material
adhesive tape
semiconductor wafer
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2318911A
Other languages
Japanese (ja)
Inventor
Toshio Takeuchi
竹内　利夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2318911A priority Critical patent/JPH04188847A/en
Publication of JPH04188847A publication Critical patent/JPH04188847A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Dicing (AREA)

Abstract

PURPOSE:To omit a process for arranging a bonding material on a die pad and to contrive a reduction in the size of a device by a method wherein an adhesive tape is constituted of a base material, an ultraviolet curing type adhesive material layer and a bonding material layer. CONSTITUTION:A semiconductor wafer 1 is firmly bonded on a bonding material layer 2 of an adhesive tape 8 and after cut grooves are formed, ultraviolet rays from ultraviolet emitting lamp 6 is projected to cure an ultraviolet curing type adhesive material layer 3 and in a state that the adhesive force of the layer 3 is reduced, the wafer 1 is separated from the layer 3. Whereupon, the layer 2 is left as it is bonded to the wafer 1. Accordingly, the wafer 1 and the layer 2 are arranged at a prescribed position on a die pad 7, the wafer 1 can be bonded to the pad 7 via the layer 2, a process for arranging a bonding material on the pad 7 can be omitted and at the same time, a reduction in the size of a device can be contrived.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は半導体ウェハのダイシング時に使用される粘
着テープに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an adhesive tape used for dicing semiconductor wafers.

〔従来の技術〕[Conventional technology]

第５図〜第８図は、従来の半導体ウェハのダイシングか
らダイボンドまでの工程を示す断面図である。図におい
て、１は半導体ウェハ、２は接合材、３は紫外線硬化型
粘着剤層、４はテープ基材で、所定の面に紫外線硬化型
粘着材層３が設けられている。５は半導体ウェハｌに回
転ブレード（図示せず）で形成された切り溝、６は紫外
線照射ランプ、７はダイスパッドである。上記３と４と
て粘着テープ８ａが構成される。FIGS. 5 to 8 are cross-sectional views showing conventional steps from dicing to die bonding of a semiconductor wafer. In the figure, 1 is a semiconductor wafer, 2 is a bonding material, 3 is an ultraviolet curable adhesive layer, and 4 is a tape base material, on which a UV curable adhesive layer 3 is provided on a predetermined surface. 5 is a cut groove formed in the semiconductor wafer l with a rotating blade (not shown), 6 is an ultraviolet irradiation lamp, and 7 is a die pad. The above 3 and 4 constitute the adhesive tape 8a.

次に動作について説明する。第５図に示すように、粘着
テープ８ａの紫外線硬化型粘着材層３に半導体ウェハ１
を固着し、回転ブレードで切り溝５を形成した後、紫外
線照射ランプ６を粘着テープ８ａに照射する。これによ
り、紫外線硬化型粘着材層３が硬化し粘着力が低下する
。Next, the operation will be explained. As shown in FIG. 5, a semiconductor wafer 1 is attached to the ultraviolet curing adhesive layer 3 of the adhesive tape 8a.
After fixing the adhesive tape 8a and forming a cut groove 5 with a rotating blade, the adhesive tape 8a is irradiated with an ultraviolet irradiation lamp 6. As a result, the ultraviolet curable adhesive layer 3 is cured and its adhesive strength is reduced.

この状態で、切り溝５に所定の工具を挿入して、第５図
に示すように半導体ウェハｌを紫外線硬化型粘着材層３
から剥離させる。In this state, a predetermined tool is inserted into the cut groove 5, and the semiconductor wafer l is placed on the ultraviolet curing adhesive layer 3 as shown in FIG.
Peel it off.

次に、あらかじめ別の工程で第７ｒＭに示すように、ダ
イスパッド７の所定の位置に接合材２を配置したものが
用意されているので、第８図に示すように半導体ウェハ
１を接合材２の上に配置し、半導体ウェハｌとダイスパ
ッド７とを接合する。Next, as shown in step 7rM in another process, the bonding material 2 is placed at a predetermined position on the die pad 7, so the semiconductor wafer 1 is placed in the bonding material as shown in FIG. 2, and the semiconductor wafer l and the die pad 7 are bonded together.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

従来の粘着テープは以上のように構成されているので、
ダイスパッド上に接合材を載せる機構が必要であり、装
置が大型となる問題点があった。Conventional adhesive tapes are constructed as described above.
A mechanism for placing the bonding material on the die pad is required, which poses a problem in that the device becomes large.

この発明は上記のような問題点を解消するためになされ
たもので、工程を減少するとともに装置の小型化を図る
ことかできる粘着テープを得ることを目的とする。This invention was made to solve the above-mentioned problems, and aims to provide an adhesive tape that can reduce the number of steps and downsize the device.

〔課題を解決するための手段〕[Means to solve the problem]

この発明に係わる粘着テープは、テープ基材に紫外線硬
化型粘着材層を設け、この紫外線硬化型粘着材層の上に
設けた接合材層に、半導体ウェハを貼り付けるようにし
たものである。In the adhesive tape according to the present invention, an ultraviolet curable adhesive layer is provided on a tape base material, and a semiconductor wafer is attached to a bonding material layer provided on the ultraviolet curable adhesive layer.

〔作用〕[Effect]

この発明における粘着テープは、紫外線の照射によって
紫外線硬化型粘着材層の粘着力か低下するので、接合材
は紫外線硬化型粘着材層から半導体ウェハと接合された
状態で容易に剥離される。In the adhesive tape of the present invention, the adhesive strength of the ultraviolet curable adhesive layer is reduced by irradiation with ultraviolet rays, so that the bonding material can be easily peeled off from the ultraviolet curable adhesive layer while bonded to the semiconductor wafer.

〔実施例〕 以下、この発明の一実施例を図について説明する。第１
図〜第４図はこの発明の一実施例に粘着テープを用いた
ダイシングからダイボンドまでの工程を示す断面図であ
る。図において、ｌは半導体ウェハ、２は接合材層、３
は紫外線硬化型粘着材層、４はテープ基材、６は紫外線
照射ラップ、７はダイスバットである。上記２〜７１て
紫外線硬化型粘着材か硬化したとき接合材との剥離か容
すな粘着テープ８か構成される。[Example] Hereinafter, an example of the present invention will be described with reference to the drawings. 1st
4 to 4 are cross-sectional views showing steps from dicing to die bonding using an adhesive tape in an embodiment of the present invention. In the figure, l is a semiconductor wafer, 2 is a bonding material layer, and 3 is a semiconductor wafer.
4 is an ultraviolet curable adhesive layer, 4 is a tape base material, 6 is an ultraviolet irradiation wrap, and 7 is a dice bat. The above-mentioned adhesive tapes 8 are constructed so that when the ultraviolet curable adhesive material is cured, it cannot be peeled off from the bonding material.

次に動作について説明する。第１図に示すように、粘着
テープ８の接合材層２の上に半導体ウェハ１を固着し、
回転プレートて切り溝５を形成した後、第２図に示すよ
うに紫外線照射ラップ６を粘着テープ８に照射する。こ
れにより、紫外線硬化型粘着材層３か硬化し粘着力か低
下する。Next, the operation will be explained. As shown in FIG. 1, the semiconductor wafer 1 is fixed on the bonding material layer 2 of the adhesive tape 8,
After forming the cut grooves 5 using the rotating plate, the adhesive tape 8 is irradiated with ultraviolet irradiation wrap 6 as shown in FIG. As a result, the ultraviolet curing adhesive layer 3 is cured and its adhesive strength is reduced.

この状態で、切り溝５に所定の工具を挿入して、第３図
に示すように半導体ウェハｌを紫外線硬化型粘着材層３
から剥離させる。この時、粘着力か低下した紫外線硬化
型粘着材層３は、半導体ウェハ１と接合された接合材層
２から容易に剥離されるので、半導体ウェハｌには接合
材２か接合されたままである。In this state, a predetermined tool is inserted into the cut groove 5, and the semiconductor wafer l is placed on the ultraviolet curing adhesive layer 3 as shown in FIG.
Peel it off. At this time, the ultraviolet curing adhesive layer 3 whose adhesive strength has decreased is easily peeled off from the bonding material layer 2 bonded to the semiconductor wafer 1, so that the bonding material 2 remains bonded to the semiconductor wafer l. .

次に、第４図に示すように半導体ウェハｌと接合材２と
をダイスボンド７上の所定の位置に配置し、半導体ウェ
ハ１とダイスパッド７とを接合材２て接合する。Next, as shown in FIG. 4, the semiconductor wafer 1 and the bonding material 2 are placed at predetermined positions on the die bond 7, and the semiconductor wafer 1 and the die pad 7 are bonded using the bonding material 2.

〔発明の効果〕〔Effect of the invention〕

以トのようにこの発明によれば、半導体ウェハをダイス
バッド接合する接合材を粘着テープに設け、半導体ウェ
ハを粘着テープから剥離したとき接合材か半導体ウェハ
に残るようにしたので、ダイスバッドに接合材を配置す
る工程を省略することができ、装置の小型化か可能とな
る効果かある。As described above, according to the present invention, the adhesive tape is provided with a bonding material for bonding the semiconductor wafer to the die pad, and when the semiconductor wafer is peeled off from the adhesive tape, the bonding material remains on the semiconductor wafer. The step of arranging the bonding material can be omitted, which has the effect of making it possible to downsize the device.

【図面の簡単な説明】[Brief explanation of drawings]

第１図〜第４図は、この発明の一実施例による粘着テー
プを用いたダイシングからダイボンドまでを示す断面図
、１！５図〜第８図は従来の粘着テープを用いたダイシ
ングからダイボンドまでの工程を示す断面図である。図
において、１は半導体ウェハ、２は接合材、３は紫外線
硬化型粘着材、４はテープ基材、５は切り溝、６は紫外
線照射ランプ、７はダイスパッド、８は粘着テープであ
る。 なお、図中、同一符号は同一、または相当部分を示す。Figures 1 to 4 are cross-sectional views showing the process from dicing to die bonding using an adhesive tape according to an embodiment of the present invention, and Figures 1!5 to 8 are sectional views showing the process from dicing to die bonding using a conventional adhesive tape. It is a sectional view showing the process. In the figure, 1 is a semiconductor wafer, 2 is a bonding material, 3 is an ultraviolet curing adhesive material, 4 is a tape base material, 5 is a cut groove, 6 is an ultraviolet irradiation lamp, 7 is a die pad, and 8 is an adhesive tape. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims (1)

【特許請求の範囲】[Claims] 回転ブレードで切り溝か形成される半導体ウェハを粘着
支持する粘着テープにおいて、粘着テープを基材と紫外
線硬化型粘着材層及び接合材層で構成したことを特徴と
する粘着テープ。An adhesive tape for adhesively supporting a semiconductor wafer having grooves formed with a rotating blade, characterized in that the adhesive tape is composed of a base material, an ultraviolet curable adhesive layer, and a bonding material layer.
JP2318911A 1990-11-22 1990-11-22 Adhesive tape Pending JPH04188847A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2318911A JPH04188847A (en) 1990-11-22 1990-11-22 Adhesive tape

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2318911A JPH04188847A (en) 1990-11-22 1990-11-22 Adhesive tape

Publications (1)

Publication Number Publication Date
JPH04188847A true JPH04188847A (en) 1992-07-07

Family

ID=18104351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2318911A Pending JPH04188847A (en) 1990-11-22 1990-11-22 Adhesive tape

Country Status (1)

Country Link
JP (1) JPH04188847A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7396742B2 (en) 2000-09-13 2008-07-08 Hamamatsu Photonics K.K. Laser processing method for cutting a wafer-like object by using a laser to form modified regions within the object
US7566635B2 (en) 2002-03-12 2009-07-28 Hamamatsu Photonics K.K. Substrate dividing method
US8058103B2 (en) 2003-09-10 2011-11-15 Hamamatsu Photonics K.K. Semiconductor substrate cutting method
US8865566B2 (en) 2002-12-03 2014-10-21 Hamamatsu Photonics K.K. Method of cutting semiconductor substrate
US8969752B2 (en) 2003-03-12 2015-03-03 Hamamatsu Photonics K.K. Laser processing method

Cited By (29)

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Publication number Priority date Publication date Assignee Title
US8946591B2 (en) 2000-09-13 2015-02-03 Hamamatsu Photonics K.K. Method of manufacturing a semiconductor device formed using a substrate cutting method
US7547613B2 (en) 2000-09-13 2009-06-16 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US10796959B2 (en) 2000-09-13 2020-10-06 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US7592238B2 (en) 2000-09-13 2009-09-22 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US7615721B2 (en) 2000-09-13 2009-11-10 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US7626137B2 (en) 2000-09-13 2009-12-01 Hamamatsu Photonics K.K. Laser cutting by forming a modified region within an object and generating fractures
US9837315B2 (en) 2000-09-13 2017-12-05 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US7396742B2 (en) 2000-09-13 2008-07-08 Hamamatsu Photonics K.K. Laser processing method for cutting a wafer-like object by using a laser to form modified regions within the object
US8969761B2 (en) 2000-09-13 2015-03-03 Hamamatsu Photonics K.K. Method of cutting a wafer-like object and semiconductor chip
US8927900B2 (en) 2000-09-13 2015-01-06 Hamamatsu Photonics K.K. Method of cutting a substrate, method of processing a wafer-like object, and method of manufacturing a semiconductor device
US8933369B2 (en) 2000-09-13 2015-01-13 Hamamatsu Photonics K.K. Method of cutting a substrate and method of manufacturing a semiconductor device
US8937264B2 (en) 2000-09-13 2015-01-20 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US8946592B2 (en) 2000-09-13 2015-02-03 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US8946589B2 (en) 2000-09-13 2015-02-03 Hamamatsu Photonics K.K. Method of cutting a substrate, method of cutting a wafer-like object, and method of manufacturing a semiconductor device
US9548246B2 (en) 2002-03-12 2017-01-17 Hamamatsu Photonics K.K. Substrate dividing method
US10622255B2 (en) 2002-03-12 2020-04-14 Hamamatsu Photonics K.K. Substrate dividing method
US11424162B2 (en) 2002-03-12 2022-08-23 Hamamatsu Photonics K.K. Substrate dividing method
US9142458B2 (en) 2002-03-12 2015-09-22 Hamamatsu Photonics K.K. Substrate dividing method
US9287177B2 (en) 2002-03-12 2016-03-15 Hamamatsu Photonics K.K. Substrate dividing method
US9543256B2 (en) 2002-03-12 2017-01-10 Hamamatsu Photonics K.K. Substrate dividing method
US9543207B2 (en) 2002-03-12 2017-01-10 Hamamatsu Photonics K.K. Substrate dividing method
US8889525B2 (en) 2002-03-12 2014-11-18 Hamamatsu Photonics K.K. Substrate dividing method
US9553023B2 (en) 2002-03-12 2017-01-24 Hamamatsu Photonics K.K. Substrate dividing method
US9711405B2 (en) 2002-03-12 2017-07-18 Hamamatsu Photonics K.K. Substrate dividing method
US7566635B2 (en) 2002-03-12 2009-07-28 Hamamatsu Photonics K.K. Substrate dividing method
US10068801B2 (en) 2002-03-12 2018-09-04 Hamamatsu Photonics K.K. Substrate dividing method
US8865566B2 (en) 2002-12-03 2014-10-21 Hamamatsu Photonics K.K. Method of cutting semiconductor substrate
US8969752B2 (en) 2003-03-12 2015-03-03 Hamamatsu Photonics K.K. Laser processing method
US8058103B2 (en) 2003-09-10 2011-11-15 Hamamatsu Photonics K.K. Semiconductor substrate cutting method

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