JPH04179113A - Gas piping method - Google Patents
Gas piping methodInfo
- Publication number
- JPH04179113A JPH04179113A JP30436090A JP30436090A JPH04179113A JP H04179113 A JPH04179113 A JP H04179113A JP 30436090 A JP30436090 A JP 30436090A JP 30436090 A JP30436090 A JP 30436090A JP H04179113 A JPH04179113 A JP H04179113A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- semiconductor manufacturing
- semiconductor
- valve box
- purge line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 11
- 239000007789 gas Substances 0.000 claims abstract description 51
- 239000004065 semiconductor Substances 0.000 claims abstract description 41
- 238000010926 purge Methods 0.000 claims abstract description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 claims abstract description 28
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 13
- 238000010586 diagram Methods 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
Landscapes
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体製造装置とシリンダーキャビネット間
のガス配管方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a gas piping method between semiconductor manufacturing equipment and a cylinder cabinet.
従来の技術
近年、半導体ガスボンベを収納したシリンダー＝＋＝ヤ
ビネットの安全対策として、その設置場所を屋内（クリ
ーンルーム）から屋外へ移す動きが出ている。その結果
、半導体製造装置とシリンダーキャビネットのガス配管
の長さが１．０ｍ以上にも及ぶものがある。Conventional Technology In recent years, as a safety measure for cylinders containing semiconductor gas cylinders, there has been a movement to move them from indoors (clean rooms) to outdoors. As a result, the length of the gas piping between the semiconductor manufacturing equipment and the cylinder cabinet may exceed 1.0 m.
以下従来のガス配管方法について説明する。The conventional gas piping method will be explained below.
第３図は従来のガス配管系を示し、１は半導体製造装置
、３はシリンダーキャビネット、４はクリーンルーム、
５はガス配管である。Figure 3 shows a conventional gas piping system, where 1 is semiconductor manufacturing equipment, 3 is a cylinder cabinet, 4 is a clean room,
5 is a gas pipe.
以Ｉ−のように構成されたガス配管系に於いて、シリン
ダーキャビネット３は屋外に設置され、クリーンルーム
内に設置された半導体製造装置１までの配管の長さは１
．０ｍ以」二ある。In the gas piping system configured as shown in I- below, the cylinder cabinet 3 is installed outdoors, and the length of the piping to the semiconductor manufacturing equipment 1 installed in the clean room is 1.
．． There are two "beyond 0m".
発明が解決しようとする課題
上記従来のガス配管系では、半導体製造装置１例のガス
系に対するパージは、半導体製造装置１とシリンダーキ
ャビネット３間のガス配管５内の半導体ガスを半導体製
造装置１側ヘパージした後、シリンダーキャビネット３
側からの窒素ガスによる加圧、パージ、真空引きの繰り
返しで行われるが、半導体装置１とシリンダーキャヒネ
ッＩ・３の間のガス配管５の長さが］、 Ｏｍ以上も長
くなると、窒素ガスでのパージ効率が低下し、そのため
長時間のパージが必要になるという課題があった。Problems to be Solved by the Invention In the conventional gas piping system described above, purging of the gas system of one example of semiconductor manufacturing equipment is carried out by purging the semiconductor gas in the gas piping 5 between the semiconductor manufacturing equipment 1 and the cylinder cabinet 3 to the semiconductor manufacturing equipment 1 side. After hepurge, cylinder cabinet 3
This is done by repeatedly pressurizing, purging, and vacuuming with nitrogen gas from the side, but if the length of the gas pipe 5 between the semiconductor device 1 and the cylinder cabinet I/3 becomes longer than 0m, the nitrogen gas There was a problem in that the purge efficiency was reduced, and therefore a long time purge was required.
課題を解決するだめの手段
この課題を解決するために本発明のガス配管方法は、窒
素パージライン、真空パージライン、半導体ガス供給ラ
インで構成されたガス系を有するバルブボックスを半導
体製造装置の直近に設置するものである。Means for Solving the Problem In order to solve this problem, the gas piping method of the present invention installs a valve box having a gas system consisting of a nitrogen purge line, a vacuum purge line, and a semiconductor gas supply line in the vicinity of semiconductor manufacturing equipment. It will be installed in
作用
このように構成されたガス系では、バルブボックスと半
導体製造装置の間で半導体ガスのパージ、窒素による加
圧、パージ、真空引きが可能になるため、半導体製造装
置側のガス系パージを短時間に、効率よく行うことがで
きる。Effect With a gas system configured in this way, it is possible to purge the semiconductor gas, pressurize with nitrogen, purge, and vacuum between the valve box and the semiconductor manufacturing equipment, so the gas system purge on the semiconductor manufacturing equipment side can be shortened. Can be done efficiently and on time.
実施例
以下、本発明の一実施例について、図面を参照しながら
説明する。EXAMPLE Hereinafter, an example of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例におけるガス配管方法の全体
構成を示すものであり、■は半導体製造装置、２はバル
ブボックス、３はシリンダーキャビネット、４は室内（
クリーンルーム）、５はガス配管である。FIG. 1 shows the overall configuration of a gas piping method according to an embodiment of the present invention, where ■ is a semiconductor manufacturing equipment, 2 is a valve box, 3 is a cylinder cabinet, and 4 is an indoor (
(clean room), 5 is gas piping.
第１図からも明らかなように、本実施例においては、半
導体製造装置１とシリンダーキャビネット３がバルブボ
ックス２とガス配管５とで供給され、かつバルブボック
ス２が、室内４の半導体製造装置１の真近に設置されて
いる。As is clear from FIG. 1, in this embodiment, the semiconductor manufacturing equipment 1 and the cylinder cabinet 3 are supplied by the valve box 2 and the gas pipe 5, and the valve box 2 is connected to the semiconductor manufacturing equipment 1 in the room 4. is located close to.
第２図はバルブボックス２内の具体構成を示すものであ
り、６，７は半導体ガス供給ライン、８は窒素パージラ
イン、９は真空パージライン、１０゜１０ａ〜Ｌｏｇは
ダイアフラムバルブ、１１は逆止弁、１２は圧力計であ
る。これらのガス系部品、配管は点線で囲まれたバルブ
ボックス２内に収納されている。Figure 2 shows the specific configuration inside the valve box 2, with 6 and 7 indicating semiconductor gas supply lines, 8 indicating nitrogen purge line, 9 indicating vacuum purge line, 10°10a to Log indicating diaphragm valve, and 11 indicating reverse. A stop valve, 12 is a pressure gauge. These gas system parts and piping are housed in a valve box 2 surrounded by dotted lines.
以上のように構成されたガス配管を使用して半導体製造
装置のガス系をパージする方法について説明する。A method of purging the gas system of a semiconductor manufacturing apparatus using the gas piping configured as described above will be described.
半導体ガス供給ライン６．７は、生ガスが充填されてい
る。すなわち、バルブＩＯ，１，Ｏａが開、その他のバ
ルブ１０ｂ〜１．０ ｇはすべて閉である。ここで、ま
ずバルブ１０．１０ａを閉にした後、生ガスを半導体製
造装置１側へ抜（。４その後窒素パージライン８のバル
ブ１０ｂ、１０ｃ。The semiconductor gas supply line 6.7 is filled with raw gas. That is, valves IO, 1, and Oa are open, and all other valves 10b to 1.0g are closed. Here, first, after closing the valve 10.10a, the raw gas is discharged to the semiconductor manufacturing equipment 1 side (.4) Then, the valves 10b and 10c of the nitrogen purge line 8 are closed.
１’Ｏｄを開き、窒素による加圧、パージを繰り返す。Open 1'Od and repeat pressurizing and purging with nitrogen.
次に半導体製造装置１が減圧型であれば、窒素による加
圧、真空パージを行う。又常圧型であれば半導体製造袋
Ｎｌ側のガス系出口を閉にした後、ガス系全体を窒素で
加圧し、その後真空パージライン９のバルブ１０ｆ、１
０ｇを開にし、真空パージを行う。以上の動作を数回繰
り返す。なお真空パージをバルブボックス２を使用して
行う時は、バルブ１０ｅを少し開け、窒素を流しながら
真空引きを行うことで、安全が確保される。Next, if the semiconductor manufacturing apparatus 1 is a reduced pressure type, pressurization with nitrogen and vacuum purge are performed. If it is a normal pressure type, after closing the gas system outlet on the semiconductor manufacturing bag Nl side, the entire gas system is pressurized with nitrogen, and then the valves 10f and 1 of the vacuum purge line 9 are closed.
Open 0g and perform vacuum purge. Repeat the above action several times. Note that when vacuum purging is performed using the valve box 2, safety is ensured by opening the valve 10e slightly and performing evacuation while flowing nitrogen.
以上のように、半導体製造装置１の真近に設置されたバ
ルブボックス２内のガス系を使用して半導体製造装置１
側のガス系をパージすれば、短時間に効率よく、又安全
にパージを行うことが可能となる。As described above, the semiconductor manufacturing equipment 1
By purging the gas system on the side, it becomes possible to purge efficiently and safely in a short time.
発明の効果
本発明は半導体製造装置とシリンダーキャビネット間を
、ガス配管と１、窒素パージライン、真−５＝
空パージライン、半導体ガス供給ラインで構成されたバ
ルブボックスとで結合するとともに、バルブボックスを
半導体製造装置の真近に設置することにより、屋外にシ
リンダーキャビネットが設置された場合でも短時間に、
効率よく、安全に半導体製造装置側のガス系のパージを
可能にするガス配管方法を実現子るものである。Effects of the Invention The present invention connects semiconductor manufacturing equipment and a cylinder cabinet with a gas pipe and a valve box composed of a nitrogen purge line, an empty purge line, and a semiconductor gas supply line. By installing the cylinder cabinet in close proximity to semiconductor manufacturing equipment, even if the cylinder cabinet is installed outdoors, it can be installed in a short time.
The present invention provides a gas piping method that enables efficient and safe purging of the gas system on the semiconductor manufacturing equipment side.
第１図は本廠明の一実施例におけるガス配管方法を示す
ブロック図、第２図は第１図におけるバルブボックス内
の具体構成を示す図、第３図は従来のガス配管方法を示
すブロック図である。
１・・・・・・半導体製造装置、２・・・・・・バルブ
ボックス、３・・・・・・シリンダーキャビネット、４
・・・・・・室内（クリーンルーム）、５・・・・・・
ガス配管、６，７・・・・・・半導体ガス供給ライン、
８・・・・・・窒素パージライン、９・・・・・・真空
パージライン、１０．１０ａ〜Ｌｏｇ・・・・・・ダイ
アフラムバルブ、１１・・・・・・逆止弁、１２・・・
・・・圧力計。Figure 1 is a block diagram showing the gas piping method in one embodiment of this company, Figure 2 is a diagram showing the specific configuration inside the valve box in Figure 1, and Figure 3 is a block diagram showing the conventional gas piping method. It is a diagram. 1... Semiconductor manufacturing equipment, 2... Valve box, 3... Cylinder cabinet, 4
...Indoors (clean room), 5...
Gas piping, 6, 7... semiconductor gas supply line,
8...Nitrogen purge line, 9...Vacuum purge line, 10.10a~Log...Diaphragm valve, 11...Check valve, 12...・
...Pressure gauge.
Claims (1)
配管と、窒素パージライン、真空パージライン、半導体
ガス供給ラインで構成されたガス系を有するバルブボッ
クスとを介して結合するとともに、上記バルブボックス
を上記半導体製造装置の直近に設置することを特徴とす
るガス配管方法。The semiconductor manufacturing equipment and the cylinder cabinet are connected via gas piping and a valve box having a gas system consisting of a nitrogen purge line, a vacuum purge line, and a semiconductor gas supply line, and the valve box is connected to the semiconductor manufacturing equipment. A gas piping method characterized by installing the gas piping in close proximity to the equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2304360A JP2563672B2 (en) | 1990-11-08 | 1990-11-08 | Gas piping method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2304360A JP2563672B2 (en) | 1990-11-08 | 1990-11-08 | Gas piping method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04179113A true JPH04179113A (en) | 1992-06-25 |
| JP2563672B2 JP2563672B2 (en) | 1996-12-11 |
Family
ID=17932083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2304360A Expired - Fee Related JP2563672B2 (en) | 1990-11-08 | 1990-11-08 | Gas piping method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2563672B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000195806A (en) * | 1998-12-25 | 2000-07-14 | Nippon Sanso Corp | Bulk supply device for semiconductor process gas and gas supply method using the same |
| WO2001013411A1 (en) * | 1999-08-16 | 2001-02-22 | Tokyo Electron Limited | Method for carry in and installation of semiconductor manufacturing apparatus and substitute for apparatus |
| JP2010514927A (en) * | 2006-12-26 | 2010-05-06 | コーウィン ディーエスティー カンパニー リミテッド | Raw material gas supply apparatus and residual gas treatment treatment and method for thin film deposition apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62143427A (en) * | 1985-12-18 | 1987-06-26 | Hitachi Ltd | Processing gas supply device |
-
1990
- 1990-11-08 JP JP2304360A patent/JP2563672B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62143427A (en) * | 1985-12-18 | 1987-06-26 | Hitachi Ltd | Processing gas supply device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000195806A (en) * | 1998-12-25 | 2000-07-14 | Nippon Sanso Corp | Bulk supply device for semiconductor process gas and gas supply method using the same |
| WO2001013411A1 (en) * | 1999-08-16 | 2001-02-22 | Tokyo Electron Limited | Method for carry in and installation of semiconductor manufacturing apparatus and substitute for apparatus |
| US6530136B1 (en) | 1999-08-16 | 2003-03-11 | Tokyo Electron Limited | Method for transporting and installing a semiconductor manufacturing apparatus |
| JP2010514927A (en) * | 2006-12-26 | 2010-05-06 | コーウィン ディーエスティー カンパニー リミテッド | Raw material gas supply apparatus and residual gas treatment treatment and method for thin film deposition apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2563672B2 (en) | 1996-12-11 |
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