JPH04165641A - Inspecting device for external appearance of wafer - Google Patents
Inspecting device for external appearance of waferInfo
- Publication number
- JPH04165641A JPH04165641A JP29284390A JP29284390A JPH04165641A JP H04165641 A JPH04165641 A JP H04165641A JP 29284390 A JP29284390 A JP 29284390A JP 29284390 A JP29284390 A JP 29284390A JP H04165641 A JPH04165641 A JP H04165641A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- light
- region
- ultraviolet
- image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007689 inspection Methods 0.000 claims abstract description 30
- 238000011179 visual inspection Methods 0.000 claims description 20
- 238000003384 imaging method Methods 0.000 claims description 9
- 238000010521 absorption reaction Methods 0.000 abstract description 8
- 239000000126 substance Substances 0.000 abstract description 4
- 229910052736 halogen Inorganic materials 0.000 abstract description 2
- 150000002367 halogens Chemical class 0.000 abstract description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052753 mercury Inorganic materials 0.000 abstract description 2
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 230000005856 abnormality Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ウェーハに異物が付着しているが否かを検査
するウェーハ外観検査装置に関し、特にパターンマツチ
ング方式を採用したウェーハ外観検査装置に関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a wafer appearance inspection device for inspecting whether or not foreign matter is attached to a wafer, and in particular, a wafer appearance inspection device that uses a pattern matching method. Regarding.
第４図は従来のウェーハ外観検査装置の一例における構
成を示す図である。従来、この種のウェーハ外観検査装
置は、例えば、第４図に示すように、ウェーハ４を載置
するステージ６と、ウェーハ４の一領域をハーフミラ−
２及び対物レンズ３を介して光を照射する検査光源１と
、ウェーハ４より反射する光を対物レンズ３及びハーフ
ミラ−２を介して撮像する撮像カメラ５と、撮像カメラ
の撮像信号を処理して画像データを作成し、このデータ
と事前の画像データと比較するイメージプロセッサ７及
びＣＰＵ８とを有していた。FIG. 4 is a diagram showing the configuration of an example of a conventional wafer visual inspection apparatus. Conventionally, this type of wafer appearance inspection apparatus has, for example, a stage 6 on which a wafer 4 is placed, and a half mirror for a region of the wafer 4, as shown in FIG.
2 and an inspection light source 1 that emits light via an objective lens 3; an imaging camera 5 that captures an image of light reflected from a wafer 4 via an objective lens 3 and a half mirror 2; It had an image processor 7 and a CPU 8 for creating image data and comparing this data with previous image data.
次に、このウェーハ外観検査装置の動作について説明す
る。まず、ウェーハ４を矢印の方向に移動し、光照射領
域をウェーハ４面の一領域に位置決めする０次に、この
領域を撮像カメラ５で撮像し、第１の画像を取り込む０
次に、パターンマツチングすべき領域を光照射領域に位
置決めし、第の画像を取り込む０次に、イメージプロセ
ッサ７及びＣＰＵ８により、第１の画像と第２の画像と
を比較し、異常があるか否かを検査する。Next, the operation of this wafer visual inspection apparatus will be explained. First, the wafer 4 is moved in the direction of the arrow, and the light irradiation area is positioned in one area of the wafer 4. Next, this area is imaged with the imaging camera 5, and a first image is captured.
Next, the area to be pattern matched is positioned in the light irradiation area, and a second image is captured.Next, the image processor 7 and CPU 8 compare the first image and the second image, and detect abnormalities. Inspect whether or not.
しかし、この時点では、二つの画像に相違があっても、
第１の画像に異常があるのか、第２の画像に異常がある
のか判断出来ないため、外観検査終了後、これら画像を
デイスプレィ上に映し出し、二つの画像を比較判定して
いた。あるいは、この二つの領域を光学顕微鏡等を用い
て目視で比較していた。また、この観察に間しては、光
源として可視光線領域を含む白色光線が使用されていた
。However, at this point, even if there are differences between the two images,
Since it is not possible to determine whether there is an abnormality in the first image or the second image, these images are displayed on a display after the visual inspection is completed, and the two images are compared and judged. Alternatively, these two regions were visually compared using an optical microscope or the like. Furthermore, during this observation, white light including visible light was used as a light source.
この従来のパターンマツチング方式のウェーハ外観検査
装置は、検査光源に白色光源を用いた場合、有機物など
で可視光域で吸収がない透明状の異物等が付着しても、
人間の目視では確認出来ない為、外観異常として検出す
る事は困難である。This conventional pattern matching type wafer visual inspection apparatus uses a white light source as the inspection light source, and even if transparent foreign substances such as organic substances that do not absorb in the visible light range adhere,
Since it cannot be confirmed visually by humans, it is difficult to detect it as an abnormality in appearance.
そして、この異物は、ＩＣ４ｊ造歩留を著しく低下する
一原因となる。This foreign material is one of the causes of a significant decrease in the IC4j manufacturing yield.
また、今後ウェーハのパターンの集積度が上昇していく
場合、従来以上の改造性が望まれる。Furthermore, if the degree of integration of wafer patterns increases in the future, greater modifiability than before is desired.
本発明の目的は、かかる問題を解消するウェーハ外観検
査装置を提供することである。An object of the present invention is to provide a wafer visual inspection apparatus that solves this problem.
１ 本発明の第］のウェーハ外観検査装置は、ウェーハ
を載置するステージと、ウェーハの一領域を撮像する手
段とを有するウェーハ外観検査装置において、前記ウェ
ーハの一領域を照射する紫外光源を含む複数の検査光源
を有している。1 The wafer visual inspection apparatus according to the present invention is a wafer visual inspection apparatus that has a stage on which a wafer is placed and a means for imaging a region of the wafer, and includes an ultraviolet light source that irradiates the one region of the wafer. It has multiple inspection light sources.
２、本発明の第２ウエーハ外観検査装置は、紫外光源を
含む複数の検査光源と、前記ウェーハの一領域を撮像す
るカラー固体撮像素子を有している。2. The second wafer visual inspection apparatus of the present invention includes a plurality of inspection light sources including an ultraviolet light source and a color solid-state image pickup device that images a region of the wafer.
次に、本発明について図面を参照して説明する。第１図
はウェーハ外観検査装置の一実施例における構成を示す
図である。このウェーハ外観検査装置は、同図に示すよ
うに、検査光源として、ハロゲンランプを用いた可視光
源１３と、高圧水銀等を用いた紫外光源９の２種の光源
を設けなことでる。また、これらから発せられた検査光
をハーフミラ−２ａ、２ｂ及び対物レンズ３を介してウ
ェーハに照射し、その反射光を画像として撮像カメラ５
て取り込むことである。さらに、この検査光源の選択に
はシャッター１０ａ及び１０ｂを用いて行った。この２
つのシャッターをあければ紫外域から可視光域までの検
査光となる。Next, the present invention will be explained with reference to the drawings. FIG. 1 is a diagram showing the configuration of an embodiment of a wafer visual inspection apparatus. As shown in the figure, this wafer visual inspection apparatus is equipped with two types of light sources as inspection light sources: a visible light source 13 using a halogen lamp and an ultraviolet light source 9 using high pressure mercury or the like. In addition, the inspection light emitted from these is irradiated onto the wafer via the half mirrors 2a and 2b and the objective lens 3, and the reflected light is used as an image by an imaging camera 5.
It is important to incorporate the Furthermore, shutters 10a and 10b were used to select the inspection light source. This 2
Opening two shutters provides inspection light ranging from the ultraviolet to the visible light range.
そして、この取り込んだ第１の画像と第２の画像をイメ
ージプロセッサ７、ｃｐｕｓにより比較を行った。ここ
で、この装置に使用した撮像カメラ５は、２００ｎｍか
ら可視光域まで分光感度を有する撮像管の一種であるサ
チコン、ニュービコン、カルニコンを用いた。第２図＜
ａ、 ）〜（ｅ）は、第１図のウェーハ外観検査装置
で画像を取り込んだ場合に得られた画像を示す図である
。Then, the captured first image and second image were compared using the image processor 7, CPU. Here, as the imaging camera 5 used in this apparatus, a Sachicon, Newbicon, or Carnicon, which is a type of imaging tube having spectral sensitivity from 200 nm to the visible light range, was used. Figure 2<
1A, ) to 2E are diagrams showing images obtained when images are taken in by the wafer visual inspection apparatus of FIG. 1. FIG.
第２図（ａ）は、紫外光源と可視光源の両方を合わせて
検査光とした場合に得られた画像である。この場合、紫
外域から可視域まで吸収があるパターンＡと紫外域まで
しか吸収がないパターンＢの両方のパターンの検圧がで
きる。FIG. 2(a) is an image obtained when both an ultraviolet light source and a visible light source are used as inspection light. In this case, pressure can be detected in both pattern A, which has absorption from the ultraviolet region to the visible region, and pattern B, which has absorption only in the ultraviolet region.
第２図（ｂ）は可視光源を検査光として検査した場合に
得られた画像である。取り込んだ画像は、検査光の波長
の吸収率に起因しコントラストが得られるため、紫外域
はでにしか吸収を持たないパターンＢは検出されない。FIG. 2(b) is an image obtained when inspecting using a visible light source as inspection light. Since contrast is obtained in the captured image due to the absorption rate of the wavelength of the inspection light, pattern B, which has absorption only in the ultraviolet region, is not detected.
第２図（ｃ）は紫外光源を検査光として検査した場合に
得られた画像である。パターンが紫外光の吸収を持って
いれば検圧される為、紫外域までにしか吸収を持たない
パターンＢも検出される。FIG. 2(c) is an image obtained when an ultraviolet light source was used as the inspection light. If a pattern has absorption of ultraviolet light, the pressure is detected, so pattern B, which has absorption only up to the ultraviolet region, is also detected.
つまり、ウェーハ状に可視光に透明な異物が付着した場
合でも、紫外域までにしか吸収を持たないパターンＢと
同様に検出が可能である。実際の外観検査を行う場合は
、これらの検査光の選択を、検査するウェーハの各波長
のコントラストに合わせて選択することが望ましい。In other words, even if foreign matter that is transparent to visible light adheres to the wafer, it can be detected in the same way as in pattern B, which absorbs only up to the ultraviolet region. When performing an actual appearance inspection, it is desirable to select these inspection lights in accordance with the contrast of each wavelength of the wafer to be inspected.
そして、この実施例で、紫外光源を用いて検査を行った
場合、検出されたパターンに対して可視光域に透明状の
パターンかどうが判定する必要がある。In this embodiment, when an ultraviolet light source is used for inspection, it is necessary to determine whether or not the detected pattern is transparent in the visible light range.
第３図は本発明のウェーハ外観検査装置の他の実施例に
おける構成を示す図である。このウェーハ外観検査装置
は、同図に示すように、前述の実施例のウェーハ外観検
査装置に、カラー固体撮像素子１１を設け、前述の撮像
カメラ５と切り換え可能としたことである。これにより
、ウェーハ上の同一個所で、紫外光源で得られた画像と
カラー固体撮像素子で得られた画像をリアルタイムで比
較することが可能である。FIG. 3 is a diagram showing the configuration of another embodiment of the wafer visual inspection apparatus of the present invention. As shown in the figure, this wafer visual inspection apparatus is the same as the wafer visual inspection apparatus of the above-mentioned embodiment, but is equipped with a color solid-state image pickup device 11, which can be switched with the above-described image pickup camera 5. This makes it possible to compare in real time an image obtained with an ultraviolet light source and an image obtained with a color solid-state image sensor at the same location on a wafer.
以上説明したように本発明のウェーハ外観検査装置は、
紫外光源を含む複数の検査光源を設けることによって、
ウェーハ外観検査を行うため、可視光を吸収しない透明
状の異物でも検出が可能である。さらに、これら検査光
源は、短波長の光をもっているなめ、よりパターン解像
性が向上する効果を有する。また、カラー固体撮像素子
を設置し、撮像カメラと切り換え可能としなので、ウェ
ーハ上の同一箇所で紫外光源で得られた画像とカラー固
体撮像素子で得られた画像をリアルタイムで比較するこ
とが可能であるという効果を有する。As explained above, the wafer visual inspection apparatus of the present invention has the following features:
By providing multiple inspection light sources, including an ultraviolet light source,
Since wafer appearance inspection is performed, it is possible to detect even transparent foreign substances that do not absorb visible light. Furthermore, since these inspection light sources have short wavelength light, they have the effect of further improving pattern resolution. In addition, since a color solid-state image sensor is installed and can be switched with an imaging camera, it is possible to compare in real time images obtained with an ultraviolet light source and images obtained with a color solid-state image sensor at the same location on the wafer. It has the effect of being.
第１図は本発明のウェーハ外観検査装置の一実施例にお
ける構成を示す図、第２図（ａ）〜（Ｃ）は第１図のウ
ェーハ外観検査装置で画像を取り込んだ場合に得られた
画像を示す図、第３図は本発明のウェーハ外観検査装置
の他の実施例における構成を示す図、第４図は従来のウ
ェーハ外観検査装置の一例における構成を示す図である
。
１・・・検査光源、２．２ａ、２ｂ・・・ハーフミラ−
１３・・・対物レンズ、４・・・ウェーハ、５・・・撮
像カメラ、６・・・ステージ、７・・・イメージプロセ
ッサ、８・・・ＣＰＵ、９・・・紫外光源、１０ａ、１
０ｂ・・・シャッター、１１・・・カラー固体撮像素子
、１２・・・デイスプレィ、１３・・・可視光源。Figure 1 is a diagram showing the configuration of an embodiment of the wafer visual inspection apparatus of the present invention, and Figures 2 (a) to (C) are images obtained when the wafer visual inspection apparatus of Figure 1 is used to capture images. FIG. 3 is a diagram showing the configuration of another embodiment of the wafer visual inspection apparatus of the present invention, and FIG. 4 is a diagram showing the configuration of an example of the conventional wafer visual inspection apparatus. 1... Inspection light source, 2.2a, 2b... Half mirror
13... Objective lens, 4... Wafer, 5... Imaging camera, 6... Stage, 7... Image processor, 8... CPU, 9... Ultraviolet light source, 10a, 1
0b...Shutter, 11...Color solid-state image sensor, 12...Display, 13...Visible light source.
Claims (1)
撮像する手段とを有するウェーハ外観検査装置において
、前記ウェーハの一領域を照射する紫外光源を含む複数
の検査光源を有することを特徴とするウェーハ外観検査
装置。 ２、前記ウェーハの一領域を撮像するカラー固体撮像素
子を有していることを特徴とする請求項１記載のウェー
ハ外観検査装置。[Scope of Claims] 1. A wafer visual inspection apparatus having a stage on which a wafer is placed and means for imaging a region of the wafer, which includes a plurality of inspection light sources including an ultraviolet light source that irradiates the region of the wafer. A wafer appearance inspection device characterized by: 2. The wafer appearance inspection apparatus according to claim 1, further comprising a color solid-state image sensor for capturing an image of one area of the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29284390A JPH04165641A (en) | 1990-10-30 | 1990-10-30 | Inspecting device for external appearance of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29284390A JPH04165641A (en) | 1990-10-30 | 1990-10-30 | Inspecting device for external appearance of wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04165641A true JPH04165641A (en) | 1992-06-11 |
Family
ID=17787085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29284390A Pending JPH04165641A (en) | 1990-10-30 | 1990-10-30 | Inspecting device for external appearance of wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04165641A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000338049A (en) * | 1999-06-01 | 2000-12-08 | Nikon Corp | Apparatus and method for inspecting flaw |
| JP2002006226A (en) * | 2000-06-19 | 2002-01-09 | Sony Corp | Inspecting device |
| JP2002214159A (en) * | 2001-01-12 | 2002-07-31 | Sony Corp | Substrate inspecting device, substrate inspecting method, and manufacturing method for liquid crystal display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60167327A (en) * | 1984-02-10 | 1985-08-30 | Hitachi Ltd | Manufacturing method of semiconductor device |
| JPH01176932A (en) * | 1988-01-05 | 1989-07-13 | Nikon Corp | Fine foreign matter inspection device |
| JPH02227642A (en) * | 1989-02-28 | 1990-09-10 | Sony Corp | Surface inspecton device |
-
1990
- 1990-10-30 JP JP29284390A patent/JPH04165641A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60167327A (en) * | 1984-02-10 | 1985-08-30 | Hitachi Ltd | Manufacturing method of semiconductor device |
| JPH01176932A (en) * | 1988-01-05 | 1989-07-13 | Nikon Corp | Fine foreign matter inspection device |
| JPH02227642A (en) * | 1989-02-28 | 1990-09-10 | Sony Corp | Surface inspecton device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000338049A (en) * | 1999-06-01 | 2000-12-08 | Nikon Corp | Apparatus and method for inspecting flaw |
| JP2002006226A (en) * | 2000-06-19 | 2002-01-09 | Sony Corp | Inspecting device |
| JP2002214159A (en) * | 2001-01-12 | 2002-07-31 | Sony Corp | Substrate inspecting device, substrate inspecting method, and manufacturing method for liquid crystal display device |
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