JPH04164841A - Anodic connection method - Google Patents
Anodic connection methodInfo
- Publication number
- JPH04164841A JPH04164841A JP29047790A JP29047790A JPH04164841A JP H04164841 A JPH04164841 A JP H04164841A JP 29047790 A JP29047790 A JP 29047790A JP 29047790 A JP29047790 A JP 29047790A JP H04164841 A JPH04164841 A JP H04164841A
- Authority
- JP
- Japan
- Prior art keywords
- pyrex glass
- metallized layer
- bonding
- glass
- silicon wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 16
- 239000011521 glass Substances 0.000 claims abstract description 41
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000005297 pyrex Substances 0.000 claims abstract description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 235000012431 wafers Nutrition 0.000 claims description 16
- 230000004438 eyesight Effects 0.000 abstract 1
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 230000005856 abnormality Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000013070 direct material Substances 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009331 sowing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Joining Of Glass To Other Materials (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、パイレックスガラスとシリコンウェハを、熱
と電気エネルギーでイオン拡散を生じさせ、接合境界部
にＳｉｎ、を形成させることで接合させる陽極接合に関
するものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention provides an anode for bonding Pyrex glass and a silicon wafer by causing ion diffusion using heat and electrical energy and forming Sin at the bonding boundary. It concerns joining.
現在、陽極接合技術を使うのは、半導体分野においては
主に、圧力センサーを製作する工程においてである。従
来の技術の説明の舵に圧力センサーの構造、動作のしく
みについて簡単に述べる。Currently, anodic bonding technology is mainly used in the semiconductor field in the process of manufacturing pressure sensors. The structure and operation mechanism of the pressure sensor on the rudder will be briefly described in the explanation of the conventional technology.
第７図は、圧力センサーの断面図である。図において、
（２）はパイレックスガラス、（４）はセンサーチップ
、（５）はダイヤフラム、（７Ｈｔキヤツプ、（８）は
ベース、（９）は金線、αｑはリードフレーム、ＣＬυ
は接合材であって、センサーチップ（４）とパイレック
スガラス（２）は密封されており、ダイヤフラム（５）
内は真空である。FIG. 7 is a cross-sectional view of the pressure sensor. In the figure,
(2) is Pyrex glass, (4) is sensor chip, (5) is diaphragm, (7Ht cap, (8) is base, (9) is gold wire, αq is lead frame, CLυ
is a bonding material, the sensor chip (4) and the Pyrex glass (2) are sealed, and the diaphragm (5)
There is a vacuum inside.
外部の圧力とダイヤフラム（５）内の圧力差を、センサ
ーチップ（４）が検知して、その圧力信号は金線（９八
リードフレームαＱを伝わる。The sensor chip (4) detects the difference between the external pressure and the pressure inside the diaphragm (5), and the pressure signal is transmitted through the gold wire (98 lead frame αQ).
圧力センサーの働きは上記のような仕組みであるので、
パイレックスガラス（２）とセンサーチップ（４）の作
成されたシリコンウェハ（３）は、１チツプごとにダイ
ヤスラム（５）を設け、密着させる必要がある。The pressure sensor works as described above.
The Pyrex glass (2) and the silicon wafer (3) on which the sensor chips (4) are made must be brought into close contact by providing a diamond slam (5) for each chip.
パイレックスガラス（２）とシリコンウェハ（３）を、
気密性を保持して接合させる方法として、以下に示す陽
極接合が、従来用いられていた。Pyrex glass (2) and silicon wafer (3),
As a method for bonding while maintaining airtightness, anodic bonding described below has been conventionally used.
第５図は従来の接合方法におけるパイレックスガラスの
裏面を示す平面図であり、第６図は第５図のｖｔ−ｖｔ
力方向見た断面図である。図において、（］）ハメタラ
イズ層、（２）は裏面にメタライズ層（１）を設けたパ
イレックスガラス、（力はパイレックスガラス（２）を
接合させるシリコンウェハである。第６図かられかるよ
うに、メタライズ層（１）は３層構造で、パイレックス
ガラス（２ン上にスパッタ法で堆積せれており、その下
に１まダイヤフラム（５）を設けたセンサーチップ（４
）の作成されたシリコンウェハ（３）が重ねらｎている
。FIG. 5 is a plan view showing the back side of Pyrex glass in the conventional bonding method, and FIG. 6 is a vt-vt diagram of FIG.
It is a sectional view seen in the force direction. In the figure, (]) is the metallized layer, (2) is the Pyrex glass with the metallized layer (1) on the back side, and (the force is the silicon wafer to which the Pyrex glass (2) is bonded. As can be seen from Figure 6) The metallized layer (1) has a three-layer structure, and is deposited by sputtering on Pyrex glass (2 layers), under which the sensor chip (4 layers) is provided with a diaphragm (5).
) prepared silicon wafers (3) are stacked one on top of the other.
そうして、シリコンウェハ（３）とパイレックスガラス
（２）を重ねてそれらをシリコンウェハ（３）を下側に
真空チャンバー内に収納し、真空チャンバー内を真空ｌ
こした後４００″Ｃ前後に加熱し、シリコンウェハ（３
）を正、パイレックスガラス（２）上のメタライズ層（
１）を負として５０ｏｖｆｍ後の直流電圧を印加する。Then, stack the silicon wafer (3) and the Pyrex glass (2) and store them in a vacuum chamber with the silicon wafer (3) on the bottom, and keep the inside of the vacuum chamber under vacuum.
After straining, heat to around 400"C and place on a silicon wafer (3
) is positive, the metallized layer (
1) is set as negative, and a DC voltage after 50 ovfm is applied.
この際にパイレックスガラス（２）のアルカリ成分でＮ
ａＯが分極されてパイレックスガラス（２ンの接合境界
面から酸素イオンが放出され、陽極側であるシリコンウ
ェハ（３）側へ移動する。またシリコンウェハ（３）の
５１もイオン化され５１４０となり、陰極側であるパイ
レックスガラス（２）側へ移動する。こｎらのイオン拡
散によって接合境界部にＳｉ Ｏｌの接合層か形成さＯ
ｌこの層によってシリコンウェハ（３）とパイレックス
ガラス（２）とが接合さｎる。At this time, use the alkaline component of Pyrex glass (2) to
aO is polarized and oxygen ions are released from the junction interface of the Pyrex glass (2) and move to the silicon wafer (3) side, which is the anode side. 51 of the silicon wafer (3) is also ionized to 5140, and the cathode A bonding layer of SiOl is formed at the bonding boundary by the diffusion of these ions.
This layer bonds the silicon wafer (3) and the Pyrex glass (2).
なお、メタライズ層（１月、ｔ３層構造になっており、
パイレックスガラス（２〕側からＴ１層、Ｎ１層、Ａｕ
層となっている。In addition, the metallized layer (January, has a t3 layer structure,
From the Pyrex glass (2) side: T1 layer, N1 layer, Au
It is layered.
従来の陽極接合方法は、パイレックスガラス裏面全面に
メタライズ層が形成さｎているので接合進行状況を観察
できない。In the conventional anodic bonding method, a metallized layer is formed on the entire back surface of the Pyrex glass, so the progress of bonding cannot be observed.
したがって、接合完了は、接合時に流れる接合電流のプ
ロファイルあるいは電圧印加時間で管理する方法などが
あるが、いずＯも接合進行状況を間接的にチエツクする
方法にすぎなかった。Therefore, there are methods for managing the completion of bonding using the profile of the bonding current flowing during bonding or the voltage application time, but all of these methods are only methods for indirectly checking the progress of bonding.
したがって、未接合部が存在しているにもかかわらず設
定した電圧印加時間が過ぎたため完了させることもあり
、結果的には歩留りを低下させていた。Therefore, even though there is an unbonded part, the set voltage application time has passed and the process is sometimes completed, resulting in a decrease in yield.
この発明は上記のような問題点を解消するためになされ
たもので、接合進行状況を確認しながら陽極接合を行な
い高い歩留りを得ることを目的とする。This invention was made to solve the above-mentioned problems, and aims to obtain a high yield by performing anodic bonding while checking the progress of bonding.
本発明にかかる陽極接合方法は、パイレックスガラスと
シリコンウェハを陽極接合する際に、パイレックスガラ
ス裏面に形成するメタライズ層に、パイレックスガラス
周辺でメタライズ層を設けない領域を作ったものである
。In the anodic bonding method according to the present invention, when anodic bonding is performed between Pyrex glass and a silicon wafer, a region where no metallized layer is provided around the Pyrex glass is created in the metallized layer formed on the back surface of the Pyrex glass.
この発明における陽極接合方法では、パイレックスガラ
ス周辺にメタライズ層を設けない領域を作ったので、そ
の領域を真空チャンバーの外側から、接合部と未接合部
の色彩が異なることを利用して作業者の目視めるいｔｘ
Ｉ Ｔ Ｖカメラを用いた画像処理などにより観察す
ることによって接合進行状況をチエツクすることが出来
る。In the anodic bonding method of this invention, an area without a metallized layer is created around the Pyrex glass, and the operator can inspect this area from outside the vacuum chamber by taking advantage of the different colors of the bonded and unbonded areas. Visually visible tx
The progress of bonding can be checked by observing through image processing using an ITV camera.
この方法であｎば接合完了が確実に判定できる。With this method, it is possible to reliably determine that the bonding is complete.
また何らかの異常で通常の接合時間以上に加熱および電
圧印加しても接合が完了しない異常品を陽極接合完了時
に除去できる。さらに陽極接合装置の加熱、電圧印加の
ユニットに何らかの異常がある場合でも、この方法であ
れば早期に発見することが可能である。In addition, abnormal products whose bonding cannot be completed even after applying heat and voltage for longer than the normal bonding time due to some abnormality can be removed when the anodic bonding is completed. Furthermore, even if there is any abnormality in the heating or voltage application unit of the anodic bonding device, it is possible to detect it at an early stage using this method.
以下本発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１図は、本発明の一実施例を表わすパイレックスガラ
スの裏面（接合面の反対側の面）の図であり、第２図は
第１図のト」方向に見た断面図である。FIG. 1 is a diagram of the back surface (the surface opposite to the bonding surface) of a Pyrex glass representing an embodiment of the present invention, and FIG. 2 is a sectional view taken in the "T" direction of FIG. 1.
図において、（１）〜（３）は従来例と全く同一のもの
である。ただし、本発明においては、メタライズ層（１
）（図中の斜線を施した部分）は従来例のようにパイレ
ックスガラス（２）の裏面全面に設けらｎてはおらず、
周辺部は設け、ら口ていない領域（６）がある。In the figure, (1) to (3) are completely the same as the conventional example. However, in the present invention, the metallized layer (1
) (shaded area in the figure) is not provided on the entire back surface of the Pyrex glass (2) as in the conventional example,
The periphery is provided, and there is an open area (6).
このメタライズ層（υを設けてい７Ｊい部分（６） Ｉ
ｔ、パイレックスガラス（２）を通して、シリコンウェ
ハ（３）の色彩か観察出来るので、陽極接合時にＣ；、
接合進行状況を確認出来る。This metallized layer (7J portion (6) where υ is provided) I
t. Since the color of the silicon wafer (3) can be observed through the Pyrex glass (2), C; during anodic bonding.
You can check the progress of joining.
第１図において、シリコンウェハ（３）上の個々のセン
サーチップ（４）は、まだダイシング工程前なので、分
割されておらず、−点鎖線（仮想線）で示した。また、
各々のセンサーチップ（４）ごとに設けらｎたダイヤフ
ラム（５）は、パイレックスガラス（２）の裏側にある
ので、破線で示したが、メタライズ層（１）におおわｎ
ていない領域のパイレックスガラス（２）の長側にある
ダイヤプラム（５）は、ガラスを通して目視出来る。メ
タライズ層（１）におおわｎた部分（図中の斜線部分）
は、実際はメタライズ層しか見えｒＪいが、参考のため
に、一部その下の様子（ダイヤフラム（５ン、センサー
チップ（４））を示した。In FIG. 1, the individual sensor chips (4) on the silicon wafer (3) have not been divided yet because they have not yet been subjected to the dicing process, and are indicated by dashed-dot lines (imaginary lines). Also,
The diaphragm (5) provided for each sensor chip (4) is shown with a broken line because it is on the back side of the Pyrex glass (2).
The diaphragm (5) on the long side of the Pyrex glass (2) in the unmarked area is visible through the glass. The part covered by the metallized layer (1) (the shaded part in the figure)
In reality, only the metallized layer is visible, but for reference, we have shown a portion of what's underneath (diaphragm (5mm, sensor chip (4)).
なお、上記実施例では、メタライズ層（１）をパイレッ
クスガラス（２）外周に全て設けない場合を示したが、
第３図に示すように、パイレックスガラス（２）の外周
の４角に円形のメタライズ層（１）のない部分（６）を
設けてもよい。In addition, in the above example, the case was shown in which the metallized layer (1) was not provided entirely on the outer periphery of the Pyrex glass (2), but
As shown in FIG. 3, circular portions (6) without the metallized layer (1) may be provided at the four corners of the outer periphery of the Pyrex glass (2).
第４図は、第３図のｆＶ−ＩＶ力方向見た断面図である
。FIG. 4 is a sectional view taken along the line fV-IV of FIG. 3 in the force direction.
また、第３図で１＝メタライズ層（１）のない部分（６
）の形状を円形としたが、円形でなくてもまく形状には
こだわらない。また、個数も４個でなくても構わない。In addition, in Fig. 3, 1 = part without metallized layer (1) (6
) is circular, but there is no need to worry about the shape of the sowing even if it is not circular. Further, the number does not have to be four.
以上のように、本発明によｎば陽極接合の接合進行状況
を確認できるので、接合完了が確実に判定でき、したが
って、歩留りがよく、効率のよい生産が可能となる。ま
た、直材の異常による不具合あるいは装置異常による不
具合も早期発見でき、生産管理も効率よ〈実施できる。As described above, according to the present invention, it is possible to check the progress of anodic bonding, so that it is possible to reliably determine the completion of bonding, thereby achieving high yield and efficient production. In addition, defects caused by abnormalities in direct materials or equipment abnormalities can be detected early, and production management can be carried out more efficiently.
第１図は本発明の一実施例によるパイレックスガラスの
裏面を示す図、第２図は第１図の１−１方向に見た断面
図、第３図は本発明の他の実施例のパイレックスガラス
の裏面を示す図、第４図１ま第３図のｆｆ−ＩＹ力方向
見た断面図、第５図は従来のパイレックスガラスの裏面
を示す図、第６図は第５図の■−■方向に見た断面図、
第７図は圧力センサーの断面図である。
図において、 （１） ：メタライズ層、 （２） ：
パイレックスガラス、（３） ：シリコンウエハ、（４
） ：センサーチップ、（５）：ダイヤフラム、（６）
：メタライズ除去部である。
なお、各図中、同一符号は同一、又は相当部分を示す。FIG. 1 is a diagram showing the back side of a Pyrex glass according to an embodiment of the present invention, FIG. 2 is a sectional view taken in the direction 1-1 of FIG. 1, and FIG. 3 is a diagram showing a Pyrex glass according to another embodiment of the present invention Figure 4 is a diagram showing the back side of the glass, Figure 4 is a sectional view taken in the ff-IY force direction of Figures 1 to 3, Figure 5 is a diagram showing the back side of conventional Pyrex glass, Figure 6 is the cross-sectional view of Figure 5 - ■Cross-sectional view as seen in the direction,
FIG. 7 is a sectional view of the pressure sensor. In the figure, (1): metallized layer, (2):
Pyrex glass, (3) : Silicon wafer, (4
): Sensor chip, (5): Diaphragm, (6)
: This is the metallization removal part. In each figure, the same reference numerals indicate the same or equivalent parts.
Claims (1)
合において、パイレックスガラス裏面に形成するメタラ
イズ層に、パイレックスガラス周辺でメタライズ層を設
けない領域を作ったことを特徴とする陽極接合方法。An anodic bonding method for bonding Pyrex glass and silicon wafers, which is characterized by creating an area in the metallized layer formed on the back side of the Pyrex glass where no metallized layer is provided around the Pyrex glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2290477A JP2569946B2 (en) | 1990-10-25 | 1990-10-25 | Anodic bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2290477A JP2569946B2 (en) | 1990-10-25 | 1990-10-25 | Anodic bonding method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04164841A true JPH04164841A (en) | 1992-06-10 |
| JP2569946B2 JP2569946B2 (en) | 1997-01-08 |
Family
ID=17756523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2290477A Expired - Lifetime JP2569946B2 (en) | 1990-10-25 | 1990-10-25 | Anodic bonding method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2569946B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5900671A (en) * | 1994-07-12 | 1999-05-04 | Mitsubishi Denki Kabushiki Kaisha | Electronic component including conductor connected to electrode and anodically bonded to insulating coating |
| ES2141008A1 (en) * | 1996-12-19 | 2000-03-01 | Consejo Superior Investigacion | Non-destructive method for determining the quality of anodic welding and improvement of contacts |
| DE19549563B4 (en) * | 1994-07-12 | 2004-03-25 | Mitsubishi Denki K.K. | Semiconductor chip electronic component with current input and output conductor |
| US6852420B2 (en) | 2000-12-04 | 2005-02-08 | Nippon Sheet Glass Co., Ltd. | Optical device, mold, and method of producing the same |
| DE19525388B4 (en) * | 1994-07-12 | 2005-06-02 | Mitsubishi Denki K.K. | Electronic component with anodically bonded lead frame |
| JP2010197309A (en) * | 2009-02-26 | 2010-09-09 | Alps Electric Co Ltd | Mems sensor, and method for manufacturing the same |
| US8529724B2 (en) | 2003-10-01 | 2013-09-10 | The Charles Stark Draper Laboratory, Inc. | Anodic bonding of silicon carbide to glass |
-
1990
- 1990-10-25 JP JP2290477A patent/JP2569946B2/en not_active Expired - Lifetime
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6310395B1 (en) | 1994-07-12 | 2001-10-30 | Mitsubishi Denki Kabushiki Kaisha | Electronic component with anodically bonded contact |
| US6087201A (en) * | 1994-07-12 | 2000-07-11 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing ball grid array electronic component |
| US6133069A (en) * | 1994-07-12 | 2000-10-17 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing the electronic using the anode junction method |
| US6181009B1 (en) | 1994-07-12 | 2001-01-30 | Mitsubishi Denki Kabushiki Kaisha | Electronic component with a lead frame and insulating coating |
| US6268647B1 (en) | 1994-07-12 | 2001-07-31 | Mitsubishi Denki Kabushiki Kaisha | Electronic component with an insulating coating |
| US5900671A (en) * | 1994-07-12 | 1999-05-04 | Mitsubishi Denki Kabushiki Kaisha | Electronic component including conductor connected to electrode and anodically bonded to insulating coating |
| DE19549563B4 (en) * | 1994-07-12 | 2004-03-25 | Mitsubishi Denki K.K. | Semiconductor chip electronic component with current input and output conductor |
| DE19525388B4 (en) * | 1994-07-12 | 2005-06-02 | Mitsubishi Denki K.K. | Electronic component with anodically bonded lead frame |
| DE19549750B4 (en) * | 1994-07-12 | 2005-07-14 | Mitsubishi Denki K.K. | Electronic component with anodisch gebontetem lead frame |
| ES2141008A1 (en) * | 1996-12-19 | 2000-03-01 | Consejo Superior Investigacion | Non-destructive method for determining the quality of anodic welding and improvement of contacts |
| US6852420B2 (en) | 2000-12-04 | 2005-02-08 | Nippon Sheet Glass Co., Ltd. | Optical device, mold, and method of producing the same |
| US8529724B2 (en) | 2003-10-01 | 2013-09-10 | The Charles Stark Draper Laboratory, Inc. | Anodic bonding of silicon carbide to glass |
| JP2010197309A (en) * | 2009-02-26 | 2010-09-09 | Alps Electric Co Ltd | Mems sensor, and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2569946B2 (en) | 1997-01-08 |
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