JPH04143274A - Thin film forming device - Google Patents
Thin film forming deviceInfo
- Publication number
- JPH04143274A JPH04143274A JP26819790A JP26819790A JPH04143274A JP H04143274 A JPH04143274 A JP H04143274A JP 26819790 A JP26819790 A JP 26819790A JP 26819790 A JP26819790 A JP 26819790A JP H04143274 A JPH04143274 A JP H04143274A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- film forming
- holder
- flying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 7
- 239000000463 material Substances 0.000 abstract 4
- 230000001815 facial effect Effects 0.000 abstract 2
- 239000010408 film Substances 0.000 abstract 2
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 230000008016 vaporization Effects 0.000 abstract 1
- 238000009834 vaporization Methods 0.000 abstract 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利
本発明は、薄膜形成装置に関し、詳しくは、基板を揺動
させつつ回転させながら薄膜を形成することにより、基
板上に膜厚の均一な薄膜を形成することを可能とした薄
膜形成装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thin film forming apparatus, and more specifically, it forms a thin film with a uniform thickness on a substrate by forming a thin film while shaking and rotating the substrate. The present invention relates to a thin film forming apparatus that makes it possible to
従】40【4
真空蒸着装置などの薄膜形成装置においては、基板上に
均一な薄膜を形成することが要求される。しかしながら
、大きな基板面や、レンズ形状のように曲率をもった基
板面に均一な薄膜を形成することは困難な場合が多い。[40] In a thin film forming apparatus such as a vacuum evaporation apparatus, it is required to form a uniform thin film on a substrate. However, it is often difficult to form a uniform thin film on a large substrate surface or a substrate surface with curvature such as a lens shape.
真空蒸着装置において、蒸発源は理想的には点源と考え
られ、膜厚の分布は照明系の強度を求めるのと全く同じ
方法によって計算できる。In a vacuum evaporation system, the evaporation source is ideally considered a point source, and the film thickness distribution can be calculated in exactly the same way as the intensity of the illumination system.
煮蒸発源から微小平面上の付着量は次式で表わされる(
第6図参照)。The amount of adhesion from the boiling evaporation source to the microplane is expressed by the following formula (
(See Figure 6).
dM=1・□・d8
4π γ2
ds:微小平面
d、4:立体角を通過する付着量
m:単位時間に蒸着された量
θ:蒸発源と微小平面の垂線とのなす角(入射角)γ:
蒸発源と微小平面との距離
したがって、基板を単に水平に並べたのでは、各基板ご
とに蒸発源からの距離および入射角が異なり、均一な膜
厚を形成することができない。dM=1・□・d8 4π γ2 ds: Microplane d, 4: Amount of deposition passing through the solid angle m: Amount deposited per unit time θ: Angle between the evaporation source and the perpendicular to the microplane (incident angle) γ:
Distance between evaporation source and microplane Therefore, if the substrates are simply arranged horizontally, the distance from the evaporation source and the angle of incidence will differ for each substrate, making it impossible to form a uniform film thickness.
そこで、ドーム状に基板を支持して蒸発源からの距離お
よび入射角が等しくなるようにし、かつ、基板を回転さ
せて均一化を図ったり、あるいは、蒸発源と基板との間
に、蒸発源から飛翔する蒸着材料を一部遮蔽する補正板
を設けて膜厚分布の均一化を図ることが行なわれている
。Therefore, the substrate is supported in a dome shape so that the distance from the evaporation source and the angle of incidence are equal, and the substrate is rotated to achieve uniformity, or the evaporation source is placed between the evaporation source and the substrate. In order to make the film thickness distribution uniform, a correction plate is provided to partially block the vapor deposition material flying from the film.
さらに、基板ホルダを幾つかの基板を含む複数の区域に
分割し、この分割した単位体を回転(自転)させると共
に、基板ホルダ全体を回転(公転)させて膜厚の均一化
を図る遊星回転機構も知られている。Furthermore, the substrate holder is divided into multiple areas containing several substrates, and the divided units are rotated (rotated), and the entire substrate holder is rotated (revolutionized) using planetary rotation to ensure uniform film thickness. The mechanism is also known.
しかしながら、上記いずれの方法も膜厚の均一化という
点では必ずしも十分でなく、よりいっそうの改善がまた
れている。膜厚の均一化が実現すれば、多数の基板を一
度に処理することや、大型平面基板、大型曲面基板に均
一な薄膜を形成することが可能となる。However, none of the above methods is necessarily sufficient in terms of making the film thickness uniform, and further improvements are needed. If uniform film thickness is achieved, it will be possible to process many substrates at once and to form uniform thin films on large flat substrates and large curved substrates.
明が解 しようとする課
本発明は、基板上に均一な膜厚の薄膜を形成することを
可能とした薄膜形成装置を提供するものである。SUMMARY OF THE INVENTION The present invention provides a thin film forming apparatus that is capable of forming a thin film of uniform thickness on a substrate.
A1111暖
本発明の薄膜形成装置は、
薄膜形成材料の飛翔源に向けて基板を支持する基板ホル
ダと、
薄膜形成材料の飛翔方向に対して基板ホルダを揺動しつ
つ、この飛翔方向と交差する面方向に基板ホルダを回転
させる揺動回転機構を具えたことを特徴とする。A1111 The thin film forming apparatus of the present invention includes: a substrate holder that supports a substrate toward a flying source of thin film forming material; and a substrate holder that supports a substrate in a direction in which the thin film forming material flies, while swinging the substrate holder in a direction that intersects with the flying direction. The substrate holder is characterized in that it includes a swinging rotation mechanism that rotates the substrate holder in the plane direction.
生−m−■
上記構成によれば、薄膜形成材料の飛翔方向に基板を揺
動させつつ回転させながら、基板上に薄膜形成材料が堆
積されて薄膜が形成されることになり、基板と薄膜形成
材料の飛翔源との距離が刻々と変化し、基板上に堆積す
る薄膜量の均一化を図ることができる。According to the above configuration, the thin film forming material is deposited on the substrate and a thin film is formed while the substrate is oscillated and rotated in the flying direction of the thin film forming material, and the thin film forming material is deposited on the substrate. The distance from the flying source of the forming material changes moment by moment, and the amount of thin film deposited on the substrate can be made uniform.
大−施一気
第1図は、本発明を真空蒸着装置に応用した場合の実施
例を示す概念図であり、第2図は基板の揺動回転機構を
示す斜視図である。FIG. 1 is a conceptual diagram showing an embodiment in which the present invention is applied to a vacuum evaporation apparatus, and FIG. 2 is a perspective view showing a swinging and rotating mechanism for a substrate.
真空槽11の下部には、蒸発源13(薄膜形成材料の飛
翔源)が設けられ、−右上部には基板の揺動回転機構2
1が設けられている。An evaporation source 13 (a flying source for the thin film forming material) is provided at the bottom of the vacuum chamber 11, and a substrate swinging and rotating mechanism 2 is provided at the upper right.
1 is provided.
揺動回転機構21は、11[数の基板73を搭載したマ
スク71を支持する基板ホルダ51、基板ホルダ51を
回転可能に支持する揺動部材31、揺動部材31を揺動
自在に支持する主回転軸23、揺動部材31の揺動をガ
イドするガイドリング61から主として構成されている
。The swinging rotation mechanism 21 includes a substrate holder 51 that supports a mask 71 carrying eleven substrates 73, a swinging member 31 that rotatably supports the substrate holder 51, and a swinging member 31 that swingably supports the swinging member 31. It mainly consists of the main rotating shaft 23 and a guide ring 61 that guides the swinging of the swinging member 31.
主回転軸23には4本の支持アーム25が設けられてお
り、支持アーム25の先端の支持ブロック27に揺動部
材31が、吊られるようにして取り付けられている。第
3図は、この状態を示す平面図であり、揺動部材31上
の基板ホルダ51を取り外した状態で示しである。リン
グ状の揺動部材31には2本の揺動軸33が固定されて
おり、この揺動軸33が支持ブロック27に対して回転
自在に嵌装されている。揺動部材31にはガイドローラ
35が取り付けられており、このガイドローラ35はガ
イドリング61の下方側に刻設されたガイド63溝に嵌
め込まれている。ガイド溝63は、蒸着材料15(薄膜
形成材料)の飛翔方向A(第1図参照)に蛇行して、ガ
イドリング61の全周にわたって刻設されている。The main rotating shaft 23 is provided with four support arms 25, and a swinging member 31 is hung from a support block 27 at the tip of the support arm 25. FIG. 3 is a plan view showing this state, with the substrate holder 51 on the swinging member 31 removed. Two swing shafts 33 are fixed to the ring-shaped swing member 31, and the swing shafts 33 are rotatably fitted to the support block 27. A guide roller 35 is attached to the swinging member 31, and the guide roller 35 is fitted into a guide 63 groove carved on the lower side of the guide ring 61. The guide groove 63 is carved along the entire circumference of the guide ring 61 so as to meander in the flight direction A (see FIG. 1) of the vapor deposition material 15 (thin film forming material).
揺動部材31上には、第4図に示すようにボールベアリ
ング43を介して、リング状の基板ホルダ51が載置さ
れている。揺動部材31に固定された4つの支持杆39
に回転自在に支持ローラ41が取り付けら九でいる(第
5図参照)。この支持ローラ41により、基板ホルダ5
1が揺動部材31に対して押え付けられ、基板ホルダ5
1は滑落することなく、揺動部材31のボールベアリン
グ43上で。A ring-shaped substrate holder 51 is placed on the swinging member 31 via a ball bearing 43, as shown in FIG. Four support rods 39 fixed to the swinging member 31
A support roller 41 is rotatably attached to the support roller 41 (see FIG. 5). This support roller 41 allows the substrate holder 5 to
1 is pressed against the swinging member 31, and the substrate holder 5
1 on the ball bearing 43 of the swinging member 31 without sliding down.
その仮想軸55(第1図参照)を中心として回転(自転
)することができる。基板ホルダ51の外周面には歯5
3が刻設されており、ガイドリング61のガイド溝63
より上側の内周面に刻設された歯65と、ラック・ピニ
オンを構成している。基板ホルダ51には、複数の基板
73を搭載したマスク71が、その中央部を蒸発源13
に向けて凸出するようにして、載置されている。It can rotate (rotate) around its virtual axis 55 (see FIG. 1). Teeth 5 are provided on the outer peripheral surface of the substrate holder 51.
3 is carved in the guide groove 63 of the guide ring 61.
The teeth 65 carved on the inner peripheral surface of the upper side constitute a rack and pinion. A mask 71 with a plurality of substrates 73 mounted on the substrate holder 51 has its central part connected to the evaporation source 13.
It is placed so that it protrudes toward.
真空蒸着に際しては、主回転軸23を回転させることに
より、基板ホルダ51を揺動回転させながら、蒸発源1
3から蒸着材料15を蒸発させることにより、数多くの
基板上に膜厚の均一な薄膜を形成させることができる。During vacuum evaporation, by rotating the main rotation shaft 23, the evaporation source 1 is
By evaporating the deposition material 15 from 3, it is possible to form a thin film with a uniform thickness on many substrates.
主回転軸23を回転させると、支持アーム25、支持ブ
ロック27を介して揺動軸33により取り付けられた4
つの揺動部材31が主回転軸23を中心として回転し、
この上に載置された基板ホルダ51が回転(公転)する
。また、ガイドリング61とのラック・ピニオン機構に
より、基板ホルダ51自体もその仮想軸55(第1図参
照)を中心として回転(自転)する。すなわち、第1図
に示すように基板ホルダ51は、蒸発源13に基板面を
向けて、蒸着材料15の飛翔方向(矢印A)と交差する
面方向に自転(矢印r)および公転(矢印R)する。ま
た、蒸着材料15の飛翔方向Aに蛇行するガイド部材6
1のガイド溝63内をガイドローラ35が回転。When the main rotation shaft 23 is rotated, the support arm 25 and the support block 27 are connected to the four
The two swinging members 31 rotate around the main rotating shaft 23,
A substrate holder 51 placed on this rotates (revolutions). Further, due to the rack and pinion mechanism with the guide ring 61, the substrate holder 51 itself also rotates (rotates) around its virtual axis 55 (see FIG. 1). That is, as shown in FIG. 1, the substrate holder 51 rotates (arrow r) and revolves (arrow R) in a plane that intersects the flight direction (arrow A) of the evaporation material 15, with the substrate surface facing the evaporation source 13. )do. Further, a guide member 6 meandering in the flight direction A of the vapor deposition material 15
The guide roller 35 rotates within the guide groove 63 of No. 1.
摺動しながら移動することにより、ガイドローラ35に
固定された揺動部材31がその公転につれて、矢印方向
Bに揺動を繰り返す。第4図に揺動前後の状態を直線お
よび一点鎖線で示した。By slidingly moving, the swinging member 31 fixed to the guide roller 35 repeats swinging in the direction of the arrow B as it revolves. In FIG. 4, the states before and after the rocking are shown by straight lines and dashed lines.
このように、回転させつつ揺動させることにより、基板
53と蒸発源13との距離が刻々と変化して、蒸発条件
の均一化が図れ、同一真空槽内の多数の基板面に対して
均一な膜厚で薄膜を形成することができる。In this way, by rotating and rocking the substrate 53, the distance between the substrate 53 and the evaporation source 13 changes moment by moment, making it possible to equalize the evaporation conditions, which can be applied uniformly to many substrate surfaces within the same vacuum chamber. It is possible to form a thin film with a thickness of
なお、本発明は、上記実施例に限定されず、種々の変形
が可能である。Note that the present invention is not limited to the above embodiments, and various modifications are possible.
例えば以上の実施例では、多数の基板がセットされたマ
スク71を、基板ホルダ31上に搭載する場合を示した
が、1個の大型基板を基板ホルダ31に搭載してもよい
。For example, in the above embodiment, the mask 71 with a large number of substrates set thereon is mounted on the substrate holder 31, but one large substrate may be mounted on the substrate holder 31.
また、揺動回転機構も第2図に示したものに限定されず
、例えば、主回転輪23から、その回転に伴なって揺動
を繰り返す揺動アームを複数突出せしめ、これに基板ホ
ルダを回転自在に取り付けてもよい。Further, the swinging rotation mechanism is not limited to the one shown in FIG. 2. For example, a plurality of swinging arms that repeatedly swing as the main rotating wheel 23 protrudes as the main rotating wheel rotates, and a substrate holder is attached to these swinging arms. It may be attached rotatably.
見更魚夏果
本発明によれば、基板ホルダを、薄膜形成材料の飛翔方
向に対して揺動しつつ、この飛翔方向に交差する面方向
に回転さる揺動回転機構を薄膜形成装置に設けることに
より、同一真空槽内で処理される多数の基板や、大面積
の基板に厚さの均一な薄膜を形成することができる。According to the present invention, the thin film forming apparatus is provided with a swinging rotation mechanism that swings the substrate holder relative to the flying direction of the thin film forming material and rotates the substrate holder in a plane direction intersecting the flying direction. As a result, thin films with uniform thickness can be formed on a large number of substrates or large area substrates that are processed in the same vacuum chamber.
第1図は本発明の薄膜形成装置の実施例を示す模式図で
あり、第2図はその揺動回転機構を示す斜視図である。
第3図は、揺動部材31の支持アーム25への取付は状
態を示す平面図であり、揺動部材31上へ搭載されるボ
ールベアリング43および基板ホルダ51を取り外した
状態で示している。
第4図は揺動部材31上での基板ホルダ51の支持状態
および揺動の前後を示す断面図である。
但し、ハツチングは付与していない。
第5図は、支持ローラ41の近傍を示す断面図である。
但し、ハツチングは付与していない。
第6図は、煮蒸発源からの微小平面上の付漕量を示す説
明図である。
11・・・真 空 槽
15・・・蒸着材料
23・・・主回転軸
27・・・支持ブロック
33・・・揺 動 軸
39・・・支 持 杆
43・・・ボールベアリング
51・・・基板ホルダ
61・・・ガイドリング
65・・・歯
73・・・基 板
13・・・蒸 発 源
21・・・揺動回転機構
25・・・支持アーム
31・・・揺動部材
35・・・ガイドローラ
41・・・支持ローラ
53・・・歯
63・・・ガイ ド溝
71・・・マ
ス
ク
特許出願人 真空器械工業株式会社
代理人弁理士 臼 村 文 見、−テ第
図
第2
図
蒸発源FIG. 1 is a schematic diagram showing an embodiment of the thin film forming apparatus of the present invention, and FIG. 2 is a perspective view showing its swinging and rotating mechanism. FIG. 3 is a plan view showing how the swinging member 31 is attached to the support arm 25, with the ball bearing 43 mounted on the swinging member 31 and the substrate holder 51 removed. FIG. 4 is a cross-sectional view showing the supported state of the substrate holder 51 on the swinging member 31 and before and after swinging. However, hatching is not added. FIG. 5 is a sectional view showing the vicinity of the support roller 41. However, hatching is not added. FIG. 6 is an explanatory diagram showing the amount of water applied on a microscopic plane from the boiling evaporation source. 11... Vacuum tank 15... Vapor deposition material 23... Main rotating shaft 27... Support block 33... Swing shaft 39... Support rod 43... Ball bearing 51... Substrate holder 61... Guide ring 65... Teeth 73... Substrate 13... Evaporation source 21... Swinging rotation mechanism 25... Support arm 31... Swinging member 35...・Guide roller 41...Support roller 53...Teeth 63...Guide groove 71...Mask patent applicant Shinku Kikai Kogyo Co., Ltd. Patent attorney Representative Usumura Fumi Mi-Te Figure 2 Evaporation source
Claims (1)
ホルダと、 薄膜形成材料の飛翔方向に対して基板ホル ダを揺動しつつ、この飛翔方向と交差する面方向に基板
ホルダを回転させる揺動回転機構を具えたことを特徴と
する薄膜形成装置。 2.前記飛翔方向と交差する面方向で、複数の前記基板
ホルダが円周上に配置されるように支持し、この円周に
沿って基板ホルダを回転させるとともに、各々の基板ホ
ルダ自体をその仮想軸を中心として自転させる遊星回転
機構を具えた請求項1記載の薄膜形成装置。3.薄膜形
成材料の飛翔源に向けて基板を支持する複数の基板ホル
ダと、 薄膜形成材料の飛翔方向と交差する面方向 で基板ホルダをその仮想軸を中心として自転可能に支持
する複数の揺動部材と、 前記飛翔方向と交差する面方向で、複数の 揺動部材が円周上に配置されるように、これら揺動部材
を上記飛翔方向に揺動可能に支持し、これら揺動部材を
上記円周に沿って回転させる公転回転部材とを具えたこ
とを特徴とする薄膜形成装置。 4.前記揺動部材が、前記飛翔方向に蛇行するガイド部
材と係合する係合端子を具え、上記円周に沿っての回転
に伴ない、ガイド部材との係合に規制されて揺動する請
求項3記載の薄膜形成装置。[Claims] 1. A substrate holder that supports the substrate toward a flying source of the thin film forming material, and a rocking motion that rotates the substrate holder in a plane direction that intersects with the flying direction while swinging the substrate holder in the flying direction of the thin film forming material. A thin film forming device characterized by being equipped with a rotation mechanism. 2. A plurality of substrate holders are supported so as to be arranged on a circumference in a plane direction intersecting the flight direction, and the substrate holders are rotated along the circumference, and each substrate holder itself is rotated along its virtual axis. 2. The thin film forming apparatus according to claim 1, further comprising a planetary rotation mechanism that rotates about its axis. 3. A plurality of substrate holders that support the substrate toward a flying source of the thin film forming material, and a plurality of swinging members that support the substrate holder so as to be able to rotate about its virtual axis in a plane direction intersecting the flying direction of the thin film forming material. and supporting a plurality of swinging members so as to be swingable in the flight direction so that the swinging members are arranged on a circumference in a plane direction intersecting the flight direction, and supporting these swinging members so as to be swingable in the flight direction. 1. A thin film forming apparatus comprising: a revolving member that rotates along a circumference. 4. The swinging member includes an engagement terminal that engages with the guide member meandering in the flight direction, and swings while being restricted by engagement with the guide member as it rotates along the circumference. Item 3. The thin film forming apparatus according to item 3.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26819790A JPH04143274A (en) | 1990-10-05 | 1990-10-05 | Thin film forming device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26819790A JPH04143274A (en) | 1990-10-05 | 1990-10-05 | Thin film forming device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04143274A true JPH04143274A (en) | 1992-05-18 |
Family
ID=17455273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26819790A Pending JPH04143274A (en) | 1990-10-05 | 1990-10-05 | Thin film forming device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04143274A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100448180B1 (en) * | 2002-02-26 | 2004-09-10 | 디지웨이브 테크놀러지스 주식회사 | MOCVD Reactor having a Planetary Gear Structure |
JP2015514162A (en) * | 2012-04-16 | 2015-05-18 | ザ・ティムケン・カンパニーThetimken Company | Method and table assembly for coating spherical parts |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6360275A (en) * | 1986-08-29 | 1988-03-16 | Shimadzu Corp | Sputtering device |
JPS6365069A (en) * | 1986-09-08 | 1988-03-23 | Hitachi Ltd | Sputtering device |
JPS6428371A (en) * | 1987-07-24 | 1989-01-30 | Oki Electric Ind Co Ltd | Substrate turning mechanism |
JPH01133320A (en) * | 1987-11-18 | 1989-05-25 | Toshiba Mach Co Ltd | Thin-film processing device |
JPH02115365A (en) * | 1988-10-25 | 1990-04-27 | Mitsubishi Electric Corp | Sputtering device |
-
1990
- 1990-10-05 JP JP26819790A patent/JPH04143274A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6360275A (en) * | 1986-08-29 | 1988-03-16 | Shimadzu Corp | Sputtering device |
JPS6365069A (en) * | 1986-09-08 | 1988-03-23 | Hitachi Ltd | Sputtering device |
JPS6428371A (en) * | 1987-07-24 | 1989-01-30 | Oki Electric Ind Co Ltd | Substrate turning mechanism |
JPH01133320A (en) * | 1987-11-18 | 1989-05-25 | Toshiba Mach Co Ltd | Thin-film processing device |
JPH02115365A (en) * | 1988-10-25 | 1990-04-27 | Mitsubishi Electric Corp | Sputtering device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100448180B1 (en) * | 2002-02-26 | 2004-09-10 | 디지웨이브 테크놀러지스 주식회사 | MOCVD Reactor having a Planetary Gear Structure |
JP2015514162A (en) * | 2012-04-16 | 2015-05-18 | ザ・ティムケン・カンパニーThetimken Company | Method and table assembly for coating spherical parts |
US9543127B2 (en) | 2012-04-16 | 2017-01-10 | The Timken Company | Method and table assembly for applying coatings to spherical components |
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