JPH04142061A - Formation of tungsten plug - Google Patents
Formation of tungsten plugInfo
- Publication number
- JPH04142061A JPH04142061A JP26451890A JP26451890A JPH04142061A JP H04142061 A JPH04142061 A JP H04142061A JP 26451890 A JP26451890 A JP 26451890A JP 26451890 A JP26451890 A JP 26451890A JP H04142061 A JPH04142061 A JP H04142061A
- Authority
- JP
- Japan
- Prior art keywords
- tungsten
- film
- wiring
- interconnection
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010937 tungsten Substances 0.000 title claims abstract description 59
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 59
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 57
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 abstract description 11
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000011800 void material Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 17
- 239000011229 interlayer Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 3
- 229910018503 SF6 Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- 241000282326 Felis catus Species 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 150000003657 tungsten Chemical class 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、半導体装置製造における配線技術に関し、特
に、コンタクトホール等に埋め込まれるタングステンプ
ラグの形成方法に係わる。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to wiring technology in semiconductor device manufacturing, and particularly to a method for forming tungsten plugs embedded in contact holes and the like.
［発明の概要：
本発明は、タングステンプラグの形成方法において、
絶縁膜に配線用開口部を形成する工程と、前記絶縁膜」
−及び前記配線用開口部内にタングステンをブランケッ
ト成長させて該配線用開口部を密に埋め込む工程と、前
記タングステンにエッチバックを施し前記配線用開口部
の開口縁よりも下方にタングステンが残留するようにオ
ーバーエツチングする工程と、前記配線用開口部内のタ
ングステン上にさらにタングステンを選択成長させて該
配線用開口部を埋め込む工程を備えることにより、配線
用開口部の開口面に対して窪みのないタングステンプラ
グを形成し、上層配線の被覆性（カバレッジ）を良好に
して配線の信頼性を向上し得るようにしたものである。[Summary of the Invention: The present invention provides a method for forming a tungsten plug, comprising: a step of forming a wiring opening in an insulating film; and a step of forming a wiring opening in an insulating film.
- a step of blanket growing tungsten in the wiring opening to densely bury the wiring opening, and etching back the tungsten so that the tungsten remains below the edge of the wiring opening. By over-etching the tungsten in the wiring opening, and further selectively growing tungsten on the tungsten in the wiring opening to fill the wiring opening, tungsten can be formed without making a depression with respect to the opening surface of the wiring opening. A plug is formed to improve the coverage of the upper layer wiring, thereby improving the reliability of the wiring.
［従来の技術〕
次世代の超々ＬＳＩプロセスでの最大の課題は、配線技
術といってよい。第２図に示すように、従来のアルミニ
ウム配線３ては、例えばノリコン基板ｌ−ヒの層間絶縁
膜２に開口したコンタクトホール２ａ内にボイド４を生
じた状態で形成されるなとの問題を有している。このよ
うな、アルミニウム配線の膜被覆性（ステップカバレッ
ジ）やマイグレーンヨン耐性の低下は、微細化に伴う薄
膜化で著しくなる。このため、ステップカバレッジが良
く、しかも従来のポリンリコンプラグなどと比較してコ
ンタクト抵抗を低くする、ブランケットタングステンＣ
ＶＤとエッチバックを組み合せたプロセス技術が注目を
集めている。[Prior Art] The biggest challenge in next-generation ultra-super LSI processes can be said to be wiring technology. As shown in FIG. 2, the conventional aluminum wiring 3 has a problem in that it is formed with voids 4 in the contact holes 2a opened in the interlayer insulating film 2 of the Noricon substrate 1, for example. have. Such decreases in film coverage (step coverage) and migration resistance of aluminum wiring become more significant as the film becomes thinner with miniaturization. For this reason, the blanket tungsten C plug has good step coverage and lower contact resistance compared to conventional polycarbonate plugs.
Process technology that combines VD and etchback is attracting attention.
この方法は、第３図Ａに示すように、例えばシリコン基
板１上の層間絶縁膜２にコンタクトホール２ａを開口し
た後、窒化チタン、チタンオキシナイトライドなとてな
る密着層４を被着させ、その後、タングステン層５を気
相成長法（ＣＶＤ）によりブランケット成長させる。In this method, as shown in FIG. 3A, for example, after a contact hole 2a is opened in an interlayer insulating film 2 on a silicon substrate 1, an adhesion layer 4 made of titanium nitride or titanium oxynitride is deposited. Thereafter, the tungsten layer 5 is blanket grown by vapor phase epitaxy (CVD).
次に、第３図Ｂに示すようにタングステン層５のエッチ
バックを行ない、コンタクトホール２ａ内のみにタング
ステン層（タングステンプラグ）５を残し、次いて、第
３図Ｃに示すように、アルミニウム配線６をスパッタ法
により形成して上層配線とする。Next, as shown in FIG. 3B, the tungsten layer 5 is etched back to leave the tungsten layer (tungsten plug) 5 only in the contact hole 2a, and then, as shown in FIG. 3C, the aluminum wiring is etched back. 6 is formed by a sputtering method to form an upper layer wiring.
［発明が解決しようとする課題”
しかしながら、上記した方法は、エッチバックの終点判
定が難しく、コンタクトホール以外のタングステン層が
エッチバックされたところでエツチングされるタングス
テンの量が急激に減るため、エッチャントがコンタクト
ホール内のタングステンプラグに集中し、第３図Ｂに示
すように、コンタクトホールの開口縁より下方までオー
バーエツチングされてしまう問題点があった。[Problems to be Solved by the Invention] However, with the above method, it is difficult to determine the end point of etchback, and the amount of tungsten etched decreases rapidly when the tungsten layer other than the contact hole is etched back. There was a problem in that the tungsten plug in the contact hole was concentrated and overetched to a point below the opening edge of the contact hole, as shown in FIG. 3B.
また、絶縁膜に段差がある場合（例えばゲート電極上方
など）にタングステンが残るため、このタングステンを
除去するためには逆に上記したオーバーエツチングは必
要であるとされている。Furthermore, since tungsten remains when there is a step in the insulating film (for example, above the gate electrode), the above-mentioned overetching is said to be necessary in order to remove this tungsten.
しかし、第３図Ｃに示すように、このようにタングステ
ンプラグかオーバーエツチングされた状態で上層配線と
してのアルミニウム配線６をスパッタ法などにより形成
した場合、段差部分のアルミニウム膜厚か薄くなり、ま
１こ、ともするとボイドを生しるため、ストレスマイグ
レーノヨンやエレクトロマイグレーノヨンを起し、配線
の信頼性を悪くする問題点を有している。However, as shown in FIG. 3C, when the aluminum wiring 6 as the upper layer wiring is formed by sputtering or the like with the tungsten plug over-etched, the thickness of the aluminum film at the stepped portion becomes thinner and the aluminum wiring 6 becomes thinner. First, since voids are often formed, stress migration and electromigration are caused, resulting in poor wiring reliability.
本発明は、このような問題点に着目して創案されたもの
であって、配線用開口部とタングステンプラグによる段
差をなくし、上層配線の信頼性を向上させるタングステ
ンプラグの形成方法を提供するものである。The present invention was devised in view of these problems, and provides a method for forming a tungsten plug that eliminates the level difference between the wiring opening and the tungsten plug and improves the reliability of the upper layer wiring. It is.
１課題を解決するための手段で
そこで、本発明は、絶縁膜に配線用開口部を形成する工
程と、前記絶縁膜上及び前記配線用開口部内にタングス
テンをブランケット成長させて該配線用開口部を密に埋
め込む工程と、前記タングステンにエッチバックを施し
前記配線用開口部の開口縁よりも下方にタングステンが
残留するようにオーバーエツチングする工程と、前記配
線用開口部内のタングステン上にさらにタングステンを
選択成長させて該配線用開口部を埋め込む工程を備える
ことを、その解決方法としている。In order to solve the above problems, the present invention includes a step of forming a wiring opening in an insulating film, and blanket growing tungsten on the insulating film and in the wiring opening. a step of etch-backing the tungsten and over-etching so that tungsten remains below the opening edge of the wiring opening; A solution to this problem is to include a step of selectively growing and burying the wiring opening.
１作用−
配線用開口部内に残留するタングステン上にタングステ
ンを選択成長させることにより、配線用開口部を埋め込
み、上層配線のカバレッジを良好にし、上層配線が配線
用開口部で薄膜化やボイドを生ずるのを防止する。この
ため、上層配線にストレスマイグレーノヨンやエレクト
ロマイグレーンヨンを生しることが防止でき、配線の信
頼性が向上する。1 Effect - By selectively growing tungsten on the tungsten remaining in the wiring opening, the wiring opening is filled, the coverage of the upper layer wiring is improved, and the upper layer wiring becomes thinner and voids occur in the wiring opening. to prevent Therefore, it is possible to prevent stress migration or electromigration from occurring in the upper layer wiring, and the reliability of the wiring is improved.
［実施伊に
以下、本発明に係るタングステンプラグの形成方法の詳
細を図面に示す実施例に基づいて説明する。[Practice] The details of the method for forming a tungsten plug according to the present invention will be explained below based on examples shown in the drawings.
本実施例は、先ず、第１図Ａに示すように、シリコン基
板１上に堆積したＳｉ’Ｏｙでなる層間絶縁膜１１に、
配線用開口部であるコンタクトポールＩｌａを開口した
後、密着層としての窒化チタン（Ｔ ｉ Ｎ）膜１２を
ＣＶＤ法もしくはスパッタ法により薄く被着させ、次に
、ＣＶＤ法によりブランケットタングステン（以下タン
グステン膜と称する）１３Ａを形成し、コンタクトポー
ル１１ａ内を埋め込むと共に層間絶縁膜ｌｌ上に被着さ
せる。In this embodiment, first, as shown in FIG. 1A, an interlayer insulating film 11 made of Si'Oy deposited on a silicon substrate 1 is
After opening the contact pole Ila, which is an opening for wiring, a thin titanium nitride (T i N) film 12 as an adhesion layer is deposited by CVD or sputtering, and then blanket tungsten (hereinafter referred to as tungsten) is deposited by CVD. A film (referred to as a film) 13A is formed, embedding the inside of the contact pole 11a, and depositing it on the interlayer insulating film ll.
このＣＶＤ条件は、２段階の工程を行なった。Under these CVD conditions, a two-step process was performed.
以下、その条件を示す。The conditions are shown below.
（第１段階の条件）
雰囲気ガス及びその流量
六フッ化タングステン（ＷＦ’８）・・・２５５ｃｃｘ
シラン（Ｓ ｉ Ｈ４） −１５ｓｃｃ。(First stage conditions) Atmospheric gas and its flow rate Tungsten hexafluoride (WF'8)...255ccx
Silane (S i H4) -15scc.
温度 ・・・４７５℃
圧力 −８０Ｔ ｏ ｒ ｒ（第２段階
の条件）
雰囲気ガス及びその流量
六フッ化タングステン（ＷＦｅ）・・・６０ ＳＣＣＭ
水素（Ｈ７） ・３６ｏｓＣＣイ温度
・４７５℃
圧力 ・・８０ＴＯｒｒ次に、第１図Ｂ
に示すように、タングステン膜１３Ａ及び窒化チタン膜
１２をエッチバックする。Temperature...475℃ Pressure -80T o r r (second stage conditions) Atmospheric gas and its flow rate Tungsten hexafluoride (WFe)...60 SCCM
Hydrogen (H7) ・36osCC Temperature ・475℃ Pressure ・・80TOrr Next, Figure 1 B
As shown in FIG. 2, the tungsten film 13A and the titanium nitride film 12 are etched back.
このエッチバックにより、コンタクトホール１１ａ内の
タングステン膜１３Ａをオーバーエツチングし、層間絶
縁膜Ｉｌ上のタングステン膜＋３Ａ・及び窒化チタン膜
１２を確実に除去する。By this etchback, the tungsten film 13A in the contact hole 11a is overetched, and the tungsten film +3A and the titanium nitride film 12 on the interlayer insulating film Il are reliably removed.
なお、このエッチバックの条件は、以下に示す通りであ
る。Note that the conditions for this etchback are as shown below.
エツチングガス ・・・六フッ化イオウ（ＳＦ３）ガス
流量 ・・・４０５ＣＣＭ
圧力 ・Ｉ ＯｍＴ ｏ ｒ ｒマイクロ波
出力 ８５０Ｗ
ＲＦバイアス ・Ｉ ００Ｖ （２ＭＨｚ）次に、第
１図Ｃに示すように、タングステン膜１３Ａ上に選択タ
ングステン（以下タングステン膜と称する）１３ＢをＣ
ＶＤ法にて選択成長させる。Etching gas: Sulfur hexafluoride (SF3) Gas flow rate: 405CCM Pressure: I OmT or r Microwave output: 850W RF bias: I00V (2MHz) Next, as shown in Figure 1C, tungsten Selective tungsten (hereinafter referred to as tungsten film) 13B is deposited on the film 13A.
Selective growth is performed using the VD method.
このＣＶＤ条件は、以下に示す通りである。The CVD conditions are as shown below.
雰囲気ガス及びその流量
六フッ化タングステン（ＷＦｅ）・Ｉ Ｏ８ＣｒＭンラ
ン（Ｓ ｉ Ｈ４） −７、ＣＣＭ水素（Ｈ
２） ・・・１０００ｓ。、温度
・・・２６０８Ｃ圧力
−２００ｍ Ｔ ｏｒｒ上記したタングス
テン膜１３Ｂの選択成長は、コンタクトホールｌｌａの
開口縁に至る程度まで行なってコンタクトホールｌｌａ
を埋め込み、タングステンプラグ１３の形成が完了する
。Atmospheric gas and its flow rate Tungsten hexafluoride (WFe) IO8CrM (S i H4)
2) ...1000s. ,temperature
...2608C pressure
-200 m Torr The above-described selective growth of the tungsten film 13B is performed to the extent that it reaches the opening edge of the contact hole lla.
, and the formation of the tungsten plug 13 is completed.
次に、第１図りに示すように、アルミニウム配線１４を
スパッタ法等により形成すれば、上層配線が形成できる
。Next, as shown in the first diagram, an upper layer wiring can be formed by forming aluminum wiring 14 by sputtering or the like.
本実施例においては、コンタクトホール１ ］、 ａ内
にタングステンプラグ１３を段差を生ぜずに形成できる
ため、上層配線のカバレッジが良好となり、配線の信頼
性が向上する。In this embodiment, since the tungsten plug 13 can be formed in the contact hole 1], a without creating a step, the coverage of the upper layer wiring is improved and the reliability of the wiring is improved.
以上、実施例について説明したが、本発明は、これに限
られるものではなく、各種の設計変更が可能である。Although the embodiments have been described above, the present invention is not limited thereto, and various design changes are possible.
［発明の効果１
以−Ｌの説明から明らかなように、本発明に係るタング
ステンプラグの形成方法によれば、コンタクトホールな
どの配線用開口部においてタングステンプラグによる凹
部が形成されないため、上層配線のカバレッジを良好に
し、配線の信頼性を高める効果がある。[Effect of the Invention 1] As is clear from the explanation in L below, according to the method for forming a tungsten plug according to the present invention, no recess is formed by the tungsten plug in an opening for wiring such as a contact hole, so that the upper layer wiring is This has the effect of improving coverage and improving wiring reliability.
第１図Ａ〜第１図りは本発明に係るタングステンプラグ
の形成方法の実施例を示す断面図、第２図はアルミニウ
ムを用いた従来例の断面図、第３図Ａ〜第３図Ｃはタン
グステンを用いた従来例の断面図である。
１１ ・層間絶縁膜、ｌｌａ・コンタクトホール、１３
・タングステンプラグ、＋３Ａ、１３Ｂ・・タングス
テン膜、１４・・アルミニウム配線（上層配線）。
１１０コンタクト庁、−ル
丈３乞１夕１１の工）１Σ斤、１０Ｊｖ面 口第１図Ａ
（亨二 万ｔ １り１１）
第１図Ｂ
（支脆１ｙ１１）
第１図Ｃ
（笑止１夕１１）
第１図Ｄ
２０コンタクト汀＼−ル
アルミニウムΣ用いた４乏来うダ１０？面図第２図
２０コンタクト汀、−ル
第３図Ｃ1A to 1D are cross-sectional views showing an embodiment of the method for forming a tungsten plug according to the present invention, FIG. 2 is a cross-sectional view of a conventional example using aluminum, and FIGS. 3A to 3C are FIG. 2 is a cross-sectional view of a conventional example using tungsten. 11 ・Interlayer insulating film, lla・contact hole, 13
- Tungsten plug, +3A, 13B...Tungsten film, 14...Aluminum wiring (upper layer wiring). 110 Contact Agency, - Length 3 years 1 night 11 work) 1Σ cat, 10 Jv side Mouth Figure 1 A (Kyo 2 million tons 1ri 11) Figure 1 B (support 1y11) Figure 1 C (lol stop 1 E11) Fig. 1D 20 contacts using aluminum Σ4 less than 10? Top view Figure 2 20 Contact base Figure 3 C
Claims (1)
縁膜上及び前記配線用開口部内にタングステンをブラン
ケット成長させて該配線用開口部を密に埋め込む工程と
、 前記タングステンにエッチバックを施し前記配線用開口
部の開口縁よりも下方にタングステンが残留するように
オーバーエッチングする工程と、前記配線用開口部内の
タングステン上にさらにタングステンを選択成長させて
該配線用開口部を埋め込む工程を備えることを特徴とす
るタングステンプラグの形成方法。(1) forming a wiring opening in an insulating film; blanket-growing tungsten on the insulating film and in the wiring opening to densely fill the wiring opening; and etching back the tungsten. a step of over-etching so that tungsten remains below the opening edge of the wiring opening, and a step of selectively growing tungsten on the tungsten in the wiring opening to fill the wiring opening. A method for forming a tungsten plug, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26451890A JPH04142061A (en) | 1990-10-02 | 1990-10-02 | Formation of tungsten plug |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26451890A JPH04142061A (en) | 1990-10-02 | 1990-10-02 | Formation of tungsten plug |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04142061A true JPH04142061A (en) | 1992-05-15 |
Family
ID=17404365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26451890A Pending JPH04142061A (en) | 1990-10-02 | 1990-10-02 | Formation of tungsten plug |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04142061A (en) |
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5633201A (en) * | 1992-11-30 | 1997-05-27 | Hyundai Electronics Industries, Co., Ltd. | Method for forming tungsten plugs in contact holes of a semiconductor device |
| KR100321141B1 (en) * | 1994-12-30 | 2002-05-13 | 박종섭 | Method for fabricating semiconductor device |
| CN104272441A (en) * | 2012-03-27 | 2015-01-07 | 诺发系统公司 | Tungsten feature fill |
| US9748137B2 (en) | 2014-08-21 | 2017-08-29 | Lam Research Corporation | Method for void-free cobalt gap fill |
| US9754824B2 (en) | 2015-05-27 | 2017-09-05 | Lam Research Corporation | Tungsten films having low fluorine content |
| US9953984B2 (en) | 2015-02-11 | 2018-04-24 | Lam Research Corporation | Tungsten for wordline applications |
| US9972504B2 (en) | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
| US9978605B2 (en) | 2015-05-27 | 2018-05-22 | Lam Research Corporation | Method of forming low resistivity fluorine free tungsten film without nucleation |
| US9978610B2 (en) | 2015-08-21 | 2018-05-22 | Lam Research Corporation | Pulsing RF power in etch process to enhance tungsten gapfill performance |
| US9997405B2 (en) | 2014-09-30 | 2018-06-12 | Lam Research Corporation | Feature fill with nucleation inhibition |
| US10170320B2 (en) | 2015-05-18 | 2019-01-01 | Lam Research Corporation | Feature fill with multi-stage nucleation inhibition |
| US10211099B2 (en) | 2016-12-19 | 2019-02-19 | Lam Research Corporation | Chamber conditioning for remote plasma process |
| US10256142B2 (en) | 2009-08-04 | 2019-04-09 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| US10381266B2 (en) | 2012-03-27 | 2019-08-13 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| US10566211B2 (en) | 2016-08-30 | 2020-02-18 | Lam Research Corporation | Continuous and pulsed RF plasma for etching metals |
| US10573522B2 (en) | 2016-08-16 | 2020-02-25 | Lam Research Corporation | Method for preventing line bending during metal fill process |
| US11348795B2 (en) | 2017-08-14 | 2022-05-31 | Lam Research Corporation | Metal fill process for three-dimensional vertical NAND wordline |
| US11437269B2 (en) | 2012-03-27 | 2022-09-06 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| US11549175B2 (en) | 2018-05-03 | 2023-01-10 | Lam Research Corporation | Method of depositing tungsten and other metals in 3D NAND structures |
| US11972952B2 (en) | 2018-12-14 | 2024-04-30 | Lam Research Corporation | Atomic layer deposition on 3D NAND structures |
| US11978666B2 (en) | 2018-12-05 | 2024-05-07 | Lam Research Corporation | Void free low stress fill |
| US12002679B2 (en) | 2019-04-11 | 2024-06-04 | Lam Research Corporation | High step coverage tungsten deposition |
| US12077858B2 (en) | 2019-08-12 | 2024-09-03 | Lam Research Corporation | Tungsten deposition |
| US12237221B2 (en) | 2019-05-22 | 2025-02-25 | Lam Research Corporation | Nucleation-free tungsten deposition |
| US12261081B2 (en) | 2019-02-13 | 2025-03-25 | Lam Research Corporation | Tungsten feature fill with inhibition control |
-
1990
- 1990-10-02 JP JP26451890A patent/JPH04142061A/en active Pending
Cited By (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5633201A (en) * | 1992-11-30 | 1997-05-27 | Hyundai Electronics Industries, Co., Ltd. | Method for forming tungsten plugs in contact holes of a semiconductor device |
| KR100321141B1 (en) * | 1994-12-30 | 2002-05-13 | 박종섭 | Method for fabricating semiconductor device |
| US11410883B2 (en) | 2009-08-04 | 2022-08-09 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| US10103058B2 (en) | 2009-08-04 | 2018-10-16 | Novellus Systems, Inc. | Tungsten feature fill |
| US9653353B2 (en) | 2009-08-04 | 2017-05-16 | Novellus Systems, Inc. | Tungsten feature fill |
| US10256142B2 (en) | 2009-08-04 | 2019-04-09 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| US11075115B2 (en) | 2009-08-04 | 2021-07-27 | Novellus Systems, Inc. | Tungsten feature fill |
| KR20200006620A (en) * | 2012-03-27 | 2020-01-20 | 노벨러스 시스템즈, 인코포레이티드 | Tungsten feature fill |
| US11437269B2 (en) | 2012-03-27 | 2022-09-06 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| JP2015512568A (en) * | 2012-03-27 | 2015-04-27 | ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ | Feature filling with tungsten |
| CN104272441A (en) * | 2012-03-27 | 2015-01-07 | 诺发系统公司 | Tungsten feature fill |
| CN113862634A (en) * | 2012-03-27 | 2021-12-31 | 诺发系统公司 | Tungsten feature fill |
| US10381266B2 (en) | 2012-03-27 | 2019-08-13 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| US9748137B2 (en) | 2014-08-21 | 2017-08-29 | Lam Research Corporation | Method for void-free cobalt gap fill |
| US9997405B2 (en) | 2014-09-30 | 2018-06-12 | Lam Research Corporation | Feature fill with nucleation inhibition |
| US10580695B2 (en) | 2014-09-30 | 2020-03-03 | Lam Research Corporation | Feature fill with nucleation inhibition |
| US11901227B2 (en) | 2014-09-30 | 2024-02-13 | Lam Research Corporation | Feature fill with nucleation inhibition |
| US10529722B2 (en) | 2015-02-11 | 2020-01-07 | Lam Research Corporation | Tungsten for wordline applications |
| US9953984B2 (en) | 2015-02-11 | 2018-04-24 | Lam Research Corporation | Tungsten for wordline applications |
| US10170320B2 (en) | 2015-05-18 | 2019-01-01 | Lam Research Corporation | Feature fill with multi-stage nucleation inhibition |
| US10580654B2 (en) | 2015-05-18 | 2020-03-03 | Lam Research Corporation | Feature fill with multi-stage nucleation inhibition |
| US10916434B2 (en) | 2015-05-18 | 2021-02-09 | Lam Research Corporation | Feature fill with multi-stage nucleation inhibition |
| US9978605B2 (en) | 2015-05-27 | 2018-05-22 | Lam Research Corporation | Method of forming low resistivity fluorine free tungsten film without nucleation |
| US10546751B2 (en) | 2015-05-27 | 2020-01-28 | Lam Research Corporation | Forming low resistivity fluorine free tungsten film without nucleation |
| US9754824B2 (en) | 2015-05-27 | 2017-09-05 | Lam Research Corporation | Tungsten films having low fluorine content |
| US9972504B2 (en) | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
| US11069535B2 (en) | 2015-08-07 | 2021-07-20 | Lam Research Corporation | Atomic layer etch of tungsten for enhanced tungsten deposition fill |
| US9978610B2 (en) | 2015-08-21 | 2018-05-22 | Lam Research Corporation | Pulsing RF power in etch process to enhance tungsten gapfill performance |
| US10395944B2 (en) | 2015-08-21 | 2019-08-27 | Lam Research Corporation | Pulsing RF power in etch process to enhance tungsten gapfill performance |
| US10573522B2 (en) | 2016-08-16 | 2020-02-25 | Lam Research Corporation | Method for preventing line bending during metal fill process |
| US12362188B2 (en) | 2016-08-16 | 2025-07-15 | Lam Research Corporation | Method for preventing line bending during metal fill process |
| US11355345B2 (en) | 2016-08-16 | 2022-06-07 | Lam Research Corporation | Method for preventing line bending during metal fill process |
| US10566211B2 (en) | 2016-08-30 | 2020-02-18 | Lam Research Corporation | Continuous and pulsed RF plasma for etching metals |
| US10211099B2 (en) | 2016-12-19 | 2019-02-19 | Lam Research Corporation | Chamber conditioning for remote plasma process |
| US11348795B2 (en) | 2017-08-14 | 2022-05-31 | Lam Research Corporation | Metal fill process for three-dimensional vertical NAND wordline |
| US11549175B2 (en) | 2018-05-03 | 2023-01-10 | Lam Research Corporation | Method of depositing tungsten and other metals in 3D NAND structures |
| US11978666B2 (en) | 2018-12-05 | 2024-05-07 | Lam Research Corporation | Void free low stress fill |
| US11972952B2 (en) | 2018-12-14 | 2024-04-30 | Lam Research Corporation | Atomic layer deposition on 3D NAND structures |
| US12261081B2 (en) | 2019-02-13 | 2025-03-25 | Lam Research Corporation | Tungsten feature fill with inhibition control |
| US12002679B2 (en) | 2019-04-11 | 2024-06-04 | Lam Research Corporation | High step coverage tungsten deposition |
| US12237221B2 (en) | 2019-05-22 | 2025-02-25 | Lam Research Corporation | Nucleation-free tungsten deposition |
| US12077858B2 (en) | 2019-08-12 | 2024-09-03 | Lam Research Corporation | Tungsten deposition |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH04142061A (en) | Formation of tungsten plug | |
| JP2889430B2 (en) | Contact part forming method | |
| JPH04293233A (en) | Forming method of metal plug | |
| JP3027946B2 (en) | Semiconductor device and manufacturing method thereof | |
| JPH04307934A (en) | Forming method of tungsten plug | |
| JP2616402B2 (en) | Method for manufacturing semiconductor device | |
| JP2733396B2 (en) | Method for manufacturing semiconductor device | |
| JPH05291408A (en) | Semiconductor device and manufacturing method thereof | |
| JP2543192B2 (en) | Semiconductor device and manufacturing method thereof | |
| JPH053170A (en) | Forming method of blanket tungsten plug | |
| JPS62243325A (en) | Manufacture of semiconductor integrated circuit | |
| JPH05315334A (en) | Manufacture of semiconductor device | |
| JPH01214137A (en) | Manufacture of integrated circuit | |
| JPH05152449A (en) | Manufacture of semiconductor device | |
| JPH0562929A (en) | Manufacturing method of semiconductor device | |
| JP2706388B2 (en) | Method for manufacturing semiconductor device | |
| JP3082230B2 (en) | Wiring formation method | |
| JP2911171B2 (en) | Method for forming contact plug of semiconductor device | |
| JPH07111263A (en) | W plug formation method | |
| JPH06268077A (en) | Method for manufacturing semiconductor device | |
| JPH07153841A (en) | Semiconductor device and its manufacture | |
| JPH04142062A (en) | Formation of tungsten plug | |
| JPH05308056A (en) | Manufacture of semiconductor device | |
| JPH0629240A (en) | Semiconductor device and manufacturing method thereof | |
| JPH0380533A (en) | Manufacturing method of semiconductor device |